KR20110105842A - 양면 파장 변환기를 갖는 광 발생 소자 - Google Patents

양면 파장 변환기를 갖는 광 발생 소자 Download PDF

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Publication number
KR20110105842A
KR20110105842A KR1020117017260A KR20117017260A KR20110105842A KR 20110105842 A KR20110105842 A KR 20110105842A KR 1020117017260 A KR1020117017260 A KR 1020117017260A KR 20117017260 A KR20117017260 A KR 20117017260A KR 20110105842 A KR20110105842 A KR 20110105842A
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KR
South Korea
Prior art keywords
semiconductor
photoluminescent
photoluminescent element
wavelength
light
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Ceased
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KR1020117017260A
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English (en)
Korean (ko)
Inventor
캐서린 에이 리더데일
앤드류 제이 오더커크
토미 더블유 켈리
Original Assignee
쓰리엠 이노베이티브 프로퍼티즈 컴파니
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Publication of KR20110105842A publication Critical patent/KR20110105842A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials

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  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Devices (AREA)
KR1020117017260A 2008-12-24 2009-12-10 양면 파장 변환기를 갖는 광 발생 소자 Ceased KR20110105842A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14069708P 2008-12-24 2008-12-24
US61/140,697 2008-12-24

Publications (1)

Publication Number Publication Date
KR20110105842A true KR20110105842A (ko) 2011-09-27

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ID=42115309

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117017260A Ceased KR20110105842A (ko) 2008-12-24 2009-12-10 양면 파장 변환기를 갖는 광 발생 소자

Country Status (7)

Country Link
US (1) US8350462B2 (https=)
EP (1) EP2380216A2 (https=)
JP (1) JP2012514329A (https=)
KR (1) KR20110105842A (https=)
CN (1) CN102318089A (https=)
TW (1) TW201029237A (https=)
WO (1) WO2010074987A2 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140112177A (ko) * 2013-03-13 2014-09-23 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
KR20180131329A (ko) * 2017-05-31 2018-12-10 이노럭스 코포레이션 디스플레이 장치
KR20210014781A (ko) * 2016-10-25 2021-02-09 오스람 옵토 세미컨덕터스 게엠베하 광전자 반도체 컴포넌트들을 제조하기 위한 방법 및 광전자 반도체 컴포넌트

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120016261A (ko) 2009-05-05 2012-02-23 쓰리엠 이노베이티브 프로퍼티즈 컴파니 인듐 공핍 메커니즘을 이용하여 인듐-함유 기판 상에 성장된 반도체 디바이스
KR20120015337A (ko) 2009-05-05 2012-02-21 쓰리엠 이노베이티브 프로퍼티즈 컴파니 Ｌｅｄ에서 사용하기 위한 재방출 반도체 캐리어 디바이스 및 제조 방법
JP2012532454A (ja) 2009-06-30 2012-12-13 スリーエム イノベイティブ プロパティズ カンパニー カドミウム非含有の再発光半導体構成体
CN102473816B (zh) 2009-06-30 2015-03-11 3M创新有限公司 基于电流拥挤调节颜色的电致发光装置
EP2449856A1 (en) 2009-06-30 2012-05-09 3M Innovative Properties Company White light electroluminescent devices with adjustable color temperature
SG178386A1 (en) * 2009-08-31 2012-04-27 3M Innovative Properties Co Projection and display system
US9431585B2 (en) * 2010-09-29 2016-08-30 Koninklijke Philips Electronics N.V. Wavelength converted light emitting device
JP5864367B2 (ja) * 2011-06-16 2016-02-17 日東電工株式会社 蛍光接着シート、蛍光体層付発光ダイオード素子、発光ダイオード装置およびそれらの製造方法
JP6129706B2 (ja) * 2013-09-27 2017-05-17 Ｊｘ金属株式会社 化合物半導体素子の製造方法およびエッチング液
FR3019380B1 (fr) * 2014-04-01 2017-09-01 Centre Nat Rech Scient Pixel semiconducteur, matrice de tels pixels, structure semiconductrice pour la realisation de tels pixels et leurs procedes de fabrication
CN105679904B (zh) * 2016-01-29 2022-04-01 姜全忠 光泵浦发光器件及单片集成光泵浦发光器件的制备方法
DE102018101089A1 (de) 2018-01-18 2019-07-18 Osram Opto Semiconductors Gmbh Epitaktisches konversionselement, verfahren zur herstellung eines epitaktischen konversionselements, strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterchips
US10585311B2 (en) * 2018-02-22 2020-03-10 Vestel Elektronik Sanayi Ve Ticaret A.S. Display device
US10868213B2 (en) * 2018-06-26 2020-12-15 Lumileds Llc LED utilizing internal color conversion with light extraction enhancements
CN109065572B (zh) * 2018-07-20 2019-11-26 武汉华星光电半导体显示技术有限公司 Oled显示面板及oled显示装置
GB2586580B (en) * 2019-08-06 2022-01-12 Plessey Semiconductors Ltd LED array and method of forming a LED array

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1260407A (en) 1917-03-31 1918-03-26 Raymond Brothers Impact Pulverizer Company Pulverizing apparatus.
US5915193A (en) 1995-05-18 1999-06-22 Tong; Qin-Yi Method for the cleaning and direct bonding of solids
JP3378465B2 (ja) * 1997-05-16 2003-02-17 株式会社東芝 発光装置
TW480744B (en) 2000-03-14 2002-03-21 Lumileds Lighting Bv Light-emitting diode, lighting device and method of manufacturing same
US6737801B2 (en) 2000-06-28 2004-05-18 The Fox Group, Inc. Integrated color LED chip
US6563133B1 (en) 2000-08-09 2003-05-13 Ziptronix, Inc. Method of epitaxial-like wafer bonding at low temperature and bonded structure
JP2002170989A (ja) 2000-12-04 2002-06-14 Sharp Corp 窒化物系化合物半導体発光素子
CA2427559A1 (en) * 2002-05-15 2003-11-15 Sumitomo Electric Industries, Ltd. White color light emitting device
US6841802B2 (en) * 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
US20050156510A1 (en) * 2004-01-21 2005-07-21 Chua Janet B.Y. Device and method for emitting output light using group IIB element selenide-based and group IIA element gallium sulfide-based phosphor materials
US7361938B2 (en) 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
US7402831B2 (en) 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
EP1929532A1 (en) * 2005-09-19 2008-06-11 Koninklijke Philips Electronics N.V. Variable color light emitting device and method for controlling the same
DE102006024165A1 (de) 2006-05-23 2007-11-29 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Optoelektronischer Halbleiterchip mit einem Wellenlängenkonversionsstoff sowie optoelektronisches Halbleiterbauelement mit einem solchen Halbleiterchip und Verfahren zur Herstellung des optoelektronischen Halbleiterchips
JP4291837B2 (ja) 2006-08-30 2009-07-08 株式会社沖データ 投写型表示装置および画像形成装置
DE102006059612A1 (de) 2006-12-12 2008-06-19 Forschungsverbund Berlin E.V. Halbleiterbauelement und Verfahren zu dessen Herstellung
KR100856282B1 (ko) 2007-03-05 2008-09-03 삼성전기주식회사 광자 리사이클링을 이용한 광자결정 발광소자
US8941566B2 (en) 2007-03-08 2015-01-27 3M Innovative Properties Company Array of luminescent elements
EP2206164A2 (en) 2007-10-08 2010-07-14 3M Innovative Properties Company Light emitting diode with bonded semiconductor wavelength converter
US7915627B2 (en) * 2007-10-17 2011-03-29 Intematix Corporation Light emitting device with phosphor wavelength conversion
EP2232590A4 (en) 2007-12-10 2013-12-25 3M Innovative Properties Co SEMICONDUCTOR LIGHT ARRANGEMENT AND METHOD FOR THE PRODUCTION THEREOF
US20100295075A1 (en) 2007-12-10 2010-11-25 3M Innovative Properties Company Down-converted light emitting diode with simplified light extraction
US8299701B2 (en) * 2007-12-27 2012-10-30 Ge Lighting Solutions Llc Lighting device having illumination, backlighting and display applications
JP2011523212A (ja) 2008-06-05 2011-08-04 スリーエム イノベイティブ プロパティズ カンパニー 半導体波長変換器が接合された発光ダイオード
US20090321758A1 (en) * 2008-06-25 2009-12-31 Wen-Huang Liu Led with improved external light extraction efficiency
CN102124577A (zh) 2008-06-26 2011-07-13 3M创新有限公司 制造光提取器的方法
KR20110031953A (ko) 2008-06-26 2011-03-29 쓰리엠 이노베이티브 프로퍼티즈 컴파니 반도체 광 변환 구조체

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140112177A (ko) * 2013-03-13 2014-09-23 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
KR20210014781A (ko) * 2016-10-25 2021-02-09 오스람 옵토 세미컨덕터스 게엠베하 광전자 반도체 컴포넌트들을 제조하기 위한 방법 및 광전자 반도체 컴포넌트
KR20180131329A (ko) * 2017-05-31 2018-12-10 이노럭스 코포레이션 디스플레이 장치

Also Published As

Publication number Publication date
US8350462B2 (en) 2013-01-08
CN102318089A (zh) 2012-01-11
EP2380216A2 (en) 2011-10-26
TW201029237A (en) 2010-08-01
WO2010074987A3 (en) 2010-08-19
JP2012514329A (ja) 2012-06-21
US20110260601A1 (en) 2011-10-27
WO2010074987A2 (en) 2010-07-01

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