JP2012514329A - 両方の側に波長変換器を有する光生成デバイス - Google Patents

両方の側に波長変換器を有する光生成デバイス Download PDF

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Publication number
JP2012514329A
JP2012514329A JP2011543557A JP2011543557A JP2012514329A JP 2012514329 A JP2012514329 A JP 2012514329A JP 2011543557 A JP2011543557 A JP 2011543557A JP 2011543557 A JP2011543557 A JP 2011543557A JP 2012514329 A JP2012514329 A JP 2012514329A
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Japan
Prior art keywords
photoluminescent element
semiconductor
wavelength
light
photoluminescent
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Japanese (ja)
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JP2012514329A5 (https=
Inventor
エー．レザーデール キャサリン
ジェイ．アウダーカーク アンドリュー
ダブリュ．ケリー トミー
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication of JP2012514329A publication Critical patent/JP2012514329A/ja
Publication of JP2012514329A5 publication Critical patent/JP2012514329A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
JP2011543557A 2008-12-24 2009-12-10 両方の側に波長変換器を有する光生成デバイス Withdrawn JP2012514329A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14069708P 2008-12-24 2008-12-24
US61/140,697 2008-12-24
PCT/US2009/067489 WO2010074987A2 (en) 2008-12-24 2009-12-10 Light generating device having double-sided wavelength converter

Publications (2)

Publication Number Publication Date
JP2012514329A true JP2012514329A (ja) 2012-06-21
JP2012514329A5 JP2012514329A5 (https=) 2013-01-31

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JP2011543557A Withdrawn JP2012514329A (ja) 2008-12-24 2009-12-10 両方の側に波長変換器を有する光生成デバイス

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US (1) US8350462B2 (https=)
EP (1) EP2380216A2 (https=)
JP (1) JP2012514329A (https=)
KR (1) KR20110105842A (https=)
CN (1) CN102318089A (https=)
TW (1) TW201029237A (https=)
WO (1) WO2010074987A2 (https=)

Cited By (3)

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JP2017513225A (ja) * 2014-04-01 2017-05-25 サントル ナショナル ドゥ ラ ルシェルシュ シアンティフィク 半導体画素、このような画素のマトリクス、このような画素を製造するための半導体構造、およびそれらの製作方法
JP2019534564A (ja) * 2016-10-25 2019-11-28 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス半導体素子の製造方法およびオプトエレクトロニクス半導体素子
JP2022543821A (ja) * 2019-08-06 2022-10-14 プレッシー・セミコンダクターズ・リミテッド Ｌｅｄアレイおよびｌｅｄアレイを形成する方法

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KR20120016261A (ko) 2009-05-05 2012-02-23 쓰리엠 이노베이티브 프로퍼티즈 컴파니 인듐 공핍 메커니즘을 이용하여 인듐-함유 기판 상에 성장된 반도체 디바이스
KR20120015337A (ko) 2009-05-05 2012-02-21 쓰리엠 이노베이티브 프로퍼티즈 컴파니 Ｌｅｄ에서 사용하기 위한 재방출 반도체 캐리어 디바이스 및 제조 방법
JP2012532454A (ja) 2009-06-30 2012-12-13 スリーエム イノベイティブ プロパティズ カンパニー カドミウム非含有の再発光半導体構成体
CN102473816B (zh) 2009-06-30 2015-03-11 3M创新有限公司 基于电流拥挤调节颜色的电致发光装置
EP2449856A1 (en) 2009-06-30 2012-05-09 3M Innovative Properties Company White light electroluminescent devices with adjustable color temperature
SG178386A1 (en) * 2009-08-31 2012-04-27 3M Innovative Properties Co Projection and display system
US9431585B2 (en) * 2010-09-29 2016-08-30 Koninklijke Philips Electronics N.V. Wavelength converted light emitting device
JP5864367B2 (ja) * 2011-06-16 2016-02-17 日東電工株式会社 蛍光接着シート、蛍光体層付発光ダイオード素子、発光ダイオード装置およびそれらの製造方法
KR102008349B1 (ko) * 2013-03-13 2019-08-07 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
JP6129706B2 (ja) * 2013-09-27 2017-05-17 Ｊｘ金属株式会社 化合物半導体素子の製造方法およびエッチング液
CN105679904B (zh) * 2016-01-29 2022-04-01 姜全忠 光泵浦发光器件及单片集成光泵浦发光器件的制备方法
US10707265B2 (en) * 2017-05-31 2020-07-07 Iinolux Corporation Display devices
DE102018101089A1 (de) 2018-01-18 2019-07-18 Osram Opto Semiconductors Gmbh Epitaktisches konversionselement, verfahren zur herstellung eines epitaktischen konversionselements, strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterchips
US10585311B2 (en) * 2018-02-22 2020-03-10 Vestel Elektronik Sanayi Ve Ticaret A.S. Display device
US10868213B2 (en) * 2018-06-26 2020-12-15 Lumileds Llc LED utilizing internal color conversion with light extraction enhancements
CN109065572B (zh) * 2018-07-20 2019-11-26 武汉华星光电半导体显示技术有限公司 Oled显示面板及oled显示装置

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JP3378465B2 (ja) * 1997-05-16 2003-02-17 株式会社東芝 発光装置
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US6563133B1 (en) 2000-08-09 2003-05-13 Ziptronix, Inc. Method of epitaxial-like wafer bonding at low temperature and bonded structure
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US7402831B2 (en) 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
EP1929532A1 (en) * 2005-09-19 2008-06-11 Koninklijke Philips Electronics N.V. Variable color light emitting device and method for controlling the same
DE102006024165A1 (de) 2006-05-23 2007-11-29 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Optoelektronischer Halbleiterchip mit einem Wellenlängenkonversionsstoff sowie optoelektronisches Halbleiterbauelement mit einem solchen Halbleiterchip und Verfahren zur Herstellung des optoelektronischen Halbleiterchips
JP4291837B2 (ja) 2006-08-30 2009-07-08 株式会社沖データ 投写型表示装置および画像形成装置
DE102006059612A1 (de) 2006-12-12 2008-06-19 Forschungsverbund Berlin E.V. Halbleiterbauelement und Verfahren zu dessen Herstellung
KR100856282B1 (ko) 2007-03-05 2008-09-03 삼성전기주식회사 광자 리사이클링을 이용한 광자결정 발광소자
US8941566B2 (en) 2007-03-08 2015-01-27 3M Innovative Properties Company Array of luminescent elements
EP2206164A2 (en) 2007-10-08 2010-07-14 3M Innovative Properties Company Light emitting diode with bonded semiconductor wavelength converter
US7915627B2 (en) * 2007-10-17 2011-03-29 Intematix Corporation Light emitting device with phosphor wavelength conversion
EP2232590A4 (en) 2007-12-10 2013-12-25 3M Innovative Properties Co SEMICONDUCTOR LIGHT ARRANGEMENT AND METHOD FOR THE PRODUCTION THEREOF
US20100295075A1 (en) 2007-12-10 2010-11-25 3M Innovative Properties Company Down-converted light emitting diode with simplified light extraction
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JP2011523212A (ja) 2008-06-05 2011-08-04 スリーエム イノベイティブ プロパティズ カンパニー 半導体波長変換器が接合された発光ダイオード
US20090321758A1 (en) * 2008-06-25 2009-12-31 Wen-Huang Liu Led with improved external light extraction efficiency
CN102124577A (zh) 2008-06-26 2011-07-13 3M创新有限公司 制造光提取器的方法
KR20110031953A (ko) 2008-06-26 2011-03-29 쓰리엠 이노베이티브 프로퍼티즈 컴파니 반도체 광 변환 구조체

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017513225A (ja) * 2014-04-01 2017-05-25 サントル ナショナル ドゥ ラ ルシェルシュ シアンティフィク 半導体画素、このような画素のマトリクス、このような画素を製造するための半導体構造、およびそれらの製作方法
JP2019534564A (ja) * 2016-10-25 2019-11-28 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス半導体素子の製造方法およびオプトエレクトロニクス半導体素子
US11018283B2 (en) 2016-10-25 2021-05-25 Osram Oled Gmbh Method of producing optoelectronic semiconductor components and an optoelectronic semiconductor component
JP7003124B2 (ja) 2016-10-25 2022-01-20 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング オプトエレクトロニクス半導体素子の製造方法およびオプトエレクトロニクス半導体素子
US11557700B2 (en) 2016-10-25 2023-01-17 Osram Oled Gmbh Method of producing optoelectronic semiconductor components and an optoelectronic semiconductor component
US12349523B2 (en) 2016-10-25 2025-07-01 Osram Oled Gmbh Method of producing optoelectronic semiconductor components and an optoelectronic semiconductor component
JP2022543821A (ja) * 2019-08-06 2022-10-14 プレッシー・セミコンダクターズ・リミテッド Ｌｅｄアレイおよびｌｅｄアレイを形成する方法
JP7387871B2 (ja) 2019-08-06 2023-11-28 プレッシー・セミコンダクターズ・リミテッド Ｌｅｄアレイおよびｌｅｄアレイを形成する方法

Also Published As

Publication number Publication date
US8350462B2 (en) 2013-01-08
KR20110105842A (ko) 2011-09-27
CN102318089A (zh) 2012-01-11
EP2380216A2 (en) 2011-10-26
TW201029237A (en) 2010-08-01
WO2010074987A3 (en) 2010-08-19
US20110260601A1 (en) 2011-10-27
WO2010074987A2 (en) 2010-07-01

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