JP2012083514A - Liquid crystal device and projection type display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a liquid crystal device capable of preventing the lowering of the intensity of display light emitted from the periphery of an etching stopper layer even if the etching stopper layer is provided on a translucent electrode in constituting a translucent storage capacitor, and to provide a projection type display device with the liquid crystal device.SOLUTION: In a storage capacitor 55 of the liquid crystal device, a first electrode 51a, a dielectric film 52, and a second electrode 53a have translucency. An etching stopper layer 54a superposed on the end of the second electrode 53a across the whole circumference is provided at the interlayer between the first electrode 51a and the second electrode 53a. The etching stopper layer 54a has a refractive index similar to that of an ITO film constituting the first electrode 51a and the second electrode 53a. Therefore, no interference is generated between light without transmitting through the etching stopper layer 54a and light transmitting through the etching stopper layer 54a.

Description

  The present invention relates to a transmissive liquid crystal device and a projection display device including the liquid crystal device as a light valve.

  The transmissive liquid crystal device includes a translucent first substrate in which a plurality of pixels each including a pixel electrode, a pixel transistor, and a storage capacitor are provided on one side, and a translucent second substrate in which a common electrode is provided. Are bonded together by a sealing material, and a liquid crystal layer is held in a region surrounded by the sealing material between the first substrate and the second substrate. Such liquid crystal devices are used in electronic devices such as direct-view display devices and projection display devices. In the transmissive liquid crystal device, the pixel electrode and the common electrode are made of a light-transmitting conductive film such as an ITO (Indium Tin Oxide) film. In each pixel, a light shielding portion such as a wiring, a pixel transistor, and a storage capacitor is used. The enclosed area is an opening area through which display light is transmitted. Therefore, in order to display a bright image by increasing the amount of display light in the liquid crystal device, it is necessary to increase the ratio of the aperture area in the pixel (pixel aperture ratio). On the other hand, in order to increase the definition of an image or the like, it is necessary to reduce the pixel pitch and increase the number of pixels. However, if the pixel pitch is reduced, the pixel aperture ratio decreases.

  Therefore, a structure in which the first electrode, the dielectric film, and the second electrode constituting the storage capacitor are formed of a light-transmitting film, and the region where the storage capacitor is formed is a light-transmitting region, thereby increasing the pixel aperture ratio. Has been proposed (see Patent Documents 1 and 2).

JP 2010-117399 A Japanese Patent Application Laid-Open No. 11-52422

  However, the configurations described in Patent Documents 1 and 2 have problems as described below with reference to FIG. In order to form the storage capacitor 55x as shown in FIG. 12E, an ITO film 56 is formed on a base 40 such as an interlayer insulating film as shown in FIG. ), The ITO film 56 is patterned to form a first electrode 56a (lower electrode). Next, as shown in FIG. 12C, a translucent dielectric film 57 is formed. Next, as shown in FIG. 12D, an ITO film 58 is formed on the dielectric film 57, a resist mask 580 is formed, and after etching in this state, the resist mask 580 is removed. As a result, as shown in FIG. 12E, a storage capacitor 55x in which the first electrode 56a, the dielectric film 57, and the second electrode 58a (upper electrode) are sequentially stacked is formed. In such a manufacturing method, if dry etching is performed when the second electrode 58a is formed by patterning, the etching selectivity is low, so the dielectric film 57 is also etched, and the first electrode 56a is exposed. Therefore, at the end of the storage capacitor 55x, the first electrode 56a and the end of the second electrode 58a are separated only by the thin dielectric film 57. Therefore, the first electrode 56a is caused by conductive foreign matter. And the end of the second electrode 58a are easily short-circuited.

  Here, the inventor of the present application, like a storage capacitor 55x shown in FIG. 13A, forms a silicon oxide film between the dielectric film 57 and the ITO film 58 for forming the second electrode (see FIG. 12D). It is proposed that an etching stopper layer 59a made of With this configuration, when the ITO film 58 is etched to form the second electrode 58a, the first electrode 56a and the second electrode are formed at the end of the storage capacitor 55x even if the etching stopper layer 59a is slightly etched. Since the thick etching stopper layer 59a and the dielectric film 57 are interposed between the end portions of the 58a, it is possible to prevent the first electrode 56a and the end portions of the second electrode 58a from being short-circuited. Further, if a configuration in which an etching stopper layer 59a made of a silicon oxide film is provided between the first electrode 56a and the dielectric film 57 as in the storage capacitor 55x shown in FIG. Even when the body film 57 is etched, a thick etching stopper layer 59a is interposed between the first electrode 56a and the end of the second electrode 58a at the end of the storage capacitor 55x. And the end of the second electrode 58a can be prevented from being short-circuited.

  However, as shown in FIGS. 13A and 13B, when the etching stopper layer 59a made of a silicon oxide film is provided, the amount of display light emitted from the periphery of the etching stopper layer 59a is greatly increased for the following reason. The knowledge that it falls is obtained. That is, the light indicated by the arrow L11 in FIG. 13A is transmitted through the second electrode 58a, the dielectric film 57, and the first electrode 56a, whereas the light indicated by the arrow L12 in FIG. The light indicated by the arrow L13 in FIG. 13A passes through the etching stopper layer 59a and the dielectric film 57 through the second electrode 58a, the etching stopper layer 59a, the dielectric film 57, and the first electrode 56a. The light indicated by the arrow L21 in FIG. 13B is transmitted through the second electrode 58a, the dielectric film 57, and the first electrode 56a, whereas the light indicated by the arrow L22 in FIG. The light indicated by the arrow L23 in FIG. 13A passes through the second electrode 58a, the dielectric film 57, the etching stopper layer 59a, and the first electrode 56a, and passes through the etching stopper layer 59a. For this reason, light (light indicated by arrows L12, L13, L22, and L23) transmitted through a silicon oxide film (refractive index = 1.5 / etching stopper layer 59a) having a considerably lower refractive index than the ITO film, and ITO Interference occurs with light (light indicated by arrows L11 and L21) that does not pass through the silicon oxide film (etching stopper layer 59a) whose refractive index is considerably lower than that of the film, and is emitted from the periphery of the etching stopper layer 59a. That is, the amount of display light to be greatly reduced.

  In view of the above problems, an object of the present invention is to display a light emitted from the periphery of an etching stopper layer even when an etching stopper layer is provided for the light transmitting electrode in configuring a light transmitting storage capacitor. An object of the present invention is to provide a liquid crystal device capable of preventing a decrease in the amount of light and a projection display device including the liquid crystal device.

  In order to solve the above-described problems, a liquid crystal device according to the present invention includes a plurality of pixels each having an opening region through which light can be transmitted, a light-transmitting first electrode in the opening region, and a light-transmitting dielectric film. And ± 20% of the refractive index of the translucent conductive film constituting at least one of the first electrode and the second electrode, and the storage capacitor in which the translucent second electrode is sequentially laminated It is made of a light-transmitting film having a refractive index, and has an etching stopper layer that overlaps an end portion of the second electrode between the first electrode and the second electrode.

  In the present invention, an etching stopper layer that overlaps the end of the second electrode is provided between the first electrode and the second electrode. Therefore, even when overetching occurs during patterning of the second electrode, accumulation occurs. At the end of the capacitor, the etching stopper layer or the dielectric film is always interposed between the end of the first electrode and the second electrode, so that the end of the first electrode and the second electrode are short-circuited. Can be prevented. Here, the etching stopper layer is made of a translucent film having a refractive index of ± 20% with respect to the refractive index of the translucent conductive film constituting at least one of the first electrode and the second electrode. It has a refractive index equivalent to that of the electrode or the second electrode. For this reason, when light passes through the opening region, no interference occurs between the light that passes through the etching stopper layer and the light that does not pass through the etching stopper layer. Therefore, an etching stopper layer is provided for the second electrode. In addition, it is possible to prevent a decrease in the amount of display light emitted from the periphery of the etching stopper layer.

In the present invention, each of the first electrode and the second electrode is an ITO (Indium Tin Oxide) film, and the etching stopper layer is a silicon compound (SiO _x N _y , SiN: silicon nitride) film containing nitrogen. It is preferable that According to such a configuration, when the etching stopper layer is formed, there is an advantage that a silicon nitride film widely used in the field of liquid crystal devices may be used. In addition, the SiO _x N _y film or the SiN film has an advantage that the refractive index is stable as compared with the metal oxide.

  A liquid crystal device according to another embodiment of the present invention includes a plurality of pixels each having an opening region through which light can pass, a light-transmitting first electrode, a light-transmitting dielectric film, and a light transmitting device in the opening region. A storage capacitor in which conductive second electrodes are sequentially stacked, and a light-shielding etching stopper layer that overlaps an end portion of the second electrode between the first electrode and the second electrode. It is characterized by.

  In the present invention, an etching stopper layer that overlaps the end of the second electrode is provided between the first electrode and the second electrode. Therefore, even when overetching occurs during patterning of the second electrode, accumulation occurs. At the end of the capacitor, the etching stopper layer or the dielectric film is always interposed between the end of the first electrode and the second electrode, so that the end of the first electrode and the second electrode are short-circuited. Can be prevented. Here, since the etching stopper layer has a light shielding property, when light passes through the opening region, the light traveling toward the etching stopper layer is shielded by the etching stopper layer. For this reason, there is no interference between the light that passes through the etching stopper layer and the light that does not pass through the etching stopper layer in the vicinity of the etching stopper layer, thereby preventing a reduction in the amount of display light emitted from the periphery of the etching stopper layer. be able to.

  In the present invention, the etching stopper layer may be provided between the dielectric film and the second electrode. According to such a configuration, even if overetching occurs and the surface of the etching stopper layer is etched, a dielectric film is always provided between the first electrode and the end of the second electrode in addition to the etching stopper layer. Therefore, even if the etching stopper layer is made of either an insulating material or a conductive material, it is possible to prevent the first electrode and the end portion of the second electrode from being short-circuited.

  In the present invention, the etching stopper layer may be configured to be provided between the first electrode and the dielectric film.

  In the present invention, a translucent pixel electrode electrically connected to the second electrode is provided on the upper layer side of the second electrode, and the first electrode includes a plurality of adjacent pixels among the plurality of pixels. It is possible to adopt a configuration that is a capacitor line extending across the line.

  In this case, an interlayer insulating film having a flat surface is provided between the second electrode and the pixel electrode, and the second electrode and the pixel are disposed at a position overlapping the etching stopper layer on the interlayer insulating film. It is preferable that a contact hole for electrically connecting the electrode is formed. According to such a configuration, in the region where the etching stopper layer is provided, since the film thickness of the interlayer insulating film is thin by the film thickness of the etching stopper layer, the second electrode and the pixel electrode are connected to the interlayer insulating film. This contact hole can be formed shallower and easier than before. It is also an advantage that it can be easily formed.

  In the present invention, it is possible to adopt a configuration in which the second electrode is a pixel electrode, and the first electrode is a capacitance line extending across a plurality of adjacent pixels among the plurality of pixels. .

  In the present invention, it is preferable that the pixel includes a pixel transistor, and the storage capacitor is provided on an upper layer side of the pixel transistor.

  The liquid crystal device according to the present invention is used as, for example, a light valve of a projection display device or a direct view display device. When the liquid crystal device according to the present invention is used in a projection display device, the projection display device includes a light source unit that emits light supplied to the liquid crystal device, and projection optics that projects light modulated by the liquid crystal device. A system is provided.

It is explanatory drawing of the storage capacity provided in the liquid crystal device which concerns on Embodiment 1 of this invention. It is explanatory drawing of the storage capacity provided in the liquid crystal device which concerns on Embodiment 1 of this invention. It is a block diagram which shows the electric constitution of the liquid crystal device to which this invention is applied. It is explanatory drawing of the liquid crystal panel of the liquid crystal device to which this invention is applied. It is explanatory drawing of the specific structural example 1 of the liquid crystal device which concerns on Embodiment 1 of this invention. It is explanatory drawing of the pixel component in the specific structural example 1 of the liquid crystal device which concerns on Embodiment 1 of this invention. It is explanatory drawing of the specific structural example 2 of the liquid crystal device which concerns on Embodiment 1 of this invention. It is explanatory drawing of the pixel component in the specific structural example 2 of the liquid crystal device which concerns on Embodiment 1 of this invention. It is explanatory drawing of the specific structural example 1 of the liquid crystal device which concerns on Embodiment 2 of this invention. It is explanatory drawing of the specific structural example 2 of the liquid crystal device which concerns on Embodiment 2 of this invention. It is a schematic block diagram of the projection type display apparatus using the liquid crystal device to which this invention is applied. It is explanatory drawing of the liquid crystal device which concerns on a reference example. It is explanatory drawing of the liquid crystal device which concerns on another reference example.

  Embodiments of the present invention will be described with reference to the drawings. In the drawings to be referred to in the following description, the scales are different for each layer and each member so that each layer and each member have a size that can be recognized on the drawing.

[Embodiment 1]
(Configuration of storage capacity of liquid crystal device)
FIG. 1 is an explanatory diagram of a storage capacitor provided in the liquid crystal device according to Embodiment 1 of the present invention. The storage capacitor 55 shown in FIG. 1G is electrically connected in parallel to the liquid crystal capacitor in a first substrate (element substrate) of a transmissive liquid crystal device described later, and voltage fluctuations held in the liquid crystal capacitor are reduced. Suppress. In each pixel of the first substrate, a region surrounded by a light-shielding portion such as a light-shielding wiring or a pixel transistor is an opening region through which display light is transmitted. In this embodiment, the region is formed in the opening region. The storage capacitor 55 is constituted by the transparent film.

  More specifically, the storage capacitor 55 has a structure in which a first electrode 51a (lower electrode), a dielectric film 52, and a second electrode 53a (upper electrode) are sequentially stacked on a base layer 40 such as an interlayer insulating film. In this embodiment, a light-transmitting conductive film is used as the first electrode 51a, a light-transmitting dielectric film is used as the dielectric film 52, and a light-transmitting conductive film is used as the second electrode 53a. ing.

  In this embodiment, when the storage capacitor 55 is formed by the method described below with reference to FIGS. 1A to 1F, the second electrode 53a is interposed between the first electrode 51a and the second electrode 53a. An etching stopper layer 54a is provided to overlap the end portion of the electrode 53a. More specifically, among the layers between the first electrode 51a and the second electrode 53a, between the dielectric film 52 and the second electrode 53a, an etching stopper that overlaps the entire periphery of the end portion of the second electrode 53a. A layer 54a is provided.

  Here, the etching stopper layer 59a is a translucent insulating film having a refractive index of ± 20% with respect to the refractive index of the translucent conductive film constituting at least one of the first electrode 51a and the second electrode 53a. And has a refractive index equivalent to that of the first electrode 51a or the second electrode 53a. More specifically, in this embodiment, the first electrode 51a and the second electrode 53a are made of an ITO film, and the refractive index of the ITO film is 1.9. Accordingly, a light-transmitting insulating film having a refractive index of 1.52 to 2.28 (1.9 ± 20%) is used as the etching stopper layer 54a. As the light-transmitting insulating film, a silicon nitride film is used. (Refractive index = 2.0), silicon oxynitride film (refractive index = 1.6), and magnesium oxide (refractive index = 1.75). In the case of a metal oxide, since the refractive index varies depending on the oxygen content, a metal oxide film such as a niobium oxide film whose oxygen content is adjusted so that the refractive index falls within the range of 1.52 to 2.28. Also, it can be used as a translucent insulating film constituting the etching stopper layer 54a. Although the refractive index shifts depending on the wavelength of light, the etching stopper layer 59a only needs to have the same refractive index in the visible region as that of the ITO film.

  In this embodiment, a silicon nitride film is used as the etching stopper layer 54a. If the etching stopper layer 54a is a silicon nitride film, there is an advantage that a silicon nitride film widely used in the field of liquid crystal devices may be used when forming the etching stopper layer 54a. In addition, the silicon nitride film has an advantage that the refractive index is stable as compared with the metal oxide.

  The dielectric film 52 includes a silicon oxide film (dielectric constant = 3.9), a silicon nitride film (dielectric constant = 6.5), an aluminum oxide film (dielectric constant = 9), and a zirconium oxide film (dielectric constant = 31), a hafnium oxide film (dielectric constant = 41), a niobium oxide film (dielectric constant = 47) can be used. Of these dielectric films, if a dielectric film having a dielectric constant larger than that of the silicon oxide film is used as the dielectric film 52, a storage capacitor 55 having a large electrostatic capacity can be formed. In this embodiment, an aluminum oxide film is used as the dielectric film 52.

(Manufacturing method of liquid crystal device / manufacturing method of storage capacitor 55)
In the manufacturing method of the liquid crystal device, in order to manufacture the storage capacitor 55 shown in FIG. 1 (g), as shown in FIG. 1 (a), a first made of an ITO film is formed on a base 40 such as an interlayer insulating film. After forming the electrode-forming translucent conductive film 51, as shown in FIG. 1B, the first electrode-forming translucent conductive film 51 is patterned to form the first electrode 51a. Next, as shown in FIG. 1C, a translucent dielectric film 52 made of an aluminum oxide film or the like is formed on the upper layer side of the first electrode 51a.

  Next, as shown in FIG. 1 (d), after forming an etching stopper insulating film 54 made of a silicon nitride film or the like, the etching stopper insulating film 54 is patterned, and as shown in FIG. An etching stopper layer 54a is formed.

  Next, as shown in FIG. 1 (f), after forming a second electrode forming translucent conductive film 53 made of an ITO film, a resist mask 530 is formed on the second electrode forming translucent conductive film 53. After etching and etching in this state, the resist mask 530 is removed. As a result, as shown in FIG. 1G, a storage capacitor 55 in which the first electrode 51a, the dielectric film 52, and the second electrode 53a are sequentially stacked is formed. When dry etching is performed in the etching process of the second electrode forming translucent conductive film 53, the etching selectivity is low, and the surface of the etching stopper layer 54a is slightly etched. Nevertheless, a thick etching stopper layer 54a made of a silicon nitride film and a dielectric film 52 made of an aluminum oxide film remain between the end portions of the first electrode 56a and the second electrode 58a.

(Effect of this embodiment)
As described above, in the liquid crystal device of this embodiment, in the storage capacitor 55, the first electrode 51a, the dielectric film 52, and the second electrode 53a have translucency, and thus the storage capacitor 55 is formed. Light also passes through the area. Therefore, the area where the storage capacitor 55 is formed in the pixel can be used as the opening area. Therefore, even when the pixel pitch is reduced and the number of pixels is increased for the purpose of increasing the definition of the image, the pixel aperture ratio is high, so that the amount of display light can be increased and a bright image can be displayed. it can.

  In addition, an etching stopper layer 54a is provided between the first electrode 51a and the second electrode 53a between the dielectric film 52 and the second electrode 53a so as to overlap the entire edge of the second electrode 53a. It has been. Therefore, even if overetching occurs at the end of the storage capacitor 55 during dry etching, an insulating etching stopper layer 54a and an insulating layer are provided between the first electrode 51a and the end of the second electrode 53a. Since the conductive dielectric film 52 is interposed, it is possible to prevent the first electrode 51a and the end portion of the second electrode 53a from being short-circuited by the conductive foreign matter.

  Furthermore, in this embodiment, the etching stopper layer 54a is made of an etching stopper insulating film 59 (silicon nitride film) having a refractive index equivalent to that of the ITO film constituting the first electrode 51a and the second electrode 53a. For this reason, it is possible to prevent the amount of display light emitted from the periphery of the etching stopper layer 54a from being significantly reduced due to interference of display light. That is, the light indicated by the arrow L11 in FIG. 1G is transmitted through the second electrode 53a, the dielectric film 52, and the first electrode 51a, whereas the light indicated by the arrow L12 in FIG. The light indicated by the arrow L13 in FIG. 1G passes through the etching stopper layer 54a and the dielectric film 52 through the second electrode 53a, the etching stopper layer 54a, the dielectric film 52, and the first electrode 51a. Still, since the second electrode 53a, the first electrode 51a, and the etching stopper layer 54a have the same refractive index, interference occurs between the light that does not pass through the etching stopper layer 54a and the light that passes through the etching stopper layer 54a. do not do. Therefore, even if the etching stopper layer 54a is provided for the second electrode 53a, it is possible to prevent a decrease in the amount of display light emitted from the periphery of the etching stopper layer 54a.

  In this embodiment, since the etching stopper layer 54a is provided between the dielectric film 52 and the second electrode 53a, the end of the storage capacitor 51 is overetched during dry etching. In addition to the etching stopper layer 54a, the dielectric film 52 always remains between the first electrode 51a and the end of the second electrode 53a. Therefore, the etching stopper layer 54a has an advantage that it may be either an insulating material or a conductive material.

  In this embodiment, in order to make the refractive index of the etching stopper layer 54a equal to the refractive index of the first electrode 51a or the second electrode 53a, as a result of various evaluations, the refractive index of the etching stopper layer 54a is changed to the first electrode 51a or Although the refractive index of the second electrode 53a is set to ± 20%, the difference in refractive index is small within this range, so that the influence of light interference can be kept low. On the other hand, when the refractive index of the etching stopper layer 54a is less than 80% or more than 120% of the refractive index of the first electrode 51a or the second electrode 53a, the influence of light interference is suppressed as a result of various evaluations. The result is that it is not possible.

[Embodiment 2]
(Configuration of storage capacity of liquid crystal device)
FIG. 2 is an explanatory diagram of a storage capacitor provided in the liquid crystal device according to Embodiment 2 of the present invention. The storage capacitor 55 shown in FIG. 2G is also electrically connected in parallel to the liquid crystal capacitor in the first substrate (element substrate) of the transmission type liquid crystal device described later, as in the first embodiment. The voltage fluctuation held in In forming this storage capacitor 55 in a pixel, in this embodiment as well, a light-transmitting conductive film is used as the first electrode 51a and a light-transmitting dielectric film is used as the dielectric film 52, as in the first embodiment. A translucent conductive film is used as the second electrode 53a. Also in this embodiment, as in the first embodiment, an insulating etching stopper layer 54a is provided between the first electrode 51a and the second electrode 53a so as to overlap the end portion of the second electrode 53a.

  In this embodiment, among the layers between the first electrode 51a and the second electrode 53a, between the first electrode 51a and the dielectric film 52, the etching stopper layer 54a that overlaps the entire periphery of the end portion of the second electrode 53a. Is provided. Here, the etching stopper layer 54a is made of a translucent film having a refractive index of ± 20% with respect to the refractive index of the translucent conductive film constituting at least one of the first electrode 51a and the second electrode 53a. The refractive index is the same as that of the first electrode 51a or the second electrode 53a. More specifically, also in this embodiment, as in Embodiment 1, the first electrode 51a and the second electrode 53a are made of an ITO film, and the refractive index of the ITO film is 1.9. Therefore, a light-transmitting insulating film having a refractive index of 1.52 to 2.28 (1.9 ± 20%) is used as the etching stopper layer 54a. An insulating film is mentioned. In this embodiment, a silicon nitride film is used as the etching stopper layer 54a. As the dielectric film 52, the above-described dielectric film can be used. In this embodiment, an insulating film having a high dielectric constant such as an aluminum oxide film is used.

(Method for manufacturing liquid crystal device / method for manufacturing storage capacitor 55)
In the manufacturing method of the liquid crystal device, in order to manufacture the storage capacitor 55 shown in FIG. 2G, as shown in FIG. After forming the electrode-forming translucent conductive film 51, as shown in FIG. 2B, the first electrode-forming translucent conductive film 51 is patterned to form the first electrode 51a.

  Next, as shown in FIG. 2C, after forming the etching stopper insulating film 54 made of a silicon nitride film or the like, the etching stopper insulating film 54 is patterned, and as shown in FIG. An etching stopper layer 54a is formed.

  Next, as shown in FIG. 2E, a translucent dielectric film 52 made of an aluminum oxide film or the like is formed. Next, as shown in FIG. 2 (f), a second electrode forming translucent conductive film 53 made of an ITO film is formed, and then a resist mask 530 is formed on the second electrode forming translucent conductive film 53. After etching and etching in this state, the resist mask 530 is removed. As a result, as shown in FIG. 2G, a storage capacitor 55 in which the first electrode 51a, the dielectric film 52, and the second electrode 53a are sequentially stacked is formed. When dry etching is performed to etch the second electrode-forming translucent conductive film 53, the etching selectivity is low, so that the portion of the dielectric film 52 exposed from the second electrode 53a and the etching stopper layer 54a The surface is etched. Nevertheless, the thick etching stopper layer 54a remains between the first electrode 51a and the end of the second electrode 53a.

(Effect of this embodiment)
As described above, also in the liquid crystal device of this embodiment, as in Embodiment 1, in the storage capacitor 55, the first electrode 51a, the dielectric film 52, and the second electrode 53a have translucency. Light also passes through the region where the storage capacitor 55 is formed. Therefore, the region where the storage capacitor 55 is formed can be used as the opening region. Therefore, even when the pixel pitch is reduced and the number of pixels is increased for the purpose of increasing the definition of the image, the pixel aperture ratio is high, so that the amount of display light can be increased and a bright image can be displayed. it can.

  In addition, an etching stopper layer 54a is provided between the first electrode 51a and the second electrode 53a between the first electrode 51a and the dielectric film 52 so as to overlap the entire periphery of the end of the second electrode 53a. It has been. For this reason, the etching stopper layer 54a is interposed between the first electrode 51a and the end of the second electrode 53a at the end of the storage capacitor 51 even when overetching occurs during dry etching. It is possible to prevent 51a and the end portion of the second electrode 53a from being short-circuited by a conductive foreign matter.

  Furthermore, in this embodiment, the etching stopper layer 54a is made of an etching stopper insulating film 59 (silicon nitride film) having a refractive index equivalent to that of the ITO film constituting the first electrode 51a and the second electrode 53a. For this reason, it can prevent that the emitted light quantity of the display light radiate | emitted from the etching stopper layer 54a periphery falls significantly due to the interference of display light. That is, the light indicated by the arrow L21 in FIG. 2G passes through the second electrode 53a, the dielectric film 52, and the first electrode 51a, whereas the light indicated by the arrow L22 in FIG. The light indicated by the arrow L23 in FIG. 2G passes through the dielectric film 54 and the etching stopper layer 54a through the second electrode 53a, the dielectric film 52, the etching stopper layer 54a, and the first electrode 51a. Still, since the second electrode 53a, the first electrode 51a, and the etching stopper layer 54a have the same refractive index, interference occurs between the light that does not pass through the etching stopper layer 54a and the light that passes through the etching stopper layer 54a. do not do. Therefore, even if the etching stopper layer 54a is provided for the second electrode 53a, it is possible to prevent a decrease in the amount of display light emitted from the periphery of the etching stopper layer 54a.

  In this embodiment, since the etching stopper layer 54a is provided between the first electrode 51a and the dielectric film 52, if overetching occurs at the end of the storage capacitor 51 during dry etching, the dielectric The body film 52 is removed. Therefore, it is necessary to use an insulating material for the etching stopper layer 54a.

  In this embodiment, in order to make the refractive index of the etching stopper layer 54a equal to the refractive index of the first electrode 51a or the second electrode 53a, as a result of various evaluations, the refractive index of the etching stopper layer 54a is changed to the first electrode 51a or Although the refractive index of the second electrode 53a is set to ± 20%, the difference in refractive index is small within this range, so that the influence of light interference can be kept low. On the other hand, when the refractive index of the etching stopper layer 54a is less than 80% or more than 120% of the refractive index of the first electrode 51a or the second electrode 53a, the influence of light interference is suppressed as a result of various evaluations. The result is that it is not possible.

[Embodiment 3]
The storage capacitor provided in the liquid crystal device according to Embodiment 3 of the present invention basically has the same configuration as that of the storage capacitor 55 described with reference to FIG. 1, and constitutes an etching stopper layer 54a. Only the material to be different is different. That is, also in this embodiment, as shown in FIG. 1, in the storage capacitor 55, a light-transmitting conductive film (ITO film) is used as the first electrode 51a and the light-transmitting film as the dielectric film 52, as in the first embodiment. A conductive dielectric film is used, and a translucent conductive film (ITO film) is used as the second electrode 53a. As the dielectric film 52, the above-described dielectric film can be used. In this embodiment, an insulating film having a high dielectric constant such as an aluminum oxide film is used.

  Also in this embodiment, as in the first embodiment, an etching stopper layer 54a is provided between the dielectric film 52 and the second electrode 53a so as to overlap the end portion of the second electrode 53a.

  Here, the etching stopper layer 59a is formed of a light-shielding film having light absorption properties, such as a metal film such as molybdenum, titanium, or tantalum, an oxide film such as molybdenum, titanium, or tantalum, or a silicide film such as molybdenum, titanium, or tantalum. Note that the storage capacitor 55 of the present embodiment can be formed by the method described with reference to FIG.

  In the liquid crystal device including the storage capacitor 55 having such a configuration, the storage capacitor 55 is formed in the storage capacitor 55 because the first electrode 51a, the dielectric film 52, and the second electrode 53a have translucency. Light is also transmitted through the area. Therefore, the region where the storage capacitor 55 is formed can be used as the opening region. Therefore, even when the pixel pitch is reduced and the number of pixels is increased for the purpose of increasing the definition of the image, the pixel aperture ratio is high, so that the amount of display light can be increased and a bright image can be displayed. it can. In addition, an etching stopper layer 54a is provided between the first electrode 51a and the second electrode 53a between the dielectric film 52 and the second electrode 53a so as to overlap the end of the second electrode 53a over the entire circumference. Yes. For this reason, at the end of the storage capacitor 51, even if overetching occurs during dry etching, at least the dielectric film 72 is interposed between the end of the first electrode 51a and the second electrode 53a. It is possible to prevent the electrode 51a and the end portion of the second electrode 53a from being short-circuited by the conductive foreign matter.

  Furthermore, in this embodiment, since the etching stopper layer 54a has a light shielding property, light traveling toward the etching stopper layer 54a is shielded by the etching stopper layer 54a. Therefore, in the vicinity of the etching stopper layer 54a, there is no interference between the light that passes through the etching stopper layer 54a and the light that does not pass through the etching stopper layer 54a. Therefore, the amount of display light emitted from the periphery of the etching stopper layer 54a A decrease can be prevented. Further, since the etching stopper layer 54a has a light absorption property, light is not reflected by the etching stopper layer 54a to be stray light.

  In this embodiment, since the etching stopper layer 54a is provided between the dielectric film 52 and the second electrode 53a, the end of the storage capacitor 51 is overetched during dry etching. In addition to the etching stopper layer 54a, the dielectric film 52 also remains between the end portions of the first electrode 51a and the second electrode 53a. Therefore, the etching stopper layer 54a has an advantage that it may be either an insulating material or a conductive material.

[Embodiment 4]
The storage capacitor provided in the liquid crystal device according to the fourth embodiment of the present invention basically has the same configuration as that of the storage capacitor 55 described with reference to FIG. 2, and constitutes an etching stopper layer 54a. Only the material to be different is different. That is, as shown in FIG. 2, in this embodiment as well, in the storage capacitor 55, a transparent conductive film (ITO film) is used as the first electrode 51 a and the transparent film is used as the dielectric film 52, as in the first embodiment. A conductive dielectric film is used, and a translucent conductive film (ITO film) is used as the second electrode 53a. As the dielectric film 52, the above-described dielectric film can be used. In this embodiment, an insulating film having a high dielectric constant such as an aluminum oxide film is used.

  Also in this embodiment, as in the second embodiment, an etching stopper layer 54a is provided between the first electrode 51a and the dielectric film 52 so as to overlap the end portion of the second electrode 53a.

  Here, the etching stopper layer 59a is made of a light shielding film having light absorption and insulation, such as an oxide film of molybdenum, titanium, or tantalum. Note that the storage capacitor 55 of this embodiment can be formed by the method described with reference to FIG.

  In the liquid crystal device including the storage capacitor 55 having such a configuration, the storage capacitor 55 is formed in the storage capacitor 55 because the first electrode 51a, the dielectric film 52, and the second electrode 53a have translucency. Light is also transmitted through the area. Therefore, the region where the storage capacitor 55 is formed can be used as the opening region. Therefore, even when the pixel pitch is reduced and the number of pixels is increased for the purpose of increasing the definition of the image, the pixel aperture ratio is high, so that the amount of display light can be increased and a bright image can be displayed. it can. In addition, an etching stopper layer 54a is provided between the first electrode 51a and the second electrode 53a between the first electrode 51a and the dielectric film 52 so as to overlap the entire periphery of the end of the second electrode 53a. It has been. For this reason, the insulating etching stopper layer 54a is thickly interposed between the end portions of the first electrode 51a and the second electrode 53a at the end portion of the storage capacitor 51 even when overetching occurs during dry etching. Further, it is possible to prevent the first electrode 51a and the end portion of the second electrode 53a from being short-circuited by the conductive foreign matter.

  Furthermore, in this embodiment, since the etching stopper layer 54a has a light shielding property, light traveling toward the etching stopper layer 54a is shielded by the etching stopper layer 54a. Therefore, in the vicinity of the etching stopper layer 54a, there is no interference between the light that passes through the etching stopper layer 54a and the light that does not pass through the etching stopper layer 54a. Therefore, the amount of display light emitted from the periphery of the etching stopper layer 54a A decrease can be prevented. Further, since the etching stopper layer 54a has a light absorption property, light is not reflected by the etching stopper layer 54a to be stray light.

  In this embodiment, since the etching stopper layer 54a is provided between the first electrode 51a and the dielectric film 52, if overetching occurs at the end of the storage capacitor 51 during dry etching, the dielectric The body film 52 is removed. Therefore, it is necessary to use an insulating material for the etching stopper layer 54a.

[Specific Configuration Example 1 of Liquid Crystal Device According to Embodiment 1]
(overall structure)
FIG. 3 is a block diagram showing an electrical configuration of a liquid crystal device to which the present invention is applied. In FIG. 3, a liquid crystal device 100 has a liquid crystal panel 100p in a TN (Twisted Nematic) mode or a VA (Vertical Alignment) mode, and the liquid crystal panel 100p has a plurality of pixels 100a arranged in a matrix in the central region. The pixel area 10a (image display area) is provided. In the liquid crystal panel 100p, on the first substrate 10 (see FIG. 4 and the like), which will be described later, a plurality of data lines 6a and a plurality of scanning lines 3a extend vertically and horizontally inside the pixel region 10a. A pixel 100a is configured at a corresponding position. In each of the plurality of pixels 100a, a pixel transistor 30 made of a field effect transistor and a pixel electrode 9a described later are formed. The data line 6 a is electrically connected to the source of the pixel transistor 30, the scanning line 3 a is electrically connected to the gate of the pixel transistor 30, and the pixel electrode 9 a is electrically connected to the drain of the pixel transistor 30. Has been.

  In the first substrate 10, a scanning line driving circuit 104 and a data line driving circuit 101 are provided on the outer peripheral side of the pixel region 10a. The data line driving circuit 101 is electrically connected to each data line 6a, and sequentially supplies the image signal supplied from the image processing circuit to each data line 6a. The scanning line driving circuit 104 is electrically connected to each scanning line 3a, and sequentially supplies a scanning signal to each scanning line 3a.

  In each pixel 100a, the pixel electrode 9a is opposed to a common electrode formed on a second substrate 20 (see FIG. 4 and the like), which will be described later, via a liquid crystal layer, and constitutes a liquid crystal capacitor 50a. Further, a storage capacitor 55 is added to each pixel 100a in parallel with the liquid crystal capacitor 50a in order to prevent fluctuation of the image signal held in the liquid crystal capacitor 50a. In this embodiment, in order to form the storage capacitor 55, the capacitor line 5b extending in parallel with the scanning line 3a is formed across the plurality of pixels 100a, and the common potential Vcom is applied to the capacitor line 5b. It is electrically connected to the common potential line 5c.

(Configuration of the liquid crystal panel 100p and the first substrate 10)
FIG. 4 is an explanatory diagram of the liquid crystal panel 100p of the liquid crystal device 100 to which the present invention is applied. FIGS. 4A and 4B are respectively components of the liquid crystal panel 100p of the liquid crystal device 100 to which the present invention is applied. A plan view seen from the counter substrate side, and a HH ′ cross-sectional view thereof. As shown in FIGS. 4A and 4B, in the liquid crystal panel 100p, the first substrate 10 and the second substrate 20 are bonded to each other with a sealing material 107 through a predetermined gap. The two substrates 20 are provided in a frame shape along the outer edge. The sealing material 107 is an adhesive made of a photo-curing resin, a thermosetting resin, or the like, and is mixed with a gap material such as glass fiber or glass beads for setting the distance between both substrates to a predetermined value.

  In the liquid crystal panel 100p having such a configuration, the first substrate 10 and the second substrate 20 are both square, and the pixel area 10a described with reference to FIG. 3 is provided as a square area in the approximate center of the liquid crystal panel 100p. It has been. Corresponding to this shape, the sealing material 107 is also provided in a substantially rectangular shape, and a substantially rectangular peripheral region 10b is provided in a frame shape between the inner peripheral edge of the sealing material 107 and the outer peripheral edge of the pixel region 10a. . In the first substrate 10, the data line driving circuit 101 and the plurality of terminals 102 are formed along one side of the first substrate 10 outside the pixel region 10 a, and scanning is performed along another side adjacent to the one side. A line driving circuit 104 is formed.

  As will be described in detail later, in the substrate surface on one side of the first substrate 10, the pixel transistor 10 described with reference to FIG. 3 and the pixel electrode 9a electrically connected to the pixel transistor 30 are provided in the pixel region 10a. An alignment film 16 is formed on the upper layer side of the pixel electrode 9a.

  In addition, on the substrate surface on one side of the first substrate 10, a dummy pixel electrode 9b (see FIG. 4B) that is formed simultaneously with the pixel electrode 9a is formed in the peripheral region 10b. Here, with respect to the dummy pixel electrode 9b, a configuration in which the dummy pixel transistor is electrically connected, a configuration in which the dummy pixel transistor is not provided, a configuration in which the dummy pixel electrode is directly connected to the wiring, or a potential is applied. A configuration with no float is adopted. The dummy pixel electrode 9b compresses the difference in height between the pixel region 10a and the peripheral region 10b when the surface of the first substrate 10 on which the alignment film 16 is formed is flattened by polishing. This contributes to flattening the surface to be formed. Further, if the dummy pixel electrode 9b is set to a predetermined potential, it is possible to prevent the disorder of the alignment of the liquid crystal molecules at the outer peripheral side end of the pixel region 10a.

  The second substrate 20 has a translucent substrate body 20w such as a quartz substrate or a glass substrate. In the second substrate 20, a common electrode 21 is formed on one substrate surface facing the first substrate 10, and an alignment film 26 is formed on the common electrode 21. The common electrode 21 is formed across the plurality of pixels 100a as substantially the entire surface of the second substrate 20 or as a plurality of strip electrodes. In addition, a light shielding layer 108 is formed on the lower layer side of the common electrode 21 on one substrate surface of the second substrate 20 facing the first substrate 10. In this embodiment, the light shielding layer 108 is formed in a frame shape extending along the outer peripheral edge of the pixel region 10a. Here, the outer peripheral edge of the light shielding layer 108 is located with a gap between the inner peripheral edge of the sealing material 107 and the light shielding layer 108 and the sealing material 107 do not overlap. In the second substrate 20, the light shielding layer 108 may be formed in a region that overlaps with a region sandwiched between adjacent pixel electrodes 9a.

  In the liquid crystal panel 100p configured as described above, the first substrate 10 is electrically connected between the first substrate 10 and the second substrate 20 in a region overlapping the corner portion of the second substrate 20 outside the sealant 107. An inter-substrate conduction electrode 109 for conducting is formed, and the inter-substrate conduction electrode 109 is electrically connected to the common potential line 5c. Further, an inter-substrate conductive material 109a such as a so-called silver point is disposed at a position overlapping with the inter-substrate conductive electrode 109, and the common potential line 5c of the first substrate 10 and the common electrode 21 of the second substrate 20 are Are electrically connected via the inter-substrate conductive material 109a. For this reason, the common potential Vcom is applied to the common electrode 21 from the first substrate 10 side.

  In the liquid crystal device 100 having such a configuration, when the substrate body 10w of the first substrate 10, the substrate body 20w of the second substrate 20, the pixel electrode 9a, and the common electrode 21 are formed of a translucent conductive film, a transmissive liquid crystal device is configured. can do. In the case of such a transmissive liquid crystal device 100, the light incident from one of the first substrate 10 and the second substrate 20 is modulated while being transmitted through the other substrate, and an image is displayed. To do.

  The liquid crystal device 100 can be used as a color display device of an electronic device such as a mobile computer or a mobile phone. In this case, a color filter (not shown) and a protective film are formed on the second substrate 20. Further, in the liquid crystal device 100, the polarizing film, the retardation film, the polarizing plate, etc. have a predetermined orientation with respect to the liquid crystal panel 100p according to the type of the liquid crystal layer 50 to be used and the normally white mode / normally black mode. Placed in. Furthermore, the liquid crystal device 100 can be used as a light valve for RGB in a projection display device (liquid crystal projector) described later. In this case, each color liquid crystal device 100 for RGB receives light of each color separated through RGB color separation dichroic mirrors as projection light, so that no color filter is formed.

  In this embodiment, the liquid crystal device 100 is a transmissive liquid crystal device used as an RGB light valve in a projection display device described later, and light incident from the second substrate 20 is transmitted through the first substrate 10. The explanation will be focused on the case of emission. Further, in this embodiment, the liquid crystal device 100 will be described focusing on the case where the liquid crystal layer 50 includes a VA mode liquid crystal panel 100p using a nematic liquid crystal compound having a negative dielectric anisotropy.

(Specific pixel configuration)
FIG. 5 is an explanatory diagram of a specific configuration example 1 of the liquid crystal device 100 according to the first embodiment of the present invention. FIGS. 5A and 5B are planes of adjacent pixels on the first substrate 10, respectively. It is sectional drawing when the 1st board | substrate 10 is cut | disconnected in the position equivalent to a figure and the F1-F1 'line of Fig.5 (a). FIG. 6 is an explanatory diagram of pixel components in the specific configuration example 1 of the liquid crystal device 100 according to Embodiment 1 of the present invention, and FIGS. 6 (a), (b), (c), and (d) , An explanatory diagram showing the formation region of the storage capacitor 55 by a diagonal line rising to the right, an explanatory diagram showing a formation region of the first electrode 51a (capacitor line 5b) by a diagonal line rising to the right, and the formation of the second electrode 53a by a diagonal line rising to the right It is explanatory drawing which shows an area | region, and explanatory drawing which shows the formation area of the etching stopper layer 54a by the oblique line which goes up to the right. In FIGS. 5A and 6, the semiconductor layer 1a is indicated by a thin and short dotted line, the scanning line 3a is indicated by a thin solid line, the data line 6a and a thin film formed simultaneously with it are indicated by a thin one-dot chain line, The line 5b is indicated by a thick solid line, the pixel electrode 9a is indicated by a thick and long broken line, the second electrode 53a is indicated by a thin and long broken line, and the etching stopper layer 54a is indicated by a thick two-dot chain line.

  In the liquid crystal device 100 of the present embodiment, among the components described with reference to FIG. 1, the first electrode 51a corresponds to the capacitor line 5b. 5 and 6, the second electrode is denoted by reference numeral 53a, the dielectric film is denoted by reference numeral 52, and the etching stopper layer is illustrated so that the correspondence with the embodiment shown in FIG. 1 can be easily understood. Is described with reference numeral 54a.

  As shown in FIG. 5A, a rectangular pixel electrode 9a is formed on each of the plurality of pixels 100a on the first substrate 10, and data along the vertical and horizontal boundaries of each pixel electrode 9a is provided. Lines 6a and scanning lines 3a are formed. Each of the data line 6a and the scanning line 3a extends linearly, and a pixel transistor 30 is formed in a region where the data line 6a and the scanning line 3a intersect. The semiconductor layer 1 constituting the pixel transistor 30 extends along the data line 6a at a position overlapping the data line 6a, and then bends so as to extend along the scanning line 3a from the middle. In this embodiment, an area surrounded by the data line 6a, the scanning line 3a, the pixel transistor 30 and the like is an opening area 100c through which light can be transmitted.

  In the first substrate 10, the capacitor line 5 b extends along the scanning line 3 a, and the capacitor line 5 b extends across a plurality of adjacent pixels 100 a. In this embodiment, the capacitor line 5 b is used as the first electrode 51 a of the storage capacitor 55. Therefore, the entire capacitor line 5b is composed of an ITO film (translucent conductive film). However, a configuration in which the capacitor line 5b is formed of a metal wiring and an ITO film electrically connected to the metal wiring is provided in each pixel 100a as the first electrode 51a may be employed.

  5 and 6, the first substrate 10 has a pixel electrode 9a and a pixel switching pixel on the surface (one surface side) of the translucent substrate body 10w such as a quartz substrate or a glass substrate on the liquid crystal layer 50 side. The transistor 30, the storage capacitor 55, the alignment film 16, and the like are configured as described below.

  First, in the first substrate 10, a pixel transistor 30 including the semiconductor layer 1a is formed in each of the plurality of pixels 100a. The semiconductor layer 1a includes a channel region 1g, a source region 1b, and a drain region 1c that are opposed to the gate electrode 3c, which is a part of the scanning line 3a, via the translucent gate insulating layer 2. The source region 1b and the drain region 1c each have a low concentration region and a high concentration region. The semiconductor layer 1a is composed of, for example, a polycrystalline silicon film or the like formed on the substrate body 10w through a light-transmitting base insulating film 12, and the gate insulating layer 2 is silicon oxide formed by a CVD method or the like. It consists of a film or a silicon nitride film. The gate insulating layer 2 may have a two-layer structure of a silicon oxide film obtained by thermally oxidizing the semiconductor layer 1a and a silicon oxide film or a silicon nitride film formed by a CVD method or the like. For the scanning line 3a, a conductive polysilicon film, a metal silicide film, or a metal film is used.

  A translucent interlayer insulating film 41 made of a silicon oxide film or the like is formed on the upper layer side of the scanning line 3a, and a data line 6a and a drain electrode 6b are formed on the upper layer of the interlayer insulating film 41. Data line 6 a is electrically connected to source region 1 b through contact hole 7 a that penetrates interlayer insulating film 41 and gate insulating layer 2, and drain electrode 6 b penetrates interlayer insulating film 41 and gate insulating layer 2. It is electrically connected to the drain region 1c through the contact hole 7b. The data line 6a and the drain electrode 6b are made of a conductive polysilicon film, a metal silicide film, a metal film, or the like.

(Configuration of storage capacity 55 etc.)
A light-transmitting interlayer insulating film 42 made of a silicon oxide film or the like is formed on the upper side of the data line 6a and the drain electrode 6b. A capacitor line 5b is formed on the surface of the interlayer insulating film 42 as the first electrode 51a shown in FIG. 1, and the capacitor line 5b (first electrode 51a) is made of an ITO film (translucent conductive film). Therefore, the interlayer insulating film 42 corresponds to the base 40 shown in FIG. The surface of the interlayer insulating film 42 is flattened by polishing.

  A dielectric film 52 is formed on the upper layer side of the capacitor line 5b, and a second electrode 53a is formed on the surface of the dielectric film 52. In the present embodiment, the second electrode 53a is formed in a quadrangular shape at a position overlapping the capacitor line 5b.

  Here, the dielectric film 52 is made of the light-transmitting dielectric film described in the first embodiment. In this embodiment, an aluminum oxide film is used as the dielectric film 52. The second electrode 53a is made of an ITO film (translucent conductive film).

  Thus, in this embodiment, the storage capacitor 55 is constituted by the capacitor line 5b (first electrode 51a) made of an ITO film, the translucent dielectric film 52 made of an aluminum oxide film, and the second electrode 53a made of an ITO film. Is configured.

  In the first substrate 10, etching between the dielectric film 52 and the second electrode 53 a that overlaps the entire periphery of the end of the second electrode 53 a among the layers between the capacitor line 5 b and the second electrode 53 a. A stopper layer 54a is provided. Here, as described with reference to FIG. 1, the etching stopper layer 54a has a refractive index of a light-transmitting conductive film constituting at least one of the capacitor line 5b (first electrode 51a) and the second electrode 53a. In contrast, it is made of a translucent film having a refractive index of ± 20%, and has a refractive index equivalent to that of the capacitor line 5b or the second electrode 53a. More specifically, also in the present embodiment, as in the first embodiment, the capacitor line 5b and the second electrode 53a are made of an ITO film, and the refractive index of the ITO film is 1.9. Therefore, a light-transmitting insulating film having a refractive index of 1.52 to 2.28 (1.9 ± 20%) is used as the etching stopper layer 54a. An insulating film is mentioned. In this embodiment, a silicon nitride film is used as the etching stopper layer 54a. In the present embodiment, the second electrode 53a partially protrudes from the capacitor line 3b, but ends corresponding to substantially three sides overlap the capacitor line 3b.

  In this embodiment, the second electrode 53a is formed in the contact hole 7g penetrating the dielectric film 52 and the interlayer insulating film 42 in a region where the capacitor line 5b is not formed, such as a region where a notch is formed in the capacitor line 5b. Is electrically connected to the drain electrode 6b.

  A translucent interlayer insulating film 43 made of a silicon oxide film or the like is formed on the upper layer side of the second electrode 53a, and a translucent pixel electrode 9a is formed on the surface of the interlayer insulating film 43. The pixel electrode 9a is made of an ITO film (translucent conductive film). The pixel electrode 9a is electrically connected to the second electrode 53a via a contact hole 7f penetrating the interlayer insulating film 43, and the pixel electrode 9a is connected to the drain region 1c via the second electrode 53a and the drain electrode 6b. Is electrically connected. In this embodiment, the surface of the interlayer insulating film 43 is flattened by polishing.

  Here, the contact hole 7f is formed at a position overlapping with the etching stopper layer 54a, and the thickness of the interlayer insulating film 43 is thinner in the region overlapping with the etching stopper layer 54a than in other regions. That is, since the surface of the interlayer insulating film 43 is polished after being formed by a CVD method or the like, the thickness of the interlayer insulating film 43 is larger in the region overlapping the etching stopper layer 54a than in other regions. thin.

An alignment film 16 is formed on the surface of the pixel electrode 9a. The alignment film 16 is made of a resin film such as polyimide or an oblique deposition film such as a silicon oxide film. In this embodiment, the alignment film 16 is an obliquely deposited film of SiO _x (x <2), SiO ₂ , TiO ₂ , MgO, Al ₂ O ₃ , In ₂ O ₃ , Sb ₂ O ₃ , Ta ₂ O ₅ or the like. A protective film 17 such as a silicon oxide film or a silicon nitride film is formed between the alignment film 16 and the pixel electrode 9a. The protective film 17 has a flat surface, and fills the recesses formed between the pixel electrodes 9a. Therefore, the alignment film 16 is formed on the flat surface of the protective film 17. Note that the alignment film 26 on the second substrate 20 side shown in FIG. 4B is also made of an oblique deposition film such as a resin film such as polyimide or a silicon oxide film, like the alignment film 16. In this embodiment, the alignment film 26 is an obliquely deposited film such as SiO _x (x <2), SiO ₂ , TiO ₂ , MgO, Al ₂ O ₃ , In ₂ O ₃ , Sb ₂ O ₃ , Ta ₂ O _5. An inorganic alignment film (vertical alignment film) is formed, and a protective film (not shown) such as a silicon oxide film or a silicon nitride film is formed between the alignment film 26 and the common electrode 21. The alignment films 16 and 26 vertically align the nematic liquid crystal compound having negative dielectric anisotropy used for the liquid crystal layer 50, and the liquid crystal panel 100p operates as a normally black VA mode.

(Main effects of this example)
As described above, in the liquid crystal device 100 of this embodiment, the storage capacitor 55 is formed above the pixel transistor 30, and in the storage capacitor 55, the capacitor line 5 b (first electrode 51 a) and the dielectric film 52 are formed. The second electrode 53a has translucency. For this reason, since the light is transmitted through the region where the storage capacitor 55 is formed, the region where the storage capacitor 55 is formed in the pixel 100a can also be used as the opening region 100c. Therefore, even when the pixel pitch is reduced and the number of pixels is increased for the purpose of increasing the definition of the image, the pixel aperture ratio is high, so that the amount of display light can be increased and a bright image can be displayed. it can.

  In the present embodiment, the etching stopper layer that overlaps the entire periphery of the end portion of the second electrode 53a between the dielectric film 52 and the second electrode 53a among the layers between the capacitor line 5b and the second electrode 53a. 54a is provided. Therefore, even if overetching occurs at the end of the storage capacitor 51 during dry etching when forming the second electrode 53a, silicon nitride is not provided between the capacitor line 5b and the end of the second electrode 53a. Since the insulating etching stopper layer 54a made of a film and the insulating dielectric film 52 made of an aluminum oxide film are interposed, the capacitance line 5b and the end of the second electrode 53a are short-circuited by a conductive foreign matter. Can be prevented.

  Furthermore, in this embodiment, the etching stopper layer 54a is made of an insulating film for etching stopper (silicon nitride film) having a refractive index equivalent to that of the ITO film constituting the capacitor line 5b and the second electrode 53a. Therefore, as described with reference to FIG. 1, it is possible to prevent the amount of display light emitted from the periphery of the etching stopper layer 54 a from significantly decreasing due to interference of display light.

  In this embodiment, since the etching stopper layer 54a is provided between the dielectric film 52 and the second electrode 53a, overetching occurs at the end of the storage capacitor 51 during dry etching. In addition to the etching stopper layer 54a, the dielectric film 52 always remains between the capacitor line 5b and the end of the second electrode 53a. Therefore, the etching stopper layer 54a has an advantage that it may be either an insulating material or a conductive material.

  Furthermore, in this embodiment, an interlayer insulating film 43 having a flat surface is formed on the upper layer side of the second electrode 53a, and the pixel electrode 9a is positioned on the interlayer insulating film 43 so as to overlap with the etching stopper layer 54a. A contact hole 7f is formed to electrically connect the first electrode 53a to the second electrode 53a. In such a region overlapping with the etching stopper layer 54a, the thickness of the interlayer insulating film 43 is smaller than that in other regions, so that the contact hole 7f can be easily formed in the interlayer insulating film 43.

[Specific Configuration Example 2 of Liquid Crystal Device 100 According to Embodiment 1]
7 is an explanatory diagram of a specific configuration example 2 of the liquid crystal device 100 according to the first embodiment of the present invention. FIGS. 7A and 7B are planes of adjacent pixels on the first substrate 10, respectively. It is sectional drawing when the 1st board | substrate 10 is cut | disconnected in the position equivalent to a figure and the F2-F2 'line of Fig.7 (a). FIG. 8 is an explanatory diagram of pixel components in the specific configuration example 2 of the liquid crystal device 100 according to the first embodiment of the present invention, and FIGS. 8A, 8B, 8C, and 8D are illustrated. , An explanatory diagram showing a formation region of the storage capacitor 55 by a diagonal line rising to the right, an explanatory diagram showing a formation region of the first electrode 51a (capacitor line 5b) by a diagonal line rising to the right, and a second electrode 53a (pixel) by a diagonal line rising to the right It is explanatory drawing which shows the formation area of the electrode 9a), and explanatory drawing which shows the formation area of the etching stopper layer 54a by the oblique line which goes up to the right. In FIGS. 7A and 8, the semiconductor layer 1a is indicated by a thin and short dotted line, the scanning line 3a is indicated by a thin solid line, the data line 6a and a thin film formed at the same time are indicated by a thin one-dot chain line, The line 5b is indicated by a thick solid line, the pixel electrode 9a is indicated by a thick and long broken line, and the etching stopper layer 54a is indicated by a thick two-dot chain line.

  In the liquid crystal device 100 of this embodiment, among the components described with reference to FIG. 1, the first electrode 51a corresponds to the capacitor line 5b, and the second electrode 53a corresponds to the pixel electrode 9a. 7 and 8, similarly to FIG. 1, the dielectric film is denoted by reference numeral 52, and the etching stopper layer is denoted by reference numeral 54a. Further, the basic configuration of this example is the same as the configuration example described with reference to FIGS. 3 to 6, and therefore, common portions are denoted by the same reference numerals and description thereof is omitted.

  As shown in FIGS. 7 and 8, the first substrate 10 used in the liquid crystal device 100 of the present embodiment also has a rectangular pixel electrode 9a formed on each of the plurality of pixels 100a, as in the configuration example 1. Data lines 6a and scanning lines 3a are formed along the vertical and horizontal boundaries of each pixel electrode 9a. Each of the data line 6a and the scanning line 3a extends linearly, and a pixel transistor 30 is formed in a region where the data line 6a and the scanning line 3a intersect. In this embodiment, an area surrounded by the data line 6a, the scanning line 3a, the pixel transistor 30 and the like is an opening area 100c through which light can be transmitted.

  In the first substrate 10, the capacitor line 5 b extends along the scanning line 3 a, and the capacitor line 5 b extends across a plurality of adjacent pixels 100 a. In this embodiment, the capacitor line 5 b is used as the first electrode 51 a of the storage capacitor 55. Therefore, the entire capacitor line 5b is composed of an ITO film (translucent conductive film). However, a configuration in which the capacitor line 5b is formed of a metal wiring and an ITO film electrically connected to the metal wiring is provided in each pixel 100a as the first electrode 51a may be employed.

  In the first substrate 10, as in the configuration example 1 described with reference to FIGS. 5 and 6, the pixel transistor 30 including the semiconductor layer 1 a is formed in each of the plurality of pixels 100 a. Further, a translucent interlayer insulating film 41 made of a silicon oxide film or the like is formed on the upper layer side of the scanning line 3a, and a data line 6a and a drain electrode 6b are formed on the upper layer of the interlayer insulating film 41. Yes. A light-transmitting interlayer insulating film 42 made of a silicon oxide film or the like is formed on the upper side of the data line 6a and the drain electrode 6b, and the surface of the interlayer insulating film 42 is flattened by polishing.

  A capacitor line 5b is formed on the surface of the interlayer insulating film 42 as the first electrode 51a shown in FIG. 1, and the capacitor line 5b (first electrode 51a) is made of an ITO film (translucent conductive film). Therefore, the interlayer insulating film 42 corresponds to the base 40 shown in FIG.

  A dielectric film 52 is formed on the upper layer side of the capacitor line 5b. In this embodiment, the dielectric film 52 is made of the light-transmitting dielectric film described in Embodiment Mode 1. In this embodiment, an aluminum oxide film is used as the dielectric film 52.

  A pixel electrode 9a made of an ITO film is formed on the surface of the dielectric film 52, and the pixel electrode 9a is opposed to the capacitor line 5b through the dielectric film 52 as the second electrode 53a.

  Thus, in this embodiment, the capacitive line 5b (first electrode 51a) made of an ITO film, the translucent dielectric film 52 made of an aluminum oxide film, and the pixel electrode 9a (second electrode 53a) made of the ITO film. Thus, a storage capacitor 55 is configured.

  In the first substrate 10, the pixel electrode 9a is interposed between the dielectric film 52 and the pixel electrode 9a among the layers between the capacitor line 5b (first electrode 51a) and the pixel electrode 9a (second electrode 53a). An etching stopper layer 54a is provided so as to overlap the end of the entire periphery. Here, the etching stopper layer 54a is made of a translucent film having a refractive index of ± 20% with respect to the refractive index of the translucent conductive film constituting at least one of the capacitor line 5b and the pixel electrode 9a. A refractive index equivalent to that of the line 5b or the pixel electrode 9a is provided. More specifically, also in this embodiment, as in the first embodiment, the capacitor line 5b and the pixel electrode 9a are made of an ITO film, and the refractive index of the ITO film is 1.9. Therefore, a light-transmitting insulating film having a refractive index of 1.52 to 2.28 (1.9 ± 20%) is used as the etching stopper layer 54a. An insulating film is mentioned. In this embodiment, a silicon nitride film is used as the etching stopper layer 54a. In this embodiment, since the etching stopper layer 54a is formed so as to overlap the end of the pixel electrode 9a over the entire circumference, the etching stopper layer 54a is formed along the boundary between the adjacent pixels 100a. It is formed so that it may straddle the edge part.

  In this embodiment, the pixel electrode 9a has a contact hole 7h penetrating the dielectric film 52 and the interlayer insulating film 42 in a region where the capacitor line 5b is not formed, such as a region where a notch is formed in the capacitor line 5b. And is electrically connected to the drain electrode 6b. An alignment film 16 (inorganic alignment film / vertical alignment film) made of an oblique vapor deposition film is formed on the surface of the pixel electrode 9a. The protective film 17 has a flat surface, and fills the recesses formed between the pixel electrodes 9a. Therefore, the alignment film 16 is formed on the flat surface of the protective film 17.

(Main effects of this example)
As described above, in the liquid crystal device 100 of this embodiment, the storage capacitor 55 is formed above the pixel transistor 30, and in the storage capacitor 55, the capacitor line 5 b (first electrode 51 a) and the dielectric film 52 are formed. The second electrode 53a has translucency. For this reason, since the light is also transmitted through the region where the storage capacitor 55 is formed, the region where the storage capacitor 55 is formed in the pixel 100a can be used as the opening region 100c. Therefore, even when the pixel pitch is reduced and the number of pixels is increased for the purpose of increasing the definition of the image, the pixel aperture ratio is high, so that the amount of display light can be increased and a bright image can be displayed. it can.

  An etching stopper layer 54a is provided between the dielectric film 52 and the pixel electrode 9a in the interlayer between the capacitor line 5b and the pixel electrode 9a so as to overlap the end of the pixel electrode 9a over the entire circumference. For this reason, at the end portion of the storage capacitor 51, even if overetching occurs during dry etching when forming the pixel electrode 9 a, the silicon nitride film is formed between the capacitor line 5 b and the end portion of the pixel electrode 9 a. Since the insulating etching stopper layer 54a and the insulating dielectric film 52 made of an aluminum oxide film are interposed, the capacitor line 5b and the end of the pixel electrode 9a are prevented from being short-circuited by the conductive foreign matter. be able to.

  Furthermore, in this embodiment, the etching stopper layer 54a is made of an insulating film for etching stopper (silicon nitride film) having a refractive index equivalent to that of the ITO film constituting the capacitor line 5b and the pixel electrode 9a. Therefore, as described with reference to FIG. 1, it is possible to prevent the amount of display light emitted from the periphery of the etching stopper layer 54 a from significantly decreasing due to interference of display light.

  In this embodiment, since the etching stopper layer 54a is provided between the dielectric film 52 and the pixel electrode 9a, overetching occurs at the end of the storage capacitor 51 during dry etching. In addition to the etching stopper layer 54a, the dielectric film 52 always remains between the line 5b and the end of the second electrode 53a. Therefore, the etching stopper layer 54a has an advantage that it may be either an insulating material or a conductive material.

[Specific Configuration Example 1 of Liquid Crystal Device 100 According to Embodiment 2]
9 is an explanatory diagram of a specific configuration example 1 of the liquid crystal device 100 according to the second embodiment of the present invention. FIGS. 9A and 9B are planes of adjacent pixels on the first substrate 10, respectively. It is sectional drawing when the 1st board | substrate 10 is cut | disconnected in the position equivalent to a figure and the F3-F3 'line of Fig.9 (a). In FIG. 9A, as in FIG. 5A, the semiconductor layer 1a is indicated by a thin and short dotted line, the scanning line 3a is indicated by a thin solid line, and the data line 6a and the thin film formed simultaneously therewith are one thin point. The capacitor line 5b is indicated by a thick solid line, the pixel electrode 9a is indicated by a thick and long broken line, the second electrode 53a is indicated by a thin and long broken line, and the etching stopper layer 54a is indicated by a thick two-dot chain line. Further, the basic configuration of this example is the same as the configuration example described with reference to FIGS. 3 to 6, and therefore, common portions are denoted by the same reference numerals and description thereof is omitted.

  As shown in FIGS. 9A and 9B, even in the first substrate 10 used in the liquid crystal device 100 of the present embodiment, the storage capacitor 55 is similar to the configuration example described with reference to FIGS. The capacitor line 5b (first electrode 51a), the dielectric film 52, and the second electrode 53a are translucent. Further, an etching stopper layer 54a is provided between the capacitor line 5b and the second electrode 53a so as to overlap the end of the second electrode 53a over the entire circumference. The etching stopper layer 54a is made of a silicon nitride film having a refractive index equivalent to that of the ITO film constituting the capacitor line 5b and the second electrode 53a.

  Here, unlike the configuration example described with reference to FIGS. 3 to 6, the etching stopper layer 54 a is configured between the capacitor line 5 b and the dielectric film 52. Other configurations are the same as the configuration example described with reference to FIGS.

  The liquid crystal device 100 having such a configuration also has substantially the same effect as the configuration example described with reference to FIGS. However, since the etching stopper layer 54a is provided between the capacitor line 3b and the dielectric film 52, the dielectric film 52 is removed when overetching occurs at the end of the storage capacitor 51 during dry etching. Will be. Therefore, it is necessary to use an insulating material for the etching stopper layer 54a.

[Specific Configuration Example 2 of Liquid Crystal Device 100 According to Embodiment 2]
FIG. 10 is an explanatory diagram of a specific configuration example 2 of the liquid crystal device 100 according to the second embodiment of the present invention. FIGS. 10A and 10B are planes of adjacent pixels on the first substrate 10, respectively. It is sectional drawing when the 1st board | substrate 10 is cut | disconnected in the figure and the position corresponded to F4-F4 'line of Fig.10 (a). In FIG. 10A, as in FIG. 7A, the semiconductor layer 1a is indicated by a thin and short dotted line, the scanning line 3a is indicated by a thin solid line, and the data line 6a and the thin film formed at the same time are one thin point. It is indicated by a chain line, the capacitance line 5b is indicated by a thick solid line, the pixel electrode 9a is indicated by a thick and long broken line, and the etching stopper layer 54a is indicated by a thick two-dot chain line. The basic configuration of this example is the same as the configuration example described with reference to FIGS. 7 and 8, and therefore, common portions are denoted by the same reference numerals and description thereof is omitted.

  As shown in FIGS. 10A and 10B, even in the first substrate 10 used in the liquid crystal device 100 of the present embodiment, the storage capacitor 55 has the same structure as described with reference to FIGS. The capacitor line 5b (first electrode 51a), the dielectric film 52, and the pixel electrode 9a (second electrode 53a) are translucent. Further, an etching stopper layer 54a is provided between the capacitor line 5b and the pixel electrode 9a so as to overlap the entire edge of the pixel electrode 9a. The etching stopper layer 54a is made of a silicon nitride film having a refractive index equivalent to that of the ITO film constituting the capacitor line 5b and the pixel electrode 9a.

  Here, unlike the configuration example described with reference to FIGS. 7 and 8, the etching stopper layer 54 a is configured between the capacitor line 5 b and the dielectric film 52. Other configurations are the same as the configuration example described with reference to FIGS. 7 and 8, and thus description thereof is omitted.

  The liquid crystal device 100 having such a configuration also has substantially the same effect as the configuration example described with reference to FIGS. However, since the etching stopper layer 54a is provided between the capacitor line 5b and the dielectric film 52, if overetching occurs at the end of the storage capacitor 51 during dry etching, the dielectric film 52 is removed. Will be. Therefore, it is necessary to use an insulating material for the etching stopper layer 54a.

[Specific Configuration Example of Liquid Crystal Device 100 According to Embodiments 3 and 4]
In the specific configuration example of the liquid crystal device 100 according to the first and second embodiments, the light-transmitting film is used as the etching stopper layer 54a. However, as described in the third and fourth embodiments, as the etching stopper layer 54a, the light transmitting film is used. An absorptive light shielding film may be used. According to such a configuration, the light traveling toward the etching stopper layer 54a is shielded by the etching stopper layer 54a. Therefore, in the vicinity of the etching stopper layer 54a, there is no interference between the light that passes through the etching stopper layer 54a and the light that does not pass through the etching stopper layer 54a. Therefore, the amount of display light emitted from the periphery of the etching stopper layer 54a A decrease can be prevented.

[Other application examples to liquid crystal devices]
In the above embodiment, the first electrode 51a on the lower layer side is an electrode electrically connected to the capacitor line 5b or the capacitor line 5b, and the second electrode 53a on the upper layer side is electrically connected to the pixel electrode 9a itself or the pixel electrode 9a. Connected electrodes. However, when the first electrode 51a on the lower layer side is an electrode that is electrically connected to the pixel electrode 9a, and the second electrode 53a on the upper layer side is an electrode that is electrically connected to the capacitor line 5b or the capacitor line 5b. The present invention may be applied.

[Other embodiments]
In the first and second embodiments, the etching stopper layer 54a is provided so as to overlap the end of the second electrode 53a on the entire circumference. However, depending on the positional relationship between the second electrode 53a and the first electrode 51a, etc. In some cases, one end of the second electrode 53a overlaps the first electrode 51a, and the other end does not overlap the first electrode 51a. In such a case, the etching stopper layer 54a may be provided only on the end portion of the second electrode 53a that overlaps the first electrode 51a. According to such a configuration, it is possible to minimize a decrease in the amount of display light due to the etching stopper layer 54a. In the first and second embodiments, the refractive index of the etching stopper layer 54a is the same as that of the first electrode 51a or the second electrode 53a. However, the absorption coefficient of the etching stopper layer 54a is the first. The absorption coefficient is preferably equal to or less than the absorption coefficient of the first electrode 51a or the second electrode 53a. That is, the etching stopper layer 54a has a light transmittance equal to or higher than that of the first electrode 51a or the second electrode 53a. According to such a configuration, attenuation of light transmitted through the etching stopper layer 54a can be kept low.

[Example of mounting on electronic devices]
An electronic apparatus to which the liquid crystal device 100 according to the above-described embodiment is applied will be described. FIG. 11 is a schematic configuration diagram of a projection display device using a liquid crystal device to which the present invention is applied.

  A projection type display device 110 shown in FIG. 11 is a so-called projection type projection display device that irradiates light onto a screen 111 provided on the viewer side and observes light reflected by the screen 111. The projection display device 110 includes a light source unit 130 including a light source 112, dichroic mirrors 113 and 114, liquid crystal light valves 115 to 117 (liquid crystal device 100), a projection optical system 118, a cross dichroic prism 119, and a relay. System 120.

  The light source 112 is composed of an ultrahigh pressure mercury lamp that supplies light including red light, green light, and blue light. The dichroic mirror 113 is configured to transmit red light from the light source 112 and reflect green light and blue light. The dichroic mirror 114 is configured to transmit blue light and reflect green light among the green light and the blue light reflected by the dichroic mirror 113. Thus, the dichroic mirrors 113 and 114 constitute a color separation optical system that separates the light emitted from the light source 112 into red light, green light, and blue light.

  Here, between the dichroic mirror 113 and the light source 112, an integrator 121 and a polarization conversion element 122 are sequentially arranged from the light source 112. The integrator 121 is configured to uniformize the illuminance distribution of the light emitted from the light source 112. Further, the polarization conversion element 122 is configured to change the light from the light source 112 into polarized light having a specific vibration direction such as s-polarized light.

  The liquid crystal light valve 115 is a transmissive liquid crystal device 100 that modulates red light transmitted through the dichroic mirror 113 and reflected by the reflection mirror 123 in accordance with an image signal. The liquid crystal light valve 115 includes a λ / 2 phase difference plate 115a, a first polarizing plate 115b, a liquid crystal panel 115c, and a second polarizing plate 115d. Here, the red light incident on the liquid crystal light valve 115 remains s-polarized light because the polarization of the light does not change even if it passes through the dichroic mirror 113.

  The λ / 2 phase difference plate 115a is an optical element that converts s-polarized light incident on the liquid crystal light valve 115 into p-polarized light. The first polarizing plate 115b is a polarizing plate that blocks s-polarized light and transmits p-polarized light. The liquid crystal panel 115c is configured to convert p-polarized light into s-polarized light (circularly polarized light or elliptically polarized light in the case of halftone) by modulation according to the image signal. Furthermore, the second polarizing plate 115d is a polarizing plate that blocks p-polarized light and transmits s-polarized light. Therefore, the liquid crystal light valve 115 is configured to modulate the red light in accordance with the image signal and to emit the modulated red light toward the cross dichroic prism 119.

  Note that the λ / 2 phase difference plate 115a and the first polarizing plate 115b are disposed in contact with a light-transmitting glass plate 115e that does not convert polarized light, and the λ / 2 phase difference plate 115a and the first polarizing plate 115b. It is possible to avoid distortion of 115b due to heat generation.

  The liquid crystal light valve 116 is a transmissive liquid crystal device 100 that modulates green light reflected by the dichroic mirror 114 after being reflected by the dichroic mirror 113 in accordance with an image signal. Similarly to the liquid crystal light valve 115, the liquid crystal light valve 116 includes a first polarizing plate 116b, a liquid crystal panel 116c, and a second polarizing plate 116d. Green light incident on the liquid crystal light valve 116 is s-polarized light that is reflected by the dichroic mirrors 113 and 114 and then incident. The first polarizing plate 116b is a polarizing plate that blocks p-polarized light and transmits s-polarized light. The liquid crystal panel 116c is configured to convert s-polarized light into p-polarized light (circularly polarized light or elliptically polarized light in the case of halftone) by modulation according to the image signal. The second polarizing plate 116d is a polarizing plate that blocks s-polarized light and transmits p-polarized light. Accordingly, the liquid crystal light valve 116 is configured to modulate green light in accordance with the image signal and to emit the modulated green light toward the cross dichroic prism 119.

  The liquid crystal light valve 117 is a transmissive liquid crystal device 100 that modulates blue light reflected by the dichroic mirror 113 and transmitted through the dichroic mirror 114 and then through the relay system 120 in accordance with an image signal. Similarly to the liquid crystal light valves 115 and 116, the liquid crystal light valve 117 includes a λ / 2 retardation film 117a, a first polarizing plate 117b, a liquid crystal panel 117c, and a second polarizing plate 117d. Here, since the blue light incident on the liquid crystal light valve 117 is reflected by the two reflecting mirrors 125a and 125b described later of the relay system 120 after being reflected by the dichroic mirror 113 and transmitted through the dichroic mirror 114, the s-polarized light is reflected. It has become.

  The λ / 2 phase difference plate 117a is an optical element that converts s-polarized light incident on the liquid crystal light valve 117 into p-polarized light. The first polarizing plate 117b is a polarizing plate that blocks s-polarized light and transmits p-polarized light. The liquid crystal panel 117c is configured to convert p-polarized light into s-polarized light (circularly polarized light or elliptically polarized light in the case of halftone) by modulation according to the image signal. Furthermore, the second polarizing plate 117d is a polarizing plate that blocks p-polarized light and transmits s-polarized light. Accordingly, the liquid crystal light valve 117 is configured to modulate blue light in accordance with an image signal and to emit the modulated blue light toward the cross dichroic prism 119. The λ / 2 phase difference plate 117a and the first polarizing plate 117b are disposed in contact with the glass plate 117e.

  The relay system 120 includes relay lenses 124a and 124b and reflection mirrors 125a and 125b. The relay lenses 124a and 124b are provided to prevent light loss due to a long blue light path. Here, the relay lens 124a is disposed between the dichroic mirror 114 and the reflection mirror 125a. The relay lens 124b is disposed between the reflection mirrors 125a and 125b. The reflection mirror 125a is disposed so as to reflect the blue light transmitted through the dichroic mirror 114 and emitted from the relay lens 124a toward the relay lens 124b. The reflection mirror 125b is arranged to reflect the blue light emitted from the relay lens 124b toward the liquid crystal light valve 117.

  The cross dichroic prism 119 is a color combining optical system in which two dichroic films 119a and 119b are arranged orthogonally in an X shape. The dichroic film 119a is a film that reflects blue light and transmits green light, and the dichroic film 119b is a film that reflects red light and transmits green light. Therefore, the cross dichroic prism 119 is configured to combine the red light, the green light, and the blue light modulated by the liquid crystal light valves 115 to 117 and emit the resultant light toward the projection optical system 118.

  Note that light incident on the cross dichroic prism 119 from the liquid crystal light valves 115 and 117 is s-polarized light, and light incident on the cross dichroic prism 119 from the liquid crystal light valve 116 is p-polarized light. Thus, by making the light incident on the cross dichroic prism 119 into different types of polarized light, the light incident from the liquid crystal light valves 115 to 117 in the cross dichroic prism 119 can be synthesized. Here, in general, the dichroic films 119a and 119b are excellent in the reflection characteristics of s-polarized light. Therefore, red light and blue light reflected by the dichroic films 119a and 119b are s-polarized light, and green light transmitted through the dichroic films 119a and 119b is p-polarized light. The projection optical system 118 has a projection lens (not shown) and is configured to project the light combined by the cross dichroic prism 119 onto the screen 111.

(Other projection display devices)
In addition, about a projection type display apparatus, you may comprise the LED light source etc. which radiate | emit the light of each color as a light source part, and supply each color light radiate | emitted from this LED light source to another liquid crystal device. .

(Other electronic devices)
As for the liquid crystal device 100 to which the present invention is applied, in addition to the electronic devices described above, mobile phones, personal digital assistants (PDAs), digital cameras, liquid crystal televisions, car navigation devices, video phones, POS terminals, You may use as a direct view type | mold display apparatus in electronic devices, such as an apparatus provided with the touch panel.

5b..Capacitance line, 9a..Pixel electrode, 10..First substrate, 20..Second substrate, 21..Common electrode, 30..Pixel transistor, 50..Liquid crystal layer, 51a..First electrode , 52 .. Dielectric film, 53 a .. Second electrode, 54 a .. Etching stopper layer, 55 .. Storage capacity, 100 .. Liquid crystal device, 100 a .. Pixel, 100 c.

Claims (10)

A plurality of pixels having an aperture region through which light can be transmitted;
A storage capacitor in which a transparent first electrode, a transparent dielectric film, and a transparent second electrode are sequentially stacked in the opening region;
It consists of a translucent film having a refractive index of ± 20% with respect to the refractive index of the translucent conductive film constituting at least one of the first electrode and the second electrode, and the first electrode and the second electrode An etching stopper layer overlapping the end of the second electrode between the layers between the electrodes;
A liquid crystal device comprising: The first electrode and the second electrode are both ITO films,
The liquid crystal device according to claim 1, wherein the etching stopper layer is a silicon compound containing nitrogen. A plurality of pixels having an aperture region through which light can be transmitted;
A storage capacitor in which a transparent first electrode, a transparent dielectric film, and a transparent second electrode are sequentially stacked in the opening region;
A light-shielding etching stopper layer overlapping an end of the second electrode between the first electrode and the second electrode;
A liquid crystal device comprising:   4. The liquid crystal device according to claim 1, wherein the etching stopper layer is provided between the dielectric film and the second electrode. 5.   4. The liquid crystal device according to claim 1, wherein the etching stopper layer is provided between the first electrode and the dielectric film. 5. A translucent pixel electrode electrically connected to the second electrode on the upper layer side of the second electrode;
6. The liquid crystal device according to claim 1, wherein the first electrode is a capacitor line extending across a plurality of adjacent pixels among the plurality of pixels. 6. A light-transmitting interlayer insulating film having a flat surface is provided between the second electrode and the pixel electrode.
7. The liquid crystal device according to claim 6, wherein a contact hole for electrically connecting the second electrode and the pixel electrode is formed in the interlayer insulating film at a position overlapping the etching stopper layer. . The second electrode is a pixel electrode;
6. The liquid crystal device according to claim 1, wherein the first electrode is a capacitor line extending across a plurality of adjacent pixels among the plurality of pixels. 6. The pixel includes a pixel transistor,
The liquid crystal device according to claim 1, wherein the storage capacitor is provided on an upper layer side than the pixel transistor. A projection type display device comprising the liquid crystal device according to any one of claims 1 to 9,
A light source unit for emitting light supplied to the liquid crystal device;
A projection optical system for projecting light modulated by the liquid crystal device;
A projection display device characterized by comprising:

Images