CN102449726B - 等离子体沉积源和用于沉积薄膜的方法 - Google Patents

等离子体沉积源和用于沉积薄膜的方法 Download PDF

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Publication number
CN102449726B
CN102449726B CN201080023248.XA CN201080023248A CN102449726B CN 102449726 B CN102449726 B CN 102449726B CN 201080023248 A CN201080023248 A CN 201080023248A CN 102449726 B CN102449726 B CN 102449726B
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CN
China
Prior art keywords
electrode
plasma
substrate
gas
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN201080023248.XA
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English (en)
Chinese (zh)
Other versions
CN102449726A (zh
Inventor
尼尔·莫里森
安德烈·赫佐格
斯特凡·海因
彼得·斯库克
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Applied Materials Inc
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Applied Materials Inc
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Publication date
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Publication of CN102449726A publication Critical patent/CN102449726A/zh
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Publication of CN102449726B publication Critical patent/CN102449726B/zh
Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/3277—Continuous moving of continuous material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
CN201080023248.XA 2009-05-25 2010-05-25 等离子体沉积源和用于沉积薄膜的方法 Expired - Fee Related CN102449726B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP09161034.5 2009-05-25
EP09161034.5A EP2256782B1 (en) 2009-05-25 2009-05-25 Plasma deposition source and method for depositing thin films
PCT/EP2010/057181 WO2010136464A1 (en) 2009-05-25 2010-05-25 Plasma deposition source and method for depositing thin films

Publications (2)

Publication Number Publication Date
CN102449726A CN102449726A (zh) 2012-05-09
CN102449726B true CN102449726B (zh) 2016-08-03

Family

ID=41110602

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080023248.XA Expired - Fee Related CN102449726B (zh) 2009-05-25 2010-05-25 等离子体沉积源和用于沉积薄膜的方法

Country Status (7)

Country Link
US (1) US20100297361A1 (enExample)
EP (1) EP2256782B1 (enExample)
JP (1) JP5659225B2 (enExample)
KR (1) KR101698446B1 (enExample)
CN (1) CN102449726B (enExample)
TW (1) TWI590715B (enExample)
WO (1) WO2010136464A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
HUE049078T2 (hu) 2012-11-02 2020-09-28 Agc Inc Plazmaforrás plazma CVD berendezéshez, valamint eljárás árucikknek a plazmaforrás használatával történõ gyártására
KR101464939B1 (ko) * 2013-02-21 2014-11-25 주식회사 테스 박막증착장치
US9738976B2 (en) * 2013-02-27 2017-08-22 Ioxus, Inc. Energy storage device assembly
KR102244070B1 (ko) * 2014-01-07 2021-04-26 삼성디스플레이 주식회사 기상 증착 장치, 기상 증착 방법 및 유기 발광 표시 장치 제조 방법
CN109659217A (zh) * 2018-12-18 2019-04-19 沈阳拓荆科技有限公司 用于多等离子处理腔的射频系统
KR102745560B1 (ko) * 2019-06-24 2024-12-20 트럼프 휴팅거 에스피 제트 오.오. 플라즈마에 전력을 공급하는 전력 공급부의 출력 전력을 조정하는 방법, 플라즈마 장치 및 전력 공급부
EP3761341A1 (en) * 2019-07-03 2021-01-06 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk Onderzoek TNO Spatially controlled plasma delivery apparatus
CN114836736A (zh) * 2021-02-01 2022-08-02 江苏菲沃泰纳米科技股份有限公司 等离子体镀膜设备和镀膜方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5180434A (en) * 1991-03-11 1993-01-19 United Solar Systems Corporation Interfacial plasma bars for photovoltaic deposition apparatus
US6432492B2 (en) * 1995-12-08 2002-08-13 Unaxis Balzers Aktiengesellschaft HF-Plasma coating chamber or PECVD coating chamber, its use and method of plating CDs using the chamber
EP1286382A2 (en) * 2001-08-23 2003-02-26 Konica Corporation Atmospheric pressure plasma treatment apparatus and method
CN1147007C (zh) * 1998-03-03 2004-04-21 佳能株式会社 形成微晶硅系列薄膜的工艺和适于实施所述工艺的装置
JP6101459B2 (ja) * 2012-09-13 2017-03-22 日本エラストマー株式会社 変性共役ジエン系重合体、変性共役ジエン系重合体組成物及びその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06101459B2 (ja) * 1985-05-09 1994-12-12 松下電器産業株式会社 プラズマ気相成長装置
US6022414A (en) * 1994-07-18 2000-02-08 Semiconductor Equipment Group, Llc Single body injector and method for delivering gases to a surface
JPH0867986A (ja) * 1994-08-29 1996-03-12 Canon Inc 大面積機能性堆積膜の連続的形成方法及び形成装置
JP3332857B2 (ja) * 1998-04-15 2002-10-07 三菱重工業株式会社 高周波プラズマ発生装置及び給電方法
JP2001049440A (ja) * 1999-08-13 2001-02-20 Mitsubishi Heavy Ind Ltd プラズマｃｖｄ製膜方法及びプラズマｃｖｄ製膜装置
US20070154650A1 (en) * 2005-12-30 2007-07-05 Atomic Energy Council - Institute Of Nuclear Energy Research Method and apparatus for glow discharge plasma treatment of flexible material at atmospheric pressure
US7501305B2 (en) * 2006-10-23 2009-03-10 Canon Kabushiki Kaisha Method for forming deposited film and photovoltaic element

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5180434A (en) * 1991-03-11 1993-01-19 United Solar Systems Corporation Interfacial plasma bars for photovoltaic deposition apparatus
US6432492B2 (en) * 1995-12-08 2002-08-13 Unaxis Balzers Aktiengesellschaft HF-Plasma coating chamber or PECVD coating chamber, its use and method of plating CDs using the chamber
CN1147007C (zh) * 1998-03-03 2004-04-21 佳能株式会社 形成微晶硅系列薄膜的工艺和适于实施所述工艺的装置
EP1286382A2 (en) * 2001-08-23 2003-02-26 Konica Corporation Atmospheric pressure plasma treatment apparatus and method
JP6101459B2 (ja) * 2012-09-13 2017-03-22 日本エラストマー株式会社 変性共役ジエン系重合体、変性共役ジエン系重合体組成物及びその製造方法

Also Published As

Publication number Publication date
JP2012528242A (ja) 2012-11-12
KR20120030453A (ko) 2012-03-28
JP5659225B2 (ja) 2015-01-28
CN102449726A (zh) 2012-05-09
WO2010136464A1 (en) 2010-12-02
EP2256782B1 (en) 2018-08-29
US20100297361A1 (en) 2010-11-25
TWI590715B (zh) 2017-07-01
TW201106807A (en) 2011-02-16
EP2256782A1 (en) 2010-12-01
KR101698446B1 (ko) 2017-01-20

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Granted publication date: 20160803

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