JP2012509583A5 - - Google Patents

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Publication number
JP2012509583A5
JP2012509583A5 JP2011536869A JP2011536869A JP2012509583A5 JP 2012509583 A5 JP2012509583 A5 JP 2012509583A5 JP 2011536869 A JP2011536869 A JP 2011536869A JP 2011536869 A JP2011536869 A JP 2011536869A JP 2012509583 A5 JP2012509583 A5 JP 2012509583A5
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JP
Japan
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edge
region
semiconductor laser
emitting semiconductor
groove
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JP2011536869A
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English (en)
Japanese (ja)
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JP2012509583A (ja
JP5529151B2 (ja
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Priority claimed from DE102008058435A external-priority patent/DE102008058435B4/de
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Publication of JP2012509583A5 publication Critical patent/JP2012509583A5/ja
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Publication of JP5529151B2 publication Critical patent/JP5529151B2/ja
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JP2011536869A 2008-11-21 2009-11-19 端面発光型半導体レーザ Active JP5529151B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008058435A DE102008058435B4 (de) 2008-11-21 2008-11-21 Kantenemittierender Halbleiterlaser
DE102008058435.5 2008-11-21
PCT/EP2009/065488 WO2010057955A2 (de) 2008-11-21 2009-11-19 Kantenemittierender halbleiterlaser

Publications (3)

Publication Number Publication Date
JP2012509583A JP2012509583A (ja) 2012-04-19
JP2012509583A5 true JP2012509583A5 (https=) 2013-01-10
JP5529151B2 JP5529151B2 (ja) 2014-06-25

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Family Applications (1)

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JP2011536869A Active JP5529151B2 (ja) 2008-11-21 2009-11-19 端面発光型半導体レーザ

Country Status (5)

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US (1) US8363688B2 (https=)
EP (1) EP2347479A2 (https=)
JP (1) JP5529151B2 (https=)
DE (1) DE102008058435B4 (https=)
WO (1) WO2010057955A2 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009056387B9 (de) * 2009-10-30 2020-05-07 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser mit einem Phasenstrukturbereich zur Selektion lateraler Lasermoden
DE102011100175B4 (de) * 2011-05-02 2021-12-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserlichtquelle mit einer Stegwellenleiterstruktur und einer Modenfilterstruktur
DE102011075502A1 (de) 2011-05-09 2012-11-15 Forschungsverbund Berlin E.V. Breitstreifen-Diodenlaser mit hoher Effizienz und geringer Fernfelddivergenz
DE102012103549B4 (de) 2012-04-23 2020-06-18 Osram Opto Semiconductors Gmbh Halbleiterlaserlichtquelle mit einem kantenemittierenden Halbleiterkörper und Licht streuenden Teilbereich
DE102012110613A1 (de) * 2012-11-06 2014-05-08 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
US11837838B1 (en) * 2020-01-31 2023-12-05 Freedom Photonics Llc Laser having tapered region
CN113690731A (zh) * 2020-05-19 2021-11-23 通快两合公司 具有微结构的半导体盘形激光器
WO2022261511A1 (en) 2021-06-10 2022-12-15 Freedom Photonics Llc Designs for lateral current control in optical amplifiers and lasers
CN113675723B (zh) * 2021-08-23 2023-07-28 中国科学院半导体研究所 连续激射的微腔量子级联激光器及制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5029283A (https=) * 1973-07-19 1975-03-25
US5247536A (en) * 1990-07-25 1993-09-21 Kabushiki Kaisha Toshiba Semiconductor laser distributed feedback laser including mode interrupt means
US6122299A (en) * 1997-12-31 2000-09-19 Sdl, Inc. Angled distributed reflector optical device with enhanced light confinement
US6810054B2 (en) * 2000-03-31 2004-10-26 Presstek, Inc. Mode-limiting diode laser structure
JP4785327B2 (ja) 2000-06-15 2011-10-05 フラウンホッファー−ゲゼルシャフト ツァー フェーデルング デア アンゲバンテン フォルシュング エー ファー 半導体レーザー用レーザー共振器及びレーザー共振器を製造する方法
US20030219053A1 (en) * 2002-05-21 2003-11-27 The Board Of Trustees Of The University Of Illinois Index guided laser structure
JP3857225B2 (ja) * 2002-12-19 2006-12-13 富士通株式会社 半導体レーザ及びその製造方法
US7139300B2 (en) * 2003-08-19 2006-11-21 Coherent, Inc. Wide-stripe single-mode diode-laser
JP2005327783A (ja) * 2004-05-12 2005-11-24 Sony Corp 半導体レーザ
JP4721924B2 (ja) * 2005-12-09 2011-07-13 富士通株式会社 光導波路を伝搬する光と回折格子とを結合させた光素子
JP2007234724A (ja) * 2006-02-28 2007-09-13 Canon Inc 垂直共振器型面発光レーザ、該垂直共振器型面発光レーザにおける二次元フォトニック結晶の製造方法
DE102008025922B4 (de) 2008-05-30 2020-02-06 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser mit Phasenstruktur

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