JP2012185422A - Liquid crystal device, method for manufacturing liquid crystal device and projection type display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a liquid crystal device capable of electrically connecting between an electrode part for inter-substrate conduction and conductive particles with a simple structure even when an inorganic alignment film covers the surface of the electrode part for inter-substrate conduction, a method for manufacturing the liquid crystal device and a projection type display device using the liquid crystal device as a light valve.SOLUTION: In a liquid crystal device 100, for a counter substrate 20, an alignment film 26 is an inorganic alignment film for covering the surface of an electrode part for inter-substrate conduction 25t of a pair of substrates composed of an element substrate 10 and a counter substrate 20. However, since the electrode part for inter-substrate conduction 25t is formed by an aluminum alloy film having a hardness lower than that of conductive particles 209b, the conductive particles 109b break through the alignment film 26 to bite into the electrode part for inter-substrate conduction 25t and electrically connects with the electrode part for inter-substrate conduction 25t. Thus, in the counter substrate 20, the alignment film 26 may be formed on the whole surface and requires no mask vapor deposition.

Description

  The present invention relates to a liquid crystal device in which a pair of substrates that hold liquid crystal are conducted by conductive particles, a method for manufacturing the liquid crystal device, and a projection display device using the liquid crystal device as a light valve.

  In a liquid crystal device, an element substrate in which pixel electrodes are arranged on one side and a counter substrate provided with a common electrode to which a common potential is applied are bonded together by a seal material, and the seal material is interposed between the element substrate and the counter substrate. A liquid crystal layer is held in a region surrounded by. In such a liquid crystal device, when a common potential is supplied to the common electrode from the element substrate, so-called inter-substrate conduction is performed. In the inter-substrate conduction, an inter-substrate conduction electrode portion is provided on each of the element substrate and the counter substrate, and the inter-substrate conduction between the element substrate and the counter substrate is performed by conductive particles interposed between the element substrate and the counter substrate. Conduction between electrode parts. Here, an inorganic alignment film such as a silicon oxide film is formed on the element substrate or the counter substrate. If the inorganic alignment film covers the surface of the inter-substrate conduction electrode portion, inter-substrate conduction is hindered. .

  On the other hand, a method of forming an inorganic alignment film by a mask vapor deposition method in which vapor deposition is performed in a state where a part of the substrate surface is covered with a mask has been proposed. It can be selectively formed in a region (see Patent Document 1).

  In addition, a method has been proposed in which a porous layer is provided on the lower layer side of the inorganic alignment film in the inter-substrate conducting electrode part, and the porous layer is deformed by conductive particles to conduct the inter-substrate conduction (see Patent Document 2). .

JP 2007-65439 A JP 2009-251033 A

  However, with the technique described in Patent Document 1, it takes a lot of time and effort to manage the vapor deposition mask and align the vapor deposition mask with the substrate. In addition, an alignment film may be formed on the surface of the inter-substrate conduction electrode part due to the influence of the mask accuracy. In this case, there is a problem that the reliability of the inter-substrate conduction part is lowered. Further, the technique described in Patent Document 2 has a problem that a large number of steps are required for forming the porous layer.

  In view of the above problems, the problem of the present invention is that the inter-substrate conduction electrode portion and the conductive particles are conducted with a simple configuration even when the inorganic alignment film covers the surface of the inter-substrate conduction electrode portion. An object of the present invention is to provide a liquid crystal device, a method for manufacturing the liquid crystal device, and a projection display device using the liquid crystal device as a light valve.

  In order to solve the above-mentioned problems, the present invention provides a pair of substrates each provided with a liquid crystal driving electrode, an inter-substrate conduction electrode portion, and an alignment film covering the liquid crystal driving electrode on each opposing substrate surface, In a liquid crystal device having a spherical conductive particle with respect to one location of the inter-substrate conduction electrode portion while interposing the inter-substrate conduction electrode portion interposed between a pair of substrates, In at least one of the pair of substrates, the inter-substrate conduction electrode is formed from a metal film layer having a hardness lower than that of the spherical conductive particles, and the alignment film made of an inorganic alignment film is formed between the substrates. The conductive electrode portion is formed so as to cover the conductive film, and the spherical conductive particles break through the inorganic alignment film and are in contact with the metal film layer. In the present invention, "the interelectrode conductive electrode portion is formed from a metal film layer having a hardness lower than that of the conductive particles" means that the intersubstrate conductive electrode portion is formed of a metal film layer having a hardness lower than that of the conductive particles, This includes the case where the inter-substrate conducting electrode portion is a multilayer of a metal film layer having a lower hardness than the conductive particles and another layer.

  The present invention also includes a pair of substrates facing each other on which one of the liquid crystal driving electrodes, the inter-substrate conduction electrode portion, and the alignment film laminated on the surface of the liquid crystal driving electrode are formed, The liquid crystal layer held between the pair of substrates and the inter-substrate conduction electrode portion interposed between the pair of substrates and one for one portion of the inter-substrate conduction electrode portion. In the manufacturing method of the liquid crystal device having the spherical conductive particles, in the substrate forming step of forming at least one of the pair of substrates, the inorganic alignment film that covers the interelectrode conductive electrode portion A state in which an alignment film is formed, a metal film layer having a hardness lower than that of the spherical conductive particles is provided in the inter-substrate conduction electrode portion, and the spherical conductive particles are disposed between the pair of substrates. Attach the pair of substrates with In the bonding step to I, characterized by a state of the conductive particles of the spherical shape is in conduction with the metal film layer breaks through the inorganic alignment layer.

  In the present invention, in at least one of the pair of substrates, a metal film having a hardness lower than that of the spherical conductive particles is provided on the lower layer side of the inorganic alignment film in the interelectrode conductive electrode portion whose surface is covered with the inorganic alignment film. Therefore, when the pair of substrates are bonded together, the inorganic alignment film is pushed and broken by the spherical conductive particles. Accordingly, the spherical conductive particles break through the inorganic alignment film and bite into the metal film layer, and become conductive with the metal film layer. Therefore, according to the present invention, the inorganic alignment film can be formed between the inter-substrate conduction electrode portions only by adopting a simple configuration in which the metal film layer having a hardness lower than that of the spherical conductive particles is provided on the inter-substrate conduction electrode portion. Even when the surface is covered, the inter-substrate conducting electrode part and the conductive particles can be conducted.

  In the present invention, the pair of substrates includes a pixel electrode as the liquid crystal driving electrode, an element substrate side alignment film as the alignment film, and an element substrate side inter-substrate conduction electrode section as the inter-substrate conduction electrode section. And a common electrode as the liquid crystal driving electrode, a counter substrate side alignment film as the alignment film, and a counter substrate side inter-substrate conduction electrode portion as the inter-substrate conduction electrode portion. The counter substrate-side alignment film is an inorganic alignment film that covers the counter substrate-side inter-substrate conduction electrode portion, at least in the counter substrate, and the counter-substrate-side inter-substrate conduction electrode portion Is formed from a metal film layer having a lower hardness than the spherical conductive particles, and the spherical conductive particles penetrate the inorganic alignment film and are electrically connected to the metal film layer.

  In this case, it is preferable that the alignment film is formed on the entire surface of the counter substrate. Since no terminal or the like is formed on the counter substrate side of the element substrate and the counter substrate, according to the present invention, the inorganic alignment film can be formed on the entire surface of the counter substrate, and there is no need to perform mask vapor deposition. .

  In the present invention, in the element substrate, the element substrate-side alignment film is an inorganic alignment film that covers a surface of the element substrate-side inter-substrate conduction electrode part, and the element substrate-side inter-substrate conduction electrode part is Preferably, the spherical conductive particles are formed from a metal film layer having a hardness lower than that of the spherical conductive particles, and the spherical conductive particles penetrate the inorganic alignment film and are electrically connected to the metal film layer. According to such a configuration, when the inorganic alignment film is formed by mask vapor deposition, it is not necessary to cover the element substrate side inter-substrate conduction electrode portion with the mask. Therefore, the mask used for depositing the element substrate-side alignment film only needs to cover the terminals, so that the mask configuration can be simplified.

  In the present invention, in the counter substrate, a light-shielding layer made of the metal film layer is formed on a side opposite to the side where the element substrate is located with respect to the common electrode. The electrode portion is preferably a non-formation region of the common electrode. According to this configuration, the metal film layer can be provided on the counter substrate side inter-substrate conduction electrode portion by using the light shielding layer forming step.

  In the present invention, the metal film layer is preferably an aluminum-based metal film. The aluminum-based metal film has a soft Mohs hardness of about 2.9, so that the conductive particles tend to bite into it.

  In the present invention, the metal film layer may employ a configuration in which a barrier layer is laminated on the surface of the aluminum-based metal film. The aluminum-based metal film in the present invention is meant to include a single aluminum film and an aluminum alloy film. According to such a configuration, it is possible to avoid the occurrence of problems such as corrosion of the aluminum-based metal layer when the resist mask is peeled when patterning the light shielding layer using photolithography technology. In addition, when the common electrode or the like is formed by patterning using an photolithography technique after the aluminum metal film is formed, the aluminum metal layer is not corroded.

  In the present invention, the spherical conductive particles are preferably formed by coating the surface of spherical glass fibers (glass beads) with a metal. Since the Mohs hardness of glass is about 5, which is high, the hardness of the conductive particles is high. For this reason, the conductive particles easily break through the inorganic alignment film. Further, when the hardness of the conductive particles is increased, the types of metals that can be used as the metal film can be expanded.

  In the present invention, the inorganic alignment film is, for example, an oblique deposition film of silicon oxide.

  The liquid crystal device according to the present invention is used as, for example, a light valve of a projection display device or a direct view display device. When the liquid crystal device according to the present invention is used in a projection display device, the projection display device includes a light source unit that emits light supplied to the liquid crystal device, and projection optics that projects light modulated by the liquid crystal device. A system is provided.

1 is a block diagram showing an electrical configuration of a liquid crystal device according to Embodiment 1 of the present invention. It is explanatory drawing of the liquid crystal panel of the liquid crystal device which concerns on Embodiment 1 of this invention. It is explanatory drawing which shows the structure of the electrode etc. of the liquid crystal panel used for the liquid crystal device which concerns on Embodiment 1 of this invention. It is explanatory drawing of the pixel of the liquid crystal device which concerns on Embodiment 1 of this invention. It is sectional drawing when the liquid crystal device which concerns on Embodiment 1 of this invention is cut | disconnected in the position which passes the electrode part for board | substrate conduction | electrical_connection. It is explanatory drawing which shows the manufacturing process of the liquid crystal device which concerns on embodiment of this invention. It is process sectional drawing which shows the board | substrate formation process of the liquid crystal device which concerns on Embodiment 1 of this invention. It is process sectional drawing which shows the bonding process of the liquid crystal device which concerns on Embodiment 1 of this invention. It is sectional drawing when the liquid crystal device which concerns on Embodiment 2 of this invention is cut | disconnected in the position which passes the electrode part for board | substrate conduction | electrical_connection. It is sectional drawing when the liquid crystal device which concerns on Embodiment 3 of this invention is cut | disconnected in the position which passes the electrode part for board | substrate conduction | electrical_connection. It is a schematic block diagram of the projection type display apparatus using the liquid crystal device to which this invention is applied.

  Embodiments of the present invention will be described with reference to the drawings. In the drawings to be referred to in the following description, the scales are different for each layer and each member so that each layer and each member have a size that can be recognized on the drawing. Note that when the direction of the current flowing through the field effect transistor is reversed, the source and the drain are interchanged. However, in the following description, for convenience, the side to which the pixel electrode is connected is used as the drain and the data line is connected. The side will be described as a source. Further, when describing the layers formed on the element substrate, the upper layer side or the surface side means the side opposite to the side where the substrate body of the element substrate is located (the side on which the counter substrate is located), and the lower layer side means It means the side where the substrate body of the element substrate is located. In describing the layers formed on the counter substrate, the upper layer side or the surface side means the side opposite to the side where the substrate body of the counter substrate is located (the side where the element substrate is located), and the lower layer side is It means the side where the substrate body of the counter substrate is located.

[Embodiment 1]
(overall structure)
FIG. 1 is a block diagram showing an electrical configuration of the liquid crystal device according to Embodiment 1 of the present invention. In FIG. 1, a liquid crystal device 100 has a liquid crystal panel 100p in a TN (Twisted Nematic) mode or a VA (Vertical Alignment) mode, and the liquid crystal panel 100p has a plurality of pixels 100a arranged in a matrix in the central region. The image display area 10a (effective pixel area) is provided. In the liquid crystal panel 100p, in an element substrate 10 (see FIG. 2 and the like) described later, a plurality of data lines 6a (image signal lines) and a plurality of scanning lines 3a extend vertically and horizontally inside the image display region 10a. A pixel 100a is formed at a position corresponding to the intersection. In each of the plurality of pixels 100a, a pixel transistor 30 made of a field effect transistor and a pixel electrode 9a described later are formed. The data line 6 a is electrically connected to the source of the pixel transistor 30, the scanning line 3 a is electrically connected to the gate of the pixel transistor 30, and the pixel electrode 9 a is electrically connected to the drain of the pixel transistor 30. Has been.

  In the element substrate 10, a scanning line driving circuit 104 and a data line driving circuit 101 are provided on the outer peripheral side of the image display region 10 a. The data line driving circuit 101 is electrically connected to each data line 6a, and sequentially supplies the image signal supplied from the image processing circuit to each data line 6a. The scanning line driving circuit 104 is electrically connected to each scanning line 3a, and sequentially supplies a scanning signal to each scanning line 3a.

  In each pixel 100a, the pixel electrode 9a is opposed to a common electrode formed on a counter substrate 20 (see FIG. 2 and the like), which will be described later, via a liquid crystal layer, and constitutes a liquid crystal capacitor 50a. Each pixel 100a is provided with a holding capacitor 55 in parallel with the liquid crystal capacitor 50a in order to prevent fluctuations in the image signal held in the liquid crystal capacitor 50a. In this embodiment, in order to form the storage capacitor 55, the capacitor line 5b extending in parallel with the scanning line 3a is formed across the plurality of pixels 100a. In this embodiment, the capacitor line 5b is electrically connected to the constant potential wiring 6t to which the common potential Vcom is applied.

(Configuration of liquid crystal panel 100p and element substrate 10)
FIG. 2 is an explanatory diagram of the liquid crystal panel 100p of the liquid crystal device 100 according to Embodiment 1 of the present invention. FIGS. 2A and 2B each show the liquid crystal panel 100p together with each component on the side of the counter substrate. It is the top view seen from and HH 'sectional drawing. FIG. 3 is an explanatory diagram showing the configuration of the electrodes and the like of the liquid crystal panel 100p used in the liquid crystal device 100 according to Embodiment 1 of the present invention. FIGS. 3 (a) and 3 (b) show the overall configuration of the electrodes and the like. It is explanatory drawing which shows a simple layout, and explanatory drawing which expands and shows one of the corner | angular parts of the liquid crystal panel 100p. In FIG. 3, the number of pixel electrodes 9a, dummy pixel electrodes 9b, and the like are small.

  As shown in FIGS. 2 and 3, in the liquid crystal panel 100 p, the element substrate 10 and the counter substrate 20 are bonded together with a seal material 107 through a predetermined gap, and the seal material 107 is along the outer edge of the counter substrate 20. It is provided in a frame shape. The sealing material 107 is an adhesive made of a photo-curing resin, a thermosetting resin, or the like, and is mixed with a gap material 107a such as glass fiber or glass beads for setting the distance between both substrates to a predetermined value.

  In the liquid crystal panel 100p having such a configuration, the element substrate 10 and the counter substrate 20 are both square, and the image display area 10a described with reference to FIG. 1 is provided as a square area in the approximate center of the liquid crystal panel 100p. ing. Corresponding to this shape, the sealing material 107 is also provided in a substantially square shape, and the outer side of the image display area 10a is a rectangular frame-shaped outer peripheral area 10c.

  In the element substrate 10, the data line driving circuit 101 and a plurality of terminals 102 are formed along one side of the element substrate 10 in the outer peripheral region 10 c, and the scanning line driving circuit 104 is formed along another side adjacent to the one side. Is formed. Note that a flexible wiring board (not shown) is connected to the terminal 102, and various potentials and various signals are input to the element substrate 10 through the flexible wiring board.

  As will be described in detail later, the pixel transistor 30 described with reference to FIG. 1 and the pixel transistor 30 are electrically connected to the image display region 10a on the one substrate surface facing the counter substrate 20 in the element substrate 10. Connected pixel electrodes 9a (liquid crystal driving electrodes) are formed in a matrix, and an alignment film 16 as an element substrate-side alignment film is formed on the upper side of the pixel electrodes 9a.

  A dummy pixel formed simultaneously with the pixel electrode 9a in the peripheral area 10b of the square frame shape sandwiched between the image display area 10a and the sealing material 107 in the outer peripheral area 10c on the substrate surface on one side of the element substrate 10. Electrode 9b is formed. In the dummy pixel electrode 9b, adjacent dummy pixel electrodes 9b are connected to each other by a narrow connecting portion 9f (see FIG. 3B). The dummy pixel electrode 9b is applied with the common potential Vcom, and prevents the disorder of the alignment of liquid crystal molecules at the outer peripheral side end of the image display region 10a. Further, the dummy pixel electrode 9b compresses the difference in height between the image display region 10a and the peripheral region 10b when the surface on which the alignment film 16 is formed in the element substrate 10 is flattened by polishing. This contributes to making the surface on which the film is formed flat. In some cases, no potential is applied to the dummy pixel electrode 9b, and the dummy pixel electrode 9b is potentialally floated. Even in this case, the dummy pixel electrode 9b has a height difference between the image display region 10a and the peripheral region 10b. This contributes to compressing the difference in position and making the surface on which the alignment film 16 is formed flat.

  As shown in FIG. 2B, a common electrode 21 (liquid crystal driving electrode) is formed on one side of the counter substrate 20 facing the element substrate 10. The common electrode 21 is formed across the plurality of pixels 100a as substantially the entire surface of the counter substrate 20 or a plurality of strip electrodes.

  Further, a light shielding layer 29 is formed on the lower layer side of the common electrode 21 on one side of the counter substrate 20 facing the element substrate 10, and an alignment film 26 as a counter substrate side alignment film is formed on the surface of the common electrode 21. Are stacked. In this embodiment, the light shielding layer 29 includes a frame portion 29a extending along the outer peripheral edge of the image display region 10a, and a black matrix portion 29b overlapping the inter-pixel region 10f sandwiched between adjacent pixel electrodes 9a. Here, the frame portion 29 a is formed at a position overlapping the dummy pixel electrode 9 b, and the outer peripheral edge of the frame portion 29 a is at a position with a gap between it and the inner peripheral edge of the sealing material 107. Therefore, the frame portion 29a and the sealing material 107 do not overlap.

  As shown in FIGS. 2A, 3A, and 3B, in the liquid crystal panel 100p, on the outer side of the sealing material 107, one surface side of the counter substrate 20 (the surface side facing the element substrate 10). ) Are formed on one side of the element substrate 10 (on the side facing the counter substrate 20). As shown in FIG. The inter-substrate conduction electrode portion 8t is formed as the element substrate-side inter-substrate conduction electrode portion at a position facing the four corners of the counter substrate 20 (inter-substrate conduction electrode portion 25t). The inter-substrate conducting electrode portion 8t is conducted to the constant potential wiring 6t to which the common potential Vcom is applied, and the constant potential wiring 6t is conducted to the common potential applying terminal 102a among the terminals 102.

  Between the inter-substrate conducting electrode portion 8t and the inter-substrate conducting electrode portion 25t, an inter-substrate conducting material 109 containing spherical conductive particles described later is disposed, and the common electrode 21 of the counter substrate 20 is The inter-substrate conduction electrode portion 8t, the inter-substrate conduction material 109, and the inter-substrate conduction electrode portion 25t are electrically connected to the element substrate 10 side. Therefore, the common potential Vcom is applied to the common electrode 21 from the element substrate 10 side.

  The sealing material 107 is provided along the outer peripheral edge of the counter substrate 20 with substantially the same width dimension. For this reason, the sealing material 107 is substantially rectangular. However, the sealing material 107 is provided so as to pass through the inside avoiding the inter-substrate conduction electrode portions 8t and 25t in a region overlapping the corner portion of the counter substrate 20, and the corner portion of the sealing material 107 is substantially arc-shaped. is there.

  In the liquid crystal device 100 having such a configuration, when the pixel electrode 9a and the common electrode 21 are formed of a light-transmitting conductive film, a transmissive liquid crystal device can be configured. On the other hand, of the pixel electrode 9a and the common electrode 21, for example, when the common electrode 21 is formed of a translucent conductive film and formed of the pixel electrode 9a reflective conductive film, a reflective liquid crystal device is configured. Can do. When the liquid crystal device 100 is of a reflective type, the light incident from the counter substrate 20 side of the element substrate 10 and the counter substrate 20 is modulated while being reflected by the element substrate 10 and emitted to display an image. In the case where the liquid crystal device 100 is a transmissive type, for example, light incident from the side of the counter substrate 20 out of the element substrate 10 and the counter substrate 20 is modulated while being transmitted through the element substrate 10 and is displayed. To do.

  The liquid crystal device 100 can be used as a color display device of an electronic device such as a mobile computer or a mobile phone. In this case, a color filter (not shown) is formed on the counter substrate 20 or the element substrate 10. Further, in the liquid crystal device 100, the polarizing film, the retardation film, the polarizing plate, etc. have a predetermined orientation with respect to the liquid crystal panel 100p according to the type of the liquid crystal layer 50 to be used and the normally white mode / normally black mode. Placed in. Furthermore, the liquid crystal device 100 can be used as a light valve for RGB in a projection display device (liquid crystal projector) described later. In this case, each color liquid crystal device 100 for RGB receives light of each color separated through RGB color separation dichroic mirrors as projection light, so that no color filter is formed.

  In this embodiment, the liquid crystal device 100 is a transmissive liquid crystal device used as a RGB light valve in a projection display device described later, and light incident from the counter substrate 20 is transmitted through the element substrate 10 and emitted. The case will be mainly described. Further, in this embodiment, the liquid crystal device 100 will be described focusing on the case where the liquid crystal layer 50 includes a VA mode liquid crystal panel 100p using a nematic liquid crystal compound having a negative dielectric anisotropy.

(Specific pixel configuration)
FIG. 4 is an explanatory diagram of a pixel of the liquid crystal device 100 according to Embodiment 1 of the present invention. FIGS. 4A and 4B are each a plurality of adjacent elements in the element substrate 10 used in the liquid crystal device 100. FIG. FIG. 4 is a plan view of a pixel and a cross-sectional view when the liquid crystal device 100 is cut at a position corresponding to a line FF ′. In FIG. 4A, the semiconductor layer 1a is indicated by a thin and short dotted line, the scanning line 3a is indicated by a thick solid line, the data line 6a and a thin film formed simultaneously with it are indicated by a one-dot chain line, and the capacitance line 5b is indicated by two lines. The pixel electrode 9a is indicated by a long broken line, and the lower electrode layer 4a is indicated by a thin solid line. In the element substrate 10, the dielectric layer 42 a is formed. However, since the dielectric layer 42 a is formed in a region overlapping with the capacitor line 5 b, the illustration is omitted in FIG. Further, although there is an opening edge of the etching stopper layer 40a along the outer peripheral edge of the lower electrode layer 4a, the opening edge is not shown in FIG.

  As shown in FIG. 4A, a rectangular pixel electrode 9a is formed on each of the plurality of pixels 100a on one side of the element substrate 10 facing the counter substrate 20, and adjacent pixels are arranged. A data line 6a and a scanning line 3a are formed along the inter-pixel region 10f overlapping the region sandwiched between the electrodes 9a. In this embodiment, the inter-pixel region 10f extends vertically and horizontally, and the scanning line 3a and the data line 6a are linearly formed so as to overlap the inter-pixel region 10f. A pixel transistor 30 is formed corresponding to the intersection of the data line 6a and the scanning line 3a. In this embodiment, the pixel transistor 30 is formed in a region where the data line 6a and the scanning line 3a intersect. Yes. A capacitance line 5b is formed on the element substrate 10 so as to overlap the scanning line 3a, and a common potential Vcom is applied to the capacitance line 5b. In this embodiment, the capacitor line 5b includes a main line portion extending linearly so as to overlap the scanning line 3a, and a sub-line portion extending so as to overlap the data line 6a at the intersection of the data line 6a and the scanning line 3a. It has.

  As shown in FIG. 4B, the element substrate 10 is formed on a liquid crystal layer 50 side substrate surface (one surface side facing the counter substrate 20) of a translucent substrate body 10w such as a quartz substrate or a glass substrate. The pixel electrode 9a, the pixel transistor 30 for pixel switching, and the alignment film 16 are mainly configured. The counter substrate 20 includes a translucent substrate body 20w such as a quartz substrate or a glass substrate, a light shielding layer 29 formed on the surface of the liquid crystal layer 50 side (one side facing the element substrate 10), the common electrode 21, And the alignment film 26 as a main component.

  In the element substrate 10, a pixel transistor 30 including the semiconductor layer 1a is formed in each of the plurality of pixels 100a. The semiconductor layer 1a includes a channel region 1g, a source region 1b, and a drain region 1c that are opposed to the gate electrode 3c, which is a part of the scanning line 3a, via the translucent gate insulating layer 2. The source region 1b and the drain region 1c each have a low concentration region and a high concentration region. The semiconductor layer 1a is composed of, for example, a polycrystalline silicon film or the like formed on a transparent base insulating film 12 made of a silicon oxide film or the like on the substrate body 10w, and the gate insulating layer 2 is formed by a CVD method or the like. The silicon oxide film and the silicon nitride film formed by the above. The gate insulating layer 2 may have a two-layer structure of a silicon oxide film obtained by thermally oxidizing the semiconductor layer 1a and a silicon oxide film or silicon nitride film formed by a CVD method or the like. For the scanning line 3a, a conductive polysilicon film, a metal silicide film, or a metal film is used. In the case where a light shielding layer overlapping the scanning line 3a is formed between the substrate body 10w and the base insulating film 12 or between the two layers of the base insulating film 12, the light shielding layer is referred to as the scanning line 3a. A structure in which the gate electrode 3c is electrically connected may be employed.

  A translucent first interlayer insulating film 41 made of a silicon oxide film or the like is formed on the upper layer side of the scanning line 3a, and a lower electrode layer 4a is formed on the upper layer of the first interlayer insulating film 41. The lower electrode layer 4a is formed in a substantially L-shape extending along the scanning line 3a and the data line 6a with a position where the scanning line 3a and the data line 6a intersect as a base point. The lower electrode layer 4a is made of a conductive polysilicon film, a metal silicide film, a metal film, or the like, and is electrically connected to the drain region 1c through the contact hole 7c.

  On the upper layer side of the lower electrode layer 4a, a dielectric layer 42a made of an insulating film having a high dielectric constant such as an aluminum oxide film, a titanium oxide film, a tantalum oxide film, a niobium oxide film, a hafnium oxide film, a lanthanum oxide film, or a zirconium oxide film. Is formed. On the upper layer side of the dielectric layer 42a, a capacitor line 5b is formed so as to face the lower electrode layer 4a through the dielectric layer 42a. The capacitor line 5b, the dielectric layer 42a and the lower electrode layer 4a hold the capacitor line 5b. A capacitor 55 is formed. The capacitor line 5b is made of a conductive polysilicon film, a metal silicide film, a metal film, or the like. Here, the lower electrode layer 4 a, the dielectric layer 42 a, and the capacitor line 5 b are formed on the upper layer side of the pixel transistor 30, and the storage capacitor 55 is planar with respect to at least the pixel transistor 30 on the upper layer side of the pixel transistor 30. It is formed in a region that overlaps visually.

  In this embodiment, the dielectric layer 42a has substantially the same shape as the capacitor line 5b and is formed in the same region. Further, the end edge 42e of the dielectric layer 42a and the end edge 5e of the capacitance line 5b are at positions overlapping the lower electrode layer 4a. An etching stopper layer 40a made of a silicon oxide film or the like is formed between the lower electrode layer 4a and the dielectric layer 42a, and the etching stopper layer 40a is a region partially overlapping the lower electrode layer 4a. An opening 40b is formed in the opening. For this reason, the lower electrode layer 4a and the capacitor line 5b are opposed to each other through the dielectric layer 42a in the opening 40b to form a storage capacitor 55. The etching stopper layer 40a is formed in a region that overlaps at least the edge 42e of the dielectric layer 42a and the edge 5e of the capacitance line 5b.

  A translucent second interlayer insulating film 43 made of a silicon oxide film or the like is formed on the upper side of the capacitor line 5b, and a data line 6a and a drain electrode 6b are formed on the upper layer of the second interlayer insulating film 43. Yes. Data line 6a is electrically connected to source region 1b through contact hole 7a. The drain electrode 6b is electrically connected to the lower electrode layer 4a through the contact hole 7b, and is electrically connected to the drain region 1c through the lower electrode layer 4a. The data line 6a and the drain electrode 6b are made of a conductive polysilicon film, a metal silicide film, a metal film, or the like.

  A light-transmitting third interlayer insulating film 44 made of a silicon oxide film or the like is formed on the upper side of the data line 6a and the drain electrode 6b. In the third interlayer insulating film 44, a contact hole 7d leading to the drain electrode 6b is formed. Over the third interlayer insulating film 44, a pixel electrode 9a made of a light-transmitting conductive film such as an ITO (Indium Tin Oxide) film as a metal oxide layer is formed. The pixel electrode 9a is connected to the contact hole 7d. Is electrically connected to the drain electrode 6b. In this embodiment, the surface of the third interlayer insulating film 44 is a flat surface. A dummy pixel electrode 9b (not shown in FIG. 4A) described with reference to FIG. 2B or the like is formed on the surface of the third interlayer insulating film 44, and the dummy pixel electrode 9b Consists of a translucent conductive film formed simultaneously with the pixel electrode 9a.

An alignment film 16 is formed on the surface of the pixel electrode 9a. In this embodiment, the alignment film 16 is an obliquely deposited film of SiO _x (x <2), SiO ₂ , TiO ₂ , MgO, Al ₂ O ₃ , In ₂ O ₃ , Sb ₂ O ₃ , Ta ₂ O ₅ or the like. A transparent protective film 17 such as a silicon oxide film or a silicon nitride film is formed between the alignment film 16 and the pixel electrode 9a. In this embodiment, the alignment film 16 is composed of an oblique vapor deposition film of a silicon oxide film. The protective film 17 has a flat surface, and fills a recess formed between adjacent pixel electrodes 9a. Therefore, the alignment film 16 is formed on the flat surface of the protective film 17.

  In the counter substrate 20, aluminum, titanium, molybdenum, tungsten, chrome, and the like are formed on the surface of the translucent substrate body 20 w such as a quartz substrate or a glass substrate on the liquid crystal layer 50 side (surface facing the element substrate 10). A conductive light shielding layer 29 made of a compound, an alloy, or the like is formed, and the black matrix portion 29b formed in the image display area 10a of the light shielding layer 29 includes an inter-pixel area 10f (see FIG. 3 and the like). It extends vertically and horizontally at a position that overlaps with (see).

In this embodiment, an aluminum alloy layer (aluminum metal layer) is used for the light shielding layer 29. A common electrode 21 is formed on the upper layer of the light shielding layer 29 (the surface facing the element substrate 10), and the common electrode 21 is made of an ITO film. An alignment film 26 is formed on the upper layer of the light shielding layer 29 (the surface facing the element substrate 10). The alignment film 26 is similar to the alignment film 16, and is composed of SiO _x (x <2), SiO ₂ , TiO ₂ . ₂ , an inorganic alignment film (vertical alignment film) made of an obliquely deposited film such as MgO, Al ₂ O ₃ , In ₂ O ₃ , Sb ₂ O ₃ , Ta ₂ O ₅ . In this embodiment, the alignment film 26 is composed of an oblique vapor deposition film of a silicon oxide film.

  In the liquid crystal device 100 configured as described above, a nematic liquid crystal compound having a negative dielectric anisotropy is used as a liquid crystal material. The alignment films 16 and 26 vertically align the liquid crystal material, and the liquid crystal panel 100p is normally aligned. Operate as a black VA mode.

  Note that the data line driving circuit 101 and the scanning line driving circuit 104 described with reference to FIG. 1 and the like include a complementary transistor circuit including an N-channel driving transistor and a P-channel driving transistor. It is configured. Here, the driving transistor is formed by utilizing a part of the manufacturing process of the pixel transistor 30. Therefore, the region where the data line driving circuit 101 and the scanning line driving circuit 104 are formed on the element substrate 10 also has a cross-sectional configuration substantially similar to the cross-sectional configuration shown in FIG.

(Configuration of inter-substrate conduction electrode portions 8t, 25t, etc.)
FIG. 5 is a cross-sectional view of the liquid crystal device 100 according to Embodiment 1 of the present invention cut at a position passing through the inter-substrate conduction electrode portions 8t and 25t. In this embodiment, as will be described below with reference to FIG. 5, in at least one of the pair of substrates including the element substrate 10 and the counter substrate 20, the alignment film covers the surface of the inter-substrate conduction electrode portion. It is an inorganic alignment film to cover. Further, in such a substrate, the inter-substrate conduction electrode portion is formed of a metal film layer having a hardness lower than that of the spherical conductive particles 209b, and one electrode is disposed at each location of the inter-substrate conduction electrode portion. The spherical conductive particles 109b thus formed penetrate the inorganic alignment film and are electrically connected to the metal film layer. As described above, since the inter-substrate conduction electrode portion is formed of a metal film layer having a hardness lower than that of the spherical conductive particle 209b, one electrode is usually provided at one location of the inter-substrate conduction electrode portion for inter-substrate conduction. Even a spherical conductive member (a so-called conductive member called a silver point) that is used each time can break through the inorganic alignment film and come into contact with the metal film layer to achieve electrical conduction.

  More specifically, as shown in FIG. 5, in the element substrate 10, the terminal 102 described with reference to FIG. 2 and the like is made of an aluminum alloy film or the like formed on the surface of the third interlayer insulating film 44. Of the terminals 102, the common potential supply terminal 102 a is connected to the constant potential wiring 6 t extending on the surface of the second interlayer insulating film 43 through the contact hole 7 t formed in the third interlayer insulating film 44. Is conducting. Further, a part of the constant potential wiring 6t is opened by an opening 7s formed in the third interlayer insulating film 44, and the inter-substrate conduction electrode portion 8t is formed by the opening of the constant potential wiring 6t. ing. In this embodiment, the constant potential wiring 6t and the inter-substrate conduction electrode portion 8t are made of an aluminum alloy film (aluminum metal film) formed simultaneously with the data line 6a and the like.

  An alignment film 16 is formed on the outermost surface of the element substrate 10. In this embodiment, the alignment film 16 is formed by mask vapor deposition in a state where the terminals 102 and the inter-substrate conduction electrode portion 8 t are covered with a mask. This is an oblique deposition film of a silicon oxide film. For this reason, the alignment film 16 is not formed on the surface of the terminal 102 or the surface of the inter-substrate conduction electrode portion 8t.

  In the counter substrate 20, the common electrode 21 is removed at the corner portion, and an aluminum alloy film (aluminum metal film) constituting the light shielding layer 29 is formed as the inter-substrate conduction electrode portion 25t. Here, the inter-substrate conduction electrode portion 25t is not connected to the other light shielding layer 29 (the frame portion 29a or the black matrix portion 29b), and the light shielding layer 29 is not formed in a region overlapping the sealing material 107. For this reason, a photocurable resin is used as the sealing material 107, and when the UV irradiation is performed from the counter substrate 20 side, the light shielding layer 29 does not hinder the photocuring of the sealing material 107. However, since the end portion of the inter-substrate conduction electrode portion 25t overlaps the common electrode 21, the inter-substrate conduction electrode portion 25t and the common electrode 21 are electrically connected.

  An alignment film 26 is formed on the outermost surface of the counter substrate 20. In this embodiment, the alignment film 26 is an oblique vapor deposition film of a silicon oxide film formed without using a mask, and is formed on the entire surface of the counter substrate 20. For this reason, the alignment film 26 also covers the surface of the inter-substrate conduction electrode portion 25t.

  In the liquid crystal device 100 configured as described above, as will be described later, the element substrate 10 and the element substrate 10 in a state where the inter-substrate conductive material 109 including spherical conductive particles 109b is disposed between the element substrate 10 and the counter substrate 20. The counter substrate 20 is bonded, and the spherical conductive particles 109b are in contact with the inter-substrate conduction electrode portions 8t and 25t. More specifically, the inter-substrate conductive material 109 includes conductive particles 109b in which the surface of particles such as spherical glass fibers is coated with a metal film such as gold and a conductive paste 109d, and is opposed to the element substrate 10. When the substrate 20 is bonded, one spherical conductive particle 109b is in contact with the inter-substrate conduction electrode portion 8t. At that time, the inter-substrate conducting electrode portion 8t made of an aluminum alloy film (Mohs hardness = about 2.9) is softer than the glass fiber (Mohs hardness = about 5) used for the spherical conductive particles 109b. The conductive particles 109b bite into the inter-substrate conduction electrode portion 8t and become conductive with the inter-substrate conduction electrode portion 8t.

  On the opposite substrate 20 side, the surface of the inter-substrate conduction electrode portion 25t is covered with the alignment film 26, but the inter-substrate conduction electrode portion 25t made of an aluminum alloy film (Mohs hardness = about 2.9) Softer than the spherical glass fiber (glass beads / Mohs hardness = about 5) used for the spherical conductive particles 109b. For this reason, when the element substrate 10 and the counter substrate 20 are bonded together, the alignment film 26 is pressed by the spherical conductive particles 209b. Here, an inter-substrate conduction electrode portion 25t that is softer than the glass fiber used for the spherical conductive particles 109b is positioned below the alignment film 26. For this reason, the alignment film 26 is partially broken by the pressing force of the spherical conductive particles 109b. Accordingly, the spherical conductive particles 109b break through the alignment film 26 and bite into the inter-substrate conduction electrode portion 25t, and become conductive with the inter-substrate conduction electrode portion 25t. Therefore, the conductive particles 109b are electrically connected to both the terminal 102a and the common electrode 21. Therefore, the common potential Vcom supplied from the terminal 102a is applied to the common electrode 21 via the constant potential wiring 6t, the inter-substrate conduction electrode portion 8t, the conductive particles 109b, and the inter-substrate conduction electrode portion 8t.

(Manufacturing method of the liquid crystal device 1)
FIG. 6 is an explanatory diagram showing a manufacturing process of the liquid crystal device 1 according to Embodiment 1 of the present invention. FIGS. 7A and 7B are process cross-sectional views illustrating the substrate forming process of the liquid crystal device 1 according to the first embodiment of the present invention. FIGS. 7A and 7B illustrate the formation of the pixel electrode 9a and the common electrode 21. FIG. FIG. 6 is an explanatory diagram of a state where the alignment films 16 and 26 have been formed. FIGS. 8A and 8B are process cross-sectional views illustrating the bonding process of the liquid crystal device 1 according to Embodiment 1 of the present invention. FIGS. 8A and 8B are applied with the sealing material 107 and the inter-substrate conductive material 109. It is explanatory drawing of the state which finished, and explanatory drawing of the state which overlap | superposed the element substrate 10 and the opposing board | substrate 20. FIG. In the following description, a large panel is formed using a large substrate on which a large number of element substrates 10 and counter substrates 20 can be obtained, and then cut into single products. However, in the following description, the large substrate used for forming the element substrate 10 is also described as the element substrate 10, and the large substrate used for forming the counter substrate 20 is also described as the counter substrate 20.

  In order to manufacture the liquid crystal device 1 of the present embodiment, as shown in FIG. 6 and the like, first, the element substrate 10 and the counter substrate 20 are formed in the substrate forming step. For this purpose, as shown in FIG. 7A, after the formation step S1 of the pixel electrode 9a and the like is performed on the element substrate 10, as shown in FIG. 7B, the alignment film 16 is formed by oblique vapor deposition. An alignment film forming step S2 for forming is performed. At that time, an oblique deposition film (alignment film 16) of a silicon oxide film is formed by mask deposition in a state where the terminals 102 of the element substrate 10 and the inter-substrate conduction electrode portion 8t are covered with a mask. For this reason, the alignment film 16 is not formed on the surface of the terminal 102 or the surface of the inter-substrate conduction electrode portion 8t. Further, as shown in FIG. 7A, the counter substrate 20 is subjected to the formation step S11 of the common electrode 21 and the like, and then, as shown in FIG. Alignment film forming step S12 for forming 26 is performed. At this time, an oblique deposition film (alignment film 26) of a silicon oxide film is formed without using a mask. Therefore, the alignment film 26 is formed on the entire surface of the counter substrate 20 and covers the surface of the inter-substrate conduction electrode portion 25t.

  Next, a bonding process for bonding the element substrate 10 and the counter substrate 20 is performed. First, as shown in FIG. 8A, a sealing material / inter-substrate conducting material application step S3 for applying the sealing material 107 and the inter-substrate conducting material 109 to the element substrate 10 is performed. Application of the sealing material 107 draws the sealing material 107 in a rectangular frame shape by relatively moving the nozzle and the element substrate 10 while discharging the sealing material 107 from the nozzle. Application of the inter-substrate conductive material 109 is performed by moving the nozzle and the element substrate 10 relative to each other while discharging the inter-substrate conductive material 109 from the nozzle so that the inter-substrate conductive material 109 is formed on the inter-substrate conductive electrode 8t. Deploy. Note that the sealing material 107 and the inter-substrate conductive material 109 may be applied to the counter substrate 20 side. Next, as shown in FIG. 8B, the element substrate 10 and the counter substrate 20 are overlapped with the sealing material 107 and the inter-substrate conductive material 109 interposed therebetween. Next, the element substrate 10 and the counter substrate 20 are pressed to face the element substrate 10 until the gap material 107a of the sealant 107 abuts both the element substrate 10 and the counter substrate 20, as shown in FIG. After narrowing the gap with the substrate 20, a sealing material / inter-substrate conductive material curing step S <b> 22 is performed.

  In the sealing material / inter-substrate conducting material curing step S22, the sealing material 107 is cured by irradiating UV light or the like from the counter substrate 20 side. Further, the inter-substrate conductive material 109 is cured by moderate heating. At that time, since the conductive particles 109b have a larger diameter than the gap material 107a, the gap between the element substrate 10 and the counter substrate 20 is maintained until the gap material 107a of the sealant 107 abuts both the element substrate 10 and the counter substrate 20. Is narrowed, on the element substrate 10 side, the conductive particles 109b bite into the inter-substrate conduction electrode portion 8t and become conductive with the inter-substrate conduction electrode portion 8t. Further, on the element substrate 10 side, the conductive particles 109b penetrate the alignment film 26 and bite into the inter-substrate conduction electrode portion 25t to be conducted with the inter-substrate conduction electrode portion 25t.

  Thereafter, a panel cutting step S23 for cutting the panel on which the large element substrate 10 and the large counter substrate 20 are bonded to a single product size is performed, and then a liquid crystal sealing step S24 is performed. In the liquid crystal sealing step S24, the liquid crystal is supplied to the interrupted portion of the sealing material 107 in a reduced pressure atmosphere, and then the reduced pressure state is released. As a result, liquid crystal is injected inside the sealing material 107. After the liquid crystal injection is completed, the interrupted portion of the sealing material 107 is sealed with a sealing material 107c (see FIG. 2A).

  In addition, in the sealing / substrate conducting material application step S3, after forming the sealing material 107 shown in FIG. 1 without providing a discontinuous portion, the liquid crystal is dropped in the region surrounded by the sealing material 107, and then applied. In the alignment step S <b> 20, the counter substrate 20 may be stacked and bonded with the sealant 107. In the case of such a method, the bonding step S20 and the liquid crystal sealing step S24 are performed at the same time, so that the panel cutting step S23 is performed after the liquid crystal sealing step S24.

(Main effects of this form)
As described above, in the liquid crystal device 100 of the present embodiment, the alignment film 26 covers the surface of the inter-substrate conduction electrode portion 25t in the counter substrate 20 out of the pair of substrates including the element substrate 10 and the counter substrate 20. The inter-substrate conduction electrode portion 25t is an alignment film, and is formed of an aluminum alloy film having a hardness lower than that of the conductive particles 209b. For this reason, the conductive particles 109b penetrate the alignment film 26 and bite into the inter-substrate conduction electrode portion 25t, and are electrically connected to the inter-substrate conduction electrode portion 25t. Therefore, in the counter substrate 20, the alignment film 26 can be formed on the entire surface, and it is not necessary to perform mask vapor deposition.

  Further, in the present embodiment, in the counter substrate 20, a light shielding layer 29 made of an aluminum alloy film is formed on the opposite side (lower layer side) to the side where the element substrate 10 is located with respect to the common electrode 21. The conductive electrode portion 25t is a region where the common electrode 21 is not formed. For this reason, the aluminum alloy film can be provided on the inter-substrate conduction electrode portion 25t by using the formation process of the aluminum alloy film used for the light shielding layer 29.

  In this embodiment, the surface of the inter-substrate conduction electrode portion 8t of the element substrate 10 is not covered with the alignment film 16, but the inter-substrate conduction electrode portion 25t is formed of an aluminum alloy film having a hardness lower than that of the conductive particles 209b. Therefore, the conductive particles 109b bite into the inter-substrate conduction electrode portion 8t and are electrically connected to the inter-substrate conduction electrode portion 8t. For this reason, even when the alignment film 16 is formed on the surface of the inter-substrate conduction electrode portion 8t due to the low accuracy of the vapor deposition mask when the alignment film 16 is mask-deposited, the conductive particles 109b remain on the substrate. Conductivity is reliably established with the inter-electrode part 8t. For this reason, the reliability of the conduction | electrical_connection part between board | substrates is high.

  In this embodiment, since the aluminum alloy film is used as the metal film for the inter-substrate conduction electrode portions 8t and 25t, the reliability of the inter-substrate conduction portion is high. In other words, since the aluminum alloy film has a soft Mohs hardness of about 2.9, the conductive particles 109b are likely to bite, so that the conductive particles 109b are reliably connected to the inter-substrate conductive electrode portions 8t and 25t. On the other hand, since the surfaces of the conductive particles 109b and the glass fibers are coated with metal, the reliability of the conductive part between the substrates is high. That is, since the glass fiber has a Mohs hardness of about 5, it is easy to bite into the inter-substrate conduction electrode portions 8t and 25t, so that the conductive particles 109b are reliably conducted to the inter-substrate conduction electrode portions 8t and 25t.

[Embodiment 2]
FIG. 9 is a cross-sectional view when the liquid crystal device 100 according to the second embodiment of the present invention is cut at a position passing through the inter-substrate conduction electrode portions 8t and 25t. Since the basic configuration of this embodiment is the same as that of Embodiment 1, common portions are denoted by the same reference numerals and description thereof is omitted.

  In the first embodiment, the light shielding layer 29, the common electrode 21, and the alignment film 26 are formed in this order on the one surface side of the counter substrate 20. In this embodiment, as shown in FIG. A light shielding layer 29, an insulating film 27 made of a silicon oxide film, the common electrode 21, and an alignment film 26 are formed in this order on one surface side. Here, the insulating film 27 is formed only in a region overlapping with the common electrode 21, and is not formed in a region where the inter-substrate conduction electrode portion 25t is formed. Since other configurations are the same as those of the first embodiment, description thereof is omitted.

  According to such a configuration, the step caused by the black matrix portion 29 b (see FIG. 4B and the like) of the light shielding layer 29 is alleviated by the insulating film 27. Accordingly, it is possible to prevent the step of the common electrode 21 from being cut and to form the alignment film 26 made of the obliquely deposited film in a relatively flat region.

[Embodiment 3]
FIG. 10 is a cross-sectional view of the liquid crystal device 100 according to Embodiment 3 of the present invention cut at a position passing through the inter-substrate conduction electrode portions 8t and 25t. Since the basic configuration of this embodiment is the same as that of Embodiment 1, common portions are denoted by the same reference numerals and description thereof is omitted.

  In the first embodiment, only on the counter substrate 20 side, the conductive particles 109b penetrate the alignment film 26 and bite into the inter-substrate conduction electrode portion 25t, and are electrically connected to the inter-substrate conduction electrode portion 25t. It was. On the other hand, in this embodiment, as shown in FIG. 10, the alignment film 16 is an inorganic alignment film that covers the surface of the inter-substrate conduction electrode portion 8 t as well as the counter substrate 20 on the element substrate 10 side. The inter-substrate conduction electrode portion 8t is formed of an aluminum alloy film having a hardness lower than that of the conductive particles 109b. For this reason, the conductive particles 109b penetrate the alignment film 16 and bite into the inter-substrate conduction electrode portion 8t, and are electrically connected to the inter-substrate conduction electrode portion 8t. Since other configurations are the same as those of the first embodiment, description thereof is omitted.

  According to such a configuration, when the alignment film 16 is deposited, the inter-substrate conduction electrode portion 8t does not need to be covered with the mask. Therefore, the mask used for depositing the alignment film 16 only needs to cover the terminals 102, and thus the mask configuration can be simplified. 10 is based on the first embodiment, but in the configuration in which the insulating film 27 is formed between the light shielding layer 29 and the common electrode 21 as in the second embodiment, the embodiment shown in FIG. The configuration described in the third embodiment may be applied.

[Other embodiments]
In the above embodiment, a single-layer film of an aluminum alloy layer (aluminum-based metal layer) is used as the light shielding layer 29. However, in the light shielding layer 29, the upper layer side (surface side) with respect to the aluminum alloy layer. A configuration in which a barrier layer such as a titanium nitride film is formed may be employed. According to such a configuration, it is possible to avoid the occurrence of problems such as corrosion of the aluminum-based metal layer when the resist mask is peeled when the light shielding layer 29 is patterned by photolithography. Further, when the common electrode 21 and the like are patterned by photolithography, the light shielding layer 29 made of an aluminum-based metal layer has an effect that does not corrode. As the light shielding layer 29, a three-layer structure including a titanium nitride film, an aluminum alloy layer, and a titanium nitride film may be employed. In such a configuration, reflection at the light shielding layer 29 can be prevented, and generation of stray light can be prevented.

  In the above embodiment, the aluminum alloy layer (aluminum-based metal layer) is exemplified as the metal layer softer than the conductive particles 109b. However, as the metal layer softer than the conductive particles 109b, a copper-based metal layer (Mohs hardness = about 3) or A silver-based metal layer (Mohs hardness = about 2.7) may be used.

  In the above embodiment, the transmissive liquid crystal device 100 is illustrated, but the present invention may be applied to the reflective liquid crystal device 100.

[Example of mounting on electronic devices]
An electronic apparatus to which the liquid crystal device 100 according to the above-described embodiment is applied will be described. FIG. 11 is a schematic configuration diagram of a projection type display device using a liquid crystal device to which the present invention is applied. FIGS. 11A and 11B are each a projection type display device using a transmission type liquid crystal device 100. FIG. 5 is an explanatory diagram of the projection type display device using the reflective liquid crystal device 100. FIG.

(First example of projection display device)
A projection display device 110 shown in FIG. 11A is a so-called projection-type projection display device that irradiates light onto a screen 111 provided on the viewer side and observes light reflected by the screen 111. . The projection display device 110 includes a light source unit 130 including a light source 112, dichroic mirrors 113 and 114, liquid crystal light valves 115 to 117 (liquid crystal device 100), a projection optical system 118, a cross dichroic prism 119, and a relay. System 120.

  The light source 112 is composed of an ultrahigh pressure mercury lamp that supplies light including red light, green light, and blue light. The dichroic mirror 113 is configured to transmit red light from the light source 112 and reflect green light and blue light. The dichroic mirror 114 is configured to transmit blue light and reflect green light among the green light and the blue light reflected by the dichroic mirror 113. Thus, the dichroic mirrors 113 and 114 constitute a color separation optical system that separates the light emitted from the light source 112 into red light, green light, and blue light.

  Here, between the dichroic mirror 113 and the light source 112, an integrator 121 and a polarization conversion element 122 are sequentially arranged from the light source 112. The integrator 121 is configured to uniformize the illuminance distribution of the light emitted from the light source 112. Further, the polarization conversion element 122 is configured to change the light from the light source 112 into polarized light having a specific vibration direction such as s-polarized light.

  The liquid crystal light valve 115 is a transmissive liquid crystal device 100 that modulates red light transmitted through the dichroic mirror 113 and reflected by the reflection mirror 123 in accordance with an image signal. The liquid crystal light valve 115 includes a λ / 2 phase difference plate 115a, a first polarizing plate 115b, a liquid crystal panel 115c, and a second polarizing plate 115d. Here, the red light incident on the liquid crystal light valve 115 remains s-polarized light because the polarization of the light does not change even if it passes through the dichroic mirror 113.

  The λ / 2 phase difference plate 115a is an optical element that converts s-polarized light incident on the liquid crystal light valve 115 into p-polarized light. The first polarizing plate 115b is a polarizing plate that blocks s-polarized light and transmits p-polarized light. The liquid crystal panel 115c is configured to convert p-polarized light into s-polarized light (circularly polarized light or elliptically polarized light in the case of halftone) by modulation according to the image signal. Furthermore, the second polarizing plate 115d is a polarizing plate that blocks p-polarized light and transmits s-polarized light. Therefore, the liquid crystal light valve 115 is configured to modulate the red light in accordance with the image signal and to emit the modulated red light toward the cross dichroic prism 119.

  Note that the λ / 2 phase difference plate 115a and the first polarizing plate 115b are disposed in contact with a light-transmitting glass plate 115e that does not convert polarized light, and the λ / 2 phase difference plate 115a and the first polarizing plate 115b. It is possible to avoid distortion of 115b due to heat generation.

  The liquid crystal light valve 116 is a transmissive liquid crystal device 100 that modulates green light reflected by the dichroic mirror 114 after being reflected by the dichroic mirror 113 in accordance with an image signal. Similarly to the liquid crystal light valve 115, the liquid crystal light valve 116 includes a first polarizing plate 116b, a liquid crystal panel 116c, and a second polarizing plate 116d. Green light incident on the liquid crystal light valve 116 is s-polarized light that is reflected by the dichroic mirrors 113 and 114 and then incident. The first polarizing plate 116b is a polarizing plate that blocks p-polarized light and transmits s-polarized light. The liquid crystal panel 116c is configured to convert s-polarized light into p-polarized light (circularly polarized light or elliptically polarized light in the case of halftone) by modulation according to the image signal. The second polarizing plate 116d is a polarizing plate that blocks s-polarized light and transmits p-polarized light. Accordingly, the liquid crystal light valve 116 is configured to modulate green light in accordance with the image signal and to emit the modulated green light toward the cross dichroic prism 119.

  The liquid crystal light valve 117 is a transmissive liquid crystal device 100 that modulates blue light reflected by the dichroic mirror 113 and transmitted through the dichroic mirror 114 and then through the relay system 120 in accordance with an image signal. Similarly to the liquid crystal light valves 115 and 116, the liquid crystal light valve 117 includes a λ / 2 retardation film 117a, a first polarizing plate 117b, a liquid crystal panel 117c, and a second polarizing plate 117d. Here, since the blue light incident on the liquid crystal light valve 117 is reflected by the two reflecting mirrors 125a and 125b described later of the relay system 120 after being reflected by the dichroic mirror 113 and transmitted through the dichroic mirror 114, the s-polarized light is reflected. It has become.

  The λ / 2 phase difference plate 117a is an optical element that converts s-polarized light incident on the liquid crystal light valve 117 into p-polarized light. The first polarizing plate 117b is a polarizing plate that blocks s-polarized light and transmits p-polarized light. The liquid crystal panel 117c is configured to convert p-polarized light into s-polarized light (circularly polarized light or elliptically polarized light in the case of halftone) by modulation according to the image signal. Furthermore, the second polarizing plate 117d is a polarizing plate that blocks p-polarized light and transmits s-polarized light. Accordingly, the liquid crystal light valve 117 is configured to modulate blue light in accordance with an image signal and to emit the modulated blue light toward the cross dichroic prism 119. The λ / 2 phase difference plate 117a and the first polarizing plate 117b are disposed in contact with the glass plate 117e.

  The relay system 120 includes relay lenses 124a and 124b and reflection mirrors 125a and 125b. The relay lenses 124a and 124b are provided to prevent light loss due to a long blue light path. Here, the relay lens 124a is disposed between the dichroic mirror 114 and the reflection mirror 125a. The relay lens 124b is disposed between the reflection mirrors 125a and 125b. The reflection mirror 125a is disposed so as to reflect the blue light transmitted through the dichroic mirror 114 and emitted from the relay lens 124a toward the relay lens 124b. The reflection mirror 125b is arranged to reflect the blue light emitted from the relay lens 124b toward the liquid crystal light valve 117.

  The cross dichroic prism 119 is a color combining optical system in which two dichroic films 119a and 119b are arranged orthogonally in an X shape. The dichroic film 119a is a film that reflects blue light and transmits green light, and the dichroic film 119b is a film that reflects red light and transmits green light. Therefore, the cross dichroic prism 119 is configured to combine the red light, the green light, and the blue light modulated by the liquid crystal light valves 115 to 117 and emit the resultant light toward the projection optical system 118.

  Note that light incident on the cross dichroic prism 119 from the liquid crystal light valves 115 and 117 is s-polarized light, and light incident on the cross dichroic prism 119 from the liquid crystal light valve 116 is p-polarized light. Thus, by making the light incident on the cross dichroic prism 119 different types of polarized light, the light incident from the liquid crystal light valves 115 to 117 in the cross dichroic prism 119 can be effectively combined. Here, in general, the dichroic films 119a and 119b are excellent in the reflection characteristics of s-polarized light. Therefore, red light and blue light reflected by the dichroic films 119a and 119b are s-polarized light, and green light transmitted through the dichroic films 119a and 119b is p-polarized light. The projection optical system 118 has a projection lens (not shown) and is configured to project the light combined by the cross dichroic prism 119 onto the screen 111.

(Second example of projection display device)
In the projection display apparatus 1000 shown in FIG. 11B, the light source unit 890 includes a polarization illumination apparatus 800 in which a light source 810, an integrator lens 820, and a polarization conversion element 830 are arranged along the system optical axis L. . In addition, the projection display apparatus 1000 includes a polarization beam splitter 840 that reflects the S-polarized light beam emitted from the polarization illumination device 800 along the system optical axis L by the S-polarized light beam reflection surface 841, and S of the polarization beam splitter 840. Of the light reflected from the polarized light beam reflecting surface 841, the dichroic mirror 842 that separates the blue light (B) component and the red light (R) component of the light flux after the blue light is separated are reflected. And a dichroic mirror 843 for separation.

  The projection display device 1000 includes three reflective liquid crystal devices 100 (liquid crystal devices 100R, 100G, and 100B) on which each color light is incident, and the light source unit 890 includes three liquid crystal devices 100 (liquid crystal devices 100R). , 100G, 100B).

  In the projection display apparatus 1000, the light modulated by the three liquid crystal devices 100R, 100G, and 100B is synthesized by the dichroic mirrors 842 and 843 and the polarization beam splitter 840, and then the synthesized light is projected by the projection optical system 850. Is projected onto a projection target member such as a screen 860.

(Other projection display devices)
In addition, about a projection type display apparatus, you may comprise the LED light source etc. which radiate | emit the light of each color as a light source part, and supply each color light radiate | emitted from this LED light source to another liquid crystal device. .

(Other electronic devices)
As for the liquid crystal device 100 to which the present invention is applied, in addition to the electronic devices described above, mobile phones, personal digital assistants (PDAs), digital cameras, liquid crystal televisions, car navigation devices, video phones, POS terminals, You may use as a direct view type | mold display apparatus in electronic devices, such as an apparatus provided with the touch panel.

  9a ··· Pixel electrode (liquid crystal driving electrode), 8t · · Inter-substrate conduction electrode (element substrate side inter-substrate conduction electrode), 10 · · Element substrate, 10a · · Image display area, 16 · · Orientation film ( Element substrate side alignment film), 20 .. counter substrate, 21 .. common electrode (liquid crystal drive electrode), 25 t .. inter-substrate conduction electrode (counter substrate side substrate conduction electrode), 26. Opposite substrate side alignment film), 27..Insulating layer, 29..Light shielding layer, 29a..Frame portion, 29b..Black matrix portion, 50..Liquid crystal layer, 109..Conductor between substrates, 109b..Sphere Shaped conductive particles, 110, 1000 ... projection type display device.

Claims (11)

A pair of substrates each provided with a liquid crystal driving electrode, an inter-substrate conduction electrode portion, and an alignment film covering the liquid crystal driving electrode on each opposing substrate surface;
One spherical conductive particle with respect to one location of the inter-substrate conduction electrode portion and the inter-substrate conduction electrode portion interposed between the pair of substrates,
In a liquid crystal device having
In at least one of the pair of substrates,
The inter-substrate conduction electrode part is formed from a metal film layer having a hardness lower than that of the spherical conductive particles,
The alignment film made of an inorganic alignment film is formed to cover the inter-substrate conduction electrode part,
The liquid crystal device, wherein the spherical conductive particles break through the inorganic alignment film and are in contact with the metal film layer. The pair of substrates is
An element substrate on which a pixel electrode as the liquid crystal driving electrode, an element substrate side alignment film as the alignment film, and an element substrate side inter-substrate conduction electrode part as the inter-substrate conduction electrode part are formed;
The common substrate as the liquid crystal driving electrode, the counter substrate side alignment film as the alignment film, and the counter substrate on which the counter substrate side inter-substrate conduction electrode part as the inter-substrate conduction electrode part is formed,
At least in the counter substrate, the counter substrate side alignment film is an inorganic alignment film that covers the counter substrate side inter-substrate conduction electrode part, and the counter substrate side inter-substrate conduction electrode part is formed from the spherical conductive particles. 2. The liquid crystal device according to claim 1, wherein the liquid crystal device is formed of a metal film layer having a low hardness, and the spherical conductive particles penetrate through the inorganic alignment film and are electrically connected to the metal film layer.   The liquid crystal device according to claim 2, wherein the inorganic alignment film is formed on the entire surface of the counter substrate.   In the element substrate, the element substrate side alignment film is an inorganic alignment film that covers a surface of the element substrate side inter-substrate conduction electrode part, and the element substrate side inter-substrate conduction electrode part is the spherical conductive particle. 4. The liquid crystal device according to claim 2, wherein the liquid crystal device is formed of a metal film layer having a lower hardness, and the spherical conductive particles penetrate through the inorganic alignment film and are electrically connected to the metal film layer. In the counter substrate, a light shielding layer made of the metal film layer is formed on the side opposite to the side where the element substrate is located with respect to the common electrode,
5. The liquid crystal device according to claim 2, wherein the counter substrate side inter-substrate conduction electrode portion is a non-formation region of the common electrode. 6.   6. The liquid crystal device according to claim 1, wherein the metal film layer is an aluminum metal film.   The liquid crystal device according to claim 1, wherein a barrier layer is laminated on a surface of the aluminum-based metal film in the metal film layer.   The liquid crystal device according to any one of claims 1 to 7, wherein the spherical conductive particles are formed by coating a surface of a spherical glass fiber with a metal.   The liquid crystal device according to claim 1, wherein the inorganic alignment film is an oblique vapor deposition film of silicon oxide. A pair of substrates on which one surface of the liquid crystal driving electrode, an inter-substrate conduction electrode portion, and an alignment film laminated on the surface of the liquid crystal driving electrode are opposed to each other, and between the pair of substrates Between the held liquid crystal layer and the pair of substrates, the inter-substrate conduction electrode portions are electrically connected to each other, and one spherical conductive particle is provided for one portion of the inter-substrate conduction electrode portion. In a manufacturing method of a liquid crystal device having
In the substrate forming step of forming at least one of the pair of substrates, the alignment film is formed by an inorganic alignment film that covers the inter-substrate conduction electrode portion, and the sphere is formed on the inter-substrate conduction electrode portion. A metal film layer having a lower hardness than the conductive particles in the shape is provided,
In the bonding step of bonding the pair of substrates in a state where the spherical conductive particles are disposed between the pair of substrates, the spherical conductive particles break through the inorganic alignment film and are electrically connected to the metal film layer. A manufacturing method of a liquid crystal device, wherein A projection type display device comprising the liquid crystal device according to any one of claims 1 to 9,
A light source unit for emitting light supplied to the liquid crystal device;
A projection optical system for projecting light modulated by the liquid crystal device;
A projection display device characterized by comprising:

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