JP2012129524A - 基板ホルダ、リソグラフィ装置、デバイス製造方法、および基板ホルダを製造する方法 - Google Patents
基板ホルダ、リソグラフィ装置、デバイス製造方法、および基板ホルダを製造する方法 Download PDFInfo
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- JP2012129524A JP2012129524A JP2011268667A JP2011268667A JP2012129524A JP 2012129524 A JP2012129524 A JP 2012129524A JP 2011268667 A JP2011268667 A JP 2011268667A JP 2011268667 A JP2011268667 A JP 2011268667A JP 2012129524 A JP2012129524 A JP 2012129524A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70975—Assembly, maintenance, transport or storage of apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
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- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
【解決手段】リソグラフィ装置用の基板ホルダは、その表面上に設けられた平坦化層を有する。この平坦化層は、薄膜の電子的コンポーネントなどの電子的コンポーネントを形成するための滑らかな表面を設ける。この平坦化層は、複数の副層に設けられてもよい。この平坦化層は、基板ホルダ上にバールを形成するように空所から材料を除去することによってもたらされた粗さの上を滑らかにすることができる。
【選択図】図6
Description
Claims (15)
- リソグラフィ装置で使用する基板ホルダであって、
表面を有する本体と、
前記表面から突出し、基板を支持するための終端面を有する複数のバールと、
前記本体表面の少なくとも一部分上に設けられた平坦化層と
を備える基板ホルダ。 - 前記平坦化層が、複数の別個に形成された副層から形成される請求項1に記載の基板ホルダ。
- 前記平坦化層が、少なくとも前記バールの前記終端面は覆わない請求項1または2に記載の基板ホルダ。
- 前記バールが側面を有し、前記平坦化層が、少なくとも前記バールの前記側面の一部分は覆わず、望ましくは前記バールの前記側面のすべてを覆わない請求項3に記載の基板ホルダ。
- 前記平坦化層が、シリコンベースの材料、例えば有機前駆物質から形成される請求項1から4のいずれか一項に記載の基板ホルダ。
- 前記平坦化層が、酸化珪素ベースの材料または窒化珪素ベースの材料から形成される請求項5に記載の基板ホルダ。
- 前記平坦化層が、水素、メチル、フルオロ、ビニルなどから成る群から選択された官能基を含む請求項5または請求項6に記載の基板ホルダ。
- 前記平坦化層が、ベンゾシクロブテンなど炭素ベースの材料から形成される請求項1から4のいずれか一項に記載の基板ホルダ。
- 前記本体が、SiC(炭化珪素)、SiSiC(シリコン処理をした炭化珪素)、Si3N4(窒化珪素)、石英、およびZerodur(商標)ガラスセラミックから成る群から選択された材料から形成される請求項1から8のいずれか一項に記載の基板ホルダ。
- 前記平坦化層上に設けられた電子的コンポーネントをさらに備える請求項1から9のいずれか一項に記載の基板ホルダ。
- パターニングデバイスを支持するように構成されたサポート構造と、
前記パターニングデバイスによってパターニングされたビームを基板上に投影するように配置された投影システムと、
前記基板を保持するように配置された基板ホルダとを備え、
前記基板ホルダが、表面を有する本体と、前記表面から突出し、基板を支持する終端面を有する複数のバールと、および前記本体表面の少なくとも一部分上に設けられた平坦化層とを備える、リソグラフィ装置。 - 前記平坦化層がシリコンベースの材料から形成される請求項11に記載のリソグラフィ装置。
- 前記平坦化層が、ベンゾシクロブテンから形成される請求項11に記載のリソグラフィ装置。
- リソグラフィ装置を使用するデバイス製造方法であって、
パターニング手段によってパターニングされたビームを基板ホルダに保持された基板の上に投影する工程を含み、
前記基板ホルダが、表面を有する本体と、前記表面から突出し、基板を支持するための終端面を有する複数のバールと、前記本体表面の少なくとも一部分上に設けられた平坦化層とを備える、デバイス製造方法。 - リソグラフィ装置で使用する基板ホルダを製造する方法であって、
表面および前記表面から突出し、基板を支持するための終端面を有する複数のバールを有する本体を設ける工程と、
前記本体表面の少なくとも一部分上に平坦化層を形成する工程とを含む方法。
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US42291810P | 2010-12-14 | 2010-12-14 | |
US61/422,918 | 2010-12-14 |
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JP2012129524A true JP2012129524A (ja) | 2012-07-05 |
JP5378495B2 JP5378495B2 (ja) | 2013-12-25 |
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NL (1) | NL2007768A (ja) |
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JP2013089956A (ja) * | 2011-10-14 | 2013-05-13 | Asml Netherlands Bv | 基板ホルダ、リソグラフィ装置、デバイス製造方法、及び基板ホルダ製造方法 |
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JP2020525820A (ja) * | 2017-06-29 | 2020-08-27 | エーエスエムエル ネザーランズ ビー.ブイ. | システム、リソグラフィ装置、及び基板サポート上における酸化の低減又は酸化物の除去方法 |
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US9989867B2 (en) | 2018-06-05 |
US20170235235A1 (en) | 2017-08-17 |
US11003094B2 (en) | 2021-05-11 |
US20190235395A1 (en) | 2019-08-01 |
US11454895B2 (en) | 2022-09-27 |
JP5378495B2 (ja) | 2013-12-25 |
US20180284625A1 (en) | 2018-10-04 |
US9423699B2 (en) | 2016-08-23 |
US9678445B2 (en) | 2017-06-13 |
US10254660B2 (en) | 2019-04-09 |
NL2007768A (en) | 2012-06-18 |
US20230048272A1 (en) | 2023-02-16 |
US20210278772A1 (en) | 2021-09-09 |
US20120147353A1 (en) | 2012-06-14 |
US20160349632A1 (en) | 2016-12-01 |
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