JP2013004216A - 荷電粒子線レンズ - Google Patents

荷電粒子線レンズ Download PDF

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Publication number
JP2013004216A
JP2013004216A JP2011131963A JP2011131963A JP2013004216A JP 2013004216 A JP2013004216 A JP 2013004216A JP 2011131963 A JP2011131963 A JP 2011131963A JP 2011131963 A JP2011131963 A JP 2011131963A JP 2013004216 A JP2013004216 A JP 2013004216A
Authority
JP
Japan
Prior art keywords
electrode
charged particle
particle beam
support
beam lens
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2011131963A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013004216A5 (cg-RX-API-DMAC7.html
Inventor
Koichi Tsunoda
浩一 角田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2011131963A priority Critical patent/JP2013004216A/ja
Priority to PCT/JP2012/062572 priority patent/WO2012172913A1/en
Priority to US14/118,963 priority patent/US8829465B2/en
Publication of JP2013004216A publication Critical patent/JP2013004216A/ja
Publication of JP2013004216A5 publication Critical patent/JP2013004216A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/03—Mounting, supporting, spacing or insulating electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/1205—Microlenses

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2011131963A 2011-06-14 2011-06-14 荷電粒子線レンズ Withdrawn JP2013004216A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011131963A JP2013004216A (ja) 2011-06-14 2011-06-14 荷電粒子線レンズ
PCT/JP2012/062572 WO2012172913A1 (en) 2011-06-14 2012-05-10 Charged particle beam lens
US14/118,963 US8829465B2 (en) 2011-06-14 2012-05-10 Charged particle beam lens having a particular support electrically insulating first and second electrodes from each other

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011131963A JP2013004216A (ja) 2011-06-14 2011-06-14 荷電粒子線レンズ

Publications (2)

Publication Number Publication Date
JP2013004216A true JP2013004216A (ja) 2013-01-07
JP2013004216A5 JP2013004216A5 (cg-RX-API-DMAC7.html) 2014-08-07

Family

ID=46321408

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011131963A Withdrawn JP2013004216A (ja) 2011-06-14 2011-06-14 荷電粒子線レンズ

Country Status (3)

Country Link
US (1) US8829465B2 (cg-RX-API-DMAC7.html)
JP (1) JP2013004216A (cg-RX-API-DMAC7.html)
WO (1) WO2012172913A1 (cg-RX-API-DMAC7.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015023286A (ja) * 2013-07-17 2015-02-02 アイエムエス ナノファブリケーション アーゲー 複数のブランキングアレイを有するパターン画定装置
JP2022188764A (ja) * 2021-06-09 2022-12-21 韓國電子通信研究院 高電圧駆動装置
JP2023505651A (ja) * 2020-11-10 2023-02-10 エルジー エナジー ソリューション リミテッド スイッチタイプの電力遮断装置及びそれを含むバッテリーパック

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EP2757571B1 (en) 2013-01-17 2017-09-20 IMS Nanofabrication AG High-voltage insulation device for charged-particle optical apparatus
EP2830083B1 (en) 2013-07-25 2016-05-04 IMS Nanofabrication AG Method for charged-particle multi-beam exposure
EP2913838B1 (en) 2014-02-28 2018-09-19 IMS Nanofabrication GmbH Compensation of defective beamlets in a charged-particle multi-beam exposure tool
EP2937889B1 (en) 2014-04-25 2017-02-15 IMS Nanofabrication AG Multi-beam tool for cutting patterns
EP2950325B1 (en) 2014-05-30 2018-11-28 IMS Nanofabrication GmbH Compensation of dose inhomogeneity using overlapping exposure spots
JP6892214B2 (ja) 2014-07-10 2021-06-23 アイエムエス ナノファブリケーション ゲーエムベーハー 畳み込みカーネルを使用する粒子ビーム描画機のカスタマイズ化
US9568907B2 (en) 2014-09-05 2017-02-14 Ims Nanofabrication Ag Correction of short-range dislocations in a multi-beam writer
DE102015202172B4 (de) 2015-02-06 2017-01-19 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem und Verfahren zur teilchenoptischen Untersuchung eines Objekts
US9653263B2 (en) 2015-03-17 2017-05-16 Ims Nanofabrication Ag Multi-beam writing of pattern areas of relaxed critical dimension
EP3096342B1 (en) 2015-03-18 2017-09-20 IMS Nanofabrication AG Bi-directional double-pass multi-beam writing
US10410831B2 (en) 2015-05-12 2019-09-10 Ims Nanofabrication Gmbh Multi-beam writing using inclined exposure stripes
US11302511B2 (en) * 2016-02-04 2022-04-12 Kla Corporation Field curvature correction for multi-beam inspection systems
US10325756B2 (en) 2016-06-13 2019-06-18 Ims Nanofabrication Gmbh Method for compensating pattern placement errors caused by variation of pattern exposure density in a multi-beam writer
US10325757B2 (en) 2017-01-27 2019-06-18 Ims Nanofabrication Gmbh Advanced dose-level quantization of multibeam-writers
US10522329B2 (en) 2017-08-25 2019-12-31 Ims Nanofabrication Gmbh Dose-related feature reshaping in an exposure pattern to be exposed in a multi beam writing apparatus
US11569064B2 (en) 2017-09-18 2023-01-31 Ims Nanofabrication Gmbh Method for irradiating a target using restricted placement grids
US10651010B2 (en) 2018-01-09 2020-05-12 Ims Nanofabrication Gmbh Non-linear dose- and blur-dependent edge placement correction
US10840054B2 (en) 2018-01-30 2020-11-17 Ims Nanofabrication Gmbh Charged-particle source and method for cleaning a charged-particle source using back-sputtering
DE102018202421B3 (de) 2018-02-16 2019-07-11 Carl Zeiss Microscopy Gmbh Vielstrahl-Teilchenstrahlsystem
DE102018202428B3 (de) 2018-02-16 2019-05-09 Carl Zeiss Microscopy Gmbh Vielstrahl-Teilchenmikroskop
CN112055886A (zh) 2018-02-27 2020-12-08 卡尔蔡司MultiSEM有限责任公司 带电粒子多束系统及方法
US10811215B2 (en) 2018-05-21 2020-10-20 Carl Zeiss Multisem Gmbh Charged particle beam system
DE102018115012A1 (de) 2018-06-21 2019-12-24 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem
DE102018007455B4 (de) 2018-09-21 2020-07-09 Carl Zeiss Multisem Gmbh Verfahren zum Detektorabgleich bei der Abbildung von Objekten mittels eines Mehrstrahl-Teilchenmikroskops, System sowie Computerprogrammprodukt
DE102018007652B4 (de) 2018-09-27 2021-03-25 Carl Zeiss Multisem Gmbh Teilchenstrahl-System sowie Verfahren zur Stromregulierung von Einzel-Teilchenstrahlen
DE102018124044B3 (de) 2018-09-28 2020-02-06 Carl Zeiss Microscopy Gmbh Verfahren zum Betreiben eines Vielstrahl-Teilchenstrahlmikroskops und Vielstrahl-Teilchenstrahlsystem
DE102018124219A1 (de) 2018-10-01 2020-04-02 Carl Zeiss Microscopy Gmbh Vielstrahl-Teilchenstrahlsystem und Verfahren zum Betreiben eines solchen
CN111477530B (zh) 2019-01-24 2023-05-05 卡尔蔡司MultiSEM有限责任公司 利用多束粒子显微镜对3d样本成像的方法
TWI743626B (zh) 2019-01-24 2021-10-21 德商卡爾蔡司多重掃描電子顯微鏡有限公司 包含多束粒子顯微鏡的系統、對3d樣本逐層成像之方法及電腦程式產品
US11099482B2 (en) 2019-05-03 2021-08-24 Ims Nanofabrication Gmbh Adapting the duration of exposure slots in multi-beam writers
DE102019004124B4 (de) 2019-06-13 2024-03-21 Carl Zeiss Multisem Gmbh Teilchenstrahl-System zur azimutalen Ablenkung von Einzel-Teilchenstrahlen sowie seine Verwendung und Verfahren zur Azimut-Korrektur bei einem Teilchenstrahl-System
DE102019005362A1 (de) 2019-07-31 2021-02-04 Carl Zeiss Multisem Gmbh Verfahren zum Betreiben eines Vielzahl-Teilchenstrahlsystems unter Veränderung der numerischen Apertur, zugehöriges Computerprogrammprodukt und Vielzahl-Teilchenstrahlsystem
DE102019008249B3 (de) 2019-11-27 2020-11-19 Carl Zeiss Multisem Gmbh Teilchenstrahl-System mit einer Multistrahl-Ablenkeinrichtung und einem Strahlfänger, Verfahren zum Betreiben des Teilchenstrahl-Systems und zugehöriges Computerprogrammprodukt
KR20210099516A (ko) 2020-02-03 2021-08-12 아이엠에스 나노패브릭케이션 게엠베하 멀티―빔 라이터의 블러 변화 보정
JP7406642B2 (ja) 2020-02-04 2023-12-27 カール ツァイス マルチセム ゲーエムベーハー マルチビームデジタル走査及び画像取得
KR20210132599A (ko) 2020-04-24 2021-11-04 아이엠에스 나노패브릭케이션 게엠베하 대전 입자 소스
TW202220012A (zh) 2020-09-30 2022-05-16 德商卡爾蔡司多重掃描電子顯微鏡有限公司 在可調工作距離附近具快速自動對焦之多重粒子束顯微鏡及相關方法
DE102021200799B3 (de) 2021-01-29 2022-03-31 Carl Zeiss Multisem Gmbh Verfahren mit verbesserter Fokuseinstellung unter Berücksichtigung eines Bildebenenkipps in einem Vielzahl-Teilchenstrahlmikroskop
EP4095882A1 (en) 2021-05-25 2022-11-30 IMS Nanofabrication GmbH Pattern data processing for programmable direct-write apparatus
DE102021116969B3 (de) 2021-07-01 2022-09-22 Carl Zeiss Multisem Gmbh Verfahren zur bereichsweisen Probeninspektion mittels eines Vielstrahl-Teilchenmikroskopes, Computerprogrammprodukt und Vielstrahl-Teilchenmikroskop zur Halbleiterprobeninspektion
US12154756B2 (en) 2021-08-12 2024-11-26 Ims Nanofabrication Gmbh Beam pattern device having beam absorber structure

Family Cites Families (9)

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US2940020A (en) * 1952-04-08 1960-06-07 Int Standard Electric Corp Focusing magnet for long electron beams
US5177366A (en) * 1992-03-06 1993-01-05 Eaton Corporation Ion beam implanter for providing cross plane focusing
JP4947841B2 (ja) * 2000-03-31 2012-06-06 キヤノン株式会社 荷電粒子線露光装置
KR100533444B1 (ko) * 2003-07-25 2005-12-05 전자빔기술센터 주식회사 마이크로칼럼의 렌즈조립체 제조 방법 및 그 방법에 의해제작된 렌즈 조립체
JP4541798B2 (ja) 2004-08-06 2010-09-08 キヤノン株式会社 荷電粒子線レンズアレイ、及び該荷電粒子線レンズアレイを用いた荷電粒子線露光装置
US20100200766A1 (en) 2007-07-26 2010-08-12 Ho Seob Kim Electron emitter having nano-structure tip and electron column using the same
JP5419675B2 (ja) 2009-12-22 2014-02-19 三菱電機株式会社 エレベータ制御装置
JP2013004680A (ja) * 2011-06-15 2013-01-07 Canon Inc 荷電粒子線レンズ
JP2013084638A (ja) * 2011-10-05 2013-05-09 Canon Inc 静電レンズ

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015023286A (ja) * 2013-07-17 2015-02-02 アイエムエス ナノファブリケーション アーゲー 複数のブランキングアレイを有するパターン画定装置
JP2023505651A (ja) * 2020-11-10 2023-02-10 エルジー エナジー ソリューション リミテッド スイッチタイプの電力遮断装置及びそれを含むバッテリーパック
US11830697B2 (en) 2020-11-10 2023-11-28 Lg Energy Solution, Ltd. Switch-type power disconnection device and battery pack including the same
JP7428329B2 (ja) 2020-11-10 2024-02-06 エルジー エナジー ソリューション リミテッド スイッチタイプの電力遮断装置及びそれを含むバッテリーパック
JP2022188764A (ja) * 2021-06-09 2022-12-21 韓國電子通信研究院 高電圧駆動装置
US11894224B2 (en) 2021-06-09 2024-02-06 Electronics And Telecommunications Research Institute High voltage driving device
JP7458441B2 (ja) 2021-06-09 2024-03-29 韓國電子通信研究院 高電圧駆動装置

Also Published As

Publication number Publication date
WO2012172913A1 (en) 2012-12-20
US8829465B2 (en) 2014-09-09
US20140103223A1 (en) 2014-04-17

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