JP2012532511A - Rf駆動増幅器送信機における利得制御の直線性 - Google Patents
Rf駆動増幅器送信機における利得制御の直線性 Download PDFInfo
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- JP2012532511A JP2012532511A JP2012517902A JP2012517902A JP2012532511A JP 2012532511 A JP2012532511 A JP 2012532511A JP 2012517902 A JP2012517902 A JP 2012517902A JP 2012517902 A JP2012517902 A JP 2012517902A JP 2012532511 A JP2012532511 A JP 2012532511A
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- 238000004891 communication Methods 0.000 description 7
- 238000013461 design Methods 0.000 description 7
- 230000006870 function Effects 0.000 description 4
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- 238000005516 engineering process Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
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- 238000003199 nucleic acid amplification method Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
- H03G1/0029—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier using FETs
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
- H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0088—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using discontinuously variable devices, e.g. switch-operated
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
- H03F2203/7206—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch in the bias circuit of the amplifier controlling a bias voltage in the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
- H03F2203/7236—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers by (a ) switch(es)
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
- Control Of Amplification And Gain Control (AREA)
Abstract
Description
本特許出願は、2009年6月30日に出願され、本発明の譲受人に譲渡され、これによって参照により本明細書に明示的に組み込まれている、「TC DA LINEARITY IMPROVEMENT」という名称の仮出願第61/222,061号の優先権を主張するものである。
Claims (22)
- 入力信号電圧を複数の入力信号電流に変換するための複数の電圧−電流トランスデューサと、
増幅器利得制御を実現するように前記電圧−電流トランスデューサに結合され、薄ゲート酸化膜トランジスタと厚ゲート酸化膜トランジスタとを備えるカスコード段とを備える装置。 - 前記複数の電圧−電流トランスデューサが複数のトランジスタを備える、請求項1に記載の装置。
- 前記複数のトランジスタがMOSFETを備える、請求項2に記載の装置。
- 前記カスコード段の前記薄ゲート酸化膜トランジスタがMOSFETを備える、請求項1に記載の装置。
- 前記カスコード段の前記厚ゲート酸化膜トランジスタがMOSFETを備える、請求項1に記載の装置。
- 前記薄ゲート酸化膜トランジスタが前記カスコード段の最上位(MS)トランジスタを備える、請求項1に記載の装置。
- 前記カスコード段の前記薄ゲート酸化膜トランジスタおよび厚ゲート酸化膜トランジスタの電源のオフおよびオンを制御するために複数のスイッチをさらに備える、請求項6に記載の装置。
- 前記複数のスイッチを制御するためにデジタル利得制御テーブルをさらに備える、請求項7に記載の装置。
- 入力信号電圧を複数の入力信号電流に変換することと、
薄ゲート酸化膜トランジスタと厚ゲート酸化膜トランジスタとを備えるカスコード段に前記複数の入力信号電流を結合することにより増幅器利得制御を実現することとを備える方法。 - 前記カスコード段の前記薄ゲート酸化膜トランジスタがMOSFETを備える、請求項9に記載の方法。
- 前記カスコード段の前記厚ゲート酸化膜トランジスタがMOSFETを備える、請求項9に記載の方法。
- 前記薄ゲート酸化膜トランジスタが前記カスコード段の前記最上位(MS)トランジスタを備える、請求項9に記載の方法。
- 複数のスイッチによって前記薄ゲート酸化膜トランジスタおよび厚ゲート酸化膜トランジスタの電源のオフまたはオンを制御することをさらに備える、請求項12に記載の方法。
- デジタル利得制御テーブルが前記複数のスイッチを制御するために使用される、請求項13に記載の方法。
- 入力信号電圧を複数の入力信号電流に変換する手段と、
薄ゲート酸化膜トランジスタと厚ゲート酸化膜トランジスタとを備え、前記複数の入力信号電流に増幅器利得制御を実現する手段とを備える装置。 - 前記入力信号電圧を前記複数の入力信号電流に変換する前記手段が複数のトランジスタを備える、請求項15に記載の装置。
- 前記複数のトランジスタがMOSFETである、請求項16に記載の装置。
- 前記複数の入力信号電流に増幅器利得制御を実現する前記手段がカスコード段を備える、請求項15に記載の装置。
- 前記カスコード段の前記薄ゲート酸化膜トランジスタがMOSFETを備える、請求項18に記載の装置。
- 前記カスコード段の前記厚ゲート酸化膜トランジスタがMOSFETを備える、請求項18に記載の装置。
- 前記薄ゲート酸化膜トランジスタが前記カスコード段の前記最上位(MS)トランジスタを備える、請求項18に記載の装置。
- 前記カスコード段の前記薄ゲート酸化膜トランジスタおよび厚ゲート酸化膜トランジスタの電源のオフまたはオンを制御する手段をさらに備える、請求項21に記載の装置。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US22206109P | 2009-06-30 | 2009-06-30 | |
US61/222,061 | 2009-06-30 | ||
US12/636,637 US8330547B2 (en) | 2009-06-30 | 2009-12-11 | Gain control linearity in an RF driver amplifier transmitter |
US12/636,637 | 2009-12-11 | ||
PCT/US2010/040682 WO2011002942A1 (en) | 2009-06-30 | 2010-06-30 | Gain control linearity in an rf driver amplifier transmitter |
Publications (2)
Publication Number | Publication Date |
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JP2012532511A true JP2012532511A (ja) | 2012-12-13 |
JP5475126B2 JP5475126B2 (ja) | 2014-04-16 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012517902A Expired - Fee Related JP5475126B2 (ja) | 2009-06-30 | 2010-06-30 | Rf駆動増幅器送信機における利得制御の直線性 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8330547B2 (ja) |
EP (1) | EP2449675B1 (ja) |
JP (1) | JP5475126B2 (ja) |
CN (1) | CN102460965B (ja) |
WO (1) | WO2011002942A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101862708B1 (ko) * | 2011-12-28 | 2018-05-31 | 삼성전자주식회사 | 무선송신기에서 구동증폭기 이득을 지수적으로 제어하기 위한 장치 및 방법 |
US9294056B2 (en) | 2013-03-12 | 2016-03-22 | Peregrine Semiconductor Corporation | Scalable periphery tunable matching power amplifier |
US9276527B2 (en) * | 2013-09-30 | 2016-03-01 | Peregrine Semiconductor Corporation | Methods and devices for impedance matching in power amplifier circuits |
US9331643B2 (en) | 2013-09-30 | 2016-05-03 | Peregrine Semiconductor Corporation | Methods and devices for thermal control in power amplifier circuits |
US9231529B2 (en) * | 2013-12-16 | 2016-01-05 | Motorola Solutions, Inc. | Switchable multi-output low-noise amplifier with distortion cancellation |
US9887673B2 (en) | 2016-03-11 | 2018-02-06 | Intel Corporation | Ultra compact multi-band transmitter with robust AM-PM distortion self-suppression techniques |
US10476460B2 (en) * | 2016-08-30 | 2019-11-12 | Skyworks Solutions, Inc. | Low-noise amplifier having programmable-phase gain stage |
US11881828B2 (en) | 2017-04-04 | 2024-01-23 | Psemi Corporation | Tunable effective inductance for multi-gain LNA with inductive source degeneration |
US10038418B1 (en) * | 2017-04-04 | 2018-07-31 | Psemi Corporation | Optimized multi gain LNA enabling low current and high linearity including highly linear active bypass |
CN109412537B (zh) | 2017-08-15 | 2022-10-14 | 诺基亚通信公司 | 低噪声放大器保护 |
US11606067B2 (en) * | 2021-03-01 | 2023-03-14 | Psemi Corporation | Dual voltage switched branch LNA architecture |
Citations (6)
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JPH06132746A (ja) * | 1992-10-20 | 1994-05-13 | Sharp Corp | 電力増幅器 |
JPH11298260A (ja) * | 1998-04-09 | 1999-10-29 | Nec Corp | 電力増幅器 |
JP2002261169A (ja) * | 2001-02-20 | 2002-09-13 | Programmable Silicon Solutions | 高性能な無線周波数の集積回路デバイス |
JP2002544737A (ja) * | 1999-05-13 | 2002-12-24 | ハネウェル・インコーポレーテッド | 独立に制御可能な電流ミラー・レッグを備える出力バッファ |
US20060119435A1 (en) * | 2004-12-02 | 2006-06-08 | Hyoung-Seok Oh | Triple cascode power amplifier of inner parallel configuration with dynamic gate bias technique |
JP2007221402A (ja) * | 2006-02-16 | 2007-08-30 | Fujitsu Ltd | 可変利得増幅器及びその半導体集積装置 |
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JP2848500B2 (ja) * | 1991-04-04 | 1999-01-20 | 三菱電機株式会社 | インタフェースシステム |
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-
2009
- 2009-12-11 US US12/636,637 patent/US8330547B2/en active Active
-
2010
- 2010-06-30 WO PCT/US2010/040682 patent/WO2011002942A1/en active Application Filing
- 2010-06-30 CN CN201080029004.2A patent/CN102460965B/zh not_active Expired - Fee Related
- 2010-06-30 EP EP10731683.8A patent/EP2449675B1/en not_active Not-in-force
- 2010-06-30 JP JP2012517902A patent/JP5475126B2/ja not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06132746A (ja) * | 1992-10-20 | 1994-05-13 | Sharp Corp | 電力増幅器 |
JPH11298260A (ja) * | 1998-04-09 | 1999-10-29 | Nec Corp | 電力増幅器 |
JP2002544737A (ja) * | 1999-05-13 | 2002-12-24 | ハネウェル・インコーポレーテッド | 独立に制御可能な電流ミラー・レッグを備える出力バッファ |
JP2002261169A (ja) * | 2001-02-20 | 2002-09-13 | Programmable Silicon Solutions | 高性能な無線周波数の集積回路デバイス |
US20060119435A1 (en) * | 2004-12-02 | 2006-06-08 | Hyoung-Seok Oh | Triple cascode power amplifier of inner parallel configuration with dynamic gate bias technique |
JP2007221402A (ja) * | 2006-02-16 | 2007-08-30 | Fujitsu Ltd | 可変利得増幅器及びその半導体集積装置 |
Also Published As
Publication number | Publication date |
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EP2449675B1 (en) | 2018-03-07 |
CN102460965A (zh) | 2012-05-16 |
US20100327977A1 (en) | 2010-12-30 |
WO2011002942A1 (en) | 2011-01-06 |
US8330547B2 (en) | 2012-12-11 |
EP2449675A1 (en) | 2012-05-09 |
CN102460965B (zh) | 2016-09-14 |
JP5475126B2 (ja) | 2014-04-16 |
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