JP2012236744A - Method for producing oxide superconductor film having alleviated internal stress - Google Patents

Abstract

PROBLEM TO BE SOLVED: To form a film of a superconductive material on a sapphire substrate having a film thickness of ≥300 nm by suppressing generation of a microcrack, and to provide a method for producing the same.SOLUTION: In this method for producing an oxide superconductive material, a superconductive thin film material which is epitaxially grown on a substrate is produced through: a step (1) of applying an organic compound solution of a metal whose oxide forms a superconductive material onto a substrate so as to be dried; a laser irradiation step (2) of photolyzing an organic component in the organic compound of the metal by an excimer laser which is ultraviolet light; a temporary calcining step (3) of thermally decomposing the organic component in the organic compound of the metal; and a glost firing step (4) of performing conversion into a superconductive material. In the method, before performing the glost firing step, laser irradiation is performed only to a predetermined spot to intermingle an a-axially grown precursor spot with a c-axially grown precursor spot in the superconductive material, and then the glost firing step is performed, and thus only the predetermined spot is c-axially grown, to thereby alleviate internal stress of the superconductive material.

Description

  The present invention relates to a method of manufacturing a superconducting material used in the fields of power transportation, power equipment, and information equipment, and more specifically, a superconducting material film (current limiting device, microwave filter, tape material, wire rod) with a reduced internal stress coated with the superconducting material. ).

Conventionally, for substrates on which rare earth oxide superconducting materials are deposited, aluminum oxide (Al ₂ O ₃ ), yttria stabilized zirconia ((Zr, Y) O ₂ , YSZ), magnesium oxide (MgO), lanthanum aluminate (LaAlO ₃ ), strontium titanate (SrTiO ₃ ), neodymium gallate (NdGaO ₃ ) or yttrium aluminate (YALO ₃ ) is selected as a candidate. Among these, an aluminum oxide (sapphire) substrate is said to be suitable for microwave devices because of its mechanical strength and dielectric constant and because it is inexpensive.
Here, the flow of actual film formation will be described using a rare earth oxide superconducting material as a representative YBCO. This material grows in the a-axis and c-axis directions as crystal growth, but in order to exhibit a high critical current necessary for a device, the entire material needs to be a c-axis oriented crystal grown epitaxially on the substrate.

However, when an attempt is made to epitaxially deposit YBCO on an inexpensive sapphire substrate, tensile strain occurs in YBCO and microcracks occur due to the difference in thermal expansion between the sapphire substrate and YBCO. The minimum film thickness at which this crack occurs is called the critical film thickness. In the case of a sapphire substrate, the critical film thickness is about 250 to 280 nm. Here, it is considered that the superconducting material for microwave devices should have a film thickness of 500 nm or more, which is twice the penetration depth of the magnetic field of superconductors. Does not meet the required film thickness. For this reason, MgO substrates that can be made thicker than 500 nm are used for microwave devices, and sapphire substrates that are inexpensive but unsuitable for thickening have not been used for microwave devices.

Therefore, development for the purpose of forming a film of 300 nm or more on a sapphire substrate is underway, and patents have been filed. For example, the one shown in Patent Document 1 uses a sapphire off-cut substrate. 1-2 show the method proposed by Patent Document 1, and the sapphire substrate is not the R plane used for normal film formation, but is cut off slightly from the R plane. What is called a substrate is used. On this surface, an intermediate layer CeO ₂ is formed so that the superconducting material and the sapphire substrate do not react. At this time, lattice distortion occurs due to a lattice constant mismatch between sapphire and CeO ₂ . If this distortion is deposited superconducting material on the CeO ₂ which has occurred, and the superconducting material grown while reflecting the distortion between the sapphire -CeO _2, with a defect occurs within the material, alleviating the baking time of tensile stress That's it.

Also, what is shown in Patent Document 2 is a superconducting material in which YBCO and (Re) BCO in which Y is replaced with other rare earth elements (Re; Dy, Eu, Gd, etc.) are laminated. FIG. 3 shows a schematic diagram thereof. Since the lattice constants of the respective materials are different, lattice distortion occurs at the interface, defects are generated inside the material, and the tensile stress during firing is alleviated.
Although both Patent Documents 1 and 2 use different methods, they are based on the idea of reducing the occurrence of microcracks by relaxing the tensile strain generated inside the superconducting material.

Patent Document 3 proposes a technique in which laser irradiation is combined when forming a superconducting material. The specific steps include (1) a step of applying a metal organic compound solution to the substrate, (2) a step of drying the applied organic compound, (3) a laser irradiation step, and (4) removing organic components. There is already known a method for producing a superconducting material comprising a step (temporary firing step) and (5) a step of crystallizing an inorganic compound (main firing step).

: JP-A-2005-290528 : JP 2008-140789 : JP 2007-70216 A

However, the method of Patent Document 1 has difficulty in reproducibility because it is difficult to cut and polish that are intentionally shifted several times. For this reason, it is difficult to obtain a substrate having a stable quality, and there is a problem that the cost of substrate procurement increases.
In the method of Patent Document 2, since vapor deposition such as vapor deposition and PLD can be performed in order for each layer to be deposited and heat-treated in order, heat treatment suitable for each material can be applied. There is a problem that mass production is difficult due to the necessity of an apparatus. On the other hand, in the solution method, it is possible to make a multilayer film by applying and drying superconducting precursors with different compositions in a form developed from Patent Document 3, but since heat treatment is performed simultaneously, heat treatment corresponding to each composition Thus, epitaxial growth was difficult. In addition, there is a problem that interdiffusion is likely to occur and it is difficult to obtain a desired effect.

When the vapor phase method and the solution method are compared, the vapor phase method that requires a vacuum apparatus has a high production cost and further a batch process. In the solution method, a technique for forming a superconducting material having a thickness of 300 nm or more on a sapphire substrate is required.
The present invention is a method different from the above-mentioned patent document, and has been made in order to solve the thick film formation on the sapphire substrate by the solution method, and has a film thickness of 300 nm or more by suppressing the occurrence of microcracks. The object is to make it possible to form a superconducting material on a sapphire substrate.

In order to achieve the above-described object, the present invention intentionally grows a portion having a different crystal orientation in the material during film formation, thereby reducing the stress generated in the material and suppressing the occurrence of cracks. However, it is possible to deposit a superconducting material of 300 nm or more on a sapphire substrate, which has a large difference in thermal expansion and is not suitable for thickening.
Next, the operation will be described by taking sapphire as the substrate and YBCO as the rare earth oxide superconducting material. When a c-axis alignment film serving as a complete epitaxial film is formed on a sapphire substrate, a crack is generated by a tensile stress generated inside the material. Therefore, before performing the main firing step of crystallizing the superconducting material in advance, a precursor that grows a-axis and a precursor that grows c-axis are mixed in the superconducting material, and then the main firing is performed when the main firing is performed. However, a film in which a-axis crystal grains and c-axis crystal grains are mixed can be formed. By mixing two crystal grains inside the material, lattice distortion occurs and tensile stress is relieved, so even if a superconducting material with a critical film thickness exceeding 300 nm does not generate microcracks, a sapphire substrate As a result, it was found that it was possible to form a film, and the present invention was completed.

That is, the present invention is a step (1) of applying a metal organic compound solution in which an oxide forms a superconducting material on a substrate and drying it, and photodissolving the organic component of the metal organic compound by an excimer laser that is ultraviolet light. Superconducting thin film material epitaxially grown on the substrate through laser irradiation step (2), pre-baking step (3) for thermally decomposing organic components in metal organic compounds, and main firing step (4) for conversion to superconducting material In the manufacturing process, the laser irradiation is performed only on a predetermined portion before performing the main baking step, so that the a-axis grown precursor portion and the c-axis grown precursor portion are mixed in the superconducting material. A method for producing an oxide superconducting material characterized by relieving internal stress of a superconducting material characterized in that a firing step is performed and c-axis growth is performed only at predetermined locations.
In the method for producing an oxide superconducting material of the present invention, it is preferable to use a sapphire single crystal substrate as the substrate.
In the method for manufacturing an oxide superconducting material of the present invention, the shape of the c-axis growth portion (C) is an electronic circuit, and the shape of the a-axis growth portion (A) is the same as the shape of the c-axis growth portion (C). This is a method of manufacturing an oxide superconducting material having an enclosed shape.
Furthermore, the present invention provides a method for producing an oxide superconducting material in which the substrate is a sapphire single crystal substrate, the c-axis grown oxide superconductivity is 300 nm, and the number of cracks per unit area (3 μm × 3 μm) is zero. Is an oxide superconducting film obtained by
Furthermore, in the present invention, the substrate is a sapphire single crystal substrate, the substrate is a sapphire single crystal substrate, the c-axis grown oxide superconductivity is 500 nm, and the number of cracks per unit area (3 μm × 3 μm). It is an oxide superconducting film obtained by the manufacturing method of the oxide superconducting material whose is 0-1.

  As described above, according to the present invention, since the a-axis and the c-axis are intentionally mixed in the film formation of the superconducting material by the solution method, the stress generated in the material can be relaxed thereby, Even when the critical film thickness of the rare earth oxide superconducting material on the sapphire substrate exceeds 300 nm, the film thickness can be increased without generation of microcracks.

Schematic diagram of the substrate in the thickening technique shown in Patent Document 1. Schematic diagram of the substrate in the thickening technique shown in Patent Document 1. Schematic diagram of the substrate in the technique of thickening shown in Patent Document 2 Final form of microwave filter Comparison of YBCO surface electron micrographs when laser is irradiated and partially irradiated (Example 1) Electron micrograph of YBCO 300nm surface on sapphire substrate (Example 2) Electron micrograph of YBCO 500nm surface on sapphire substrate (Example 3)

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
Here, as means for mixing the c-axis and the a-axis in the material, a laser irradiation and a pattern forming method using a mask can be considered. Further, a commercially available laser drawing may be used instead of the mask, and a method of depressing a laser without a mask only in an area to be irradiated may be used. Device Patent Document 3 proposes a method in which laser irradiation is combined when forming a superconducting material. The specific steps include (1) a step of applying a metal organic compound solution to the substrate, (2) a step of drying the applied organic compound, (3) a laser irradiation step, and (4) removing organic components. There is known a method for producing a superconducting material comprising a step (temporary firing step) and (5) a step of crystallizing an inorganic compound (main firing step).
When the superconducting material obtained by this manufacturing method was investigated and researched, it was found that, in the places not subjected to the laser irradiation, only the portions irradiated with the laser exhibited high superconducting characteristics when fired under the same firing conditions. It was also found that the firing conditions at this time greatly shortened the heat treatment time compared to the conventional firing conditions in which laser irradiation was not performed.

The reason why this difference appears is that by irradiating the material with laser at the precursor stage, it is presumed that molecular bonds inside the material are broken by the photochemical reaction of the laser, resulting in a very fine precursor. Since the heat treatment is started from a state where the decomposition has progressed to some extent, the heat treatment time can be shorter than the conventional heat treatment time. Further, since a finer precursor that decomposes only by heat is generated, it has been found that compositional deviation and segregation hardly occur during crystallization, and that epitaxial growth, that is, c-axis orientation is likely to occur.
Utilizing this phenomenon, the a-axis and c-axis are mixed in the superconducting material. First, a thin superconducting thin film of about 100 nm is formed on a sapphire substrate. At this time, for example, assuming a microwave device as an end use, the portion to be a resonance circuit may be the thin superconducting wire shown in FIG. 4, and therefore laser irradiation is performed so that only this portion exhibits high superconducting characteristics. Do. As a result, precursors having different structures in the irradiated portion and the non-irradiated portion are generated. If the film is to be thickened, it will be applied several more times on top of this, but if the entire film is crystallized in the final firing step, crystals that reflect the precursors will be reflected in the irradiated and non-irradiated areas. It turns out that growth occurs.

Specifically, c-axis growth showing a high critical current occurs in the irradiated portion, and a-axis growth does not show a high critical current in the non-irradiated portion. By mixing these in the substrate surface, it is possible to relieve the tensile stress generated during the heat treatment that causes microcracks.
This is an example in which the effects shown in FIGS. 1, 2, and 3 in the prior art can be realized by the solution method and by another method relatively easily.
The substrate used in the present invention is a single substrate selected from lanthanum aluminate (LaAlO ₃ ), strontium titanate (SrTiO ₃ ), neodymium gallate (NdGaO ₃ ), or yttrium aluminate (YAlO ₃ ), which are well-known substrates. Crystal substrate, aluminum oxide (Al ₂ O ₃ ), yttria stabilized zirconia ((Zr, Y) O ₂ , YSZ), magnesium oxide (MgO), lanthanum aluminate (LaAlO ₃ ), strontium titanate (SrTiO ₃ ), Any substrate in which a cerium oxide (CeO ₂ ) intermediate layer is formed on a single crystal substrate selected from neodymium gallate (NdGaO ₃ ) or yttrium aluminate (YAlO ₃ ) may be used. A single crystal substrate is particularly preferably used. When the present invention is applied, as shown in FIG. 4, an electronic circuit such as a resonance circuit using a superconducting thin film with very few cracks can be formed on an inexpensive sapphire substrate.
Specific examples of the present invention will be described below in more detail, but the present invention is not limited to these examples.

(Manufacturing example of oxide superconducting film when the substrate is a single crystal substrate of sapphire, the c-axis grown oxide superconductivity is 500 nm, and when partly irradiated and whole surface irradiated)
(Liquid for raw material)
Dissolve acetylacetonate of Y, Ba, Cu in molar ratio 1: 2: 3 in a mixture of pyridine and propionic acid, remove most of the solvent at about 80 ° C using a vacuum evaporator, and then redissolve in methanol. The solution used was used.
(substrate)
A sapphire R-plane single crystal substrate 25 mm × 25 mm × 0.5 mm was used.
(Coating drying)
The raw material solution was spin-coated on a single crystal substrate of sapphire at 4000 rpm for 10 seconds and dried at 130 ° C. in a thermostatic bath.
(Laser irradiation)
Decide where to grow the c-axis (about 10 circles with a radius of 1mm on a 25mm x 25mm substrate), cover the other parts with a mask, and irradiate KrF excimer laser only at that point.
A KrF excimer laser was irradiated in the vertical direction at room temperature. The irradiation conditions were as follows.
125kPa in air at room temperature
Fluence: 20 mJ / cm ²
Frequency: 100Hz
Overlap rate: 99%
Number of pulses: 30000
(Temporary firing)
Next, the laser-irradiated sample was inserted into a muffle furnace previously maintained at 500 ° C., and taken out while maintaining this temperature for 30 minutes.

The above coating and drying to calcination were repeated a predetermined number of times to increase the film thickness.

(Main firing)
Next, the main firing was performed in a quartz tube furnace under the following conditions. First, in a mixed gas flow of argon and oxygen with the oxygen partial pressure adjusted to 100 ppm, the temperature was increased to 770 ° C at a temperature increase rate of about 16 ° C per minute, maintained at this temperature for 45 minutes, and the gas was switched to pure oxygen. Hold for 30 minutes, then cool slowly.
(Inspection of oxide superconducting film)
FIG. 5 shows an electron micrograph of the surface of the laser irradiated portion of a circular YBCO film having a film thickness of 500 nm and a radius of 1 mm formed after the main baking. When 30 arbitrary unit areas (3 μm × 3 μm) were inspected over the entire surface, the number of cracks was 0.6 on average. An electron micrograph of the surface is shown in FIG.
(Comparative example)
The procedure was carried out in the same manner as in Example 1 except that the location for c-axis growth was determined as a whole (the entire surface of the 25 mm × 25 mm substrate), and then that location was irradiated with a KrF excimer laser.
FIG. 5 shows an electron micrograph of the surface of a 500 nm thick YBCO film formed after the main baking. When 30 arbitrary unit areas (3 μm × 3 μm) were inspected over the entire surface, the number of cracks was 4.5 on average. An electron micrograph of the surface is shown in FIG.
Enclose the crack in practice. Compared to Example 1, there was a tendency for cracks to increase significantly.

(Manufacturing example of oxide superconducting film in which the substrate is a single crystal substrate of sapphire, the c-axis grown oxide superconductivity is 300 nm, and the number of cracks per unit area (3 μm × 3 μm) is 0)
(Liquid for raw material)
Dissolve acetylacetonate of Y, Ba, Cu in molar ratio 1: 2: 3 in a mixture of pyridine and propionic acid, remove most of the solvent at about 80 ° C using a vacuum evaporator, and then redissolve in methanol. The solution used was used.
(substrate)
A sapphire R-plane single crystal substrate 25 mm × 25 mm × 0.5 mm was used.
(Coating drying)
The raw material solution was spin-coated on the substrate KC1 at 4000 rpm for 10 seconds, and dried at 130 ° C. in a thermostatic bath.
(Laser irradiation)
After determining the location (about 10 circles with a radius of 1mm on a 25mm x 25mm substrate) that should be grown on the c-axis, cover the other parts with a mask and irradiate only that location with the KrF excimer laser.
A KrF excimer laser was irradiated in the vertical direction at room temperature. The irradiation conditions were as follows.
125kPa in air at room temperature
Fluence: 20 mJ / cm ²
Frequency: 100Hz
Overlap rate: 99%
Number of pulses: 30000
(Temporary firing)
Next, the laser-irradiated sample was inserted into a muffle furnace previously maintained at 500 ° C., and taken out while maintaining this temperature for 30 minutes.

The above coating and drying to calcination were repeated a predetermined number of times to increase the film thickness.


(Main firing)
Next, the main firing was performed in a quartz tube furnace under the following conditions. First, in a mixed gas flow of argon and oxygen with the oxygen partial pressure adjusted to 100 ppm, the temperature was increased to 770 ° C at a temperature increase rate of about 16 ° C per minute, maintained at this temperature for 45 minutes, and the gas was switched to pure oxygen. Hold for 30 minutes, then cool slowly.
(Inspection of oxide superconducting film)
When a circular YBCO film with a film thickness of about 300 nm and a radius of 1 mm was formed after the main firing, 30 arbitrary unit areas (3 μm × 3 μm) were inspected over the entire surface of the laser irradiation part.
All had 0 cracks. An electron micrograph of the surface is shown in FIG.
(Inspection of laser non-irradiated part)
An electron micrograph of the surface of the laser non-irradiated part is shown in FIG.

(Manufacturing example of oxide superconducting film in which the substrate is a single crystal substrate of sapphire, c-axis grown oxide superconductivity is 500 nm, and the number of cracks is 0 to 1 per unit area (3 μm × 3 μm))
(Liquid for raw material)
Dissolve acetylacetonate of Y, Ba, Cu in molar ratio 1: 2: 3 in a mixture of pyridine and propionic acid, remove most of the solvent at about 80 ° C using a vacuum evaporator, and then redissolve in methanol. The solution used was used.
(substrate)
A sapphire R-plane single crystal substrate 25 mm × 25 mm × 0.5 mm was used.
(Coating drying)
The raw material solution was spin-coated on a sapphire R-plane single crystal substrate at 4000 rpm for 10 seconds and dried at 130 ° C. in a thermostatic bath.
(Laser irradiation)
After determining the location (about 10 circles with a radius of 1mm on a 25mm x 25mm substrate) to be c-axis grown, store that portion in the storage device of a commercially available laser lithography system, and only that location is the KrF excimer Irradiate laser.
A KrF excimer laser was irradiated in the vertical direction at room temperature. The irradiation conditions were as follows.
125kPa in air at room temperature
Fluence: 20 mJ / cm ²
Frequency: 100Hz
Overlap rate: 99%
Number of pulses: 30000
(Temporary firing)
Next, the laser-irradiated sample was inserted into a muffle furnace previously maintained at 500 ° C., and taken out while maintaining this temperature for 30 minutes.

The above coating and drying to calcination were repeated a predetermined number of times to increase the film thickness.
(Main firing)
Next, the main firing was performed in a quartz tube furnace under the following conditions. First, in a mixed gas flow of argon and oxygen with the oxygen partial pressure adjusted to 100 ppm, the temperature was increased to 770 ° C at a temperature increase rate of about 16 ° C per minute, maintained at this temperature for 45 minutes, and the gas was switched to pure oxygen. Hold for 30 minutes, then cool slowly.
(Inspection of oxide superconducting film)
When a circular YBCO film with a film thickness of 500 nm and a radius of 1 mm formed after the main firing was inspected over 30 units of arbitrary unit areas (3 μm × 3 μm),
The number of cracks was 0.6 on average. An electron micrograph of the surface is shown in FIG.
(Inspection of laser non-irradiated part)
An electron micrograph of the surface of the laser non-irradiated part is shown in FIG.

According to the manufacturing method of the present invention, since a superconducting circuit having good performance can be formed on an inexpensive sapphire substrate, an inexpensive superconducting circuit element can be produced. It is.

DESCRIPTION OF SYMBOLS 1 Resonant circuit 2 Substrate 3 Laser 4 c-axis growth part 5 a-axis growth part

Claims (5)

  A process of applying a metal organic compound solution in which an oxide forms a superconducting material on a substrate and drying (1), a laser irradiation process of photodegrading the organic component of a metal organic compound with an excimer laser that is ultraviolet light (2) In manufacturing a superconducting thin film material epitaxially grown on a substrate through a preliminary firing step (3) for thermally decomposing an organic component in a metal organic compound and a main firing step (4) for converting into a superconducting substance, By performing laser irradiation only on a predetermined location before performing the firing step, the main conductive step is performed after mixing the precursor location for a-axis growth and the precursor location for c-axis growth in the superconducting material. A method for producing an oxide superconducting material, wherein internal stress of the superconducting material is relaxed by c-axis growth only at the point. 2. The method for producing an oxide superconducting material according to claim 1, wherein the substrate is a sapphire single crystal substrate. The oxide superconducting material according to claim 2, wherein the shape of the c-axis growth portion (C) is an electronic circuit, and the shape of the a-axis growth portion (A) is a shape surrounding the shape of the c-axis growth portion (C). Manufacturing method. 4. The oxide superconductor according to claim 2, wherein the substrate is a single crystal substrate of sapphire, the c-axis grown oxide superconductor is 300 nm, and the number of cracks per unit area (3 μm × 3 μm) is zero. An oxide superconducting film obtained by a material manufacturing method. 4. The oxidation according to claim 2, wherein the substrate is a single crystal substrate of sapphire, c-axis grown oxide superconductivity is 500 nm, and the number of cracks per unit area (3 μm × 3 μm) is 0 to 1. An oxide superconducting film obtained by a method for manufacturing a superconducting material.

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