JP5721144B2 - Superconducting multilayer structure thin film - Google Patents
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
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- Containers, Films, And Cooling For Superconductive Devices (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Laminated Bodies (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Description
この発明は、超電導薄膜の構造に関するものである。 The present invention relates to the structure of a superconducting thin film.
従来、フィルタ用途の超電導多層膜としては、特許文献1及び特許文献2により提案されているものがあった。
第1図に示すものは、特許文献1により提案されているものであり、図において(1)はサファイアR面の基板、(2a)はサファイアR面の基板(1)の上に設けられた第1層のYSZバッファー層、(3a)は第1層のYSZバッファー層(2a)上に成膜された超電導層。(2b)は前述の超電導層(3a)の上に成膜された第2層のYSZバッファー層、(3b)は第2層のYSZバッファー層(2b)上に成膜された超電導層である。
Conventionally, as superconducting multilayer films for filters, there have been those proposed in
The one shown in FIG. 1 is proposed by
第2図に示すものは、特許文献2により提案されているものであり、図において、11は誘電体基板10の裏面に形成された接地導体(11)である。超電導薄膜1,2,3,4,5と誘電体薄膜30−1,30−2,30−3,30−4とを所定の膜厚配列の下に交互に積層して、超電導多層電極や超電導多層線路を構成した超電導多層電極である。従来のフィルタ用多層薄膜は以上のように構成されているので、誘電体基板上のバッファー層に形成されたエピタキシャル成長した超電導薄膜の上にバッファー層としてエピタキシャル成長させた誘電体を形成させなければならず、高度な成膜装置や技術が必要で、また、膜厚を稼ぐために複数回の繰り返し成膜してきたため再現性の面で課題を有していた。特許文献3には、金属含有化合物を含む溶液を誘電体基板に塗布し、焼成してc軸配向のYB2Cu3O7-X高温超電導薄膜を形成した後、所定のパターニングを施して高周波フィルタを製造する方法が記載されている。この方法で成膜した超電導薄膜を共振周波数約10GHzで表面抵抗を測定しており、その値は30Kにおいて0.4から1mΩが得られたとしている。
The one shown in FIG. 2 is proposed by
一般的に薄膜が形成される基板と薄膜材料は物質が異なるため、格子ミスフィットや熱膨張係数の差を原因とした応力が発生する。単結晶基板上に単結晶材料と異なる材料である酸化物系超電導材料をc軸エピタキシャル成長させていくとある膜厚で薄膜に割れが発生することが知られている。この時の膜厚は臨界膜厚と呼ばれている。 臨界膜厚以上の膜厚を成膜することで超電導薄膜に割れ(亀裂)が発生してしまうため、フィルタ用途に適した誘電体基板であるにもかかわらず、フィルタに適した膜厚の超電導薄膜を誘電体基板上に成膜することができなかった。通常の銅箔のマイクロストリップ構造のフィルタのQ値は高々300〜1000程度である。一方、超電導薄膜を用いた同構造のフィルタのQ値は10万を越す事が可能であり、前述の超電導薄膜の膜厚増加に伴う薄膜の割れ(亀裂)を抑制できれば、極めて性能の高いフィルタ用超電導薄膜基板とする事ができる。
この発明は上記の課題を解決するためになされたもので、基板上に設けたc軸エピタキシャル成長超電導薄膜上に更にバッファー層を設けることなく、c軸成長とa軸成長が混在した超電導薄膜を成膜することにより、高度な成膜装置や技術が必要とならないフィルタ用途に適した超電導薄膜構造を提供することを目的としている。
In general, since a substrate and a thin film material on which a thin film is formed are different from each other, stress is generated due to a lattice misfit or a difference in thermal expansion coefficient. It is known that when an oxide superconducting material, which is a material different from a single crystal material, is grown on a single crystal substrate by c-axis epitaxial growth, the thin film is cracked at a certain film thickness. The film thickness at this time is called a critical film thickness. The superconducting thin film cracks due to the film thickness exceeding the critical film thickness. Therefore, the superconducting film is suitable for the filter even though it is a dielectric substrate suitable for the filter application. A thin film could not be formed on the dielectric substrate. The Q value of a filter having a normal copper foil microstrip structure is about 300 to 1000 at most. On the other hand, the Q value of a filter with the same structure using a superconducting thin film can exceed 100,000, and if the cracking of the thin film accompanying the increase in the film thickness of the superconducting thin film described above can be suppressed, a very high performance filter It can be used as a superconducting thin film substrate.
The present invention has been made to solve the above-described problems.A superconducting thin film in which c-axis growth and a-axis growth are mixed is formed without providing a buffer layer on the c-axis epitaxial growth superconducting thin film provided on the substrate. An object of the present invention is to provide a superconducting thin film structure suitable for a filter application that does not require an advanced film forming apparatus or technology.
この発明は、上記目的を達成するために、高密度で電流を流す臨界膜厚以下のc軸エピタキシャル成長した超電導薄膜と電流は流し難いものの77Kにおいて表面抵抗値が0.6mΩ以下(10GHz)のc軸成長とa軸成長が混在した超電導薄膜を基板上に設けたものである。
臨界膜厚以下のc軸エピタキシャル成長超電導薄膜は高い電流密度で電流を流すように作用して、その上に形成したc軸成長とa軸成長が混在した超電導薄膜はフィルタとして必要とされる表面抵抗を確保すると共に、超電導薄膜内に侵入する磁場を防止するための超電導障壁のように動作する。それによって、二層超電導薄膜は、機能を分担した一体の超電導薄膜のようになるので、高周波フィルタ用の超電導薄膜とすることができる。
In order to achieve the above object, the present invention achieves the above-described c-axis epitaxially grown superconducting thin film of a critical thickness or less that allows current to flow at a high density and a c resistance having a surface resistance of 0.6 mΩ or less (10 GHz) at 77 K, although current is difficult to flow. A superconducting thin film in which axial growth and a-axis growth are mixed is provided on a substrate.
The c-axis epitaxially grown superconducting thin film below the critical film thickness acts as a current at a high current density, and the superconducting thin film formed by mixing c-axis and a-axis grown on it has the required surface resistance as a filter. And operates like a superconducting barrier for preventing a magnetic field penetrating into the superconducting thin film. As a result, the two-layer superconducting thin film looks like an integral superconducting thin film with shared functions, and thus can be a superconducting thin film for a high frequency filter.
すなわち、本発明は、基板上に形成されたc軸エピタキシャル成長超電導薄膜上に、バッファー層を介することなく、当該c軸エピタキシャル成長超電導物質と同じ化学素材のc軸成長とa軸成長が混在した超電導薄膜を積層した超電導多層膜である。
また、本発明の超電導多層膜は、基板上に形成されたc軸エピタキシャル成長超電導薄膜が臨界膜厚以下であり、c軸エピタキシャル成長超電導薄膜とc軸成長とa軸成長が混在した超電導薄膜を加えた厚さが300nm以上であり、場合により、800nm以上とすることができ、さらに場合により、1000〜3000nmとすることができる。
さらに、本発明の超電導多層膜は、基板がサファイアの単結晶基板であり、c軸エピタキシャル成長超電導薄膜がYBCOであり、またc軸成長とa軸成長が混在した超電導薄膜がYBCOとすることができる。
That is, the present invention provides a superconducting thin film in which c-axis growth and a-axis growth of the same chemical material as the c-axis epitaxial growth superconducting material are mixed on the c-axis epitaxial growth superconducting thin film formed on the substrate without using a buffer layer. Is a superconducting multilayer film.
In addition, the superconducting multilayer film of the present invention is such that the c-axis epitaxially grown superconducting thin film formed on the substrate has a critical thickness or less, and a c-axis epitaxially grown superconducting thin film and a superconducting thin film in which c-axis grown and a-axis grown are mixed are added. The thickness is 300 nm or more, and in some cases, it can be 800 nm or more, and in some cases, it can be 1000 to 3000 nm.
Furthermore, the superconducting multilayer film of the present invention can be a single crystal substrate of sapphire, the c-axis epitaxially grown superconducting thin film is YBCO, and the superconducting thin film in which c-axis growth and a-axis growth are mixed can be YBCO. .
また、本発明の超電導多層膜は、誘電体基板が、セリアバッファー層を成膜したサファイアの単結晶基板であり、セリアバッファー層上に、c軸エピタキシャル成長超電導薄膜を形成することができる。
さらに、本発明は、これらの超電導多層膜のいずれか一つを用いた高周波フィルタに適合する薄膜である。
In the superconducting multilayer film of the present invention, the dielectric substrate is a sapphire single crystal substrate having a ceria buffer layer formed thereon, and a c-axis epitaxially grown superconducting thin film can be formed on the ceria buffer layer.
Furthermore, the present invention is a thin film suitable for a high-frequency filter using any one of these superconducting multilayer films.
さらに本発明は、酸化物が超電導物質を形成する金属の有機化合物溶液を基板上に塗布し、乾燥させる工程(イ)、金属の有機化合物中の有機成分を、レーザ光を照射した後、熱分解させることによりc軸エピタキシャル成長超電導薄膜を得るための仮焼成工程(ロ)、所望の厚さが得られるまで工程(イ)及び工程(ロ)を繰り返す工程(ハ)、さらに、上記工程(イ)で用いた酸化物が超電導物質を形成する金属の有機化合物溶液と同じ酸化物が超電導物質を形成する金属の有機化合物溶液を基板上に塗布し、乾燥させる工程(ニ)、所望の厚さが得られるまで工程(ニ)を繰り返すか、又は、酸化物が超電導物質を形成する金属の有機化合物溶液の濃度を高めて塗布する工程(ヘ)、次いで、金属の有機化合物中の有機成分を、レーザ光を照射せずに、徐々に昇温し、熱分解させることによりc軸成長とa軸成長が混在した超電導薄膜を得るための、本焼成(ト)を行うことを特徴とする超電導多層膜の製造方法である。 Further, the present invention provides a step (a) in which a metal organic compound solution in which an oxide forms a superconducting material is applied on a substrate and dried, and an organic component in the metal organic compound is irradiated with laser light, and then heated. A preliminary firing step (b) for obtaining a c-axis epitaxially grown superconducting thin film by decomposition, a step (b) repeating the step (b) and the step (b) until a desired thickness is obtained, and the above step (b) Step 2) Applying and drying a metal organic compound solution in which the oxide used in step 2) forms the superconducting material on the substrate, and drying the metal (the desired thickness). Step (d) is repeated until an oxide is obtained, or the step of applying a metal organic compound solution in which the oxide forms a superconducting substance is increased (f), and then the organic component in the metal organic compound is added. Irradiate the laser beam The method of manufacturing a superconducting multilayer film characterized by performing main firing (g) to obtain a superconducting thin film in which c-axis growth and a-axis growth are mixed by gradually heating and thermally decomposing is there.
この発明の超電導多層膜は、厚さが1000nm以上になっても、割れ(亀裂)が発生しない。また、この発明の超電導多層膜は、高周波フィルタ用の基板の単結晶上に、臨界膜厚以下のc軸エピタキシャル成長超電導薄膜を設け、更にc軸成長とa軸成長が混在した超電導薄膜を設けた二層薄膜としたので、高い電流、低い表面抵抗、臨界膜厚以上の膜厚かつ磁場侵入長以上の膜厚が得られる効果がある。 The superconducting multilayer film of the present invention does not crack (crack) even when the thickness is 1000 nm or more. The superconducting multilayer film of the present invention is provided with a c-axis epitaxially grown superconducting thin film having a critical thickness or less on a single crystal of a substrate for a high-frequency filter, and further provided with a superconducting thin film in which c-axis growth and a-axis growth are mixed. Since it is a two-layer thin film, there is an effect that a high current, a low surface resistance, a film thickness exceeding the critical film thickness and a film thickness exceeding the magnetic field penetration length can be obtained.
本発明の実施例で使用できる誘電体基板は、市販のランタンアルミネート(LaAlO3)(100)基板、市販のチタン酸ストロンチウム(SrTiO3)(100)基板、市販の酸化ランタンストロンチウムタンタルアルミニウム(LaxSr1-x)(AlyTa1-y)O3)(100)基板、市販のネオジムガレート(NdGaO3)(110) 基板、市販のイットリウムアルミネート(YAlO3)(110) 基板、市販の酸化アルミニウム(Al2O3)単結晶(サファイア)R面基板に酸化セリウム(CeO2) バッファーを形成した基板、市販のイットリア安定化ジルコニア((Zr,Y)O2, YSZ)(100)にCeO2バッファーを形成した基板、市販の酸化マグネシウム(MgO)(100) 基板にCeO2バッファー層を形成した基板、市販のLaAlO3(100)基板にCeO2バッファー層を形成した基板、市販のSrTiO3(100)基板にCeO2バッファー層を形成した基板、市販の((LaxSr1-x)(AlyTa1-y)O3(100)基板にCeO2バッファーを形成した基板、市販のNdGaO3(110) 基板にCeO2中間層を形成した基板、市販のYAlO3(110) 基板にCeO2バッファー層を形成した基板等を挙げることができる。なお、バッファー層は、周知の層形成手段例えば蒸着、スパッタ、パルスレーザ蒸着、塗布熱分解法、塗布光分解法、ゾルゲル法等を利用して形成させることができる。
また、本発明の超電導多層膜は、基板上に形成されたc軸エピタキシャル成長超電導薄膜が臨界膜厚以下であればよく、c軸エピタキシャル成長超電導薄膜とc軸成長とa軸成長が混在した超電導薄膜を加えた厚さが300nm以上あれば、いちおう目的は達成できるが、好ましくは、c軸エピタキシャル成長超電導薄膜とc軸成長とa軸成長が混在した超電導薄膜を加えた厚さが800nm以上とすることができ、同じ基板であっても、基板の種類を変えることによっても、1000〜3000nmとすることができる。
なお、c軸成長とa軸成長が混在した超電導薄膜の厚さは、酸化物が超電導物質を形成する金属の有機化合物溶液に含まれる金属成分の濃度を高くすることで、塗布、乾燥の繰り返し工程を少なくすることもできる。
Dielectric substrates that can be used in embodiments of the present invention include commercially available lanthanum aluminate (LaAlO 3 ) (100) substrates, commercially available strontium titanate (SrTiO 3 ) (100) substrates, and commercially available lanthanum strontium tantalum aluminum oxide (La x Sr 1-x) (Al y Ta 1-y) O 3) (100) substrate, a commercially available neodymium gallate (NdGaO 3) (110) substrate, a commercially available yttrium aluminate (YAlO 3) (110) substrate, a commercially available Aluminum oxide (Al 2 O 3 ) single crystal (sapphire) R-plane substrate with cerium oxide (CeO 2 ) buffer, commercially available yttria stabilized zirconia ((Zr, Y) O 2 , YSZ) (100) Substrate formed with CeO 2 buffer, commercially available magnesium oxide (MgO) (100) substrate with CeO 2 buffer layer formed on substrate, commercially available LaAlO 3 (100) substrate with CeO 2 buffer layer formed on substrate, commercially available SrTiO 3 (100) substrate with the CeO 2 buffer layer on the substrate, the city Of ((La x Sr 1-x ) (Al y Ta 1-y) O 3 (100) substrate with the CeO 2 buffer substrate, a substrate obtained by forming a CeO 2 intermediate layer in commercial NdGaO 3 (110) substrate And a commercially available YAlO 3 (110) substrate with a CeO 2 buffer layer formed thereon, etc. The buffer layer may be a well-known layer forming means such as vapor deposition, sputtering, pulse laser vapor deposition, coating pyrolysis, It can be formed using a coating photolysis method, a sol-gel method, or the like.
In addition, the superconducting multilayer film of the present invention is not limited as long as the c-axis epitaxially grown superconducting thin film formed on the substrate has a critical thickness or less, and a c-axis epitaxially grown superconducting thin film and a superconducting thin film in which c-axis grown and a-axis grown are mixed. If the added thickness is 300 nm or more, the purpose can be achieved, but preferably the thickness including the c-axis epitaxially grown superconducting thin film and the superconducting thin film in which c-axis growth and a-axis growth are mixed is 800 nm or more. Even if it is the same board | substrate, it can be set to 1000-3000 nm also by changing the kind of board | substrate.
Note that the thickness of the superconducting thin film in which c-axis growth and a-axis growth coexist is repeated by repeating the coating and drying by increasing the concentration of the metal component in the metal organic compound solution in which the oxide forms the superconducting material. The number of steps can be reduced.
本発明において、酸化物が超電導物質を形成する金属の有機化合物溶液は、種々知られており、本発明において代表的に用いられる酸化物が超電導物質を形成する金属の有機化合物溶液としては、(Y1)モル比1:2:3のY,Ba,Cuのアセチルアセトナトをピリジンとプロピオン酸の混合液に溶解し、真空エバポレータを用いて約80℃で溶媒の大部分を除去した後メタノールに再溶解した溶液(YC1)Y1でモル比1:2:3のY,Ba,Cuのアセチルアセトナトの代わりにモル比0.95:0.05:2:3のY,Ca,Ba,Cuのアセチルアセトナトとして調製した溶液(Y2)Y,Ba,Cuのナフテン酸塩のトルエン溶液をモル比1:2:3で混合した溶液(Y3)Y,Ba,Cuの2−エチルヘキサン酸塩のトルエン溶液をモル比1:2:3で混合した溶液(Y4)Y1でプロピオン酸の代わりにトリフルオロ酢酸として調製した溶液(Y5)Y,Ba,Cuのトリフルオロ酢酸塩のメタノール溶液をモル比1:2:3で混合した溶液(D1)Y1でY−アセチルアセトナトの代わりにDy−アセチルアセトナトとして調製した溶液(E1)Y1でY−アセチルアセトナトの代わりにEr−アセチルアセトナトとして調製した溶液等を挙げることができる。さらに、本発明で用いることができるレーザ光としては、(H1)KrFエキシマレーザ(H2)XeClエキシマレーザ(H3)ArFエキシマレーザを挙げることができる。 本発明の具体例を示し、さらに詳しく説明するが、本発明はこれら実施例に限定されるものではない。
In the present invention, various metal organic compound solutions in which an oxide forms a superconducting material are known. Examples of metal organic compound solutions in which an oxide typically used in the present invention forms a superconducting material include ( Y1) Y: Ba, Cu acetylacetonate with a molar ratio of 1: 2: 3 was dissolved in a mixture of pyridine and propionic acid, and most of the solvent was removed at about 80 ° C. using a vacuum evaporator. Instead of acetylacetonate of Y, Ba, Cu in a 1: 2: 3 molar ratio in the redissolved solution (YC1) Y1, Y, Ca, Ba, Cu in a molar ratio of 0.95: 0.05: 2: 3 (Y2) Y, Ba, Cu 2-ethylhexanoate solution prepared by mixing toluene solution of Y, Ba, Cu naphthenate salt in molar ratio 1: 2: 3 A solution (Y4) Y of a toluene solution of 1: 2: 3 mixed in a molar ratio Prepared as trifluoroacetic acid instead of propionic acid in (Y5) solution of Y, Ba, Cu trifluoroacetate in methanol mixed in molar ratio 1: 2: 3 (D1) Y1-acetylacetate in Y1 Solution prepared as Dy-acetylacetonate instead of nato (E1) A solution prepared as Er-acetylacetonate instead of Y-acetylacetonate in Y1 can be mentioned. Further, examples of laser light that can be used in the present invention include (H1) KrF excimer laser (H2) XeCl excimer laser (H3) ArF excimer laser. Although the specific example of this invention is shown and demonstrated in more detail, this invention is not limited to these Examples.
基板がサファイアの単結晶基板であり、c軸エピタキシャル成長した酸化物超電導膜が300nmであり、その上にc軸成長とa軸成長が混在した二層酸化物超電導膜の製造例
(原料用液)
モル比1:2:3のY,Ba,Cuのアセチルアセトナトをピリジンとプロピオン酸の混合液に溶解し、真空エバポレータを用いて約80℃で溶媒の大部分を除去した後メタノールに再溶解した溶液を用いた。
(基板)
セリアバッファー層を成膜したサファイアのR面単結晶基板 25mm×25mm×0.5mmを用いた。
(塗布乾燥)
上記原料溶液をサファイアの単結晶基板に4000rpm、10秒間でスピンコートし、恒温槽中130℃で乾燥させた。
(レーザ照射)
KrFエキシマレーザを基板面に、1平方センチあたり500Jのエネルギーを照射した。
(仮焼成)
次に、このレーザ照射した試料を、あらかじめ500℃に保った電気炉中に挿入し、30分間この温度に保って取り出した。
(塗布乾燥)
電気炉から取り出した基板に焼き付けられたYBCO前駆体上に前記原料溶液に所望の粘性になるようブタノールを加えた溶液を所望の厚さとなるよう塗布し、乾燥させた。
(本焼成)
ついで石英製管状炉中で以下の条件で本焼成を行った。まず、酸素分圧を100ppmに調整したアルゴンと酸素の混合ガス流中で昇温速度毎分約16℃で770℃まで昇温し、770℃で45分間保ち、ガスを純酸素に切り替えてさらに30分間保った後、除冷する。
(酸化物超電導膜の検査)
本焼成後に出来た膜厚500nmYBCO膜、800nmYBCO膜および1200nmYBCO膜について検査を行った結果、臨界電流密度はそれぞれ0.80MA/cm2、0.73MA/cm2、0.61MA/cm2であった。加えて800nmYBCOの表面抵抗は77Kにおいて0.6mΩ(10GHz)であった。なお、30Kにおいては0.25mΩの表面抵抗値であった。
図8は、実施例1で得た膜厚800nm超電導多層膜(YBCO)の臨界電流密度分布を示す。
Example of manufacturing a two-layer oxide superconducting film in which the substrate is a sapphire single crystal substrate, the c-axis epitaxially grown oxide superconducting film is 300 nm, and c-axis growth and a-axis growth are mixed on it (raw material solution)
Dissolve acetylacetonate of Y, Ba, Cu in a molar ratio of 1: 2: 3 in a mixture of pyridine and propionic acid, remove most of the solvent at about 80 ° C. using a vacuum evaporator, and then redissolve in methanol. The solution used was used.
(substrate)
A sapphire R-plane single crystal substrate 25 mm × 25 mm × 0.5 mm on which a ceria buffer layer was formed was used.
(Coating drying)
The raw material solution was spin-coated on a sapphire single crystal substrate at 4000 rpm for 10 seconds, and dried at 130 ° C. in a thermostatic bath.
(Laser irradiation)
The substrate surface was irradiated with energy of 500 J per square centimeter with a KrF excimer laser.
(Temporary firing)
Next, this laser-irradiated sample was inserted into an electric furnace previously maintained at 500 ° C. and taken out while maintaining this temperature for 30 minutes.
(Coating drying)
On the YBCO precursor baked on the substrate taken out from the electric furnace, a solution in which butanol was added to the raw material solution to a desired viscosity was applied to a desired thickness and dried.
(Main firing)
Next, the main firing was performed in a quartz tube furnace under the following conditions. First, in a mixed gas flow of argon and oxygen with the oxygen partial pressure adjusted to 100 ppm, the temperature is increased to about 770 ° C. at a temperature increase rate of about 16 ° C. per minute, maintained at 770 ° C. for 45 minutes, Hold for 30 minutes and then cool.
(Inspection of oxide superconducting film)
Thickness 500nmYBCO film could after the sintering, as a result of inspection for 800nmYBCO film and 1200nmYBCO film, respectively the critical
FIG. 8 shows the critical current density distribution of the 800 nm-thick superconducting multilayer film (YBCO) obtained in Example 1.
本発明の超電導多層膜は、厚く作ることができるうえ、亀裂が発生せず、高い電流、低い表面抵抗、臨界膜厚以上の厚膜かつ磁場侵入長以上の厚膜が得られるので高周波用フィルタとして用いることができ、産業上の利用可能性が高いものである。 The superconducting multilayer film of the present invention can be made thick, and cracks do not occur, and a high current, a low surface resistance, a thick film exceeding the critical film thickness, and a thick film exceeding the magnetic field penetration length can be obtained. It can be used as an industrial applicability.
1b サファイヤーR面の基板
2a 第1層のYSZバッファー層
2b 第2層のYSZバッファー層
3a 第1層のYBCO超電導薄膜
3b 第2層のYBCO超電導薄膜
1 超電導薄膜
2 超電導薄膜
3 超電導薄膜
4 超電導薄膜
5 超電導薄膜
10 誘電体基板
11 接地導体
30−1 薄膜誘電体
30−2 薄膜誘電体
30−3 薄膜誘電体
30−4 薄膜誘電体
DESCRIPTION OF
Claims (5)
A step of applying a metal organic compound solution in which an oxide forms a superconducting material on a substrate and drying (a), and irradiating the organic component in the metal organic compound with laser light and then thermally decomposing c Temporary baking step (b) for obtaining a superconducting thin film with axial epitaxial growth, step (a) and step (b) repeating step (b) until the desired thickness is obtained, and the oxidation used in step (a) above A process in which a metal organic compound solution in which an object forms a superconducting material and the same oxide as a metal organic compound solution in which the superconducting substance is formed is applied on the substrate and dried (d), until a desired thickness is obtained Repeat step (d) or increase the concentration of the metal organic compound solution in which the oxide forms a superconducting material (f), and then irradiate the organic component in the metal organic compound with laser light. Without gradually increasing the temperature Then, a method for producing a superconducting multilayer film, comprising performing main firing (g) for obtaining a superconducting thin film in which c-axis growth and a-axis growth coexist by thermal decomposition.
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