JP2012146740A - Etching device and etching method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an etching device and an etching method capable of shortening processing time.SOLUTION: When a direction inclined to a horizontal plane is defined as a first direction and a direction which is roughly parallel to the horizontal plane and is roughly orthogonal to the first direction is defined as a second direction, the etching device includes: a feed roller for carrying a processing substrate along the second direction in the state of inclining it in the first direction; a swing nozzle arranged along the first direction, for discharging a liquid chemical required for etching toward the processing substrate carried by the feed roller while swinging to the front and back along the second direction; and an intermittent nozzle arranged along the second direction facing one end part positioned at the inclined upper part of the processing substrate carried in an inclined state by the feed roller, for discharging the liquid chemical required for etching toward the processing substrate at the timing that the swing nozzle reaches a front end or a back end.

Description

  Embodiments described herein relate generally to an etching apparatus and an etching method.

  In the process of manufacturing a flat display device typified by a liquid crystal display device, a process of patterning various conductive films and various insulating films by etching is included. As an etching method, there is wet etching in which a chemical solution (etching solution) necessary for etching is used to remove portions other than the resist film coating portion. In such wet etching, in order to form a high-definition pattern in a short time, it is important to supply a fresh chemical solution evenly on the processing substrate to form a uniform liquid film state.

  Various techniques for ejecting various liquid agents such as chemical solutions from a nozzle toward a processing substrate have been proposed.

JP 2000-323813 A JP 2007-117952 A

  An object of the present embodiment is to provide an etching apparatus and an etching method capable of reducing the processing time.

According to this embodiment,
When the direction inclined with respect to the horizontal plane is the first direction, and when the direction substantially parallel to the horizontal plane and substantially orthogonal to the first direction is the second direction, the processing substrate is inclined in the first direction. A feed roller that is transported along the second direction and a processing substrate that is disposed along the first direction and that is transported by the feed roller while swinging forward and backward along the second direction. The oscillating nozzle that discharges the chemical solution necessary for etching toward the one end and the one end located above the processing substrate being conveyed in an inclined state by the feed roller, and disposed along the second direction, There is provided an etching apparatus comprising: an intermittent nozzle that discharges a chemical solution necessary for etching toward a processing substrate at a timing when the swing nozzle reaches a front end or a rear end.

According to this embodiment,
When the direction inclined with respect to the horizontal plane is the first direction, and when the direction substantially parallel to the horizontal plane and substantially orthogonal to the first direction is the second direction, the processing substrate is inclined in the first direction. Etching from the oscillating nozzle that is transported along the second direction and is oscillated forward and backward along the second direction to the processing substrate being transported. The oscillating nozzle is disposed at the front end from an intermittent nozzle disposed along the second direction and facing one end located above the tilt of the processing substrate being discharged in a tilted state. Alternatively, there is provided an etching method characterized in that a chemical solution necessary for etching is discharged toward a processing substrate at a timing when the rear end is reached.

FIG. 1 is a perspective view schematically showing a configuration of an etching apparatus in the present embodiment. FIG. 2 is a diagram for explaining chemical solution discharge areas by the swing nozzle and the intermittent nozzle located above the processing substrate. FIG. 3 is a diagram for explaining the discharge direction of the chemical solution by each of the swing nozzle and the intermittent nozzle located above the processing substrate. FIG. 4 is a view for explaining the chemical solution discharge area and the chemical solution flow by the swing nozzle and the intermittent nozzle, respectively. FIG. 5 is a diagram for explaining the positional relationship between the oscillating nozzle and the intermittent nozzle located above the processing substrate.

  Hereinafter, the present embodiment will be described in detail with reference to the drawings. In each figure, the same reference numerals are given to components that exhibit the same or similar functions, and duplicate descriptions are omitted.

  FIG. 1 is a perspective view schematically showing a configuration of an etching apparatus 1 in the present embodiment.

  That is, the etching apparatus 1 is an apparatus that performs wet etching, and includes an etching chamber 10 and a rinsing chamber 20. The etching chamber 10 is arranged on the upstream side along the transfer direction of the processing substrate SUB. The rinsing chamber 20 is connected to the etching chamber 10 and is disposed downstream of the etching chamber 10 along the transfer direction of the processing substrate SUB.

  In the present embodiment, a direction inclined with respect to the horizontal plane H is defined as a first direction X, and a direction substantially parallel to the horizontal plane H and substantially orthogonal to the first direction X is defined as a second direction Y. . An angle formed by the first direction X with respect to the horizontal plane H (or an angle formed by the inclined plane I defined by the first direction X and the second direction Y and the horizontal plane H) θ is appropriately set. The transport direction of the processing substrate SUB corresponds to the second direction Y.

  The processing substrate SUB processed by the etching apparatus 1 is, for example, a conductive film for wiring formed on an insulating substrate such as a glass substrate, or a resist film formed on the conductive film corresponding to the wiring pattern. Etc. A portion to be removed by etching with the etching apparatus 1 (here, a part of the conductive film) is exposed from the resist film.

  In the etching chamber 10, a feed roller 11, a swing nozzle 12, an intermittent nozzle 13, and the like are arranged.

  The feed roller 11 conveys the processing substrate SUB along the second direction Y in a state where the processing substrate SUB is inclined in the first direction X. Such a feed roller 11 is disposed along the first direction X, and its rotation axis O1 extends along the first direction X. Further, the feed rollers 11 are arranged side by side in the second direction Y with an interval therebetween. That is, the feed roller 11 is disposed so as to form the inclined surface I.

  At least some of these feed rollers 11 are rotated by a drive mechanism (not shown). Thereby, the processing substrate SUB introduced into the etching chamber 10 is transported toward the rinsing chamber 20 on the inclined surface I formed by the feed roller 11. The one end SUBT along the first direction X of the processing substrate SUB transported by the feed roller 11 is positioned above the horizontal plane H, and the other end along the first direction X of the processing substrate SUB. The end portion SUBB is located on the lower side with respect to the horizontal plane H.

  The oscillating nozzle 12 is arranged along the first direction X, and oscillates forward and backward along the second direction Y while etching toward the processing substrate SUB conveyed by the feed roller 11. It discharges the necessary chemicals. The chemical solution discharged from the oscillating nozzle 12 spreads radially and is supplied to the surface of the processing substrate SUB. The distance from each of the swing nozzles 12 to the processing substrate SUB is substantially the same.

  Here, the oscillating nozzle 12 arranged along the first direction X is provided in the first chemical liquid supply pipe PA to which the chemical liquid is supplied. The first chemical liquid supply pipe PA extends in the first direction X and faces the processing substrate SUB substantially in parallel. A plurality of oscillating nozzles 12 are arranged in a straight line along the first direction X at intervals with respect to the first chemical liquid supply pipe PA.

  Further, the oscillating nozzles 12 are arranged side by side in the second direction Y at intervals. In the example shown here, four first chemical liquid supply pipes PA are illustrated, and each of them is arranged in the second direction Y at an interval. A plurality of oscillating nozzles 12 are arranged at intervals in each of the first chemical liquid supply pipes PA.

  These oscillating nozzles 12 oscillate in the same direction along the second direction Y, for example. That is, the oscillating nozzles 12 provided in each of the first chemical solution supply pipes PA all move simultaneously toward the front along the second direction Y and then temporarily stop at the front end, and then the second direction Y The movement is repeated in such a manner that it moves backward along the line, stops once at the rear end, and then moves forward again.

  The intermittent nozzle 13 is arranged along the second direction Y while facing the one end SUBT located above the processing substrate SUB being conveyed in an inclined state by the feed roller 11, and the oscillating nozzle 12 is located at the front end. Alternatively, a chemical solution necessary for etching is discharged toward the processing substrate SUB at the timing when the rear end is reached. The chemical solution discharged from the intermittent nozzle 13 spreads radially and is supplied to the surface of the processing substrate SUB. The distance from each of the intermittent nozzles 13 to the processing substrate SUB is substantially the same.

  Here, the intermittent nozzle 13 arranged along the second direction Y is provided in the second chemical liquid supply pipe PB to which the chemical liquid is supplied. The second chemical liquid supply pipe PB extends in the second direction Y and faces the processing substrate SUB substantially in parallel. A plurality of intermittent nozzles 13 are arranged in a straight line along the second direction Y at intervals with respect to the second chemical liquid supply pipe PB.

  Further, the intermittent nozzle 13 is configured to discharge the chemical liquid toward the rocking nozzles 12 arranged side by side in the second direction Y. The chemical solution discharged from the intermittent nozzle 13 is supplied to one end portion SUBT of the processing substrate SUB. The chemical solution supplied to the one end SUBT flows along the first direction X toward the other end SUBB. The flow rate of the chemical solution supplied from the intermittent nozzle 13 is preferably higher than the flow rate formed by the action of gravity.

  Control of each component in the etching chamber 10 is performed by the arithmetic unit 30. A chemical liquid discharge controller 40 that controls the discharge operation of the chemical liquid from the oscillating nozzle 12 and the intermittent nozzle 13 is connected to the arithmetic device 30. Based on the control by the arithmetic unit 30, the chemical liquid discharge controller 40 discharges the chemical liquid from the rocking nozzle 12 while rocking the rocking nozzle 12, and temporarily stops when the rocking nozzle 12 reaches the front end or the rear end. The chemical solution is discharged from the intermittent nozzle 13 at the same timing.

  In the washing chamber 20, a feed roller 21, a washing nozzle 22 and the like are arranged.

  Similarly to the feed roller 11, the feed roller 21 conveys the processing substrate SUB along the second direction Y in a state where the process substrate SUB is inclined in the first direction X. Such a feed roller 21 is arranged along the first direction X, and its rotation axis O2 extends along the first direction X. The feed rollers 21 are arranged side by side in the second direction Y at intervals. At least a part of these feed rollers 21 is rotated by a driving mechanism (not shown) and transports the processing substrate SUB along the second direction Y. Thereby, the processing substrate SUB introduced into the rinsing chamber 20 is transported toward the outside of the etching apparatus 1.

  The water washing nozzle 22 is arranged along the first direction X and discharges a rinsing liquid such as water toward the processing substrate SUB being conveyed by the feed roller 21. The rinse liquid discharged from the water washing nozzle 22 spreads radially and is supplied to the surface of the processing substrate SUB.

  In such an etching apparatus 1, first, the processing substrate SUB is introduced into the etching chamber 10. At this time, the processing substrate SUB is disposed on the feed roller 11 so that the portion to be removed (here, the conductive film exposed from the resist film) faces the oscillating nozzle 12 and the intermittent nozzle 13. With the rotation of the feed roller 11, the processing substrate SUB is conveyed along the second direction Y while being inclined in the first direction X.

  The chemical solution discharge controller 40 causes the chemical solution to be discharged from the swing nozzle 12 swinging forward and backward along the second direction Y with respect to the processing substrate SUB transported inside the etching chamber 10. Then, a chemical solution is supplied to the surface of the processing substrate SUB (that is, the conductive film to be etched).

  On the other hand, the arithmetic device 30 has information regarding the timing at which the swing nozzle 12 reaches the front end or the rear end along the second direction Y. The arithmetic unit 30 outputs a signal for discharging the chemical liquid from the intermittent nozzle 13 to the chemical liquid discharge controller 40 at a timing when the swing nozzle 12 reaches the front end or the rear end and temporarily stops.

  The chemical solution discharge controller 40 keeps the chemical solution from the intermittent nozzle 13 intermittently (that is, at the timing when the oscillating nozzle 12 reaches the front end or the rear end) toward the one end portion SUBT of the processing substrate SUB being conveyed. A time (for example, about 1 second) is discharged, and a chemical is supplied to the surface of the processing substrate SUB. Thereby, the object to be etched is etched by the chemical solution.

  When the etching process in the etching chamber 10 is completed, the processing substrate SUB is transferred to the rinsing chamber 20. In the rinsing chamber 20, the processing substrate SUB is conveyed along the second direction Y in an inclined state as the feed roller 21 rotates. For the processing substrate SUB transported inside the rinsing chamber 20, the rinsing liquid is discharged from the rinsing nozzle 22, and the rinsing liquid is supplied to the surface of the processing substrate SUB. Thereby, the rinse process of the process board | substrate SUB is performed.

  When the rinse process in the rinsing chamber 20 is completed, the process substrate SUB is transferred to the outside of the etching apparatus 1.

  Next, the rocking nozzle 12 and the intermittent nozzle 13 in the etching chamber 10 will be described in more detail.

  FIG. 2 is a view for explaining the chemical liquid discharge areas by the swing nozzle 12 and the intermittent nozzle 13 located above the processing substrate SUB.

  The oscillating nozzle 12 indicated by a solid line in the figure corresponds to the state of reaching the rear end along the second direction Y, and the oscillating nozzle 12 indicated by the dotted line in the figure is the front end along the second direction Y. Corresponds to the state reached. The oscillating nozzle 12 ejects the chemical solution radially toward the processing substrate SUB while oscillating between the illustrated front end and rear end.

  The chemical solution supplied from the oscillating nozzle 12 to the surface of the processing substrate SUB spreads as shown by an ellipse in the drawing. Note that an ellipse A1 indicated by a solid line in the figure indicates an area that spreads on the surface of the processing substrate SUB of the chemical solution discharged when the oscillating nozzle 12 reaches the rear end, and an ellipse A2 indicated by a dotted line in the figure. Indicates an area that spreads on the surface of the processing substrate SUB of the chemical solution discharged when the oscillating nozzle 12 reaches the front end (the same applies to the drawings to be referred to hereinafter). Of course, the oscillating nozzle 12 continuously discharges the chemical liquid while the oscillating nozzle 12 moves between the front end and the rear end.

  Although not shown in the drawing, the chemicals discharged when each of the oscillating nozzles 12 adjacent in the second direction Y reaches the front end or the rear end are at least partially partially spread when spread on the surface of the processing substrate SUB. It is desirable to overlap (that is, at least part of the ellipse A1 indicated by the solid line and the ellipse A2 indicated by the dotted line overlap).

  The intermittent nozzle 13 discharges the chemical solution along the first direction X toward the chemical solution spread on the surface of the processing substrate SUB when the swing nozzle 12 reaches the front end or the rear end. At this time, the intermittent nozzle 13 discharges the chemical toward the one end portion SUBT of the processing substrate SUB. In the illustrated example, the intermittent nozzle 13 discharges the chemical solution toward the area of the ellipse A2 indicated by the dotted line in the drawing (more preferably, near the front end of the ellipse A2).

  FIG. 3 is a view for explaining the discharge direction of the chemical solution by each of the oscillating nozzle 12 and the intermittent nozzle 13 located above the processing substrate SUB.

  Each of the oscillating nozzles 12 provided in the first chemical solution supply pipe PA discharges the chemical solution radially from the normal direction of the processing substrate SUB. The chemical solution spread on the surface of the processing substrate SUB flows from one end SUBT of the processing substrate SUB toward the other end SUBB.

  The intermittent nozzle 13 provided in the second chemical liquid supply pipe PB is located above the one end portion SUBT of the processing substrate SUB. The intermittent nozzle 13 discharges the chemical solution from an oblique direction with respect to the normal line of the processing substrate SUB. The chemical solution that has reached the surface of the processing substrate SUB flows from one end SUBT of the processing substrate SUB toward the other end SUBB.

  FIG. 4 is a diagram for explaining a chemical solution discharge area and a chemical solution flow by the swing nozzle 12 and the intermittent nozzle 13, respectively.

  The chemical solution supplied onto the processing substrate SUB from a rocking nozzle (not shown) is subjected to the action of gravity, as indicated by the solid line ellipse A1 or the dotted line ellipse A2, in the drawing, at one end SUBT of the processing substrate SUB. Flows toward the other end SUBB.

  On the other hand, the chemical solution supplied from the intermittent nozzle (not shown) onto the processing substrate SUB flows from the one end SUBT of the processing substrate SUB toward the other end SUBB as shown by the arrow B in the figure. In particular, the chemical solution discharged from the intermittent nozzle is supplied toward an area where the ellipses A1 and A2 adjacent in the second direction Y overlap.

  According to the present embodiment as described above, the chemical liquid supplied onto the processing substrate SUB while the oscillating nozzle 12 is oscillating is the flow of the chemical liquid supplied from the intermittent nozzle 13 in addition to the action of gravity. Acts to accelerate the flow of the chemical toward the other end SUBB. That is, the chemical solution is supplied from two different directions on the processing substrate SUB, and the replacement of the chemical solution can be promoted.

  For this reason, even if a part of the chemical supplied from the rocking nozzle 12 onto the processing substrate SUB is likely to stay temporarily, the flow of the chemical supplied from the intermittent nozzle 13 acts and the chemical is forced. In other words, it flows toward the other end SUBB. In this way, it is possible to optimize the flow of the chemical solution and suppress the retention of the chemical solution, and it is possible to continuously replace the fresh chemical solution on the processing substrate SUB.

  As a result, the chemical substitution rate can be optimized over the entire surface of the processing substrate SUB, and the etching process with a high-definition pattern can be completed without any residue. Therefore, it is not necessary to secure extra time by over-etching or the like, and it is possible to reduce the amount of chemical used.

  FIG. 5 is a diagram for explaining the positional relationship between the oscillating nozzle 12 and the intermittent nozzle 13 located above the processing substrate SUB.

  In the illustrated example, six first chemical liquid supply pipes PA1 to PA6 each extending along the first direction X are arranged side by side along the second direction Y at intervals. The intervals between the first chemical liquid supply pipes PA1 to PA6 are substantially the same. Each of the first chemical liquid supply pipes PA1 to PA6 is provided with a plurality of oscillating nozzles 12 arranged in the first direction X.

  In the example shown here, the oscillating nozzles 12 are staggered above the processing substrate SUB. That is, each of the oscillating nozzles 12 provided in every other first chemical liquid supply pipe PA1, PA3, and PA5 is located on the same straight line parallel to the second direction Y. Similarly, the oscillating nozzles 12 provided in every other first chemical solution supply pipe PA2, PA4, and PA6 are located on the same straight line parallel to the second direction Y. In other words, the two adjacent first chemical liquid supply pipes, for example, the oscillating nozzle 12 provided in the first chemical liquid supply pipe PA1 and the oscillating nozzle 12 provided in the first chemical liquid supply pipe PA2 are: It is not located on the same straight line parallel to the two directions Y.

  These oscillating nozzles 12 discharge the chemical liquid to areas as indicated by ellipses A1 and A2 in the drawing. Such an arrangement of the oscillating nozzle 12 makes it possible to supply the chemical solution evenly on the processing substrate SUB without a gap.

  On the other hand, one second chemical solution supply pipe PB extending along the second direction Y is located above one end portion SUBT of the processing substrate SUB. The second chemical solution supply pipe PB is provided with a plurality of intermittent nozzles 13 arranged in the second direction Y. The intermittent nozzles 13 are located on the respective extension lines between the first chemical liquid supply pipes PA1 and PA2, between PA2 and PA3, between PA3 and PA4, between PA4 and PA5, and between PA5 and PA6. positioned.

  Such an intermittent nozzle 13 intermittently supplies a chemical solution onto the processing substrate SUB as indicated by an arrow B in the drawing. At this time, the intermittent nozzle 13 supplies the chemical solution near the front or rear of the ellipses A1 and A2. As a result, the flow of the chemical solution from the one end SUBT to the other end SUBB is accelerated, and the replacement of the chemical on the processing substrate SUB can be promoted.

  As described above, according to this embodiment, it is possible to provide an etching apparatus and an etching method capable of shortening the processing time.

  In addition, although some embodiment of this invention was described, these embodiment is shown as an example and is not intending limiting the range of invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the spirit of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

DESCRIPTION OF SYMBOLS 1 ... Etching apparatus 10 ... Etching chamber 11 ... Feed roller 12 ... Swing nozzle 13 ... Intermittent nozzle 20 ... Washing chamber 21 ... Feeding roller 22 ... Washing nozzle 30 ... Arithmetic device 40 ... Chemical solution discharge controller SUB ... Processing substrate

Claims (7)

When the direction inclined with respect to the horizontal plane is the first direction, and when the direction substantially parallel to the horizontal plane and substantially orthogonal to the first direction is the second direction, the processing substrate is inclined in the first direction. A feed roller transported along the second direction at
An oscillating nozzle that is disposed along the first direction and oscillates forward and backward along the second direction, and discharges a chemical solution necessary for etching toward the processing substrate conveyed by the feed roller. When,
At the timing when the swing nozzle reaches the front end or the rear end, facing one end located above the inclination of the processing substrate being conveyed in an inclined state by the feed roller, and arranged along the second direction. An intermittent nozzle that discharges a chemical necessary for etching toward the processing substrate;
An etching apparatus comprising:   2. The etching apparatus according to claim 1, wherein the oscillating nozzles are arranged side by side in the second direction at intervals, and each oscillates in the same direction along the second direction.   The etching apparatus according to claim 2, wherein the oscillating nozzles are arranged in a staggered manner above the processing substrate.   The etching apparatus according to claim 2, wherein the intermittent nozzle discharges a chemical solution between the oscillating nozzles arranged side by side in the second direction.   5. The etching according to claim 1, wherein the oscillating nozzle arranged along the first direction is provided in a first chemical solution supply pipe extending in the first direction. 6. apparatus.   The etching apparatus according to claim 1, wherein the intermittent nozzle disposed along the second direction is provided in a second chemical solution supply pipe extending in the second direction. . When the direction inclined with respect to the horizontal plane is the first direction, and when the direction substantially parallel to the horizontal plane and substantially orthogonal to the first direction is the second direction, the processing substrate is inclined in the first direction. In the second direction,
A chemical solution necessary for etching is discharged from a swing nozzle arranged along the first direction and swinging forward and backward along the second direction toward the processing substrate being conveyed,
At a timing when the oscillating nozzle reaches the front end or the rear end from the intermittent nozzle disposed along the second direction while facing one end portion of the processing substrate being conveyed in an inclined state. Discharges chemicals necessary for etching toward the processing substrate.
An etching method characterized by the above.

Images