KR101698446B1 - 플라즈마 증착 소스 및 박막들을 증착하기 위한 방법 - Google Patents

플라즈마 증착 소스 및 박막들을 증착하기 위한 방법 Download PDF

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Publication number
KR101698446B1
KR101698446B1 KR1020117030911A KR20117030911A KR101698446B1 KR 101698446 B1 KR101698446 B1 KR 101698446B1 KR 1020117030911 A KR1020117030911 A KR 1020117030911A KR 20117030911 A KR20117030911 A KR 20117030911A KR 101698446 B1 KR101698446 B1 KR 101698446B1
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KR
South Korea
Prior art keywords
electrode
plasma
substrate
gas
deposition
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English (en)
Korean (ko)
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KR20120030453A (ko
Inventor
네일 모리슨
안드레 헤어초크
슈테판 하인
페터 스쿠크
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어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR20120030453A publication Critical patent/KR20120030453A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/3277—Continuous moving of continuous material

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
KR1020117030911A 2009-05-25 2010-05-25 플라즈마 증착 소스 및 박막들을 증착하기 위한 방법 Expired - Fee Related KR101698446B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP09161034.5 2009-05-25
EP09161034.5A EP2256782B1 (en) 2009-05-25 2009-05-25 Plasma deposition source and method for depositing thin films
PCT/EP2010/057181 WO2010136464A1 (en) 2009-05-25 2010-05-25 Plasma deposition source and method for depositing thin films

Publications (2)

Publication Number Publication Date
KR20120030453A KR20120030453A (ko) 2012-03-28
KR101698446B1 true KR101698446B1 (ko) 2017-01-20

Family

ID=41110602

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117030911A Expired - Fee Related KR101698446B1 (ko) 2009-05-25 2010-05-25 플라즈마 증착 소스 및 박막들을 증착하기 위한 방법

Country Status (7)

Country Link
US (1) US20100297361A1 (enExample)
EP (1) EP2256782B1 (enExample)
JP (1) JP5659225B2 (enExample)
KR (1) KR101698446B1 (enExample)
CN (1) CN102449726B (enExample)
TW (1) TWI590715B (enExample)
WO (1) WO2010136464A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2781775T3 (es) 2012-11-02 2020-09-07 Agc Inc Fuente de plasma para un aparato de CVD de plasma y un procedimiento de fabricación de un artículo por el uso de la fuente de plasma
KR101464939B1 (ko) * 2013-02-21 2014-11-25 주식회사 테스 박막증착장치
US9738976B2 (en) * 2013-02-27 2017-08-22 Ioxus, Inc. Energy storage device assembly
KR102244070B1 (ko) * 2014-01-07 2021-04-26 삼성디스플레이 주식회사 기상 증착 장치, 기상 증착 방법 및 유기 발광 표시 장치 제조 방법
CN109659217A (zh) * 2018-12-18 2019-04-19 沈阳拓荆科技有限公司 用于多等离子处理腔的射频系统
WO2020257965A1 (en) * 2019-06-24 2020-12-30 Trumpf Huettinger (Shanghai) Co., Ltd. Method of adjusting the output power of a power supply supplying electrical power to a plasma, plasma apparatus and power supply
EP3761341A1 (en) * 2019-07-03 2021-01-06 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk Onderzoek TNO Spatially controlled plasma delivery apparatus
CN114836736A (zh) * 2021-02-01 2022-08-02 江苏菲沃泰纳米科技股份有限公司 等离子体镀膜设备和镀膜方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992015722A1 (en) * 1991-03-11 1992-09-17 United Solar Systems Corporation Interfacial plasma bars for photovoltaic deposition apparatus

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06101459B2 (ja) * 1985-05-09 1994-12-12 松下電器産業株式会社 プラズマ気相成長装置
US6022414A (en) * 1994-07-18 2000-02-08 Semiconductor Equipment Group, Llc Single body injector and method for delivering gases to a surface
JPH0867986A (ja) * 1994-08-29 1996-03-12 Canon Inc 大面積機能性堆積膜の連続的形成方法及び形成装置
WO1997022136A1 (de) * 1995-12-08 1997-06-19 Balzers Aktiengesellschaft Hf-plasmabehandlungskammer bzw. pecvd-beschichtungskammer, deren verwendungen und verfahren zur beschichtung von speicherplatten
JPH11246971A (ja) 1998-03-03 1999-09-14 Canon Inc 微結晶シリコン系薄膜の作製方法及び作製装置
JP3332857B2 (ja) * 1998-04-15 2002-10-07 三菱重工業株式会社 高周波プラズマ発生装置及び給電方法
JP2001049440A (ja) * 1999-08-13 2001-02-20 Mitsubishi Heavy Ind Ltd プラズマcvd製膜方法及びプラズマcvd製膜装置
US6849306B2 (en) * 2001-08-23 2005-02-01 Konica Corporation Plasma treatment method at atmospheric pressure
US20070154650A1 (en) * 2005-12-30 2007-07-05 Atomic Energy Council - Institute Of Nuclear Energy Research Method and apparatus for glow discharge plasma treatment of flexible material at atmospheric pressure
US7501305B2 (en) * 2006-10-23 2009-03-10 Canon Kabushiki Kaisha Method for forming deposited film and photovoltaic element
JP6101459B2 (ja) * 2012-09-13 2017-03-22 日本エラストマー株式会社 変性共役ジエン系重合体、変性共役ジエン系重合体組成物及びその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992015722A1 (en) * 1991-03-11 1992-09-17 United Solar Systems Corporation Interfacial plasma bars for photovoltaic deposition apparatus

Also Published As

Publication number Publication date
KR20120030453A (ko) 2012-03-28
JP2012528242A (ja) 2012-11-12
CN102449726B (zh) 2016-08-03
TWI590715B (zh) 2017-07-01
EP2256782A1 (en) 2010-12-01
TW201106807A (en) 2011-02-16
EP2256782B1 (en) 2018-08-29
CN102449726A (zh) 2012-05-09
WO2010136464A1 (en) 2010-12-02
US20100297361A1 (en) 2010-11-25
JP5659225B2 (ja) 2015-01-28

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