JP5952007B2 - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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JP5952007B2
JP5952007B2 JP2012014887A JP2012014887A JP5952007B2 JP 5952007 B2 JP5952007 B2 JP 5952007B2 JP 2012014887 A JP2012014887 A JP 2012014887A JP 2012014887 A JP2012014887 A JP 2012014887A JP 5952007 B2 JP5952007 B2 JP 5952007B2
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substrate
processing
liquid
tank
width
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JP2013157368A (en
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友明 相原
友明 相原
一郎 光吉
一郎 光吉
前川 直嗣
直嗣 前川
慶一 土谷
慶一 土谷
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Screen Holdings Co Ltd
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Screen Holdings Co Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • H10P72/0406Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • H10P72/0406Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0416Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7602Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a robot blade or gripped by a gripper for conveyance

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Description

本発明は、円板状の基板を処理する技術に関する。   The present invention relates to a technique for processing a disk-shaped substrate.

従来より、純水や薬液等の処理液を用いて基板を処理する基板処理装置が用いられており、例えば、特許文献1の基板処理装置では、互いに平行に並んだ直立状態の複数の基板が処理槽内に配置され、複数の基板に対して処理液による処理が一括して行われる。このとき、特許文献1の装置では、基板の主面に沿う水平な幅方向の両側から基板を挟んで支持する一対の支持部材(ハンドリング部)から、直立状態の基板を下方から支持する爪部(支持部)へと基板が移載され、爪部が処理槽の上方から下降することにより、処理槽内に貯溜された処理液中に基板が浸漬される。   Conventionally, a substrate processing apparatus for processing a substrate using a processing liquid such as pure water or a chemical solution has been used. For example, in the substrate processing apparatus of Patent Document 1, a plurality of upright substrates arranged in parallel to each other are used. It arrange | positions in a processing tank and the process by a process liquid is collectively performed with respect to a several board | substrate. At this time, in the apparatus of Patent Document 1, a pair of support members (handling units) that support the substrate from both sides in the horizontal width direction along the main surface of the substrate and support the upright substrate from below. The substrate is transferred to the (support portion), and the claw portion is lowered from above the treatment tank, so that the substrate is immersed in the treatment liquid stored in the treatment tank.

特開2001−135710号公報JP 2001-135710 A

ところで、特許文献1のように爪部上に載置された基板が処理液外から処理液内に進入する場合には、爪部に付着する不要物(例えば、基板の載置時等に爪部と基板とが擦れ合うことにより発生した微小な不要物)により、基板の主面上に上下方向に伸びるスジ状の汚れが発生することがある。一対の支持部材により、基板を処理槽の底部近傍まで搬送して基板を処理液中に浸漬することも考えられるが、この場合、底部近傍において一対の支持部材による基板の解放が可能なように、処理槽の幅を大きくする必要があり、処理液の消費量が増大してしまう。   By the way, when the substrate placed on the claw portion enters the processing liquid from outside the processing liquid as in Patent Document 1, an unnecessary object adhering to the claw portion (for example, when the substrate is placed, etc.) (Small unnecessary matter generated by rubbing the part and the substrate) may cause streak-like dirt extending in the vertical direction on the main surface of the substrate. Although it is conceivable that the substrate is transported to the vicinity of the bottom of the processing tank by the pair of support members and the substrate is immersed in the processing liquid, in this case, the substrate can be released by the pair of support members in the vicinity of the bottom. Therefore, it is necessary to increase the width of the treatment tank, and the consumption of the treatment liquid increases.

本発明は上記課題に鑑みなされたものであり、基板上に上記スジ状の汚れが発生することを防止するとともに、処理液の消費量を削減することを目的としている。   The present invention has been made in view of the above problems, and an object thereof is to prevent the occurrence of the streak-like stains on the substrate and reduce the consumption of the processing liquid.

請求項1に記載の発明は、板状の基板を処理する基板処理装置であって、処理液が貯溜される処理槽と、前記処理槽内にて直立状態の基板を下方から支持する爪部を有し、前記爪部が前記処理槽の底部近傍に配置される液処理位置と、前記爪部が前記処理槽の上部近傍に配置される受渡位置との間で前記基板を昇降する昇降部と、直立状態の基板の主面に沿う水平な幅方向の間隔が変更可能な一対の支持部材により、前記基板を支持するとともに、前記処理槽の上方である搬送位置と前記受渡位置との間で前記基板を昇降する移載部と、前記移載部により前記搬送位置から前記受渡位置へと基板を搬送して、前記処理液中に位置する前記爪部上に前記基板を載置する制御部とを備え、前記液処理位置に配置された基板の上下方向における中央位置から下側において、前記幅方向における前記処理槽の内側面間距離が、前記移載部の両支持部材の幅の和を前記基板の幅に足した値である支持部材−基板合計幅よりも小さく、前記処理槽の前記上部の前記内側面間距離が、前記一対の支持部材による基板の支持および解放が可能な幅であるThe invention according to claim 1 is a substrate processing apparatus for processing a plate-shaped substrate, wherein a processing tank in which processing liquid is stored, and a claw portion that supports the substrate in an upright state in the processing tank from below. A lifting / lowering unit that raises and lowers the substrate between a liquid processing position in which the claw part is disposed in the vicinity of the bottom of the processing tank and a delivery position in which the claw part is disposed in the vicinity of the upper part of the processing tank. And a pair of support members capable of changing the horizontal width direction along the main surface of the substrate in an upright state, while supporting the substrate, and between the transfer position and the delivery position above the processing tank And a transfer unit that lifts and lowers the substrate, and a control unit that transfers the substrate from the transfer position to the delivery position by the transfer unit, and places the substrate on the claw portion located in the processing liquid. and a section, center the that put in the vertical direction of the substrate disposed in the liquid processing position In downward from location, the inner surface distance between the processing bath in the width direction, the support member the sum of the widths of both support members which is a value obtained by adding the width of the substrate of the transfer portion - than the substrate total width even rather small, the inner surface distance between the top of the processing tank, is possible width support and release of the substrate by the pair of support members.

請求項に記載の発明は、請求項1に記載の基板処理装置であって、互いに平行に並んだ直立状態の複数の基板が前記爪部により支持され、前記処理槽が、前記液処理位置に配置された前記複数の基板の前記上下方向における中央位置において前記複数の基板の外縁部を支持するガイドを有する。 Invention of claim 2, a substrate processing apparatus according to claim 1, being supported by the claw portion a plurality of substrates of upright aligned in parallel to each other, wherein the processing tank, the liquid processing position And a guide for supporting outer edge portions of the plurality of substrates at a central position in the up-down direction of the plurality of substrates arranged in the vertical direction.

請求項に記載の発明は、請求項1または2に記載の基板処理装置であって、内部に前記処理槽が配置され、上部に開閉可能な開口を有するチャンバと、前記処理槽内の前記処理液が排出された状態にて、前記受渡位置に配置された基板に向けて処理ガスを噴出するガス噴出部とをさらに備え、前記搬送位置が前記チャンバの上方であり、前記上下方向における前記液処理位置と前記受渡位置との間の距離が、基板の幅よりも小さい。 According to a third aspect of the invention, a substrate processing apparatus according to claim 1 or 2, wherein the processing tank is disposed within a chamber having a closable opening at the top, the said processing bath A gas ejection part for ejecting a processing gas toward the substrate disposed at the delivery position in a state where the processing liquid is discharged, the transfer position being above the chamber, and the vertical direction The distance between the liquid processing position and the delivery position is smaller than the width of the substrate.

請求項に記載の発明は、基板処理装置において板状の基板を処理する基板処理方法であって、前記基板処理装置が、処理槽と、前記処理槽内にて直立状態の基板を下方から支持する爪部を有し、前記爪部が前記処理槽の底部近傍に配置される液処理位置と、前記爪部が前記処理槽の上部近傍に配置される受渡位置との間で前記基板を昇降する昇降部と、直立状態の基板の主面に沿う水平な幅方向の間隔が変更可能な一対の支持部材により、前記基板を支持するとともに、前記処理槽の上方である搬送位置と前記受渡位置との間で前記基板を昇降する移載部とを備え、前記液処理位置に配置された基板の上下方向における中央位置から下側において、前記幅方向における前記処理槽の内側面間距離が、前記移載部の両支持部材の幅の和を前記基板の幅に足した値である支持部材−基板合計幅よりも小さく、前記処理槽の前記上部の前記内側面間距離が、前記一対の支持部材による基板の支持および解放が可能な幅であり、前記基板処理方法が、a)前記処理槽内に処理液を貯溜する工程と、b)前記移載部により前記搬送位置から前記受渡位置へと基板を搬送して、前記処理液中に位置する前記爪部上に前記基板を載置する工程とを備える。 According to a fourth aspect of the present invention, there is provided a substrate processing method for processing a plate-like substrate in a substrate processing apparatus, wherein the substrate processing apparatus applies a processing tank and an upright substrate in the processing tank from below. A claw portion for supporting the substrate between a liquid processing position where the claw portion is disposed near the bottom of the processing tank and a delivery position where the claw portion is disposed near the upper portion of the processing tank. The substrate is supported by a lifting unit that moves up and down and a pair of support members that can change the horizontal width direction along the main surface of the substrate in an upright state, and the transfer position and the delivery that are above the processing tank and a transfer unit for lifting the substrate between a position, in the lower from the central position among that put in the vertical direction of the substrate disposed the liquid processing position, the inner surface of the processing tank in the width direction The distance between the above is the sum of the widths of the two support members of the transfer section. The support member is a value obtained by adding the width of the plate - smaller than the substrate total width, the inter inner surface distance of the top of the processing tank, be a pair of supporting the support and release is possible width of the substrate by the members The substrate processing method includes: a) storing the processing liquid in the processing tank; b) transferring the substrate from the transfer position to the delivery position by the transfer unit; And placing the substrate on the claw portion.

本発明によれば、基板が載置された爪部が処理液外から処理液内に進入する場合に基板上に発生するスジ状の汚れを防止することができる。また、移載部を過度に処理液中に浸けることなく基板を爪部上に載置するとともに、処理槽の小型化により処理液の消費量を削減することもできる。   According to the present invention, it is possible to prevent streak-like dirt generated on the substrate when the claw portion on which the substrate is placed enters the processing liquid from outside the processing liquid. Further, the substrate can be placed on the claw portion without excessively immersing the transfer portion in the treatment liquid, and the consumption of the treatment liquid can be reduced by downsizing the treatment tank.

請求項の発明では、各基板が撓んで隣接する基板と接触することを防止することができる。請求項の発明では、処理ガスによる処理も行う基板処理装置においてチャンバの高さを小さくすることができる。 In the invention of claim 2 , it is possible to prevent each substrate from being bent and coming into contact with an adjacent substrate. According to the third aspect of the present invention, the height of the chamber can be reduced in the substrate processing apparatus that also performs processing with the processing gas.

基板処理ユニットの平面図である。It is a top view of a substrate processing unit. 乾燥処理部の内部構成を示す図である。It is a figure which shows the internal structure of a drying process part. 乾燥処理部における基板の処理の流れを示す図である。It is a figure which shows the flow of a process of the board | substrate in a drying process part. 比較例の装置を示す図である。It is a figure which shows the apparatus of a comparative example. 関連技術に係る乾燥処理部を示す図である。It is a figure which shows the drying process part which concerns on related technology .

図1は基板処理ユニット1の平面図である。基板処理ユニット1は、純水や薬液等の処理液による処理を複数の円板状のシリコン基板9(以下、単に「基板9」という。)に対して一括して行う、いわゆるバッチ式の装置である。図1では、互いに垂直なX方向、Y方向およびZ方向を矢印にて図示している。   FIG. 1 is a plan view of the substrate processing unit 1. The substrate processing unit 1 is a so-called batch type apparatus that collectively performs processing with a processing solution such as pure water or a chemical solution on a plurality of disc-shaped silicon substrates 9 (hereinafter simply referred to as “substrates 9”). It is. In FIG. 1, the X direction, the Y direction, and the Z direction perpendicular to each other are indicated by arrows.

基板処理ユニット1は、制御部10と、カセット保持部11と、姿勢変換部12と、処理ユニット2とに大別され、カセット保持部11、姿勢変換部12および処理ユニット2は制御部10により制御される。カセット保持部11では、水平状態(主面が鉛直方向を向く水平姿勢)の複数の基板9を上下方向(鉛直方向であり、図1中のZ方向)に積層した状態で収容するカセット90が保持される。姿勢変換部12では、処理前の複数の基板9がカセット90から搬出されるとともに複数の基板9の姿勢が直立状態(主面が水平方向を向く直立姿勢)に変換され、互いに平行に並んだ直立状態の複数の基板9が処理ユニット2に受け渡される。また、処理ユニット2による処理後の複数の基板9が、直立状態にて処理ユニット2から姿勢変換部12に受け渡され、複数の基板9の姿勢が水平状態に変換された後、複数の基板9はカセット保持部11のカセット90に一括して戻される。   The substrate processing unit 1 is roughly divided into a control unit 10, a cassette holding unit 11, a posture changing unit 12, and a processing unit 2. The cassette holding unit 11, the posture changing unit 12 and the processing unit 2 are divided by the control unit 10. Be controlled. In the cassette holding unit 11, there is a cassette 90 that accommodates a plurality of substrates 9 in a horizontal state (horizontal posture in which the main surface faces the vertical direction) stacked in the vertical direction (vertical direction, Z direction in FIG. 1). Retained. In the posture conversion unit 12, the plurality of substrates 9 before processing are unloaded from the cassette 90, and the postures of the plurality of substrates 9 are converted to an upright state (upright posture in which the main surface faces in the horizontal direction) and are arranged in parallel to each other. A plurality of upright substrates 9 are delivered to the processing unit 2. The plurality of substrates 9 processed by the processing unit 2 are transferred from the processing unit 2 to the posture converting unit 12 in an upright state, and the plurality of substrates 9 are converted into a horizontal state, and then the plurality of substrates are converted. 9 are collectively returned to the cassette 90 of the cassette holder 11.

処理ユニット2は、主搬送機構21と、移載部洗浄部22と、第1薬液処理部23と、第2薬液処理部24と、乾燥処理部3とを備え、第1薬液処理部23、第2薬液処理部24、乾燥処理部3および移載部洗浄部22は、この順序にて図1中のY方向に配列される。第1薬液処理部23は、所定の薬液が貯溜された第1薬液槽231と、リンス液が貯溜された第1リンス液槽232と、第1薬液槽231から第1リンス液槽232へと複数の基板9を一括して搬送する第1リフタ233とを備える。第2薬液処理部24も、第1薬液処理部23と同様に、所定の薬液が貯溜された第2薬液槽241と、リンス液が貯溜された第2リンス液槽242と、第2薬液槽241から第2リンス液槽242へと複数の基板9を一括して搬送する第2リフタ243とを備える。   The processing unit 2 includes a main transport mechanism 21, a transfer unit cleaning unit 22, a first chemical processing unit 23, a second chemical processing unit 24, and a drying processing unit 3, and includes a first chemical processing unit 23, The 2nd chemical | medical solution process part 24, the drying process part 3, and the transfer part washing | cleaning part 22 are arranged in the Y direction in FIG. 1 in this order. The first chemical liquid processing unit 23 includes a first chemical liquid tank 231 in which a predetermined chemical liquid is stored, a first rinse liquid tank 232 in which a rinse liquid is stored, and the first chemical liquid tank 231 to the first rinse liquid tank 232. And a first lifter 233 that collectively transports the plurality of substrates 9. Similarly to the first chemical solution processing unit 23, the second chemical solution processing unit 24 also includes a second chemical solution tank 241 that stores a predetermined chemical solution, a second rinse solution tank 242 that stores a rinse solution, and a second chemical solution tank. And a second lifter 243 that collectively conveys the plurality of substrates 9 from the 241 to the second rinse liquid tank 242.

主搬送機構21は、複数の基板9の支持および昇降を行う移載部211と、水平な図1中のY方向へと移載部211を移動する移載部移動機構212とを備える。移載部211は、Y方向に間隔を空けて配置される一対の支持アーム213と、一対の支持アーム213の間隔を変更するアーム駆動部と、一対の支持アーム213をZ方向に昇降するアーム昇降部とを備える。各支持アーム213の下部にはX方向に長い支持部材214が設けられ、支持部材214には複数の溝がX方向に一定のピッチにて形成される。アーム駆動部は、X方向に平行な軸を中心として各支持アーム213を回動することにより、一対の支持部材214の間隔(すなわち、一対の支持部材214の間の間隙の距離)を変更する。   The main transport mechanism 21 includes a transfer unit 211 that supports and lifts the plurality of substrates 9, and a transfer unit moving mechanism 212 that moves the transfer unit 211 in the horizontal Y direction in FIG. The transfer unit 211 includes a pair of support arms 213 arranged at intervals in the Y direction, an arm drive unit that changes the distance between the pair of support arms 213, and an arm that moves the pair of support arms 213 up and down in the Z direction. And an elevating part. A support member 214 that is long in the X direction is provided below each support arm 213, and a plurality of grooves are formed in the support member 214 at a constant pitch in the X direction. The arm drive unit changes the distance between the pair of support members 214 (that is, the distance between the pair of support members 214) by rotating each support arm 213 about an axis parallel to the X direction. .

基板処理ユニット1では、姿勢変換部12により、主面がYZ平面に平行な直立状態にて処理ユニット2内に複数の基板9が搬送され、Y方向の間隔が変更可能な一対の支持部材214により、基板9の主面に沿うY方向の両側から複数の基板9が挟まれて(正確には、基板9のエッジが上記の溝内に配置されて)支持される。実際には、一対の支持部材214の間隔は、一対の支持部材214により複数の基板9を挟持する際の幅(基板9の直径よりも小さい幅であり、以下、「挟持幅」という。)、および、一対の支持部材214から複数の基板9を解放する際の幅(基板9の直径よりも大きい幅であり、以下、「解放幅」という。)のいずれかとなる。   In the substrate processing unit 1, a plurality of substrates 9 are transported into the processing unit 2 by the attitude conversion unit 12 in an upright state in which the main surface is parallel to the YZ plane, and a pair of support members 214 capable of changing the interval in the Y direction. Thus, the plurality of substrates 9 are sandwiched from both sides in the Y direction along the main surface of the substrate 9 (more precisely, the edge of the substrate 9 is disposed in the groove) and supported. Actually, the interval between the pair of support members 214 is the width when the plurality of substrates 9 are sandwiched by the pair of support members 214 (the width is smaller than the diameter of the substrate 9 and is hereinafter referred to as “clamping width”). , And a width when the plurality of substrates 9 are released from the pair of support members 214 (a width larger than the diameter of the substrate 9, hereinafter referred to as “release width”).

移載部洗浄部22は、Y方向に配列された2つの洗浄槽221を有する。各洗浄槽221内には洗浄液を噴出するノズルと、窒素ガスを噴出するノズルとが設けられる。移載部211の洗浄時には、一対の支持部材214(および、支持アーム213の一部)が、2つの洗浄槽221内にそれぞれ配置される。そして、洗浄液により支持部材214が洗浄され、その後、窒素ガスにより支持部材214に付着した洗浄液が除去される(すなわち、支持部材214が乾燥される。)。   The transfer unit cleaning unit 22 includes two cleaning tanks 221 arranged in the Y direction. Each cleaning tank 221 is provided with a nozzle for ejecting cleaning liquid and a nozzle for ejecting nitrogen gas. When the transfer unit 211 is cleaned, the pair of support members 214 (and a part of the support arm 213) are disposed in the two cleaning tanks 221 respectively. Then, the support member 214 is cleaned with the cleaning liquid, and then the cleaning liquid attached to the support member 214 is removed with nitrogen gas (that is, the support member 214 is dried).

基板9を各薬液処理部23,24にて処理する際には、複数の基板9を挟持する移載部211が薬液槽231,241の上方に配置され、薬液槽231,241内のリフタ233,243が上方へと移動する。リフタ233,243には、直立状態の基板9を下方から支持するための複数の爪部が設けられており、基板9が爪部に当接した後、一対の支持部材214の間隔が解放幅まで広げられることにより、移載部211からリフタ233,243に複数の基板9が移載される。薬液処理部23,24では、リフタ233,243が下降することにより、薬液槽231,241内に複数の基板9が配置され、薬液による処理が複数の基板9に対して一括して行われる。   When the substrate 9 is processed in each of the chemical solution processing units 23 and 24, the transfer unit 211 that sandwiches the plurality of substrates 9 is disposed above the chemical solution tanks 231 and 241 and the lifter 233 in the chemical solution tanks 231 and 241 is disposed. , 243 move upward. The lifters 233 and 243 are provided with a plurality of claw portions for supporting the upright substrate 9 from below, and after the substrate 9 abuts the claw portions, the distance between the pair of support members 214 is the release width. The plurality of substrates 9 are transferred from the transfer unit 211 to the lifters 233 and 243. In the chemical processing units 23 and 24, when the lifters 233 and 243 are lowered, a plurality of substrates 9 are arranged in the chemical baths 231 and 241, and processing with the chemicals is performed on the plurality of substrates 9 at a time.

薬液による処理が完了すると、リフタ233,243が上昇し、続いて、リンス液槽232,242の上方に移動する。そして、リフタ233,243が下降することにより、リンス液槽232,242内に複数の基板9が配置され、リンス液による処理が複数の基板9に対して一括して行われる。リンス液による処理が完了すると、リフタ233,243が上昇し、基板9がリンス液槽232,242の上方に配置される。このとき、移載部211もリンス液槽232,242の上方に配置されており、間隔が解放幅に広げられた一対の支持部材214の間に複数の基板9が位置する。一対の支持部材214の間隔が挟持幅まで狭められた後、リフタ233,243が下降することにより、リフタ233,243から移載部211に複数の基板9が移載される。   When the treatment with the chemical solution is completed, the lifters 233 and 243 are moved up, and subsequently moved above the rinse solution tanks 232 and 242. When the lifters 233 and 243 are lowered, the plurality of substrates 9 are arranged in the rinsing liquid tanks 232 and 242, and the treatment with the rinsing liquid is performed on the plurality of substrates 9 at once. When the treatment with the rinsing liquid is completed, the lifters 233 and 243 are raised, and the substrate 9 is disposed above the rinsing liquid tanks 232 and 242. At this time, the transfer unit 211 is also disposed above the rinse liquid tanks 232 and 242, and the plurality of substrates 9 are positioned between the pair of support members 214 whose intervals are widened to the release width. After the distance between the pair of support members 214 is narrowed to the clamping width, the lifters 233 and 243 are lowered to transfer the plurality of substrates 9 from the lifters 233 and 243 to the transfer unit 211.

図2は、乾燥処理部3の内部構成を示す図であり、図1中の乾燥処理部3をX方向に垂直な面にて切断した断面を示す。なお、図2では、移載部211の一部も図示するとともに、細部における平行斜線の図示を省略している。乾燥処理部3は、内部にて基板9の処理が行われるとともに、上部に開口40を有するチャンバ4を備える。開口40には、開閉可能なカバー41が設けられる。すなわち、チャンバ4の開口40は開閉可能である。チャンバ4の内部には、所定の処理液が貯溜される処理槽5と、チャンバ4内にて基板9を昇降する昇降部6とが設けられる。   FIG. 2 is a diagram showing an internal configuration of the drying processing unit 3, and shows a cross section of the drying processing unit 3 in FIG. 1 cut along a plane perpendicular to the X direction. In addition, in FIG. 2, while showing a part of transfer part 211, the illustration of the parallel oblique line in a detail is abbreviate | omitted. The drying processing unit 3 includes a chamber 4 having an opening 40 at the top while processing the substrate 9 therein. A cover 41 that can be opened and closed is provided in the opening 40. That is, the opening 40 of the chamber 4 can be opened and closed. Inside the chamber 4, there are provided a processing tank 5 in which a predetermined processing liquid is stored, and an elevating part 6 for raising and lowering the substrate 9 in the chamber 4.

昇降部6は、図2の紙面に垂直な方向(X方向であり、以下、「前後方向」ともいう。)に長い複数の爪部61と、複数の爪部61の端部が固定されるとともに爪部61の固定位置から上方に伸びる板状の支持本体62と、支持本体62を図2の上下方向(Z方向)に移動する昇降機構(図示省略)とを有する。昇降部6では、複数の爪部61により、互いに平行に並んだ直立状態の複数の基板9(実際には、前後方向に密に並んでいる。)が下方から支持される。また、昇降機構により複数の爪部61が処理槽5の底部近傍に配置されることにより、爪部61上の複数の基板9は液処理位置(図2中にて二点鎖線にて示す爪部61により支持される位置)に位置し、複数の爪部61が処理槽5の上部近傍に配置されることにより、爪部61上の複数の基板9は受渡位置(図2中にて実線にて示す爪部61により支持される位置)に位置する。すなわち、昇降部6により、複数の基板9が処理槽5内の液処理位置と、処理槽5の上部近傍の受渡位置との間で昇降する。   The elevating part 6 has a plurality of claw parts 61 that are long in a direction perpendicular to the paper surface of FIG. 2 (X direction, hereinafter also referred to as “front-rear direction”), and ends of the plurality of claw parts 61 are fixed. A plate-like support main body 62 extending upward from the fixing position of the claw portion 61 and an elevating mechanism (not shown) for moving the support main body 62 in the vertical direction (Z direction) in FIG. In the elevating part 6, a plurality of upright substrates 9 (actually densely arranged in the front-rear direction) arranged in parallel to each other are supported from below by a plurality of claw parts 61. Further, the plurality of claw portions 61 are arranged in the vicinity of the bottom of the processing tank 5 by the lifting mechanism, so that the plurality of substrates 9 on the claw portion 61 are moved to the liquid processing position (the claw indicated by the two-dot chain line in FIG. 2). 2), the plurality of claws 61 are arranged in the vicinity of the upper portion of the processing tank 5, so that the plurality of substrates 9 on the claws 61 are in a delivery position (solid line in FIG. 2). It is located at a position supported by the claw portion 61 indicated by. That is, the lift unit 6 moves the plurality of substrates 9 up and down between the liquid processing position in the processing tank 5 and the delivery position in the vicinity of the upper part of the processing tank 5.

処理槽5は、上部が開口した略箱型であり、図2中のY方向(以下、「幅方向」という。)における処理槽5の上部の幅は下部の幅よりも大きい。詳細には、液処理位置に配置される基板9の上下方向における中央位置の僅か上方にて処理槽5の幅は変化する。幅方向において互いに向かい合う処理槽5の2つの内側面50の間の距離を内側面間距離として、処理槽5の下部における内側面間距離は、基板9の幅すなわち直径におよそ等しい(正確には、直径よりも僅かに大きい。)。本実施の形態では、基板9の直径は例えば450mm(ミリメートル)である。   The processing tank 5 has a substantially box shape with an open top, and the width of the upper part of the processing tank 5 in the Y direction (hereinafter referred to as “width direction”) in FIG. 2 is larger than the width of the lower part. Specifically, the width of the processing tank 5 changes slightly above the center position in the vertical direction of the substrate 9 disposed at the liquid processing position. The distance between the two inner side surfaces 50 of the processing tank 5 facing each other in the width direction is the distance between the inner side surfaces, and the distance between the inner side surfaces at the lower part of the processing tank 5 is approximately equal to the width or diameter of the substrate 9 (exactly speaking, , Slightly larger than the diameter.) In the present embodiment, the diameter of the substrate 9 is, for example, 450 mm (millimeters).

また、処理槽5の上部における内側面間距離は、移載部211の両支持部材214の幅の和を基板9の幅すなわち直径に足した値である支持部材−基板合計幅よりも大きく、複数の基板9を支持する一対の支持部材214が進入可能な幅である。より詳細には、処理槽5の上部における内側面間距離は、間隔が解放幅に広げられた一対の支持部材214の外側面(他方の支持部材214とは反対側の面)間の距離よりも大きく、一対の支持部材214による基板9の支持および解放が可能な幅である。2つの内側面50のそれぞれでは、液処理位置に配置される基板9の上下方向における中央位置の高さにて、複数の基板9の外縁部を支持する櫛歯状のガイド53(複数の溝が前後方向に一定のピッチにて配列されたガイド53)が設けられる。液処理位置に配置される複数の基板9は、処理槽5の底部近傍に配置された複数の爪部61により下方から支持されるとともに、2つの内側面50上のガイド53により、幅方向の両側から支持される。   Further, the distance between the inner side surfaces in the upper part of the processing tank 5 is larger than the total width of the support member and the substrate, which is a value obtained by adding the width of the support members 214 of the transfer unit 211 to the width of the substrate 9, that is, the diameter. The width is such that the pair of support members 214 that support the plurality of substrates 9 can enter. More specifically, the distance between the inner side surfaces in the upper part of the processing tank 5 is greater than the distance between the outer surfaces of the pair of support members 214 (surfaces opposite to the other support member 214) whose distance is widened to the release width. The width is such that the substrate 9 can be supported and released by the pair of support members 214. In each of the two inner side surfaces 50, comb-shaped guides 53 (a plurality of grooves) supporting the outer edge portions of the plurality of substrates 9 at the height of the center position in the vertical direction of the substrate 9 arranged at the liquid processing position. Are arranged at a constant pitch in the front-rear direction. The plurality of substrates 9 disposed at the liquid processing position are supported from below by a plurality of claw portions 61 disposed in the vicinity of the bottom of the processing tank 5 and are guided in the width direction by the guides 53 on the two inner side surfaces 50. Supported from both sides.

処理槽5の底部近傍には、処理液を供給する処理液ノズル51と、処理槽5の排出口に取り付けられた排出バルブ52とが設けられる。処理液ノズル51は処理液供給部に接続され、排出バルブ52は排出管を介して排液処理部に接続される。   In the vicinity of the bottom of the processing tank 5, a processing liquid nozzle 51 for supplying a processing liquid and a discharge valve 52 attached to the discharge port of the processing tank 5 are provided. The processing liquid nozzle 51 is connected to the processing liquid supply unit, and the discharge valve 52 is connected to the drainage processing unit via a discharge pipe.

チャンバ4の内部には、受渡位置における複数の基板9に向けてガスを噴出する複数の(図1では4つの)ガス噴出部7がさらに設けられる。各ガス噴出部7では、複数の噴出口が前後方向に配列されており、複数の基板9に対しておよそ均一にガスを噴出することが可能である。各ガス噴出部7は、ガス流路であるガス供給管を介して窒素ガスの供給部およびIPA(イソプロピルアルコール)蒸気の供給部に接続され、窒素ガスおよびIPAの蒸気を選択的に噴出可能である。なお、IPAの蒸気には、キャリアガスとしての窒素ガスが含まれる。   Inside the chamber 4, a plurality of (four in FIG. 1) gas ejection portions 7 that eject gas toward the plurality of substrates 9 at the delivery position are further provided. In each gas ejection portion 7, a plurality of ejection ports are arranged in the front-rear direction, and the gas can be ejected to the plurality of substrates 9 approximately uniformly. Each gas ejection section 7 is connected to a nitrogen gas supply section and an IPA (isopropyl alcohol) vapor supply section via a gas supply pipe which is a gas flow path, and can selectively eject nitrogen gas and IPA vapor. is there. Note that the IPA vapor contains nitrogen gas as a carrier gas.

次に、乾燥処理部3における基板9の処理について図3を参照して説明する。乾燥処理部3では、第1または第2薬液処理部23,24における処理後の基板9の乾燥が行われる。図2の乾燥処理部3における基板9の処理では、まず、処理液ノズル51から純水が処理液として噴出され、処理槽5内に処理液が貯溜される(ステップS11)。また、薬液処理部23,24にて処理が行われた複数の基板9は、既述のようにリフタ233,243から移載部211に移載され(図1参照)、移載部211がY方向に移動することにより、図2に示すように、複数の基板9が乾燥処理部3のチャンバ4の上方の位置(以下、「搬送位置」という。)へと搬送される。続いて、チャンバ4のカバー41が開放され、支持アーム213が下降することにより、複数の基板9がチャンバ4内に搬入される。   Next, processing of the substrate 9 in the drying processing unit 3 will be described with reference to FIG. In the drying processing unit 3, the substrate 9 after the processing in the first or second chemical processing unit 23, 24 is dried. In the processing of the substrate 9 in the drying processing unit 3 of FIG. 2, first, pure water is ejected as a processing liquid from the processing liquid nozzle 51, and the processing liquid is stored in the processing tank 5 (step S11). In addition, the plurality of substrates 9 processed in the chemical processing units 23 and 24 are transferred from the lifters 233 and 243 to the transfer unit 211 as described above (see FIG. 1). By moving in the Y direction, as shown in FIG. 2, the plurality of substrates 9 are transported to a position above the chamber 4 of the drying processing unit 3 (hereinafter referred to as “transport position”). Subsequently, the cover 41 of the chamber 4 is opened and the support arm 213 is lowered, whereby a plurality of substrates 9 are carried into the chamber 4.

このとき、処理槽5の上端まで処理液が満たされており、受渡位置における複数の爪部61は処理液中に位置する。一対の支持部材214は処理槽5の上部の内側に進入して(すなわち、処理液中に進入して)、基板9が処理槽5の上部近傍の受渡位置へと搬送され、処理液中の複数の爪部61上に載置される(ステップS12)。一対の支持部材214の間隔は解放幅に広げられ、その後、支持アーム213が上昇してチャンバ4から退避する。支持アーム213の退避後、カバー41が閉塞されて、チャンバ4がおよそ密閉される。   At this time, the processing liquid is filled up to the upper end of the processing tank 5, and the plurality of claw portions 61 at the delivery position are located in the processing liquid. The pair of support members 214 enters the inside of the upper part of the processing tank 5 (that is, enters the processing liquid), and the substrate 9 is transported to a delivery position near the upper part of the processing tank 5, It is placed on the plurality of claw portions 61 (step S12). The distance between the pair of support members 214 is widened to the release width, and then the support arm 213 is raised and retracted from the chamber 4. After retracting the support arm 213, the cover 41 is closed and the chamber 4 is approximately sealed.

続いて、昇降部6により複数の基板9が下降して処理液内の液処理位置に配置される(ステップS13)。すなわち、複数の基板9の全体が処理液中に浸漬され、基板9が濡れた状態が維持される。また、ガス噴出部7では、所定温度に加熱されたIPAの蒸気が所定の流量にて噴出される。IPAの蒸気の噴出開始から所定時間経過してチャンバ4内にIPAの蒸気が充満すると(ステップS14)、排出バルブ52を開放することにより、処理槽5内の処理液が短時間にて排出される(ステップS15)。そして、昇降部6により複数の基板9が上昇して受渡位置に配置される(ステップS16)。これにより、基板9の表面においてIPAの蒸気が凝縮する。   Subsequently, the plurality of substrates 9 are lowered by the elevating unit 6 and placed at the liquid processing position in the processing liquid (step S13). That is, the entirety of the plurality of substrates 9 is immersed in the processing liquid, and the substrate 9 is kept wet. Moreover, in the gas ejection part 7, the vapor | steam of IPA heated by predetermined temperature is ejected by predetermined flow rate. When the IPA vapor is filled in the chamber 4 after a predetermined time has elapsed from the start of the IPA vapor ejection (step S14), the treatment liquid in the treatment tank 5 is discharged in a short time by opening the discharge valve 52. (Step S15). And the some board | substrate 9 raises by the raising / lowering part 6, and is arrange | positioned in a delivery position (step S16). As a result, the IPA vapor is condensed on the surface of the substrate 9.

その後、IPAの蒸気の噴出が停止され、所定温度に加熱された窒素ガスがガス噴出部7から勢いよく噴出される(ステップS17)。また、チャンバ4に接続された減圧機構(図示省略)によりチャンバ4内が減圧される。このように、処理槽5内の処理液が排出された状態にて(すなわち、処理槽5内に処理液が存在しない状態にて)、受渡位置に配置された基板9に向けてガス噴出部7から窒素ガスを噴出するとともに、チャンバ4内を減圧することにより、基板9の表面に付着したIPA(純水を含む。)が短時間にて効率よく除去される。なお、受渡位置は、窒素ガスにて基板9を乾燥するガス処理位置でもある。   Thereafter, the ejection of the IPA vapor is stopped, and the nitrogen gas heated to a predetermined temperature is ejected vigorously from the gas ejection section 7 (step S17). Further, the inside of the chamber 4 is decompressed by a decompression mechanism (not shown) connected to the chamber 4. As described above, in a state in which the processing liquid in the processing tank 5 is discharged (that is, in a state in which no processing liquid is present in the processing tank 5), the gas ejection unit is directed toward the substrate 9 disposed at the delivery position. The nitrogen gas is ejected from 7 and the pressure in the chamber 4 is reduced, so that IPA (including pure water) adhering to the surface of the substrate 9 is efficiently removed in a short time. The delivery position is also a gas processing position for drying the substrate 9 with nitrogen gas.

窒素ガスの噴出およびチャンバ4内の減圧が所定時間継続されると、減圧機構の駆動が停止されるとともに、窒素ガスの流量が下げられる。チャンバ4内が大気圧に戻ると、カバー41が開放される。続いて、チャンバ4の上方に配置された支持アーム213が下降して、間隔が解放幅に広げられた一対の支持部材214が、受渡位置の複数の基板9の幅方向における両外側に配置される。一対の支持部材214の間隔が挟持幅まで狭められた後、昇降部6が下降することにより、昇降部6から移載部211に複数の基板9が移載される。なお、一対の支持部材214は、移載部洗浄部22により洗浄および乾燥されている。その後、支持アーム213が上昇することにより、複数の基板9がチャンバ4から搬出され、搬送位置に配置される(ステップS18)。これにより、乾燥処理部3における基板9の処理が完了する。なお、本実施形態において、移載部211の支持部材214を処理液中に進入させたくない場合には、爪部61が完全に液面から離れるまで昇降部6を上昇させてから基板を受け渡しする動作も選択可能である。   When the ejection of nitrogen gas and the decompression of the chamber 4 are continued for a predetermined time, the decompression mechanism is stopped and the flow rate of the nitrogen gas is lowered. When the inside of the chamber 4 returns to atmospheric pressure, the cover 41 is opened. Subsequently, the support arm 213 disposed above the chamber 4 is lowered, and a pair of support members 214 whose intervals are widened to the release width are disposed on both outer sides in the width direction of the plurality of substrates 9 at the delivery position. The After the interval between the pair of support members 214 is narrowed to the clamping width, the elevating unit 6 is lowered, whereby the plurality of substrates 9 are transferred from the elevating unit 6 to the transfer unit 211. The pair of support members 214 is cleaned and dried by the transfer unit cleaning unit 22. Thereafter, when the support arm 213 is raised, the plurality of substrates 9 are unloaded from the chamber 4 and placed at the transfer position (step S18). Thereby, the process of the board | substrate 9 in the drying process part 3 is completed. In this embodiment, when the support member 214 of the transfer unit 211 is not desired to enter the processing liquid, the lifting / lowering unit 6 is raised until the claw unit 61 is completely separated from the liquid surface, and then the substrate is delivered. The operation to be performed can also be selected.

図4は、比較例の装置を示す図である。図4の比較例の装置では、受渡位置における基板91(図4中にて実線にて示す基板)が処理槽922の処理液外に配置された爪部921により支持されるため、基板91が液処理位置(二点鎖線にて示す基板91の位置)に移動する際に、爪部921が処理液外から処理液内に進入し、爪部921に付着する不要物(例えば、基板の載置時等に爪部921と基板とが擦れ合うことにより発生した微小な不要物)により、基板の主面上に上下方向に伸びるスジ状の汚れが発生することがある。また、一対の支持部材により、基板を処理槽の底部近傍まで搬送して基板を処理液中に浸漬する他の比較例の装置を想定した場合、このような装置では、底部近傍において一対の支持部材による基板の解放が可能なように、処理槽の幅を大きくする必要があり、処理液の消費量が増大してしまう。   FIG. 4 is a diagram illustrating an apparatus according to a comparative example. In the apparatus of the comparative example of FIG. 4, the substrate 91 at the delivery position (the substrate indicated by the solid line in FIG. 4) is supported by the claw portion 921 disposed outside the processing liquid in the processing tank 922, so When moving to the liquid processing position (the position of the substrate 91 indicated by the two-dot chain line), the claw portion 921 enters the processing liquid from the outside of the processing liquid and adheres to the claw portion 921 (for example, an unloading substrate). (Small unnecessary material generated by rubbing between the claw portion 921 and the substrate during placement or the like) may cause streak-like dirt extending in the vertical direction on the main surface of the substrate. In addition, when assuming a device of another comparative example that transports the substrate to the vicinity of the bottom of the processing tank and immerses the substrate in the processing liquid by the pair of support members, in such a device, the pair of supports is supported in the vicinity of the bottom. It is necessary to increase the width of the treatment tank so that the substrate can be released by the member, and the consumption of the treatment liquid increases.

これに対し、乾燥処理部3、移載部211および制御部10が協働して実現する基板処理装置では、液処理位置に配置された基板9の上下方向における中央位置において、処理槽5の内側面間距離が、移載部211の両支持部材214の幅の和を基板9の幅すなわち直径に足した値である支持部材−基板合計幅よりも小さい。そして、移載部211により処理槽5の上方の搬送位置から処理槽5の上部近傍の受渡位置へと基板9を搬送する際に、移載部211を過度に処理液中に浸けることなく処理液中に位置する爪部61上に基板9が載置される。このような基板処理装置では、基板が載置された爪部が処理液外から処理液内に進入する場合に基板上に発生する(可能性がある)スジ状の汚れを防止することができる。また、処理槽の小型化により処理液の消費量を削減することもできる。   On the other hand, in the substrate processing apparatus realized by the cooperation of the drying processing unit 3, the transfer unit 211, and the control unit 10, the processing tank 5 has a central position in the vertical direction of the substrate 9 arranged at the liquid processing position. The distance between the inner side surfaces is smaller than the total width of the support member and the substrate, which is a value obtained by adding the sum of the widths of the two support members 214 of the transfer unit 211 to the width of the substrate 9, that is, the diameter. Then, when the substrate 9 is transferred from the transfer position above the processing tank 5 to the delivery position near the top of the processing tank 5 by the transfer section 211, the transfer section 211 is processed without being excessively immersed in the processing liquid. The substrate 9 is placed on the claw portion 61 located in the liquid. In such a substrate processing apparatus, it is possible to prevent streak-like dirt that may occur on the substrate when the claw portion on which the substrate is placed enters the processing liquid from outside the processing liquid. . Further, the consumption of the processing liquid can be reduced by downsizing the processing tank.

また、図4の比較例の装置では、液処理位置と受渡位置との間の距離(図4中に二点鎖線にて示す基板と、実線にて示す基板との中心間距離)が基板の直径よりも大きいため、チャンバ923の高さが大きくなってしまう。したがって、大型の基板用の装置では、装置自体の搬送(装置の製造場所から使用場所への搬送)等に支障が生じる可能性がある。   In the apparatus of the comparative example in FIG. 4, the distance between the liquid processing position and the delivery position (the distance between the centers of the substrate indicated by the two-dot chain line and the substrate indicated by the solid line in FIG. 4) is the substrate. Since it is larger than the diameter, the height of the chamber 923 is increased. Therefore, in the apparatus for a large substrate, there is a possibility that trouble may occur in the transportation of the apparatus itself (transportation from the manufacturing place of the apparatus to the use place).

これに対し、乾燥処理部3では、爪部61が処理槽5内に配置された状態にて基板9が移載部211から爪部61に受け渡され、上下方向における液処理位置と受渡位置との間の距離が、基板9の直径よりも小さい。これにより、処理液および処理ガスによる処理を行う基板処理装置においてチャンバ4の高さを小さくすることができ、大型の基板の処理に用いられる基板処理装置の大型化を抑制することができる(後述の図5の乾燥処理部3aにおいて同様)。   On the other hand, in the drying processing unit 3, the substrate 9 is transferred from the transfer unit 211 to the claw unit 61 in a state where the claw unit 61 is disposed in the processing tank 5, and the liquid processing position and the delivery position in the vertical direction are transferred. Is smaller than the diameter of the substrate 9. Accordingly, the height of the chamber 4 can be reduced in the substrate processing apparatus that performs processing with the processing liquid and the processing gas, and an increase in the size of the substrate processing apparatus used for processing a large substrate can be suppressed (described later). The same applies to the drying processing unit 3a in FIG.

ところで、互いに平行に並んだ直立状態の複数の大型の基板9を爪部61のみにより支持する場合、処理中に各基板9が撓んで隣接する基板9と接触し、基板9上に形成されたパターンが損傷する虞がある。これに対し、乾燥処理部3では、処理槽5が、液処理位置に配置された複数の基板9の上下方向における中央位置において複数の基板9の外縁部を支持するガイド53を有することにより、各基板9が撓んで隣接する基板9と接触することを防止することができる。なお、基板を処理槽の底部近傍まで搬送して基板を処理液中に浸漬する上記他の比較例の装置では、このようなガイドを設けることが困難である。   By the way, when supporting a plurality of large-sized substrates 9 arranged in parallel with each other only by the claw portions 61, each substrate 9 is bent during the processing and comes into contact with the adjacent substrate 9, and is formed on the substrate 9. The pattern may be damaged. On the other hand, in the drying processing unit 3, the processing tank 5 has a guide 53 that supports the outer edge portions of the plurality of substrates 9 at the center position in the vertical direction of the plurality of substrates 9 arranged at the liquid processing position. Each substrate 9 can be prevented from bending and coming into contact with the adjacent substrate 9. In addition, it is difficult to provide such a guide in the apparatus of the other comparative example in which the substrate is transported to the vicinity of the bottom of the processing tank and the substrate is immersed in the processing liquid.

図5は、本発明の関連技術に係る乾燥処理部を示す図である。図5の乾燥処理部3aは、図2の乾燥処理部3と比較して、処理槽5aの形状のみが相違する。他の構成は図2とほぼ同様であり、同じ構成に同符号を付している。 FIG. 5 is a diagram showing a drying processing unit according to the related art of the present invention . The drying processing unit 3a in FIG. 5 is different from the drying processing unit 3 in FIG. 2 only in the shape of the processing tank 5a. Other configurations are substantially the same as those in FIG. 2, and the same reference numerals are given to the same configurations.

乾燥処理部3aの処理槽5aでは、上下方向における処理槽5aの全体において、幅方向(Y方向)に対向する内側面50の間の距離である内側面間距離が一定であり、基板9の直径におよそ等しい(正確には、直径よりも僅かに大きい。)。換言すると、上下方向における処理槽5aの全体において、内側面間距離が、移載部211の両支持部材214の幅の和を基板9の直径に足した値である支持部材−基板合計幅よりも小さく、複数の基板9を支持する一対の支持部材214が進入不能な幅である。処理槽5aにおいても、処理槽5と同様に、複数の基板9の外縁部を支持するガイド53が、液処理位置に配置された基板9(図5中に二点鎖線にて示す基板9)の上下方向における中央位置に設けられる。   In the processing tank 5a of the drying processing unit 3a, the distance between the inner side surfaces, which is the distance between the inner side surfaces 50 facing in the width direction (Y direction), is constant throughout the processing tank 5a in the vertical direction. Approximately equal to the diameter (exactly, slightly larger than the diameter). In other words, in the entire processing tank 5a in the vertical direction, the distance between the inner side surfaces is the support member-substrate total width, which is a value obtained by adding the sum of the widths of both support members 214 of the transfer unit 211 to the diameter of the substrate 9. The width of the pair of support members 214 that support the plurality of substrates 9 is not allowed to enter. Also in the processing tank 5a, as in the processing tank 5, the guide 53 that supports the outer edges of the plurality of substrates 9 is disposed at the liquid processing position (the substrate 9 indicated by a two-dot chain line in FIG. 5). Is provided at a central position in the vertical direction.

基板9を搬送位置から受渡位置へと搬送する際には、図5中に実線にて示すように、支持部材214を処理液中に浸けることなく処理液中に位置する爪部61上に基板9が載置される。したがって、基板が載置された爪部が処理液外から処理液内に進入する場合に基板上に発生するスジ状の汚れを防止するとともに、基板9を支持する支持部材214が処理液外から処理液内に進入する場合に基板9上に発生する(可能性がある)汚れも防止することができる。また、図2の処理槽5に比べて処理槽5aがさらに小型化されるため、処理液の消費量をより削減することができる。一方、図2の処理槽5では、図5の処理槽5aに比べて、上下方向における液処理位置と受渡位置との間の距離を短くすることができ、チャンバ4の高さをさらに小さくすることができる。   When the substrate 9 is transferred from the transfer position to the delivery position, as shown by the solid line in FIG. 5, the substrate is placed on the claw portion 61 positioned in the processing liquid without immersing the support member 214 in the processing liquid. 9 is placed. Therefore, when the claw portion on which the substrate is placed enters the processing liquid from outside the processing liquid, streak-like dirt generated on the substrate is prevented, and the support member 214 that supports the substrate 9 is provided from outside the processing liquid. It is also possible to prevent contamination (which may occur) on the substrate 9 when entering the processing liquid. Moreover, since the processing tank 5a is further reduced in size as compared with the processing tank 5 of FIG. 2, the consumption of the processing liquid can be further reduced. On the other hand, in the processing tank 5 of FIG. 2, the distance between the liquid processing position and the delivery position in the vertical direction can be shortened compared to the processing tank 5 a of FIG. be able to.

基板処理装置では、様々な変形が可能である。 Above Symbol substrate processing apparatus, various modifications are possible.

上記実施の形態では、図2および図5の双方の処理槽5,5aにおいて、液処理位置に配置された基板9の上下方向における中央位置から下側において、処理槽5,5aの内側面間距離が支持部材−基板合計幅よりも小さいが、処理槽の設計によっては(例えば、大型の処理液ノズル51を配置するスペースを確保するために)、処理槽5aの底部近傍にて内側面間距離が支持部材−基板合計幅よりも大きくされてもよい。すなわち、液処理位置に配置された基板9の上下方向における少なくとも中央位置において、処理槽の内側面間距離が支持部材−基板合計幅よりも小さくされていればよい。   In the above embodiment, in the processing tanks 5 and 5a of both FIG. 2 and FIG. 5, the distance between the inner side surfaces of the processing tanks 5 and 5a is lower than the center position in the vertical direction of the substrate 9 disposed at the liquid processing position. Although the distance is smaller than the total width of the support member and the substrate, depending on the design of the treatment tank (for example, in order to secure a space for arranging the large treatment liquid nozzle 51), the distance between the inner surfaces in the vicinity of the bottom of the treatment tank 5a The distance may be larger than the total width of the support member and the substrate. That is, the distance between the inner side surfaces of the processing tank is required to be smaller than the total width of the support member and the substrate at least at the center position in the vertical direction of the substrate 9 disposed at the liquid processing position.

上記基板処理装置は、1つの基板9のみを処理するものであってもよく、この場合、処理槽の容積をさらに小さくすることができる。   The substrate processing apparatus may process only one substrate 9, and in this case, the volume of the processing tank can be further reduced.

乾燥処理部3,3aにおいて、処理液ノズル51から純水以外の処理液が噴出されてもよい。また、ガス噴出部7では、窒素ガスおよびIPAの蒸気以外のガスが噴出されてよい。   In the drying processing units 3 and 3a, a processing liquid other than pure water may be ejected from the processing liquid nozzle 51. Moreover, in gas ejection part 7, gas other than nitrogen gas and the vapor | steam of IPA may be ejected.

処理槽の(一部の)内側面間距離を支持部材−基板合計幅よりも小さくしつつ、移載部により処理液中に位置する爪部上に基板を載置する上記手法は、フッ酸(HF)等の薬液を用いて基板9を処理する処理部(例えば、上記薬液処理部23,24)にて採用されてもよい。なお、図1の薬液処理部23,24では、ガス噴出部およびチャンバは設けられない。   The above-described method of placing the substrate on the claw portion located in the treatment liquid by the transfer portion while the distance between the (in part) inner surfaces of the treatment tank is smaller than the total width of the support member and the substrate is hydrofluoric acid. You may employ | adopt in the process part (for example, said chemical | medical solution process parts 23 and 24) which processes the board | substrate 9 using chemical | medical solutions, such as (HF). Note that the chemical solution processing units 23 and 24 in FIG. 1 are not provided with a gas ejection unit and a chamber.

基板処理装置において処理される基板9は、シリコン基板に限定されず、ガラス基板等の他の種類の基板であってよい。   The substrate 9 processed in the substrate processing apparatus is not limited to a silicon substrate, and may be another type of substrate such as a glass substrate.

上記実施の形態および各変形例における構成は、相互に矛盾しない限り適宜組み合わされてよい。   The configurations in the above-described embodiments and modifications may be combined as appropriate as long as they do not contradict each other.

3,3a 乾燥処理部
4 チャンバ
5,5a 処理槽
6 昇降部
7 ガス噴出部
9 基板
10 制御部
211 移載部
214 支持部材
40 開口
50 内側面
53 ガイド
61 爪部
S11,S12 ステップ
3, 3a Drying processing section 4 Chamber 5, 5a Processing tank 6 Lifting section 7 Gas ejection section 9 Substrate 10 Control section 211 Transfer section 214 Support member 40 Opening 50 Inner side surface 53 Guide 61 Claw section S11, S12 Step

Claims (4)

板状の基板を処理する基板処理装置であって、
処理液が貯溜される処理槽と、
前記処理槽内にて直立状態の基板を下方から支持する爪部を有し、前記爪部が前記処理槽の底部近傍に配置される液処理位置と、前記爪部が前記処理槽の上部近傍に配置される受渡位置との間で前記基板を昇降する昇降部と、
直立状態の基板の主面に沿う水平な幅方向の間隔が変更可能な一対の支持部材により、前記基板を支持するとともに、前記処理槽の上方である搬送位置と前記受渡位置との間で前記基板を昇降する移載部と、
前記移載部により前記搬送位置から前記受渡位置へと基板を搬送して、前記処理液中に位置する前記爪部上に前記基板を載置する制御部と、
を備え、
前記液処理位置に配置された基板の上下方向における中央位置から下側において、前記幅方向における前記処理槽の内側面間距離が、前記移載部の両支持部材の幅の和を前記基板の幅に足した値である支持部材−基板合計幅よりも小さく、
前記処理槽の前記上部の前記内側面間距離が、前記一対の支持部材による基板の支持および解放が可能な幅であることを特徴とする基板処理装置。
A substrate processing apparatus for processing a plate-shaped substrate,
A treatment tank in which treatment liquid is stored;
A claw portion that supports a substrate in an upright state in the processing tank from below, a liquid processing position where the claw portion is disposed near the bottom of the processing tank, and the claw portion is near the top of the processing tank An elevating part that elevates and lowers the substrate between a delivery position arranged in
The substrate is supported by a pair of support members capable of changing a horizontal width direction interval along the main surface of the substrate in an upright state, and between the transfer position and the delivery position above the processing tank. A transfer section for raising and lowering the substrate;
A control unit configured to transfer the substrate from the transfer position to the delivery position by the transfer unit and place the substrate on the claw unit located in the processing liquid;
With
In downward from central position within that put in the vertical direction of the substrate disposed in the liquid processing position, the inner surface distance between the processing bath in the width direction, the sum of the widths of both support members of the transfer unit the support member is a value obtained by adding the width of the substrate - rather smaller than the substrate total width,
The substrate processing apparatus , wherein the distance between the inner side surfaces of the upper portion of the processing tank is a width that allows the substrate to be supported and released by the pair of support members .
請求項1に記載の基板処理装置であって、
互いに平行に並んだ直立状態の複数の基板が前記爪部により支持され、
前記処理槽が、前記液処理位置に配置された前記複数の基板の前記上下方向における中央位置において前記複数の基板の外縁部を支持するガイドを有することを特徴とする基板処理装置。
The substrate processing apparatus according to claim 1 ,
A plurality of upright substrates arranged in parallel to each other are supported by the claw portions,
The substrate processing apparatus, wherein the processing tank includes a guide that supports outer edge portions of the plurality of substrates at a central position in the vertical direction of the plurality of substrates disposed at the liquid processing position.
請求項1または2に記載の基板処理装置であって、
内部に前記処理槽が配置され、上部に開閉可能な開口を有するチャンバと、
前記処理槽内の前記処理液が排出された状態にて、前記受渡位置に配置された基板に向けて処理ガスを噴出するガス噴出部と、
をさらに備え、
前記搬送位置が前記チャンバの上方であり、
前記上下方向における前記液処理位置と前記受渡位置との間の距離が、基板の幅よりも小さいことを特徴とする基板処理装置。
The substrate processing apparatus according to claim 1 or 2,
A chamber having an opening that can be opened and closed at an upper portion thereof, wherein the processing tank is disposed inside;
In a state where the processing liquid in the processing tank is discharged, a gas ejection unit that ejects a processing gas toward the substrate disposed at the delivery position;
Further comprising
The transfer position is above the chamber;
The substrate processing apparatus, wherein a distance between the liquid processing position and the delivery position in the vertical direction is smaller than a width of the substrate.
基板処理装置において板状の基板を処理する基板処理方法であって、
前記基板処理装置が、
処理槽と、
前記処理槽内にて直立状態の基板を下方から支持する爪部を有し、前記爪部が前記処理槽の底部近傍に配置される液処理位置と、前記爪部が前記処理槽の上部近傍に配置される受渡位置との間で前記基板を昇降する昇降部と、
直立状態の基板の主面に沿う水平な幅方向の間隔が変更可能な一対の支持部材により、前記基板を支持するとともに、前記処理槽の上方である搬送位置と前記受渡位置との間で前記基板を昇降する移載部と、
を備え、
前記液処理位置に配置された基板の上下方向における中央位置から下側において、前記幅方向における前記処理槽の内側面間距離が、前記移載部の両支持部材の幅の和を前記基板の幅に足した値である支持部材−基板合計幅よりも小さく、
前記処理槽の前記上部の前記内側面間距離が、前記一対の支持部材による基板の支持および解放が可能な幅であり、
前記基板処理方法が、
a)前記処理槽内に処理液を貯溜する工程と、
b)前記移載部により前記搬送位置から前記受渡位置へと基板を搬送して、前記処理液中に位置する前記爪部上に前記基板を載置する工程と、
を備えることを特徴とする基板処理方法。
A substrate processing method for processing a plate-like substrate in a substrate processing apparatus,
The substrate processing apparatus is
A treatment tank;
A claw portion that supports a substrate in an upright state in the processing tank from below, a liquid processing position where the claw portion is disposed near the bottom of the processing tank, and the claw portion is near the top of the processing tank An elevating part that elevates and lowers the substrate between a delivery position arranged in
The substrate is supported by a pair of support members capable of changing a horizontal width direction interval along the main surface of the substrate in an upright state, and between the transfer position and the delivery position above the processing tank. A transfer section for raising and lowering the substrate;
With
In downward from central position within that put in the vertical direction of the substrate disposed in the liquid processing position, the inner surface distance between the processing bath in the width direction, the sum of the widths of both support members of the transfer unit Less than the support member-substrate total width, which is a value added to the width of the substrate,
The distance between the inner side surfaces of the upper portion of the processing tank is a width capable of supporting and releasing the substrate by the pair of support members,
The substrate processing method comprises:
a) storing a processing solution in the processing tank;
b) transporting the substrate from the transport position to the delivery position by the transfer unit, and placing the substrate on the claw portion located in the processing liquid;
A substrate processing method comprising:
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