JP2012528242A5 - - Google Patents

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Publication number
JP2012528242A5
JP2012528242A5 JP2012511305A JP2012511305A JP2012528242A5 JP 2012528242 A5 JP2012528242 A5 JP 2012528242A5 JP 2012511305 A JP2012511305 A JP 2012511305A JP 2012511305 A JP2012511305 A JP 2012511305A JP 2012528242 A5 JP2012528242 A5 JP 2012528242A5
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JP
Japan
Prior art keywords
electrode
substrate
plasma
gas
transport direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012511305A
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English (en)
Japanese (ja)
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JP2012528242A (ja
JP5659225B2 (ja
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Publication date
Priority claimed from EP09161034.5A external-priority patent/EP2256782B1/en
Application filed filed Critical
Publication of JP2012528242A publication Critical patent/JP2012528242A/ja
Publication of JP2012528242A5 publication Critical patent/JP2012528242A5/ja
Application granted granted Critical
Publication of JP5659225B2 publication Critical patent/JP5659225B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012511305A 2009-05-25 2010-05-25 プラズマ堆積ソースおよび薄膜を堆積させるための方法 Expired - Fee Related JP5659225B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP09161034.5 2009-05-25
EP09161034.5A EP2256782B1 (en) 2009-05-25 2009-05-25 Plasma deposition source and method for depositing thin films
PCT/EP2010/057181 WO2010136464A1 (en) 2009-05-25 2010-05-25 Plasma deposition source and method for depositing thin films

Publications (3)

Publication Number Publication Date
JP2012528242A JP2012528242A (ja) 2012-11-12
JP2012528242A5 true JP2012528242A5 (enExample) 2013-07-11
JP5659225B2 JP5659225B2 (ja) 2015-01-28

Family

ID=41110602

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012511305A Expired - Fee Related JP5659225B2 (ja) 2009-05-25 2010-05-25 プラズマ堆積ソースおよび薄膜を堆積させるための方法

Country Status (7)

Country Link
US (1) US20100297361A1 (enExample)
EP (1) EP2256782B1 (enExample)
JP (1) JP5659225B2 (enExample)
KR (1) KR101698446B1 (enExample)
CN (1) CN102449726B (enExample)
TW (1) TWI590715B (enExample)
WO (1) WO2010136464A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2781775T3 (es) 2012-11-02 2020-09-07 Agc Inc Fuente de plasma para un aparato de CVD de plasma y un procedimiento de fabricación de un artículo por el uso de la fuente de plasma
KR101464939B1 (ko) * 2013-02-21 2014-11-25 주식회사 테스 박막증착장치
US9738976B2 (en) * 2013-02-27 2017-08-22 Ioxus, Inc. Energy storage device assembly
KR102244070B1 (ko) * 2014-01-07 2021-04-26 삼성디스플레이 주식회사 기상 증착 장치, 기상 증착 방법 및 유기 발광 표시 장치 제조 방법
CN109659217A (zh) * 2018-12-18 2019-04-19 沈阳拓荆科技有限公司 用于多等离子处理腔的射频系统
WO2020257965A1 (en) * 2019-06-24 2020-12-30 Trumpf Huettinger (Shanghai) Co., Ltd. Method of adjusting the output power of a power supply supplying electrical power to a plasma, plasma apparatus and power supply
EP3761341A1 (en) * 2019-07-03 2021-01-06 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk Onderzoek TNO Spatially controlled plasma delivery apparatus
CN114836736A (zh) * 2021-02-01 2022-08-02 江苏菲沃泰纳米科技股份有限公司 等离子体镀膜设备和镀膜方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06101459B2 (ja) * 1985-05-09 1994-12-12 松下電器産業株式会社 プラズマ気相成長装置
US5180434A (en) * 1991-03-11 1993-01-19 United Solar Systems Corporation Interfacial plasma bars for photovoltaic deposition apparatus
US6022414A (en) * 1994-07-18 2000-02-08 Semiconductor Equipment Group, Llc Single body injector and method for delivering gases to a surface
JPH0867986A (ja) * 1994-08-29 1996-03-12 Canon Inc 大面積機能性堆積膜の連続的形成方法及び形成装置
WO1997022136A1 (de) * 1995-12-08 1997-06-19 Balzers Aktiengesellschaft Hf-plasmabehandlungskammer bzw. pecvd-beschichtungskammer, deren verwendungen und verfahren zur beschichtung von speicherplatten
JPH11246971A (ja) 1998-03-03 1999-09-14 Canon Inc 微結晶シリコン系薄膜の作製方法及び作製装置
JP3332857B2 (ja) * 1998-04-15 2002-10-07 三菱重工業株式会社 高周波プラズマ発生装置及び給電方法
JP2001049440A (ja) * 1999-08-13 2001-02-20 Mitsubishi Heavy Ind Ltd プラズマｃｖｄ製膜方法及びプラズマｃｖｄ製膜装置
US6849306B2 (en) * 2001-08-23 2005-02-01 Konica Corporation Plasma treatment method at atmospheric pressure
US20070154650A1 (en) * 2005-12-30 2007-07-05 Atomic Energy Council - Institute Of Nuclear Energy Research Method and apparatus for glow discharge plasma treatment of flexible material at atmospheric pressure
US7501305B2 (en) * 2006-10-23 2009-03-10 Canon Kabushiki Kaisha Method for forming deposited film and photovoltaic element
JP6101459B2 (ja) * 2012-09-13 2017-03-22 日本エラストマー株式会社 変性共役ジエン系重合体、変性共役ジエン系重合体組成物及びその製造方法

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