JP2012525690A5 - - Google Patents
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- Publication number
- JP2012525690A5 JP2012525690A5 JP2012507659A JP2012507659A JP2012525690A5 JP 2012525690 A5 JP2012525690 A5 JP 2012525690A5 JP 2012507659 A JP2012507659 A JP 2012507659A JP 2012507659 A JP2012507659 A JP 2012507659A JP 2012525690 A5 JP2012525690 A5 JP 2012525690A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor body
- emitting diode
- light emitting
- carrier
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 25
- 239000000969 carrier Substances 0.000 claims 14
- 239000000463 material Substances 0.000 claims 7
- 238000000605 extraction Methods 0.000 claims 5
- 239000004020 conductor Substances 0.000 claims 4
- 238000006243 chemical reaction Methods 0.000 claims 3
- PBCFLUZVCVVTBY-UHFFFAOYSA-N Tantalum pentoxide Chemical compound O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims 2
- 239000000919 ceramic Substances 0.000 claims 2
- 238000004020 luminiscence type Methods 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- 229910017083 AlN Inorganic materials 0.000 claims 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims 1
- 230000005670 electromagnetic radiation Effects 0.000 claims 1
- 229910003465 moissanite Inorganic materials 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 229910052950 sphalerite Inorganic materials 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 235000010215 titanium dioxide Nutrition 0.000 claims 1
- 229910052984 zinc sulfide Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009019161A DE102009019161A1 (de) | 2009-04-28 | 2009-04-28 | Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode |
DE102009019161.5 | 2009-04-28 | ||
PCT/EP2010/053942 WO2010124915A1 (de) | 2009-04-28 | 2010-03-25 | Leuchtdiode und verfahren zur herstellung einer leuchtdiode |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012525690A JP2012525690A (ja) | 2012-10-22 |
JP2012525690A5 true JP2012525690A5 (zh) | 2013-05-02 |
Family
ID=42236303
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012507659A Pending JP2012525690A (ja) | 2009-04-28 | 2010-03-25 | 発光ダイオードおよび発光ダイオードを製造する方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8796714B2 (zh) |
EP (1) | EP2425464A1 (zh) |
JP (1) | JP2012525690A (zh) |
KR (1) | KR20120011056A (zh) |
CN (1) | CN102414849A (zh) |
DE (1) | DE102009019161A1 (zh) |
WO (1) | WO2010124915A1 (zh) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9000461B2 (en) * | 2003-07-04 | 2015-04-07 | Epistar Corporation | Optoelectronic element and manufacturing method thereof |
JP2011071272A (ja) * | 2009-09-25 | 2011-04-07 | Toshiba Corp | 半導体発光装置及びその製造方法 |
KR101194844B1 (ko) | 2010-11-15 | 2012-10-25 | 삼성전자주식회사 | 발광소자 및 그 제조방법 |
JP5325197B2 (ja) * | 2010-11-30 | 2013-10-23 | 豊田合成株式会社 | 発光装置およびその製造方法 |
JP5777879B2 (ja) | 2010-12-27 | 2015-09-09 | ローム株式会社 | 発光素子、発光素子ユニットおよび発光素子パッケージ |
DE102011012298A1 (de) * | 2010-12-28 | 2012-06-28 | Osram Opto Semiconductors Gmbh | Verbundsubstrat, Halbleiterchip mit Verbundsubstrat und Verfahren zur Herstellung von Verbundsubstraten und Halbleiterchips |
JP5887638B2 (ja) | 2011-05-30 | 2016-03-16 | 億光電子工業股▲ふん▼有限公司Everlight Electronics Co.,Ltd. | 発光ダイオード |
DE102011077898A1 (de) * | 2011-06-21 | 2012-12-27 | Osram Ag | LED-Leuchtvorrichtung und Verfahren zum Herstellen einer LED-Leuchtvorrichtung |
DE102011114641B4 (de) | 2011-09-30 | 2021-08-12 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
DE102014105839A1 (de) * | 2014-04-25 | 2015-10-29 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
WO2016066476A1 (en) * | 2014-10-27 | 2016-05-06 | Koninklijke Philips N.V. | Directional light emitting arrangement and a method of producing the same |
WO2016120400A1 (en) | 2015-01-30 | 2016-08-04 | Osram Opto Semiconductors Gmbh | Method for producing a semiconductor component and semiconductor component |
US10770440B2 (en) * | 2017-03-15 | 2020-09-08 | Globalfoundries Inc. | Micro-LED display assembly |
DE102017115794A1 (de) * | 2017-07-13 | 2019-01-17 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
DE102017119344A1 (de) | 2017-08-24 | 2019-02-28 | Osram Opto Semiconductors Gmbh | Träger und Bauteil mit Pufferschicht sowie Verfahren zur Herstellung eines Bauteils |
DE102018119688B4 (de) * | 2018-08-14 | 2024-06-27 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauelement mit einem ersten Kontaktelement, welches einen ersten und einen zweiten Abschnitt aufweist sowie Verfahren zur Herstellung des optoelektronischen Halbleiterbauelements |
KR102186574B1 (ko) * | 2019-05-29 | 2020-12-04 | 한국산업기술대학교산학협력단 | 발광 다이오드 |
KR102375592B1 (ko) * | 2020-09-03 | 2022-03-21 | 한국공학대학교산학협력단 | 저저항 발광 다이오드 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1264228C (zh) | 1996-06-26 | 2006-07-12 | 奥斯兰姆奥普托半导体股份有限两合公司 | 发光半导体器件、全色发光二极管显示装置及其应用 |
WO2001082384A1 (de) | 2000-04-26 | 2001-11-01 | Osram Opto Semiconductors Gmbh | Strahlungsmittierendes halbleiterbauelement und herstellungsverfahren |
JP2002170989A (ja) * | 2000-12-04 | 2002-06-14 | Sharp Corp | 窒化物系化合物半導体発光素子 |
US7233028B2 (en) | 2001-02-23 | 2007-06-19 | Nitronex Corporation | Gallium nitride material devices and methods of forming the same |
JP4055503B2 (ja) | 2001-07-24 | 2008-03-05 | 日亜化学工業株式会社 | 半導体発光素子 |
JP4356723B2 (ja) | 2001-07-24 | 2009-11-04 | 日亜化学工業株式会社 | 窒化物半導体発光素子の製造方法 |
DE10148227B4 (de) | 2001-09-28 | 2015-03-05 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip, Verfahren zu dessen Herstellung und strahlungsemittierendes Bauelement |
JPWO2003044872A1 (ja) | 2001-11-19 | 2005-03-24 | 三洋電機株式会社 | 化合物半導体発光素子 |
JP2004297095A (ja) * | 2001-11-19 | 2004-10-21 | Sanyo Electric Co Ltd | 化合物半導体発光素子の製造方法 |
US6730940B1 (en) * | 2002-10-29 | 2004-05-04 | Lumileds Lighting U.S., Llc | Enhanced brightness light emitting device spot emitter |
US8835937B2 (en) * | 2004-02-20 | 2014-09-16 | Osram Opto Semiconductors Gmbh | Optoelectronic component, device comprising a plurality of optoelectronic components, and method for the production of an optoelectronic component |
JP2006222288A (ja) * | 2005-02-10 | 2006-08-24 | Toshiba Corp | 白色led及びその製造方法 |
JP2006253172A (ja) | 2005-03-08 | 2006-09-21 | Toshiba Corp | 半導体発光素子、半導体発光装置及び半導体発光素子の製造方法 |
US7341878B2 (en) * | 2005-03-14 | 2008-03-11 | Philips Lumileds Lighting Company, Llc | Wavelength-converted semiconductor light emitting device |
JP4950999B2 (ja) * | 2005-10-07 | 2012-06-13 | オスラム シルヴェニア インコーポレイテッド | 透光性のヒートシンクを有するled |
US7514721B2 (en) * | 2005-11-29 | 2009-04-07 | Koninklijke Philips Electronics N.V. | Luminescent ceramic element for a light emitting device |
DE112007000290B4 (de) * | 2006-01-31 | 2017-06-14 | Kyocera Corp. | Lichtemittierende Vorrichtung und lichtemittierendes Modul |
US7521727B2 (en) | 2006-04-26 | 2009-04-21 | Rohm And Haas Company | Light emitting device having improved light extraction efficiency and method of making same |
US7521862B2 (en) | 2006-11-20 | 2009-04-21 | Philips Lumileds Lighting Co., Llc | Light emitting device including luminescent ceramic and light-scattering material |
DE102007019776A1 (de) * | 2007-04-26 | 2008-10-30 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente |
DE102007022947B4 (de) * | 2007-04-26 | 2022-05-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen |
US8026527B2 (en) * | 2007-12-06 | 2011-09-27 | Bridgelux, Inc. | LED structure |
DE102008062932A1 (de) | 2008-12-23 | 2010-06-24 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
-
2009
- 2009-04-28 DE DE102009019161A patent/DE102009019161A1/de not_active Withdrawn
-
2010
- 2010-03-25 KR KR1020117028251A patent/KR20120011056A/ko not_active Application Discontinuation
- 2010-03-25 US US13/263,789 patent/US8796714B2/en not_active Expired - Fee Related
- 2010-03-25 CN CN2010800185563A patent/CN102414849A/zh active Pending
- 2010-03-25 EP EP10710339A patent/EP2425464A1/de not_active Withdrawn
- 2010-03-25 JP JP2012507659A patent/JP2012525690A/ja active Pending
- 2010-03-25 WO PCT/EP2010/053942 patent/WO2010124915A1/de active Application Filing
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