JP2012525003A - Mosfet及びデュアルゲートjfetを含む電子回路 - Google Patents
Mosfet及びデュアルゲートjfetを含む電子回路 Download PDFInfo
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- H03F3/14—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with amplifying devices having more than three electrodes or more than two PN junctions
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- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
- H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
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- H—ELECTRICITY
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- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/095—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being Schottky barrier gate field-effect transistors
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
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Abstract
Description
本出願は、2009年4月22日に「MOSFET及びデュアルゲートJFETを含む電子回路」なる名称で出願された米国特許仮出願第61/171,689号の優先件利益を主張するものであり、この仮出願は参照することにより本明細書に組み込まれるものとする。本出願は、2008年2月13日に「高降伏電圧ダブルゲート半導体装置」なる名称で出願された米国特許出願第61/171,689号にも関連し、この出願も参照することにより本明細書に組み込まれるものとする。
Claims (26)
- ソース、ドレイン及びゲートを含むMOSFETと、
ソース、ドレイン、トップゲート及びボトムゲートを含む、前記MOSFETと別個のJFETとを含み、
前記JFETのソースが前記MOSFETのドレインに直接結合されている、
電子回路。 - 前記JFETのゲートが前記MOSFETのゲートに結合されている、請求項1記載の電子回路。
- 前記JFETのボトムゲートが前記MOSFETのゲートに結合されている、請求項1又は2記載の電子回路。
- 前記JFETのトップ及びボトムゲートが前記MOSFETのゲートに結合されている、請求項1,2又は3記載の電子回路。
- 前記JFETのトップゲートがJFETゲート回路により前記MOSFETのゲートに結合されている、請求項1−4のいずれかに記載の電子回路。
- 前記JFETのトップゲートが前記JFETのボトムゲートに結合され、前記両ゲートが前記MOSFETのゲートと独立である、請求項1−5のいずれかに記載の電子回路。
- 前記JFETのトップ及びボトムゲートが両方とも一つのDCバイアス源に結合されている、請求項6記載の電子回路。
- 前記JFETのトップ及びボトムゲートが両方とも接地されている、請求項6記載の電子回路。
- 前記JFETのトップゲートが第1のDCバイアス源に結合され、前記JFETのボトムゲートが第2のDCバイアス源に結合されている、請求項6記載の電子回路。
- 前記JFETのトップゲートが前記MOSFETのゲートに結合され、前記JFETのボトムゲートが前記MOSFETのゲートと独立である、請求項1−9のいずれかに記載の電子回路。
- 前記JFETのトップゲートがDCバイアス源に結合されている、請求項10記載の電子回路。
- 前記JFETのボトムゲートがDCバイアス源に結合されている、請求項10記載の電子回路。
- 前記JFETのボトムゲートが接地されている、請求項10記載の電子回路。
- 前記MOSFETのドレインと前記JFETのソースとの間の共通ノードと設置との間に結合された共通ノード回路を更に備える、請求項1−13のいずれかに記載の電子回路。
- 前記JFETのトップ及びボトムゲートが両方とも接地されている、請求項14記載の電子回路。
- 前記MOSFET及び前記JFETのゲートが異なる幅を有する、請求項1−6のいずれかに記載の電子回路。
- トランシーバと、
前記トランシーバに入力整合回路により結合された電力増幅器と、
を備え、前記電力増幅器は、
ソース、ドレイン及びゲートを含むMOSFETと、
ソース、ドレイン、トップゲート及びボトムゲートを含む、前記MOSFETと別個のJFETとを含み、
前記JFETのソースが前記MOSFETのドレインに直接結合されている、
装置。 - 前記トランシーバは約700MHz〜約2.5GHzの範囲内の周波数を有する信号を発生するように構成されている、請求項17記載の装置。
- 前記トランシーバは約150MHz〜約6GHzの範囲内の周波数を有する信号を発生するように構成されている、請求項17記載の装置。
- 前記トランシーバは前記MOSFET及び前記JFETと同じ基板上に配置されている、請求項17−19のいずれかに記載の装置。
- 前記JFETのドレインに結合された出力整合回路を更に備える、請求項17−20のいずれかに記載の装置。
- MOSFETのゲートを第1の信号で制御するステップ、
前記MOSFETとカスコード構成にされたJFETのトップゲートを第2の信号で制御するステップ、及び
前記JFETのボトムゲートを第3の信号で制御するステップ、
を備える方法。 - 前記第2信号は前記第1信号に依存する、請求項22記載の方法。
- 前記第3信号は前記第2信号に依存する、請求項22又は23記載の方法。
- 前記第2信号は前記第1信号に依存しない、請求項22、23又は24記載の方法。
- 前記第3信号は前記第2信号に依存する、請求項25記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17168909P | 2009-04-22 | 2009-04-22 | |
US61/171,689 | 2009-04-22 | ||
US12/686,573 US7969243B2 (en) | 2009-04-22 | 2010-01-13 | Electronic circuits including a MOSFET and a dual-gate JFET |
US12/686,573 | 2010-01-13 | ||
PCT/US2010/030770 WO2010123712A1 (en) | 2009-04-22 | 2010-04-12 | Electronic circuits including a mosfet and a dual-gate jfet |
Publications (3)
Publication Number | Publication Date |
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JP2012525003A true JP2012525003A (ja) | 2012-10-18 |
JP2012525003A5 JP2012525003A5 (ja) | 2013-05-09 |
JP5386034B2 JP5386034B2 (ja) | 2014-01-15 |
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Application Number | Title | Priority Date | Filing Date |
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JP2012507253A Active JP5386034B2 (ja) | 2009-04-22 | 2010-04-12 | Mosfet及びデュアルゲートjfetを含む電子回路 |
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Country | Link |
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US (3) | US7969243B2 (ja) |
EP (1) | EP2422447B1 (ja) |
JP (1) | JP5386034B2 (ja) |
KR (1) | KR101335202B1 (ja) |
CN (1) | CN102414984B (ja) |
TW (1) | TWI351100B (ja) |
WO (1) | WO2010123712A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015041832A (ja) * | 2013-08-21 | 2015-03-02 | 三菱電機株式会社 | 電力増幅器 |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8008731B2 (en) | 2005-10-12 | 2011-08-30 | Acco | IGFET device having a RF capability |
WO2009082706A1 (en) | 2007-12-21 | 2009-07-02 | The Trustees Of Columbia University In The City Of New York | Active cmos sensor array for electrochemical biomolecular detection |
US9240402B2 (en) | 2008-02-13 | 2016-01-19 | Acco Semiconductor, Inc. | Electronic circuits including a MOSFET and a dual-gate JFET |
US7863645B2 (en) * | 2008-02-13 | 2011-01-04 | ACCO Semiconductor Inc. | High breakdown voltage double-gate semiconductor device |
US7969243B2 (en) * | 2009-04-22 | 2011-06-28 | Acco Semiconductor, Inc. | Electronic circuits including a MOSFET and a dual-gate JFET |
US8928410B2 (en) | 2008-02-13 | 2015-01-06 | Acco Semiconductor, Inc. | Electronic circuits including a MOSFET and a dual-gate JFET |
US7952431B2 (en) * | 2009-08-28 | 2011-05-31 | Acco Semiconductor, Inc. | Linearization circuits and methods for power amplification |
US8058674B2 (en) * | 2009-10-07 | 2011-11-15 | Moxtek, Inc. | Alternate 4-terminal JFET geometry to reduce gate to source capacitance |
JP5012930B2 (ja) * | 2010-02-15 | 2012-08-29 | 株式会社デンソー | ハイブリッドパワーデバイス |
US8532584B2 (en) | 2010-04-30 | 2013-09-10 | Acco Semiconductor, Inc. | RF switches |
US8481380B2 (en) * | 2010-09-23 | 2013-07-09 | International Business Machines Corporation | Asymmetric wedge JFET, related method and design structure |
CN102130053B (zh) * | 2010-12-03 | 2014-08-13 | 华东光电集成器件研究所 | 一种n沟道jfet集成放大器的制造方法 |
US8797104B2 (en) * | 2012-04-13 | 2014-08-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Amplifier with floating well |
US10269658B2 (en) | 2012-06-29 | 2019-04-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit devices with well regions and methods for forming the same |
WO2014062936A1 (en) * | 2012-10-17 | 2014-04-24 | The Trustees Of Columbia University In The City Of New York | Cmos-integrated jfet for dense low-noise bioelectronic platforms |
US9111765B2 (en) * | 2012-11-19 | 2015-08-18 | Taiwan Semiconductor Manufacturing Company Limited | Integrated circuit (IC) structure |
US9780211B2 (en) | 2012-12-31 | 2017-10-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Power cell and power cell circuit for a power amplifier |
US9490248B2 (en) * | 2012-12-31 | 2016-11-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Power cell, power cell circuit for a power amplifier and a method of making and using a power cell |
US9882012B2 (en) | 2013-05-13 | 2018-01-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Junction gate field-effect transistor (JFET) having source/drain and gate isolation regions |
US9287413B2 (en) | 2013-05-13 | 2016-03-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Junction gate field-effect transistor (JFET) and semiconductor device |
US9318487B2 (en) * | 2013-07-09 | 2016-04-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | High performance power cell for RF power amplifier |
US9071203B2 (en) * | 2013-07-11 | 2015-06-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMOS cascode power cells |
US9202934B2 (en) * | 2013-10-16 | 2015-12-01 | Analog Devices Global | Junction field effect transistor, and method of manufacture thereof |
CN104766887B (zh) * | 2014-01-03 | 2019-05-17 | 艾壳 | 包括mosfet和双栅极jfet的电子电路 |
US9543290B2 (en) * | 2014-01-23 | 2017-01-10 | International Business Machines Corporation | Normally-off junction field-effect transistors and application to complementary circuits |
US9460926B2 (en) * | 2014-06-30 | 2016-10-04 | Alpha And Omega Semiconductor Incorporated | Forming JFET and LDMOS transistor in monolithic power integrated circuit using deep diffusion regions |
CN104702226A (zh) * | 2015-03-31 | 2015-06-10 | 宜确半导体(苏州)有限公司 | 一种改进的共源共栅射频功率放大器 |
KR102343894B1 (ko) | 2015-04-07 | 2021-12-27 | 삼성디스플레이 주식회사 | 표시 장치 |
US9853103B2 (en) * | 2016-04-07 | 2017-12-26 | Cirrus Logic, Inc. | Pinched doped well for a junction field effect transistor (JFET) isolated from the substrate |
US9853637B1 (en) * | 2016-06-24 | 2017-12-26 | Infineon Technologies Ag | Dual gate switch device |
US10218350B2 (en) | 2016-07-20 | 2019-02-26 | Semiconductor Components Industries, Llc | Circuit with transistors having coupled gates |
US9947654B2 (en) | 2016-09-08 | 2018-04-17 | Semiconductor Components Industries, Llc | Electronic device including a transistor and a field electrode |
TWI615966B (zh) * | 2016-12-29 | 2018-02-21 | 新唐科技股份有限公司 | 半導體元件 |
US9941356B1 (en) | 2017-04-20 | 2018-04-10 | Vanguard International Semiconductor Corporation | JFET and method for fabricating the same |
US20190131404A1 (en) * | 2017-10-30 | 2019-05-02 | Analog Devices Global Unlimited Company | Low gate current junction field effect transistor device architecture |
US10826485B2 (en) | 2018-12-17 | 2020-11-03 | Analog Devices International Unlimited Company | Cascode compound switch slew rate control |
US11271108B2 (en) | 2020-04-08 | 2022-03-08 | International Business Machines Corporation | Low-noise gate-all-around junction field effect transistor |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0399466A (ja) * | 1989-09-12 | 1991-04-24 | Fujitsu Ltd | 半導体装置およびその製造方法 |
JPH03503944A (ja) * | 1988-04-21 | 1991-08-29 | アナログ デバイセス インコーポレーテッド | 静電放電現象によるjfetの損傷を減少するための手段 |
US5537078A (en) * | 1995-03-31 | 1996-07-16 | Linear Technology Corporation | Operational amplifier with JFET inputs having low input bias current and methods for using same |
JPH10107214A (ja) * | 1996-10-01 | 1998-04-24 | Masashi Mukogawa | 半導体装置 |
JP2001237316A (ja) * | 2000-02-21 | 2001-08-31 | Hitachi Ltd | 無線通信装置 |
US20010050589A1 (en) * | 1999-01-22 | 2001-12-13 | Siemens Ag. | Hybrid power MOSFET for high current-carrying capacity |
US20020105360A1 (en) * | 2001-01-19 | 2002-08-08 | Integrant Technologies Inc. | Single-ended differential circuit using complementary devices |
Family Cites Families (72)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US567927A (en) * | 1896-09-15 | Machine | ||
IT1094069B (it) | 1978-04-18 | 1985-07-26 | Muriotto Angelo | Procedimento per la produzione di pannelli prefabbricati ed elementi tridimensionali e prodotti ottenuti con tale procedimento |
US4228367A (en) * | 1978-08-07 | 1980-10-14 | Precision Monolithics, Inc. | High speed integrated switching circuit for analog signals |
US4255714A (en) * | 1979-02-21 | 1981-03-10 | Rca Corporation | GaAs Dual-gate FET frequency discriminator |
US4353036A (en) * | 1980-08-29 | 1982-10-05 | Rca Corporation | Field effect transistor amplifier with variable gain control |
US4523111A (en) * | 1983-03-07 | 1985-06-11 | General Electric Company | Normally-off, gate-controlled electrical circuit with low on-resistance |
US4811075A (en) * | 1987-04-24 | 1989-03-07 | Power Integrations, Inc. | High voltage MOS transistors |
US5061903A (en) * | 1990-02-27 | 1991-10-29 | Grumman Aerospace Corporation | High voltage modified cascode circuit |
KR950006483B1 (ko) * | 1990-06-13 | 1995-06-15 | 가부시끼가이샤 도시바 | 종형 mos트랜지스터와 그 제조방법 |
KR960006004A (ko) * | 1994-07-25 | 1996-02-23 | 김주용 | 반도체 소자 및 그 제조방법 |
US5677927A (en) | 1994-09-20 | 1997-10-14 | Pulson Communications Corporation | Ultrawide-band communication system and method |
US5543643A (en) * | 1995-07-13 | 1996-08-06 | Lsi Logic Corporation | Combined JFET and MOS transistor device, circuit |
US5684080A (en) | 1995-11-15 | 1997-11-04 | Shell Oil Company | Aqueous polymer emulsion |
US6088484A (en) * | 1996-11-08 | 2000-07-11 | Hughes Electronics Corporation | Downloading of personalization layers for symbolically compressed objects |
US6091295A (en) * | 1997-06-27 | 2000-07-18 | The Whitaker Corporation | Predistortion to improve linearity of an amplifier |
US5969582A (en) * | 1997-07-03 | 1999-10-19 | Ericsson Inc. | Impedance matching circuit for power amplifier |
US5898198A (en) * | 1997-08-04 | 1999-04-27 | Spectrian | RF power device having voltage controlled linearity |
US5912490A (en) * | 1997-08-04 | 1999-06-15 | Spectrian | MOSFET having buried shield plate for reduced gate/drain capacitance |
US6061008A (en) * | 1997-12-19 | 2000-05-09 | Rockwell Science Center, Inc. | Sigma-delta-sigma modulator for high performance analog-to-digital and digital-to-analog conversion |
GB2336485B (en) | 1998-04-14 | 2002-12-11 | Roke Manor Research | Monopulse generator |
US5918137A (en) | 1998-04-27 | 1999-06-29 | Spectrian, Inc. | MOS transistor with shield coplanar with gate electrode |
KR100296146B1 (ko) * | 1998-05-23 | 2001-08-07 | 오길록 | 소신호선형화장치 |
IL125022A (en) | 1998-06-21 | 2001-09-13 | Israel Bar David | Methods and apparatus for adaptive adjustment of feed-forward linearized amplifiers |
WO2000003478A1 (fr) * | 1998-07-08 | 2000-01-20 | Hitachi, Ltd. | Module amplificateur de puissance haute frequence |
US6312997B1 (en) | 1998-08-12 | 2001-11-06 | Micron Technology, Inc. | Low voltage high performance semiconductor devices and methods |
US6061555A (en) * | 1998-10-21 | 2000-05-09 | Parkervision, Inc. | Method and system for ensuring reception of a communications signal |
DE19902520B4 (de) * | 1999-01-22 | 2005-10-06 | Siemens Ag | Hybrid-Leistungs-MOSFET |
TW443039B (en) * | 1999-05-20 | 2001-06-23 | Ind Tech Res Inst | Sigma-delta modulator by using method of local nonlinear feedback loop |
DE19926715C1 (de) * | 1999-06-11 | 2001-01-18 | Siemens Ag | Verfahren und Vorrichtung zum Abschalten einer Kaskodenschaltung mit spannungsgesteuerten Halbleiterschaltern |
US6242978B1 (en) * | 1999-06-30 | 2001-06-05 | Harris Corporation | Method and apparatus for linearizing an amplifier |
US6584205B1 (en) * | 1999-08-26 | 2003-06-24 | American Technology Corporation | Modulator processing for a parametric speaker system |
ATE389286T1 (de) | 1999-11-29 | 2008-03-15 | Multispectral Solutions Inc | Ultrabreitband-datenvermittlungssystem |
US6300835B1 (en) * | 1999-12-10 | 2001-10-09 | Motorola, Inc. | Power amplifier core |
CA2294404C (en) * | 2000-01-07 | 2004-11-02 | Tadeuse A. Kwasniewski | Delta-sigma modulator for fractional-n frequency synthesis |
KR100841141B1 (ko) * | 2000-09-21 | 2008-06-24 | 캠브리지 세미컨덕터 리미티드 | 반도체 장치 및 반도체 장치의 형성 방법 |
US6750795B2 (en) * | 2001-01-12 | 2004-06-15 | Broadcom Corporation | Gain scaling for higher signal-to-noise ratios in multistage, multi-bit delta sigma modulators |
US6735419B2 (en) * | 2001-01-18 | 2004-05-11 | Motorola, Inc. | High efficiency wideband linear wireless power amplifier |
KR100489693B1 (ko) * | 2001-02-16 | 2005-05-17 | 인티그런트 테크놀로지즈(주) | 선형성이 향상된 증폭 회로 및 믹서 회로 |
US6503782B2 (en) * | 2001-03-02 | 2003-01-07 | Mississippi State University Research And Technology Corporation (Rtc) | Complementary accumulation-mode JFET integrated circuit topology using wide (>2eV) bandgap semiconductors |
US6600369B2 (en) | 2001-12-07 | 2003-07-29 | Motorola, Inc. | Wideband linear amplifier with predistortion error correction |
US20030227320A1 (en) * | 2002-06-05 | 2003-12-11 | Intel Corporation | Buffer, buffer operation and method of manufacture |
US7209715B2 (en) | 2002-07-30 | 2007-04-24 | Matsushita Electric Industrial Co., Ltd. | Power amplifying method, power amplifier, and communication apparatus |
KR20040104177A (ko) * | 2003-06-03 | 2004-12-10 | 삼성전기주식회사 | 시분할방식 전력증폭모듈 |
JP4262545B2 (ja) * | 2003-07-09 | 2009-05-13 | 三菱電機株式会社 | カスコード接続回路及びその集積回路 |
US7049669B2 (en) * | 2003-09-15 | 2006-05-23 | Infineon Technologies Ag | LDMOS transistor |
JP4868433B2 (ja) * | 2004-02-09 | 2012-02-01 | ソニー・エリクソン・モバイルコミュニケーションズ株式会社 | 歪み補償装置および歪み補償機能付き電力増幅装置 |
TWI224869B (en) * | 2004-03-25 | 2004-12-01 | Richtek Techohnology Corp | Apparatus for driving depletion type junction field effect transistor |
JP2007533180A (ja) * | 2004-04-09 | 2007-11-15 | オーディオアシクス エー/エス | シグマ・デルタ変調器 |
JP2006013753A (ja) * | 2004-06-24 | 2006-01-12 | Renesas Technology Corp | 無線通信システムおよび半導体集積回路 |
US7312481B2 (en) * | 2004-10-01 | 2007-12-25 | Texas Instruments Incorporated | Reliable high-voltage junction field effect transistor and method of manufacture therefor |
WO2006054148A1 (en) | 2004-11-16 | 2006-05-26 | Acco | An integrated ultra-wideband (uwb) pulse generator |
US7348826B1 (en) * | 2005-03-18 | 2008-03-25 | Qspeed Semiconductor Inc. | Composite field effect transistor |
US20060228850A1 (en) * | 2005-04-06 | 2006-10-12 | Pang-Yen Tsai | Pattern loading effect reduction for selective epitaxial growth |
US7253758B2 (en) * | 2005-07-20 | 2007-08-07 | Industrial Technology Research Institute | Third order sigma-delta modulator |
JP4821214B2 (ja) * | 2005-08-26 | 2011-11-24 | 三菱電機株式会社 | カスコード接続回路 |
US8008731B2 (en) | 2005-10-12 | 2011-08-30 | Acco | IGFET device having a RF capability |
RU2316334C2 (ru) | 2005-12-19 | 2008-02-10 | Медитек Индастриз ЛЛС | Способ активации утраченных двигательных функций, а также определения эффективности их восстановления при повреждении центральной нервной системы |
US7411231B2 (en) * | 2005-12-22 | 2008-08-12 | Analog Devices, Inc. | JFET with drain and/or source modification implant |
US7634240B2 (en) * | 2006-01-31 | 2009-12-15 | Motorola, Inc. | Method and apparatus for controlling a supply voltage to a power amplifier |
KR20070079724A (ko) * | 2006-02-03 | 2007-08-08 | 고상원 | 전력 증폭기의 선형화를 위한 전치 보정회로 |
US7554397B2 (en) * | 2006-05-22 | 2009-06-30 | Theta Microelectronics, Inc. | Highly linear low-noise amplifiers |
US7894772B2 (en) * | 2006-08-04 | 2011-02-22 | Axiom Microdevices, Inc. | Low distortion radio frequency (RF) limiter |
DE102006045312B3 (de) * | 2006-09-26 | 2008-05-21 | Siced Electronics Development Gmbh & Co. Kg | Halbleiteranordnung mit gekoppelten Sperrschicht-Feldeffekttransistoren |
US7636056B2 (en) * | 2007-05-22 | 2009-12-22 | Panasonic Corporation | Delta sigma modulator operating with different power source voltages |
US7679448B1 (en) * | 2007-08-30 | 2010-03-16 | Pmc-Sierra, Inc. | Continuous wave based bias method and apparatus for minimizing MOS transistor distortion |
US7522079B1 (en) * | 2007-09-06 | 2009-04-21 | National Semiconductor Corporation | Sigma-delta modulator with DAC resolution less than ADC resolution and increased tolerance of non-ideal integrators |
US7656229B2 (en) * | 2008-01-28 | 2010-02-02 | Qualcomm, Incorporated | Method and apparatus for reducing intermodulation distortion in an electronic device having an amplifier circuit |
US7969243B2 (en) * | 2009-04-22 | 2011-06-28 | Acco Semiconductor, Inc. | Electronic circuits including a MOSFET and a dual-gate JFET |
US7863645B2 (en) * | 2008-02-13 | 2011-01-04 | ACCO Semiconductor Inc. | High breakdown voltage double-gate semiconductor device |
US8170505B2 (en) * | 2008-07-30 | 2012-05-01 | Qualcomm Incorporated | Driver amplifier having a programmable output impedance adjustment circuit |
US7808415B1 (en) * | 2009-03-25 | 2010-10-05 | Acco Semiconductor, Inc. | Sigma-delta modulator including truncation and applications thereof |
US7952431B2 (en) * | 2009-08-28 | 2011-05-31 | Acco Semiconductor, Inc. | Linearization circuits and methods for power amplification |
-
2010
- 2010-01-13 US US12/686,573 patent/US7969243B2/en active Active
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- 2012-04-10 US US13/443,611 patent/US8400222B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03503944A (ja) * | 1988-04-21 | 1991-08-29 | アナログ デバイセス インコーポレーテッド | 静電放電現象によるjfetの損傷を減少するための手段 |
JPH0399466A (ja) * | 1989-09-12 | 1991-04-24 | Fujitsu Ltd | 半導体装置およびその製造方法 |
US5537078A (en) * | 1995-03-31 | 1996-07-16 | Linear Technology Corporation | Operational amplifier with JFET inputs having low input bias current and methods for using same |
JPH10107214A (ja) * | 1996-10-01 | 1998-04-24 | Masashi Mukogawa | 半導体装置 |
US20010050589A1 (en) * | 1999-01-22 | 2001-12-13 | Siemens Ag. | Hybrid power MOSFET for high current-carrying capacity |
JP2001237316A (ja) * | 2000-02-21 | 2001-08-31 | Hitachi Ltd | 無線通信装置 |
US20020105360A1 (en) * | 2001-01-19 | 2002-08-08 | Integrant Technologies Inc. | Single-ended differential circuit using complementary devices |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015041832A (ja) * | 2013-08-21 | 2015-03-02 | 三菱電機株式会社 | 電力増幅器 |
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US20110215871A1 (en) | 2011-09-08 |
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