JP5691678B2 - Electro-optic device, projection display device - Google Patents

Description

  The present invention relates to an electro-optical device such as a liquid crystal device and a projection display device.

  An electro-optical device such as a liquid crystal device or an organic electroluminescence device has a structure in which a plurality of conductive layers are stacked in layers with an insulating film interposed therebetween. In such an electro-optical device, a structure in which a contact hole is formed in the insulating film and the conductive films are connected to each other through the contact hole is employed in order to make the two conductive layers sandwiching the insulating film conductive. For example, in the liquid crystal device, when the pixel electrode and the relay electrode are electrically connected, as shown in FIG. 12, a predetermined position from the outer peripheral end 9av of the pixel electrode 9a in a region overlapping the pixel electrode 9a in the insulating film. A contact hole 7b is formed in the inner region separated from each other (see, for example, Patent Document 1).

JP 2010-191408 A

  However, as shown in FIG. 12, when the contact hole 7d is formed in the inner region separated from the outer peripheral end 9av of the pixel electrode 9a by a predetermined position, the inter-pixel region 10f positioned between the adjacent pixel electrodes 9a is widened. Must. That is, in the case of the structure shown in FIG. 12, a portion 9aw located outside the contact hole 7d is generated in the pixel electrode 9a, and when such a portion 9aw exists, the interval between the pixel electrodes 9a is widened and adjacent pixels are formed. A short circuit between the electrodes 9a must be prevented. As a result, a region that does not directly contribute to display becomes wide, and a high-quality image cannot be displayed.

  The problem that the layout of the conductive layer is restricted is a problem that occurs not only when the pixel electrode 9a and the relay electrode are electrically connected but also when the conductive layers sandwiching the insulating film are electrically connected. .

  In view of the above problems, an object of the present invention is to improve the structure of a conductive portion between conductive layers sandwiching an insulating film therebetween, thereby increasing the degree of freedom in layout of the conductive layers. An object of the present invention is to provide a device, a projection display device, and an electro-optical device manufacturing method.

  In order to solve the above problems, the present invention provides a substrate body for an element substrate, a first conductive layer formed on one substrate surface side of the substrate body, and the substrate body with respect to the first conductive layer. An insulating film provided on a side opposite to the side where the first conductive layer is located, and a bottom portion of a contact hole formed in the insulating film on a side opposite to the side where the first conductive layer is located And a second conductive layer having one end connected to the first conductive layer, and a tip edge located on the one side at the end of the second conductive layer Is located on the other side opposite to the one side of the opening edge portion of the contact hole from the opening edge portion located on the one side.

  In the present invention, the first conductive layer and the second conductive layer sandwiching the insulating film are electrically connected at the bottom of the contact hole formed in the insulating film. Here, one end of the second conductive layer is electrically connected to the second conductive layer, and a tip edge located on one side of the second conductive layer is located on one side of the opening edge of the contact hole. It is located on the other side opposite to the opening edge portion. That is, the leading edge of the end portion of the second conductive layer does not protrude from the contact hole to one side. For this reason, when another conductive layer is located on one side with respect to the second conductive layer, there is no possibility of short circuit without securing a wide gap between the second conductive layer and the other conductive layer. The degree of freedom in layout can be increased.

  In this invention, the said edge part is the length of the edge part extended in the 2nd direction which cross | intersects the 1st direction prescribed | regulated by the said 1 side and the said other side among the outer periphery ends of the said 2nd conductive layer. It is possible to adopt a configuration in which the side portion protrudes to the one side from a portion adjacent in the second direction at the middle position in the direction. In the present invention, since the leading edge of the end portion of the second conductive layer does not protrude from the contact hole to one side, even when the end portion protrudes from the second conductive layer, the second conductive layer and the second conductive layer The degree of freedom in terms of layout and shape of the conductive layer can be increased, for example, it is not necessary to ensure a wide gap with another conductive layer located on one side of the layer.

  In this case, it is preferable that the side edge on both sides located in the second direction at the end is located outside the opening edge of the contact hole in the second direction. If the side edges on both sides located in the second direction at the end of the second conductive layer are located outside the opening edge of the contact hole in the second direction, the end of the second conductive layer is contacted in the second direction. Since the entire bottom portion of the hole is electrically connected to the first conductive layer, the connection resistance can be reduced.

  In the present invention, a configuration may be adopted in which the side edge on both sides positioned in the second direction at the end is positioned inside the second direction from the opening edge of the contact hole.

  In the present invention, the first conductive layer may be a relay electrode that is electrically connected to a pixel transistor formed on one substrate surface side of the substrate body, and the second conductive layer may be a pixel electrode. preferable.

  In the present invention, the element substrate is, for example, an element substrate for a liquid crystal device that holds a liquid crystal layer between the element substrate and a counter substrate disposed to face one surface of the substrate body. That is, the present invention can be applied to a liquid crystal device among various electro-optical devices.

  The electro-optical device to which the present invention is applied can be used for various display devices such as a direct-view display device. For example, when the electro-optical device to which the present invention is applied is a liquid crystal device, it can be used as a light valve of a projection display device. Such a projection display device includes a light source unit that emits illumination light applied to the electro-optical device (liquid crystal device) to which the present invention is applied, a projection optical system that projects light modulated by the electro-optical device, have.

  The present invention also provides a first conductive layer forming step of forming a first conductive layer on one substrate surface side of a substrate body for an element substrate, and an insulating film provided with a contact hole on the surface side of the first conductive layer Forming a conductive film on the surface side of the insulating film, patterning the conductive film, and patterning the conductive film on one side at the bottom of the contact hole with respect to the first conductive layer A patterning step of forming a second conductive layer in which the end of the second conductive layer is conductive, wherein the patterning step is located on the one side at the end of the second conductive layer. The position of the front end edge is a position on the other side opposite to the one side of the opening edge of the contact hole from the opening edge located on the one side.

  In the present invention, the first conductive layer and the second conductive layer sandwiching the insulating film are electrically connected at the bottom of the contact hole formed in the insulating film. Here, one end of the second conductive layer is electrically connected to the second conductive layer, and a tip edge located on one side of the second conductive layer is located on one side of the opening edge of the contact hole. Located on the other side opposite the opening edge. That is, the leading edge of the end portion of the second conductive layer does not protrude from the contact hole to one side. For this reason, even when another conductive layer is located on one side with respect to the second conductive layer, there is no need to ensure a wide gap between the second conductive layer and the other conductive layer. Can increase the degree of freedom.

  In the present invention, the patterning step includes a photosensitive resist coating step of coating a positive type photosensitive resist on the surface side of the conductive film, and the exposure light emitted from the exposure light source is reduced through an exposure mask and an optical system. An exposure step of performing projection exposure; a development step of developing the photosensitive resist to form a resist mask; and an etching step of etching away the conductive film other than the region overlapping with the resist mask. preferable. According to such a configuration, even when the exposure position of the photosensitive resist is shifted to the other side in the exposure process, the photosensitive resist positioned at the bottom of the contact hole is not sufficiently exposed due to the influence of the depth of focus. Accordingly, a resist mask is always formed inside the contact hole after development, so that the first conductive layer and the second conductive layer are always reliably conducted over the entire bottom of the contact hole.

1 is a block diagram showing an electrical configuration of a liquid crystal device (electro-optical device) according to Embodiment 1 of the present invention. It is explanatory drawing of the liquid crystal panel of the liquid crystal device which concerns on Embodiment 1 of this invention. It is explanatory drawing which shows the structure of the electrode etc. of the liquid crystal panel used for the liquid crystal device which concerns on Embodiment 1 of this invention. It is explanatory drawing of the pixel of the liquid crystal device which concerns on Embodiment 1 of this invention. It is explanatory drawing which shows the conduction structure of the pixel electrode and drain electrode in the liquid crystal device which concerns on Embodiment 1 of this invention. It is explanatory drawing which shows the process of forming the conduction | electrical_connection part of a drain electrode and a pixel electrode among the manufacturing processes of the liquid crystal device which concerns on Embodiment 1 of this invention. It is explanatory drawing of the exposure process shown in FIG. It is explanatory drawing which shows the conduction structure of the pixel electrode and drain electrode in the liquid crystal device which concerns on Embodiment 2 of this invention. It is explanatory drawing which shows the conduction structure of the pixel electrode and drain electrode in the liquid crystal device which concerns on Embodiment 3 of this invention. It is explanatory drawing which shows the planar structure of the other conduction | electrical_connection part in the liquid crystal device to which this invention is applied. It is explanatory drawing of the projection type display apparatus using the liquid crystal device to which this invention is applied. It is explanatory drawing which shows the conduction structure of the pixel electrode and relay electrode in the conventional liquid crystal device.

  Embodiments of the present invention will be described with reference to the drawings. In the drawings to be referred to in the following description, the scales are different for each layer and each member so that each layer and each member have a size that can be recognized on the drawing. In the embodiment described below, a case where the present invention is applied to a liquid crystal device among various electro-optical devices will be described. In the present invention, the “first direction” is the Y direction in which the data line 6a extends, and the “second direction” in the present invention is the X direction in which the scanning line 3a extends. To do. Accordingly, in the drawings referred to in the following description, Y1 is attached to one side in the first direction Y, and Y2 is attached to the other side in the first direction Y. However, the “first direction” in the present invention is the X direction in which the scanning line 3a extends, and the “second direction” in the present invention is the Y direction in which the data line 6a extends. Also good.

  In addition, when the direction of the current flowing through the field effect transistor is reversed, the source and the drain are switched. In this description, the side to which the pixel electrode is connected is the drain, and the side to which the data line is connected is the source. And Further, when describing the layers formed on the element substrate, the upper layer side or the surface side means the side opposite to the side where the substrate body of the element substrate is located (the side on which the counter substrate is located), and the lower layer side means It means the side where the substrate body of the element substrate is located. In describing the layers formed on the counter substrate, the upper layer side or the surface side means the side opposite to the side where the substrate body of the counter substrate is located (the side where the element substrate is located), and the lower layer side is It means the side where the substrate body of the counter substrate is located.

[Embodiment 1]
(overall structure)
FIG. 1 is a block diagram showing an electrical configuration of a liquid crystal device (electro-optical device) according to Embodiment 1 of the present invention. In FIG. 1, a liquid crystal device 100 has a liquid crystal panel 100p in a TN (Twisted Nematic) mode or a VA (Vertical Alignment) mode, and the liquid crystal panel 100p has a plurality of pixels 100a arranged in a matrix in the central region. The image display area 10a (pixel area) is provided. In the liquid crystal panel 100p, in an element substrate 10 (see FIG. 2 and the like) described later, a plurality of data lines 6a (image signal lines) and a plurality of scanning lines 3a extend vertically and horizontally inside the image display region 10a. A pixel 100a is formed at a position corresponding to the intersection. In each of the plurality of pixels 100a, a pixel transistor 30 made of a field effect transistor and a pixel electrode 9a described later are formed. The data line 6 a is electrically connected to the source of the pixel transistor 30, the scanning line 3 a is electrically connected to the gate of the pixel transistor 30, and the pixel electrode 9 a is electrically connected to the drain of the pixel transistor 30. Has been.

  In the element substrate 10, a scanning line driving circuit 104 and a data line driving circuit 101 are provided on the outer peripheral side of the image display region 10 a. The data line driving circuit 101 is electrically connected to each data line 6a, and sequentially supplies the image signal supplied from the image processing circuit to each data line 6a. The scanning line driving circuit 104 is electrically connected to each scanning line 3a, and sequentially supplies a scanning signal to each scanning line 3a.

  In each pixel 100a, the pixel electrode 9a is opposed to a common electrode formed on a counter substrate 20 (see FIG. 2 and the like), which will be described later, via a liquid crystal layer, and constitutes a liquid crystal capacitor 50a. Each pixel 100a is provided with a holding capacitor 55 in parallel with the liquid crystal capacitor 50a in order to prevent fluctuations in the image signal held in the liquid crystal capacitor 50a. In this embodiment, in order to form the storage capacitor 55, the capacitor line 5b extending in parallel with the scanning line 3a is formed across the plurality of pixels 100a. In this embodiment, the capacitor line 5b is electrically connected to the constant potential wiring 6t to which the common potential Vcom is applied.

(Configuration of liquid crystal panel 100p and element substrate 10)
FIG. 2 is an explanatory diagram of the liquid crystal panel 100p of the liquid crystal device 100 according to the first embodiment of the present invention. FIGS. It is the top view seen from and HH 'sectional drawing. FIG. 3 is an explanatory diagram showing the configuration of the electrodes and the like of the liquid crystal panel 100p used in the liquid crystal device 100 according to Embodiment 1 of the present invention. FIGS. It is explanatory drawing which shows a simple layout, and explanatory drawing which expands and shows one of the corner | angular parts of the liquid crystal panel 100p. In FIG. 3, the number of pixel electrodes 9a, dummy pixel electrodes 9b, and the like are small.

  As shown in FIGS. 2 and 3, in the liquid crystal panel 100p, the element substrate 10 (electro-optical device substrate) and the counter substrate 20 (electro-optical device substrate) are bonded to each other with a sealant 107 through a predetermined gap. The sealing material 107 is provided in a frame shape along the outer edge of the counter substrate 20. The sealing material 107 is an adhesive made of a photo-curing resin, a thermosetting resin, or the like, and is mixed with a gap material 107a such as glass fiber or glass beads for setting the distance between both substrates to a predetermined value.

  In the liquid crystal panel 100p having such a configuration, the element substrate 10 and the counter substrate 20 are both square, and the image display area 10a described with reference to FIG. 1 is provided as a square area in the approximate center of the liquid crystal panel 100p. ing. Corresponding to this shape, the sealing material 107 is also provided in a substantially square shape, and the outer side of the image display area 10a is a rectangular frame-shaped outer peripheral area 10c.

  In the element substrate 10, the data line driving circuit 101 and a plurality of terminals 102 are formed along one side of the element substrate 10 in the outer peripheral region 10 c, and the scanning line driving circuit 104 is formed along another side adjacent to the one side. Is formed. Note that a flexible wiring board (not shown) is connected to the terminal 102, and various potentials and various signals are input to the element substrate 10 through the flexible wiring board.

  As will be described in detail later, the pixel transistor 30 described with reference to FIG. 1 and the pixel transistor 30 are electrically connected to the image display region 10a on the one substrate surface facing the counter substrate 20 in the element substrate 10. Connected pixel electrodes 9a (liquid crystal driving electrodes) are formed in a matrix, and an alignment film 16 as an element substrate-side alignment film is formed on the upper side of the pixel electrodes 9a.

  A dummy pixel formed simultaneously with the pixel electrode 9a in the peripheral area 10b of the square frame shape sandwiched between the image display area 10a and the sealing material 107 in the outer peripheral area 10c on the substrate surface on one side of the element substrate 10. Electrode 9b is formed. In the dummy pixel electrode 9b, adjacent dummy pixel electrodes 9b are connected to each other by a narrow connecting portion 9f (see FIG. 3B). The dummy pixel electrode 9b is applied with the common potential Vcom, and prevents the disorder of the alignment of liquid crystal molecules at the outer peripheral side end of the image display region 10a. Further, the dummy pixel electrode 9b compresses the difference in height between the image display region 10a and the peripheral region 10b when the surface on which the alignment film 16 is formed in the element substrate 10 is flattened by polishing. This contributes to making the surface on which the film is formed flat. In some cases, no potential is applied to the dummy pixel electrode 9b, and the dummy pixel electrode 9b is potentialally floated. Even in this case, the dummy pixel electrode 9b has a height difference between the image display region 10a and the peripheral region 10b. This contributes to compressing the difference in position and making the surface on which the alignment film 16 is formed flat.

  As shown in FIG. 2B, a common electrode 21 (liquid crystal driving electrode) is formed on one side of the counter substrate 20 facing the element substrate 10. The common electrode 21 is formed across the plurality of pixels 100a as substantially the entire surface of the counter substrate 20 or a plurality of strip electrodes.

  Further, a light shielding layer 29 is formed on the lower layer side of the common electrode 21 on one side of the counter substrate 20 facing the element substrate 10, and an alignment film 26 as a counter substrate side alignment film is formed on the surface of the common electrode 21. Are stacked. In this embodiment, the light shielding layer 29 includes a frame portion 29a extending along the outer peripheral edge of the image display region 10a, and a black matrix portion 29b overlapping the inter-pixel region 10f sandwiched between adjacent pixel electrodes 9a. Here, the frame portion 29 a is formed at a position overlapping the dummy pixel electrode 9 b, and the outer peripheral edge of the frame portion 29 a is at a position with a gap between it and the inner peripheral edge of the sealing material 107. Therefore, the frame portion 29a and the sealing material 107 do not overlap.

  As shown in FIGS. 2A, 3A, and 3B, in the liquid crystal panel 100p, on the outer side of the sealing material 107, one surface side of the counter substrate 20 (the surface side facing the element substrate 10). ) Is formed in the corner portion of the substrate substrate between the opposing substrates, and on one side of the element substrate 10 (the surface facing the counter substrate 20), An inter-substrate conducting electrode portion 8t is formed as an element substrate-side inter-substrate conducting electrode portion at a position facing a corner portion of the counter substrate 20 (inter-substrate conducting electrode portion 25t). The inter-substrate conducting electrode portion 8t is conducted to the constant potential wiring 6t to which the common potential Vcom is applied, and the constant potential wiring 6t is conducted to the common potential applying terminal 102a among the terminals 102. An inter-substrate conducting material 109 containing conductive particles is disposed between the inter-substrate conducting electrode portion 8t and the inter-substrate conducting electrode portion 25t, and the common electrode 21 of the counter substrate 20 serves as an inter-substrate conducting electrode. It is electrically connected to the element substrate 10 side via the electrode portion 8t, the inter-substrate conducting material 109, and the inter-substrate conducting electrode portion 25t. Therefore, the common potential Vcom is applied to the common electrode 21 from the element substrate 10 side.

  The sealing material 107 is provided along the outer peripheral edge of the counter substrate 20 with substantially the same width dimension. For this reason, the sealing material 107 is substantially rectangular. However, the sealing material 107 is provided so as to pass through the inside avoiding the inter-substrate conduction electrode portions 8t and 25t in a region overlapping the corner portion of the counter substrate 20, and the corner portion of the sealing material 107 is substantially arc-shaped. is there.

  In the liquid crystal device 100 having such a configuration, when the pixel electrode 9a and the common electrode 21 are formed of a light-transmitting conductive film, a transmissive liquid crystal device can be configured. On the other hand, among the pixel electrode 9a and the common electrode 21, for example, when the common electrode 21 is formed of a light-transmitting conductive film and the pixel electrode 9a is formed of a reflective conductive film, a reflective liquid crystal device is formed. be able to. When the liquid crystal device 100 is of a reflective type, the light incident from the counter substrate 20 side of the element substrate 10 and the counter substrate 20 is modulated while being reflected by the element substrate 10 and emitted to display an image. In the case where the liquid crystal device 100 is a transmissive type, for example, light incident from the side of the counter substrate 20 out of the element substrate 10 and the counter substrate 20 is modulated while being transmitted through the element substrate 10 and is displayed. To do.

  The liquid crystal device 100 can be used as a color display device of an electronic device such as a mobile computer or a mobile phone. In this case, a color filter (not shown) is formed on the counter substrate 20 or the element substrate 10. Further, in the liquid crystal device 100, the polarizing film, the retardation film, the polarizing plate, etc. have a predetermined orientation with respect to the liquid crystal panel 100p according to the type of the liquid crystal layer 50 to be used and the normally white mode / normally black mode. Placed in. Furthermore, the liquid crystal device 100 can be used as a light valve for RGB in a projection display device (liquid crystal projector) described later. In this case, each color liquid crystal device 100 for RGB receives light of each color separated through RGB color separation dichroic mirrors as projection light, so that no color filter is formed.

  In this embodiment, the liquid crystal device 100 is a transmissive liquid crystal device used as a RGB light valve in a projection display device described later, and light incident from the counter substrate 20 is transmitted through the element substrate 10 and emitted. The case will be mainly described. Further, in this embodiment, the liquid crystal device 100 will be described focusing on the case where the liquid crystal layer 50 includes a VA mode liquid crystal panel 100p using a nematic liquid crystal compound having a negative dielectric anisotropy.

(Specific pixel configuration)
4 is a plan view of a plurality of adjacent pixels in the element substrate 10 used in the liquid crystal device 100 according to Embodiment 1 of the present invention, and when the liquid crystal device 100 is cut at a position corresponding to the FF ′ line. FIG. In FIG. 4A, the semiconductor layer 1a is indicated by a thin and short dotted line, the scanning line 3a is indicated by a thick solid line, the data line 6a and a thin film formed simultaneously with it are indicated by a one-dot chain line, and the capacitance line 5b is indicated by two lines. The pixel electrode 9a is indicated by a long broken line, and the lower electrode layer 4a is indicated by a thin solid line. In the element substrate 10, the dielectric layer 42 a is formed. However, since the dielectric layer 42 a is formed in a region overlapping with the capacitor line 5 b, the illustration is omitted in FIG. Further, although there is an opening edge of the etching stopper layer 40a along the outer peripheral edge of the lower electrode layer 4a, the opening edge is not shown in FIG.

  As shown in FIG. 4A, a rectangular pixel electrode 9a is formed on each of the plurality of pixels 100a on one side of the element substrate 10 facing the counter substrate 20, and adjacent pixels are arranged. A data line 6a and a scanning line 3a are formed along a region overlapping the inter-pixel region 10f sandwiched between the electrodes 9a. In this embodiment, the inter-pixel region 10f extends vertically and horizontally, and the scanning line 3a and the data line 6a are linearly formed so as to overlap the inter-pixel region 10f. More specifically, the data line 6a extends linearly along the region overlapping the first inter-pixel region 10g extending in the first direction Y in the inter-pixel region 10f, and extends in the second direction X. The scanning line 3a extends linearly along a region overlapping the existing second inter-pixel region 10h.

  A pixel transistor 30 is formed corresponding to the intersection of the data line 6a and the scanning line 3a. In this embodiment, the pixel transistor 30 is formed in a region where the data line 6a and the scanning line 3a intersect. Yes. A capacitance line 5b is formed on the element substrate 10 so as to overlap the scanning line 3a, and a common potential Vcom is applied to the capacitance line 5b. In this embodiment, the capacitor line 5b includes a main line portion extending linearly so as to overlap the scanning line 3a, and a sub-line portion extending so as to overlap the data line 6a at the intersection of the data line 6a and the scanning line 3a. It has.

  As shown in FIG. 4B, the element substrate 10 is formed on a liquid crystal layer 50 side substrate surface (one surface side facing the counter substrate 20) of a translucent substrate body 10w such as a quartz substrate or a glass substrate. The pixel electrode 9a, the pixel transistor 30 for pixel switching, and the alignment film 16 are mainly configured. The counter substrate 20 includes a translucent substrate body 20w such as a quartz substrate or a glass substrate, a light shielding layer 29 formed on the surface of the liquid crystal layer 50 side (one side facing the element substrate 10), the common electrode 21, And the alignment film 26 as a main component.

  In the element substrate 10, a pixel transistor 30 including the semiconductor layer 1a is formed in each of the plurality of pixels 100a. The semiconductor layer 1a includes a channel region 1g, a source region 1b, and a drain region 1c that are opposed to the gate electrode 3c, which is a part of the scanning line 3a, via the translucent gate insulating layer 2. The source region 1b and the drain region 1c each have a low concentration region and a high concentration region. The semiconductor layer 1a is composed of, for example, a polycrystalline silicon film or the like formed on a transparent base insulating film 12 made of a silicon oxide film or the like on the substrate body 10w, and the gate insulating layer 2 is formed by a CVD method or the like. The silicon oxide film and the silicon nitride film formed by the above. The gate insulating layer 2 may have a two-layer structure of a silicon oxide film obtained by thermally oxidizing the semiconductor layer 1a and a silicon oxide film or silicon nitride film formed by a CVD method or the like. For the scanning line 3a, a conductive polysilicon film, a metal silicide film, or a metal film is used. In the case where a light shielding layer overlapping the scanning line 3a is formed between the substrate body 10w and the base insulating film 12 or between the two layers of the base insulating film 12, the light shielding layer is referred to as the scanning line 3a. A structure in which the gate electrode 3c is electrically connected may be employed.

  A translucent first interlayer insulating film 41 made of a silicon oxide film or the like is formed on the upper layer side of the scanning line 3a, and a lower electrode layer 4a is formed on the upper layer of the first interlayer insulating film 41. The lower electrode layer 4a is formed in a substantially L-shape extending along the scanning line 3a and the data line 6a with a position where the scanning line 3a and the data line 6a intersect as a base point. The lower electrode layer 4a is made of a conductive polysilicon film, a metal silicide film, a metal film, or the like, and is electrically connected to the drain region 1c through the contact hole 7c.

  On the upper layer side of the lower electrode layer 4a, a dielectric layer 42a made of an insulating film having a high dielectric constant such as an aluminum oxide film, a titanium oxide film, a tantalum oxide film, a niobium oxide film, a hafnium oxide film, a lanthanum oxide film, or a zirconium oxide film. Is formed. On the upper layer side of the dielectric layer 42a, a capacitor line 5b is formed so as to face the lower electrode layer 4a through the dielectric layer 42a. The capacitor line 5b, the dielectric layer 42a and the lower electrode layer 4a hold the capacitor line 5b. A capacitor 55 is formed. The capacitor line 5b is made of a conductive polysilicon film, a metal silicide film, a metal film, or the like. Here, the lower electrode layer 4 a, the dielectric layer 42 a, and the capacitor line 5 b are formed on the upper layer side of the pixel transistor 30, and the storage capacitor 55 is planar with respect to at least the pixel transistor 30 on the upper layer side of the pixel transistor 30. It is formed in a region that overlaps visually.

  In this embodiment, the dielectric layer 42a has substantially the same shape as the capacitor line 5b and is formed in the same region. Further, the end edge 42e of the dielectric layer 42a and the end edge 5e of the capacitance line 5b are at positions overlapping the lower electrode layer 4a. An etching stopper layer 40a made of a silicon oxide film or the like is formed between the lower electrode layer 4a and the dielectric layer 42a, and the etching stopper layer 40a is a region partially overlapping the lower electrode layer 4a. An opening 40b is formed in the opening. For this reason, the lower electrode layer 4a and the capacitor line 5b are opposed to each other through the dielectric layer 42a in the opening 40b to form a storage capacitor 55. The etching stopper layer 40a is formed in a region that overlaps at least the edge 42e of the dielectric layer 42a and the edge 5e of the capacitance line 5b. Note that the etching stopper layer 40a may be formed only in a region that overlaps the end edge 42e of the dielectric layer 42a and the end edge 5e of the capacitor line 5b.

  A translucent second interlayer insulating film 43 made of a silicon oxide film or the like is formed on the upper side of the capacitor line 5b, and a data line 6a and a drain electrode 6b are formed on the upper layer of the second interlayer insulating film 43. Yes. Data line 6a is electrically connected to source region 1b through contact hole 7a. The drain electrode 6b is electrically connected to the lower electrode layer 4a through the contact hole 7b, and is electrically connected to the drain region 1c through the lower electrode layer 4a. The data line 6a and the drain electrode 6b are made of a conductive polysilicon film, a metal silicide film, a metal film, or the like.

  A light-transmitting third interlayer insulating film 44 made of a silicon oxide film or the like is formed on the upper side of the data line 6a and the drain electrode 6b. In the third interlayer insulating film 44, a contact hole 7d leading to the drain electrode 6b is formed. A rectangular pixel electrode 9a made of a light-transmitting conductive film such as an ITO (Indium Tin Oxide) film is formed on the third interlayer insulating film 44. The pixel electrode 9a is drained through a contact hole 7d. It is electrically connected to the electrode 6b (relay electrode). In this embodiment, the surface of the third interlayer insulating film 44 is a flat surface. A dummy pixel electrode 9b (not shown in FIG. 4A) described with reference to FIG. 2B or the like is formed on the surface of the third interlayer insulating film 44, and the dummy pixel electrode 9b Consists of a translucent conductive film formed simultaneously with the pixel electrode 9a.

An alignment film 16 is formed on the surface of the pixel electrode 9a. In this embodiment, the alignment film 16 is an obliquely deposited film of SiO _x (x <2), SiO ₂ , TiO ₂ , MgO, Al ₂ O ₃ , In ₂ O ₃ , Sb ₂ O ₃ , Ta ₂ O ₅ or the like. A transparent protective film 17 such as a silicon oxide film or a silicon nitride film is formed between the alignment film 16 and the pixel electrode 9a. In this embodiment, the alignment film 16 is composed of an oblique vapor deposition film of a silicon oxide film. The protective film 17 has a flat surface, and fills a recess formed between adjacent pixel electrodes 9a. Therefore, the alignment film 16 is formed on the flat surface of the protective film 17.

  In the counter substrate 20, aluminum, titanium, molybdenum, tungsten, chrome, and the like are formed on the surface of the translucent substrate body 20 w such as a quartz substrate or a glass substrate on the liquid crystal layer 50 side (surface facing the element substrate 10). A conductive light shielding layer 29 made of a compound, an alloy, or the like is formed, and the black matrix portion 29b formed in the image display area 10a of the light shielding layer 29 includes an inter-pixel area 10f (see FIG. 3 and the like). It extends vertically and horizontally at a position that overlaps with (see).

In this embodiment, an aluminum alloy layer (aluminum metal layer) is used for the light shielding layer 29. A common electrode 21 is formed on the upper layer of the light shielding layer 29 (the surface facing the element substrate 10), and the common electrode 21 is made of an ITO film. An alignment film 26 is formed on the upper layer of the light shielding layer 29 (the surface facing the element substrate 10). The alignment film 26 is similar to the alignment film 16, and is composed of SiO _x (x <2), SiO ₂ , TiO ₂ . ₂ , an inorganic alignment film (vertical alignment film) made of an obliquely deposited film of MgO, Al ₂ O ₃ , In ₂ O ₃ , Sb ₂ O ₃ , Ta ₂ O ₅ or the like. In this embodiment, the alignment film 26 is composed of an oblique vapor deposition film of a silicon oxide film.

  In the liquid crystal device 100 configured as described above, a nematic liquid crystal compound having a negative dielectric anisotropy is used as a liquid crystal material. The alignment films 16 and 26 vertically align the liquid crystal material, and the liquid crystal panel 100p is normally aligned. Operate as a black VA mode. Note that the data line driving circuit 101 and the scanning line driving circuit 104 described with reference to FIG. 1 and the like include a complementary transistor circuit including an n-channel driving transistor and a p-channel driving transistor. It is configured. Here, the driving transistor is formed by utilizing a part of the manufacturing process of the pixel transistor 30. Therefore, the region where the data line driving circuit 101 and the scanning line driving circuit 104 are formed on the element substrate 10 also has a cross-sectional configuration substantially similar to the cross-sectional configuration shown in FIG.

(Conduction structure between drain electrode 6b and pixel electrode 9a)
Referring to FIG. 5, a drain electrode 6b (first conductive layer) and a pixel electrode 9a (second conductive layer) are used as a conductive structure of conductive layers (first conductive layer and second conductive layer) sandwiching an insulating film therebetween. ) Will be described. FIG. 5 is an explanatory diagram showing a conduction structure between the pixel electrode 9a and the drain electrode 6b in the liquid crystal device 100 according to the first embodiment of the present invention. FIGS. 5 (a), 5 (b), and 5 (c) 4A is an explanatory view showing the drain electrode 6b (first conductive layer), the contact hole 7d, and the pixel electrode 9a (second conductive layer), and enlarges the vicinity of the contact hole 7d. It is explanatory drawing shown, and GG 'sectional drawing. In FIG. 5, the drain electrode 6b is indicated by a one-dot chain line, the contact hole 7d is indicated by a thin solid line, and the pixel electrode 9a is indicated by a long broken line.

  As shown in FIG. 5, in the liquid crystal device 100 of the present embodiment, a third interlayer insulating film 44 is formed between the drain electrode 6b and the pixel electrode 9a, and the contact formed on the third interlayer insulating film 44 is formed. At the bottom 7d0 of the hole 7d, the drain electrode 6b and the end 9a0 on one side Y1 in the first direction Y of the pixel electrode 9a are electrically connected. The contact hole 7d has a rectangular shape of approximately 0.5 μm in plan and has a depth of about 200 to 400 nm. In the present embodiment, the end portion 9a0 is provided at an intermediate position in the length direction of the side portion 9ax extending in the second direction X in the outer peripheral end 9av of the pixel electrode 9a, and the end portion 9a0 is the side portion. It consists of a rectangular portion 9at that protrudes to one side Y1 from a portion adjacent in the second direction X at 9ax.

  At the end 9a0 of the pixel electrode 9a, the leading edge 9a1 located on the one side Y1 in the first direction Y is an opening edge portion 7dy located on the one side Y1 in the first direction Y of the opening edge of the contact hole 7d. Therefore, it is located on the other side Y2 opposite to the one side Y1 in the first direction Y. That is, the leading edge of the end 9a0 of the pixel electrode 9a does not protrude from the contact hole 7d to the one side Y1. However, the end 9a0 of the pixel electrode 9a is electrically connected to the drain electrode 6b in the entire bottom portion 7d0 of the contact hole 7d in the first direction Y.

  Further, at the end portion 9a0 of the pixel electrode 9a, the side edge 9a2 on both sides located in the second direction X is located outside the second direction X by the dimension d1 from the opening edge of the contact hole 7d. The end portion 9a0 of the electrode 9a is electrically connected to the drain electrode 6b in the entire bottom portion 7d0 of the contact hole 7d in the second direction X. Accordingly, the end 9a0 of the pixel electrode 9a is electrically connected to the drain electrode 6b in the entire bottom portion 7d0 of the contact hole 7d in both the first direction Y and the second direction X.

(Manufacturing method of the liquid crystal device 100)
FIG. 6 is an explanatory diagram illustrating a process of forming a conductive portion between the drain electrode 6b and the pixel electrode 9a in the manufacturing process of the liquid crystal device 100 according to the first embodiment of the present invention. (A4) is sectional drawing corresponding to FIG.5 (c), FIG.6 (b1)-(b4) is a top view corresponding to FIG.5 (b). FIG. 7 is an explanatory diagram of the exposure process shown in FIG. 6, and FIGS. 7A and 7B are explanatory diagrams of the exposure apparatus and explanatory diagrams showing the state of exposure.

  In realizing the conduction structure described with reference to FIG. 5, in this embodiment, as shown in FIGS. 6A1 and 6B1, the drain electrode 6b is formed on one substrate surface side of the substrate body (not shown). (First conductive layer forming step / drain electrode forming step). Next, a third interlayer insulating film 44 having a contact hole 7b is formed on the surface side of the drain electrode 6b (insulating film forming step). The contact hole 7b can be formed by forming the third interlayer insulating film 44, forming an etching mask using a photolithography technique, and then etching the third interlayer insulating film 44.

  Next, in the conductive film forming step shown in FIGS. 6A2 and 6B2, a translucent conductive film 9 such as an ITO film is formed on the surface side of the third interlayer insulating film 44.

  Next, the conductive film 9 is patterned in the patterning step shown in FIGS. 6A3 and 6B3 and FIGS. 6A4 and 6B4, and the drain electrode 6b is formed as described with reference to FIG. On the other hand, a pixel electrode 9a is formed in which the end 9a0 on one side Y1 in the first direction Y is conductive at the bottom 7d0 of the contact hole 7d. At this time, the position of the tip edge 9a1 located on the one side Y1 at the end 9a0 of the pixel electrode 9a is set to the other side in the first direction Y from the opening edge portion 7dy located on the one side Y1 among the opening edges of the contact hole 7d. The position is Y2.

  In performing this patterning step, in this embodiment, as shown in FIGS. 6A3 and 6B3, after applying a positive type photosensitive resist 90 on the surface side of the conductive film 9 in the photosensitive resist coating step, In the exposure step, the photosensitive resist 90 is partially exposed. In this exposure process, in this embodiment, a reduced projection exposure apparatus 900 is used as shown in FIG. In the reduced projection exposure apparatus 900, the first optical system 920 that collimates the exposure light from the exposure light source 910 that emits the exposure light to the photosensitive resist 90 on the substrate body 10w, and the exposure mask 930 (Rectil). ), And a second optical system 940 for reducing and projecting the exposure light that has passed through the exposure mask 930 onto the photosensitive resist 90. Therefore, the exposure light emitted from the exposure light source 910 selectively exposes the photosensitive resist 90 in a pattern corresponding to the pattern of the exposure mask 930 as shown in FIG. 7B. Next, in the development step shown in FIGS. 6A4 and 6B4, the photosensitive resist 90 is developed to form a resist mask 90a.

  Thereafter, if an etching process is performed to remove the conductive film 9 other than the region overlapping with the resist mask 90a, the pixel electrode 9a can be formed by patterning, and the conductive structure described with reference to FIG. 5 can be formed. it can. In addition, since the well-known method can be utilized about the other process for manufacturing the liquid crystal device 100, those description is abbreviate | omitted.

(Main effects of this form)
As described above, in the liquid crystal device 100 of the present embodiment, the drain electrode 6b (first conductive layer) and the pixel electrode 9a (second conductive layer) sandwiching the third interlayer insulating film 44 between the third interlayer insulating film Conduction is made at the bottom 7d0 of the contact hole 7d formed in the film 44. Here, in the pixel electrode 9a, the end 9a0 on one side Y1 is electrically connected to the drain electrode 6b, and the end edge 9a1 located on the one side Y1 in the end 9a0 is the opening edge of the contact hole 7d. From the opening edge portion 7dy located on one side Y1 in the first direction Y, it is located on the other side Y2 opposite to the one side Y1 in the first direction Y. That is, the leading edge of the end 9a0 of the pixel electrode 9a does not protrude from the contact hole 7d to the one side Y1. For this reason, there is no possibility of short circuit even if the gap between the pixel electrode 9a and the pixel electrode 9a located on the one side Y1 side with respect to the pixel electrode 9a (second inter-pixel region 10h) is not wide. Accordingly, since the degree of freedom in the layout surface of the pixel electrode 9a can be increased, the pixel electrode 9a can be formed as wide as possible. Therefore, the amount of display light can be improved, and an image with high quality can be displayed.

  In this case, there is a concern that in the exposure process, if the exposure position with respect to the photosensitive resist 90 is shifted to the other side Y2 in the first direction Y, a conduction failure may occur between the pixel electrode 9a and the drain electrode 6b. In this embodiment, a positive type photosensitive resist is used as the photosensitive resist 90, and reduction projection exposure is performed on the photosensitive resist 90. According to this method, as shown in FIG. 7B, the photosensitive resist 90 located at the bottom 7d0 of the contact hole 7d is not sufficiently exposed due to the influence of the depth of focus of the exposure light. Accordingly, after development, the resist mask 90a is necessarily formed at a position overlapping the bottom 7d0 of the contact hole 7d, so that the end 9a0 of the pixel electrode 9a is always formed inside the contact hole 7d. Therefore, the pixel electrode 9a and the drain electrode 6b are always conducted in the entire bottom of the contact hole 7d.

  Further, at the end portion 9a0 of the pixel electrode 9a, the side edge 9a2 on both sides located in the second direction X is located outside the opening edge of the contact hole 7d in the second direction X. Since the end portion 9a0 is necessarily connected to the drain electrode 6b in the entire second portion of the contact hole 7d in the second direction X, the connection resistance can be reduced.

  Further, in this embodiment, the end portion 9a0 of the pixel electrode 9a is composed of a rectangular portion 9at protruding to the one side Y1 in the first direction Y. According to this embodiment, the tip edge of the end portion 9a0 of the pixel electrode 9a is Since it does not protrude from the contact hole 7d to the one side Y1, a wide gap is formed between the pixel electrode 9a and the pixel electrode 9a located on the one side Y1 side with respect to the pixel electrode 9a (second inter-pixel region 10h). It does not have to be. Therefore, even when the end portion 9a0 of the pixel electrode 9a is a protruding portion as in this embodiment, the pixel electrode 9a and the pixel electrode 9a located on the one side Y1 side with respect to the pixel electrode 9a (the first electrode) The area between two pixels 10h) may not be a wide gap.

[Embodiment 2]
FIG. 8 is an explanatory diagram showing a conduction structure between the pixel electrode 9a and the drain electrode 6b in the liquid crystal device 100 according to the second embodiment of the present invention. FIG. 8 (a), FIG. 8 (b), and FIG. 4A is an explanatory view showing the drain electrode 6b (first conductive layer), the contact hole 7d, and the pixel electrode 9a (second conductive layer), and enlarges the vicinity of the contact hole 7d. It is explanatory drawing shown, and GG 'sectional drawing. Since the basic configuration of this embodiment is the same as that of Embodiment 1, common portions are denoted by the same reference numerals and description thereof is omitted.

  In the first embodiment, in the end portion 9a0 (rectangular portion 9at) of the pixel electrode 9a, the side edge 9a2 on both sides located in the second direction X is located outside the opening edge of the contact hole 7d in the second direction X. However, in this embodiment, as shown in FIG. 8, at the end 9a0 of the pixel electrode 9a, the side edges 9a2 on both sides located in the second direction X are in the second direction from the opening edge of the contact hole 7d. Located inside X. Accordingly, the end portion 9a0 (rectangular portion 9at) of the pixel electrode 9a has the same planar size as the contact hole 7d, and the three side portions of the end portion 9a0 (rectangular portion 9at) of the pixel electrode 9a are in contact with each other. It overlaps with the edge of the bottom 7d0 of the hole 7d. Even when such a configuration is adopted, the tip edge 9a1 located on the one side Y1 in the first direction Y at the end 9a0 of the pixel electrode 9a is the first of the opening edges of the contact hole 7d, as in the first embodiment. From the opening edge portion 7dy located on one side Y1 in the direction Y, it is located on the other side Y2 opposite to the one side Y1 in the first direction Y. That is, the leading edge of the end 9a0 of the pixel electrode 9a does not protrude from the contact hole 7d to the one side Y1. Other configurations are the same as those of the first embodiment.

  Even in such a configuration, as in the first embodiment, there is no need to provide a wide gap between the pixel electrode 9a and the pixel electrode 9a located on the one side Y1 side with respect to the pixel electrode 9a (second inter-pixel region 10h). There is no risk of a short circuit. Therefore, since the degree of freedom in the layout surface of the pixel electrode 9a can be increased, the same effects as in the first embodiment can be obtained, such as the pixel electrode 9a can be formed as wide as possible.

[Embodiment 3]
FIG. 9 is an explanatory diagram showing a conduction structure between the pixel electrode 9a and the drain electrode 6b in the liquid crystal device 100 according to Embodiment 3 of the present invention. FIGS. 9 (a), 9 (b), and 9 (c) 4A is an explanatory view showing the drain electrode 6b (first conductive layer), the contact hole 7d, and the pixel electrode 9a (second conductive layer), and enlarges the vicinity of the contact hole 7d. It is explanatory drawing shown, and GG 'sectional drawing. Since the basic configuration of this embodiment is the same as that of Embodiment 1, common portions are denoted by the same reference numerals and description thereof is omitted.

  In the first and second embodiments, the end portion 9a0 that is electrically connected to the drain electrode 6b in the pixel electrode 9a is the rectangular portion 9at that protrudes from the side portion 9ax of the pixel electrode 9a, but in this embodiment, as shown in FIG. In addition, the end portion 9a0 that is electrically connected to the drain electrode 6b in the pixel electrode 9a includes a part of the side portion 9ax that linearly extends in the second direction X in the pixel electrode 9a. Even when such a configuration is adopted, the tip edge 9a1 located on the one side Y1 in the first direction Y at the end 9a0 of the pixel electrode 9a is the first of the opening edges of the contact hole 7d, as in the first embodiment. From the opening edge portion 7dy located on one side Y1 in the direction Y, it is located on the other side Y2 opposite to the one side Y1 in the first direction Y. That is, the leading edge of the end 9a0 of the pixel electrode 9a does not protrude from the contact hole 7d to the one side Y1. Other configurations are the same as those of the first embodiment.

  Even in such a configuration, as in the first embodiment, there is no need to provide a wide gap between the pixel electrode 9a and the pixel electrode 9a located on the one side Y1 side with respect to the pixel electrode 9a (second inter-pixel region 10h). There is no risk of a short circuit. Therefore, since the degree of freedom in the layout surface of the pixel electrode 9a can be increased, the same effects as in the first embodiment can be obtained, such as the pixel electrode 9a can be formed as wide as possible.

[Configuration of other conductive parts]
FIG. 10 is an explanatory diagram showing a planar configuration of another conductive portion in the liquid crystal device 100 to which the present invention is applied. In the liquid crystal device 100, in addition to the conductive portion between the pixel electrode 9a and the drain electrode 6b, a plurality of conductive portions such as a conductive portion between the semiconductor layer 1a and the data line 6a, a conductive portion between the lower electrode layer 4a and the drain electrode 6b, and the like. Therefore, the conducting structure according to the present invention may be applied to a portion other than the conducting portion between the pixel electrode 9a and the drain electrode 6b. For example, as shown in FIG. 10, the present invention is applied to a portion where the lower electrode layer 4a (first conductive layer) and the drain electrode 6b are electrically connected via the contact hole 7b of the second interlayer insulating film 43. Also good. That is, the tip edge 6b1 of the end 6b0 of the drain electrode 6b does not protrude from the opening edge of the contact hole 7b to one side.

[Other embodiments]
In the above embodiment, the example in which the present invention is applied to the transmissive liquid crystal device 100 has been described. However, the present invention may be applied to the reflective liquid crystal device 100. Particularly in the case of the reflective liquid crystal device 100, the larger the pixel electrode 9a is formed, the more display light can be increased, and a higher quality image can be displayed. Therefore, the effect when the present invention is applied is great.

  In the above embodiment, the example in which the present invention is applied to the liquid crystal device 100 has been described. However, the present invention may be applied to other electro-optical devices such as an organic electroluminescence device.

[Example of mounting on electronic devices]
An electronic apparatus to which the liquid crystal device 100 according to the above-described embodiment is applied will be described. FIG. 11 is a schematic configuration diagram of a projection type display device using a liquid crystal device to which the present invention is applied. FIGS. 11A and 11B are each a projection type display device using a transmission type liquid crystal device 100. FIG. 5 is an explanatory diagram of the projection type display device using the reflective liquid crystal device 100. FIG.

(First example of projection display device)
A projection display device 110 shown in FIG. 11A is a so-called projection-type projection display device that irradiates light onto a screen 111 provided on the viewer side and observes light reflected by the screen 111. . The projection display device 110 includes a light source unit 130 including a light source 112, dichroic mirrors 113 and 114, liquid crystal light valves 115 to 117 (liquid crystal device 100), a projection optical system 118, a cross dichroic prism 119, and a relay. System 120.

  The light source 112 is composed of an ultrahigh pressure mercury lamp that supplies light including red light, green light, and blue light. The dichroic mirror 113 is configured to transmit red light from the light source 112 and reflect green light and blue light. The dichroic mirror 114 is configured to transmit blue light and reflect green light among the green light and the blue light reflected by the dichroic mirror 113. Thus, the dichroic mirrors 113 and 114 constitute a color separation optical system that separates the light emitted from the light source 112 into red light, green light, and blue light.

  Here, between the dichroic mirror 113 and the light source 112, an integrator 121 and a polarization conversion element 122 are sequentially arranged from the light source 112. The integrator 121 is configured to uniformize the illuminance distribution of the light emitted from the light source 112. Further, the polarization conversion element 122 is configured to change the light from the light source 112 into polarized light having a specific vibration direction such as s-polarized light.

  The liquid crystal light valve 115 is a transmissive liquid crystal device 100 that modulates red light transmitted through the dichroic mirror 113 and reflected by the reflection mirror 123 in accordance with an image signal. The liquid crystal light valve 115 includes a λ / 2 phase difference plate 115a, a first polarizing plate 115b, a liquid crystal panel 115c, and a second polarizing plate 115d. Here, the red light incident on the liquid crystal light valve 115 remains s-polarized light because the polarization of the light does not change even if it passes through the dichroic mirror 113.

  The λ / 2 phase difference plate 115a is an optical element that converts s-polarized light incident on the liquid crystal light valve 115 into p-polarized light. The first polarizing plate 115b is a polarizing plate that blocks s-polarized light and transmits p-polarized light. The liquid crystal panel 115c is configured to convert p-polarized light into s-polarized light (circularly polarized light or elliptically polarized light in the case of halftone) by modulation according to the image signal. Furthermore, the second polarizing plate 115d is a polarizing plate that blocks p-polarized light and transmits s-polarized light. Therefore, the liquid crystal light valve 115 is configured to modulate the red light in accordance with the image signal and to emit the modulated red light toward the cross dichroic prism 119.

  Note that the λ / 2 phase difference plate 115a and the first polarizing plate 115b are disposed in contact with a light-transmitting glass plate 115e that does not convert polarized light, and the λ / 2 phase difference plate 115a and the first polarizing plate 115b. It is possible to avoid distortion of 115b due to heat generation.

  The liquid crystal light valve 116 is a transmissive liquid crystal device 100 that modulates green light reflected by the dichroic mirror 114 after being reflected by the dichroic mirror 113 in accordance with an image signal. Similarly to the liquid crystal light valve 115, the liquid crystal light valve 116 includes a first polarizing plate 116b, a liquid crystal panel 116c, and a second polarizing plate 116d. Green light incident on the liquid crystal light valve 116 is s-polarized light that is reflected by the dichroic mirrors 113 and 114 and then incident. The first polarizing plate 116b is a polarizing plate that blocks p-polarized light and transmits s-polarized light. The liquid crystal panel 116c is configured to convert s-polarized light into p-polarized light (circularly polarized light or elliptically polarized light in the case of halftone) by modulation according to the image signal. The second polarizing plate 116d is a polarizing plate that blocks s-polarized light and transmits p-polarized light. Accordingly, the liquid crystal light valve 116 is configured to modulate green light in accordance with the image signal and to emit the modulated green light toward the cross dichroic prism 119.

  The liquid crystal light valve 117 is a transmissive liquid crystal device 100 that modulates blue light reflected by the dichroic mirror 113 and transmitted through the dichroic mirror 114 and then through the relay system 120 in accordance with an image signal. Similarly to the liquid crystal light valves 115 and 116, the liquid crystal light valve 117 includes a λ / 2 retardation film 117a, a first polarizing plate 117b, a liquid crystal panel 117c, and a second polarizing plate 117d. Here, since the blue light incident on the liquid crystal light valve 117 is reflected by the two reflecting mirrors 125a and 125b described later of the relay system 120 after being reflected by the dichroic mirror 113 and transmitted through the dichroic mirror 114, the s-polarized light is reflected. It has become.

  The λ / 2 phase difference plate 117a is an optical element that converts s-polarized light incident on the liquid crystal light valve 117 into p-polarized light. The first polarizing plate 117b is a polarizing plate that blocks s-polarized light and transmits p-polarized light. The liquid crystal panel 117c is configured to convert p-polarized light into s-polarized light (circularly polarized light or elliptically polarized light in the case of halftone) by modulation according to the image signal. Furthermore, the second polarizing plate 117d is a polarizing plate that blocks p-polarized light and transmits s-polarized light. Accordingly, the liquid crystal light valve 117 is configured to modulate blue light in accordance with an image signal and to emit the modulated blue light toward the cross dichroic prism 119. The λ / 2 phase difference plate 117a and the first polarizing plate 117b are disposed in contact with the glass plate 117e.

  The relay system 120 includes relay lenses 124a and 124b and reflection mirrors 125a and 125b. The relay lenses 124a and 124b are provided to prevent light loss due to a long blue light path. Here, the relay lens 124a is disposed between the dichroic mirror 114 and the reflection mirror 125a. The relay lens 124b is disposed between the reflection mirrors 125a and 125b. The reflection mirror 125a is disposed so as to reflect the blue light transmitted through the dichroic mirror 114 and emitted from the relay lens 124a toward the relay lens 124b. The reflection mirror 125b is arranged to reflect the blue light emitted from the relay lens 124b toward the liquid crystal light valve 117.

  The cross dichroic prism 119 is a color combining optical system in which two dichroic films 119a and 119b are arranged orthogonally in an X shape. The dichroic film 119a is a film that reflects blue light and transmits green light, and the dichroic film 119b is a film that reflects red light and transmits green light. Therefore, the cross dichroic prism 119 is configured to combine the red light, the green light, and the blue light modulated by the liquid crystal light valves 115 to 117 and emit the resultant light toward the projection optical system 118.

  Note that light incident on the cross dichroic prism 119 from the liquid crystal light valves 115 and 117 is s-polarized light, and light incident on the cross dichroic prism 119 from the liquid crystal light valve 116 is p-polarized light. Thus, by making the light incident on the cross dichroic prism 119 different types of polarized light, the light incident from the liquid crystal light valves 115 to 117 in the cross dichroic prism 119 can be effectively combined. Here, in general, the dichroic films 119a and 119b are excellent in the reflection characteristics of s-polarized light. Therefore, red light and blue light reflected by the dichroic films 119a and 119b are s-polarized light, and green light transmitted through the dichroic films 119a and 119b is p-polarized light. The projection optical system 118 has a projection lens (not shown) and is configured to project the light combined by the cross dichroic prism 119 onto the screen 111.

(Second example of projection display device)
A projection display device 1000 shown in FIG. 11B includes a light source unit 1021 that generates light source light and a color separation light guide optical that separates the light source light emitted from the light source unit 1021 into three colors of red, green, and blue. A system 1023 and a light modulation unit 1025 illuminated by the light source light of each color emitted from the color separation light guide optical system 1023 are provided. Further, the projection display apparatus 1000 uses a cross dichroic prism 1027 (combining optical system) that synthesizes the image light of each color emitted from the light modulation unit 1025 and the image light that has passed through the cross dichroic prism 1027 on a screen (not shown). A projection optical system 1029 which is a projection optical system for projecting.

  In the projection display apparatus 1000, the light source unit 1021 includes a light source 1021a, a pair of fly-eye optical systems 1021d and 1021e, a polarization conversion member 1021g, and a superimposing lens 1021i. In the present embodiment, the light source unit 1021 includes a reflector 1021f having a paraboloid and emits parallel light. The fly's eye optical systems 1021d and 1021e are composed of a plurality of element lenses arranged in a matrix in a plane orthogonal to the system optical axis, and the light source light is divided and condensed and diverged individually by these element lenses. The polarization conversion member 1021g converts the light source light emitted from the fly-eye optical system 1021e into, for example, only a p-polarized component parallel to the drawing, and supplies it to the optical path downstream optical system. The superimposing lens 1021i allows the plurality of liquid crystal devices 100 provided in the light modulation unit 1025 to uniformly illuminate each other by appropriately converging the light source light that has passed through the polarization conversion member 1021g as a whole.

  The color separation light guide optical system 1023 includes a cross dichroic mirror 1023a, a dichroic mirror 1023b, and reflection mirrors 1023j and 1023k. In the color separation light guide optical system 1023, the substantially white light source light from the light source unit 1021 enters the cross dichroic mirror 1023a. The red (R) light reflected by one of the first dichroic mirrors 1031a constituting the cross dichroic mirror 1023a is reflected by the reflecting mirror 1023j, passes through the dichroic mirror 1023b, and passes through the incident side polarizing plate 1037r and the p-polarized light. Then, the light is incident on the red (R) liquid crystal device 100 as p-polarized light through the wire grid polarizer 1032r that reflects s-polarized light and the optical compensation plate 1039r.

  Further, the green (G) light reflected by the first dichroic mirror 1031a is reflected by the reflecting mirror 1023j, and then also reflected by the dichroic mirror 1023b to transmit the incident-side polarizing plate 1037g and p-polarized light, and s-polarized light. Is incident on the green (G) liquid crystal device 100 as p-polarized light through the wire grid polarizing plate 1032g and the optical compensation plate 1039g.

  On the other hand, the blue (B) light reflected by the other second dichroic mirror 1031b constituting the cross dichroic mirror 1023a is reflected by the reflection mirror 1023k and transmits the incident-side polarizing plate 1037b and the p-polarized light. Then, the light is incident on the liquid crystal device 100 for blue (B) as p-polarized light through the wire grid polarizer 1032b that reflects s-polarized light and the optical compensation plate 1039b.

  Note that the optical compensation plates 1039r, 1039g, and 1039b optically compensate the characteristics of the liquid crystal layer by adjusting the polarization states of the incident light and the emitted light to the liquid crystal device 100.

  In the projection display apparatus 1000 configured as described above, the three colors of light incident through the optical compensation plates 1039r, 1039g, and 1039b are modulated by the liquid crystal devices 100, respectively. At that time, of the modulated light emitted from the liquid crystal device 100, the s-polarized component light is reflected by the wire grid polarizing plates 1032r, 1032g, and 1032b, and crossed dichroic prisms via the outgoing-side polarizing plates 1038r, 1038g, and 1038b. Incident at 1027. In the cross dichroic prism 1027, a first dielectric multilayer film 1027a and a second dielectric multilayer film 1027b intersecting in an X shape are formed, and the first dielectric multilayer film 1027a reflects R light, The other second dielectric multilayer film 1027b reflects B light. Therefore, the three colors of light are combined by the cross dichroic prism 1027 and emitted to the projection optical system 1029. The projection optical system 1029 projects the color image light synthesized by the cross dichroic prism 1027 on a screen (not shown) at a desired magnification.

(Other projection display devices)
In addition, about a projection type display apparatus, you may comprise the LED light source etc. which radiate | emit the light of each color as a light source part, and supply each color light radiate | emitted from this LED light source to another liquid crystal device. .

(Other electronic devices)
As for the liquid crystal device 100 to which the present invention is applied, in addition to the electronic devices described above, mobile phones, personal digital assistants (PDAs), digital cameras, liquid crystal televisions, car navigation devices, video phones, POS terminals, You may use as a direct view type | mold display apparatus in electronic devices, such as an apparatus provided with the touch panel.

4a, lower electrode layer (first conductive layer), 7b, 7d, contact hole, 9a, pixel electrode (second conductive layer), 9a0, 6b0, end, 9a1, 6b1, tip edge, 10 ..Element substrate, 10a ..Image display area, 10w ..Substrate body, 20 ..Counter substrate, 50 ..Liquid crystal layer, 6b ..Drain electrode (first conductive layer, second conductive layer), 43 .. Second interlayer insulating film (insulating film), 44 .. Third interlayer insulating film (insulating film), 100 .. Liquid crystal device, 110, 1000 .. Projection type display device

Claims (5)

A substrate,
A first conductive layer provided on one surface of the substrate;
An insulating film provided on a side opposite to the side on which the substrate is located with respect to the first conductive layer;
A second conductive layer provided on a side opposite to the side where the first conductive layer is located with respect to the insulating film,
The first conductive layer is electrically connected to the second conductive layer through a contact hole provided in the insulating film ,
An opening edge of the contact hole has a first portion in contact with the second conductive layer and the second portion.
A second portion that is not in contact with the conductive layer and a first side extending along the first direction ;
The contact hole, in a plan view as viewed from a direction perpendicular to the substrate, at least a portion of said second portion is disposed so as to protrude along the first direction from said second conductive layer,
The second conductive layer includes a third portion located on the opposite side of the substrate from the insulating film;
A fourth portion in contact with the first conductive layer,
The fourth portion of the second conductive layer is a front portion in a plan view as viewed from a direction perpendicular to the substrate.
Projecting along the first direction from the third portion,
The electro-optical device , wherein the third portion of the second conductive layer includes a portion in contact with the first side . A substrate,
A first conductive layer provided on one surface of the substrate;
An insulating film provided on a side opposite to the side on which the substrate is located with respect to the first conductive layer;
A second conductive layer provided on a side opposite to the side where the first conductive layer is located with respect to the insulating film,
The first conductive layer is electrically connected to the second conductive layer through a contact hole provided in the insulating film ,
An opening edge of the contact hole has a first portion in contact with the second conductive layer and the second portion.
A second portion that is not in contact with the conductive layer and a first side extending along the first direction ;
The contact hole, in a plan view as viewed from a direction perpendicular to the substrate, at least a portion of said second portion is disposed so as to protrude along the first direction from said second conductive layer,
The second conductive layer includes a third portion located on the opposite side of the substrate from the insulating film;
A fourth portion in contact with the first conductive layer,
The fourth portion of the second conductive layer is a front portion in a plan view as viewed from a direction perpendicular to the substrate.
Projecting along the first direction from the third portion,
The electro-optical device , wherein the third portion of the second conductive layer is not in contact with the first side . The first conductive layer is a relay electrode electrically connected to a pixel transistor formed on one surface of the substrate;
The electro-optical device according to claim 1 , wherein the second conductive layer is a pixel electrode. A counter substrate disposed opposite to one surface of the substrate;
Claim, characterized in that it comprises a liquid crystal layer disposed between the substrate and the counter substrate
The electro-optical device according to any one of 1 and 2 . A projection display device comprising the electro-optical device according to claim 4 ,
A projection-type display device comprising: a light source unit that emits illumination light applied to the electro-optical device; and a projection optical system that projects light modulated by the electro-optical device.