JP2012512540A - 太陽電池用電極とその製造方法および太陽電池 - Google Patents
太陽電池用電極とその製造方法および太陽電池 Download PDFInfo
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- JP2012512540A JP2012512540A JP2011542007A JP2011542007A JP2012512540A JP 2012512540 A JP2012512540 A JP 2012512540A JP 2011542007 A JP2011542007 A JP 2011542007A JP 2011542007 A JP2011542007 A JP 2011542007A JP 2012512540 A JP2012512540 A JP 2012512540A
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- electrode
- solar cell
- binder polymer
- binder
- printing
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/245—Reinforcing conductive patterns made by printing techniques or by other techniques for applying conductive pastes, inks or powders; Reinforcing other conductive patterns by such techniques
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
- H05K1/095—Dispersed materials, e.g. conductive pastes or inks for polymer thick films, i.e. having a permanent organic polymeric binder
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
【選択図】図1
Description
2Lのフラスコにブチルカルビトールアセテート(BCA)100gを入れた後、攪拌しながら100℃に維持した。ここに、メチルメタクリレート(MMA)45.5g、スチレンモノマー(SM)8.5g、ヒドロキシエチルメタクリレート(HEMA)30g、メチルアクリル酸(MAA)11g、および過酸化ベンジル5gを溶解させた溶液を3時間にわたって滴加した。1時間放置した後、0.15gの過酸化ベンジルを20gのBCAに溶かした溶液を後添して発熱状態を確認し、発熱しなければ反応が完結したものと判断して5,000の重量平均分子量、Tg87℃のポリ(メチルメタクリレート−メタクリル酸)樹脂バインダー1を製造した。
2Lのフラスコにブチルカルビトールアセテート(BCA)100gを入れた後、攪拌しながら100℃に維持した。ここに、メチルメタクリレート(MMA)21.5g、アクリル酸ブチルモノマー(BAM)30g、スチレンモノマー(SM)8.5g、ヒドロキシエチルメタクリレート(HEMA)20g、メチルアクリル酸(MAA)15g、および過酸化ベンジル5gを溶解させた溶液を3時間にわたって滴加した。1時間放置した後、0.15gの過酸化ベンジルを20gのBCAに溶かした溶液を後添して発熱状態を確認し、発熱しなければ反応が完結したものと判断して5,000の重量平均分子量、Tg26℃のポリ(メチルメタクリレート−メタクリル酸)樹脂バインダー2を製造した。
2Lのフラスコにブチルカルビトールアセテート(BCA)100gを入れた後、攪拌しながら100℃に維持した。ここに、メチルメタクリレート(MMA)5g、アクリル酸ブチルモノマー(BAM)57g、スチレンモノマー(SM)6g、ヒドロキシエチルメタクリレート(HEMA)15g、アクリル酸(AA)7gおよび過酸化ベンジル10gを溶解させた溶液を3時間にわたって滴加した。1時間放置した後、0.15gの過酸化ベンジルを20gのBCAに溶かした溶液を後添して発熱状態を確認し、発熱しなければ反応が完結したものと判断して5,000の重量平均分子量、Tg−19℃のポリ(メチルメタクリレート−メタクリル酸)樹脂バインダー3を製造した。
20 低Tgバインダー高分子電極ペースト下部印刷層
30 高Tgバインダー高分子電極ペースト上部印刷層
Claims (14)
- バインダー高分子、希釈溶剤、金属電極材料およびガラス粉末を含む太陽電池電極用組成物を用いて印刷法によって太陽電池用電極を製造する方法において、
基板の上部に、基板と電極との接触特性のために前記バインダー高分子が低Tgバインダー高分子である電極用組成物で印刷する段階と、
アスペクト比の向上のために前記バインダーが高Tgバインダー高分子である組成物で補強印刷する段階と、を含むことを特徴とする、太陽電池用電極の製造方法。 - 前記低Tgバインダー高分子のTgは、−40〜10℃の範囲内であることを特徴とする、請求項1に記載の太陽電池用電極の製造方法。
- 前記高Tgバインダー高分子のTgは、50〜120℃の範囲内であることを特徴とする、請求項1に記載の太陽電池用電極の製造方法。
- 前記低Tgバインダー高分子は、エチルアクリレート(EA)、ヒドロキシエチルアクリレート(HEA)、ヒドロキシプロピルアクリレート(HPA)、2−エチルヘキシルアクリレート(2−EHA)、ブチルアクリレート(BA)、ステアリルメタクリレート(SMA)、ビニルブチルエーテル(VBE)、ビニルエチルエーテル(VEE)、ビニルイソブチルエーテル(VIE)およびビニルメチルエーテル(VME)の中から選択される少なくとも1種であることを特徴とする、請求項1に記載の太陽電池用電極の製造方法。
- 前記高Tgバインダー高分子は、アクリル酸(AA)、メチルアクリル酸(MAA)、メチルメタクリレート(MMA)、エチルメチルアクリレート(EMA)、イソブチルメタクリレート(i−BMA)、2−ヒドロキシエチルメチルアクリレート(2−HEMA)、スチレンモノマー(SM)、グリシジルメタクリレート(GMA)、アクリルアミド(AAM)、アクリロニトリル(AN)およびメタクリロニトリル(MAN)などで合成したアクリルバインダーの他に、エチルセルロース(Ethyl cellulose)、ヒドロキシエチルセルロース(Hydroxyethyl cellulose)、ヒドロキシプロピルセルロース(Hydroxypropyl cellulose)およびヒドロキシエチルヒドロキシプロピルセルロース(Hydroxyethylhydroxypropyl cellulose)のセルロース誘導体の中から選択される少なくとも1種であることを特徴とする、請求項1に記載の太陽電池用電極の製造方法。
- 低Tgバインダー高分子を適用した組成物で印刷する段階と、高Tgバインダー高分子を適用した組成物で補強印刷する段階との間に、中Tgバインダー高分子を適用した組成物で印刷する段階を更に含むことを特徴とする、請求項1に記載の太陽電池用電極の製造方法。
- 前記中Tgバインダー高分子のTgは、低Tgバインダー高分子のTgと高Tgバインダー高分子のTgとの間の値であることを特徴とする、請求項6に記載の太陽電池用電極の製造方法。
- 前記印刷法は、グラビアオフセット印刷法であることを特徴とする、請求項1〜7のいずれか1項に記載の太陽電池用電極の製造方法。
- 前記高Tgバインダー高分子を適用した組成物で補強印刷する段階を経て焼成した後の電極アスペクト(高さ/幅)は、0.3〜1.0であることを特徴とする、請求項1〜7のいずれか1項に記載の太陽電池用電極の製造方法。
- 請求項1〜7のいずれか1項の製造方法で製造された太陽電池用電極であって、
電極が、30〜100μmの幅、30〜100μmの高さおよび0.3〜1.0のアスペクト比(高さ/幅)を持つことを特徴とする、太陽電池用電極。 - 基板の上部にバス電極およびフィンガー電極を備えた太陽電池用基板であって、
前記バス電極および前記フィンガー電極の少なくとも一つは、低Tg高分子バインダーを用いた導電性ペースト組成物で印刷された下部印刷層と、高Tg高分子バインダーを用いた導電性ペースト組成物で印刷された上部印刷層と、を含む電極が焼成されて形成されたことを特徴とする、太陽電池用基板。 - 前記バス電極および前記フィンガー電極の少なくとも一つは、30〜100μmの幅、30〜100μmの高さおよび0.3〜1.0のアスペクト比(高さ/幅)を持つことを特徴とする、請求項11に記載の太陽電池用基板。
- 基板の上部にバス電極およびフィンガー電極を備え、基板の下部に背面電極を備えた太陽電池において、
前記バス電極および前記フィンガー電極の少なくとも一つが請求項1〜7のいずれか1項の太陽電池用電極の製造方法を用いて製造され、太陽電池のセル効率が17%以上であることを特徴とする、太陽電池。 - 請求項11または12の太陽電池基板を備えた太陽電池であって、セル効率が17%以上であることを特徴とする、太陽電池。
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KR10-2008-0128511 | 2008-12-17 | ||
PCT/KR2009/007555 WO2010071363A2 (ko) | 2008-12-17 | 2009-12-17 | 태양전지용 전극, 그 제조방법 및 태양전지 |
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JP2013149617A (ja) * | 2012-01-17 | 2013-08-01 | E I Du Pont De Nemours & Co | 半導体デバイス製造における微細線高アスペクト比スクリーン印刷のための導電性ペースト |
JP2014515160A (ja) * | 2011-03-29 | 2014-06-26 | サン ケミカル コーポレイション | ワックスチクソトロープ剤を含有する高いアスペクト比のスクリーン印刷可能な厚膜ペースト組成物 |
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KR20150117762A (ko) | 2014-04-10 | 2015-10-21 | 제일모직주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
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