KR101698446B1 - 플라즈마 증착 소스 및 박막들을 증착하기 위한 방법 - Google Patents

플라즈마 증착 소스 및 박막들을 증착하기 위한 방법 Download PDF

Info

Publication number
KR101698446B1
KR101698446B1 KR1020117030911A KR20117030911A KR101698446B1 KR 101698446 B1 KR101698446 B1 KR 101698446B1 KR 1020117030911 A KR1020117030911 A KR 1020117030911A KR 20117030911 A KR20117030911 A KR 20117030911A KR 101698446 B1 KR101698446 B1 KR 101698446B1
Authority
KR
South Korea
Prior art keywords
electrode
plasma
substrate
gas
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020117030911A
Other languages
English (en)
Korean (ko)
Other versions
KR20120030453A (ko
Inventor
네일 모리슨
안드레 헤어초크
슈테판 하인
페터 스쿠크
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20120030453A publication Critical patent/KR20120030453A/ko
Application granted granted Critical
Publication of KR101698446B1 publication Critical patent/KR101698446B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/3277—Continuous moving of continuous material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
KR1020117030911A 2009-05-25 2010-05-25 플라즈마 증착 소스 및 박막들을 증착하기 위한 방법 Expired - Fee Related KR101698446B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP09161034.5A EP2256782B1 (en) 2009-05-25 2009-05-25 Plasma deposition source and method for depositing thin films
EP09161034.5 2009-05-25
PCT/EP2010/057181 WO2010136464A1 (en) 2009-05-25 2010-05-25 Plasma deposition source and method for depositing thin films

Publications (2)

Publication Number Publication Date
KR20120030453A KR20120030453A (ko) 2012-03-28
KR101698446B1 true KR101698446B1 (ko) 2017-01-20

Family

ID=41110602

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117030911A Expired - Fee Related KR101698446B1 (ko) 2009-05-25 2010-05-25 플라즈마 증착 소스 및 박막들을 증착하기 위한 방법

Country Status (7)

Country Link
US (1) US20100297361A1 (enExample)
EP (1) EP2256782B1 (enExample)
JP (1) JP5659225B2 (enExample)
KR (1) KR101698446B1 (enExample)
CN (1) CN102449726B (enExample)
TW (1) TWI590715B (enExample)
WO (1) WO2010136464A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2915902B1 (en) * 2012-11-02 2020-02-19 AGC Inc. Plasma source for a plasma cvd apparatus and a manufacturing method of an article using the plasma source
KR101464939B1 (ko) * 2013-02-21 2014-11-25 주식회사 테스 박막증착장치
US9738976B2 (en) * 2013-02-27 2017-08-22 Ioxus, Inc. Energy storage device assembly
KR102244070B1 (ko) * 2014-01-07 2021-04-26 삼성디스플레이 주식회사 기상 증착 장치, 기상 증착 방법 및 유기 발광 표시 장치 제조 방법
CN109659217A (zh) * 2018-12-18 2019-04-19 沈阳拓荆科技有限公司 用于多等离子处理腔的射频系统
WO2020257965A1 (en) * 2019-06-24 2020-12-30 Trumpf Huettinger (Shanghai) Co., Ltd. Method of adjusting the output power of a power supply supplying electrical power to a plasma, plasma apparatus and power supply
EP3761341A1 (en) * 2019-07-03 2021-01-06 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk Onderzoek TNO Spatially controlled plasma delivery apparatus
CN114836736A (zh) * 2021-02-01 2022-08-02 江苏菲沃泰纳米科技股份有限公司 等离子体镀膜设备和镀膜方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992015722A1 (en) * 1991-03-11 1992-09-17 United Solar Systems Corporation Interfacial plasma bars for photovoltaic deposition apparatus

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06101459B2 (ja) * 1985-05-09 1994-12-12 松下電器産業株式会社 プラズマ気相成長装置
US6022414A (en) * 1994-07-18 2000-02-08 Semiconductor Equipment Group, Llc Single body injector and method for delivering gases to a surface
JPH0867986A (ja) * 1994-08-29 1996-03-12 Canon Inc 大面積機能性堆積膜の連続的形成方法及び形成装置
WO1997022136A1 (de) * 1995-12-08 1997-06-19 Balzers Aktiengesellschaft Hf-plasmabehandlungskammer bzw. pecvd-beschichtungskammer, deren verwendungen und verfahren zur beschichtung von speicherplatten
JPH11246971A (ja) * 1998-03-03 1999-09-14 Canon Inc 微結晶シリコン系薄膜の作製方法及び作製装置
JP3332857B2 (ja) * 1998-04-15 2002-10-07 三菱重工業株式会社 高周波プラズマ発生装置及び給電方法
JP2001049440A (ja) * 1999-08-13 2001-02-20 Mitsubishi Heavy Ind Ltd プラズマｃｖｄ製膜方法及びプラズマｃｖｄ製膜装置
US6849306B2 (en) * 2001-08-23 2005-02-01 Konica Corporation Plasma treatment method at atmospheric pressure
US20070154650A1 (en) * 2005-12-30 2007-07-05 Atomic Energy Council - Institute Of Nuclear Energy Research Method and apparatus for glow discharge plasma treatment of flexible material at atmospheric pressure
US7501305B2 (en) * 2006-10-23 2009-03-10 Canon Kabushiki Kaisha Method for forming deposited film and photovoltaic element
JP6101459B2 (ja) * 2012-09-13 2017-03-22 日本エラストマー株式会社 変性共役ジエン系重合体、変性共役ジエン系重合体組成物及びその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992015722A1 (en) * 1991-03-11 1992-09-17 United Solar Systems Corporation Interfacial plasma bars for photovoltaic deposition apparatus

Also Published As

Publication number Publication date
CN102449726B (zh) 2016-08-03
TW201106807A (en) 2011-02-16
JP2012528242A (ja) 2012-11-12
CN102449726A (zh) 2012-05-09
TWI590715B (zh) 2017-07-01
KR20120030453A (ko) 2012-03-28
EP2256782A1 (en) 2010-12-01
EP2256782B1 (en) 2018-08-29
US20100297361A1 (en) 2010-11-25
JP5659225B2 (ja) 2015-01-28
WO2010136464A1 (en) 2010-12-02

Similar Documents

Publication Publication Date Title
KR101698446B1 (ko) 플라즈마 증착 소스 및 박막들을 증착하기 위한 방법
KR102032542B1 (ko) 가요성 기판들을 위한 증착 플랫폼 및 그 작동 방법
US20140314965A1 (en) Apparatus and method for dielectric deposition
CN1274395A (zh) 用于沉积薄膜的双频等离子激发
CN103597119A (zh) 用于等离子体处理的装置和方法
CN103229272A (zh) 等离子体加工装置
JP5378416B2 (ja) プラズマ処理装置
JP4408821B2 (ja) プラズマ処理装置
EP3811395A1 (en) Plasma source and method of operating the same
JP4273382B2 (ja) プラズマ処理装置と薄膜形成方法
JP2011155308A (ja) プラズマｃｖｄ装置及びプラズマｃｖｄ装置を用いたシリコン系膜の製造方法
KR101372040B1 (ko) Ｃｖｄ 균일 흡출/펌핑 안내 구조
JP4937322B2 (ja) プラズマ処理装置
JP2007266094A (ja) プラズマｃｖｄ装置及びプラズマｃｖｄによる半導体薄膜の成膜方法
JP2012507133A (ja) 基板上にプロセシングされる材料の均一性を改善する堆積装置及びこれを使用する方法
JP4949695B2 (ja) 光電変換装置の製造装置および光電変換装置の製造方法
JP2006100551A (ja) プラズマ製膜方法、プラズマ処理装置、太陽電池及び太陽電池の製造方法
KR101534024B1 (ko) 기판처리장치
JP2011146745A (ja) プラズマｃｖｄ装置及びプラズマｃｖｄ装置を用いたシリコン系膜の製造方法
JP4912476B2 (ja) プラズマ処理装置
JP4937384B2 (ja) プラズマ処理装置
CA2553122A1 (en) Plasma enhanced chemical vapor deposition apparatus and method
KR20070053317A (ko) 플라즈마 강화 화학 기상 성장 장치 및 방법
KR101582212B1 (ko) 기판처리장치
JP2010287898A (ja) プラズマ製膜方法及び太陽電池の製造方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20200117

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20200117