CN113539815A - Semiconductor plate groove etching method - Google Patents
Semiconductor plate groove etching method Download PDFInfo
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- CN113539815A CN113539815A CN202110821564.1A CN202110821564A CN113539815A CN 113539815 A CN113539815 A CN 113539815A CN 202110821564 A CN202110821564 A CN 202110821564A CN 113539815 A CN113539815 A CN 113539815A
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- cleaning
- chuck
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- 238000005530 etching Methods 0.000 title claims abstract description 84
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 238000004140 cleaning Methods 0.000 claims abstract description 31
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 26
- 239000000853 adhesive Substances 0.000 claims abstract description 8
- 230000001070 adhesive effect Effects 0.000 claims abstract description 8
- 238000005192 partition Methods 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 8
- 230000001360 synchronised effect Effects 0.000 claims description 7
- 238000001035 drying Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000009413 insulation Methods 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a semiconductor plate groove etching method, which relates to the technical field of semiconductor processing and comprises the following steps: covering the surface of the non-etching area with photoresist to obtain a processed plate; step two: mounting the processed plate to a plate chuck in an etching device, and descending the processed plate to an etching groove for etching processing; step three: obtaining an etching plate after etching, moving the etching plate into a cleaning groove, and cleaning; step four: and after the cleaning processing is finished, obtaining a finished plate, cleaning the surface of the finished plate, and airing. According to the invention, the groove of the semiconductor plate is processed through an etching process, so that the processing quality of the groove of the plate can be improved, and the non-etching area of the plate is connected with the photoresist by adopting the adhesive, so that the bonding quality of the photoresist and the plate can be improved.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to a method for etching a groove of a semiconductor plate.
Background
The semiconductor refers to a material with electric conductivity between a conductor and an insulator at normal temperature, a semiconductor plate is one of common components in semiconductor processing and mainly used as a base material of the semiconductor material, and when the semiconductor plate is processed, a groove is sometimes required to be processed on the surface of the semiconductor plate so as to meet some performance or appearance requirements.
Through search, the Chinese patent discloses a printed circuit board and a processing technology thereof (publication number: CN111477604A), and the specific processing technology steps of the patent are as follows: the method comprises the following steps: mechanically polishing a silicon wafer substrate prepared in advance, and manually polishing the hidden part of the side corner; step two: putting the silicon wafer substrate ground and trimmed in the step into an ultrasonic cleaning machine, adding clear water and a sodium hydroxide solution, and rapidly cleaning by using ultrasonic waves; step three: etching an insulation groove on one side of the silicon wafer, filling a first insulation layer in the insulation groove, and filling a conducting layer contacted with the P-type substrate on the outer side of the first insulation layer; step four: implanting large-area ions into the P-type layer corresponding to the groove region of the device and the N-type layer corresponding to the source region on the surface of the silicon wafer on the basis of the third step; step five: the plate image was copied on silicon wafer with carbon paper.
When a groove of an existing semiconductor plate is machined, machining steps are single, machining quality of the groove is poor, and after the groove of the plate is machined, etching liquid is prone to remaining in the groove, and the groove is prone to being over-etched.
Disclosure of Invention
The invention aims to provide a semiconductor plate groove etching method, which solves the following technical problems:
(1) the existing plate has single etching step, and the processing quality of an etching groove on the surface of the plate is poor;
(2) the existing etching device is single in structure, so that the processing quality is low, the processing quality is poor, and meanwhile, after etching is completed, etching liquid is easily remained in the groove of the plate, so that the groove is easily etched excessively.
The purpose of the invention can be realized by the following technical scheme:
a semiconductor plate groove etching method comprises the following steps:
the method comprises the following steps: dividing the surface of the plate into a to-be-etched area and a non-etched area, and covering the surface of the non-etched area with photoresist to obtain a processed plate;
step two: installing a processed plate into a plate chuck in an etching device, starting a first air cylinder, and descending the first air cylinder into an etching groove for etching;
step three: after the etching processing is finished, obtaining an etching plate, moving the etching plate into a cleaning groove, and cleaning;
step four: and after the cleaning processing is finished, obtaining a finished plate, taking the cost plate out of the plate chuck, cleaning the surface of the finished plate, and finally drying the finished plate.
As a further scheme of the invention: the method for covering the photoresist in the first step comprises the following steps:
a1: coating the photoresist on the edge of the area to be etched of the plate in a linear manner;
a2: after the photoresist in the A1 is solidified, smearing adhesive on the non-etching area of the plate;
a3: and covering the residual photoresist on the surface of the non-etching area.
As a further scheme of the invention: the diameter of the linear photoresist in the step A1 is 1.5-2.5 mm.
As a further scheme of the invention: the cleaning procedure in the fourth step comprises removing the photoresist and the adhesive on the surface of the non-etching area.
As a further scheme of the invention: and the temperature in the second step of etching processing is 22-27 ℃.
As a further scheme of the invention: this etching device is including processing the case, the processing storehouse has been seted up to the inside of processing the case, the internally mounted in processing storehouse has a movable partition, the movable partition will process the inside sculpture groove and the washing tank of dividing into in the storehouse, the processing incasement portion is close to the first cylinder of upside fixedly connected with a plurality of in processing storehouse, a plurality of the output of first cylinder is down and fixedly connected with apron, the side-mounting of apron has lifting support, lifting support's internally mounted has a plurality of to be used for the plate chuck of centre gripping plate.
As a further scheme of the invention: the processing case outside just is close to the both sides in processing storehouse fixedly connected with fan and outlet duct respectively for the inside circulation of air in control processing storehouse.
As a further scheme of the invention: the movable partition plate comprises a fixing plate fixedly connected with the processing bin, an electric push rod is fixedly connected to the inside of the fixing plate, and the output end of the electric push rod faces upwards and is fixedly connected with a sliding plate.
As a further scheme of the invention: the lifting support comprises a sliding plate and a driving motor, the sliding plate is attached to the upper side of the cover plate, the driving motor is arranged on the upper side of the sliding plate, a driving sliding pipe is fixedly connected to the lower surface of the driving motor, the driving sliding pipe extends to the lower side of the cover plate, a driven sliding pipe is arranged on one side of the driving sliding pipe, a fixing frame is fixedly connected between the driving sliding pipe and the driven sliding pipe, a second cylinder is fixedly connected to the side surfaces of the driving sliding pipe and the driven sliding pipe, the second cylinder is fixedly connected with the cover plate, a synchronous belt is connected to the output end of the driving motor in a meshed mode, and the synchronous belt extends to the inside of the driving sliding pipe.
As a further scheme of the invention: a movable gap is arranged between the top of the driven sliding pipe and the lower surface of the cover plate, and the length of the movable gap is larger than the length of the working distance of the two groups of second cylinders, so that the driven sliding pipe is prevented from influencing the movement of the second cylinders.
As a further scheme of the invention: and a horizontal third cylinder is fixedly connected between the side surface of the sliding plate and the cover plate and is used for controlling the movement of the lifting support.
As a further scheme of the invention: the plate chuck comprises a driving disc and a driven disc, a driving shaft is fixedly connected to the side face of the driving disc, one end of the driving shaft penetrates through the fixing frame and extends to the inside of the driving sliding pipe, and one end of the driving shaft is meshed with the synchronous belt.
As a further scheme of the invention: the spring column is rotatably connected between the side face of the driven disc and the fixing frame and consists of two cylinder components in sliding connection, and a reset spring is fixedly connected between the two cylinder components, so that the movement of the driven disc is controlled, and a user can conveniently install plates.
As a further scheme of the invention: the use method of the etching device comprises the following steps:
s1: installing a plate in a plate chuck, starting a first air cylinder, covering a cover plate on the upper side of a processing bin, embedding the plate chuck into etching liquid in an etching groove, and performing etching processing;
s2: after the etching processing is finished, starting the second air cylinder, lifting the plate chuck from the etching groove, starting the third air cylinder, moving the plate chuck to the cleaning groove by crossing the movable partition plate, starting the second air cylinder again, and descending the plate chuck to the cleaning liquid in the cleaning groove;
s3: starting an electric push rod in the movable partition plate to lift the sliding plate;
s4: starting a driving motor, driving a plate chuck to rotate through a synchronous belt, and cleaning the plate inside the plate chuck.
As a further scheme of the invention: in the step S4, the rotating speed of the plate chuck is 70-85 r/min.
The invention has the beneficial effects that:
the groove of the semiconductor plate is processed through an etching process, so that the processing quality of the groove of the semiconductor plate can be improved, in the groove processing, the non-etching area of the plate is connected with the photoresist through the adhesive, so that the adhesion quality of the photoresist and the plate can be realized, and before the photoresist is covered, the finer photoresist line body is arranged on the boundary of different areas of the plate, so that the etching fineness of the groove can be improved;
on the other hand, the present case passes through the etching device, can improve automation and mechanization that the plate adds man-hour, through the plate chuck, can make things convenient for during staff assembles the device into with the plate, simultaneously through lifting support and its inside third cylinder, can drive the plate and remove in the sculpture groove washing tank, and still be provided with hold-in range driven revolution mechanic among the lifting support, be used for driving the rotation when the plate washs, thereby can improve cleaning quality, furthermore, still be provided with movable partition in the processing storehouse, can rise when rotatory washing, thereby can prevent the problem that the splash splashes when rotatory.
Drawings
The invention will be further described with reference to the accompanying drawings.
FIG. 1 is a perspective view of an etching apparatus according to the present invention;
FIG. 2 is a cross-sectional view of a processing cartridge of the present invention;
fig. 3 is a sectional view of the elevating bracket and the plate chuck in the present invention;
fig. 4 is an enlarged view of a portion a of fig. 1 according to the present invention.
In the figure: 1. a processing box; 2. a processing bin; 3. etching a groove; 4. a cleaning tank; 5. a movable partition plate; 6. a first cylinder; 7. a cover plate; 8. an air outlet pipe; 9. a lifting support; 10. a fixed mount; 11. a plate chuck; 12. a fan; 51. a fixing plate; 52. an electric push rod; 53. a slide plate; 91. a drive motor; 92. a actively sliding tube; 93. a driven sliding tube; 94. a second cylinder; 95. a synchronous belt; 96. a sliding plate; 97. a third cylinder; 111. a drive disc; 112. a drive shaft; 113. a driven plate; 114. a spring post.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-4, the present invention is a method for etching a trench in a semiconductor device, comprising the following steps:
the method comprises the following steps: dividing the surface of the plate into a to-be-etched area and a non-etched area, covering photoresist on the surface of the non-etched area, smearing the photoresist on the edge of the to-be-etched area of the plate in a linear manner with the diameter of 1.5mm, smearing an adhesive on the non-etched area of the plate after the smeared photoresist is solidified, and covering the residual photoresist on the surface of the non-etched area to obtain a processed plate;
step two: mounting a processed plate into a plate chuck 11 in an etching device, starting a first air cylinder 6, and lowering the first air cylinder into an etching groove 3 for etching, wherein the temperature during etching is 25 ℃;
step three: after the etching processing is finished, obtaining an etching plate, moving the etching plate into the cleaning groove 4, and cleaning;
step four: and after the cleaning processing is finished, obtaining a finished plate, taking the finished plate out of the plate chuck 11, removing the photoresist and the adhesive on the surface of the non-etching area on the surface of the finished plate, and finally drying the finished plate.
This etching device is including processing case 1, processing storehouse 2 has been seted up to the inside of processing case 1, the internally mounted of processing storehouse 2 has a movable partition plate 5, movable partition plate 5 will process 2 inside divisions in storehouse and carve groove 3 and washing tank 4, the inside upside fixedly connected with a plurality of first cylinder 6 that is close to processing storehouse 2 of processing case, the output of the first cylinder 6 of a plurality of is down and fixedly connected with apron 7, the side-mounting of apron 7 has lifting support 9, the internally mounted of lifting support 9 has a plurality of plate chuck 11 that is used for centre gripping plate.
The two sides of the outer side of the processing box 1 and close to the processing bin 2 are respectively and fixedly connected with a fan 12 and an air outlet pipe 8 for controlling the air circulation inside the processing bin 2.
The movable partition board 5 comprises a fixing board 51 fixedly connected with the processing bin 2, an electric push rod 52 is fixedly connected inside the fixing board 51, and the output end of the electric push rod 52 faces upwards and is fixedly connected with a sliding plate 53.
Lifting support 9 is including the laminating at the sliding plate 96 of apron 7 upside and the driving motor 91 of setting at sliding plate 96 upside, driving motor 91's lower fixed surface is connected with initiative sliding tube 92, initiative sliding tube 92 extends to the downside of apron 7, one side of initiative sliding tube 92 is provided with driven sliding tube 93, and fixedly connected with mount 10 between initiative sliding tube 92 and the driven sliding tube 93, the equal fixedly connected with second cylinder 94 in side of initiative sliding tube 92 and driven sliding tube 93, two sets of second cylinders 94 all with apron 7 fixed connection, driving motor 91's output meshing is connected with hold-in range 95, hold-in range 95 extends to the inside of initiative sliding tube 92.
A movable gap is arranged between the top of the driven sliding pipe 93 and the lower surface of the cover plate 7, and the length of the movable gap is larger than the length of the working distance of the two groups of second air cylinders 94, so that the driven sliding pipe 93 is prevented from influencing the movement of the second air cylinders 94.
A horizontal third cylinder 97 is fixedly connected between the side surface of the sliding plate 96 and the cover plate 7, and the third cylinder 97 is used for controlling the movement of the lifting bracket 9.
The plate chuck 11 includes a driving disc 111 and a driven disc 113, a driving shaft 112 is fixedly connected to a side surface of the driving disc 111, one end of the driving shaft 112 penetrates through the fixing frame 10 and extends to the inside of the driving sliding pipe 92, and one end of the driving shaft 112 is engaged with the timing belt 95.
A spring column 114 is rotatably connected between the side surface of the driven plate 113 and the fixed frame 10, the spring column 114 is composed of two column members which are connected in a sliding manner, and a return spring is fixedly connected between the two column members, so that the movement of the driven plate 113 is controlled, and a user can conveniently install plates.
The working principle of the invention is as follows:
installing a plate in a plate chuck 11, driving a driven plate 113 to move through a return spring in a spring column 114 during installation, placing the plate between a driving plate 111 and the driven plate 113, clamping the plate, starting a first air cylinder 6, covering a cover plate 7 on the upper side of a processing bin 2, embedding the plate chuck 11 into etching liquid in an etching groove 3, performing etching processing, and starting a fan 12 to circulate air in the processing bin 2 during processing;
after the etching processing is finished, starting the second air cylinder 94, lifting the plate chuck 11 from the etching groove 3, starting the third air cylinder 97, moving the plate chuck 11 to the cleaning groove 4 by crossing the movable partition plate 5, starting the second air cylinder 94 again, and descending the plate chuck 11 to the cleaning liquid in the cleaning groove 4;
starting an electric push rod 52 in the movable partition plate 5, lifting a sliding plate 53, and shielding the etching tank 3 and the cleaning tank 4;
the driving motor 91 is started, the driving shaft 112 in the plate chuck 11 is driven to rotate through the synchronous belt 95, so that the driving disc 111 and the driven disc 113 are driven to rotate, the rotating speed is 75r/min, and plates in the plate chuck 11 are cleaned.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "left", "right", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are only for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation and a specific orientation configuration and operation, and thus, should not be construed as limiting the present invention. Furthermore, "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and the like are to be construed broadly and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be directly connected or indirectly connected through an intermediate member, or they may be connected through two or more elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
While one embodiment of the present invention has been described in detail, the description is only a preferred embodiment of the present invention and should not be taken as limiting the scope of the invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.
Claims (7)
1. A method for etching a groove of a semiconductor plate is characterized by comprising the following steps:
the method comprises the following steps: dividing the surface of the plate into a to-be-etched area and a non-etched area, and covering the surface of the non-etched area with photoresist to obtain a processed plate;
step two: installing the processed plate into a plate chuck (11) in an etching device, starting a first air cylinder (6), and descending the first air cylinder into an etching groove (3) for etching;
step three: after the etching processing is finished, obtaining an etching plate, moving the etching plate into a cleaning groove (4), and cleaning;
step four: and after the cleaning processing is finished, obtaining a finished plate, taking the finished plate out of the plate chuck (11), cleaning the surface of the finished plate, and finally drying the finished plate.
2. The method for etching the groove on the semiconductor plate according to claim 1, wherein the method for covering the photoresist in the first step comprises the following steps:
a1: coating the photoresist on the edge of the area to be etched of the plate in a linear manner;
a2: after the photoresist in the A1 is solidified, smearing adhesive on the non-etching area of the plate;
a3: and covering the residual photoresist on the surface of the non-etching area.
3. The method for etching the groove in the semiconductor plate according to claim 2, wherein the diameter of the linear photoresist in the step A1 is 1.5-2.5 mm.
4. The method for etching the groove on the semiconductor plate according to claim 3, wherein the cleaning process in the fourth step comprises removing the photoresist and the adhesive on the surface of the non-etching area.
5. The method for etching the groove in the semiconductor plate according to claim 1, wherein the temperature during the etching process in the second step is 22-27 ℃.
6. The method for etching the groove on the semiconductor plate according to claim 1, wherein the use method of the etching device comprises the following steps:
s1: installing a plate in a plate chuck (11), starting a first air cylinder (6), covering a cover plate (7) on the upper side of a processing bin (2), embedding the plate chuck (11) into etching liquid in an etching groove (3), and performing etching processing;
s2: after the etching processing is finished, starting a second air cylinder (94), lifting a plate chuck (11) from an etching groove (3), starting a third air cylinder (97), moving the plate chuck (11) to a cleaning groove (4) by crossing a movable partition plate (5), starting the second air cylinder (94) again, and descending the plate chuck (11) to cleaning liquid in the cleaning groove (4);
s3: starting an electric push rod (52) in the movable partition plate (5) to lift the sliding plate (53);
s4: the driving motor (91) is started, the plate chuck (11) is driven to rotate through the synchronous belt (95), and plates inside the plate chuck (11) are cleaned.
7. The semiconductor plate groove etching method as claimed in claim 6, wherein in the step S4, the rotation speed of the plate chuck (11) is 70-85 r/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110821564.1A CN113539815B (en) | 2021-07-20 | 2021-07-20 | Semiconductor plate groove etching method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110821564.1A CN113539815B (en) | 2021-07-20 | 2021-07-20 | Semiconductor plate groove etching method |
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| CN113539815A true CN113539815A (en) | 2021-10-22 |
| CN113539815B CN113539815B (en) | 2023-12-15 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0714809A (en) * | 1993-06-22 | 1995-01-17 | Hitachi Ltd | Wafer cleaning device and method |
| JPH08264407A (en) * | 1995-03-20 | 1996-10-11 | Sony Corp | Pattern forming method |
| JP2000243807A (en) * | 1999-02-19 | 2000-09-08 | Dainippon Screen Mfg Co Ltd | Substrate processing device |
| JP2001196342A (en) * | 2000-01-13 | 2001-07-19 | Dainippon Screen Mfg Co Ltd | Substrate dipping equipment |
| JP2013045964A (en) * | 2011-08-25 | 2013-03-04 | Sharp Corp | Immersion processing method of substrate to be processed and immersion processing device |
| JP2017011212A (en) * | 2015-06-25 | 2017-01-12 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing method and apparatus |
-
2021
- 2021-07-20 CN CN202110821564.1A patent/CN113539815B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0714809A (en) * | 1993-06-22 | 1995-01-17 | Hitachi Ltd | Wafer cleaning device and method |
| JPH08264407A (en) * | 1995-03-20 | 1996-10-11 | Sony Corp | Pattern forming method |
| JP2000243807A (en) * | 1999-02-19 | 2000-09-08 | Dainippon Screen Mfg Co Ltd | Substrate processing device |
| JP2001196342A (en) * | 2000-01-13 | 2001-07-19 | Dainippon Screen Mfg Co Ltd | Substrate dipping equipment |
| JP2013045964A (en) * | 2011-08-25 | 2013-03-04 | Sharp Corp | Immersion processing method of substrate to be processed and immersion processing device |
| JP2017011212A (en) * | 2015-06-25 | 2017-01-12 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing method and apparatus |
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| Publication number | Publication date |
|---|---|
| CN113539815B (en) | 2023-12-15 |
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