JP2012160559A - Method for manufacturing wiring board - Google Patents

Method for manufacturing wiring board Download PDF

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JP2012160559A
JP2012160559A JP2011018875A JP2011018875A JP2012160559A JP 2012160559 A JP2012160559 A JP 2012160559A JP 2011018875 A JP2011018875 A JP 2011018875A JP 2011018875 A JP2011018875 A JP 2011018875A JP 2012160559 A JP2012160559 A JP 2012160559A
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hole
metal layer
copper foil
insulating layer
plated metal
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Koichi Osumi
孝一 大隅
Kazunori Hayashi
和徳 林
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Kyocera SLC Technologies Corp
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Kyocera SLC Technologies Corp
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PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin, high density wiring board having a wiring conductor width of 30 μm and a wiring conductor interval of less than 40 μm.SOLUTION: An insulating layer 1 with copper foil 7 is prepared. A through hole 3 is formed through the insulating layer 1. A first plating metal layer 4 is selectively deposited in the through hole 3, vicinities thereof and positions to form wiring conductors 9 to a thickness incompletely filling the through hole 3. Second plating metal layers 5 for forming a through conductor 6 and lands 8 are deposited in the through hole 3 and on the vicinal first plating metal layer 4 to a thickness completely filling the through hole 3. The copper foil 7 exposed from the first plating metal layer 4 is removed to leave, in the through hole 3, the through conductor 6 comprising the first and second plating metal layers 4, 5 and, on both surfaces of the insulating layer 1, the lands 8 comprising the copper foil 7 and first and second plating metal layers 4, 5 and the wiring conductors 9 comprising the copper foil 7 and the first plating metal layer 4.

Description

本発明は、配線基板の製造方法に関するものである。   The present invention relates to a method for manufacturing a wiring board.

従来、薄型の配線基板として、例えば厚みが40〜300μm程度の薄い絶縁層に直径が30〜100μm程度のテーパ状の複数の貫通孔を設け、これらの貫通孔内をめっき金属層で充填して貫通導体を形成するとともに絶縁層の上下面に貫通導体と同じめっき金属層から成る配線導体を形成した配線基板が知られている。このような配線基板は、例えば厚みが40〜300μm程度の絶縁層にレーザ加工により直径が30〜100μm程度のテーパ状の貫通孔を複数形成するとともに、無電解めっき法により貫通孔内壁および絶縁層の上下面に0.1〜1μm程度の薄い無電解めっき層を被着させた後、この無電解めっき層上に電解めっき法により貫通孔内が完全に充填されるまでめっき金属層を析出させ、最後に絶縁層上のめっき金属層を配線導体に対応するパターンに選択的にエッチングする方法が好適に用いられる。   Conventionally, as a thin wiring substrate, for example, a plurality of tapered through holes having a diameter of about 30 to 100 μm are provided in a thin insulating layer having a thickness of about 40 to 300 μm, and the inside of these through holes is filled with a plated metal layer. There is known a wiring board in which a through conductor is formed and a wiring conductor made of the same plated metal layer as the through conductor is formed on the upper and lower surfaces of an insulating layer. In such a wiring board, for example, a plurality of tapered through holes having a diameter of about 30 to 100 μm are formed by laser processing in an insulating layer having a thickness of about 40 to 300 μm, and the inner walls of the through holes and the insulating layer are formed by electroless plating. After depositing a thin electroless plating layer of about 0.1 to 1 μm on the upper and lower surfaces, a plating metal layer is deposited on the electroless plating layer until the inside of the through hole is completely filled by electrolytic plating. Finally, a method of selectively etching the plated metal layer on the insulating layer into a pattern corresponding to the wiring conductor is preferably used.

しかしながら、このような方法では貫通孔内を十分に充填するだけのめっき金属層を形成しようとすると、絶縁層の上下面にも例えば厚みが40μm程度の厚いめっき金属層が形成されてしまう。このように絶縁層の上下面に形成されるめっき金属層の厚みが40μm程度と厚いと、このめっき金属層を所定のパターンに選択的にエッチングすることにより形成される配線導体の幅は50μm程度、配線導体同士の間隔においては60μm程度が限界となり、それ以上に細い幅および狭い間隔の配線導体を形成することは困難である。したがって、このような従来の製造方法においては、例えば配線導体の幅が30μm以下、および配線導体同士の間隔が40μm未満の高密度配線を有する薄型の配線基板を得ることはできなかった。   However, in such a method, if an attempt is made to form a plated metal layer sufficient to fill the through hole sufficiently, a thick plated metal layer having a thickness of about 40 μm, for example, is also formed on the upper and lower surfaces of the insulating layer. When the thickness of the plated metal layer formed on the upper and lower surfaces of the insulating layer is as thick as about 40 μm, the width of the wiring conductor formed by selectively etching the plated metal layer into a predetermined pattern is about 50 μm. The distance between the wiring conductors is limited to about 60 μm, and it is difficult to form wiring conductors with a narrower width and narrower spacing than that. Therefore, in such a conventional manufacturing method, it has not been possible to obtain a thin wiring substrate having a high-density wiring in which, for example, the width of the wiring conductor is 30 μm or less and the distance between the wiring conductors is less than 40 μm.

特開2002−43752号公報JP 2002-43752 A

本発明は、両面に銅箔が張着された薄い絶縁層に設けられた貫通孔内を、めっき導体で充填するとともに、絶縁層の上下面に銅箔とめっき金属層とから成る配線導体を備えた配線基板において、例えば配線導体の幅が30μm以下、および配線導体同士の間隔が40μm未満の高密度配線を有する薄型の配線基板の製造方法を提供することを課題とするものである。   The present invention fills the inside of a through hole provided in a thin insulating layer with copper foil stuck on both sides with a plated conductor, and has a wiring conductor composed of a copper foil and a plated metal layer on the upper and lower surfaces of the insulating layer. An object of the present invention is to provide a method for manufacturing a thin wiring board having high-density wirings, for example, having a wiring conductor width of 30 μm or less and a spacing between the wiring conductors of less than 40 μm.

本発明の製造方法は、絶縁層の両面に銅箔が張着された銅箔付き絶縁層を準備する工程と、銅箔付き絶縁層に貫通孔を形成する工程と、貫通孔内を充填する貫通導体および貫通導体に接続するランドならびに絶縁層上を延在する配線導体を形成するための第一のめっき金属層を、貫通孔内およびその周囲ならびに配線導体の形成位置に貫通孔を完全に充填しない厚みに選択的に被着させる工程と、貫通孔内およびその周囲の第一のめっき金属層上に貫通導体およびランドを形成するための第二のめっき金属層を貫通孔を完全に充填する厚みに選択的に被着させる工程と、第一のめっき金属層から露出する銅箔をエッチング除去して貫通孔内に第一および第二のめっき金属層から成る貫通導体と、絶縁層の両面に銅箔および第一および第二のめっき金属層から成るランドと、銅箔および第一のめっき金属層から成る配線導体とを残す工程とを行なうことを特徴とする。   The manufacturing method of the present invention includes a step of preparing an insulating layer with copper foil in which copper foil is stuck on both surfaces of the insulating layer, a step of forming a through hole in the insulating layer with copper foil, and a filling of the through hole. The first plated metal layer for forming the through conductor and the land connected to the through conductor and the wiring conductor extending over the insulating layer is completely formed in and around the through hole and at the position where the wiring conductor is formed. Fully fill the through hole with a second plating metal layer to form through conductors and lands on the first plated metal layer in and around the through hole, and selectively depositing the unfilled thickness A step of selectively depositing the copper foil exposed from the first plated metal layer by etching and removing the copper foil exposed from the first plated metal layer in the through hole; and a through conductor comprising the first and second plated metal layers; Copper foil on both sides and first and second And performing a land made of come metal layer, and a step of leaving a wiring conductor made of copper foil and the first plated metal layer.

本発明の配線基板の製造方法によれば、貫通孔を有する絶縁層の貫通孔内およびその周囲ならびに配線導体の形成位置に、貫通孔を完全に充填しない厚みに選択的に第一のめっき金属層を形成した後、貫通孔内およびその周囲のみの第一のめっき金属層上に第2のめっき金属層を形成して貫通孔内を充填することから、絶縁層の上下面での配線導体の厚みを銅箔および第一のめっき金属層から成る例えば20μm以下の薄いものとすることができ、配線導体の幅が30μm以下、および配線導体同士の間隔が40μm未満の微細な配線導体を高密度で形成することができ、それにより高密度配線で薄型の配線基板が製造可能となる。   According to the method for manufacturing a wiring board of the present invention, the first plated metal is selectively formed in a thickness that does not completely fill the through hole in and around the through hole of the insulating layer having the through hole and the position where the wiring conductor is formed. After the layer is formed, the second plated metal layer is formed on the first plated metal layer only in and around the through hole to fill the through hole, so that the wiring conductors on the upper and lower surfaces of the insulating layer The thickness of the copper foil and the first plated metal layer can be made as thin as, for example, 20 μm or less, the width of the wiring conductor is 30 μm or less, and a fine wiring conductor with a spacing between the wiring conductors of less than 40 μm is high. Therefore, a thin wiring board can be manufactured with high-density wiring.

図1は、本発明の製造方法により製造される配線基板の例を示す概略断面図である。FIG. 1 is a schematic cross-sectional view showing an example of a wiring board manufactured by the manufacturing method of the present invention. 図2(a)〜(h)は、本発明の配線基板の製造方法における実施形態の一例を説明するための工程毎の要部概略断面図である。FIGS. 2A to 2H are schematic cross-sectional views of main parts for each process for explaining an example of an embodiment in the method for manufacturing a wiring board of the present invention.

まず、本発明の製造方法により製造される配線基板の例を図1を基に説明する。図1に示すように、本発明の製造方法により製造される配線基板20は、例えばコア用の絶縁層1の上下面にビルドアップ用の絶縁層2が積層されている。コア用の絶縁層1には、複数の貫通孔3が形成されており、この貫通孔3の内部には第一のめっき金属層4および第二のめっき金属層5から成る貫通導体6が充填されている。また絶縁層1の上下面には、銅箔7を下地とした第一のめっき金属層4と第二のめっき金属層5とから成るランド8、および銅箔7を下地とした第一のめっき金属層4から成るコア用の配線導体9が被着されている。   First, an example of a wiring board manufactured by the manufacturing method of the present invention will be described with reference to FIG. As shown in FIG. 1, a wiring board 20 manufactured by the manufacturing method of the present invention has a build-up insulating layer 2 laminated on the upper and lower surfaces of a core insulating layer 1, for example. A plurality of through holes 3 are formed in the insulating layer 1 for the core, and the through conductors 6 including the first plated metal layer 4 and the second plated metal layer 5 are filled in the through holes 3. Has been. Further, on the upper and lower surfaces of the insulating layer 1, the land 8 composed of the first plating metal layer 4 and the second plating metal layer 5 with the copper foil 7 as a base, and the first plating with the copper foil 7 as a base. A core wiring conductor 9 made of a metal layer 4 is attached.

絶縁層2には、ランド8や配線導体9を底面とする複数のビアホール10が形成されており、ビアホール10の内部および絶縁層2の表面には第三のめっき金属層11から成るビルドアップ用の配線導体12が被着されている。それによりコア用のランド8および配線導体9とビルドアップ用の配線導体12とが電気的に接続されている。さらに、絶縁層2および配線導体12の表面には配線導体12の一部を電子部品や回路基板との接続に用いられる接続パッドとして露出させる開口部13aを有するソルダーレジスト層13が被着されている。 A plurality of via holes 10 having lands 8 and wiring conductors 9 as bottom surfaces are formed in the insulating layer 2, and a buildup made of a third plated metal layer 11 is formed inside the via hole 10 and on the surface of the insulating layer 2. The wiring conductor 12 is attached. Thus, the core land 8 and the wiring conductor 9 are electrically connected to the build-up wiring conductor 12. Furthermore, a solder resist layer 13 having an opening 13a that exposes a part of the wiring conductor 12 as a connection pad used for connection to an electronic component or a circuit board is deposited on the surfaces of the insulating layer 2 and the wiring conductor 12. Yes.

次に、図2(a)〜(h)を基に本発明の製造方法における実施形態の一例を説明する。なお、図2において図1と同様の箇所には同様の符号を付して説明する。まず、図2(a)に示すように、上面および下面に銅箔7が張着された絶縁層1を準備する。絶縁層1は、例えばガラスクロスにエポキシ樹脂やビスマレイミドトリアジン樹脂等の熱硬化性樹脂を含浸させた電気絶縁材料から成る。絶縁層1の厚みは40〜300μm程度である。このような絶縁層1は、ガラスクロスにエポキシ樹脂やビスマレイミドトリアジン樹脂等の熱硬化性樹脂を含浸させて半硬化させたプリプレグの両面に厚みが3〜5μm程度の銅箔7を張りつけたものを熱硬化させることにより得られる。   Next, an example of an embodiment in the production method of the present invention will be described with reference to FIGS. In FIG. 2, the same parts as those in FIG. First, as shown in FIG. 2A, an insulating layer 1 is prepared in which a copper foil 7 is stuck on the upper and lower surfaces. The insulating layer 1 is made of, for example, an electrically insulating material in which a glass cloth is impregnated with a thermosetting resin such as an epoxy resin or a bismaleimide triazine resin. The thickness of the insulating layer 1 is about 40 to 300 μm. Such an insulating layer 1 is obtained by attaching a copper foil 7 having a thickness of about 3 to 5 μm to both surfaces of a prepreg obtained by impregnating a glass cloth with a thermosetting resin such as an epoxy resin or a bismaleimide triazine resin. Is obtained by thermosetting.

次に、図2(b)に示すように、銅箔7が張着された絶縁層1に貫通孔3を形成する。貫通孔3は、例えばレーザ加工により形成される。レーザ加工では、貫通孔3におけるレーザの入射側の開口径が出射側の開口径よりも大きくなる。貫通孔3の開口径は、レーザの入射側で80〜100μm程度、出射側で30〜80μm程度である。したがって、貫通孔3はテーパ形状となる。貫通孔3がこのようにテーパ形状であると、貫通孔3の内部をめっき金属層で良好に充填することが容易となる。なお、貫通孔3を形成した後には、デスミア処理をすることが好ましい。その後、貫通孔3内壁および銅箔7の表面に厚みが0.1〜1μm程度の薄い無電解めっき層(不図示)を被着させる。無電解めっき層は、後述する第一のめっき金属層4の下地金属として機能し、例えば、無電解銅めっき層が好適に用いられる。   Next, as shown in FIG.2 (b), the through-hole 3 is formed in the insulating layer 1 to which the copper foil 7 was stuck. The through hole 3 is formed by, for example, laser processing. In laser processing, the opening diameter on the incident side of the laser in the through hole 3 is larger than the opening diameter on the emission side. The opening diameter of the through hole 3 is about 80 to 100 μm on the laser incident side and about 30 to 80 μm on the emission side. Therefore, the through hole 3 is tapered. When the through hole 3 has such a tapered shape, it becomes easy to satisfactorily fill the inside of the through hole 3 with the plated metal layer. In addition, after forming the through-hole 3, it is preferable to perform a desmear process. Thereafter, a thin electroless plating layer (not shown) having a thickness of about 0.1 to 1 μm is deposited on the inner wall of the through hole 3 and the surface of the copper foil 7. The electroless plating layer functions as a base metal for the first plating metal layer 4 to be described later. For example, an electroless copper plating layer is preferably used.

次に、図2(c)に示すように、貫通孔3内およびその周囲ならびに配線導体9を形成する位置を露出させる開口部を有する第一のめっきレジスト14を銅箔7の上下面に形成する。   Next, as shown in FIG. 2 (c), first plating resists 14 having openings for exposing the positions inside and around the through holes 3 and the positions where the wiring conductors 9 are formed are formed on the upper and lower surfaces of the copper foil 7. To do.

次に、図2(d)に示すように、第一のめっきレジスト14から露出する貫通孔3内およびその周囲ならびに配線導体9を形成する位置の銅箔7表面に電解めっき法により第一のめっき金属層4を、貫通孔3内を完全に充填しない厚みに析出させる。このとき、配線導体9を形成する位置には第一のめっき金属層4が銅箔の厚みと合わせて、例えば20μm程度の厚みに形成される。なお、第一のめっき金属層4としては、電解銅めっき層が好適に用いられる。この場合、第一のめっき金属層4は、貫通孔3を完全に充填しない厚みに析出させるので、配線導体9を形成する位置に被着される第一のめっき金属層4の厚みを銅箔の厚みと合わせて例えば20μm程度の十分に薄いものとすることができる。   Next, as shown in FIG. 2 (d), a first electroplating method is applied to the surface of the copper foil 7 in and around the through hole 3 exposed from the first plating resist 14 and the position where the wiring conductor 9 is to be formed. The plated metal layer 4 is deposited to a thickness that does not completely fill the through hole 3. At this time, the first plated metal layer 4 is formed at a position where the wiring conductor 9 is formed, for example, with a thickness of about 20 μm, together with the thickness of the copper foil. In addition, as the 1st metal plating layer 4, an electrolytic copper plating layer is used suitably. In this case, since the first plated metal layer 4 is deposited to a thickness that does not completely fill the through-hole 3, the thickness of the first plated metal layer 4 deposited at the position where the wiring conductor 9 is formed is set to a copper foil. For example, it can be made sufficiently thin, for example, about 20 μm.

次に、図2(e)に示すように、貫通孔3内およびその周囲のみの第一のめっき金属層4を露出させるように第一のめっきレジスト14および配線導体9となる第一のめっき金属層4上に第二のめっきレジスト15を被覆する。   Next, as shown in FIG. 2 (e), the first plating resist 14 and the wiring conductor 9 are exposed so as to expose the first plating metal layer 4 only in and around the through hole 3. A second plating resist 15 is coated on the metal layer 4.

次に、図2(f)に示すように、第二のめっきレジスト15から露出した第一のめっき金属層4上に、電解めっき法により第二のめっき金属層5を貫通孔3内を完全に充填するように被着させる。このとき、貫通孔3内には第一のめっき金属層4及び第二のめっき金属層5から成る貫通導体6が形成されるとともに、貫通導体6の上およびその周辺には銅箔7および第1のめっき導体層4および第二のめっき導体層5から成るランド8用の金属層が形成される。また、配線導体9を形成する位置の第一のめっき金属層4は、第二のめっきレジスト15により被覆されているので第二のめっき金属層5は被着されずに薄いままで残る。なお、第二のめっき金属層5としては、電解銅めっき層が好適に用いられる。第二のめっき金属層5の厚みは、貫通孔3内を十分に充填するために必要な範囲であればよいが、銅箔7と第一のめっき金属層4とを合わせた厚みが25〜35μm程度であることが好ましい。   Next, as shown in FIG. 2 (f), the second plated metal layer 5 is completely deposited in the through hole 3 by electrolytic plating on the first plated metal layer 4 exposed from the second plating resist 15. Adhere to fill. At this time, a through conductor 6 composed of the first plated metal layer 4 and the second plated metal layer 5 is formed in the through hole 3, and the copper foil 7 and the second metal are formed on and around the through conductor 6. A metal layer for the land 8 composed of one plated conductor layer 4 and the second plated conductor layer 5 is formed. In addition, since the first plated metal layer 4 at the position where the wiring conductor 9 is formed is covered with the second plating resist 15, the second plated metal layer 5 remains thin without being deposited. As the second plating metal layer 5, an electrolytic copper plating layer is preferably used. The thickness of the second plated metal layer 5 may be in a range necessary for sufficiently filling the through hole 3, but the combined thickness of the copper foil 7 and the first plated metal layer 4 is 25 to 25. It is preferably about 35 μm.

次に、図2(g)に示すように、ランド8用の金属層をエッチングにより所定の厚みに削っていく。このとき、ランド8の厚みは20〜30μm程度とすることが好ましい。ランド8が20μm未満の厚みになるまでエッチングを行うと、その上にビルドアップ用の絶縁層2を積層する際にランド8上を被覆する絶縁層2が厚くなり、絶縁層2のビアホール10内にビルドアップ用の配線導体12を形成する際に接続信頼性において低下を招くことになり、逆に30μmを超える厚みが残る程度のエッチングを行うと、ランド8とその周囲との段差が大きくなるため絶縁層2の厚みが薄くなり絶縁信頼性が低下する危険がある。   Next, as shown in FIG. 2G, the metal layer for the land 8 is etched to a predetermined thickness by etching. At this time, the thickness of the land 8 is preferably about 20 to 30 μm. When etching is performed until the land 8 has a thickness of less than 20 μm, the insulating layer 2 covering the land 8 becomes thick when the build-up insulating layer 2 is laminated thereon, and the insulating layer 2 has a thickness in the via hole 10. When the wiring conductor 12 for buildup is formed, the connection reliability is lowered. On the contrary, if etching is performed to the extent that the thickness exceeding 30 μm remains, the step between the land 8 and the periphery thereof becomes large. Therefore, there is a risk that the insulating layer 2 becomes thin and the insulation reliability is lowered.

最後に、図2(h)に示すように、両めっきレジスト14、15を除去するとともに、第一のめっき金属層4から露出する銅箔7をエッチング除去する。これによって、貫通孔3内が第一および第二のめっき金属層4、5で充填されている貫通導体6と、絶縁層1の上下面に銅箔7を下地とした第一および第二のめっき金属層4、5から成るランド8と、銅箔7を下地とした第一のめっき金属層4から成る配線導体9が形成される。その後、周知のビルドアップ技術を用いてビルドアップ用の絶縁層2および配線導体12ならびにソルダーレジスト層13を形成することにより図1に示した配線基板20が完成する。本例の場合、絶縁層1上下面の銅箔7を下地として第一のめっき金属層4で形成された配線導体9は、厚みが20μm以下の薄いものであり、配線導体9の幅が30μm以下、および配線導体9同士の間隔が40μm未満の微細な配線導体9を高密度で形成することができ、それにより高密度配線で薄型の配線基板を製造可能である。さらに、本例の場合、第一のめっき金属層4から成る配線導体9の下地金属として絶縁層1の上下面に被着された銅箔7を用いることから、第一のめっき金属層4から成る配線導体9を絶縁層1の上下面に銅箔7を介して極めて強固に接合させることができる。   Finally, as shown in FIG. 2H, both plating resists 14 and 15 are removed, and the copper foil 7 exposed from the first plating metal layer 4 is removed by etching. As a result, the through conductor 6 in which the inside of the through hole 3 is filled with the first and second plated metal layers 4 and 5, and the first and second first and second surfaces of the insulating layer 1 with the copper foil 7 as the base are provided. A land 8 made of the plated metal layers 4 and 5 and a wiring conductor 9 made of the first plated metal layer 4 with the copper foil 7 as a base are formed. Thereafter, the build-up insulating layer 2, the wiring conductor 12, and the solder resist layer 13 are formed by using a well-known build-up technique, thereby completing the wiring substrate 20 shown in FIG. In the case of this example, the wiring conductor 9 formed of the first plated metal layer 4 with the copper foils 7 on the upper and lower surfaces of the insulating layer 1 as a base is a thin one having a thickness of 20 μm or less, and the width of the wiring conductor 9 is 30 μm. In the following, fine wiring conductors 9 having a spacing of less than 40 μm between the wiring conductors 9 can be formed with high density, whereby a thin wiring board can be manufactured with high-density wiring. Furthermore, in this example, since the copper foil 7 deposited on the upper and lower surfaces of the insulating layer 1 is used as the base metal of the wiring conductor 9 made of the first plated metal layer 4, the first plated metal layer 4 is used. The wiring conductor 9 formed can be bonded to the upper and lower surfaces of the insulating layer 1 very firmly via the copper foil 7.

1 絶縁層
3 貫通孔
4 第一のめっき導体
5 第二のめっき導体
6 貫通導体
7 銅箔
8 ランド
9 配線導体
DESCRIPTION OF SYMBOLS 1 Insulation layer 3 Through-hole 4 1st plating conductor 5 2nd plating conductor 6 Through conductor 7 Copper foil 8 Land 9 Wiring conductor

Claims (1)

絶縁層の両面に銅箔が張着された銅箔付き絶縁層を準備する工程と、前記銅箔付き絶縁層に貫通孔を形成する工程と、前記貫通孔内を充填する貫通導体および該貫通導体に接続するランドならびに前記絶縁層上を延在する配線導体を形成するための第一のめっき金属層を前記貫通孔内およびその周囲ならびに前記配線導体の形成位置に前記貫通孔を完全に充填しない厚みに選択的に被着させる工程と、前記貫通孔内およびその周囲の前記第一のめっき金属層上に前記貫通導体および前記ランドを形成するための第二のめっき金属層を前記貫通孔を完全に充填する厚みに選択的に被着させる工程と、前記第一のめっき金属層から露出する前記銅箔をエッチング除去して前記貫通孔内に前記第一および第二のめっき金属層から成る貫通導体と、前記絶縁層の両面に前記銅箔および前記第一および第二のめっき金属層から成るランドと、前記銅箔および前記第一のめっき金属層から成る配線導体とを残す工程とを行なうことを特徴とする配線基板の製造方法。   A step of preparing an insulating layer with copper foil in which copper foil is stuck on both sides of the insulating layer, a step of forming a through hole in the insulating layer with copper foil, a through conductor filling the through hole, and the through hole The through hole is completely filled in and around the through hole and at the position where the wiring conductor is formed with a land connected to the conductor and a first plated metal layer for forming a wiring conductor extending on the insulating layer A step of selectively depositing to a thickness not to be formed, and a second plated metal layer for forming the through conductor and the land on the first plated metal layer in and around the through hole. And selectively depositing the copper foil exposed from the first plated metal layer by etching to remove the copper foil exposed from the first plated metal layer from the first and second plated metal layers. Through conductors and front Leaving a land made of the copper foil and the first and second plated metal layers and a wiring conductor made of the copper foil and the first plated metal layer on both surfaces of the insulating layer. A method of manufacturing a wiring board.
JP2011018875A 2011-01-31 2011-01-31 Method for manufacturing wiring board Pending JP2012160559A (en)

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WO2019039251A1 (en) * 2017-08-24 2019-02-28 住友電気工業株式会社 Printed wiring board
CN113677105A (en) * 2021-07-09 2021-11-19 皆利士多层线路版(中山)有限公司 Hole plating method for blind hole of circuit board and HDI circuit board containing copper plated blind hole
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WO2022202794A1 (en) * 2021-03-23 2022-09-29 凸版印刷株式会社 Glass substrate and glass-core multilayer wiring board

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WO2019039251A1 (en) * 2017-08-24 2019-02-28 住友電気工業株式会社 Printed wiring board
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CN110999546A (en) * 2017-08-24 2020-04-10 住友电气工业株式会社 Printed circuit board
US10952321B2 (en) 2017-08-24 2021-03-16 Sumitomo Electric Industries, Ltd. Printed circuit board
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WO2022092129A1 (en) * 2020-10-30 2022-05-05 京セラ株式会社 Wiring board, electronic device, and electronic module
WO2022202794A1 (en) * 2021-03-23 2022-09-29 凸版印刷株式会社 Glass substrate and glass-core multilayer wiring board
CN113677105A (en) * 2021-07-09 2021-11-19 皆利士多层线路版(中山)有限公司 Hole plating method for blind hole of circuit board and HDI circuit board containing copper plated blind hole

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