CN102428568A - 在硅片正面上形成栅极的方法 - Google Patents

在硅片正面上形成栅极的方法 Download PDF

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Publication number
CN102428568A
CN102428568A CN201080022318XA CN201080022318A CN102428568A CN 102428568 A CN102428568 A CN 102428568A CN 201080022318X A CN201080022318X A CN 201080022318XA CN 201080022318 A CN201080022318 A CN 201080022318A CN 102428568 A CN102428568 A CN 102428568A
Authority
CN
China
Prior art keywords
metal paste
weight
paste
silver
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201080022318XA
Other languages
English (en)
Chinese (zh)
Inventor
D·K·安德森
R·D·安德森
K·W·杭
高世铭
G·劳迪辛奥
林政男
吴隽夔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of CN102428568A publication Critical patent/CN102428568A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/10—Frit compositions, i.e. in a powdered or comminuted form containing lead
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Conductive Materials (AREA)
  • Photovoltaic Devices (AREA)
CN201080022318XA 2009-05-20 2010-05-20 在硅片正面上形成栅极的方法 Pending CN102428568A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17989109P 2009-05-20 2009-05-20
US61/179,891 2009-05-20
PCT/US2010/035579 WO2010135535A1 (en) 2009-05-20 2010-05-20 Process of forming a grid electrode on the front-side of a silicon wafer

Publications (1)

Publication Number Publication Date
CN102428568A true CN102428568A (zh) 2012-04-25

Family

ID=42271962

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080022318XA Pending CN102428568A (zh) 2009-05-20 2010-05-20 在硅片正面上形成栅极的方法

Country Status (7)

Country Link
US (1) US8372679B2 (enExample)
EP (1) EP2433306A1 (enExample)
JP (1) JP2012527782A (enExample)
KR (1) KR101322142B1 (enExample)
CN (1) CN102428568A (enExample)
TW (1) TWI504010B (enExample)
WO (1) WO2010135535A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114464690A (zh) * 2020-08-28 2022-05-10 晶科能源股份有限公司 太阳能电池栅线结构和光伏组件

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201044414A (en) * 2009-03-30 2010-12-16 Du Pont Metal pastes and use thereof in the production of silicon solar cells
CN102479883A (zh) * 2009-11-27 2012-05-30 无锡尚德太阳能电力有限公司 太阳电池正面电极的形成方法
US20110240124A1 (en) * 2010-03-30 2011-10-06 E.I. Du Pont De Nemours And Company Metal pastes and use thereof in the production of silicon solar cells
CN102947942B (zh) * 2010-06-18 2015-12-16 弗劳恩霍弗实用研究促进协会 制造光伏太阳能电池的金属接触结构的方法
CN102655030B (zh) * 2011-03-02 2015-07-15 韩国电子通信研究院 导电组合物、含其的硅太阳能电池、及其制造方法
US20130061918A1 (en) * 2011-03-03 2013-03-14 E. I. Dupont De Nemours And Company Process for the formation of a silver back electrode of a passivated emitter and rear contact silicon solar cell
KR101103501B1 (ko) * 2011-05-30 2012-01-09 한화케미칼 주식회사 태양전지 및 이의 제조방법
DE102011056632A1 (de) 2011-12-19 2013-06-20 Schott Solar Ag Verfahren zum Ausbilden einer Frontseitenmetallisierung einer Solarzelle sowie Solarzelle
WO2013105750A1 (ko) * 2012-01-10 2013-07-18 주식회사 젠스엔지니어링 전도성 페이스트를 전극으로 사용하는 실리콘 태양전지 모듈 및 그 제조 방법
KR101363344B1 (ko) 2012-01-10 2014-02-19 주식회사 젠스엔지니어링 전도성 페이스트를 전극으로 사용하는 실리콘 태양전지 모듈 및 그 제조 방법.
US20130183795A1 (en) * 2012-01-16 2013-07-18 E I Du Pont De Nemours And Company Solar cell back side electrode
JP5977540B2 (ja) * 2012-03-05 2016-08-24 シャープ株式会社 太陽電池の製造方法、製造装置及び太陽電池
JP6219913B2 (ja) * 2014-11-28 2017-10-25 エルジー エレクトロニクス インコーポレイティド 太陽電池及びその製造方法
CN114628252B (zh) * 2022-03-09 2024-10-25 通威太阳能（安徽）有限公司 硅片的碱抛光方法、perc电池及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5279682A (en) * 1991-06-11 1994-01-18 Mobil Solar Energy Corporation Solar cell and method of making same
CN1862839A (zh) * 2005-04-14 2006-11-15 E.I.内穆尔杜邦公司 半导体器件的制造方法及其中用到的导电组合物
WO2009029738A1 (en) * 2007-08-31 2009-03-05 Ferro Corporation Layered contact structure for solar cells
WO2009059302A1 (en) * 2007-11-02 2009-05-07 Alliance For Sustainable Energy, Llc Fabrication of contacts for silicon solar cells including printing burn through layers
EP2058865A1 (en) * 2006-08-31 2009-05-13 Shin-Etsu Handotai Co., Ltd Method for forming semiconductor substrate and electrode, and method for manufacturing solar battery

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE68918565T2 (de) * 1988-06-10 1995-03-09 Mobil Solar Energy Corp Verfahren zur herstellung von sonnenzellenkontakten.
US5178685A (en) * 1991-06-11 1993-01-12 Mobil Solar Energy Corporation Method for forming solar cell contacts and interconnecting solar cells
JP4121928B2 (ja) * 2003-10-08 2008-07-23 シャープ株式会社 太陽電池の製造方法
EP2104147B1 (en) * 2006-12-26 2015-04-15 Kyocera Corporation Solar cell element and solar cell element manufacturing method
TW200926210A (en) * 2007-09-27 2009-06-16 Murata Manufacturing Co Ag electrode paste, solar battery cell, and process for producing the solar battery cell

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5279682A (en) * 1991-06-11 1994-01-18 Mobil Solar Energy Corporation Solar cell and method of making same
CN1862839A (zh) * 2005-04-14 2006-11-15 E.I.内穆尔杜邦公司 半导体器件的制造方法及其中用到的导电组合物
EP2058865A1 (en) * 2006-08-31 2009-05-13 Shin-Etsu Handotai Co., Ltd Method for forming semiconductor substrate and electrode, and method for manufacturing solar battery
WO2009029738A1 (en) * 2007-08-31 2009-03-05 Ferro Corporation Layered contact structure for solar cells
WO2009059302A1 (en) * 2007-11-02 2009-05-07 Alliance For Sustainable Energy, Llc Fabrication of contacts for silicon solar cells including printing burn through layers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114464690A (zh) * 2020-08-28 2022-05-10 晶科能源股份有限公司 太阳能电池栅线结构和光伏组件

Also Published As

Publication number Publication date
KR20120014211A (ko) 2012-02-16
US8372679B2 (en) 2013-02-12
TW201110397A (en) 2011-03-16
JP2012527782A (ja) 2012-11-08
US20100294361A1 (en) 2010-11-25
KR101322142B1 (ko) 2013-10-28
TWI504010B (zh) 2015-10-11
EP2433306A1 (en) 2012-03-28
WO2010135535A1 (en) 2010-11-25

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Application publication date: 20120425