JP2012508463A - 二相汚染物質除去媒体の組成及び適用 - Google Patents
二相汚染物質除去媒体の組成及び適用 Download PDFInfo
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- JP2012508463A JP2012508463A JP2011535582A JP2011535582A JP2012508463A JP 2012508463 A JP2012508463 A JP 2012508463A JP 2011535582 A JP2011535582 A JP 2011535582A JP 2011535582 A JP2011535582 A JP 2011535582A JP 2012508463 A JP2012508463 A JP 2012508463A
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- 230000008020 evaporation Effects 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
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- 229910052736 halogen Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002540 isothiocyanates Chemical group 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
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- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
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- 125000000864 peroxy group Chemical group O(O*)* 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
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- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920006112 polar polymer Polymers 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229920000371 poly(diallyldimethylammonium chloride) polymer Polymers 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 239000006254 rheological additive Substances 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- 230000008685 targeting Effects 0.000 description 1
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- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 229910021654 trace metal Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 239000003190 viscoelastic substance Substances 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
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Abstract
【選択図】図1G
Description
PRE=(洗浄前の数−洗浄後の数)/洗浄前の数......(1)
SiN粒子を伴う基板は、粒子の数を測定し、基板洗浄後の基板と比較するための粒子マップを得るために、予めスキャンされる。もし粒子が、基板洗浄前には粒子を有さなかった基板上の場所に現れたならば、それらの粒子は、「追加分」と見なされる。「追加分」は、新しい場所に移動された基板表面上の汚染物質、又は基板表面上に堆積された洗浄材料由来の粒子(汚染物質若しくは不純物)でありえる。
Claims (25)
- 半導体基板表面から汚染物質を除去するための洗浄材料であって、
洗浄液と、
前記洗浄液中に分散された複数の固体成分であって、前記半導体基板表面から前記汚染物質を除去するために前記基板表面上の少なくとも一部の汚染物質と相互作用する複数の固体成分と、
分子量が10,000g/molを超えるポリマ化合物のポリマであって、前記ポリマは、前記洗浄液に可溶になり、前記洗浄液及び前記複数の固体成分とともに前記洗浄材料を形成し、長いポリマ鎖を有する前記可溶化されたポリマは、前記洗浄液中の固体成分及び汚染物質を捕えて閉じ込める、ポリマと、
を備える洗浄材料。 - 請求項1に記載の洗浄材料であって、
前記洗浄材料は、前記パターン化基板を覆う前記洗浄材料に力が作用されたときに、前記パターン化基板の前記表面上のデバイス特徴の周囲で変形し、前記洗浄材料は、前記パターン化基板の前記表面上のデバイス特徴を実質的に損傷させることなく前記表面から前記汚染物質を除去するために、前記表面に適用される、洗浄材料。 - 請求項1に記載の洗浄材料であって、
前記固体成分は、約1%から約20%までの間の範囲の重量パーセントのカルボン酸で作成される、洗浄材料。 - 請求項1に記載の洗浄材料であって、
前記複数の固体成分は、4を超える炭素数を有する脂肪酸である、洗浄材料。 - 請求項4に記載の洗浄材料であって、
前記脂肪酸は、ラウリン酸、パルミチン酸、ステアリン酸、オレイン酸、リノール酸、リノレン酸、アラキドン酸、ガドレイン酸、エルカ酸、酪酸、カプロン酸、カプリル酸、ミリスチン酸、マルガリン酸、ベヘン酸、リグノセリン酸、ミリストレイン酸、パルミトレイン酸、ネルボン酸、パリナリン酸、ティムノドン酸、ブラシジン酸、クルパノドン酸、及びこれらの混合からなる群より選択される、洗浄材料。 - 請求項1に記載の洗浄材料であって、
前記洗浄液は、水、イソプロピルアルコール(IPA)、ジメチルスルホキシド(DMSO)、ジメチルホルムアミド(DMF)、又はこれらの組み合わせからなる群より選択される、洗浄材料。 - 請求項1に記載の洗浄材料であって、
前記ポリマ化合物は、
ポリアクリルアミド(PAM)、Carbopol 940TM及びCarbopol 941TMなどのポリアクリル酸(PAA)、PAMとPAAとのコポリマ、ポリ−(N,N−ジメチル−アクリルアミド)(PDMAAm)、ポリ−(N−イソプロピル−アクリルアミド)(PIPAAm)、ポリメタクリル酸(PMAA)、ポリメタクリルアミド(PMAAm)などの、アクリルポリマと、
ポリエチレンイミン(PEI)、ポリエチレンオキシド(PEO)、ポリプロピレンオキシド(PPO)などの、ポリイミン及びオキシドと、
ポリビニルアルコール(PVA)、ポリエチレンスルホン酸(PESA)、ポリビニルアミン(PVAm)、ポリビニル−ピロリドン(PVP)、ポリ−4−ビニルピリジン(P4VP)などの、ビニルポリマと、
メチルセルロース(MC)、エチル−セルロース(EC)、ヒドロキシエチルセルロース(HEC)、カルボキシメチルセルロース(CMC)、キトサン、ポリ(エピクロルヒドリン−co−エチレンジアミン)、ポリ(ジメチルアミン−co−エピクロルヒドリン−co−エチレンジアミン)などの、セルロース誘導体と、
アカシア(アラビアゴム)、寒天及びアガロース、ヘパリン、グアーゴム、キサンタンゴムなどの、多糖類と、
卵白、コラーゲン、グルテンなどの、タンパク質と
からなる親水性のポリマ群より選択される、洗浄材料。 - 請求項1に記載の洗浄材料であって、
前記ポリマ化合物の前記ポリマは、凝集剤として機能する、洗浄材料。 - 請求項1に記載の洗浄材料であって、
前記ポリマ化合物の前記ポリマの分子量は、約0.1Mg/molから約100Mg/molまでの間である、洗浄材料。 - 請求項1に記載の洗浄材料であって、
前記洗浄材料中における前記ポリマの重量パーセントは、約0.001%から約10%までの間である、洗浄材料。 - 請求項1に記載の洗浄材料であって、更に、
前記洗浄液中における前記ポリマ及び前記固体成分の分散又は湿潤化を助けるための表面活性剤を備える洗浄材料。 - 請求項11に記載の洗浄材料であって、
前記表面活性剤は、ドデシル硫酸アンモニウム(ADS)である、洗浄材料。 - 請求項1に記載の洗浄材料であって、
液体、ゾル、又はゲルの形態をとる流体である洗浄材料。 - 請求項1に記載の洗浄材料であって、
前記洗浄材料のpH値は、フロントエンド用途の場合は約7から約12までの間である、洗浄材料。 - 請求項1に記載の洗浄材料であって、
前記洗浄材料のpH値は、バックエンド用途の場合は約1から約7までの間である、洗浄材料。 - 請求項1に記載の洗浄材料であって、
前記ポリマは、前記洗浄材料中の不純物を捕らえて閉じ込める、洗浄材料。 - 半導体基板の基板表面から汚染物質を取り除くための装置であって、
前記半導体基板を保持するための基板サポートアセンブリと、
前記基板表面から前記汚染物質を取り除くために洗浄材料を適用するための洗浄材料吐出ヘッドであって、前記洗浄材料は、洗浄液と、複数の固体成分と、分子量が10,000g/molを超えるポリマ化合物のポリマとを含み、前記複数の固体成分及び前記ポリマは、前記洗浄液中に分散され、前記複数の固体成分は、前記半導体基板表面から前記汚染物質を除去するために、前記基板表面上の少なくとも一部の汚染物質と相互作用し、前記ポリマは、前記洗浄液に可溶になり、長いポリマ鎖を有する前記可溶化されたポリマは、前記洗浄液中の固体成分及び汚染物質を捕えて閉じ込める、洗浄材料吐出ヘッドと、
を備える装置。 - 請求項17に記載の装置であって、
前記洗浄材料吐出ヘッドは、前記吐出ヘッド下の前記洗浄材料に下向きの力を及ぼす、装置。 - 請求項17に記載の装置であって、
前記半導体基板は、前記洗浄材料吐出ヘッド下で移動し、前記移動は、前記洗浄材料と前記基板の前記表面との間にせん断力を導入する、装置。 - 請求項17に記載の装置であって、
前記洗浄材料吐出ヘッドは、前記半導体基板の前記基板表面の近くに保持される、装置。 - 請求項17に記載の装置であって、更に、
前記基板表面の近くに保持され、前記洗浄材料によって除去された汚染物質とともに前記洗浄材料を前記基板表面からすすいで前記基板表面を乾燥させる上側すすぎ・乾燥ヘッドを備える装置。 - 請求項21に記載の装置であって、更に、
前記基板表面の近くに保持され、前記半導体基板の下側基板表面をすすいで乾燥させる少なくとも1つの下側すすぎ・乾燥ヘッドを備える装置。 - 半導体基板の基板表面から汚染物質を取り除くための方法であって、
前記半導体基板を洗浄装置内に置くことと、
前記基板表面から前記汚染物質を取り除くために洗浄材料を吐出することであって、前記洗浄材料は、洗浄液と、複数の固体成分と、分子量が10,000g/molを超えるポリマ化合物のポリマとを含み、前記複数の固体成分及び前記ポリマは、前記洗浄液中に分散され、前記複数の固体成分は、前記半導体基板表面から前記汚染物質を除去するために、前記基板表面上の少なくとも一部の汚染物質と相互作用し、前記ポリマは、前記洗浄液に可溶になり、長いポリマ鎖を有する前記可溶化されたポリマは、前記洗浄液中の固体成分及び汚染物質を捕えて閉じ込める、ことと、
を備える方法。 - 請求項23に記載の方法であって、更に、
前記洗浄材料によって前記基板表面から除去された前記汚染物質とともに前記洗浄材料を前記基板表面からすすぐために、前記洗浄材料によって覆われている前記基板表面上の一部分にすすぎ液を吐出することを備える方法。 - 請求項24に記載の方法であって、更に、
前記すすぎ液、前記洗浄材料、及び前記洗浄材料中の前記汚染物質を前記基板表面から除去することを備える方法。
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