JP2012160963A - Saw oscillator - Google Patents

Saw oscillator Download PDF

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JP2012160963A
JP2012160963A JP2011020046A JP2011020046A JP2012160963A JP 2012160963 A JP2012160963 A JP 2012160963A JP 2011020046 A JP2011020046 A JP 2011020046A JP 2011020046 A JP2011020046 A JP 2011020046A JP 2012160963 A JP2012160963 A JP 2012160963A
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recess
substrate portion
substrate
acoustic wave
main surface
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JP5302988B2 (en
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Terumi Hirayama
輝美 平山
Yoshiharu Yamagishi
義晴 山岸
Hiroyuki Ishikawa
広幸 石川
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Kyocera Crystal Device Corp
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Kyocera Crystal Device Corp
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Abstract

PROBLEM TO BE SOLVED: To improve productivity and reliability by reducing a frequency deviation between before and after seam welding.SOLUTION: A SAW oscillator includes: an element mounting member 10 comprising a flat substrate part 11, a frame part 12 disposed on one principal surface of the substrate part 11 to form a recessed region, a mounting part 13 disposed on the substrate part 11 within the recessed region, and a cushioning part 14a disposed on the substrate part 11 within the recessed region; a surface acoustic wave element 30 disposed on the mounting part 13; an integrated circuit element 20 mounted on the element mounting member 10; and a lid member 40 closing the recessed region. The surface acoustic wave element 30 is cantilevered over the substrate part 11 within the recessed region. The cushioning part 14a is disposed in the position where a first centerline CL1 passing the center of a principal surface of the mounting part 13 facing the lid member and parallel to one longer side over the principal surface of the substrate part 11 within the recessed region intersects a second centerline CL2 passing the middles of two longer sides over the principal surface of the substrate part 11 within the recessed region.

Description

本発明は、電子機器に用いられるSAW発振器に関する。   The present invention relates to a SAW oscillator used in electronic equipment.

従来から、電子機器に組み込まれるタイミングデバイスとして、圧電発振器が幅広く用いられている。
ここでは電子デバイスの一つであるSAW発振器について説明する。
Conventionally, piezoelectric oscillators have been widely used as timing devices incorporated in electronic equipment.
Here, a SAW oscillator which is one of electronic devices will be described.

例えばSAW発振器は、平板状の基板部と、前記基板部の一方の主面に設けられた凹部を形成し前記基板部側と相対する主面に接合用の金属層が形成される枠部と、凹部内側に露出する基板部上に設けられる搭載部と、凹部内側に露出する基板部上に設けられる緩衝部と、を備えて構成される素子搭載部材と、前記搭載部上に導電性接着剤等を介して設けられる四角形の表面弾性波素子と、前記素子搭載部材に搭載される集積回路素子と、前記凹部を塞ぐ蓋部材と、を備えて構成されている。また、前記表面弾性波素子は、前記搭載部に片持ち状態で搭載される。このとき表面弾性波素子は、一方の主面に櫛形状の電極パターン及び前記電極パターンを挟むように両側に格子状の反射電極パターンが設けられており、他方の主面の自由端側が緩衝部と接触している。   For example, a SAW oscillator includes a flat plate-shaped substrate portion, a frame portion in which a concave portion provided on one main surface of the substrate portion is formed, and a bonding metal layer is formed on the main surface facing the substrate portion side. An element mounting member comprising: a mounting portion provided on the substrate portion exposed to the inside of the concave portion; and a buffer portion provided on the substrate portion exposed to the inner side of the concave portion; and conductive adhesion on the mounting portion A rectangular surface acoustic wave element provided via an agent, an integrated circuit element mounted on the element mounting member, and a lid member that closes the recess. The surface acoustic wave device is mounted in a cantilever state on the mounting portion. At this time, the surface acoustic wave element has a comb-like electrode pattern on one main surface and a grid-like reflective electrode pattern on both sides so as to sandwich the electrode pattern, and the free end side of the other main surface is a buffer portion In contact with.

特開平6−291593号公報JP-A-6-291593

しかしながら、従来のSAW発振器は、前記表面弾性波素子を搭載した素子搭載部材と、前記蓋部材とを前記素子搭載部材の枠部に設けられた接合用の金属層を介してシーム溶接にて封止することにより、素子搭載部材の長手方向に反りが発生する。この反りは、素子搭載部材に設けられた緩衝部を押し上げ、緩衝部に接触している表面弾性波素子に応力を与える。ここでこのようなSAW発振器におけるシーム溶接前の周波数を基準としシーム溶接後の周波数との差(以下、周波数偏差という)を、縦軸に周波数値、横軸に測定項目としたグラフを用いて説明する。(図5(b)を参照)また、例えばグラフ上の上限周波数変動値(以下、上限値という)は、シーム溶接前の周波数を基準としシーム溶接後の周波数との差がプラス方向に最大となった値である。また、グラフ上の下限周波数変動値(以下、下限値という)は、シーム溶接前の周波数を基準としシーム溶接後の周波数との差が上限値より最小となった値である。このとき従来の緩衝部位置での周波数偏差は、上限値+7.0E×−06から下限値−19.0E×−06と、上限値と下限値の幅が大きな値となり、SAW発振器の生産性及び信頼性を下げるおそれがある。   However, in the conventional SAW oscillator, the element mounting member on which the surface acoustic wave element is mounted and the lid member are sealed by seam welding via a joining metal layer provided on a frame portion of the element mounting member. By stopping, warpage occurs in the longitudinal direction of the element mounting member. This warp pushes up the buffer portion provided in the element mounting member, and applies stress to the surface acoustic wave device in contact with the buffer portion. Here, using a graph in which the difference between the frequency after seam welding (hereinafter referred to as frequency deviation) with the frequency before seam welding as a reference in such a SAW oscillator is used as a frequency value on the vertical axis and the measurement item on the horizontal axis. explain. In addition, for example, the upper limit frequency fluctuation value (hereinafter referred to as the upper limit value) on the graph is based on the frequency before seam welding and the difference from the frequency after seam welding is maximum in the plus direction. It is the value that became. Further, the lower limit frequency fluctuation value (hereinafter referred to as the lower limit value) on the graph is a value in which the difference from the frequency after seam welding is minimized from the upper limit value based on the frequency before seam welding. At this time, the frequency deviation at the position of the conventional buffer portion is from the upper limit value + 7.0E × −06 to the lower limit value −19.0E × −06, and the range between the upper limit value and the lower limit value is large, and the productivity of the SAW oscillator is increased. And may reduce reliability.

そこで、本発明では、前記した問題を解決し、周波数偏差が少なく、生産性及び信頼性を向上させたSAW発振器を提供することを課題とする。   Accordingly, an object of the present invention is to provide a SAW oscillator that solves the above-described problems, has a small frequency deviation, and has improved productivity and reliability.

前記課題を解決するため、本発明は、平板状の基板部と、前記基板部の一方の主面に設けられて凹部を形成し、前記基板部側と相対する主面に接合用の金属層が形成されている枠部と、凹部内側の基板部上に設けられる搭載部と、凹部内側の基板部上に設けられる緩衝部と、を備えて構成される素子搭載部材と、前記搭載部上に導電性接着剤を介して設けられる四角形の表面弾性波素子と、前記素子搭載部材に搭載される集積回路素子と、前記凹部を塞ぐ蓋部材と、を備え、前記表面弾性波素子が片持ち支持され、前記凹部内側の基板部上に設けられる。例えば前記緩衝部は、前記搭載部の蓋部材側を向く主面の中心を通り前記凹部の基板部の主面上において1つの長辺と平行となる第1の中心線と、前記凹部の基板部の主面上において2つの長辺の中心を通る第2の中心線と、が交差する位置に設けられることを特徴とする。   In order to solve the above-mentioned problems, the present invention provides a flat plate-like substrate portion, a concave portion provided on one main surface of the substrate portion, and a metal layer for bonding on the main surface facing the substrate portion side. Formed on the substrate portion inside the recess, a buffer portion provided on the substrate portion inside the recess, and an element mounting member configured on the mounting portion. A surface acoustic wave element having a rectangular shape provided with a conductive adhesive, an integrated circuit element mounted on the element mounting member, and a lid member that closes the recess, and the surface acoustic wave element is cantilevered Supported and provided on the substrate portion inside the recess. For example, the buffer part passes through the center of the main surface facing the lid member side of the mounting part, passes through the center of the main part of the substrate part of the concave part and is parallel to one long side, and the substrate of the concave part It is provided in the position which cross | intersects with the 2nd centerline which passes along the center of two long sides on the main surface of a part.

また、本発明は、平板状の基板部と、前記基板部の一方の主面に設けられて凹部を形成し、前記基板部側と相対する主面に接合用の金属層が形成されている枠部と、凹部内側の基板部上に設けられる搭載部と、凹部内側の基板部上に設けられる緩衝部と、を備えて構成される素子搭載部材と、前記搭載部上に導電性接着剤を介して設けられる四角形の表面弾性波素子と、前記素子搭載部材に搭載される集積回路素子と、前記凹部を塞ぐ蓋部材と、を備え、前記表面弾性波素子が片持ち支持され、前記凹部内側の基板部上に設けられる。前記緩衝部は、前記搭載部の蓋部材側を向く主面の中心を通り前記凹部の基板部の主面上において1つの長辺と平行となる第1の中心線と、前記凹部の基板部の主面上において2つの長辺の中心を通る第2の中心線と、が交差する位置より前記表面弾性波素子の自由端側に向かい、前記凹部の基板部の長辺寸法の8%ずれた位置にあることを特徴とする。   In the present invention, a flat substrate portion and a concave portion are formed on one main surface of the substrate portion, and a bonding metal layer is formed on the main surface facing the substrate portion side. An element mounting member comprising a frame, a mounting portion provided on the substrate portion inside the recess, and a buffer portion provided on the substrate portion inside the recess, and a conductive adhesive on the mounting portion A surface acoustic wave element having a quadrangular shape, an integrated circuit element mounted on the element mounting member, and a lid member that closes the recess, the surface acoustic wave element being cantilevered, and the recess It is provided on the inner substrate portion. The buffer portion passes through the center of the main surface facing the lid member side of the mounting portion, passes through the center of the main surface of the substrate portion of the recess and is parallel to one long side, and the substrate portion of the recess 8% of the long side dimension of the substrate portion of the recess from the position where the second center line passing through the center of the two long sides intersects the free end of the surface acoustic wave element. It is in the position.

また、本発明は、平板状の基板部と、前記基板部の一方の主面に設けられて凹部を形成し、前記基板部側と相対する主面に接合用の金属層が形成されている枠部と、凹部内側の基板部上に設けられる搭載部と、凹部内側の基板部上に設けられる緩衝部と、を備えて構成される素子搭載部材と、前記搭載部上に導電性接着剤を介して設けられる四角形の表面弾性波素子と、前記素子搭載部材に搭載される集積回路素子と、前記凹部を塞ぐ蓋部材と、を備え、前記表面弾性波素子が片持ち支持され、前記凹部内側の基板部上に設けられる。前記緩衝部は、前記搭載部の蓋部材側を向く主面の中心を通り前記凹部の基板部の主面上において1つの長辺と平行となる第1の中心線と、前記凹部の基板部の主面上において2つの長辺の中心を通る第2の中心線と、が交差する位置より前記表面弾性波素子の自由端側に向かい、前記凹部の基板部の長辺寸法の16%ずれた位置にあることを特徴とする。   In the present invention, a flat substrate portion and a concave portion are formed on one main surface of the substrate portion, and a bonding metal layer is formed on the main surface facing the substrate portion side. An element mounting member comprising a frame, a mounting portion provided on the substrate portion inside the recess, and a buffer portion provided on the substrate portion inside the recess, and a conductive adhesive on the mounting portion A surface acoustic wave element having a quadrangular shape, an integrated circuit element mounted on the element mounting member, and a lid member that closes the recess, the surface acoustic wave element being cantilevered, and the recess It is provided on the inner substrate portion. The buffer portion passes through the center of the main surface facing the lid member side of the mounting portion, passes through the center of the main surface of the substrate portion of the recess and is parallel to one long side, and the substrate portion of the recess 16% of the long side dimension of the substrate portion of the concave portion from the position where the second center line passing through the center of the two long sides intersects the free end of the surface acoustic wave element. It is in the position.

また、本発明は、平板状の基板部と、前記基板部の一方の主面に設けられて凹部を形成し、前記基板部側と相対する主面に接合用の金属層が形成されている枠部と、凹部内側の基板部上に設けられる搭載部と、凹部内側の基板部上に設けられる緩衝部と、を備えて構成される素子搭載部材と、前記搭載部上に導電性接着剤を介して設けられる四角形の表面弾性波素子と、前記素子搭載部材に搭載される集積回路素子と、前記凹部を塞ぐ蓋部材と、を備え、前記表面弾性波素子が片持ち支持され、前記凹部内側の基板部上に設けられる。前記緩衝部は、前記搭載部の蓋部材側を向く主面の中心を通り前記凹部の基板部の主面上において1つの長辺と平行となる第1の中心線と、前記凹部の基板部の主面上において2つの長辺の中心を通る第2の中心線と、が交差する位置から前記表面弾性波素子の自由端側へ、前記凹部の基板部の長辺寸法の16%ずれた位置までにあることを特徴とする。   In the present invention, a flat substrate portion and a concave portion are formed on one main surface of the substrate portion, and a bonding metal layer is formed on the main surface facing the substrate portion side. An element mounting member comprising a frame, a mounting portion provided on the substrate portion inside the recess, and a buffer portion provided on the substrate portion inside the recess, and a conductive adhesive on the mounting portion A surface acoustic wave element having a quadrangular shape, an integrated circuit element mounted on the element mounting member, and a lid member that closes the recess, the surface acoustic wave element being cantilevered, and the recess It is provided on the inner substrate portion. The buffer portion passes through the center of the main surface facing the lid member side of the mounting portion, passes through the center of the main surface of the substrate portion of the recess and is parallel to one long side, and the substrate portion of the recess 16% of the long side dimension of the substrate portion of the recess is shifted from the position where the second center line passing through the center of the two long sides intersects the free end of the surface acoustic wave device. It is characterized by being in position.

このような本発明のSAW発振器によれば、表面弾性波素子は、素子搭載部材と、蓋部材と、を前記素子搭載部材の枠部に設けられた接合用の金属層を介してシーム溶接にて封止することにより、前記蓋部材が加熱され前記蓋部材と前記素子搭載部材の枠部に設けられた接合用の金属層が溶融し接合される。このとき加熱され溶融した金属部分の熱が冷める事により金属の収縮が起こり、素子搭載部材の長手方向に反りが発生する。この反りは、素子搭載部材に設けられた緩衝部を押し上げることとなるが、緩衝部の位置が、前記搭載部の蓋部材側を向く主面の中心を通り前記凹部の基板部の主面上において1つの長辺と平行となる第1の中心線と、前記凹部の基板部の主面上において2つの長辺の中心を通る第2の中心線と、が交差する位置に設けられているため、前記緩衝部が前記表面弾性波素子を押し上げにくくすることができる。したがって、本発明のSAW発振器は、シーム溶接後の周波数偏差を小さくすることができ、生産性及び信頼性を向上させることが出来る。   According to such a SAW oscillator of the present invention, the surface acoustic wave element is formed by seam welding the element mounting member and the lid member via the joining metal layer provided on the frame portion of the element mounting member. By sealing, the lid member is heated and the joining metal layer provided on the frame portion of the lid member and the element mounting member is melted and joined. At this time, when the heat of the heated and melted metal portion cools, the metal contracts and warps in the longitudinal direction of the element mounting member. This warping pushes up the buffer portion provided in the element mounting member, but the position of the buffer portion passes through the center of the main surface facing the lid member side of the mounting portion and is on the main surface of the substrate portion of the recess. The first center line that is parallel to one long side and the second center line that passes through the center of the two long sides on the main surface of the substrate portion of the recess are provided at a position where they intersect. Therefore, it is possible to make it difficult for the buffer portion to push up the surface acoustic wave element. Therefore, the SAW oscillator of the present invention can reduce the frequency deviation after seam welding, and can improve productivity and reliability.

また、本発明のSAW発振器によれば、表面弾性波素子は、素子搭載部材と、蓋部材と、を前記素子搭載部材の枠部に設けられた接合用の金属層を介してシーム溶接にて封止することにより、前記蓋部材が加熱され前記蓋部材と前記素子搭載部材の枠部に設けられた接合用の金属層が溶融し接合される。このとき加熱され溶融した金属部分の熱が冷める事により金属の収縮が起こり、素子搭載部材の長手方向に反りが発生する。この反りは、素子搭載部材に設けられた緩衝部を押し上げることとなるが、緩衝部の位置が、前記搭載部の蓋部材側を向く主面の中心を通り前記凹部の基板部の主面上において1つの長辺と平行となる第1の中心線と、前記凹部の基板部の主面上において2つの長辺の中心を通る第2の中心線と、が交差する位置より前記表面弾性波素子の自由端側に向かい、前記凹部の基板部の長辺寸法の8%ずれた位置に設けられているため、前記緩衝部が前記表面弾性波素子を押し上げにくくすることができる。したがって、本発明のSAW発振器は、シーム溶接後の周波数偏差を小さくすることができ、生産性及び信頼性を向上させることが出来る。   According to the SAW oscillator of the present invention, the surface acoustic wave element is formed by seam welding of the element mounting member and the lid member via the metal layer for bonding provided on the frame portion of the element mounting member. By sealing, the lid member is heated, and the joining metal layer provided on the lid member and the frame portion of the element mounting member is melted and joined. At this time, when the heat of the heated and melted metal portion cools, the metal contracts and warps in the longitudinal direction of the element mounting member. This warping pushes up the buffer portion provided in the element mounting member, but the position of the buffer portion passes through the center of the main surface facing the lid member side of the mounting portion and is on the main surface of the substrate portion of the recess. The surface acoustic wave from a position where a first center line parallel to one long side and a second center line passing through the center of the two long sides on the main surface of the substrate portion of the recess intersect. Since it is provided at a position shifted by 8% of the long side dimension of the substrate portion of the concave portion toward the free end side of the device, the buffer portion can make it difficult to push up the surface acoustic wave device. Therefore, the SAW oscillator of the present invention can reduce the frequency deviation after seam welding, and can improve productivity and reliability.

また、本発明のSAW発振器によれば、表面弾性波素子は、素子搭載部材と、蓋部材と、を前記素子搭載部材の枠部に設けられた接合用の金属層を介してシーム溶接にて封止することにより、前記蓋部材が加熱され前記蓋部材と前記素子搭載部材の枠部に設けられた接合用の金属層が溶融し接合される。このとき加熱され溶融した金属部分の熱が冷める事により金属の収縮が起こり、素子搭載部材の長手方向に反りが発生する。この反りは、素子搭載部材に設けられた緩衝部を押し上げることとなるが、緩衝部の位置が、前記搭載部の蓋部材側を向く主面の中心を通り前記凹部の基板部の主面上において1つの長辺と平行となる第1の中心線と、前記凹部の基板部の主面上において2つの長辺の中心を通る第2の中心線と、が交差する位置より前記表面弾性波素子の自由端側に向かい、前記凹部の基板部の長辺寸法の16%ずれた位置に設けられているため、前記緩衝部が前記表面弾性波素子を押し上げにくくすることができる。したがって、本発明のSAW発振器は、シーム溶接後の周波数偏差を小さくすることができ、生産性及び信頼性を向上させることが出来る。   According to the SAW oscillator of the present invention, the surface acoustic wave element is formed by seam welding of the element mounting member and the lid member via the metal layer for bonding provided on the frame portion of the element mounting member. By sealing, the lid member is heated, and the joining metal layer provided on the lid member and the frame portion of the element mounting member is melted and joined. At this time, when the heat of the heated and melted metal portion cools, the metal contracts and warps in the longitudinal direction of the element mounting member. This warping pushes up the buffer portion provided in the element mounting member, but the position of the buffer portion passes through the center of the main surface facing the lid member side of the mounting portion and is on the main surface of the substrate portion of the recess. The surface acoustic wave from a position where a first center line parallel to one long side and a second center line passing through the center of the two long sides on the main surface of the substrate portion of the recess intersect. Since it is provided at a position shifted toward the free end side of the element by 16% of the long side dimension of the substrate portion of the concave portion, the buffer portion can make it difficult to push up the surface acoustic wave element. Therefore, the SAW oscillator of the present invention can reduce the frequency deviation after seam welding, and can improve productivity and reliability.

また、本発明のSAW発振器によれば、表面弾性波素子は、素子搭載部材と、蓋部材と、を前記素子搭載部材の枠部に設けられた接合用の金属層を介してシーム溶接にて封止することにより、前記蓋部材が加熱され前記蓋部材と前記素子搭載部材の枠部に設けられた接合用の金属層が溶融し接合される。このとき加熱され溶融した金属部分の熱が冷める事により金属の収縮が起こり、素子搭載部材の長手方向に反りが発生する。この反りは、素子搭載部材に設けられた緩衝部を押し上げることとなるが、緩衝部の位置が、前記搭載部の蓋部材側を向く主面の中心を通り前記凹部の基板部の主面上において1つの長辺と平行となる第1の中心線と、前記凹部の基板部の主面上において2つの長辺の中心を通る第2の中心線と、が交差する位置から前記表面弾性波素子の自由端側へ、前記凹部の基板部の長辺寸法の16%ずれた位置までに設けられているため、前記緩衝部が前記表面弾性波素子を押し上げにくくすることができる。したがって、本発明のSAW発振器は、シーム溶接後の周波数偏差を小さくすることができ、生産性及び信頼性を向上させることが出来る。   According to the SAW oscillator of the present invention, the surface acoustic wave element is formed by seam welding of the element mounting member and the lid member via the metal layer for bonding provided on the frame portion of the element mounting member. By sealing, the lid member is heated, and the joining metal layer provided on the lid member and the frame portion of the element mounting member is melted and joined. At this time, when the heat of the heated and melted metal portion cools, the metal contracts and warps in the longitudinal direction of the element mounting member. This warping pushes up the buffer portion provided in the element mounting member, but the position of the buffer portion passes through the center of the main surface facing the lid member side of the mounting portion and is on the main surface of the substrate portion of the recess. The surface acoustic wave from a position where a first center line parallel to one long side and a second center line passing through the center of the two long sides on the main surface of the substrate portion of the recess intersect. Since it is provided on the free end side of the element up to a position shifted by 16% of the long side dimension of the substrate portion of the concave portion, the buffer portion can make it difficult to push up the surface acoustic wave element. Therefore, the SAW oscillator of the present invention can reduce the frequency deviation after seam welding, and can improve productivity and reliability.

本発明の第1の実施形態に係るSAW発振器の一例を示す分解斜視図である。1 is an exploded perspective view showing an example of a SAW oscillator according to a first embodiment of the present invention. 本発明の第1の実施形態に係るSAW発振器に用いられる素子搭載部材の模式図である。It is a schematic diagram of the element mounting member used for the SAW oscillator which concerns on the 1st Embodiment of this invention. 本発明の実施形態に係るSAW発振器の一例を示す断面図である。It is sectional drawing which shows an example of the SAW oscillator which concerns on embodiment of this invention. 本発明の第2の実施形態に係るSAW発振器に用いられる素子搭載部材の模式図である。It is a schematic diagram of the element mounting member used for the SAW oscillator which concerns on the 2nd Embodiment of this invention. 本発明の第3の実施形態に係るSAW発振器に用いられる素子搭載部材の模式図である。It is a schematic diagram of the element mounting member used for the SAW oscillator which concerns on the 3rd Embodiment of this invention. SAW発振器におけるシーム溶接前の周波数とシーム溶接後の周波数との差のグラフであり、(a)は第1実施形態における周波数偏差のグラフであり、(b)は第2実施形態における周波数偏差のグラフであり、(c)は第3実施形態における周波数偏差のグラフである。It is a graph of the difference of the frequency before seam welding and the frequency after seam welding in a SAW oscillator, (a) is a graph of the frequency deviation in 1st Embodiment, (b) is the frequency deviation in 2nd Embodiment. It is a graph, (c) is a graph of the frequency deviation in 3rd Embodiment. 従来の形態に係るSAW発振器の一例を示し、(a)はSAW発振器の断面図であり、(b)はSAW発振器における素子搭載部材の模式平面図であり、(c)は従来位置における周波数偏差のグラフである。An example of a conventional SAW oscillator is shown, (a) is a sectional view of the SAW oscillator, (b) is a schematic plan view of an element mounting member in the SAW oscillator, and (c) is a frequency deviation at a conventional position. It is a graph of.

本発明を実施するための最良の形態(以下、「実施形態」という)について、適宜図面を参照しながら詳細に説明する。なお、各構成要素について、状態をわかりやすくするために、誇張して図示している。   The best mode for carrying out the present invention (hereinafter referred to as “embodiment”) will be described in detail with reference to the drawings as appropriate. Note that each component is exaggerated for easy understanding of the state.

(第1の実施形態)
図1及び図2に示すように、本発明の第1の実施形態に係るSAW発振器100は、凹部を有し凹部内側に形成される緩衝部14aを備える素子搭載部材10と、前記素子搭載部材10の凹部内側に搭載される表面弾性波素子30と、前記素子搭載部材10の凹部内側に搭載される集積回路素子20と、凹部を塞ぐ蓋部材40とから主に構成されている。
(First embodiment)
As shown in FIGS. 1 and 2, the SAW oscillator 100 according to the first embodiment of the present invention includes an element mounting member 10 having a recess and a buffer portion 14a formed inside the recess, and the element mounting member. The surface acoustic wave element 30 mounted inside the concave portion 10, the integrated circuit element 20 mounted inside the concave portion of the element mounting member 10, and the lid member 40 that closes the concave portion.

素子搭載部材10は、平板状の基板部11と、前記基板部11の一方の主面に設けられて凹部を形成する枠部12と、凹部内側の基板部上に設けられる搭載部13と、凹部内側の基板部上に設けられる緩衝部14aと、から形成されている。   The element mounting member 10 includes a flat substrate portion 11, a frame portion 12 provided on one main surface of the substrate portion 11 to form a recess, a mounting portion 13 provided on the substrate portion inside the recess, And a buffer portion 14a provided on the substrate portion inside the recess.

基板部11は、例えばアルミナセラミックス等のセラミックス材料よりなり、前記基板部11の一方の主面に形成された集積回路素子搭載パッド(図示せず)及び基板内部には所定の配線導体が形成され、他方の主面に外部端子(図示せず)が形成されている。   The substrate portion 11 is made of, for example, a ceramic material such as alumina ceramics. An integrated circuit element mounting pad (not shown) formed on one main surface of the substrate portion 11 and a predetermined wiring conductor are formed inside the substrate. An external terminal (not shown) is formed on the other main surface.

枠部12は、前記基板部11と同様にアルミナセラミックス等のセラミックス材料よりなり、前記基板部11の一方の主面に設けられて凹部を形成している。また、枠部12は、前記基板部側と相対する主面に接合用の金属層16が形成されている。   The frame portion 12 is made of a ceramic material such as alumina ceramics like the substrate portion 11 and is provided on one main surface of the substrate portion 11 to form a recess. Further, the frame portion 12 has a metal layer 16 for bonding formed on the main surface facing the substrate portion side.

搭載部13は、例えばアルミナセラミックス等のセラミックス材料よりなり、凹部内側の基板部上において所定の隅部に位置している。また、搭載部13は、例えば平面視において四角形の形状で形成されており、所定の厚さを有している。この搭載部13は、表面弾性波素子30を搭載するために用いられる。   The mounting portion 13 is made of a ceramic material such as alumina ceramic, and is located at a predetermined corner on the substrate portion inside the recess. Further, the mounting portion 13 is formed in, for example, a quadrangular shape in plan view, and has a predetermined thickness. The mounting portion 13 is used for mounting the surface acoustic wave element 30.

緩衝部14aは、例えばシリコン系の材料よりなり、凹部内側の基板部11上に設けられる。例えば前記緩衝部14aは、前記搭載部13の蓋部材側を向く主面の中心を通り前記凹部の基板部11の主面上において1つの長辺と平行となる第1の中心線CL1と、前記凹部の基板部11の主面上において2つの凹部内の長辺の中心を通る第2の中心線CL2と、が交差する位置に設けられている。   The buffer portion 14a is made of, for example, a silicon-based material, and is provided on the substrate portion 11 inside the recess. For example, the buffer portion 14a includes a first center line CL1 passing through the center of the main surface facing the lid member side of the mounting portion 13 and parallel to one long side on the main surface of the substrate portion 11 of the recess, On the main surface of the substrate portion 11 of the recess, the second center line CL2 passing through the center of the long side in the two recesses is provided at a position where it intersects.

表面弾性波素子30は、圧電素子と、前記圧電素子の一方の主面上に形成された電極パターンと、前記電極パターンと同一面上に形成された反射電極パターンとから構成されており、前記圧電素子の他方の主面上に前記電極パターン及び前記反射電極パターンが形成されていない。また、前記表面弾性波素子30は、前記搭載部13上に他方の主面を前記搭載部13側に向けて、導電性接着剤15を介して機械的に片持ち支持されている。また、前記電極パターンは、前記圧電素子の一方の主面上の中央部に櫛型状に形成されている。また、前記反射電極パターンは、前記電極パターンが形成されている同一面上に、前記電極パターンを挟むように両側に位置し格子状に形成されている。このとき、表面弾性波素子30は、前記搭載部13に搭載された場合、前記表面弾性波素子30の一方の主面が前記緩衝部14aと対向するようになっている。   The surface acoustic wave element 30 includes a piezoelectric element, an electrode pattern formed on one main surface of the piezoelectric element, and a reflective electrode pattern formed on the same plane as the electrode pattern. The electrode pattern and the reflective electrode pattern are not formed on the other main surface of the piezoelectric element. The surface acoustic wave element 30 is mechanically cantilevered on the mounting portion 13 with the other main surface facing the mounting portion 13 via a conductive adhesive 15. The electrode pattern is formed in a comb shape at the center on one main surface of the piezoelectric element. In addition, the reflective electrode pattern is formed in a lattice shape on both sides so as to sandwich the electrode pattern on the same surface on which the electrode pattern is formed. At this time, when the surface acoustic wave element 30 is mounted on the mounting portion 13, one main surface of the surface acoustic wave element 30 faces the buffer portion 14 a.

集積回路素子20は、凹部内側の基板部上に前記表面弾性波素子30と相対する位置に設けられている。また、集積回路素子20は、前記表面弾性波素子30とワイヤーボンディングにより電気的に接続され、(図示せず)前記基板部11の一方の主面に形成された集積回路素子搭載パッドと電気的に接続されている。(図示せず)また、集積回路素子20は、前記表面弾性波素子30の振動に基づいて発信出力を制御している。また、この集積回路素子20は、凹部内側の基板部11上であって、前記表面弾性波素子30と前記搭載部13と、ともに前記基板部11に設けられている。   The integrated circuit element 20 is provided at a position facing the surface acoustic wave element 30 on the substrate portion inside the recess. The integrated circuit element 20 is electrically connected to the surface acoustic wave element 30 by wire bonding, and is electrically connected to an integrated circuit element mounting pad formed on one main surface of the substrate portion 11 (not shown). It is connected to the. The integrated circuit element 20 controls the transmission output based on the vibration of the surface acoustic wave element 30 (not shown). Further, the integrated circuit element 20 is provided on the substrate portion 11 on the substrate portion 11 inside the recess, and both the surface acoustic wave element 30 and the mounting portion 13 are provided on the substrate portion 11.

蓋部材40は、例えば金属材料よりなり、四角形の金属から形成されている。また、蓋部材40は、前記素子搭載部材10と前記素子搭載部材10の枠部12に設けられた接合用の金属層16を介してシーム溶接で接合される。   The lid member 40 is made of, for example, a metal material and is formed of a square metal. The lid member 40 is joined by seam welding through the element mounting member 10 and the joining metal layer 16 provided on the frame portion 12 of the element mounting member 10.

シーム溶接は、溶接部に大電流を流し溶接部を加熱させ圧力を加えながら行う溶接方法である。   Seam welding is a welding method in which a large current is passed through a welded portion to heat the welded portion and apply pressure.

図2及び図3に示すように、前記素子搭載部材10と前記蓋部材40とを前記素子搭載部材10の枠部12に設けられた接合用の金属層16を介してシーム溶接することにより、前記蓋部材40が加熱され前記蓋部材40と前記素子搭載部材10の枠部12に設けられた接合用の金属層16が溶融し接合される。このとき加熱され溶融した金属部分の熱が冷める事により金属の収縮が起こり、前記素子搭載部材10の長手方向に反りが発生する。この反りは、前記素子搭載部材10に設けられた前記緩衝部14aを押し上げるが、前記搭載部13の蓋部材側を向く主面の中心を通り前記凹部の基板部11の主面上において1つの長辺と平行となる第1の中心線CL1と、前記凹部の基板部11の主面上において2つの長辺の中心を通る第2の中心線CL2と、が交差する位置に設けられているため、前記表面弾性波素子30は、前記緩衝部14aによる応力を受けにくくなる。   As shown in FIGS. 2 and 3, by seam welding the element mounting member 10 and the lid member 40 via a joining metal layer 16 provided on the frame portion 12 of the element mounting member 10, The lid member 40 is heated and the joining metal layer 16 provided on the frame portion 12 of the element mounting member 10 is melted and joined. At this time, when the heat of the heated and melted metal portion cools, the metal contracts and warps in the longitudinal direction of the element mounting member 10. This warp pushes up the buffer portion 14a provided in the element mounting member 10, but passes through the center of the main surface facing the lid member side of the mounting portion 13 and is on the main surface of the substrate portion 11 of the recess. The first center line CL1 that is parallel to the long side and the second center line CL2 that passes through the center of the two long sides on the main surface of the substrate portion 11 of the recess are provided at a position where they intersect. Therefore, the surface acoustic wave element 30 is less likely to receive stress due to the buffer portion 14a.

また、図6(a)のグラフは、第1の実施形態でのSAW発振器のシーム溶接前の周波数を基準としシーム溶接後の周波数との差(以下、周波数偏差という)を、縦軸に周波数値、横軸に測定項目で表したグラフである。また、例えばグラフ上の上限周波数変動値(以下、上限値という)は、シーム溶接前の周波数を基準としシーム溶接後の周波数との差がプラス方向に最大となった値である。また、グラフ上の下限周波数変動値(以下、下限値という)は、シーム溶接前の周波数を基準としシーム溶接後の周波数との差が上限値より最小となった値である。このときこの図6(a)に示すように、周波数偏差は、上限値+7.0E×−06から下限値+0.5E×−06であり、図7(b)の従来の緩衝部位置214での周波数偏差である上限値+7.0E×−06から下限値−19.0E×−06と比べると、第1の実施形態位置での上限値と下限値の幅が従来の緩衝部位置での上限値と下限値の幅よりも第1の実施形態位置の方の幅が小さくなる。したがって第1の実施形態は、SAW発振器の生産性及び信頼性を向上させることが可能となる。   In the graph of FIG. 6A, the difference between the frequency after seam welding (hereinafter referred to as the frequency deviation) with the frequency before seam welding of the SAW oscillator in the first embodiment as a reference, and the frequency on the vertical axis. It is a graph with a value and a measurement item on the horizontal axis. Further, for example, the upper limit frequency fluctuation value (hereinafter referred to as the upper limit value) on the graph is a value in which the difference from the frequency after seam welding is maximized in the positive direction with reference to the frequency before seam welding. Further, the lower limit frequency fluctuation value (hereinafter referred to as the lower limit value) on the graph is a value in which the difference from the frequency after seam welding is minimized from the upper limit value based on the frequency before seam welding. At this time, as shown in FIG. 6A, the frequency deviation is from the upper limit value + 7.0E × −06 to the lower limit value + 0.5E × −06, and at the conventional buffer portion position 214 of FIG. 7B. When compared with the upper limit value + 7.0E × −06, which is a frequency deviation of the above, from the lower limit value −19.0E × −06, the range of the upper limit value and the lower limit value at the position of the first embodiment is The width at the position of the first embodiment is smaller than the width between the upper limit value and the lower limit value. Therefore, the first embodiment can improve the productivity and reliability of the SAW oscillator.

(第2の実施形態)
図1及び図4に示すように、本発明の第2の実施形態に係るSAW発振器100は、凹部を有し凹部内側に形成される緩衝部14bを備える素子搭載部材10と、前記素子搭載部材10の凹部内側に搭載される表面弾性波素子30と、前記素子搭載部材10の凹部内側に搭載される集積回路素子20と、凹部を塞ぐ蓋部材40とから主に構成されている。
(Second Embodiment)
As shown in FIGS. 1 and 4, the SAW oscillator 100 according to the second embodiment of the present invention includes an element mounting member 10 having a recess and a buffer portion 14b formed inside the recess, and the element mounting member. The surface acoustic wave element 30 mounted inside the concave portion 10, the integrated circuit element 20 mounted inside the concave portion of the element mounting member 10, and the lid member 40 that closes the concave portion.

素子搭載部材10は、平板状の基板部11と、前記基板部11の一方の主面に設けられて凹部を形成する枠部12と、凹部内側の基板部上に設けられる搭載部13と、凹部内側の基板部上に設けられる緩衝部14bと、から形成されている。   The element mounting member 10 includes a flat substrate portion 11, a frame portion 12 provided on one main surface of the substrate portion 11 to form a recess, a mounting portion 13 provided on the substrate portion inside the recess, The buffer part 14b provided on the board | substrate part inside a recessed part is formed.

基板部11は、例えばアルミナセラミックス等のセラミックス材料よりなり、前記基板部11の一方の主面に形成された集積回路素子搭載パッド(図示せず)及び基板内部には所定の配線導体が形成され、他方の主面に外部端子(図示せず)が形成されている。   The substrate portion 11 is made of, for example, a ceramic material such as alumina ceramics. An integrated circuit element mounting pad (not shown) formed on one main surface of the substrate portion 11 and a predetermined wiring conductor are formed inside the substrate. An external terminal (not shown) is formed on the other main surface.

枠部12は、前記基板部11と同様にアルミナセラミックス等のセラミックス材料よりなり、前記基板部11の一方の主面に設けられて凹部を形成している。また、枠部12は、前記基板部側と相対する主面に接合用の金属層16が形成されている。   The frame portion 12 is made of a ceramic material such as alumina ceramics like the substrate portion 11 and is provided on one main surface of the substrate portion 11 to form a recess. Further, the frame portion 12 has a metal layer 16 for bonding formed on the main surface facing the substrate portion side.

搭載部13は、例えばアルミナセラミックス等のセラミックス材料よりなり、凹部内側の基板部上において所定の隅部に位置している。また、搭載部13は、例えば平面視において四角形の形状で形成されており、所定の厚さを有している。この搭載部13は、表面弾性波素子30を搭載するために用いられる。   The mounting portion 13 is made of a ceramic material such as alumina ceramic, and is located at a predetermined corner on the substrate portion inside the recess. Further, the mounting portion 13 is formed in, for example, a quadrangular shape in plan view, and has a predetermined thickness. The mounting portion 13 is used for mounting the surface acoustic wave element 30.

緩衝部14bは、例えばシリコン系の材料よりなり、凹部内側の基板部11上に設けられる。例えば前記緩衝部14bは、前記搭載部13の蓋部材側を向く主面の中心を通り前記凹部の基板部11の主面上において1つの長辺と平行となる第1の中心線CL1と、前記凹部の基板部11の主面上において2つの凹部内の長辺の中心を通る第2の中心線CL2と、が交差する位置より前記表面弾性波素子30の自由端側に向かい、前記凹部の基板部11において長辺寸法の8%ずれた位置になっている。   The buffer portion 14b is made of, for example, a silicon-based material, and is provided on the substrate portion 11 inside the recess. For example, the buffer portion 14b passes through the center of the main surface facing the lid member side of the mounting portion 13 and passes through the center of the main surface of the substrate portion 11 of the recess and is parallel to one long side, From the position where the second center line CL2 passing through the center of the long side in the two recesses on the main surface of the substrate portion 11 of the recess crosses toward the free end of the surface acoustic wave element 30, the recess In the substrate portion 11, the position is shifted by 8% of the long side dimension.

表面弾性波素子30は、圧電素子と、前記圧電素子の一方の主面上に形成された電極パターンと、前記電極パターンと同一面上に形成された反射電極パターンとから構成されており、前記圧電素子の他方の主面上に前記電極パターン及び前記反射電極パターンが形成されていない。また、前記表面弾性波素子30は、前記搭載部13上に他方の主面を前記搭載部13側に向けて、導電性接着剤15を介して機械的に片持ち支持されている。また、前記電極パターンは、前記圧電素子の一方の主面上の中央部に櫛型状に形成されている。また、前記反射電極パターンは、前記電極パターンが形成されている同一面上に、前記電極パターンを挟むように両側に位置し格子状に形成されている。このとき、表面弾性波素子30は、前記搭載部13に搭載された場合、前記表面弾性波素子30の一方の主面が前記緩衝部14bと対向するようになっている。   The surface acoustic wave element 30 includes a piezoelectric element, an electrode pattern formed on one main surface of the piezoelectric element, and a reflective electrode pattern formed on the same plane as the electrode pattern. The electrode pattern and the reflective electrode pattern are not formed on the other main surface of the piezoelectric element. The surface acoustic wave element 30 is mechanically cantilevered on the mounting portion 13 with the other main surface facing the mounting portion 13 via a conductive adhesive 15. The electrode pattern is formed in a comb shape at the center on one main surface of the piezoelectric element. In addition, the reflective electrode pattern is formed in a lattice shape on both sides so as to sandwich the electrode pattern on the same surface on which the electrode pattern is formed. At this time, when the surface acoustic wave element 30 is mounted on the mounting portion 13, one main surface of the surface acoustic wave element 30 is opposed to the buffer portion 14b.

集積回路素子20は、凹部内側の基板部上に前記表面弾性波素子30と相対する位置に設けられている。また、集積回路素子20は、前記表面弾性波素子30とワイヤーボンディングにより電気的に接続され、(図示せず)前記基板部11の一方の主面に形成された集積回路素子搭載パッドと電気的に接続されている。(図示せず)また、集積回路素子20は、前記表面弾性波素子30の振動に基づいて発信出力を制御している。また、この集積回路素子20は、凹部内側の基板部11上であって、前記表面弾性波素子30と前記搭載部13と、ともに前記基板部11に設けられている。   The integrated circuit element 20 is provided at a position facing the surface acoustic wave element 30 on the substrate portion inside the recess. The integrated circuit element 20 is electrically connected to the surface acoustic wave element 30 by wire bonding, and is electrically connected to an integrated circuit element mounting pad formed on one main surface of the substrate portion 11 (not shown). It is connected to the. The integrated circuit element 20 controls the transmission output based on the vibration of the surface acoustic wave element 30 (not shown). Further, the integrated circuit element 20 is provided on the substrate portion 11 on the substrate portion 11 inside the recess, and both the surface acoustic wave element 30 and the mounting portion 13 are provided on the substrate portion 11.

蓋部材40は、例えば金属材料よりなり、四角形の金属から形成されている。また、蓋部材40は、前記素子搭載部材10と前記素子搭載部材10の枠部12に設けられた接合用の金属層16を介してシーム溶接で接合される。   The lid member 40 is made of, for example, a metal material and is formed of a square metal. The lid member 40 is joined by seam welding through the element mounting member 10 and the joining metal layer 16 provided on the frame portion 12 of the element mounting member 10.

シーム溶接は、溶接部に大電流を流し溶接部を加熱させ圧力を加えながら行う溶接方法である。   Seam welding is a welding method in which a large current is passed through a welded portion to heat the welded portion and apply pressure.

図3及び図4に示すように、前記素子搭載部材10と前記蓋部材40とを前記素子搭載部材10の枠部12に設けられた接合用の金属層16を介してシーム溶接することにより、前記蓋部材40が加熱され前記蓋部材40と前記素子搭載部材10の枠部12に設けられた接合用の金属層16が溶融し接合される。このとき加熱され溶融した金属部分の熱が冷める事により金属の収縮が起こり、前記素子搭載部材10の長手方向に反りが発生する。この反りは、前記素子搭載部材10に設けられた前記緩衝部14bを押し上げるが、前記搭載部13の蓋部材側を向く主面の中心を通り前記凹部の基板部11の主面上において1つの長辺と平行となる第1の中心線CL1と、前記凹部の基板部11の主面上において2つの長辺の中心を通る第2の中心線CL2と、が交差する位置より前記表面弾性波素子30の自由端側に向かい、前記凹部の基板部11の長辺寸法の8%ずれた位置になっているため、前記表面弾性波素子30は、前記緩衝部14bによる応力を受けにくくなる。   As shown in FIGS. 3 and 4, by seam welding the element mounting member 10 and the lid member 40 through a metal layer 16 for bonding provided on the frame portion 12 of the element mounting member 10, The lid member 40 is heated and the joining metal layer 16 provided on the frame portion 12 of the element mounting member 10 is melted and joined. At this time, when the heat of the heated and melted metal portion cools, the metal contracts and warps in the longitudinal direction of the element mounting member 10. This warp pushes up the buffer portion 14b provided in the element mounting member 10, but passes through the center of the main surface facing the lid member side of the mounting portion 13 and is on the main surface of the substrate portion 11 of the recess. The surface acoustic wave from a position where the first center line CL1 parallel to the long side and the second center line CL2 passing through the center of the two long sides on the main surface of the substrate portion 11 of the recess intersect. The surface acoustic wave element 30 is less likely to be stressed by the buffer portion 14b because it faces the free end of the element 30 and is displaced by 8% of the long side dimension of the substrate portion 11 of the recess.

また、図6(b)のグラフは、第2の実施形態でのSAW発振器のシーム溶接前の周波数を基準としシーム溶接後の周波数との差(以下、周波数偏差という)を、縦軸に周波数値、横軸に測定項目で表したグラフである。また、例えばグラフ上の上限周波数変動値(以下、上限値という)は、シーム溶接前の周波数を基準としシーム溶接後の周波数との差がプラス方向に最大となった値である。また、グラフ上の下限周波数変動値(以下、下限値という)は、シーム溶接前の周波数を基準としシーム溶接後の周波数との差が上限値より最小となった値である。このときこの図6(b)に示すように、周波数偏差は、上限値+5.0E×−06から下限値−1.5E×−06であり、図7(b)の従来の緩衝部位置214での周波数偏差である上限値+7.0E×−06から下限値−19.0E×−06と比べると、第2の実施形態位置での上限値と下限値の幅が従来の緩衝部位置での上限値と下限値の幅よりも第2の実施形態位置の方の幅が小さくなる。したがって第2の実施形態は、SAW発振器の生産性及び信頼性を向上させることが可能となる。   In the graph of FIG. 6B, the difference between the frequency after seam welding (hereinafter, referred to as frequency deviation) with the frequency before seam welding of the SAW oscillator in the second embodiment as a reference, and the frequency on the vertical axis. It is a graph with a value and a measurement item on the horizontal axis. Further, for example, the upper limit frequency fluctuation value (hereinafter referred to as the upper limit value) on the graph is a value in which the difference from the frequency after seam welding is maximized in the positive direction with reference to the frequency before seam welding. Further, the lower limit frequency fluctuation value (hereinafter referred to as the lower limit value) on the graph is a value in which the difference from the frequency after seam welding is minimized from the upper limit value based on the frequency before seam welding. At this time, as shown in FIG. 6B, the frequency deviation is from the upper limit value + 5.0E × −06 to the lower limit value −1.5E × −06, and the conventional buffer portion position 214 of FIG. As compared with the upper limit value + 7.0E × −06, which is a frequency deviation at the lower limit value −19.0E × −06, the range of the upper limit value and the lower limit value in the second embodiment position is the same as that in the conventional buffer portion position. The width at the position of the second embodiment is smaller than the width between the upper limit value and the lower limit value. Therefore, the second embodiment can improve the productivity and reliability of the SAW oscillator.

このように本発明の第2の実施形態に係る緩衝部14bの位置においても、第1の実施形態と同等の効果を奏する。   Thus, also in the position of the buffer part 14b which concerns on the 2nd Embodiment of this invention, there exists an effect equivalent to 1st Embodiment.

(第3の実施形態)
図1及び図5に示すように、本発明の第3の実施形態に係るSAW発振器100は、凹部を有し凹部内側に形成される緩衝部14cを備える素子搭載部材10と、前記素子搭載部材10の凹部内側に搭載される表面弾性波素子30と、前記素子搭載部材10の凹部内側に搭載される集積回路素子20と、凹部を塞ぐ蓋部材40とから主に構成されている。
(Third embodiment)
As shown in FIGS. 1 and 5, a SAW oscillator 100 according to a third embodiment of the present invention includes an element mounting member 10 having a recess and a buffer portion 14 c formed inside the recess, and the element mounting member. The surface acoustic wave element 30 mounted inside the concave portion 10, the integrated circuit element 20 mounted inside the concave portion of the element mounting member 10, and the lid member 40 that closes the concave portion.

素子搭載部材10は、平板状の基板部11と、前記基板部11の一方の主面に設けられて凹部を形成する枠部12と、凹部内側の基板部上に設けられる搭載部13と、凹部内側の基板部上に設けられる緩衝部14cと、から形成されている。   The element mounting member 10 includes a flat substrate portion 11, a frame portion 12 provided on one main surface of the substrate portion 11 to form a recess, a mounting portion 13 provided on the substrate portion inside the recess, The buffer part 14c provided on the board | substrate part inside a recessed part is formed.

基板部11は、例えばアルミナセラミックス等のセラミックス材料よりなり、前記基板部11の一方の主面に形成された集積回路素子搭載パッド(図示せず)及び基板内部には所定の配線導体が形成され、他方の主面に外部端子(図示せず)が形成されている。   The substrate portion 11 is made of, for example, a ceramic material such as alumina ceramics. An integrated circuit element mounting pad (not shown) formed on one main surface of the substrate portion 11 and a predetermined wiring conductor are formed inside the substrate. An external terminal (not shown) is formed on the other main surface.

枠部12は、前記基板部11と同様にアルミナセラミックス等のセラミックス材料よりなり、前記基板部11の一方の主面に設けられて凹部を形成している。また、枠部12は、前記基板部側と相対する主面に接合用の金属層16が形成されている。   The frame portion 12 is made of a ceramic material such as alumina ceramics like the substrate portion 11 and is provided on one main surface of the substrate portion 11 to form a recess. Further, the frame portion 12 has a metal layer 16 for bonding formed on the main surface facing the substrate portion side.

搭載部13は、例えばアルミナセラミックス等のセラミックス材料よりなり、凹部内側の基板部上において所定の隅部に位置している。また、搭載部13は、例えば平面視において四角形の形状で形成されており、所定の厚さを有している。この搭載部13は、表面弾性波素子30を搭載するために用いられる。   The mounting portion 13 is made of a ceramic material such as alumina ceramic, and is located at a predetermined corner on the substrate portion inside the recess. Further, the mounting portion 13 is formed in, for example, a quadrangular shape in plan view, and has a predetermined thickness. The mounting portion 13 is used for mounting the surface acoustic wave element 30.

緩衝部14cは、例えばシリコン系の材料よりなり、凹部内側の基板部11上に設けられる。例えば前記緩衝部14cは、前記搭載部13の蓋部材側を向く主面の中心を通り前記凹部の基板部11の主面上において1つの長辺と平行となる第1の中心線CL1と、前記凹部の基板部11の主面上において2つの凹部内の長辺の中心を通る第2の中心線CL2と、が交差する位置より前記表面弾性波素子30の自由端側に向かい、前記凹部の基板部11において長辺寸法の16%ずれた位置になっている。   The buffer portion 14c is made of, for example, a silicon-based material and is provided on the substrate portion 11 inside the recess. For example, the buffer portion 14c passes through the center of the main surface facing the lid member side of the mounting portion 13 and passes through the center of the main surface of the substrate portion 11 of the recess and is parallel to one long side, From the position where the second center line CL2 passing through the center of the long side in the two recesses on the main surface of the substrate portion 11 of the recess crosses toward the free end of the surface acoustic wave element 30, the recess In the substrate portion 11, the position is shifted by 16% of the long side dimension.

表面弾性波素子30は、圧電素子と、前記圧電素子の一方の主面上に形成された電極パターンと、前記電極パターンと同一面上に形成された反射電極パターンとから構成されており、前記圧電素子の他方の主面上に前記電極パターン及び前記反射電極パターンが形成されていない。また、前記表面弾性波素子30は、前記搭載部13上に他方の主面を前記搭載部13側に向けて、導電性接着剤15を介して機械的に片持ち支持されている。また、前記電極パターンは、前記圧電素子の一方の主面上の中央部に櫛型状に形成されている。
また、前記反射電極パターンは、前記電極パターンが形成されている同一面上に、前記電極パターンを挟むように両側に位置し格子状に形成されている。このとき、表面弾性波素子30は、前記搭載部13に搭載された場合、前記表面弾性波素子30の一方の主面が前記緩衝部14cと対向するようになっている。
The surface acoustic wave element 30 includes a piezoelectric element, an electrode pattern formed on one main surface of the piezoelectric element, and a reflective electrode pattern formed on the same plane as the electrode pattern. The electrode pattern and the reflective electrode pattern are not formed on the other main surface of the piezoelectric element. The surface acoustic wave element 30 is mechanically cantilevered on the mounting portion 13 with the other main surface facing the mounting portion 13 via a conductive adhesive 15. The electrode pattern is formed in a comb shape at the center on one main surface of the piezoelectric element.
In addition, the reflective electrode pattern is formed in a lattice shape on both sides so as to sandwich the electrode pattern on the same surface on which the electrode pattern is formed. At this time, when the surface acoustic wave element 30 is mounted on the mounting portion 13, one main surface of the surface acoustic wave element 30 faces the buffer portion 14 c.

集積回路素子20は、凹部内側の基板部上に前記表面弾性波素子30と相対する位置に設けられている。また、集積回路素子20は、前記表面弾性波素子30とワイヤーボンディングにより電気的に接続され、(図示せず)前記基板部11の一方の主面に形成された集積回路素子搭載パッドと電気的に接続されている。(図示せず)また、集積回路素子20は、前記表面弾性波素子30の振動に基づいて発信出力を制御している。また、この集積回路素子20は、凹部内側の基板部11上であって、前記表面弾性波素子30と前記搭載部13と、ともに前記基板部11に設けられている。   The integrated circuit element 20 is provided at a position facing the surface acoustic wave element 30 on the substrate portion inside the recess. The integrated circuit element 20 is electrically connected to the surface acoustic wave element 30 by wire bonding, and is electrically connected to an integrated circuit element mounting pad formed on one main surface of the substrate portion 11 (not shown). It is connected to the. The integrated circuit element 20 controls the transmission output based on the vibration of the surface acoustic wave element 30 (not shown). Further, the integrated circuit element 20 is provided on the substrate portion 11 on the substrate portion 11 inside the recess, and both the surface acoustic wave element 30 and the mounting portion 13 are provided on the substrate portion 11.

蓋部材40は、例えば金属材料よりなり、四角形の金属から形成されている。また、蓋部材40は、前記素子搭載部材10と前記素子搭載部材10の枠部12に設けられた接合用の金属層16を介してシーム溶接で接合される。   The lid member 40 is made of, for example, a metal material and is formed of a square metal. The lid member 40 is joined by seam welding through the element mounting member 10 and the joining metal layer 16 provided on the frame portion 12 of the element mounting member 10.

シーム溶接は、溶接部に大電流を流し溶接部を加熱させ圧力を加えながら行う溶接方法である。   Seam welding is a welding method in which a large current is passed through a welded portion to heat the welded portion and apply pressure.

図3及び図5に示すように、前記素子搭載部材10と前記蓋部材40とを前記素子搭載部材10の枠部12に設けられた接合用の金属層16を介してシーム溶接することにより、前記蓋部材40が加熱され前記蓋部材40と前記素子搭載部材10の枠部12に設けられた接合用の金属層16が溶融し接合される。このとき加熱され溶融した金属部分の熱が冷める事により金属の収縮が起こり、前記素子搭載部材10の長手方向に反りが発生する。この反りは、前記素子搭載部材10に設けられた前記緩衝部14cを押し上げるが、前記搭載部13の蓋部材側を向く主面の中心を通り前記凹部の基板部11の主面上において1つの長辺と平行となる第1の中心線CL1と、前記凹部の基板部11の主面上において2つの長辺の中心を通る第2の中心線CL2と、が交差する位置より前記表面弾性波素子30の自由端側に向かい、前記凹部の基板部11の長辺寸法の16%ずれた位置になっているため、前記表面弾性波素子30は、前記緩衝部14cによる応力を受けにくくなる。なお、前記緩衝部14cが前記凹部の基板部11の長辺寸法の16%をこえて自由端側に位置すると、前記素子搭載部材10の長手方向の反りにより前記緩衝部14cを押し上げ、前記緩衝部14cに接触している前記表面弾性波素子30に応力をあたえる。   As shown in FIG. 3 and FIG. 5, by seam welding the element mounting member 10 and the lid member 40 via a metal layer 16 for bonding provided on the frame portion 12 of the element mounting member 10, The lid member 40 is heated and the joining metal layer 16 provided on the frame portion 12 of the element mounting member 10 is melted and joined. At this time, when the heat of the heated and melted metal portion cools, the metal contracts and warps in the longitudinal direction of the element mounting member 10. This warp pushes up the buffer portion 14c provided on the element mounting member 10, but passes through the center of the main surface facing the lid member side of the mounting portion 13 and is on the main surface of the substrate portion 11 of the recess. The surface acoustic wave from a position where the first center line CL1 parallel to the long side and the second center line CL2 passing through the center of the two long sides on the main surface of the substrate portion 11 of the recess intersect. The surface acoustic wave element 30 is less likely to be stressed by the buffer portion 14c because it faces the free end of the element 30 and is displaced by 16% of the long side dimension of the substrate portion 11 of the recess. When the buffer portion 14c is positioned on the free end side exceeding 16% of the long side dimension of the substrate portion 11 of the recess, the buffer portion 14c is pushed up by the warp in the longitudinal direction of the element mounting member 10, and the buffer A stress is applied to the surface acoustic wave element 30 in contact with the portion 14c.

また、図6(c)のグラフは、第3の実施形態でのSAW発振器のシーム溶接前の周波数を基準としシーム溶接後の周波数との差(以下、周波数偏差という)を、縦軸に周波数値、横軸に測定項目で表したグラフである。また、例えばグラフ上の上限周波数変動値(以下、上限値という)は、シーム溶接前の周波数を基準としシーム溶接後の周波数との差がプラス方向に最大となった値である。また、グラフ上の下限周波数変動値(以下、下限値という)は、シーム溶接前の周波数を基準としシーム溶接後の周波数との差が上限値より最小となった値である。このときこの図6(c)に示すように、周波数偏差は、上限値+6.0E×−06から下限値−2.5E×−06であり、図7(b)の従来の緩衝部位置214での周波数偏差である上限値+7.0E×−06から下限値−19.0E×−06と比べると、第3の実施形態位置での上限値と下限値の幅が従来の緩衝部位置での上限値と下限値の幅よりも第3の実施形態位置の方の幅が小さくなる。したがって第3の実施形態は、SAW発振器の生産性及び信頼性を向上させることが可能となる。   Further, the graph of FIG. 6C shows the difference between the frequency after seam welding (hereinafter referred to as frequency deviation) with the frequency before the seam welding of the SAW oscillator in the third embodiment as a reference, and the frequency on the vertical axis. It is a graph with a value and a measurement item on the horizontal axis. Further, for example, the upper limit frequency fluctuation value (hereinafter referred to as the upper limit value) on the graph is a value in which the difference from the frequency after seam welding is maximized in the positive direction with reference to the frequency before seam welding. Further, the lower limit frequency fluctuation value (hereinafter referred to as the lower limit value) on the graph is a value in which the difference from the frequency after seam welding is minimized from the upper limit value based on the frequency before seam welding. At this time, as shown in FIG. 6C, the frequency deviation is from the upper limit value + 6.0E × −06 to the lower limit value −2.5E × −06, and the conventional buffer portion position 214 in FIG. When compared with the upper limit value + 7.0E × −06, which is a frequency deviation at the lower limit value −19.0E × −06, the range of the upper limit value and the lower limit value in the third embodiment position is the same as that in the conventional buffer portion position. The width at the position of the third embodiment is smaller than the width between the upper limit value and the lower limit value. Therefore, the third embodiment can improve the productivity and reliability of the SAW oscillator.

このように本発明の第3の実施形態に係る緩衝部14cの位置においても、第1の実施形態と同等の効果を奏する。   Thus, also in the position of the buffer part 14c which concerns on the 3rd Embodiment of this invention, there exists an effect equivalent to 1st Embodiment.

以上、本発明の実施形態について説明したが、本発明は、前記実施形態には限定されない。例えば本実施形態では、表面弾性波素子の振動に基づいて発信出力を制御する集積回路素子(IC)を搭載しているが、搭載させなくとも良い。また、本発明は、シーム溶接で説明をしたが、例えばガラス封止やレーザー封止などの接合部を加熱し接合させる封止方法でも同様の効果が得られる。   As mentioned above, although embodiment of this invention was described, this invention is not limited to the said embodiment. For example, in this embodiment, an integrated circuit element (IC) that controls the transmission output based on the vibration of the surface acoustic wave element is mounted. Moreover, although this invention demonstrated by seam welding, the same effect is acquired also by the sealing method which heats and joins junction parts, such as glass sealing and laser sealing, for example.

(変形例)
本発明の第1の実施形態から第3の実施形態に係るSAW発振器100は、緩衝部14aが、前記搭載部13の蓋部材側を向く主面の中心を通り前記凹部の基板部11の主面上において1つの長辺と平行となる第1の中心線CL1と、前記凹部の基板部11の主面上において2つの長辺の中心を通る第2の中心線CL2と、が交差する位置から前記表面弾性波素子30の自由端側へ、前記凹部の基板部11の長辺寸法の16%ずれた位置までにあっても、第1の実施形態、第2の実施形態、第3の実施形態と同様の効果が得られる。
すなわち、本発明のSAW発振器100によれば、表面弾性波素子30は、素子搭載部材10と、蓋部材40と、を前記素子搭載部材10の枠部に設けられた接合用の金属層を介してシーム溶接にて封止することにより、前記蓋部材40が加熱され前記蓋部材40と前記素子搭載部材10の枠部に設けられた接合用の金属層が溶融し接合される。このとき加熱され溶融した金属部分の熱が冷める事により金属の収縮が起こり、素子搭載部材10の長手方向に反りが発生する。この反りは、素子搭載部材10に設けられた緩衝部14aを押し上げることとなるが、緩衝部の位置が、前記搭載部13の蓋部材側を向く主面の中心を通り前記凹部の基板部の主面上において1つの長辺と平行となる第1の中心線CL1と、前記凹部の基板部の主面上において2つの長辺の中心を通る第2の中心線CL2と、が交差する位置から前記表面弾性波素子30の自由端側へ、前記凹部の基板部の長辺寸法の16%ずれた位置までに設けられているため、前記緩衝部14aが前記表面弾性波素子を押し上げにくくすることができる。したがって、本発明のSAW発振器は、シーム溶接後の周波数偏差を小さくすることができ、生産性及び信頼性を向上させることが出来る。
(Modification)
In the SAW oscillator 100 according to the first to third embodiments of the present invention, the buffer portion 14a passes through the center of the main surface facing the lid member side of the mounting portion 13, and the main portion of the substrate portion 11 of the concave portion. A position where a first center line CL1 parallel to one long side on the surface and a second center line CL2 passing through the center of the two long sides on the main surface of the substrate portion 11 of the recess intersect. 1 to the free end side of the surface acoustic wave element 30 up to a position shifted by 16% of the long side dimension of the substrate portion 11 of the concave portion. The same effect as the embodiment can be obtained.
That is, according to the SAW oscillator 100 of the present invention, the surface acoustic wave element 30 includes the element mounting member 10 and the lid member 40 via the bonding metal layer provided on the frame portion of the element mounting member 10. By sealing with seam welding, the lid member 40 is heated, and the metal layer for joining provided on the lid member 40 and the frame portion of the element mounting member 10 is melted and joined. At this time, when the heat of the heated and melted metal portion cools, the metal contracts and warps in the longitudinal direction of the element mounting member 10. This warping pushes up the buffer portion 14a provided in the element mounting member 10, but the position of the buffer portion passes through the center of the main surface facing the lid member side of the mounting portion 13 and the substrate portion of the concave portion. A position where a first center line CL1 parallel to one long side on the main surface and a second center line CL2 passing through the center of the two long sides on the main surface of the substrate portion of the recess intersect. To the free end side of the surface acoustic wave element 30 up to a position shifted by 16% of the long side dimension of the substrate portion of the recess, the buffer portion 14a makes it difficult to push up the surface acoustic wave element. be able to. Therefore, the SAW oscillator of the present invention can reduce the frequency deviation after seam welding, and can improve productivity and reliability.

100、200 SAW発振器
10、210 素子搭載部材
11、211 基板部
12、212 枠部
13、213 搭載部
15、215 導電性接着剤
16、216 接合用の金属層
20、220 集積回路素子
30、230 表面弾性波素子
40、240 蓋部材
14a 第1実施例
14b 第2実施例
14c 第3実施例
214 従来の位置
CL1、CL2 中心線
100, 200 SAW oscillator 10, 210 Element mounting member 11, 211 Substrate part 12, 212 Frame part 13, 213 Mounting part 15, 215 Conductive adhesive 16, 216 Metal layer for bonding 20, 220 Integrated circuit element 30, 230 Surface acoustic wave device 40, 240 Lid member 14a First embodiment 14b Second embodiment 14c Third embodiment 214 Conventional position
CL1, CL2 center line

Claims (4)

平板状の基板部と、前記基板部の一方の主面に設けられて、凹部を形成する枠部と、凹部内側の基板部上に設けられる搭載部と、凹部内側の基板部上に設けられる緩衝部と、を備える素子搭載部材と、前記搭載部上に導電性接着剤を介して設けられる四角形の表面弾性波素子と、前記素子搭載部材に搭載される集積回路素子と、前記凹部を塞ぐ蓋部材と、を備え、前記表面弾性波素子が前記凹部内側の基板部上に片持ち支持され、前記緩衝部は、前記搭載部の蓋部材側を向く主面の中心を通り前記凹部の基板部の主面上において1つの長辺と平行となる第1の中心線と、前記凹部の基板部の主面上において2つの長辺の中心を通る第2の中心線と、が交差する位置に設けられることを特徴とするSAW発振器。   A flat substrate portion, a frame portion provided on one main surface of the substrate portion to form a recess, a mounting portion provided on the substrate portion inside the recess, and a substrate portion inside the recess An element mounting member including a buffer portion; a square surface acoustic wave device provided on the mounting portion via a conductive adhesive; an integrated circuit element mounted on the element mounting member; And the surface acoustic wave element is cantilevered on the substrate portion inside the recess, and the buffer portion passes through the center of the main surface facing the lid member side of the mounting portion, and the substrate of the recess A position where a first center line parallel to one long side on the principal surface of the portion intersects with a second center line passing through the center of the two long sides on the principal surface of the substrate portion of the recess. A SAW oscillator provided in the above. 平板状の基板部と、前記基板部の一方の主面に設けられて、凹部を形成する枠部と、凹部内側の基板部上に設けられる搭載部と、凹部内側の基板部上に設けられる緩衝部と、を備える素子搭載部材と、前記搭載部上に導電性接着剤を介して設けられる四角形の表面弾性波素子と、前記素子搭載部材に搭載される集積回路素子と、前記凹部を塞ぐ蓋部材と、を備え、前記表面弾性波素子が前記凹部内側の基板部上に片持ち支持され、前記緩衝部は、前記搭載部の蓋部材側を向く主面の中心を通り前記凹部の基板部の主面上において1つの長辺と平行となる第1の中心線と、前記凹部の基板部の主面上において2つの長辺の中心を通る第2の中心線と、が交差する位置より前記表面弾性波素子の自由端側に向かい、前記凹部の基板部の長辺寸法の8%ずれた位置にあることを特徴とする請求項1に記載のSAW発振器。   A flat substrate portion, a frame portion provided on one main surface of the substrate portion to form a recess, a mounting portion provided on the substrate portion inside the recess, and a substrate portion inside the recess An element mounting member including a buffer portion; a square surface acoustic wave device provided on the mounting portion via a conductive adhesive; an integrated circuit element mounted on the element mounting member; And the surface acoustic wave element is cantilevered on the substrate portion inside the recess, and the buffer portion passes through the center of the main surface facing the lid member side of the mounting portion, and the substrate of the recess A position where a first center line parallel to one long side on the principal surface of the portion intersects with a second center line passing through the center of the two long sides on the principal surface of the substrate portion of the recess. More toward the free end side of the surface acoustic wave element, the longer side dimension of the substrate portion of the recess % Offset SAW oscillator according to claim 1, characterized in that in position. 平板状の基板部と、前記基板部の一方の主面に設けられて、凹部を形成する枠部と、凹部内側の基板部上に設けられる搭載部と、凹部内側の基板部上に設けられる緩衝部と、を備える素子搭載部材と、前記搭載部上に導電性接着剤を介して設けられる四角形の表面弾性波素子と、前記素子搭載部材に搭載される集積回路素子と、前記凹部を塞ぐ蓋部材と、を備え、前記表面弾性波素子が前記凹部内側の基板部上に片持ち支持され、前記緩衝部は、前記搭載部の蓋部材側を向く主面の中心を通り前記凹部の基板部の主面上において1つの長辺と平行となる第1の中心線と、前記凹部の基板部の主面上において2つの長辺の中心を通る第2の中心線と、が交差する位置より前記表面弾性波素子の自由端側に向かい、前記凹部の基板部の長辺寸法の16%ずれた位置にあることを特徴とする請求項1に記載のSAW発振器。   A flat substrate portion, a frame portion provided on one main surface of the substrate portion to form a recess, a mounting portion provided on the substrate portion inside the recess, and a substrate portion inside the recess An element mounting member including a buffer portion; a square surface acoustic wave device provided on the mounting portion via a conductive adhesive; an integrated circuit element mounted on the element mounting member; And the surface acoustic wave element is cantilevered on the substrate portion inside the recess, and the buffer portion passes through the center of the main surface facing the lid member side of the mounting portion, and the substrate of the recess A position where a first center line parallel to one long side on the principal surface of the portion intersects with a second center line passing through the center of the two long sides on the principal surface of the substrate portion of the recess. More toward the free end side of the surface acoustic wave element, the longer side dimension of the substrate portion of the recess SAW oscillator according to claim 1, characterized in that 6% offset position. 平板状の基板部と、前記基板部の一方の主面に設けられて、凹部を形成する枠部と、凹部内側の基板部上に設けられる搭載部と、凹部内側の基板部上に設けられる緩衝部と、を備える素子搭載部材と、前記搭載部上に導電性接着剤を介して設けられる四角形の表面弾性波素子と、前記素子搭載部材に搭載される集積回路素子と、前記凹部を塞ぐ蓋部材と、を備え、前記表面弾性波素子が前記凹部内側の基板部上に片持ち支持され、前記緩衝部は、前記搭載部の蓋部材側を向く主面の中心を通り前記凹部の基板部の主面上において1つの長辺と平行となる第1の中心線と、前記凹部の基板部の主面上において2つの長辺の中心を通る第2の中心線と、が交差する位置から前記表面弾性波素子の自由端側へ、前記凹部の基板部の長辺寸法の16%ずれた位置までにあることを特徴とする請求項1に記載のSAW発振器。   A flat substrate portion, a frame portion provided on one main surface of the substrate portion to form a recess, a mounting portion provided on the substrate portion inside the recess, and a substrate portion inside the recess An element mounting member including a buffer portion; a square surface acoustic wave device provided on the mounting portion via a conductive adhesive; an integrated circuit element mounted on the element mounting member; And the surface acoustic wave element is cantilevered on the substrate portion inside the recess, and the buffer portion passes through the center of the main surface facing the lid member side of the mounting portion, and the substrate of the recess A position where a first center line parallel to one long side on the principal surface of the portion intersects with a second center line passing through the center of the two long sides on the principal surface of the substrate portion of the recess. 16% of the long side dimension of the substrate portion of the recess from the free end side of the surface acoustic wave element to SAW oscillator according to claim 1, characterized in that in the up position.
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