JP2012253233A5 - - Google Patents

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Publication number
JP2012253233A5
JP2012253233A5 JP2011125448A JP2011125448A JP2012253233A5 JP 2012253233 A5 JP2012253233 A5 JP 2012253233A5 JP 2011125448 A JP2011125448 A JP 2011125448A JP 2011125448 A JP2011125448 A JP 2011125448A JP 2012253233 A5 JP2012253233 A5 JP 2012253233A5
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JP
Japan
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JP2011125448A
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JP5801609B2 (ja
JP2012253233A (ja
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Priority to JP2011125448A priority Critical patent/JP5801609B2/ja
Priority claimed from JP2011125448A external-priority patent/JP5801609B2/ja
Priority to US13/486,783 priority patent/US8638533B2/en
Publication of JP2012253233A publication Critical patent/JP2012253233A/ja
Publication of JP2012253233A5 publication Critical patent/JP2012253233A5/ja
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Publication of JP5801609B2 publication Critical patent/JP5801609B2/ja
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JP2011125448A 2011-06-03 2011-06-03 保護回路素子 Expired - Fee Related JP5801609B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011125448A JP5801609B2 (ja) 2011-06-03 2011-06-03 保護回路素子
US13/486,783 US8638533B2 (en) 2011-06-03 2012-06-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011125448A JP5801609B2 (ja) 2011-06-03 2011-06-03 保護回路素子

Publications (3)

Publication Number Publication Date
JP2012253233A JP2012253233A (ja) 2012-12-20
JP2012253233A5 true JP2012253233A5 (ja) 2014-04-10
JP5801609B2 JP5801609B2 (ja) 2015-10-28

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ID=47261530

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011125448A Expired - Fee Related JP5801609B2 (ja) 2011-06-03 2011-06-03 保護回路素子

Country Status (2)

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US (1) US8638533B2 (ja)
JP (1) JP5801609B2 (ja)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8854103B2 (en) * 2012-03-28 2014-10-07 Infineon Technologies Ag Clamping circuit
US20140334048A1 (en) * 2013-05-07 2014-11-13 Rf Micro Devices, Inc. Esd protection circuit
CN103633071A (zh) * 2013-11-15 2014-03-12 四川长虹电器股份有限公司 Esd保护电路
CN103633087B (zh) * 2013-12-19 2016-08-17 电子科技大学 一种具有esd保护功能的强抗闩锁可控ligbt器件
US9231403B2 (en) * 2014-03-24 2016-01-05 Texas Instruments Incorporated ESD protection circuit with plural avalanche diodes
DE102016001689A1 (de) * 2015-08-07 2017-02-09 DEHN + SÖHNE GmbH + Co. KG. Schaltungsanordnung zum Schutz einer aus einem Versorgungsnetz zu betreibenden Einheit gegen Überspannungen
JP6643268B2 (ja) * 2017-03-24 2020-02-12 株式会社東芝 半導体装置
WO2018237199A1 (en) 2017-06-22 2018-12-27 Renesas Electronics America Inc. SOLID TOP TERMINAL FOR DISCRETE FEED DEVICES
CN207490785U (zh) * 2017-06-29 2018-06-12 电力集成公司 开关式功率转换器及对其输入电流进行整形的电路
CN109103240B (zh) * 2018-08-21 2021-08-20 电子科技大学 一种低导通功耗绝缘体上硅横向绝缘栅双极型晶体管
CN109888006B (zh) * 2019-03-12 2021-08-20 电子科技大学 一种低功耗绝缘体上硅横向绝缘栅双极型晶体管
CN114747109B (zh) * 2019-12-06 2024-04-12 华为技术有限公司 一种esd保护电路
TWI804736B (zh) * 2020-03-25 2023-06-11 立錡科技股份有限公司 具有橫向絕緣閘極雙極性電晶體之功率元件及其製造方法
CN114664921B (zh) * 2022-03-21 2023-05-05 电子科技大学 一种具备抗esd功能的igbt及其制造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2289371B (en) * 1994-05-05 1997-11-19 Fuji Electric Co Ltd A semiconductor device and control method
JP2003163271A (ja) * 2001-11-28 2003-06-06 Matsushita Electric Ind Co Ltd 半導体保護装置
DE602005016156D1 (de) * 2005-01-07 2009-10-01 Ami Semiconductor Belgium Bvba Hybride ESD-Klemme
JP4857353B2 (ja) 2009-03-02 2012-01-18 株式会社日立製作所 半導体装置、およびそれを用いたプラズマディスプレイ駆動用半導体装置
JP5396124B2 (ja) * 2009-03-30 2014-01-22 新日本無線株式会社 半導体静電保護装置
JP2010278188A (ja) 2009-05-28 2010-12-09 Renesas Electronics Corp 半導体集積回路装置
US8896064B2 (en) * 2010-10-18 2014-11-25 Taiwan Semiconductor Manufacturing Company, Ltd. Electrostatic discharge protection circuit

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