JP2012517016A - オリガミセンサー - Google Patents
オリガミセンサー Download PDFInfo
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- JP2012517016A JP2012517016A JP2011549105A JP2011549105A JP2012517016A JP 2012517016 A JP2012517016 A JP 2012517016A JP 2011549105 A JP2011549105 A JP 2011549105A JP 2011549105 A JP2011549105 A JP 2011549105A JP 2012517016 A JP2012517016 A JP 2012517016A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/251—Colorimeters; Construction thereof
- G01N21/253—Colorimeters; Construction thereof for batch operation, i.e. multisample apparatus
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/6445—Measuring fluorescence polarisation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/645—Specially adapted constructive features of fluorimeters
- G01N21/6452—Individual samples arranged in a regular 2D-array, e.g. multiwell plates
- G01N21/6454—Individual samples arranged in a regular 2D-array, e.g. multiwell plates using an integrated detector array
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/75—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
- G01N21/77—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
- G01N21/7703—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator using reagent-clad optical fibres or optical waveguides
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/94—Investigating contamination, e.g. dust
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
- G01N23/04—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material
- G01N23/043—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material using fluoroscopic examination, with visual observation or video transmission of fluoroscopic images
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
- G01N23/04—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material
- G01N23/046—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material using tomography, e.g. computed tomography [CT]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/201—Filters in the form of arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/901—Assemblies of multiple devices comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K65/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element and at least one organic radiation-sensitive element, e.g. organic opto-couplers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/75—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
- G01N21/77—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
- G01N21/7703—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator using reagent-clad optical fibres or optical waveguides
- G01N2021/7706—Reagent provision
- G01N2021/7723—Swelling part, also for adsorption sensor, i.e. without chemical reaction
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/75—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
- G01N21/77—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
- G01N2021/7769—Measurement method of reaction-produced change in sensor
- G01N2021/7783—Transmission, loss
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/062—LED's
- G01N2201/0628—Organic LED [OLED]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Description
2 基板
3 光学素子
4 基板変形領域
5 変形部
Claims (15)
- 柔軟型基板(2)と、
前記柔軟型基板(2)上に配置された光学素子(3)と、
を備え、
前記柔軟型基板(2)が、前記光学素子(3)に作用する変形部(5)を備え、
前記変形部(5)が、少なくとも部分的に前記光学素子(3)を囲む基板変形領域(4)内に設けられることを特徴とする光学センサー(1)。 - 前記基板変形領域(4)が、前記基板(2)の変形を容易にするような、前記基板(2)から少なくとも部分的に切り離されているか、または少なくとも部分的に弱化されていることを特徴とする請求項1に記載の光学センサー。
- 前記光学素子(3)が、発光源(6)と、受光検出器(7)と、導光素子(8)と、からなる群から構成されることを特徴とする請求項1に記載の光学センサー。
- 前記発光源(6)が、有機発光ダイオード(OLED)または小分子有機発光ダイオード(SMOLED)を含むことを特徴とする請求項3に記載の光学センサー。
- 前記受光検出器(7)が、有機フォトダイオード(OPD)または小分子有機フォトダイオード(SMOPD)を含むことを特徴とする請求項3に記載の光学センサー。
- 前記センサーが、前記基板(2)上に配置された受光検出器(7)と発光源(6)とを備え、
前記検出器が、前記発光源(6)によって放出された光(23)に反応し、
前記発光源(6)と前記受光検出器(7)との少なくとも一方を傾けるように、前記基板(2)の前記変形部(5)が配置され、前記発光源(6)から、前記検出器(7)へ、光(23)が進むための光路(26)が設けられることを特徴とする請求項1に記載の光学センサー。 - 前記センサーが、導光素子(8)をさらに備え、
前記導光素子(8)が、少なくとも部分的に前記発光源(6)と前記検出器(7)との間に配置され、
前記導光素子(8)が、前記センサーを囲む流体中の検体の量に反応するセンサー活性材料を含むことを特徴とする請求項6に記載の光学センサー。 - 前記センサーを囲む流体中の検体の量に応じて、前記センサー活性材料が、前記導光素子(8)の導光特性を変えることを特徴とする請求項7に記載の光学センサー。
- 前記センサーを囲む流体中の検体の量に応じて、前記センサー活性材料が、前記導光素子(8)の反射特性を変えることを特徴とする請求項8に記載の光学センサー。
- 前記発光源(6)と前記受光検出器(7)との少なくとも一方が、前記導光素子(8)と隣接し、
前記センサーを囲む流体中の検体の量に応じて、前記センサー活性材料が、前記導光素子(8)の形状及び/または大きさを変え、前記発光源(6)及び/または前記受光検出器(7)の傾斜角を変えることを特徴とする請求項8に記載の光学センサー。 - 前記導光素子(8)が、検体を、前記センサー活性材料に輸送するための流体輸送システムを備えることを特徴とする請求項7から10のいずれか一項に記載の光学センサー。
- 前記発光源(6)と前記検出器(7)との少なくとも一方の光学面が、光学的に有効である前記基板(2)に向けられていることを特徴とする請求項6に記載の光学センサー。
- 光学的に有効である前記基板(2)が、偏光フィルタを形成することを特徴とする請求項12に記載の光学センサー。
- 導光素子(8)が、少なくとも部分的に前記発光源(6)と前記検出器(7)との間に配置され、
前記導光素子(8)が、光学的に活性化された場合に、ランダム偏光のルミネセンス光(39)を放出するルミネセント染料(32)を含み、ルミネセンス光(39)の特徴が、前記センサーを囲む流体中の検体の量に応じて決まることを特徴とする請求項13に記載の光学センサー。 - 柔軟型基板(2)と、
前記柔軟型基板(2)上に配置された光学素子(3)と、
を備え、
前記柔軟型基板(2)が、前記光学素子(3)に作用する変形部(5)を備え、
発光源(6)と検出器(7)との少なくとも一方の光学面が、光学的に有効である前記基板(2)に向けられていることを特徴とする光学センサー(1)。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP09152056 | 2009-02-04 | ||
EP09152056.9 | 2009-02-04 | ||
PCT/NL2010/050048 WO2010090519A2 (en) | 2009-02-04 | 2010-02-03 | Origami sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2012517016A true JP2012517016A (ja) | 2012-07-26 |
Family
ID=42101574
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011549105A Pending JP2012517016A (ja) | 2009-02-04 | 2010-02-03 | オリガミセンサー |
Country Status (6)
Country | Link |
---|---|
US (1) | US20120056205A1 (ja) |
EP (1) | EP2394154B1 (ja) |
JP (1) | JP2012517016A (ja) |
KR (1) | KR20110118661A (ja) |
CN (1) | CN102388303B (ja) |
WO (1) | WO2010090519A2 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8314487B2 (en) * | 2009-12-18 | 2012-11-20 | Infineon Technologies Ag | Flange for semiconductor die |
US8907560B2 (en) * | 2011-05-12 | 2014-12-09 | Universal Display Corporation | Dynamic OLED lighting |
JP5682544B2 (ja) * | 2011-11-28 | 2015-03-11 | トヨタ自動車株式会社 | 雨滴検出装置 |
US20140021491A1 (en) * | 2012-07-18 | 2014-01-23 | Carsem (M) Sdn. Bhd. | Multi-compound molding |
DE102012220056A1 (de) | 2012-11-02 | 2014-02-13 | Osram Opto Semiconductors Gmbh | Organisches optoelektronisches bauelement und verfahren zum betrieb des organischen optoelektronischen bauelements |
DE102012220050A1 (de) | 2012-11-02 | 2014-05-08 | Osram Opto Semiconductors Gmbh | Organisches optoelektronisches Bauelement und Verfahren zum Betrieb des organischen optoelektronischen Bauelements |
DE102012220020A1 (de) * | 2012-11-02 | 2014-05-08 | Osram Opto Semiconductors Gmbh | Organisches optoelektronisches bauelement und verfahren zum betrieb des organischen optoelektronischen bauelements |
DE102013219011A1 (de) | 2013-09-20 | 2015-03-26 | Osram Gmbh | Sensoreinheit zur Lichtsteuerung |
CN104635252A (zh) * | 2015-02-13 | 2015-05-20 | 四川中测辐射科技有限公司 | 基于fpc的半导体探测器阵列及制作方法 |
EP3163633B1 (en) * | 2015-10-28 | 2021-09-01 | Nokia Technologies Oy | A light-based sensor apparatus and associated methods |
DE102016221303A1 (de) * | 2016-10-28 | 2018-05-03 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Knickbares substrat mit bauelement |
CN106872583B (zh) * | 2017-01-16 | 2020-04-17 | 业成科技(成都)有限公司 | 超声波感测器 |
US10290512B2 (en) * | 2017-05-17 | 2019-05-14 | Nanya Technology Corporation | Semiconductor structure having bump on tilting upper corner surface |
US11335868B2 (en) | 2019-01-11 | 2022-05-17 | Chongqing Boe Optoelectronics Technology Co., Ltd. | Flexible substrate, method of preparing the same, and display panel |
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2010
- 2010-02-03 US US13/148,040 patent/US20120056205A1/en not_active Abandoned
- 2010-02-03 KR KR1020117018479A patent/KR20110118661A/ko not_active Application Discontinuation
- 2010-02-03 JP JP2011549105A patent/JP2012517016A/ja active Pending
- 2010-02-03 CN CN2010800154813A patent/CN102388303B/zh not_active Expired - Fee Related
- 2010-02-03 WO PCT/NL2010/050048 patent/WO2010090519A2/en active Application Filing
- 2010-02-03 EP EP10704005.7A patent/EP2394154B1/en not_active Not-in-force
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EP2394154B1 (en) | 2018-04-04 |
KR20110118661A (ko) | 2011-10-31 |
WO2010090519A2 (en) | 2010-08-12 |
CN102388303A (zh) | 2012-03-21 |
US20120056205A1 (en) | 2012-03-08 |
CN102388303B (zh) | 2013-11-06 |
EP2394154A2 (en) | 2011-12-14 |
WO2010090519A3 (en) | 2010-09-30 |
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