JP2013008534A - 荷電粒子線レンズ用電極 - Google Patents

荷電粒子線レンズ用電極 Download PDF

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Publication number
JP2013008534A
JP2013008534A JP2011139965A JP2011139965A JP2013008534A JP 2013008534 A JP2013008534 A JP 2013008534A JP 2011139965 A JP2011139965 A JP 2011139965A JP 2011139965 A JP2011139965 A JP 2011139965A JP 2013008534 A JP2013008534 A JP 2013008534A
Authority
JP
Japan
Prior art keywords
region
charged particle
electrode
particle beam
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2011139965A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013008534A5 (enExample
Inventor
Kazuji Nomura
和司 野村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2011139965A priority Critical patent/JP2013008534A/ja
Priority to PCT/JP2012/063235 priority patent/WO2012176574A1/en
Priority to US14/119,217 priority patent/US20140091229A1/en
Publication of JP2013008534A publication Critical patent/JP2013008534A/ja
Publication of JP2013008534A5 publication Critical patent/JP2013008534A5/ja
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2011139965A 2011-06-23 2011-06-23 荷電粒子線レンズ用電極 Withdrawn JP2013008534A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011139965A JP2013008534A (ja) 2011-06-23 2011-06-23 荷電粒子線レンズ用電極
PCT/JP2012/063235 WO2012176574A1 (en) 2011-06-23 2012-05-17 Electrode for a charged particle beam lens
US14/119,217 US20140091229A1 (en) 2011-06-23 2012-05-17 Electrode for a charged particle beam lens

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011139965A JP2013008534A (ja) 2011-06-23 2011-06-23 荷電粒子線レンズ用電極

Publications (2)

Publication Number Publication Date
JP2013008534A true JP2013008534A (ja) 2013-01-10
JP2013008534A5 JP2013008534A5 (enExample) 2014-07-31

Family

ID=46420489

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011139965A Withdrawn JP2013008534A (ja) 2011-06-23 2011-06-23 荷電粒子線レンズ用電極

Country Status (3)

Country Link
US (1) US20140091229A1 (enExample)
JP (1) JP2013008534A (enExample)
WO (1) WO2012176574A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
CN104520968B (zh) 2012-05-14 2017-07-07 迈普尔平版印刷Ip有限公司 带电粒子光刻系统和射束产生器
US10663746B2 (en) * 2016-11-09 2020-05-26 Advanced Semiconductor Engineering, Inc. Collimator, optical device and method of manufacturing the same
JP2018160533A (ja) * 2017-03-22 2018-10-11 株式会社ニューフレアテクノロジー マルチビーム用のブランキング装置
JP7689139B2 (ja) * 2020-03-12 2025-06-05 カール ツァイス マルティセム ゲゼルシヤフト ミット ベシュレンクテル ハフツング マルチビーム発生ユニットおよびマルチビーム偏向ユニットの特定の改善

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6188438A (ja) * 1984-10-08 1986-05-06 Nippon Telegr & Teleph Corp <Ntt> フライズアイレンズの製造方法
JPH05190129A (ja) * 1992-01-13 1993-07-30 Toshiba Corp 静電型レンズ
JPH09171795A (ja) * 1995-11-13 1997-06-30 Ion Diagnostics Inc マルチビーム電子線リトグラフィ・システム用電子カラム光学系
JP3166946B2 (ja) * 1993-02-02 2001-05-14 日本電信電話株式会社 電子ビ―ム露光装置
WO2009119504A1 (ja) * 2008-03-26 2009-10-01 株式会社堀場製作所 荷電粒子線用静電レンズ

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5436460A (en) * 1991-08-20 1995-07-25 Ims Ionen Mikrofabrikations Systeme Gesellschaft M.B.H. Ion-optical imaging system
WO1998043272A1 (fr) * 1997-03-26 1998-10-01 Hitachi, Ltd. Tube cathodique couleur
US20100200766A1 (en) * 2007-07-26 2010-08-12 Ho Seob Kim Electron emitter having nano-structure tip and electron column using the same
JP2011139965A (ja) 2010-01-05 2011-07-21 Seiko Epson Corp 液滴吐出装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6188438A (ja) * 1984-10-08 1986-05-06 Nippon Telegr & Teleph Corp <Ntt> フライズアイレンズの製造方法
JPH05190129A (ja) * 1992-01-13 1993-07-30 Toshiba Corp 静電型レンズ
JP3166946B2 (ja) * 1993-02-02 2001-05-14 日本電信電話株式会社 電子ビ―ム露光装置
JPH09171795A (ja) * 1995-11-13 1997-06-30 Ion Diagnostics Inc マルチビーム電子線リトグラフィ・システム用電子カラム光学系
WO2009119504A1 (ja) * 2008-03-26 2009-10-01 株式会社堀場製作所 荷電粒子線用静電レンズ

Also Published As

Publication number Publication date
US20140091229A1 (en) 2014-04-03
WO2012176574A1 (en) 2012-12-27

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