JP2012514317A5 - - Google Patents

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Publication number
JP2012514317A5
JP2012514317A5 JP2011542724A JP2011542724A JP2012514317A5 JP 2012514317 A5 JP2012514317 A5 JP 2012514317A5 JP 2011542724 A JP2011542724 A JP 2011542724A JP 2011542724 A JP2011542724 A JP 2011542724A JP 2012514317 A5 JP2012514317 A5 JP 2012514317A5
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Japan
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recesses
spacer
depth
gate electrode
electrode structure
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JP2011542724A
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English (en)
Japanese (ja)
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JP5795260B2 (ja
JP2012514317A (ja
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Priority claimed from DE102008063427A external-priority patent/DE102008063427B4/de
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JP2011542724A 2008-12-31 2009-12-29 段階的な形状の構造を有する埋め込み歪誘起材質を伴うトランジスタ Active JP5795260B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102008063427A DE102008063427B4 (de) 2008-12-31 2008-12-31 Verfahren zum selektiven Herstellen eines Transistors mit einem eingebetteten verformungsinduzierenden Material mit einer graduell geformten Gestaltung
DE102008063427.1 2008-12-31
US12/640,765 2009-12-17
US12/640,765 US8202777B2 (en) 2008-12-31 2009-12-17 Transistor with an embedded strain-inducing material having a gradually shaped configuration
PCT/EP2009/009306 WO2010076017A1 (en) 2008-12-31 2009-12-29 A transistor with an embedded strain inducing material having a gradually shaped configuration

Publications (3)

Publication Number Publication Date
JP2012514317A JP2012514317A (ja) 2012-06-21
JP2012514317A5 true JP2012514317A5 (enrdf_load_stackoverflow) 2013-02-07
JP5795260B2 JP5795260B2 (ja) 2015-10-14

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JP2011542724A Active JP5795260B2 (ja) 2008-12-31 2009-12-29 段階的な形状の構造を有する埋め込み歪誘起材質を伴うトランジスタ

Country Status (6)

Country Link
US (2) US8202777B2 (enrdf_load_stackoverflow)
JP (1) JP5795260B2 (enrdf_load_stackoverflow)
KR (1) KR101537079B1 (enrdf_load_stackoverflow)
CN (1) CN102362344B (enrdf_load_stackoverflow)
DE (1) DE102008063427B4 (enrdf_load_stackoverflow)
WO (1) WO2010076017A1 (enrdf_load_stackoverflow)

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