KR101322142B1 - 규소 웨이퍼의 전면 상에 그리드 전극을 형성하는 방법 - Google Patents

규소 웨이퍼의 전면 상에 그리드 전극을 형성하는 방법 Download PDF

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Publication number
KR101322142B1
KR101322142B1 KR1020117030336A KR20117030336A KR101322142B1 KR 101322142 B1 KR101322142 B1 KR 101322142B1 KR 1020117030336 A KR1020117030336 A KR 1020117030336A KR 20117030336 A KR20117030336 A KR 20117030336A KR 101322142 B1 KR101322142 B1 KR 101322142B1
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KR
South Korea
Prior art keywords
metal paste
glass frit
paste
electrically conductive
silver
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020117030336A
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English (en)
Korean (ko)
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KR20120014211A (ko
Inventor
데이빗 켄트 앤더슨
러셀 데이빗 앤더슨
케네스 워런 행
시흐-밍 카오
지오반나 라우디시오
쳉-난 린
춘-크웨이 우
Original Assignee
이 아이 듀폰 디 네모아 앤드 캄파니
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Publication of KR20120014211A publication Critical patent/KR20120014211A/ko
Application granted granted Critical
Publication of KR101322142B1 publication Critical patent/KR101322142B1/ko
Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/10—Frit compositions, i.e. in a powdered or comminuted form containing lead
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Conductive Materials (AREA)
  • Photovoltaic Devices (AREA)
KR1020117030336A 2009-05-20 2010-05-20 규소 웨이퍼의 전면 상에 그리드 전극을 형성하는 방법 Expired - Fee Related KR101322142B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17989109P 2009-05-20 2009-05-20
US61/179,891 2009-05-20
PCT/US2010/035579 WO2010135535A1 (en) 2009-05-20 2010-05-20 Process of forming a grid electrode on the front-side of a silicon wafer

Publications (2)

Publication Number Publication Date
KR20120014211A KR20120014211A (ko) 2012-02-16
KR101322142B1 true KR101322142B1 (ko) 2013-10-28

Family

ID=42271962

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117030336A Expired - Fee Related KR101322142B1 (ko) 2009-05-20 2010-05-20 규소 웨이퍼의 전면 상에 그리드 전극을 형성하는 방법

Country Status (7)

Country Link
US (1) US8372679B2 (enExample)
EP (1) EP2433306A1 (enExample)
JP (1) JP2012527782A (enExample)
KR (1) KR101322142B1 (enExample)
CN (1) CN102428568A (enExample)
TW (1) TWI504010B (enExample)
WO (1) WO2010135535A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120007517A (ko) * 2009-03-30 2012-01-20 이 아이 듀폰 디 네모아 앤드 캄파니 금속 페이스트 및 규소 태양 전지의 제조시의 그 용도
CN102479883A (zh) * 2009-11-27 2012-05-30 无锡尚德太阳能电力有限公司 太阳电池正面电极的形成方法
US20110240124A1 (en) * 2010-03-30 2011-10-06 E.I. Du Pont De Nemours And Company Metal pastes and use thereof in the production of silicon solar cells
WO2011157420A2 (de) * 2010-06-18 2011-12-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur herstellung einer metallischen kontaktstruktur einer photovoltaischen solarzelle
JP5789544B2 (ja) * 2011-03-02 2015-10-07 韓國電子通信研究院Ｅｌｅｃｔｒｏｎｉｃｓ ａｎｄ Ｔｅｌｅｃｏｍｍｕｎｉｃａｔｉｏｎｓ Ｒｅｓｅａｒｃｈ Ｉｎｓｔｉｔｕｔｅ 伝導性組成物並びにこれを含むシリコン太陽電池及びその製造方法
US20130061918A1 (en) * 2011-03-03 2013-03-14 E. I. Dupont De Nemours And Company Process for the formation of a silver back electrode of a passivated emitter and rear contact silicon solar cell
KR101103501B1 (ko) * 2011-05-30 2012-01-09 한화케미칼 주식회사 태양전지 및 이의 제조방법
DE102011056632A1 (de) 2011-12-19 2013-06-20 Schott Solar Ag Verfahren zum Ausbilden einer Frontseitenmetallisierung einer Solarzelle sowie Solarzelle
KR101363344B1 (ko) 2012-01-10 2014-02-19 주식회사 젠스엔지니어링 전도성 페이스트를 전극으로 사용하는 실리콘 태양전지 모듈 및 그 제조 방법.
WO2013105750A1 (ko) * 2012-01-10 2013-07-18 주식회사 젠스엔지니어링 전도성 페이스트를 전극으로 사용하는 실리콘 태양전지 모듈 및 그 제조 방법
US20130183795A1 (en) * 2012-01-16 2013-07-18 E I Du Pont De Nemours And Company Solar cell back side electrode
JP5977540B2 (ja) * 2012-03-05 2016-08-24 シャープ株式会社 太陽電池の製造方法、製造装置及び太陽電池
EP3509112B1 (en) 2014-11-28 2020-10-14 LG Electronics Inc. Solar cell and method for manufacturing the same
CN112002772B (zh) * 2020-08-28 2022-03-08 晶科能源股份有限公司 太阳能电池栅线结构和光伏组件
CN114628252B (zh) * 2022-03-09 2024-10-25 通威太阳能（安徽）有限公司 硅片的碱抛光方法、perc电池及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5279682A (en) * 1991-06-11 1994-01-18 Mobil Solar Energy Corporation Solar cell and method of making same
WO2009029738A1 (en) 2007-08-31 2009-03-05 Ferro Corporation Layered contact structure for solar cells
EP2058865A1 (en) * 2006-08-31 2009-05-13 Shin-Etsu Handotai Co., Ltd Method for forming semiconductor substrate and electrode, and method for manufacturing solar battery

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900702573A (ko) 1988-06-10 1990-12-07 버나드 엠. 길레스피에 개량된 태양전지용 접촉구의 제조방법
US5178685A (en) 1991-06-11 1993-01-12 Mobil Solar Energy Corporation Method for forming solar cell contacts and interconnecting solar cells
JP4121928B2 (ja) * 2003-10-08 2008-07-23 シャープ株式会社 太陽電池の製造方法
US7462304B2 (en) * 2005-04-14 2008-12-09 E.I. Du Pont De Nemours And Company Conductive compositions used in the manufacture of semiconductor device
WO2008078771A1 (ja) * 2006-12-26 2008-07-03 Kyocera Corporation 太陽電池素子及び太陽電池素子の製造方法
TW200926210A (en) * 2007-09-27 2009-06-16 Murata Manufacturing Co Ag electrode paste, solar battery cell, and process for producing the solar battery cell
US8759144B2 (en) * 2007-11-02 2014-06-24 Alliance For Sustainable Energy, Llc Fabrication of contacts for silicon solar cells including printing burn through layers

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5279682A (en) * 1991-06-11 1994-01-18 Mobil Solar Energy Corporation Solar cell and method of making same
EP2058865A1 (en) * 2006-08-31 2009-05-13 Shin-Etsu Handotai Co., Ltd Method for forming semiconductor substrate and electrode, and method for manufacturing solar battery
WO2009029738A1 (en) 2007-08-31 2009-03-05 Ferro Corporation Layered contact structure for solar cells

Also Published As

Publication number Publication date
WO2010135535A1 (en) 2010-11-25
TW201110397A (en) 2011-03-16
EP2433306A1 (en) 2012-03-28
US8372679B2 (en) 2013-02-12
CN102428568A (zh) 2012-04-25
US20100294361A1 (en) 2010-11-25
TWI504010B (zh) 2015-10-11
KR20120014211A (ko) 2012-02-16
JP2012527782A (ja) 2012-11-08

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