JP2012230751A - 磁気抵抗センサ、装置および方法 - Google Patents
磁気抵抗センサ、装置および方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 6
- 230000005291 magnetic effect Effects 0.000 claims description 46
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- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims description 2
- 229910001120 nichrome Inorganic materials 0.000 claims description 2
- 238000010292 electrical insulation Methods 0.000 claims 6
- 230000005294 ferromagnetic effect Effects 0.000 claims 5
- 238000000151 deposition Methods 0.000 claims 4
- 229910045601 alloy Inorganic materials 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 2
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- 229910052737 gold Inorganic materials 0.000 claims 1
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- 229910052709 silver Inorganic materials 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 5
- 239000012212 insulator Substances 0.000 abstract description 3
- 239000002184 metal Substances 0.000 description 8
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- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/398—Specially shaped layers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
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Abstract
【解決手段】 センサは、浮上面に沿って上部電極と下部電極との間に配置された磁気反応性スタックである。センサ内の電流がスタックと少なくとも1つの電極との間の第1の多層絶縁構造によって浮上面近くの領域に制限されることで、読取機の感度が向上する。
【選択図】 図11
Description
2010年3月19日付け提出の「TRILAYER READER WITH CURRENT CONSTRAINT AT THE ABS」と題された米国出願番号第12/727,698号を参照し、引用によって援用する。
磁気抵抗センサは、浮上面(Air Bearing Surface)に沿って上部電極と下部電極との間に配置された磁気反応性スタックを含む。スタックを通る電流が浮上面近傍に制限されて感度が増すように、スタックと少なくとも1つの電極との間に多層絶縁構造がある。
シールドとシールドとの間隔の減少は、2つの自由層を有する3層読取機の使用によって実現することができる。3層構造では、磁化がハサミ状の配向である2つの自由層を用いて媒体の磁束を検出する。合成反強磁性(SAF)および反強磁性(AFM)層は不要であり、自由層のバイアスは、自由層双方の端部が浮上面(air bearing surface)にあるときの、後端の永久磁石と減磁界との組合せから生じる。PMは、ABS面よりも奥にあるので、PM材料特性およびバイアス磁界を犠牲にすることなくシールドとシールドの間隔をより小さくする機能は妨げられない。ストライプ高さおよび後端の磁気バイアスが小さい3層読取機は、高い読出信号を有するが、磁気的には不安定でプロセス変動の影響を非常に受けやすい。
Claims (20)
- 磁気抵抗センサであって、
浮上面(ABS)に沿って上部電極と下部電極との間に配置された磁気反応性スタックと、
磁気反応性スタックおよび少なくとも1つの電極の間の第1の多層絶縁構造とを備え、 前記第1の多層絶縁層構造は、第1の電気絶縁層および第1の非磁性導電層を含み、
前記第1の電気絶縁層および前記第1の非磁性導電層は、前記磁気反応性スタックの異なる部分に接触する、磁気抵抗センサ。 - 前記上部電極の一部分と3層スタックの一部分との間に第2の電気絶縁層をさらに備える、請求項1に記載のセンサ。
- 前記第2の電気絶縁層は、前記第2の電気絶縁層と第2の非磁性導電層とを含む第2の多層絶縁構造の一部であり、前記第2の電気絶縁層および前記第2の非磁性導電層は、前記磁気反応性スタックの異なる部分に接触する、請求項2に記載のセンサ。
- 前記下部電極および第1の上部非磁性導電層は、同様の化学機械研磨速度を有する、請求項2に記載のセンサ。
- 前記第1の非磁性導電層は、Ru、Ta、Cr、およびNiCrのうち1つを含む、請求項2に記載のセンサ。
- 3層スタックの強磁性層それぞれの磁化の配向は、互いにほぼ垂直であり、浮上面に対して約45度である、請求項1に記載のセンサ。
- 3層スタックの前記非磁性層は導電体である、請求項1に記載のセンサ。
- 前記3層スタックの前記非磁性層は、Cu、Ag、Au、またはその合金のうち1つを含む、請求項7に記載のセンサ。
- 3層スタックの前記非磁性層は電気絶縁体である、請求項1に記載のセンサ。
- 前記3層スタックの前記非磁性層は、Al2Ox、TiOx、およびMgOからなる群より選択される、請求項9に記載のセンサ。
- 3層スタックの強磁性層は自由層である、請求項1に記載のセンサ。
- 前記自由層は、FeCoB、NiFeCo、CoFeHf、NiFe、またはその合金のうち1つを含む、請求項11に記載のセンサ。
- 浮上面(ABS)に沿って上部電極と下部電極との間に配置された3層スタックを備え、前記スタックは、非磁性層によって隔てられた第1の強磁性層および第2の強磁性層を含み、さらに、
ABSの遠位において前記3層スタックの後端に隣接するバックバイアス磁石と、
前記3層スタックおよび前記下部電極に接触する第1の多層絶縁積層と、を備える装置であって、
前記第1の多層絶縁積層は、第1の電気絶縁層および第1の非磁性導電層を含み、前記第1の電気絶縁層および前記第1の非磁性導電層は、前記3層スタックの異なる部分に接触する、装置。 - 前記下部電極および前記第1の非磁性導電層は、同様の化学機械研磨速度を有する、請求項13に記載の装置。
- 前記上部電極と前記3層スタックの一部分とに接触する第2の電気絶縁層をさらに備える、請求項13に記載の装置。
- 前記第2の電気絶縁層は、第2の非磁性導電層を有する第2の多層絶縁積層の一部であり、前記第2の電気絶縁層および前記第2の非磁性導電層は、前記3層スタックの異なる部分に接触する、請求項15に記載の装置。
- 前記3層スタックの前記強磁性層それぞれの磁化の配向は、互いにほぼ垂直であり、浮上面に対して約45度である、請求項13に記載の装置。
- 第1の電極を形成するステップと、
前記第1の電極の絶縁部分を除去するステップと、
第1の電極絶縁層を堆積するステップと、
前記第1の電気絶縁層の導電部分を除去するステップと、
前記導電部分に非磁性導電層を堆積するステップと、
前記非磁性導電層、前記電気絶縁層、および前記第1の電極を研磨して、実質的に平坦な面を作製するステップと、
前記実質的に平坦な面上にシード層を堆積して、前記非磁性導電層、前記電気絶縁層、および前記第1の電極に接触させるステップと、を含む、方法。 - 前記シード層上に複数の磁性自由層を堆積して、磁気反応性センサを形成するステップをさらに含む、請求項18に記載の方法。
- 前記非磁性導電層および前記第1の電極は、一致した所定の化学機械研磨速度を有する、請求項18に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/093,365 US8390963B2 (en) | 2011-04-25 | 2011-04-25 | Trilayer reader with current constraint at the ABS |
US13/093,365 | 2011-04-25 |
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JP2012230751A true JP2012230751A (ja) | 2012-11-22 |
JP2012230751A5 JP2012230751A5 (ja) | 2013-02-14 |
JP5625012B2 JP5625012B2 (ja) | 2014-11-12 |
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US (1) | US8390963B2 (ja) |
JP (1) | JP5625012B2 (ja) |
CN (1) | CN102760446B (ja) |
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CN102760446A (zh) | 2012-10-31 |
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US8390963B2 (en) | 2013-03-05 |
US20120268847A1 (en) | 2012-10-25 |
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