JP2012527782A - シリコンウエハの前面にグリッド電極を形成する方法 - Google Patents

シリコンウエハの前面にグリッド電極を形成する方法 Download PDF

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Publication number
JP2012527782A
JP2012527782A JP2012512033A JP2012512033A JP2012527782A JP 2012527782 A JP2012527782 A JP 2012527782A JP 2012512033 A JP2012512033 A JP 2012512033A JP 2012512033 A JP2012512033 A JP 2012512033A JP 2012527782 A JP2012527782 A JP 2012527782A
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JP
Japan
Prior art keywords
metal paste
glass frit
paste
inorganic
silver
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012512033A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012527782A5 (enExample
Inventor
ケント アンダーソン デイビッド
デイビッド アンダーソン ラッセル
ウォーレン ハング ケネス
シン−ミン カオ
ラウディジオ ジョヴァンナ
チェン−ナン リン
チュン−クウェイ ウー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of JP2012527782A publication Critical patent/JP2012527782A/ja
Publication of JP2012527782A5 publication Critical patent/JP2012527782A5/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/206Electrodes for devices having potential barriers
    • H10F77/211Electrodes for devices having potential barriers for photovoltaic cells
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02Frit compositions, i.e. in a powdered or comminuted form
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/10Frit compositions, i.e. in a powdered or comminuted form containing lead
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/24Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14Conductive material dispersed in non-conductive inorganic material
    • H01B1/16Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Conductive Materials (AREA)
  • Photovoltaic Devices (AREA)
JP2012512033A 2009-05-20 2010-05-20 シリコンウエハの前面にグリッド電極を形成する方法 Pending JP2012527782A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17989109P 2009-05-20 2009-05-20
US61/179,891 2009-05-20
PCT/US2010/035579 WO2010135535A1 (en) 2009-05-20 2010-05-20 Process of forming a grid electrode on the front-side of a silicon wafer

Publications (2)

Publication Number Publication Date
JP2012527782A true JP2012527782A (ja) 2012-11-08
JP2012527782A5 JP2012527782A5 (enExample) 2013-07-04

Family

ID=42271962

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012512033A Pending JP2012527782A (ja) 2009-05-20 2010-05-20 シリコンウエハの前面にグリッド電極を形成する方法

Country Status (7)

Country Link
US (1) US8372679B2 (enExample)
EP (1) EP2433306A1 (enExample)
JP (1) JP2012527782A (enExample)
KR (1) KR101322142B1 (enExample)
CN (1) CN102428568A (enExample)
TW (1) TWI504010B (enExample)
WO (1) WO2010135535A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120007517A (ko) * 2009-03-30 2012-01-20 이 아이 듀폰 디 네모아 앤드 캄파니 금속 페이스트 및 규소 태양 전지의 제조시의 그 용도
CN102479883A (zh) * 2009-11-27 2012-05-30 无锡尚德太阳能电力有限公司 太阳电池正面电极的形成方法
US20110240124A1 (en) * 2010-03-30 2011-10-06 E.I. Du Pont De Nemours And Company Metal pastes and use thereof in the production of silicon solar cells
US8748310B2 (en) 2010-06-18 2014-06-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for producing a metal contact structure of a photovoltaic solar cell
US20120222738A1 (en) * 2011-03-02 2012-09-06 Electronics And Telecommunications Research Institute Conductive composition, silicon solar cell including the same, and manufacturing method thereof
US20130061918A1 (en) * 2011-03-03 2013-03-14 E. I. Dupont De Nemours And Company Process for the formation of a silver back electrode of a passivated emitter and rear contact silicon solar cell
KR101103501B1 (ko) * 2011-05-30 2012-01-09 한화케미칼 주식회사 태양전지 및 이의 제조방법
DE102011056632A1 (de) 2011-12-19 2013-06-20 Schott Solar Ag Verfahren zum Ausbilden einer Frontseitenmetallisierung einer Solarzelle sowie Solarzelle
WO2013105750A1 (ko) * 2012-01-10 2013-07-18 주식회사 젠스엔지니어링 전도성 페이스트를 전극으로 사용하는 실리콘 태양전지 모듈 및 그 제조 방법
KR101363344B1 (ko) 2012-01-10 2014-02-19 주식회사 젠스엔지니어링 전도성 페이스트를 전극으로 사용하는 실리콘 태양전지 모듈 및 그 제조 방법.
US20130183795A1 (en) * 2012-01-16 2013-07-18 E I Du Pont De Nemours And Company Solar cell back side electrode
JP5977540B2 (ja) * 2012-03-05 2016-08-24 シャープ株式会社 太陽電池の製造方法、製造装置及び太陽電池
US9722104B2 (en) 2014-11-28 2017-08-01 Lg Electronics Inc. Solar cell and method for manufacturing the same
CN114464690B (zh) * 2020-08-28 2023-02-07 晶科能源股份有限公司 太阳能电池栅线结构和光伏组件
CN114628252B (zh) * 2022-03-09 2024-10-25 通威太阳能(安徽)有限公司 硅片的碱抛光方法、perc电池及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008026415A1 (fr) * 2006-08-31 2008-03-06 Shin-Etsu Handotai Co., Ltd. Procédé permettant de former un substrat semi-conducteur et une électrode et procédé de fabrication d'une batterie solaire
WO2009041182A1 (ja) * 2007-09-27 2009-04-02 Murata Manufacturing Co., Ltd. Ag電極ペースト、太陽電池セルおよびその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1989012321A1 (en) 1988-06-10 1989-12-14 Mobil Solar Energy Corporation An improved method of fabricating contacts for solar cells
DE69224965T2 (de) * 1991-06-11 1998-10-29 Ase Americas Inc Verbesserte solarzelle und verfahren zu ihrer herstellung
US5178685A (en) * 1991-06-11 1993-01-12 Mobil Solar Energy Corporation Method for forming solar cell contacts and interconnecting solar cells
JP4121928B2 (ja) 2003-10-08 2008-07-23 シャープ株式会社 太陽電池の製造方法
US7462304B2 (en) * 2005-04-14 2008-12-09 E.I. Du Pont De Nemours And Company Conductive compositions used in the manufacture of semiconductor device
US9093590B2 (en) * 2006-12-26 2015-07-28 Kyocera Corporation Solar cell and solar cell manufacturing method
JP5629210B2 (ja) 2007-08-31 2014-11-19 ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー 太陽電池用層状コンタクト構造
US8759144B2 (en) * 2007-11-02 2014-06-24 Alliance For Sustainable Energy, Llc Fabrication of contacts for silicon solar cells including printing burn through layers

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008026415A1 (fr) * 2006-08-31 2008-03-06 Shin-Etsu Handotai Co., Ltd. Procédé permettant de former un substrat semi-conducteur et une électrode et procédé de fabrication d'une batterie solaire
WO2009041182A1 (ja) * 2007-09-27 2009-04-02 Murata Manufacturing Co., Ltd. Ag電極ペースト、太陽電池セルおよびその製造方法

Also Published As

Publication number Publication date
US8372679B2 (en) 2013-02-12
CN102428568A (zh) 2012-04-25
TWI504010B (zh) 2015-10-11
US20100294361A1 (en) 2010-11-25
EP2433306A1 (en) 2012-03-28
WO2010135535A1 (en) 2010-11-25
KR20120014211A (ko) 2012-02-16
TW201110397A (en) 2011-03-16
KR101322142B1 (ko) 2013-10-28

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