JP2012123141A - Electro-optical device, manufacturing method for electro-optical device, and projection type display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electro-optical device, a manufacturing method for an electro-optical device, and a projection type display device, which can achieve both reduction in connection resistance between a metal layer and a pixel electrode and reduction in sheet resistance of the pixel electrode even in a structure where the metal layer and the pixel electrode including a metal oxide layer are in contact with each other.SOLUTION: Of a first metal oxide layer 91 and a second metal oxide layer 92 used for a pixel electrode 9a in a liquid crystal display device 100, the first metal oxide layer 91 on the lower layer side includes an ITO film with a low content of oxygen; therefore, the connection resistance between the first metal oxide layer 91 and a drain electrode 6b is low. Since the second metal oxide layer 92 includes an ITO film with a high content of oxygen, the sheet resistance is low. When the ITO film of the pixel electrode 9a is formed, the target is not changed between in a first sputtering step ST1 and in a second sputtering step ST2 but the oxygen gas flow rate ratio in the second sputtering step ST2 is set high.

Description

  The present invention relates to an electro-optical device including a translucent pixel electrode on one surface side of an element substrate, a method for manufacturing the electro-optical device, and a projection display device including the electro-optical device.

  In an electro-optical device such as a liquid crystal device or an organic electroluminescence device, a light-transmitting pixel electrode made of an ITO (Indium Tin Oxide) film is formed on one side of the element substrate, and the light-transmitting pixel electrode Is electrically connected to the pixel transistor by contacting a metal layer made of an aluminum layer or the like formed on the lower layer side (see Patent Document 1).

JP-A-11-352515

  However, since ITO is a metal oxide, if a structure in which a light-transmitting pixel electrode made of an ITO film is in contact with a metal layer made of an aluminum layer or the like as in the invention described in Patent Document 1, a pixel is formed. There is a problem in that oxygen of the electrode (ITO film) and the metal layer (aluminum layer) are combined, and the connection resistance is remarkably increased. However, when an ITO film with a reduced oxygen content is used as a pixel electrode, there is a problem that the sheet resistance of the pixel electrode increases.

  Such a problem is not limited to the case where an ITO film is used for the pixel electrode, but is a problem that similarly occurs when a metal oxide other than ITO such as IZO (Indium Zinc Oxide) is used. The above-mentioned problem is not limited to the case where an aluminum film is used for the metal layer, but is a problem that occurs similarly when a metal layer such as titanium is used.

  In view of the above problems, the object of the present invention is to reduce the connection resistance between the metal layer and the pixel electrode, and the pixel electrode, even when the structure in which the metal layer and the pixel electrode made of the metal oxide layer are in contact with each other is adopted. It is an object of the present invention to provide an electro-optical device capable of reducing both sheet resistance, a method of manufacturing the electro-optical device, and a projection display device including the electro-optical device.

  In order to solve the above-described problems, the present invention provides a metal layer provided on one side of a substrate body for an element substrate, and a light-transmitting pixel electrode that contacts the metal layer on the side opposite to the substrate body. The pixel electrode includes a light-transmitting first metal oxide layer in contact with the metal layer, and a side where the metal layer is located with respect to the first metal oxide layer. A translucent second metal oxide layer having the same metal species as that of the first metal oxide layer and having a larger oxygen content than the first metal oxide layer; It is characterized by providing.

  According to the present invention, the second metal oxide layer can realize a configuration in which the sheet resistance is smaller than that of the first metal oxide layer.

  In the present invention, of the first metal oxide layer and the second metal oxide layer used for the pixel electrode, the first metal oxide layer has a low oxygen content, so that even when it is in contact with the metal layer, Since oxygen is not provided, the connection resistance with the metal layer is low. Here, since the first metal oxide layer has a low oxygen content, the sheet resistance is high, but the first metal oxide layer is laminated with a second metal oxide layer having a high oxygen content. The second metal oxide layer has a low sheet resistance. Therefore, according to the present invention, even when the structure in which the metal layer and the pixel electrode made of the metal oxide layer are in contact with each other is adopted, the connection resistance between the metal layer and the pixel electrode is reduced, and the sheet resistance of the pixel electrode is reduced. Both can be aimed at.

  According to another aspect of the present invention, there is provided an electric circuit comprising: a metal layer provided on one side of a substrate body for an element substrate; and a translucent pixel electrode in contact with the metal layer on the side opposite to the substrate body. In the method of manufacturing an optical device, in forming the pixel electrode, a first sputtering step of forming a light-transmitting first metal oxide layer in contact with the metal layer by a reactive sputtering method; Using a target having the same composition as the sputtering process, a second metal oxide layer is formed on the first metal oxide layer by reactive sputtering under a condition in which the oxygen gas flow rate ratio is increased from that of the first sputtering process. And performing a second sputtering step.

  According to such a configuration, the pixel electrode in which the first metal oxide layer and the second metal oxide layer are stacked can be formed by changing the oxygen gas flow rate ratio without changing the target. Will not drop.

  The present invention is effective when applied to a case where the first metal oxide layer and the second metal oxide layer have an ITO (Indium Tin Oxide) film. In the case of an ITO film, since the connection resistance with the metal layer and the sheet resistance vary depending on the amount of oxygen, the effect when the present invention is applied is remarkable.

  The present invention is effective when applied to a case where the layer in contact with the pixel electrode in the metal layer is made of a metal material mainly composed of aluminum, titanium, tantalum, or niobium. Since metal materials such as aluminum, titanium, tantalum, and niobium are combined with oxygen to form an insulating oxide film, the effect of applying the present invention is remarkable.

  In the present invention, an interlayer insulating film is provided between the metal layer and the pixel electrode, and the metal layer and the pixel electrode are in contact with each other in a contact hole provided in the interlayer insulating film. Can do.

  In the present invention, it is possible to adopt a configuration in which the metal layer is a reflective layer stacked on the pixel electrode on the side where the substrate body is located.

  The electro-optical device and the method for manufacturing the electro-optical device according to the invention can be applied to various electro-optical devices such as a liquid crystal device and an organic electroluminescence device. Among these electro-optical devices, when the present invention is applied to a liquid crystal device, the element substrate holds a liquid crystal layer between the element substrate and a counter substrate arranged to face one surface of the substrate body. In the element substrate for a liquid crystal device, an alignment film is provided on the side where the counter substrate is located with respect to the pixel electrode.

  The electro-optical device according to the present invention is used in electrical equipment such as various direct-view display devices. Further, when the electro-optical device according to the present invention is a liquid crystal device, it is used as a light valve of a projection display device or a direct-view display device. Such a projection display device is provided with a light source unit that emits light supplied to the electro-optic and a projection optical system that projects light modulated by the liquid crystal device.

It is a block diagram which shows the electric constitution of the liquid crystal device to which this invention is applied. It is explanatory drawing of the liquid crystal panel used for the liquid crystal device which concerns on Embodiment 1 of this invention. It is explanatory drawing of the pixel of the liquid crystal device which concerns on Embodiment 1 of this invention. It is explanatory drawing of the pixel electrode used for the liquid crystal device which concerns on Embodiment 1 of this invention. In the manufacturing method of the liquid crystal device which concerns on Embodiment 1 of this invention, it is explanatory drawing which shows the conditions at the time of forming the ITO film | membrane which comprises a pixel electrode. It is explanatory drawing which expands and shows the connection part of the drain electrode and pixel electrode in the liquid crystal device which concerns on Embodiment 2 of this invention. It is explanatory drawing of the liquid crystal device which concerns on Embodiment 3 of this invention. It is explanatory drawing which shows the conditions at the time of forming the ITO film | membrane which comprises a pixel electrode in the manufacturing method of the liquid crystal device which concerns on another embodiment of this invention. It is a schematic block diagram of the projection type display apparatus using the liquid crystal device to which this invention is applied.

  Embodiments of the present invention will be described with reference to the drawings. In the following description, the case where the present invention is applied to a liquid crystal device and a manufacturing method thereof among various electro-optical devices will be mainly described. In the drawings referred to in the following description, the scales are different for each layer and each member so that each layer and each member have a size that can be recognized on the drawing.

[Embodiment 1]
(overall structure)
FIG. 1 is a block diagram showing an electrical configuration of a liquid crystal device (electro-optical device) to which the present invention is applied. In FIG. 1, a liquid crystal device 100 has a liquid crystal panel 100p in a TN (Twisted Nematic) mode or a VA (Vertical Alignment) mode, and the liquid crystal panel 100p has a plurality of pixels 100a arranged in a matrix in the central region. The pixel area 10a (image display area) is provided. In the liquid crystal panel 100p, in the element substrate 10 (see FIG. 2 and the like) described later, a plurality of data lines 6a and a plurality of scanning lines 3a extend vertically and horizontally inside the pixel region 10a, and correspond to the intersections thereof. The pixel 100a is configured at the position where the image is to be processed. In each of the plurality of pixels 100a, a pixel transistor 30 made of a field effect transistor and a pixel electrode 9a described later are formed. The data line 6 a is electrically connected to the source of the pixel transistor 30, the scanning line 3 a is electrically connected to the gate of the pixel transistor 30, and the pixel electrode 9 a is electrically connected to the drain of the pixel transistor 30. Has been.

  In the element substrate 10, a scanning line driving circuit 104 and a data line driving circuit 101 are provided on the outer peripheral side from the pixel region 10 a. The data line driving circuit 101 is electrically connected to each data line 6a, and sequentially supplies the image signal supplied from the image processing circuit to each data line 6a. The scanning line driving circuit 104 is electrically connected to each scanning line 3a, and sequentially supplies a scanning signal to each scanning line 3a.

  In each pixel 100a, the pixel electrode 9a is opposed to a common electrode formed on a counter substrate 20 (see FIG. 2 and the like), which will be described later, via a liquid crystal layer, and constitutes a liquid crystal capacitor 50a. Each pixel 100a is provided with a holding capacitor 55 (capacitance element) in parallel with the liquid crystal capacitor 50a in order to prevent fluctuations in the image signal held in the liquid crystal capacitor 50a. In this embodiment, in order to form the storage capacitor 55, the capacitor line 5b extending in parallel with the scanning line 3a is formed across the plurality of pixels 100a, and the common potential Vcom is applied to the capacitor line 5b. The common potential line 5c is electrically connected.

(Configuration of the liquid crystal panel 100p)
FIG. 2 is an explanatory diagram of the liquid crystal panel 100p used in the liquid crystal device 100 according to Embodiment 1 of the present invention. FIGS. 2A and 2B are respectively liquid crystals of the liquid crystal device 100 to which the present invention is applied. It is the top view which looked at the panel 100p from the counter substrate side with each component, and its HH 'sectional drawing.

  As shown in FIGS. 2A and 2B, in the liquid crystal panel 100p, the element substrate 10 (electro-optical device substrate / liquid crystal device substrate) and the counter substrate 20 are separated by a sealing material 107 through a predetermined gap. The sealing material 107 is provided in a frame shape along the outer edge of the counter substrate 20. The sealing material 107 is an adhesive made of a photo-curing resin, a thermosetting resin, or the like, and is mixed with a gap material such as glass fiber or glass beads for setting the distance between both substrates to a predetermined value.

  In the liquid crystal panel 100p having such a configuration, the element substrate 10 and the counter substrate 20 are both rectangular, and the pixel region 10a described with reference to FIG. 1 is provided as a rectangular region at the approximate center of the liquid crystal panel 100p. Yes. Corresponding to this shape, the sealing material 107 is also provided in a substantially rectangular shape, and a substantially rectangular peripheral region 10b is provided in a frame shape between the inner peripheral edge of the sealing material 107 and the outer peripheral edge of the pixel region 10a. . In the element substrate 10, a data line driving circuit 101 and a plurality of terminals 102 are formed along one side of the element substrate 10 outside the pixel region 10 a, and scanning line driving is performed along another side adjacent to the one side. A circuit 104 is formed. Note that a flexible wiring board (not shown) is connected to the terminal 102, and various potentials and various signals are input to the element substrate 10 through the flexible wiring board.

  As will be described in detail later, the pixel transistor 10 described with reference to FIG. 1 and the pixel electrode 9a electrically connected to the pixel transistor 30 are matrixed in the pixel region 10a on the substrate surface on one side of the element substrate 10. An alignment film 16 is formed on the upper layer side of the pixel electrode 9a.

  In addition, on one side of the element substrate 10, a dummy pixel electrode 9b (see FIG. 2B) formed simultaneously with the pixel electrode 9a is formed in the peripheral region 10b. For the dummy pixel electrode 9b, a configuration in which the dummy pixel transistor is electrically connected, a configuration in which the dummy pixel transistor is not provided, and a configuration in which the dummy pixel electrode is directly electrically connected to the wiring, or a floating state in which no potential is applied The structure which exists in is adopted. The dummy pixel electrode 9b compresses the height positions of the pixel region 10a and the peripheral region 10b when the surface on which the alignment film 16 is formed in the element substrate 10 is flattened by polishing, so that the alignment film 16 is formed. Contributes to flattening the surface. Further, if the dummy pixel electrode 9b is set to a predetermined potential, it is possible to prevent the disorder of the alignment of the liquid crystal molecules at the outer peripheral side end of the pixel region 10a.

  A common electrode 21 is formed on one side of the counter substrate 20 facing the element substrate 10, and an alignment film 26 is formed on the common electrode 21. The common electrode 21 is formed across the plurality of pixels 100a as substantially the entire surface of the counter substrate 20 or a plurality of strip electrodes. Further, a light shielding layer 108 is formed on the lower layer side of the common electrode 21 on one surface side of the counter substrate 20 facing the element substrate 10. In this embodiment, the light shielding layer 108 is formed in a frame shape extending along the outer peripheral edge of the pixel region 10a, and functions as a parting. Here, the outer peripheral edge of the light shielding layer 108 is located with a gap between the inner peripheral edge of the sealing material 107 and the light shielding layer 108 and the sealing material 107 do not overlap. In the counter substrate 20, the light shielding layer 108 may be formed in a region that overlaps with a region sandwiched between adjacent pixel electrodes 9a.

  In the liquid crystal panel 100p configured as described above, the element substrate 10 is electrically connected between the element substrate 10 and the counter substrate 20 in a region overlapping the corner portion of the counter substrate 20 outside the sealant 107. The inter-substrate conduction electrode 109 is formed. The inter-substrate conducting material 109 a containing conductive particles is disposed on the inter-substrate conducting electrode 109, and the common electrode 21 of the counter substrate 20 is interposed via the inter-substrate conducting material 109 a and the inter-substrate conducting electrode 109. Are electrically connected to the element substrate 10 side. Therefore, the common potential Vcom is applied to the common electrode 21 from the element substrate 10 side.

  The sealing material 107 is provided along the outer peripheral edge of the counter substrate 20 with substantially the same width dimension. For this reason, the sealing material 107 is substantially rectangular. However, the sealing material 107 is provided so as to pass inside avoiding the inter-substrate conduction electrode 109 in a region overlapping the corner portion of the counter substrate 20, and the corner portion of the sealing material 107 has a substantially arc shape.

  In the liquid crystal device 100 having such a configuration, when the pixel electrode 9a and the common electrode 21 are formed of a light-transmitting conductive film as in this embodiment, a transmissive liquid crystal device can be formed. On the other hand, when the common electrode 21 is formed of a light-transmitting conductive film and a reflective layer is provided on the lower side of the pixel electrode 9a as in Embodiment 3 described later, a reflective liquid crystal device is configured. Can do. When the liquid crystal device 100 is of a reflective type, light incident from the counter substrate 20 side is modulated while being reflected and emitted from the element substrate 10 side to display an image. In the case where the liquid crystal device 100 is a transmissive type, the light incident from one of the element substrate 10 and the counter substrate 20 is modulated while being transmitted through the other substrate, and an image is displayed.

  The liquid crystal device 100 can be used as a color display device of an electronic device such as a mobile computer or a mobile phone. In this case, a color filter (not shown) and a protective film are formed on the counter substrate 20. Further, in the liquid crystal device 100, the polarizing film, the retardation film, the polarizing plate, etc. have a predetermined orientation with respect to the liquid crystal panel 100p according to the type of the liquid crystal layer 50 to be used and the normally white mode / normally black mode. Placed in. Furthermore, the liquid crystal device 100 can be used as a light valve for RGB in a projection display device (liquid crystal projector) described later. In this case, each color liquid crystal device 100 for RGB receives light of each color separated through RGB color separation dichroic mirrors as projection light, so that no color filter is formed.

  In this embodiment, the liquid crystal device 100 is a transmissive liquid crystal device used as a RGB light valve in a projection display device described later, and light incident from the counter substrate 20 is transmitted through the element substrate 10 and emitted. The case will be mainly described. Further, in this embodiment, the liquid crystal device 100 will be described focusing on the case where the liquid crystal layer 50 includes a VA mode liquid crystal panel 100p using a nematic liquid crystal compound having a negative dielectric anisotropy.

(Specific pixel configuration)
FIG. 3 is an explanatory diagram of a pixel of the liquid crystal device 100 according to Embodiment 1 of the present invention. FIGS. 3A and 3B are each an element substrate 10 used in the liquid crystal device 100 to which the present invention is applied. 4 is a plan view of adjacent pixels and a cross-sectional view when the liquid crystal device 100 is cut at a position corresponding to the line FF ′ in FIG. In FIG. 3A, the semiconductor layer 1a is indicated by a thin and short dotted line, the scanning line 3a is indicated by a thick solid line, the data line 6a and a thin film formed simultaneously with the data line 6a are indicated by an alternate long and short dash line, and the capacitor line 5b (holding) The second electrode of the capacitor 55 is indicated by a two-dot chain line, and the pixel electrode 9a is indicated by a thick and long broken line. In FIG. 3A, the lower electrode layer 4a (first electrode of the storage capacitor 55) and the opening 40b of the etching stopper layer 40a are indicated by a double thin solid line. Of these, the outer solid line corresponds to the formation region of the lower electrode layer 4a, and the inner solid line corresponds to the opening 40b of the etching stopper layer 40a. In addition, a dielectric layer 42a is formed in a region overlapping the capacitance line 5b indicated by a two-dot chain line.

  As shown in FIG. 3A, a rectangular pixel electrode 9a is formed on each of the plurality of pixels 100a on the element substrate 10, and a data line is formed along the vertical and horizontal boundaries of each pixel electrode 9a. 6a and scanning line 3a are formed. Each of the data line 6a and the scanning line 3a extends linearly, and a pixel transistor 30 is formed in a region where the data line 6a and the scanning line 3a intersect. On the element substrate 10, a capacitor line 5b is formed so as to overlap the scanning line 3a. In this embodiment, the capacitor line 5b includes a main line portion extending linearly so as to overlap the scanning line 3a, and a sub-line portion extending so as to overlap the data line 6a at the intersection of the data line 6a and the scanning line 3a. It has.

  As shown in FIGS. 3A and 3B, the element substrate 10 is a pixel formed on the surface (one surface side) of the translucent substrate body 10w such as a quartz substrate or a glass substrate on the liquid crystal layer 50 side. The counter substrate 20 is mainly composed of an electrode 9a, a pixel transistor 30 for pixel switching, and an alignment film 16. A counter substrate 20 is a translucent substrate body 20w such as a quartz substrate or a glass substrate, and a surface on the liquid crystal layer 50 side. It is mainly composed of the common electrode 21 and the alignment film 26 formed on the one surface side facing the element substrate 10.

  In the element substrate 10, a pixel transistor 30 including the semiconductor layer 1a is formed in each of the plurality of pixels 100a. The semiconductor layer 1a includes a channel region 1g, a source region 1b, and a drain region 1c that are opposed to the gate electrode 3c, which is a part of the scanning line 3a, via the translucent gate insulating layer 2. The source region 1b and the drain region 1c each have a low concentration region and a high concentration region. The semiconductor layer 1a is composed of, for example, a polycrystalline silicon film or the like formed on a transparent base insulating film 12 made of a silicon oxide film or the like on the substrate body 10w, and the gate insulating layer 2 is formed by a CVD method or the like. The silicon oxide film and the silicon nitride film formed by the above. The gate insulating layer 2 may have a two-layer structure of a silicon oxide film obtained by thermally oxidizing the semiconductor layer 1a and a silicon oxide film or silicon nitride film formed by a CVD method or the like. For the scanning line 3a, a conductive polysilicon film, a metal silicide film, or a metal film is used.

  A translucent first interlayer insulating film 41 made of a silicon oxide film or the like is formed on the upper layer side of the scanning line 3a, and a lower electrode layer 4a (first electrode) is formed on the first interlayer insulating film 41. Is formed. The lower electrode layer 4a is formed in a substantially L-shape extending along the scanning line 3a and the data line 6a with a position where the scanning line 3a and the data line 6a intersect as a base point.

  In this embodiment, the lower electrode layer 4a is made of a conductive polysilicon film, a metal silicide film, a metal film or the like, and is electrically connected to the drain region 1c through the contact hole 7c.

  A dielectric layer 42a is formed on the upper layer side of the lower electrode layer 4a. Further, on the upper layer side of the dielectric layer 42a, a capacitor line 5b (second electrode) is formed so as to face the lower electrode layer 4a with the dielectric layer 42a interposed therebetween. The capacitor line 5b, the dielectric layer 42a, and A storage capacitor 55 is formed by the lower electrode layer 4a. The capacitor line 5b is made of a conductive polysilicon film, a metal silicide film, a metal film, or the like. In this embodiment, the capacitor line 5b is composed of a two-layer structure of an aluminum layer and a titanium nitride film, or a copper-containing aluminum layer. Here, the lower electrode layer 4a, the dielectric layer 42a, and the capacitor line 5b are formed on the upper layer side of the pixel transistor 30 and overlap the pixel transistor 30 in plan view. Therefore, the storage capacitor 55 is formed on the upper layer side of the pixel transistor 30 and overlaps at least the pixel transistor 30 in plan view.

  The dielectric layer 42a is made of a silicon oxide film, a silicon nitride film, or the like. Further, if the dielectric layer 42a is formed of a high dielectric constant insulating film such as an aluminum oxide film, a titanium oxide film, a tantalum oxide film, a niobium oxide film, a hafnium oxide film, a lanthanum oxide film, or a zirconium oxide film, The capacitance per unit area can be increased. The dielectric layer 42a may be a laminated film in which a plurality of the above-described high dielectric constant insulating films are laminated, or a multi-component high dielectric constant insulating film in which the above metal oxide is mixed. In this embodiment, the dielectric layer 42a has substantially the same shape as the capacitor line 5b and is formed in the same region. Further, the end edge 42e of the dielectric layer 42a and the end edge 5e of the capacitance line 5b are at positions overlapping the lower electrode layer 4a.

  In this embodiment, an etching stopper layer 40a made of a silicon oxide film or the like is formed between the lower electrode layer 4a and the dielectric layer 42a. The etching stopper layer 40a includes one of the lower electrode layers 4a. An opening 40b is formed in a region overlapping the portion. For this reason, the lower electrode layer 4a and the capacitor line 5b are opposed to each other through the dielectric layer 42a in the opening 40b to form a storage capacitor 55. The etching stopper layer 40a is formed in a region that overlaps the end edge 42e of the dielectric layer 42a and the end edge 5e of the capacitor line 5b. In this embodiment, the etching stopper layer 40a is formed over a wide range in addition to the region overlapping the end edge 42e of the dielectric layer 42a and the end edge 5e of the capacitor line 5b. The etching stopper layer 40a may be limitedly formed along a region overlapping the end edge 42e of 42a and the end edge 5e of the capacitor line 5b. Further, when the dielectric layer 42a and the capacitor line 5b partially protrude outward from the edge of the lower electrode layer 4a, the region overlaps with the edge 42e of the dielectric layer 42a and the edge 5e of the capacitor line 5b. However, the formation of the etching stopper layer 40a may be omitted for the region where the lower electrode layer 4a is not provided on the lower layer side.

  A translucent second interlayer insulating film 43 made of a silicon oxide film or the like is formed on the upper side of the capacitor line 5b, and a data line 6a and a drain electrode 6b are formed on the upper layer of the second interlayer insulating film 43. Yes. Data line 6a is electrically connected to source region 1b through contact hole 7a. The drain electrode 6b is electrically connected to the lower electrode layer 4a through the contact hole 7b, and is electrically connected to the drain region 1c through the lower electrode layer 4a. In this embodiment, the data line 6a and the drain electrode 6b are metal layers made of a metal material mainly composed of aluminum, titanium, tantalum, or niobium. When aluminum films are used for the data lines 6a and the drain electrodes 6b, an alloy containing copper or the like is often used as the aluminum film.

  A light-transmitting third interlayer insulating film 44 made of a silicon oxide film or the like is formed on the upper side of the data line 6a and the drain electrode 6b. In the third interlayer insulating film 44, a contact hole 7d leading to the drain electrode 6b is formed. A pixel electrode 9a made of an ITO (Indium Tin Oxide) film, an IZO (Indium Zinc Oxide) film, or other metal oxide film (translucent conductive film) is formed on the third interlayer insulating film 44, The pixel electrode 9a is in contact with the drain electrode 6b at the bottom of the contact hole 7d of the third interlayer insulating film 44 located between the pixel electrode 9a and the drain electrode 6b, and is electrically connected to the drain electrode 6b. In this embodiment, the surface of the third interlayer insulating film 44 is a flat surface.

  Here, the dummy pixel electrode 9b (not shown in FIG. 3) described with reference to FIG. 2B is formed on the surface of the third interlayer insulating film 44, and the dummy pixel electrode 9b is The light-transmitting conductive film is formed simultaneously with the pixel electrode 9a.

An alignment film 16 is formed on the surface of the pixel electrode 9a. The alignment film 16 is made of a resin film such as polyimide or an oblique deposition film such as a silicon oxide film. In this embodiment, the alignment film 16 is an obliquely deposited film of SiO _x (x <2), SiO ₂ , TiO ₂ , MgO, Al ₂ O ₃ , In ₂ O ₃ , Sb ₂ O ₃ , Ta ₂ O ₅ or the like. A transparent protective film 17 such as a silicon oxide film or a silicon nitride film is formed between the alignment film 16 and the pixel electrode 9a. The protective film 17 has a flat surface, and fills a recess formed between adjacent pixel electrodes 9a. Therefore, the alignment film 16 is formed on the flat surface of the protective film 17.

In the counter substrate 20, an ITO film, an IZO film, or other metal oxide film is formed on the surface of the translucent substrate body 20 w such as a quartz substrate or a glass substrate on the liquid crystal layer 50 side (the surface facing the element substrate 10). A common electrode 21 made of (translucent conductive film) is formed, and an alignment film 26 is formed so as to cover the common electrode 21. Similar to the alignment film 16, the alignment film 26 is made of a resin film such as polyimide or an oblique deposition film such as a silicon oxide film. In this embodiment, the alignment film 26 is an obliquely deposited film such as SiO _x (x <2), SiO ₂ , TiO ₂ , MgO, Al ₂ O ₃ , In ₂ O ₃ , Sb ₂ O ₃ , Ta ₂ O _5. A protective film 27 such as a silicon oxide film or a silicon nitride film is formed between the alignment film 26 and the common electrode 21. The protective film 27 has a flat surface, and the alignment film 26 is formed on the flat surface. The alignment films 16 and 26 vertically align the nematic liquid crystal compound having negative dielectric anisotropy used for the liquid crystal layer 50, and the liquid crystal panel 100p operates as a normally black VA mode.

  Note that the data line driving circuit 101 and the scanning line driving circuit 104 described with reference to FIGS. 1 and 2 are complementary transistor circuits each including an N-channel driving transistor and a P-channel driving transistor. Etc. are configured. Here, the driving transistor is formed by utilizing a part of the manufacturing process of the pixel transistor 30. Therefore, the region where the data line driving circuit 101 and the scanning line driving circuit 104 are formed in the element substrate 10 also has a cross-sectional configuration substantially similar to the cross-sectional configuration shown in FIG.

(Detailed configuration of pixel electrode 9a)
4A and 4B are explanatory diagrams of the pixel electrode 9a used in the liquid crystal device 100 according to Embodiment 1 of the present invention. FIGS. 4A and 4B show the connection portion between the drain electrode 6b and the pixel electrode 9a. FIG. 4 is an explanatory diagram showing an enlarged view and an explanatory diagram showing the relationship between the oxygen content (oxygen gas flow ratio during reactive sputtering) and the resistance of the translucent metal oxide layer used for the pixel electrode 9a. .

  As shown in FIGS. 3 and 4A, in the liquid crystal device 100 of this embodiment, the pixel electrode 9a made of an ITO film, an IZO film, or other metal oxide film (translucent conductive film) is formed in the contact hole 7d. At the bottom, the drain electrode 6b made of a metal layer mainly composed of aluminum, titanium, tantalum or niobium is in contact with the drain electrode 6b. In this embodiment, the pixel electrode 9a is made of an ITO film, and the drain electrode 6b is made of a copper-containing aluminum layer. In such a structure, when oxygen is supplied from the ITO film constituting the pixel electrode 9a to the aluminum film constituting the drain electrode 6b, an insulating film is formed on the surface of the drain electrode 6b, and the connection resistance increases. Such an increase in connection resistance similarly occurs even when an IZO film or other metal oxide film is used for the pixel electrode 9a and a metal layer such as titanium, tantalum, or niobium is used for the drain electrode 6b.

  Therefore, in this embodiment, the pixel electrode 9a has a light-transmitting first metal oxide layer 91 in contact with the drain electrode 6b (metal layer) and an upper layer side (the drain electrode 6b is positioned on the first metal oxide layer 91). A second metal oxide layer 92 laminated on the opposite side) is used, and the second metal oxide layer 92 has the same metal species as the first metal oxide layer 91, and The oxygen content is greater than that of the first metal oxide layer 91. More specifically, the pixel electrode 9a includes a lower ITO film (first metal oxide layer 91) in contact with the drain electrode 6b (metal layer) and an upper ITO film (second metal oxide layer 92). The upper ITO film (second metal oxide layer 92) is larger than the lower ITO film (first metal oxide layer 91).

  In this embodiment, the first metal oxide layer 91 and the second metal oxide layer 92 have the same film thickness. For example, the film thickness of the first metal oxide layer 91 and the second metal oxide layer The film thickness 92 is about 50 nm. In addition, since the first metal oxide layer 91 and the second metal oxide layer 92 are patterned in the same etching process, they are formed in the same region with the same shape.

  Here, as the ITO film has a higher oxygen content, the sheet resistance is lower as shown by the solid line L1 in FIG. 4B, whereas the contact resistance with the metal layer (aluminum layer) is shown as shown by the solid line L2. Tend to be high. Conversely, as the ITO film has a lower oxygen content, the contact resistance with the metal layer is lower, while the sheet resistance tends to be higher. In this embodiment, an ITO film having a low oxygen content is used as the first metal oxide layer 91 in contact with the drain electrode 6b (metal layer) in the pixel electrode 9a, and the second metal oxide layer stacked on the upper layer side thereof. An ITO film having a large oxygen content is used as 92. For this reason, the pixel electrode 9a has a low connection resistance with the drain electrode 6b (metal layer) and a low sheet resistance.

  Such ITO films having different oxygen contents can be realized by changing the oxygen flow rate ratio in the sputtering gas (argon gas + oxygen gas) introduced into the chamber in the reactive sputtering process described later. Specifically, as shown in FIG. 4B, if the oxygen gas flow rate ratio is set high, an ITO film with a large oxygen content can be formed, and if the oxygen gas flow rate ratio is set low, the oxygen content of A small ITO film can be formed.

(Manufacturing method of the liquid crystal device 100)
FIG. 5 is an explanatory diagram showing conditions for forming the ITO film constituting the pixel electrode 9a in the method for manufacturing the liquid crystal device 100 according to Embodiment 1 of the present invention.

  In manufacturing the liquid crystal device 100 of this embodiment, first, as shown in FIG. 3B, the pixel transistor 30, the storage capacitor 55, the drain electrode 6b, the third interlayer insulating film 44, and the like are formed by a known method. Thereafter, a contact hole 7 c is formed in the third interlayer insulating film 44.

  Next, when forming the pixel electrode 9a, after performing a film forming process of forming an ITO film (metal oxide layer) on the third interlayer insulating film 44, the ITO film is patterned. In this embodiment, in the film forming step, an ITO film is formed using a reactive sputtering method. More specifically, when a sputtering apparatus such as a DC magnetron sputtering apparatus is used, ITO gas is introduced into the chamber and argon gas is introduced into the chamber to form an ITO film, and oxygen gas is introduced. The temperature at that time is, for example, 200 ° C. or higher, and a crystalline ITO film can be formed by setting such temperature conditions.

  In this film forming process, in this embodiment, first, as shown in FIG. 5, first sputter for forming a transparent first metal oxide layer 91 in contact with the drain electrode 6b (metal layer) by reactive sputtering. Step ST1 is performed, and then a second metal oxide layer 92 is formed on the upper layer of the first metal oxide layer 91 by a reactive sputtering method under a condition in which the oxygen gas flow rate ratio is increased compared to the first sputtering step. At that time, the target having the same composition is used in the first sputtering step ST1 and the second sputtering step ST2.

  Here, the oxygen gas flow rate ratio in the first sputtering step ST1 and the oxygen gas flow rate ratio in the second sputtering step ST2 are, for example, under the following conditions.

Oxygen gas flow rate ratio in the first sputtering step ST1 Argon gas flow rate: Oxygen gas flow rate = 100 SCCM: 0.5 SCCM
Oxygen gas flow ratio in the second sputtering step ST2 Argon gas flow rate: Oxygen gas flow rate = 100 SCCM: 1.5 SCCM

  According to this configuration, the first metal oxide layer 91 made of an ITO film having a low oxygen content and the second metal oxide layer 92 made of an ITO film having a high oxygen content are formed on the third interlayer insulating film 44. And a laminated film can be formed. Therefore, if the first metal oxide layer 91 and the second metal oxide layer 92 are continuously etched in the same process with an etching mask formed on the second metal oxide layer 92, the pixel electrode 9a is obtained. Can be formed.

  Thereafter, when the protective film 17 and the alignment film 16 shown in FIG. 3B are formed by a well-known method, the element substrate 10 described with reference to FIG. 3 and the like can be obtained.

(Main effects of this form)
As described above, in the liquid crystal device 100 of the present embodiment, the first metal oxide layer 91 among the first metal oxide layer 91 and the second metal oxide layer 92 used for the pixel electrode 9a has an oxygen content. Therefore, even when it is in contact with the drain electrode 6b (metal layer), oxygen is not provided to the drain electrode 6b, so that the connection resistance with the drain electrode 6b is low. Here, since the first metal oxide layer 91 has a low oxygen content, the sheet resistance is high. However, the first metal oxide layer 91 is laminated with the second metal oxide layer 92 having a high oxygen content. The second metal oxide layer 92 has a low sheet resistance. Therefore, according to this embodiment, even when the structure in which the drain electrode 6b made of a metal layer and the pixel electrode 9a made of a metal oxide layer (ITO film) are in contact with each other is adopted, the drain electrode 6b and the pixel electrode 9a It is possible to reduce both the connection resistance and the sheet resistance of the pixel electrode 9a.

  In this embodiment, when the ITO film constituting the pixel electrode 9a is formed, the oxygen gas flow rate ratio is changed without changing the target between the first sputtering process ST1 and the second sputtering process ST2. For this reason, even when the pixel electrode 9a in which the first metal oxide layer 91 and the second metal oxide layer 92 are stacked is formed, productivity does not decrease.

[Embodiment 2]
FIG. 6 is an explanatory diagram showing an enlarged connection portion between the drain electrode 6b and the pixel electrode 9a in the liquid crystal device 100 according to the second embodiment of the present invention. Since the basic configuration of this embodiment is substantially the same as that of Embodiment 1, common portions are denoted by the same reference numerals and description thereof is omitted.

  In the first embodiment, an inorganic alignment film is used as the alignment film 16, and the protective film 17 is formed between the alignment film 16 and the pixel electrode 9a. However, in this embodiment, as the alignment film 16, as shown in FIG. Since an organic alignment film such as polyimide is used, a protective film is not formed between the alignment film 16 and the pixel electrode 9a. Other configurations are the same as those of the first embodiment.

  Also in the liquid crystal device 100 having such a configuration, the first metal oxide layer 91 on the lower side of the first metal oxide layer 91 and the second metal oxide layer 92 used for the pixel electrode 9a is the same as in the first embodiment. The oxygen content is low, and the second metal oxide layer 92 on the upper layer side has a high oxygen content. For this reason, there exists an effect similar to Embodiment 1. FIG.

  In addition, in a metal oxide layer such as ITO, the higher the oxygen content, the lower the concentration of unbonded metal, so that the problem that metal atoms enter the alignment film 16 and deteriorate the alignment film 16 is less likely to occur. is there. Here, in this embodiment, in the pixel electrode 9a, the upper second metal oxide layer 92 in contact with the alignment film 16 is made of an ITO film having a high oxygen content. For this reason, according to this embodiment, the problem that metal atoms enter the alignment film 16 and deteriorate the alignment film 16 is unlikely to occur.

[Embodiment 3]
FIG. 7 is an explanatory diagram of the liquid crystal device 100 according to the third embodiment of the present invention. FIGS. 7A and 7B are cross-sectional views of the pixel and a connection portion between the drain electrode 6b and the pixel electrode 9a. It is explanatory drawing which expands and shows. Since the basic configuration of this embodiment is substantially the same as that of Embodiment 1, common portions are denoted by the same reference numerals and description thereof is omitted.

  In the first embodiment, the present invention is applied to make the pixel electrode 9a and the drain electrode 6b conductive at the bottom of the contact hole 7d. However, in the present embodiment, in the reflective liquid crystal device 100, the lower layer side of the pixel electrode 9a. The present invention is applied for the purpose of improving electrical continuity between the reflective layer 8a formed on the pixel electrode 9a and the pixel electrode 9a.

  More specifically, in the liquid crystal device 100 of the present embodiment, a reflective layer 8a made of an aluminum layer is formed on the third interlayer insulating film 44 so as to overlap the pixel electrode 9a. In 100, as indicated by an arrow L15 in FIG. 7A, light incident from the counter substrate 20 side is modulated while being reflected by the reflective layer 8a on the element substrate 10 side and emitted, thereby displaying an image. To do.

  In such a configuration, the reflective layer 8a and the drain electrode 6b are conducted through the contact hole 7d, and the pixel electrode 9a is in contact with the reflective layer 8a and is electrically connected to the drain electrode 6b through the reflective layer 8a.

  Also in the liquid crystal device 100 having such a configuration, the first metal oxide layer 91 on the lower side of the first metal oxide layer 91 and the second metal oxide layer 92 used for the pixel electrode 9a is the same as in the first embodiment. The oxygen content is low, and the second metal oxide layer 92 on the upper layer side has a high oxygen content. For this reason, since the first metal oxide layer 91 has a low oxygen content, it does not provide oxygen to the reflective layer 8a even when it is in contact with the reflective layer 8a (metal layer), so the connection resistance with the reflective layer 8a is low. The same effects as those of the first embodiment are obtained.

  In addition, since the first metal oxide layer 91 has a low oxygen content, oxygen is not provided to the reflective layer 8a even when it is in contact with the reflective layer 8a (metal layer), so that the surface of the reflective layer 8a is not easily oxidized. Therefore, there is an advantage that the reflectance of the surface of the reflective layer 8a can be prevented from being lowered.

[Other embodiments]
FIG. 8 is an explanatory diagram showing conditions for forming an ITO film constituting the pixel electrode in the method for manufacturing a liquid crystal device according to another embodiment of the present invention. In the above embodiment, when forming the first metal oxide layer 91 and the second metal oxide layer 92, as shown in FIG. 5, the target is placed between the first sputtering process ST1 and the second sputtering process ST2. Without change, the oxygen gas flow ratio in the second sputtering step ST2 was switched to a large value. Therefore, the pixel electrode 9a has a step junction structure in which the oxygen content changes steeply between the first metal oxide layer 91 and the second metal oxide layer 92.

  On the other hand, in this embodiment, as shown in FIG. 8, the oxygen gas flow rate ratio is continuously increased without changing the target during the sputtering process. In the case of such a configuration, although there is no clear division, in the pixel electrode 9a configured under such conditions that the first half of the sputtering process is the first sputtering process ST1 and the second half is the second sputtering process ST2, However, the lower layer side of the pixel electrode 9 a corresponds to the first metal oxide layer 91, and the upper layer side corresponds to the second metal oxide layer 92. Accordingly, even in this embodiment, even when a structure in which the metal layer and the pixel electrode 9a made of the metal oxide layer (ITO film) are in contact with each other is adopted, the connection resistance between the metal layer and the pixel electrode 9a is reduced, and the pixel electrode 9a Both sheet resistance can be reduced.

[Example of mounting on electronic devices]
An electronic apparatus to which the liquid crystal device 100 according to the above-described embodiment is applied will be described. FIG. 9 is a schematic configuration diagram of a projection type display device using the liquid crystal device 100 to which the present invention is applied. FIGS. 9A and 9B are respectively a projection type display using the transmission type liquid crystal device 100. FIG. 2 is an explanatory diagram of the device and an explanatory diagram of a projection display device using the reflective liquid crystal device 100.

(First example of projection display device)
The projection display device 110 shown in FIG. 9A is a so-called projection type projection display device that irradiates light onto a screen 111 provided on the viewer side and observes the light reflected by the screen 111. . The projection display device 110 includes a light source unit 130 including a light source 112, dichroic mirrors 113 and 114, liquid crystal light valves 115 to 117 (liquid crystal device 100), a projection optical system 118, a cross dichroic prism 119, and a relay. System 120.

  The light source 112 is composed of an ultrahigh pressure mercury lamp that supplies light including red light, green light, and blue light. The dichroic mirror 113 is configured to transmit red light from the light source 112 and reflect green light and blue light. The dichroic mirror 114 is configured to transmit blue light and reflect green light among the green light and the blue light reflected by the dichroic mirror 113. Thus, the dichroic mirrors 113 and 114 constitute a color separation optical system that separates the light emitted from the light source 112 into red light, green light, and blue light.

  Here, between the dichroic mirror 113 and the light source 112, an integrator 121 and a polarization conversion element 122 are sequentially arranged from the light source 112. The integrator 121 is configured to uniformize the illuminance distribution of the light emitted from the light source 112. Further, the polarization conversion element 122 is configured to change the light from the light source 112 into polarized light having a specific vibration direction such as s-polarized light.

  The liquid crystal light valve 115 is a transmissive liquid crystal device 100 that modulates red light transmitted through the dichroic mirror 113 and reflected by the reflection mirror 123 in accordance with an image signal. The liquid crystal light valve 115 includes a λ / 2 phase difference plate 115a, a first polarizing plate 115b, a liquid crystal panel 115c, and a second polarizing plate 115d. Here, the red light incident on the liquid crystal light valve 115 remains s-polarized light because the polarization of the light does not change even if it passes through the dichroic mirror 113.

  The λ / 2 phase difference plate 115a is an optical element that converts s-polarized light incident on the liquid crystal light valve 115 into p-polarized light. The first polarizing plate 115b is a polarizing plate that blocks s-polarized light and transmits p-polarized light. The liquid crystal panel 115c is configured to convert p-polarized light into s-polarized light (circularly polarized light or elliptically polarized light in the case of halftone) by modulation according to the image signal. Furthermore, the second polarizing plate 115d is a polarizing plate that blocks p-polarized light and transmits s-polarized light. Therefore, the liquid crystal light valve 115 is configured to modulate the red light in accordance with the image signal and to emit the modulated red light toward the cross dichroic prism 119.

  Note that the λ / 2 phase difference plate 115a and the first polarizing plate 115b are disposed in contact with a light-transmitting glass plate 115e that does not convert polarized light, and the λ / 2 phase difference plate 115a and the first polarizing plate 115b. It is possible to avoid distortion of 115b due to heat generation.

  The liquid crystal light valve 116 is a transmissive liquid crystal device 100 that modulates green light reflected by the dichroic mirror 114 after being reflected by the dichroic mirror 113 in accordance with an image signal. Similarly to the liquid crystal light valve 115, the liquid crystal light valve 116 includes a first polarizing plate 116b, a liquid crystal panel 116c, and a second polarizing plate 116d. Green light incident on the liquid crystal light valve 116 is s-polarized light that is reflected by the dichroic mirrors 113 and 114 and then incident. The first polarizing plate 116b is a polarizing plate that blocks p-polarized light and transmits s-polarized light. The liquid crystal panel 116c is configured to convert s-polarized light into p-polarized light (circularly polarized light or elliptically polarized light in the case of halftone) by modulation according to the image signal. The second polarizing plate 116d is a polarizing plate that blocks s-polarized light and transmits p-polarized light. Accordingly, the liquid crystal light valve 116 is configured to modulate green light in accordance with the image signal and to emit the modulated green light toward the cross dichroic prism 119.

  The liquid crystal light valve 117 is a transmissive liquid crystal device 100 that modulates blue light reflected by the dichroic mirror 113 and transmitted through the dichroic mirror 114 and then through the relay system 120 in accordance with an image signal. Similarly to the liquid crystal light valves 115 and 116, the liquid crystal light valve 117 includes a λ / 2 retardation film 117a, a first polarizing plate 117b, a liquid crystal panel 117c, and a second polarizing plate 117d. Here, since the blue light incident on the liquid crystal light valve 117 is reflected by the two reflecting mirrors 125a and 125b described later of the relay system 120 after being reflected by the dichroic mirror 113 and transmitted through the dichroic mirror 114, the s-polarized light is reflected. It has become.

  The λ / 2 phase difference plate 117a is an optical element that converts s-polarized light incident on the liquid crystal light valve 117 into p-polarized light. The first polarizing plate 117b is a polarizing plate that blocks s-polarized light and transmits p-polarized light. The liquid crystal panel 117c is configured to convert p-polarized light into s-polarized light (circularly polarized light or elliptically polarized light in the case of halftone) by modulation according to the image signal. Furthermore, the second polarizing plate 117d is a polarizing plate that blocks p-polarized light and transmits s-polarized light. Accordingly, the liquid crystal light valve 117 is configured to modulate blue light in accordance with an image signal and to emit the modulated blue light toward the cross dichroic prism 119. The λ / 2 phase difference plate 117a and the first polarizing plate 117b are disposed in contact with the glass plate 117e.

  The relay system 120 includes relay lenses 124a and 124b and reflection mirrors 125a and 125b. The relay lenses 124a and 124b are provided to prevent light loss due to a long blue light path. Here, the relay lens 124a is disposed between the dichroic mirror 114 and the reflection mirror 125a. The relay lens 124b is disposed between the reflection mirrors 125a and 125b. The reflection mirror 125a is disposed so as to reflect the blue light transmitted through the dichroic mirror 114 and emitted from the relay lens 124a toward the relay lens 124b. The reflection mirror 125b is arranged to reflect the blue light emitted from the relay lens 124b toward the liquid crystal light valve 117.

  The cross dichroic prism 119 is a color combining optical system in which two dichroic films 119a and 119b are arranged orthogonally in an X shape. The dichroic film 119a is a film that reflects blue light and transmits green light, and the dichroic film 119b is a film that reflects red light and transmits green light. Therefore, the cross dichroic prism 119 is configured to combine the red light, the green light, and the blue light modulated by the liquid crystal light valves 115 to 117 and emit the resultant light toward the projection optical system 118.

  Note that light incident on the cross dichroic prism 119 from the liquid crystal light valves 115 and 117 is s-polarized light, and light incident on the cross dichroic prism 119 from the liquid crystal light valve 116 is p-polarized light. Thus, by making the light incident on the cross dichroic prism 119 into different types of polarized light, the light incident from the liquid crystal light valves 115 to 117 in the cross dichroic prism 119 can be synthesized. Here, in general, the dichroic films 119a and 119b are excellent in the reflection characteristics of s-polarized light. Therefore, red light and blue light reflected by the dichroic films 119a and 119b are s-polarized light, and green light transmitted through the dichroic films 119a and 119b is p-polarized light. The projection optical system 118 has a projection lens (not shown) and is configured to project the light combined by the cross dichroic prism 119 onto the screen 111.

(Second example of projection display device)
In the projection display device 1000 shown in FIG. 9B, the light source unit 890 includes a polarization illumination device 800 in which a light source 810, an integrator lens 820, and a polarization conversion element 830 are arranged along the system optical axis L. . The light source unit 890 also reflects the S-polarized light beam emitted from the polarization illumination device 800 along the system optical axis L by the S-polarized light beam reflecting surface 841 and the S-polarized light beam of the polarized beam splitter 840. Of the light reflected from the reflecting surface 841, the dichroic mirror 842 that separates the blue light (B) component and the red light (R) component of the luminous flux after the blue light is separated are separated. And a dichroic mirror 843.

  The projection display device 1000 includes three reflective liquid crystal devices 100 (liquid crystal devices 100R, 100G, and 100B) on which each color light is incident, and the light source unit 890 includes three liquid crystal devices 100 (liquid crystal devices 100R). , 100G, 100B).

  In the projection display apparatus 1000, the light modulated by the three liquid crystal devices 100R, 100G, and 100B is synthesized by the dichroic mirrors 842 and 843 and the polarization beam splitter 840, and then the synthesized light is projected by the projection optical system 850. Is projected onto a projection target member such as a screen 860.

(Other projection display devices)
In addition, about a projection type display apparatus, you may comprise the LED light source etc. which radiate | emit the light of each color as a light source part, and supply each color light radiate | emitted from this LED light source to another liquid crystal device. .

(Other electronic devices)
As for the liquid crystal device 100 to which the present invention is applied, in addition to the electronic devices described above, mobile phones, personal digital assistants (PDAs), digital cameras, liquid crystal televisions, car navigation devices, video phones, POS terminals, You may use as a direct view type | mold display apparatus in electronic devices, such as an apparatus provided with the touch panel.

[Other electrical devices]
In the above-described embodiment, the liquid crystal device is exemplified as the electro-optical device. However, as long as a translucent substrate (electro-optical device substrate) is provided. The present invention is not limited to a liquid crystal device, but an organic electroluminescence device, a plasma display device, an electrophoretic display device, a device using electron emission (Field Emission Display), a method for manufacturing an electro-optical device such as DLP (Digital Light Processing). You may apply.

6b..Drain electrode (metal layer), 8a..Reflective layer (metal layer), 9a..Pixel electrode, 10..Element substrate, 20..Counter substrate, 50..Liquid crystal layer, 91..First metal Oxide layer, 92 ... Second metal oxide layer, 100 ... Liquid crystal device (electro-optical device), 110, 1000 ... Projection type display device

Claims (9)

A metal layer provided on one side of the substrate body for the element substrate;
A translucent pixel electrode in contact with the metal layer on the side opposite to the substrate body;
An electro-optical device comprising:
The pixel electrode is stacked on a light-transmitting first metal oxide layer in contact with the metal layer, on a side opposite to the side where the metal layer is located with respect to the first metal oxide layer. And a translucent second metal oxide layer having the same metal species as the metal oxide layer and having a larger oxygen content than the first metal oxide layer. Optical device.   The electro-optical device according to claim 1, wherein the second metal oxide layer has a sheet resistance smaller than that of the first metal oxide layer.   3. The electro-optical device according to claim 1, wherein the first metal oxide layer and the second metal oxide layer include an ITO (Indium Tin Oxide) film.   4. The electricity according to claim 1, wherein a layer in contact with the pixel electrode in the metal layer is made of a metal material mainly composed of aluminum, titanium, tantalum, or niobium. 5. Optical device. An interlayer insulating film is provided between the metal layer and the pixel electrode;
5. The electro-optical device according to claim 1, wherein the metal layer and the pixel electrode are in contact with each other in a contact hole provided in the interlayer insulating film.   5. The electro-optical device according to claim 1, wherein the metal layer is a reflective layer laminated on a side where the substrate body is located with respect to the pixel electrode. The element substrate is an element substrate for a liquid crystal device that holds a liquid crystal layer between a counter substrate disposed opposite to one surface side of the substrate body,
The electro-optical device according to claim 1, wherein the liquid crystal device element substrate is provided with an alignment film on a side where the counter substrate is located with respect to the pixel electrode. apparatus. A method for manufacturing an electro-optical device, comprising: a metal layer provided on one side of a substrate body for an element substrate; and a translucent pixel electrode in contact with the metal layer on the side opposite to the substrate body. There,
In forming the pixel electrode,
A first sputtering step of forming a transparent first metal oxide layer in contact with the metal layer by reactive sputtering;
A second metal oxide is formed on the first metal oxide layer by reactive sputtering using a target having the same composition as that of the first sputtering process and under a condition in which the oxygen gas flow rate ratio is increased from that of the first sputtering process. A second sputtering step of forming a layer;
A method for manufacturing an electro-optical device. A projection display device comprising the electro-optical device according to claim 7,
A light source unit that emits light supplied to the electro-optical device;
A projection optical system that projects light modulated by the electro-optical device;
A projection display device characterized by comprising:

Images