JP2012529163A5 - - Google Patents

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Publication number
JP2012529163A5
JP2012529163A5 JP2012513486A JP2012513486A JP2012529163A5 JP 2012529163 A5 JP2012529163 A5 JP 2012529163A5 JP 2012513486 A JP2012513486 A JP 2012513486A JP 2012513486 A JP2012513486 A JP 2012513486A JP 2012529163 A5 JP2012529163 A5 JP 2012529163A5
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JP
Japan
Prior art keywords
salts
fluoride
amines
polymeric
polyallylamine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012513486A
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English (en)
Japanese (ja)
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JP2012529163A (ja
JP5801798B2 (ja
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Publication date
Application filed filed Critical
Priority claimed from PCT/EP2010/002949 external-priority patent/WO2010139390A1/en
Publication of JP2012529163A publication Critical patent/JP2012529163A/ja
Publication of JP2012529163A5 publication Critical patent/JP2012529163A5/ja
Application granted granted Critical
Publication of JP5801798B2 publication Critical patent/JP5801798B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012513486A 2009-06-04 2010-05-12 二成分エッチング Expired - Fee Related JP5801798B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP09007411 2009-06-04
EP09007411.3 2009-06-04
PCT/EP2010/002949 WO2010139390A1 (en) 2009-06-04 2010-05-12 Two component etching

Publications (3)

Publication Number Publication Date
JP2012529163A JP2012529163A (ja) 2012-11-15
JP2012529163A5 true JP2012529163A5 (https=) 2015-08-20
JP5801798B2 JP5801798B2 (ja) 2015-10-28

Family

ID=42830717

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012513486A Expired - Fee Related JP5801798B2 (ja) 2009-06-04 2010-05-12 二成分エッチング

Country Status (8)

Country Link
US (1) US8647526B2 (https=)
EP (1) EP2438140A1 (https=)
JP (1) JP5801798B2 (https=)
KR (1) KR20120036939A (https=)
CN (1) CN102449112B (https=)
SG (1) SG176274A1 (https=)
TW (1) TWI481693B (https=)
WO (1) WO2010139390A1 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013008877A (ja) * 2011-06-24 2013-01-10 Kuraray Co Ltd カーボンナノチューブ層とオーバーコート層とを具備する複合層のパターン形成方法、及び前記方法で形成されたパターン
CN102929418A (zh) * 2011-08-09 2013-02-13 群康科技(深圳)有限公司 装饰膜、影像显示系统及触控感测装置的制造方法
TWI495560B (zh) * 2011-08-09 2015-08-11 Chimei Innolux Corp 透明基底上的裝飾膜、影像顯示系統及觸控感測裝置之製造方法
JP5850939B2 (ja) * 2011-08-12 2016-02-03 国立大学法人大阪大学 エッチング方法及び太陽電池用固体材料の表面加工方法
JP2014082330A (ja) * 2012-10-16 2014-05-08 Hitachi Chemical Co Ltd SiN膜の除去方法
JP6011234B2 (ja) * 2012-10-16 2016-10-19 日立化成株式会社 組成物
JP6136186B2 (ja) * 2012-10-16 2017-05-31 日立化成株式会社 液状組成物
JP6060611B2 (ja) * 2012-10-16 2017-01-18 日立化成株式会社 組成物
US9550940B2 (en) 2012-10-16 2017-01-24 Hitachi Chemical Company, Ltd. Etching material
CN104854684B (zh) 2012-11-14 2017-10-10 太阳化学公司 用于制造背面钝化太阳能电池的组合物和方法
WO2014192266A1 (ja) * 2013-05-31 2014-12-04 日立化成株式会社 エッチング組成物
CN104993019A (zh) * 2015-07-09 2015-10-21 苏州阿特斯阳光电力科技有限公司 一种局部背接触太阳能电池的制备方法
TWI550886B (zh) * 2015-07-10 2016-09-21 國立屏東科技大學 矽基板表面粗糙化方法
JP2016086187A (ja) * 2016-02-01 2016-05-19 日立化成株式会社 SiN膜の除去方法
JP7603517B2 (ja) * 2021-04-26 2024-12-20 株式会社Screenホールディングス 基板処理方法、および、基板処理装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3979241A (en) * 1968-12-28 1976-09-07 Fujitsu Ltd. Method of etching films of silicon nitride and silicon dioxide
US4781792A (en) * 1985-05-07 1988-11-01 Hogan James V Method for permanently marking glass
GB9210514D0 (en) * 1992-05-16 1992-07-01 Micro Image Technology Ltd Etching compositions
WO1997002958A1 (en) * 1995-07-10 1997-01-30 Advanced Chemical Systems International Organic amine/hydrogen fluoride etchant composition and method
US5698503A (en) 1996-11-08 1997-12-16 Ashland Inc. Stripping and cleaning composition
DE19962136A1 (de) * 1999-12-22 2001-06-28 Merck Patent Gmbh Verfahren zur Rauhätzung von Siliziumsolarzellen
AU4251001A (en) * 2000-04-28 2001-11-12 Merck Patent Gmbh Etching pastes for inorganic surfaces
EP1295320A2 (en) * 2000-06-30 2003-03-26 MEMC Electronic Materials, Inc. Process for etching silicon wafers
GB2367788A (en) * 2000-10-16 2002-04-17 Seiko Epson Corp Etching using an ink jet print head
DE10241300A1 (de) * 2002-09-04 2004-03-18 Merck Patent Gmbh Ätzpasten für Siliziumoberflächen und -schichten
US20040188385A1 (en) * 2003-03-26 2004-09-30 Kenji Yamada Etching agent composition for thin films having high permittivity and process for etching
AU2003901559A0 (en) 2003-04-07 2003-05-01 Unisearch Limited Glass texturing method
KR101073417B1 (ko) * 2003-10-14 2011-10-17 가부시키가이샤 아데카 포토 레지스트 조성물
EP1720834A1 (en) * 2004-03-05 2006-11-15 Honeywell International, Inc. Ionic liquids of heterocyclic amines
DE102005007743A1 (de) * 2005-01-11 2006-07-20 Merck Patent Gmbh Druckfähiges Medium zur Ätzung von Siliziumdioxid- und Siliziumnitridschichten
DE102005033724A1 (de) * 2005-07-15 2007-01-18 Merck Patent Gmbh Druckfähige Ätzmedien für Siliziumdioxid-und Siliziumnitridschichten
GB0608463D0 (en) * 2006-04-27 2006-06-07 Sericol Ltd A printing ink
ATE469199T1 (de) * 2006-10-31 2010-06-15 Soitec Silicon On Insulator Verfahren zur charakterisierung von defekten auf silizium-oberflächen, ätzlösung für silizium- oberflächen und verfahren zur behandlung von silizium-oberflächen mit der ätzlösung
US7582398B2 (en) * 2007-06-13 2009-09-01 Xerox Corporation Inkless reimageable printing paper and method
JP4947654B2 (ja) * 2007-09-28 2012-06-06 シャープ株式会社 誘電体膜のパターニング方法

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