CN102318089A - 具有双面波长转换器的光产生装置 - Google Patents

具有双面波长转换器的光产生装置 Download PDF

Info

Publication number
CN102318089A
CN102318089A CN200980156984XA CN200980156984A CN102318089A CN 102318089 A CN102318089 A CN 102318089A CN 200980156984X A CN200980156984X A CN 200980156984XA CN 200980156984 A CN200980156984 A CN 200980156984A CN 102318089 A CN102318089 A CN 102318089A
Authority
CN
China
Prior art keywords
semiconductor
photoluminescent element
wavelength
light
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN200980156984XA
Other languages
English (en)
Chinese (zh)
Inventor
凯瑟琳·A·莱瑟达勒
安德鲁·J·乌德科克
托米·W·凯利
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of CN102318089A publication Critical patent/CN102318089A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/813Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8511Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512Wavelength conversion materials
    • H10H20/8513Wavelength conversion materials having two or more wavelength conversion materials

Landscapes

  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Devices (AREA)
CN200980156984XA 2008-12-24 2009-12-10 具有双面波长转换器的光产生装置 Pending CN102318089A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14069708P 2008-12-24 2008-12-24
US61/140,697 2008-12-24
PCT/US2009/067489 WO2010074987A2 (en) 2008-12-24 2009-12-10 Light generating device having double-sided wavelength converter

Publications (1)

Publication Number Publication Date
CN102318089A true CN102318089A (zh) 2012-01-11

Family

ID=42115309

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980156984XA Pending CN102318089A (zh) 2008-12-24 2009-12-10 具有双面波长转换器的光产生装置

Country Status (7)

Country Link
US (1) US8350462B2 (https=)
EP (1) EP2380216A2 (https=)
JP (1) JP2012514329A (https=)
KR (1) KR20110105842A (https=)
CN (1) CN102318089A (https=)
TW (1) TW201029237A (https=)
WO (1) WO2010074987A2 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105679904A (zh) * 2016-01-29 2016-06-15 姜全忠 光泵浦发光器件及单片集成光泵浦发光器件的制备方法
CN110187555A (zh) * 2018-02-22 2019-08-30 伟视达电子工贸有限公司 显示设备
CN112951895A (zh) * 2017-05-31 2021-06-11 群创光电股份有限公司 显示装置

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120016261A (ko) 2009-05-05 2012-02-23 쓰리엠 이노베이티브 프로퍼티즈 컴파니 인듐 공핍 메커니즘을 이용하여 인듐-함유 기판 상에 성장된 반도체 디바이스
KR20120015337A (ko) 2009-05-05 2012-02-21 쓰리엠 이노베이티브 프로퍼티즈 컴파니 Led에서 사용하기 위한 재방출 반도체 캐리어 디바이스 및 제조 방법
JP2012532454A (ja) 2009-06-30 2012-12-13 スリーエム イノベイティブ プロパティズ カンパニー カドミウム非含有の再発光半導体構成体
CN102473816B (zh) 2009-06-30 2015-03-11 3M创新有限公司 基于电流拥挤调节颜色的电致发光装置
EP2449856A1 (en) 2009-06-30 2012-05-09 3M Innovative Properties Company White light electroluminescent devices with adjustable color temperature
SG178386A1 (en) * 2009-08-31 2012-04-27 3M Innovative Properties Co Projection and display system
US9431585B2 (en) * 2010-09-29 2016-08-30 Koninklijke Philips Electronics N.V. Wavelength converted light emitting device
JP5864367B2 (ja) * 2011-06-16 2016-02-17 日東電工株式会社 蛍光接着シート、蛍光体層付発光ダイオード素子、発光ダイオード装置およびそれらの製造方法
KR102008349B1 (ko) * 2013-03-13 2019-08-07 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
JP6129706B2 (ja) * 2013-09-27 2017-05-17 Jx金属株式会社 化合物半導体素子の製造方法およびエッチング液
FR3019380B1 (fr) * 2014-04-01 2017-09-01 Centre Nat Rech Scient Pixel semiconducteur, matrice de tels pixels, structure semiconductrice pour la realisation de tels pixels et leurs procedes de fabrication
DE102016220915A1 (de) 2016-10-25 2018-04-26 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen und optoelektronisches Halbleiterbauteil
DE102018101089A1 (de) 2018-01-18 2019-07-18 Osram Opto Semiconductors Gmbh Epitaktisches konversionselement, verfahren zur herstellung eines epitaktischen konversionselements, strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterchips
US10868213B2 (en) * 2018-06-26 2020-12-15 Lumileds Llc LED utilizing internal color conversion with light extraction enhancements
CN109065572B (zh) * 2018-07-20 2019-11-26 武汉华星光电半导体显示技术有限公司 Oled显示面板及oled显示装置
GB2586580B (en) * 2019-08-06 2022-01-12 Plessey Semiconductors Ltd LED array and method of forming a LED array

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1260407A (en) 1917-03-31 1918-03-26 Raymond Brothers Impact Pulverizer Company Pulverizing apparatus.
US5915193A (en) 1995-05-18 1999-06-22 Tong; Qin-Yi Method for the cleaning and direct bonding of solids
JP3378465B2 (ja) * 1997-05-16 2003-02-17 株式会社東芝 発光装置
TW480744B (en) 2000-03-14 2002-03-21 Lumileds Lighting Bv Light-emitting diode, lighting device and method of manufacturing same
US6737801B2 (en) 2000-06-28 2004-05-18 The Fox Group, Inc. Integrated color LED chip
US6563133B1 (en) 2000-08-09 2003-05-13 Ziptronix, Inc. Method of epitaxial-like wafer bonding at low temperature and bonded structure
JP2002170989A (ja) 2000-12-04 2002-06-14 Sharp Corp 窒化物系化合物半導体発光素子
CA2427559A1 (en) * 2002-05-15 2003-11-15 Sumitomo Electric Industries, Ltd. White color light emitting device
US6841802B2 (en) * 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
US20050156510A1 (en) * 2004-01-21 2005-07-21 Chua Janet B.Y. Device and method for emitting output light using group IIB element selenide-based and group IIA element gallium sulfide-based phosphor materials
US7361938B2 (en) 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
US7402831B2 (en) 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
EP1929532A1 (en) * 2005-09-19 2008-06-11 Koninklijke Philips Electronics N.V. Variable color light emitting device and method for controlling the same
DE102006024165A1 (de) 2006-05-23 2007-11-29 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Optoelektronischer Halbleiterchip mit einem Wellenlängenkonversionsstoff sowie optoelektronisches Halbleiterbauelement mit einem solchen Halbleiterchip und Verfahren zur Herstellung des optoelektronischen Halbleiterchips
JP4291837B2 (ja) 2006-08-30 2009-07-08 株式会社沖データ 投写型表示装置および画像形成装置
DE102006059612A1 (de) 2006-12-12 2008-06-19 Forschungsverbund Berlin E.V. Halbleiterbauelement und Verfahren zu dessen Herstellung
KR100856282B1 (ko) 2007-03-05 2008-09-03 삼성전기주식회사 광자 리사이클링을 이용한 광자결정 발광소자
US8941566B2 (en) 2007-03-08 2015-01-27 3M Innovative Properties Company Array of luminescent elements
EP2206164A2 (en) 2007-10-08 2010-07-14 3M Innovative Properties Company Light emitting diode with bonded semiconductor wavelength converter
US7915627B2 (en) * 2007-10-17 2011-03-29 Intematix Corporation Light emitting device with phosphor wavelength conversion
EP2232590A4 (en) 2007-12-10 2013-12-25 3M Innovative Properties Co SEMICONDUCTOR LIGHT ARRANGEMENT AND METHOD FOR THE PRODUCTION THEREOF
US20100295075A1 (en) 2007-12-10 2010-11-25 3M Innovative Properties Company Down-converted light emitting diode with simplified light extraction
US8299701B2 (en) * 2007-12-27 2012-10-30 Ge Lighting Solutions Llc Lighting device having illumination, backlighting and display applications
JP2011523212A (ja) 2008-06-05 2011-08-04 スリーエム イノベイティブ プロパティズ カンパニー 半導体波長変換器が接合された発光ダイオード
US20090321758A1 (en) * 2008-06-25 2009-12-31 Wen-Huang Liu Led with improved external light extraction efficiency
CN102124577A (zh) 2008-06-26 2011-07-13 3M创新有限公司 制造光提取器的方法
KR20110031953A (ko) 2008-06-26 2011-03-29 쓰리엠 이노베이티브 프로퍼티즈 컴파니 반도체 광 변환 구조체

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105679904A (zh) * 2016-01-29 2016-06-15 姜全忠 光泵浦发光器件及单片集成光泵浦发光器件的制备方法
CN112951895A (zh) * 2017-05-31 2021-06-11 群创光电股份有限公司 显示装置
CN110187555A (zh) * 2018-02-22 2019-08-30 伟视达电子工贸有限公司 显示设备
CN110187555B (zh) * 2018-02-22 2022-12-20 伟视达电子工贸有限公司 显示设备

Also Published As

Publication number Publication date
US8350462B2 (en) 2013-01-08
KR20110105842A (ko) 2011-09-27
EP2380216A2 (en) 2011-10-26
TW201029237A (en) 2010-08-01
WO2010074987A3 (en) 2010-08-19
JP2012514329A (ja) 2012-06-21
US20110260601A1 (en) 2011-10-27
WO2010074987A2 (en) 2010-07-01

Similar Documents

Publication Publication Date Title
US8865493B2 (en) Method of making double-sided wavelength converter and light generating device using same
US8350462B2 (en) Light generating device having double-sided wavelength converter
US8941566B2 (en) Array of luminescent elements
US9196653B2 (en) Pixelated LED
US8455904B2 (en) Non-radiatively pumped wavelength converter
US8455903B2 (en) Non-radiatively pumped wavelength converter
JP2025011107A (ja) 高色域フォトルミネッセンス波長変換白色発光デバイス
US8748911B2 (en) Stable light source

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20120111