JP2012513092A - 凝縮性ガス冷却システム - Google Patents
凝縮性ガス冷却システム Download PDFInfo
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- JP2012513092A JP2012513092A JP2011542329A JP2011542329A JP2012513092A JP 2012513092 A JP2012513092 A JP 2012513092A JP 2011542329 A JP2011542329 A JP 2011542329A JP 2011542329 A JP2011542329 A JP 2011542329A JP 2012513092 A JP2012513092 A JP 2012513092A
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- JP
- Japan
- Prior art keywords
- workpiece
- gas
- workpiece support
- operating temperature
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- Prior art date
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- 238000001816 cooling Methods 0.000 title claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 32
- 238000005468 ion implantation Methods 0.000 claims abstract description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 6
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 235000011187 glycerol Nutrition 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 abstract description 56
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 239000003570 air Substances 0.000 abstract description 4
- 229910052786 argon Inorganic materials 0.000 abstract description 3
- 239000001307 helium Substances 0.000 abstract description 3
- 229910052734 helium Inorganic materials 0.000 abstract description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 abstract description 3
- 239000001257 hydrogen Substances 0.000 abstract description 3
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 3
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 3
- 238000001179 sorption measurement Methods 0.000 abstract description 3
- 238000003795 desorption Methods 0.000 abstract description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 22
- 150000002500 ions Chemical class 0.000 description 14
- 238000010884 ion-beam technique Methods 0.000 description 11
- 230000006978 adaptation Effects 0.000 description 10
- 239000007787 solid Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 239000012530 fluid Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 239000012528 membrane Substances 0.000 description 3
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001793 charged compounds Chemical class 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/002—Cooling arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
Abstract
Description
α=(Tr−Ti)/(Ts−Ti)
ここで、Trは反射した分子(すなわち、固体の表面から反射した後のガス分子)の温度、
Tiは入射する分子(すなわち、固体の表面に当たる前のガス分子)の温度、及び、
Tsは固体の表面の温度である。
Claims (18)
- ワークピースを処理する間に、該ワークピースから熱を伝達する方法であって、前記ワークピースはワークピース支持体上に載置され、
前記方法は、
a.前記処理のための動作温度範囲を決定するステップと、
b.該動作温度範囲で所望の範囲内の蒸気圧を有するガスを選択するステップと、
c.前記ワークピースの背面と前記ワークピース支持体の上面との間の空間内に前記ガスを供給するステップと、
d.前記ワークピースを処理するステップと、を有する、熱を伝達する方法。 - 前記ワークピースを処理する前に、前記ガスが前記ボリューム内で平衡状態に達するのを待つステップを、さらに有する、請求項1に記載の方法。
- 前記ワークピースの前記背面上及び前記ワークピース支持体の前記上面上に、液体の膜を生成する、請求項2に記載の方法。
- 前記ワークピース支持体上に前記ワークピースを保持するために力を加え、前記所望の範囲の前記蒸気圧は、前記ワークピースを保持する前記力より小さい対抗力を生成する、請求項1に記載の方法。
- 前記ガスを前記蒸気圧に等しい圧力で供給する、請求項1に記載の方法。
- 前記処理したワークピースを除去する前に、前記ワークピース支持体を冷却するステップを、さらに有する、請求項1に記載の方法。
- 前記動作温度範囲は0℃と50℃との間であり、前記選択したガスは水蒸気を含む、請求項1に記載の方法。
- 前記蒸気圧は10Torrと50Torrとの間である、請求項7に記載の方法。
- 前記動作温度範囲は−50℃より低く、前記選択したガスはアンモニアを含む、請求項1に記載の方法。
- 前記動作温度範囲は100℃より高く、前記選択したガスはグリセリンを含む、請求項1に記載の方法。
- 前記処理はイオン注入を含む、請求項1に記載の方法。
- 所定の動作温度範囲でワークピースを処理する間に、該ワークピースから熱を逃がして伝達するシステムであって、
前記システムは、
a.ワークピース支持体であって、該ワークピース支持体の上面が前記ワークピースの背面に接触するように、該ワークピース支持体上に前記ワークピースを置くためのワークピース支持体と、
b.前記ワークピースに力を加えて、前記ワークピースを前記ワークピース支持体上に保持する手段と、
c.前記ワークピースの前記背面及び前記ワークピース支持体の前記上面により規定される空間にガスを供給する導管と、
d.前記動作温度範囲で蒸気圧を有する前記ガスを保持する容器と、を備え、
前記蒸気圧は、前記ワークピースを保持する手段により加えられる前記力より小さい対抗力を、前記ワークピースに対して生成する、熱を伝達するシステム。 - 前記動作温度範囲は0℃と50℃との間であり、前記ガスは水蒸気を含む、請求項12に記載のシステム。
- 前記動作温度範囲は−50℃より低く、前記ガスはアンモニアを含む、請求項12に記載のシステム。
- 前記動作温度範囲は100℃より高く、前記ガスはグリセリンを含む、請求項12に記載のシステム。
- 前記導管は前記ワークピース支持体内に配置され、前記ガスは前記ワークピース支持体を通過して前記空間に到達する、請求項12に記載のシステム。
- 前記容器と前記空間との間に配置された質量流量コントローラ又は圧力調整器を、さらに備える、請求項12に記載のシステム。
- 前記質量流量コントローラは、前記蒸気圧に等しい圧力で前記ガスを供給する、請求項17に記載のシステム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/339,235 US20100155026A1 (en) | 2008-12-19 | 2008-12-19 | Condensible gas cooling system |
US12/339,235 | 2008-12-19 | ||
PCT/US2009/068002 WO2010080390A2 (en) | 2008-12-19 | 2009-12-15 | Condensible gas cooling system |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012513092A true JP2012513092A (ja) | 2012-06-07 |
JP5602148B2 JP5602148B2 (ja) | 2014-10-08 |
Family
ID=42264369
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011542329A Active JP5602148B2 (ja) | 2008-12-19 | 2009-12-15 | 凝縮性ガス冷却システム |
Country Status (6)
Country | Link |
---|---|
US (1) | US20100155026A1 (ja) |
JP (1) | JP5602148B2 (ja) |
KR (1) | KR20110126593A (ja) |
CN (1) | CN102246276B (ja) |
TW (1) | TWI495422B (ja) |
WO (1) | WO2010080390A2 (ja) |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS63115338A (ja) * | 1986-11-04 | 1988-05-19 | Hitachi Ltd | 低温ドライエツチング方法及びその装置 |
JPS6484558A (en) * | 1987-09-28 | 1989-03-29 | Hitachi Ltd | Gas pressure controller for ion implantating device |
JPH04216619A (ja) * | 1990-12-18 | 1992-08-06 | Fujitsu Ltd | 半導体製造装置 |
JPH04248238A (ja) * | 1991-01-25 | 1992-09-03 | Fujitsu Ltd | イオンビーム照射装置及びイオンビーム照射方法 |
JPH04311035A (ja) * | 1991-04-10 | 1992-11-02 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH09219439A (ja) * | 1996-02-13 | 1997-08-19 | Kobe Steel Ltd | 基板処理装置 |
JP2001044108A (ja) * | 1999-07-29 | 2001-02-16 | Nikon Corp | 荷電粒子線露光装置及びそれを利用した半導体装置の製造方法 |
JP2003110186A (ja) * | 2001-09-30 | 2003-04-11 | Shibaura Mechatronics Corp | 半導体レーザモジュール及び半導体レーザ励起固体レーザ装置 |
JP2004173486A (ja) * | 2002-10-28 | 2004-06-17 | Aisin Seiki Co Ltd | 黒鉛質ブラシおよび黒鉛質ブラシを備えたモータ |
JP2007227655A (ja) * | 2006-02-23 | 2007-09-06 | Ion Engineering Research Institute Corp | 半導体素子の製造方法 |
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US4542298A (en) * | 1983-06-09 | 1985-09-17 | Varian Associates, Inc. | Methods and apparatus for gas-assisted thermal transfer with a semiconductor wafer |
US4833567A (en) * | 1986-05-30 | 1989-05-23 | Digital Equipment Corporation | Integral heat pipe module |
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-
2008
- 2008-12-19 US US12/339,235 patent/US20100155026A1/en not_active Abandoned
-
2009
- 2009-12-15 WO PCT/US2009/068002 patent/WO2010080390A2/en active Application Filing
- 2009-12-15 KR KR1020117016364A patent/KR20110126593A/ko not_active Application Discontinuation
- 2009-12-15 JP JP2011542329A patent/JP5602148B2/ja active Active
- 2009-12-15 CN CN200980149410XA patent/CN102246276B/zh active Active
- 2009-12-18 TW TW098143699A patent/TWI495422B/zh active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS63115338A (ja) * | 1986-11-04 | 1988-05-19 | Hitachi Ltd | 低温ドライエツチング方法及びその装置 |
JPS6484558A (en) * | 1987-09-28 | 1989-03-29 | Hitachi Ltd | Gas pressure controller for ion implantating device |
JPH04216619A (ja) * | 1990-12-18 | 1992-08-06 | Fujitsu Ltd | 半導体製造装置 |
JPH04248238A (ja) * | 1991-01-25 | 1992-09-03 | Fujitsu Ltd | イオンビーム照射装置及びイオンビーム照射方法 |
JPH04311035A (ja) * | 1991-04-10 | 1992-11-02 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH09219439A (ja) * | 1996-02-13 | 1997-08-19 | Kobe Steel Ltd | 基板処理装置 |
JP2001044108A (ja) * | 1999-07-29 | 2001-02-16 | Nikon Corp | 荷電粒子線露光装置及びそれを利用した半導体装置の製造方法 |
JP2003110186A (ja) * | 2001-09-30 | 2003-04-11 | Shibaura Mechatronics Corp | 半導体レーザモジュール及び半導体レーザ励起固体レーザ装置 |
JP2004173486A (ja) * | 2002-10-28 | 2004-06-17 | Aisin Seiki Co Ltd | 黒鉛質ブラシおよび黒鉛質ブラシを備えたモータ |
JP2007227655A (ja) * | 2006-02-23 | 2007-09-06 | Ion Engineering Research Institute Corp | 半導体素子の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20110126593A (ko) | 2011-11-23 |
TWI495422B (zh) | 2015-08-01 |
WO2010080390A2 (en) | 2010-07-15 |
TW201029559A (en) | 2010-08-01 |
US20100155026A1 (en) | 2010-06-24 |
JP5602148B2 (ja) | 2014-10-08 |
CN102246276B (zh) | 2013-08-28 |
WO2010080390A3 (en) | 2010-09-16 |
CN102246276A (zh) | 2011-11-16 |
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|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |