JP2012235111A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2012235111A5 JP2012235111A5 JP2012098808A JP2012098808A JP2012235111A5 JP 2012235111 A5 JP2012235111 A5 JP 2012235111A5 JP 2012098808 A JP2012098808 A JP 2012098808A JP 2012098808 A JP2012098808 A JP 2012098808A JP 2012235111 A5 JP2012235111 A5 JP 2012235111A5
- Authority
- JP
- Japan
- Prior art keywords
- chemical mechanical
- mechanical polishing
- substrate
- polishing composition
- antimony
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 claims 21
- 239000000126 substance Substances 0.000 claims 18
- 239000000758 substrate Substances 0.000 claims 16
- 239000000203 mixture Substances 0.000 claims 13
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims 12
- 238000000034 method Methods 0.000 claims 12
- 229910045601 alloy Inorganic materials 0.000 claims 10
- 239000000956 alloy Substances 0.000 claims 10
- 229910000618 GeSbTe Inorganic materials 0.000 claims 9
- 230000007547 defect Effects 0.000 claims 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 2
- 239000002738 chelating agent Substances 0.000 claims 2
- 239000007800 oxidant agent Substances 0.000 claims 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims 2
- 229920002635 polyurethane Polymers 0.000 claims 2
- 239000004814 polyurethane Substances 0.000 claims 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical group OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims 1
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- CBJZJSBVCUZYMQ-UHFFFAOYSA-N antimony germanium Chemical compound [Ge].[Sb] CBJZJSBVCUZYMQ-UHFFFAOYSA-N 0.000 claims 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 claims 1
- 239000008119 colloidal silica Substances 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- -1 phthalate compound Chemical class 0.000 claims 1
- 150000003021 phthalic acid derivatives Chemical class 0.000 claims 1
- 229920001446 poly(acrylic acid-co-maleic acid) Polymers 0.000 claims 1
- 150000003839 salts Chemical class 0.000 claims 1
- 229910052714 tellurium Inorganic materials 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/096,707 US8790160B2 (en) | 2011-04-28 | 2011-04-28 | Chemical mechanical polishing composition and method for polishing phase change alloys |
| US13/096,707 | 2011-04-28 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012235111A JP2012235111A (ja) | 2012-11-29 |
| JP2012235111A5 true JP2012235111A5 (OSRAM) | 2015-06-18 |
| JP5960489B2 JP5960489B2 (ja) | 2016-08-02 |
Family
ID=47007822
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012098808A Expired - Fee Related JP5960489B2 (ja) | 2011-04-28 | 2012-04-24 | ケミカルメカニカルポリッシング組成物及び相変化合金を研磨する方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8790160B2 (OSRAM) |
| JP (1) | JP5960489B2 (OSRAM) |
| CN (1) | CN102756325B (OSRAM) |
| DE (1) | DE102012007812A1 (OSRAM) |
| FR (1) | FR2974531B1 (OSRAM) |
| TW (1) | TWI525183B (OSRAM) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8790160B2 (en) * | 2011-04-28 | 2014-07-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and method for polishing phase change alloys |
| JP2013084876A (ja) * | 2011-09-30 | 2013-05-09 | Fujimi Inc | 研磨用組成物 |
| JP2013080751A (ja) * | 2011-09-30 | 2013-05-02 | Fujimi Inc | 研磨用組成物 |
| WO2013077369A1 (ja) * | 2011-11-25 | 2013-05-30 | 株式会社 フジミインコーポレーテッド | 研磨用組成物 |
| JP6139975B2 (ja) * | 2013-05-15 | 2017-05-31 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| WO2014184708A2 (en) * | 2013-05-15 | 2014-11-20 | Basf Se | Use of a chemical-mechanical polishing (cmp) composition for polishing a substrate or layer containing at least one iii-v material |
| JP6366952B2 (ja) * | 2013-08-29 | 2018-08-01 | 住友化学株式会社 | ニオブ酸系強誘電体薄膜素子の製造方法 |
| KR102212377B1 (ko) | 2014-06-16 | 2021-02-04 | 삼성전자주식회사 | 상변화 메모리 소자의 제조 방법 |
| CN112353753A (zh) * | 2020-11-17 | 2021-02-12 | 四川大学华西医院 | 一种靶向中枢神经系统的纳米药物载体 |
| EP4490772A4 (en) * | 2022-03-10 | 2025-06-25 | FUJIFILM Electronic Materials U.S.A, Inc. | ETCHING COMPOSITIONS |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7064070B2 (en) * | 1998-09-28 | 2006-06-20 | Tokyo Electron Limited | Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process |
| US6176895B1 (en) * | 1998-11-04 | 2001-01-23 | Desimone Joseph M. | Polymers for metal extractions in carbon dioxide |
| EP2194570A1 (en) * | 1998-12-28 | 2010-06-09 | Hitachi Chemical Co., Ltd. | Materials for polishing liquid for metal, polishing liquid for metal, mehtod for preparation thereof and polishing method using the same |
| KR100464429B1 (ko) * | 2002-08-16 | 2005-01-03 | 삼성전자주식회사 | 화학 기계적 폴리싱 슬러리 및 이를 사용한 화학 기계적폴리싱 방법 |
| US6776810B1 (en) * | 2002-02-11 | 2004-08-17 | Cabot Microelectronics Corporation | Anionic abrasive particles treated with positively charged polyelectrolytes for CMP |
| US6884144B2 (en) * | 2002-08-16 | 2005-04-26 | Micron Technology, Inc. | Methods and systems for planarizing microelectronic devices with Ge-Se-Ag layers |
| JP4212861B2 (ja) * | 2002-09-30 | 2009-01-21 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いたシリコンウエハの研磨方法、並びにリンス用組成物及びそれを用いたシリコンウエハのリンス方法 |
| US7300601B2 (en) * | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
| TWI347969B (en) * | 2003-09-30 | 2011-09-01 | Fujimi Inc | Polishing composition |
| KR100672940B1 (ko) * | 2004-08-03 | 2007-01-24 | 삼성전자주식회사 | 금속막을 위한 화학적기계적 연마 슬러리 및 이를 이용한금속막의 화학적기계적 연마 방법 |
| CN1300271C (zh) * | 2004-09-24 | 2007-02-14 | 中国科学院上海微系统与信息技术研究所 | 硫系化合物相变材料化学机械抛光的纳米抛光液及其应用 |
| EA014409B1 (ru) * | 2005-01-18 | 2010-12-30 | Айдахо Рисерч Фаундейшн, Инк. | Способ извлечения металла из металлосодержащего материала экстракцией |
| EP1899111A2 (en) * | 2005-06-06 | 2008-03-19 | Advanced Technology Materials, Inc. | Integrated chemical mechanical polishing composition and process for single platen processing |
| US7897061B2 (en) * | 2006-02-01 | 2011-03-01 | Cabot Microelectronics Corporation | Compositions and methods for CMP of phase change alloys |
| US8518296B2 (en) * | 2007-02-14 | 2013-08-27 | Micron Technology, Inc. | Slurries and methods for polishing phase change materials |
| MY155239A (en) * | 2007-07-26 | 2015-09-30 | Cabot Microelectronics Corp | Compositions and methods for chemical-mechanical polishing of phase change materials |
| US7915071B2 (en) * | 2007-08-30 | 2011-03-29 | Dupont Air Products Nanomaterials, Llc | Method for chemical mechanical planarization of chalcogenide materials |
| KR101198100B1 (ko) * | 2007-12-11 | 2012-11-09 | 삼성전자주식회사 | 상변화 물질층 패턴의 형성 방법, 상변화 메모리 장치의제조 방법 및 이에 사용되는 상변화 물질층 연마용 슬러리조성물 |
| CN101372606B (zh) * | 2008-10-14 | 2013-04-17 | 中国科学院上海微系统与信息技术研究所 | 用氧化铈化学机械抛光液抛光硫系化合物相变材料的方法 |
| US8735293B2 (en) * | 2008-11-05 | 2014-05-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and methods relating thereto |
| US20100130013A1 (en) * | 2008-11-24 | 2010-05-27 | Applied Materials, Inc. | Slurry composition for gst phase change memory materials polishing |
| JP2013533614A (ja) * | 2010-06-01 | 2013-08-22 | アプライド マテリアルズ インコーポレイテッド | 銅ウエハ研磨の化学的平坦化 |
| US20120003834A1 (en) * | 2010-07-01 | 2012-01-05 | Koo Ja-Ho | Method Of Polishing Chalcogenide Alloy |
| US20120001118A1 (en) * | 2010-07-01 | 2012-01-05 | Koo Ja-Ho | Polishing slurry for chalcogenide alloy |
| US8790160B2 (en) * | 2011-04-28 | 2014-07-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and method for polishing phase change alloys |
| US8309468B1 (en) * | 2011-04-28 | 2012-11-13 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and method for polishing germanium-antimony-tellurium alloys |
-
2011
- 2011-04-28 US US13/096,707 patent/US8790160B2/en not_active Expired - Fee Related
-
2012
- 2012-04-10 TW TW101112579A patent/TWI525183B/zh not_active IP Right Cessation
- 2012-04-18 DE DE102012007812A patent/DE102012007812A1/de not_active Withdrawn
- 2012-04-24 JP JP2012098808A patent/JP5960489B2/ja not_active Expired - Fee Related
- 2012-04-26 CN CN201210139124.9A patent/CN102756325B/zh not_active Expired - Fee Related
- 2012-04-27 FR FR1253892A patent/FR2974531B1/fr not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2012235111A5 (OSRAM) | ||
| JP2010114446A5 (OSRAM) | ||
| JP2012235110A5 (OSRAM) | ||
| JP6762390B2 (ja) | 研磨用組成物、研磨方法および基板の製造方法 | |
| JP2011192995A5 (OSRAM) | ||
| JP6093846B2 (ja) | コバルト除去のための研磨スラリー | |
| JP2011205096A5 (OSRAM) | ||
| TW524836B (en) | Composition and method for planarizing surfaces | |
| JP2010535424A5 (OSRAM) | ||
| JP2010267960A5 (OSRAM) | ||
| JP2010153853A5 (OSRAM) | ||
| JP2013042132A5 (OSRAM) | ||
| JP2015188093A5 (OSRAM) | ||
| JP2009540575A5 (OSRAM) | ||
| JP2019036714A5 (OSRAM) | ||
| JP2013042131A5 (OSRAM) | ||
| EP1994106A1 (en) | Free radical-forming activator attached to solid and used to enhance cmp formulations | |
| TW201142933A (en) | Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride | |
| TW201101378A (en) | Method for polishing the edge of a semiconductor wafer | |
| JP2009513028A5 (OSRAM) | ||
| TW201116614A (en) | Abrasive agent, condensed one-liquid type abrasive agent, two-liquid type abrasive agent and polishing method of substrate | |
| JP2009525615A5 (OSRAM) | ||
| JP2009033159A5 (OSRAM) | ||
| JP2009540575A (ja) | 窒化シリコン材料を研磨するための組成物および方法 | |
| TWI525183B (zh) | 用於研磨相變合金之化學機械研磨組成物及方法 |