JP2013025075A - Electro-optic device, projection type display device and electronic equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electro-optic device, a projection type display device and electronic equipment, in which generation of an unnecessary electric field in a periphery of an end of a pixel electrode can be prevented even when a data line or a first capacitor electrode to which a potential different from that of the pixel electrode is applied are disposed in a region overlapping between adjoining pixel electrodes.SOLUTION: An electro-optic device 100 includes a data line 6a and a first capacitor electrode 5a in a region that overlaps, in a plan view, a second inter-pixel region 10h between pixel electrodes 9a. A relay electrode 7a having conduction with the pixel electrode 9a is disposed in a side closer to the pixel electrode 9a than the electrodes (the first capacitor electrode 5a and the data line 6a). Thereby, an unnecessary electric field generates neither between the pixel electrode and the data line nor between the pixel electrode and the first capacitor electrode.

Description

  The present invention relates to an electro-optical device, a projection display device, and an electronic apparatus in which a plurality of pixel electrodes are provided on one surface of a substrate. More specifically, the present invention relates to a configuration of a region that overlaps between adjacent pixel electrodes among a plurality of pixel electrodes.

  In an element substrate used for an electro-optical device such as a liquid crystal device or an organic electroluminescence device, as shown in FIG. 7A, a plurality of pixel electrodes 9a are provided on one surface side. Between the main body 10w, the switching element 30 provided with the gate electrode 3c, the source electrode 6e, the drain electrode 6b (second capacitor electrode), the first capacitor electrode 5a constituting the drain electrode 6b and the storage capacitor 55, the data line 6a is configured (see, for example, Patent Document 1).

  In the electro-optical device described in Patent Document 1, the first capacitor electrode 5a and the data line 6a are provided in a region overlapping between adjacent pixel electrodes 9a. The data line 6a is provided on the side (upper side) where the pixel electrode 9a is located in a region overlapping between adjacent pixel electrodes 9a.

JP 2004-355028 A

  In the electro-optical device 100, an image signal is applied to the pixel electrode 9 a using a period during which the switching element 30 is on, and the common electrode to which the common potential Vcom is applied to the pixel electrode 9 a and the counter substrate 20. The orientation of the liquid crystal molecules in the liquid crystal layer 50 is controlled by a vertical electric field (electric field indicated by an arrow V1) formed between the pixel 21 and light modulation for each pixel. Such a state is maintained by the charge accumulated in the storage capacitor 55 even during the non-selection period in which the switching element 30 is switched to the off state.

  However, as in the configuration described in Patent Document 1, if the data line 6a is near the pixel electrode 9a, an extra electric field (arrow) is formed between the end of the pixel electrode 9a and the data line 6a during the non-selection period. (Electric field indicated by V2) occurs, and disturbance of the potential distribution occurs near the end of the pixel electrode 9a.

  As shown in FIG. 7B, the problem is that the source electrode is used as the data line 6a as it is, and the relay electrode 7a provided between the data line 6a and the first capacitor electrode 5a is replaced with the second electrode instead of the drain electrode. Even when it is used as a capacitor electrode, the same occurs. That is, since the common potential Vcom is applied to the first capacitor electrode 5a, when the first capacitor electrode 5a is close to the pixel electrode 9a, the end of the pixel electrode 9a and the first capacitor electrode 5a An extra electric field (electric field indicated by an arrow V2) is generated in the meantime, and the potential distribution is disturbed near the end of the pixel electrode 9a.

  In view of the above problems, an object of the present invention is to provide a pixel even when a data line or a first capacitor electrode to which a potential different from the pixel electrode is applied is provided in a region overlapping between adjacent pixel electrodes. An object of the present invention is to provide an electro-optical device, a projection display device, and an electronic apparatus that can prevent an extra electric field from being generated around the end of an electrode.

  In order to solve the above problems, an electro-optical device according to the present invention includes a plurality of pixel electrodes provided on one side of a substrate, a switching element provided between the substrate and the pixel electrodes, and the switching A data line that is provided so as to overlap in a plan view between adjacent pixel electrodes among the plurality of pixel electrodes between the element and the pixel electrode; and A first capacitor electrode provided between the pixel electrodes so as to overlap between the adjacent pixel electrodes in a plan view, to which a potential different from that of the pixel electrode is applied; the first capacitor electrode; and the data line; The pixel electrode is provided so as to overlap with the adjacent pixel electrode in plan view, and is electrically connected to the pixel electrode and supplied from the data line via the switching element. The and having a relay electrode that transmits to the pixel electrode.

  In the present invention, the data line and the first capacitor electrode are provided in a region overlapping in plan view between adjacent pixel electrodes. However, the pixel electrode is provided between the first capacitor electrode and the data line and the pixel electrode. Since the conducting relay electrode is provided, an extra electric field is not generated between the pixel electrode and the data line and between the pixel electrode and the first capacitor electrode. For this reason, the potential distribution is not disturbed near the end of the pixel electrode. Therefore, a high quality image can be displayed.

  In the present invention, the first capacitor electrode is provided between the data line and the relay electrode among the switching element and the pixel electrode, and the relay electrode is dielectric with respect to the first capacitor electrode. It is possible to adopt a configuration in which the dielectric layer and the second capacitor electrode that constitutes the storage capacitor with the first capacitor electrode facing each other through the body layer.

  In the present invention, there is provided a second capacitor electrode which is electrically connected to the pixel electrode and is opposed to the first capacitor electrode through a dielectric layer and forms a storage capacitor with the dielectric layer and the first capacitor electrode. The configuration may be adopted.

  In this case, the data line may be configured to be provided between the first capacitor electrode and the relay electrode among the switching element and the pixel electrode.

  In the present invention, the second capacitor electrode may adopt a configuration provided between the switching element and the first capacitor electrode.

  In the present invention, the second capacitor electrode may adopt a configuration provided between the first capacitor electrode and the relay electrode.

  In the present invention, when the electro-optical device is configured as a liquid crystal device, the substrate has a configuration in which a liquid crystal layer is held between the substrate and a counter substrate disposed to face the one surface.

  The electro-optical device to which the present invention is applied can be used for various display devices such as a direct-view display device in various electronic devices. The electro-optical device to which the present invention is applied can be used for a projection display device. Such a projection display device includes a light source unit that emits illumination light applied to an electro-optical device to which the present invention is applied, and a projection optical system that projects light modulated by the liquid crystal device.

1 is a block diagram illustrating an electrical configuration of an electro-optical device to which the present invention is applied. It is explanatory drawing of the liquid crystal panel used for the electro-optical apparatus to which this invention is applied. It is explanatory drawing of the pixel of the electro-optical apparatus to which this invention is applied. FIG. 6 is an explanatory diagram schematically showing a configuration between pixel electrodes (second inter-pixel region) in an electro-optical device to which the invention is applied. FIG. 10 is an explanatory diagram of an electro-optical device according to a modification of the invention. It is a schematic block diagram of the projection type display apparatus and optical unit to which this invention is applied. It is explanatory drawing of the conventional electro-optical apparatus etc.

  Embodiments of the present invention will be described with reference to the drawings. In the following description, among the various electro-optical devices, in the liquid crystal device and the manufacturing method thereof, the description is focused on an example in which the present invention is applied when the pixel electrode 9a and the relay electrode 7a (conductive layer) are electrically connected. To do. Further, in the following description, the same reference numerals are given to the corresponding portions as much as possible so that the correspondence with the configuration described with reference to FIG. 7 can be easily understood. In the drawings referred to in the following description, the scales are different for each layer and each member so that each layer and each member have a size that can be recognized on the drawing. In addition, when the direction of the current flowing through the pixel transistor is reversed, the source and the drain are switched. In this description, the side to which the pixel electrode is connected (pixel side source / drain region) is the drain, and the data line is connected. The source side (data line side source / drain region) is the source. Further, when describing the layers formed on the element substrate, the upper layer side or the surface side means the side opposite to the side where the substrate body of the element substrate is located (the side on which the counter substrate is located), and the lower layer side means It means the side where the substrate body of the element substrate is located (the side opposite to the side where the counter substrate is located).

[Description of electro-optical device (liquid crystal device)]
(overall structure)
FIG. 1 is a block diagram showing an electrical configuration of an electro-optical device to which the present invention is applied. Note that FIG. 1 is a block diagram showing the electrical configuration to the last, and therefore the layout, such as the direction in which the capacitor electrodes extend, is schematically shown.

  In FIG. 1, an electro-optical device 100 (liquid crystal device) of this embodiment has a liquid crystal panel 100p in a TN (Twisted Nematic) mode or a VA (Vertical Alignment) mode, and a plurality of liquid crystal panels 100p are provided in the central region. Pixels 100a are provided with an image display area 10a (pixel area) arranged in a matrix. In the liquid crystal panel 100p, in the element substrate 10 (see FIG. 2 and the like) to be described later, a plurality of data lines 6a and a plurality of scanning lines 3a extend vertically and horizontally inside the image display region 10a. A pixel 100a is configured at a corresponding position. In each of the plurality of pixels 100a, a switching element 30 (pixel transistor) made of a field effect transistor and a pixel electrode 9a described later are formed. The data line 6 a is electrically connected to the source of the switching element 30, the scanning line 3 a is electrically connected to the gate of the switching element 30, and the pixel electrode 9 a is electrically connected to the drain of the switching element 30. Has been.

  In the element substrate 10, a scanning line driving circuit 104 and a data line driving circuit 101 are provided on the outer peripheral side of the image display region 10 a. The data line driving circuit 101 is electrically connected to each data line 6a, and sequentially supplies the image signal supplied from the image processing circuit to each data line 6a. The scanning line driving circuit 104 is electrically connected to each scanning line 3a, and sequentially supplies a scanning signal to each scanning line 3a.

  In each pixel 100a, the pixel electrode 9a is opposed to a common electrode formed on a counter substrate 20 (see FIG. 2 and the like), which will be described later, via a liquid crystal layer, and constitutes a liquid crystal capacitor 50a. Further, a storage capacitor 55 is added to each pixel 100a in parallel with the liquid crystal capacitor 50a in order to prevent fluctuation of the image signal held in the liquid crystal capacitor 50a. In this embodiment, in order to configure the storage capacitor 55, the first capacitor electrode 5a (capacitor line) straddling the plurality of pixels 100a is formed. In this embodiment, the first capacitor electrode 5a is electrically connected to the common potential line 5c to which the common potential Vcom is applied.

(Configuration of the liquid crystal panel 100p)
FIG. 2 is an explanatory diagram of a liquid crystal panel 100p used in the electro-optical device 100 to which the present invention is applied. FIGS. 2A and 2B each show the liquid crystal panel 100p together with each component from the counter substrate side. It is the top view seen, and its HH 'sectional drawing.

  As shown in FIGS. 2A and 2B, in the liquid crystal panel 100p, the element substrate 10 (element substrate for the electro-optical device) and the counter substrate 20 are bonded to each other with a sealant 107 through a predetermined gap. The sealing material 107 is provided in a frame shape along the outer edge of the counter substrate 20. The sealing material 107 is an adhesive made of a photo-curing resin, a thermosetting resin, or the like, and is mixed with a gap material such as glass fiber or glass beads for setting the distance between both substrates to a predetermined value.

  In the liquid crystal panel 100p having such a configuration, the element substrate 10 and the counter substrate 20 are both square, and the image display area 10a described with reference to FIG. 1 is provided as a square area in the approximate center of the liquid crystal panel 100p. ing. Corresponding to this shape, the sealing material 107 is also provided in a substantially rectangular shape, and a substantially rectangular peripheral region 10b is provided in a frame shape between the inner peripheral edge of the sealing material 107 and the outer peripheral edge of the image display region 10a. Yes. In the element substrate 10, a data line driving circuit 101 and a plurality of terminals 102 are formed along one side of the element substrate 10 outside the image display region 10 a, and scanning lines are formed along other sides adjacent to the one side. A drive circuit 104 is formed. Note that a flexible wiring board (not shown) is connected to the terminal 102, and various potentials and various signals are input to the element substrate 10 through the flexible wiring board.

  As will be described in detail later, on the one surface 10s side of the one surface 10s and the other surface 10t of the element substrate 10, the switching element 30 described with reference to FIG. 1 and the switching element 30 are electrically connected to the image display region 10a. The pixel electrodes 9a to be connected are formed in a matrix, and an alignment film 16 is formed on the upper layer side of the pixel electrodes 9a.

  Further, on the one surface 10s side of the element substrate 10, a dummy pixel electrode 9b (see FIG. 2B) formed simultaneously with the pixel electrode 9a is formed in the peripheral region 10b. For the dummy pixel electrode 9b, a configuration in which the dummy pixel transistor is electrically connected, a configuration in which the dummy pixel transistor is not provided, and a configuration in which the dummy pixel electrode is directly electrically connected to the wiring, or a floating state in which no potential is applied The structure which exists in is adopted. The dummy pixel electrode 9b compresses the height positions of the image display region 10a and the peripheral region 10b when the surface on which the alignment film 16 is formed in the element substrate 10 is flattened by polishing, and the alignment film 16 is formed. This contributes to a flat surface. Further, if the dummy pixel electrode 9b is set to a predetermined potential, it is possible to prevent the disorder of the alignment of the liquid crystal molecules at the outer peripheral side end of the image display region 10a.

  A common electrode 21 is formed on one side of the counter substrate 20 facing the element substrate 10, and an alignment film 26 is formed on the common electrode 21. The common electrode 21 is formed across the plurality of pixels 100a as substantially the entire surface of the counter substrate 20 or a plurality of strip electrodes. Further, a light shielding layer 108 is formed on the lower layer side of the common electrode 21 on one surface side of the counter substrate 20 facing the element substrate 10. In this embodiment, the light shielding layer 108 is formed in a frame shape extending along the outer peripheral edge of the image display region 10a, and functions as a parting. Here, the outer peripheral edge of the light shielding layer 108 is located with a gap between the inner peripheral edge of the sealing material 107 and the light shielding layer 108 and the sealing material 107 do not overlap. In the counter substrate 20, the light shielding layer 108 may be formed as a black matrix portion in an area that overlaps an inter-pixel area sandwiched between adjacent pixel electrodes 9 a.

  In the liquid crystal panel 100p configured as described above, the element substrate 10 is electrically connected between the element substrate 10 and the counter substrate 20 in a region overlapping the corner portion of the counter substrate 20 outside the sealant 107. The inter-substrate conduction electrode 109 is formed. The inter-substrate conducting material 109 a containing conductive particles is disposed on the inter-substrate conducting electrode 109, and the common electrode 21 of the counter substrate 20 is interposed via the inter-substrate conducting material 109 a and the inter-substrate conducting electrode 109. Are electrically connected to the element substrate 10 side. Therefore, the common potential Vcom is applied to the common electrode 21 from the element substrate 10 side. The sealing material 107 is provided along the outer peripheral edge of the counter substrate 20 with substantially the same width dimension. For this reason, the sealing material 107 is substantially rectangular. However, the sealing material 107 is provided so as to pass inside avoiding the inter-substrate conduction electrode 109 in a region overlapping the corner portion of the counter substrate 20, and the corner portion of the sealing material 107 has a substantially arc shape.

  In the electro-optical device 100 having such a configuration, when the pixel electrode 9a and the common electrode 21 are formed of a light-transmitting conductive film such as ITO or IZO, a transmissive liquid crystal device can be configured. On the other hand, when the common electrode 21 is formed of a light-transmitting conductive film such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide) and the pixel electrode 9a is formed of a reflective conductive film such as aluminum, a reflective type is obtained. The liquid crystal device can be configured. When the electro-optical device 100 is a reflection type, light incident from the counter substrate 20 side is modulated while being reflected and emitted by the substrate on the element substrate 10 side, and an image is displayed. In the case where the electro-optical device 100 is a transmissive type, the light incident from one of the element substrate 10 and the counter substrate 20 is modulated while being transmitted through the other substrate and emitted to display an image. .

  The electro-optical device 100 can be used as a color display device of an electronic device such as a mobile computer or a mobile phone. In this case, a color filter (not shown) and a protective film are formed on the counter substrate 20. In the electro-optical device 100, a retardation film, a polarizing plate, and the like are arranged in a predetermined direction with respect to the liquid crystal panel 100p according to the type of the liquid crystal layer 50 to be used and the normally white mode / normally black mode. Is done. Furthermore, the electro-optical device 100 can be used as a light valve for RGB in a projection display device (liquid crystal projector) described later. In this case, each of the RGB electro-optical devices 100 receives light of each color separated through RGB color separation dichroic mirrors as projection light, so that no color filter is formed. .

  In this embodiment, the electro-optical device 100 is a transmissive liquid crystal device used as a RGB light valve in a projection display device to be described later, and light incident from the counter substrate 20 is transmitted through the element substrate 10 and emitted. The explanation will be focused on the case where it is performed. In the present embodiment, the electro-optical device 100 will be described focusing on the case where the liquid crystal layer 50 includes a VA mode liquid crystal panel 100p using a nematic liquid crystal compound having a negative dielectric anisotropy.

(Specific pixel configuration)
3A and 3B are explanatory diagrams of pixels of the electro-optical device 100 to which the present invention is applied. FIGS. 3A and 3B are a plan view of adjacent pixels in the element substrate 10 and FIG. FIG. 6 is a cross-sectional view of the electro-optical device 100 cut at a position corresponding to the FF ′ line. In FIG. 3A, each region is represented by the following line.
Scanning line 3a = thick solid line Semiconductor layer 1a = thin and short dotted line Data line 6a and drain electrode 6b = dot-and-dash line First capacitor electrode 5a and electrode 5b = thin and long broken line Relay electrode 7a = two-dot chain line Pixel electrode 9a = thick and long Short dashed line

  As shown in FIG. 3A, a rectangular pixel electrode 9a is formed on each of the plurality of pixels 100a on the element substrate 10, and a vertical and horizontal inter-pixel region 10f sandwiched between adjacent pixel electrodes 9a. A data line 6a and a scanning line 3a are formed along the overlapping area. More specifically, in the inter-pixel region 10f, the scanning line 3a extends along a region overlapping the first inter-pixel region 10g extending in the first direction (X direction), and the second direction (Y direction). The data line 6a extends along a region that overlaps the second inter-pixel region 10h. Each of the data line 6a and the scanning line 3a extends linearly, and a switching element 30 is formed in a region where the data line 6a and the scanning line 3a intersect. The element substrate 10 is formed with the first capacitance electrode 5a (capacitance electrode) described with reference to FIG. 1 so as to overlap the data line 6a.

  As shown in FIGS. 3A and 3B, the element substrate 10 includes a translucent substrate body 10w such as a quartz substrate and a glass substrate, and a surface of the substrate body 10w on the liquid crystal layer 50 side (on the one surface 10s side). The pixel electrode 9a, the switching element 30 for pixel switching, and the alignment film 16 are mainly formed. The counter substrate 20 includes a translucent substrate main body 20w such as a quartz substrate or a glass substrate, a common electrode 21 formed on a surface of the liquid crystal layer 50 side (one surface facing the element substrate 10), and an alignment film 26. Is the main constituent.

In the element substrate 10, a scanning line 3 a made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal film compound is formed on one surface side of the substrate body 10 w. In this embodiment, the scanning line 3 a is made of a light-shielding conductive film such as tungsten silicide (WSi _x ), and also functions as a light-shielding film for the switching element 30. In this embodiment, the scanning line 3a is made of tungsten silicide having a thickness of about 200 nm. An insulating film such as a silicon oxide film may be provided between the substrate body 10w and the scanning line 3a.

An insulating film 12 such as a silicon oxide film is formed on the upper side of the scanning line 3a on the one surface 10s side of the substrate body 10w, and the switching element 30 including the semiconductor layer 1a on the surface of the insulating film 12 is provided. Is formed. In this embodiment, the insulating film 12 is formed by, for example, a silicon oxide formed by a low pressure CVD method using tetraethoxysilane (Si (OC ₂ H ₅ ) ₄ ) or a plasma CVD method using tetraethoxysilane and oxygen gas. It has a two-layer structure of a film and a silicon oxide film (HTO (High Temperature Oxide) film) formed by a high temperature CVD method.

  The switching element 30 extends in a direction orthogonal to the length direction of the semiconductor layer 1a and a semiconductor layer 1a having a long side direction in the extending direction of the scan line 3a in the intersection region of the scan line 3a and the data line 6a. The gate electrode 3c is provided so as to overlap the central portion in the length direction of the semiconductor layer 1a. In addition, the switching element 30 includes a light-transmissive gate insulating layer 2 between the semiconductor layer 1a and the gate electrode 3c. The semiconductor layer 1a includes a channel region 1g opposed to the gate electrode 3c via the gate insulating layer 2, and includes a source region 1b and a drain region 1c on both sides of the channel region 1g. In this embodiment, the switching element 30 has an LDD structure. Accordingly, each of the source region 1b and the drain region 1c includes the low concentration regions 1b1, 1c1 on both sides of the channel region 1g, and the high concentration in the region adjacent to the low concentration regions 1b1, 1c1 opposite to the channel region 1g. Regions 1b2 and 1c2 are provided.

  The semiconductor layer 1a is composed of a polycrystalline silicon film or the like. The gate insulating layer 2 has a two-layer structure of a first gate insulating layer 2a made of a silicon oxide film obtained by thermally oxidizing the semiconductor layer 1a and a second gate insulating layer 2b made of a silicon oxide film or the like formed by a CVD method or the like. Consists of. The gate electrode 3c is made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal film compound, and contacts that penetrate the second gate insulating layer 2b and the insulating film 12 on both sides of the semiconductor layer 1a. It is electrically connected to the scanning line 3a through the holes 12a and 12b. In this embodiment, the gate electrode 3c has a two-layer structure of a conductive polysilicon film having a thickness of about 100 nm and a tungsten silicide film having a thickness of about 100 nm.

  In this embodiment, when the light after passing through the electro-optical device 100 is reflected by another member, the reflected light is incident on the semiconductor layer 1a, and a malfunction caused by the photocurrent occurs in the switching element 30. In order to prevent this, the scanning line 3a is formed of a light shielding film. However, the scanning line may be formed in the upper layer of the gate insulating layer 2 and a part thereof may be used as the gate electrode 3c. In this case, the scanning line 3a shown in FIG. 3 is formed only for light shielding.

A translucent interlayer insulating film 41 made of a silicon oxide film or the like is formed on the upper layer side of the gate electrode 3c. On the upper layer of the interlayer insulating film 41, the data line 6a and the drain electrode 6b are conductive films of the same type. Is formed by. The interlayer insulating film 41 is made of, for example, a silicon oxide film formed by a plasma CVD method using silane gas (SH ₄ ) and nitrous oxide (N ₂ O).

  The data line 6a and the drain electrode 6b are made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal film compound. In this embodiment, the data line 6a and the drain electrode 6b are formed of a titanium (Ti) film having a thickness of 20 nm, a titanium nitride (TiN) film having a thickness of 50 nm, an aluminum (Al) film having a thickness of 350 nm, and a film thickness. It has a four-layer structure in which 150 nm TiN films are stacked in this order. The data line 6a is electrically connected to the source region 1b (data line side source / drain region) through a contact hole 41a penetrating the interlayer insulating film 41 and the second gate insulating layer 2b. The drain electrode 6b is formed so as to partially overlap the drain region 1c (pixel electrode side source / drain region) of the semiconductor layer 1a in a region overlapping the first inter-pixel region 10g. It is electrically connected to the drain region 1c through a contact hole 41b that penetrates the gate insulating layer 2b.

  A translucent interlayer insulating film 42 made of a silicon oxide film or the like is formed on the upper side of the data line 6a and the drain electrode 6b. The interlayer insulating film 42 is made of, for example, a silicon oxide film formed by a plasma CVD method using tetraethoxysilane and oxygen gas.

  On the upper layer side of the interlayer insulating film 42, the first capacitor electrode 5a and the electrode 5b are formed of the same kind of conductive film. The first capacitor electrode 5a and the electrode 5b are made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal film compound. In this embodiment, the first capacitor electrode 5a and the electrode 5b have a two-layer structure of an Al film having a thickness of about 350 nm and a TiN film having a thickness of about 150 nm. Similar to the data line 6a, the first capacitor electrode 5a extends along a region overlapping the second inter-pixel region 10h. The electrode 5b is formed so as to partially overlap the drain electrode 6b in a region overlapping the first inter-pixel region 10g, and is electrically connected to the drain electrode 6b through a contact hole 42a penetrating the interlayer insulating film 42. Yes.

  A light-transmitting insulating film 44 such as a silicon oxide film is formed as an etching stopper layer on the upper layer side of the first capacitor electrode 5a and the electrode 5b, and the insulating film 44 has a region overlapping the first capacitor electrode 5a. An opening 44b is formed in the opening. In this embodiment, the insulating film 44 is made of a silicon oxide film or the like formed by a plasma CVD method using tetraethoxysilane and oxygen gas. Here, although not shown in FIG. 3A, the opening 44b is a portion extending along a region overlapping with the first inter-pixel region 10g starting from the intersection region between the data line 6a and the scanning line 3a. And a portion extending along a region overlapping the second inter-pixel region 10h starting from the intersection region of the data line 6a and the scanning line 3a.

  A translucent dielectric layer 40 is formed on the upper layer side of the insulating film 44, and a relay electrode 7 a is formed on the upper layer side of the dielectric layer 40. The relay electrode 7a is made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal film compound. In this embodiment, the relay electrode 7a is made of a TiN film having a thickness of about 300 nm. As the dielectric layer 40, a silicon compound such as a silicon oxide film or a silicon nitride film can be used, and an aluminum oxide film, a titanium oxide film, a tantalum oxide film, a niobium oxide film, a hafnium oxide film, a lanthanum oxide film, zirconium A dielectric layer having a high dielectric constant such as an oxide film can be used. The relay electrode 7a has a portion extending along the region overlapping the first inter-pixel region 10g starting from the intersection region between the data line 6a and the scanning line 3a, and the intersection region between the data line 6a and the scanning line 3a. And a portion extending along a region overlapping with the second inter-pixel region 10h. Accordingly, a portion of the relay electrode 7a that extends along the region overlapping the second inter-pixel region 10h overlaps the first capacitor electrode 5a via the dielectric layer 40 in the opening 44b of the insulating film 44. And is used as a second capacitor electrode. Thus, in this embodiment, the first capacitor electrode 5a, the dielectric layer 40, and the relay electrode 7a (second capacitor electrode) constitute the storage capacitor 55 in a region overlapping the first inter-pixel region 10g. .

  In the relay electrode 7a, a portion extending along the region overlapping the first inter-pixel region 10g partially overlaps the electrode 5b, and a contact hole 44a penetrating the dielectric layer 40 and the insulating film 44 is formed. To the electrode 5b.

  A translucent interlayer insulating film 45 is formed on the upper layer side of the relay electrode 7a, and a pixel made of a translucent conductive film such as an ITO film having a thickness of about 20 nm is formed on the upper layer side of the interlayer insulating film 45. Electrode 9a is formed. The interlayer insulating film 45 is made of, for example, a silicon oxide film formed by a plasma CVD method using tetraethoxysilane and oxygen gas. The pixel electrode 9a partially overlaps the relay electrode 7a in the vicinity of the intersection region between the data line 6a and the scanning line 3a, and relays with the pixel electrode 9a through a contact hole 45a formed in the interlayer insulating film 45. The electrode 7a is electrically connected.

An alignment film 16 is formed on the surface of the pixel electrode 9a. The alignment film 16 is made of a resin film such as polyimide or an oblique deposition film such as a silicon oxide film. In this embodiment, the alignment film 16 is an obliquely deposited film of SiO _x (x <2), SiO ₂ , TiO ₂ , MgO, Al ₂ O ₃ , In ₂ O ₃ , Sb ₂ O ₃ , Ta ₂ O ₅ or the like. An inorganic alignment film (vertical alignment film).

The counter substrate 20 is made of a light-transmitting conductive film such as an ITO film on the surface of the light-transmitting substrate body 20 w such as a quartz substrate or a glass substrate on the liquid crystal layer 50 side (surface facing the element substrate 10). A common electrode 21 is formed, and an alignment film 26 is formed so as to cover the common electrode 21. Similar to the alignment film 16, the alignment film 26 is made of a resin film such as polyimide or an oblique deposition film such as a silicon oxide film. In this embodiment, the alignment film 26 is an obliquely deposited film such as SiO _x (x <2), SiO ₂ , TiO ₂ , MgO, Al ₂ O ₃ , In ₂ O ₃ , Sb ₂ O ₃ , Ta ₂ O _5. An inorganic alignment film (vertical alignment film). The alignment films 16 and 26 vertically align the nematic liquid crystal compound having negative dielectric anisotropy used for the liquid crystal layer 50, and the liquid crystal panel 100p operates as a normally black VA mode.

  Note that the data line driving circuit 101 and the scanning line driving circuit 104 described with reference to FIGS. 1 and 2 are complementary transistor circuits each including an n-channel driving transistor and a p-channel driving transistor. Etc. are configured. Here, the driving transistor is formed by utilizing a part of the manufacturing process of the switching element 30. Therefore, the region where the data line driving circuit 101 and the scanning line driving circuit 104 are formed in the element substrate 10 also has a cross-sectional configuration substantially similar to the cross-sectional configuration shown in FIG.

(Positional relationship of each electrode in the inter-pixel region 10f)
FIG. 4 is an explanatory diagram schematically showing a configuration between pixel electrodes (second inter-pixel region 10h) in the electro-optical device 100 to which the present invention is applied.

  As shown in FIG. 4, in the electro-optical device 100 of this embodiment, a plurality of pixel electrodes 9a are provided on the one surface 10s side of the substrate body 10w, and the switching element 30 is provided between the substrate body 10w and the pixel electrodes 9a. Is provided. Further, the data line 6a is provided between the switching element 30 and the pixel electrode 9a so as to overlap the second inter-pixel region 10h (between adjacent pixel electrodes 9a) in plan view. Further, the first capacitor electrode 5a is provided between the switching element 30 and the pixel electrode 9a so as to overlap the second inter-pixel region 10h (between adjacent pixel electrodes 9a) in plan view. A common potential Vcom different from the potential Vsig applied to the pixel electrode 9a is applied to the one capacitor electrode 5a. In the present embodiment, the first capacitor electrode 5a is provided between the data line 6a and the relay electrode 7a among the switching element 30 and the pixel electrode 9a. That is, the first capacitor electrode 5a is provided on the upper layer side (the pixel electrode 9a side) from the data line 6a.

  Further, a relay electrode 7a is also provided in a region overlapping the second inter-pixel region 10h in plan view, and the relay electrode 7a is electrically connected to the pixel electrode 9a. For this reason, the relay electrode 7a is always at the same potential (potential Vsig) as the pixel electrode 9a.

  Here, the relay electrode 7a is provided between the first capacitor electrode 5a and the data line 6a and the pixel electrode 9a. In this embodiment, since the first capacitor electrode 5a is provided on the upper layer side (pixel electrode 9a side) from the data line 6a, the relay electrode 7a is provided on the upper layer side (pixel electrode 9a side) from the first capacitor electrode 5a. ) And constitutes the second capacitor electrode of the storage capacitor 55.

(Main effects of this form)
As described above, in the electro-optical device 100 according to this embodiment, the data line 6a and the first capacitor electrode 5a are provided in the region overlapping the second inter-pixel region 10h in plan view. A relay electrode 7a that is electrically connected to the pixel electrode 9a is provided on the pixel electrode 9a side of the capacitor electrode 5a and the data line 6a). Therefore, no extra electric field is generated between the pixel electrode and the data line and between the pixel electrode and the first capacitor electrode. Therefore, since the potential distribution is not disturbed near the end of the pixel electrode 9a, a high-quality image can be displayed.

  In other words, in the electro-optical device 100, an image signal is applied to the pixel electrode 9a using a period in which the switching element 30 is in the on state, and the common potential Vcom is applied to the pixel electrode 9a and the counter substrate 20 in common. The orientation of the liquid crystal molecules in the liquid crystal layer 50 is controlled by a vertical electric field (electric field indicated by an arrow V1) formed between the electrodes 21 and light modulation is performed for each pixel. Such a state is maintained by the charge accumulated in the storage capacitor 55 even during the non-selection period in which the switching element 30 is switched to the off state.

  The pixel electrode 9a during the non-selection period is easily affected by the potential of surrounding electrodes and the like, but in this embodiment, the relay electrode 7a is interposed between the pixel electrode 9a and the data line 6a. In this embodiment, the relay electrode 7a is interposed between the pixel electrode 9a and the first capacitor electrode 5a. For this reason, since the extra electric field described with reference to FIG. 7 and the like is not generated, the potential distribution is not disturbed in the vicinity of the end with the pixel electrode 9a, and the alignment of the liquid crystal molecules is also performed at the end of the pixel electrode 9a. Can be suitably controlled. In addition, since it is possible to reduce a driving loss that occurs when the pixel electrode 9a is driven by the data line 6a, power saving can be achieved.

[Modification of the present invention]
FIGS. 5A and 5B are explanatory diagrams of an electro-optical device 100 according to a modification of the present invention. FIGS. 5A and 5B illustrate pixel electrodes (first) in the electro-optical device 100 according to the first modification of the present invention. 2 is an explanatory diagram schematically showing the configuration of the inter-pixel region 10h) and an explanatory diagram schematically showing the configuration of the pixel electrodes (second inter-pixel region 10h) in the electro-optical device 100 according to Modification 2 of the present invention. It is.

  As shown in FIGS. 5A and 5B, the electro-optical device 100 according to the present embodiment is also provided on the one surface 10 s side of the substrate body 10 w as in the electro-optical device 100 described with reference to FIGS. 1 to 4. A plurality of pixel electrodes 9a are provided, and a switching element 30 is provided between the substrate body 10w and the pixel electrodes 9a. Further, the data line 6a is provided between the switching element 30 and the pixel electrode 9a so as to overlap the second inter-pixel region 10h (between adjacent pixel electrodes 9a) in plan view. Further, the first capacitor electrode 5a is provided between the switching element 30 and the pixel electrode 9a so as to overlap the second inter-pixel region 10h (between adjacent pixel electrodes 9a) in plan view. A common potential Vcom different from the potential Vsig applied to the pixel electrode 9a is applied to the one capacitor electrode 5a.

  Further, a relay electrode 7a is also provided in a region overlapping the second inter-pixel region 10h in plan view, and the relay electrode 7a is electrically connected to the pixel electrode 9a. For this reason, the relay electrode 7a is always at the same potential (potential Vsig) as the pixel electrode 9a. The relay electrode 7a is provided between the first capacitor electrode 5a and the data line 6a and the pixel electrode 9a.

  Here, the data line 6a is provided between the first capacitive electrode 5a and the relay electrode 7a among the switching element 30 and the pixel electrode 9a. That is, the data line 6a is provided on the upper layer side (the pixel electrode 9a side) from the first capacitor electrode 5a. For this reason, the first capacitor electrode 5a is provided on the opposite side of the data line 6a from the first capacitor electrode 5a (the pixel electrode 9a side). The data line 6a is electrically connected to the switching element 30 through the source electrode 6e.

  In the electro-optical device 100 configured as described above, the relay electrode 7a is not used as the second capacitor electrode of the storage capacitor 55, and the element substrate 10 is electrically connected to the pixel electrode 9a and the first capacitor electrode 5a. A second capacitor electrode that constitutes a storage capacitor with the dielectric layer and the first capacitor electrode 5a is configured to face each other via a dielectric layer (not shown).

  More specifically, among the electro-optical devices 100 shown in FIGS. 5A and 5B, the electro-optical device 100 shown in FIG. 5A has a gap between the first capacitor electrode 5 a and the switching element 30. The provided drain electrode 6b is used as the second capacitor electrode 8a.

  In the electro-optical device 100 shown in FIG. 5B, the second capacitor electrode 8a is provided between the first capacitor electrode 5a and the relay electrode 7a (the first relay electrode 5a and the data line 6a). The second capacitor electrode 8a is electrically connected to the drain electrode 6b and the relay electrode 7a.

  In the electro-optical device 100 configured as described above, similarly to the electro-optical device 100 described with reference to FIGS. 1 to 4, the data line 6 a and the first capacitor electrode are formed in a region overlapping the second inter-pixel region 10 h in plan view. 5a is provided, but a relay electrode 7a that is electrically connected to the pixel electrode 9a is provided on the pixel electrode 9a side from these electrodes (the first capacitor electrode 5a and the data line 6a). Therefore, no extra electric field is generated between the pixel electrode and the data line and between the pixel electrode and the first capacitor electrode. Therefore, since the potential distribution is not disturbed near the end of the pixel electrode 9a, a high-quality image can be displayed.

[Other Modifications of the Present Invention]
As described with reference to FIG. 5, a configuration using another second capacitor electrode without using the relay electrode 7 a as the second capacitor electrode of the storage capacitor 55 will be described with reference to FIGS. 1 to 4. You may employ | adopt in the form which did. In the form described with reference to FIG. 5, the data line 6 a is electrically connected to the switching element 30 via the source electrode 6 e, but the data line 6 a is directly connected to the switching element 30. An electrically connected configuration may be employed.

[Other embodiments]
In the above embodiment, the example in which the present invention is applied to the transmission type electro-optical device 100 has been described. However, the present invention may be applied to the reflection type electro-optical device 100.

  In the above embodiment, the example in which the present invention is applied to the electro-optical device 100 has been described. However, the present invention may be applied to an electro-optical device other than the electro-optical device 100 such as an organic electroluminescence device.

[Example of mounting on electronic devices]
(Configuration example of projection display device and optical unit)
FIG. 6 is a schematic configuration diagram of a projection display device and an optical unit to which the present invention is applied, and FIGS. 6A and 6B each illustrate a projection display device using a transmissive electro-optical device. FIG. 4 is an explanatory diagram of a projection display device using a reflection type electro-optical device.

  6A is an example using a transmissive liquid crystal panel as a liquid crystal panel, whereas the projection display apparatus 1000 shown in FIG. 6B is a liquid crystal panel. This is an example using a reflective liquid crystal panel. However, as will be described below, each of the projection display devices 110 and 1000 includes a light source unit 130 and 1021, and a plurality of electro-optical devices 100 to which light in different wavelength ranges is supplied from the light source units 130 and 1021. Cross dichroic prisms 119 and 1027 (light combining optical system) that combine and output the light emitted from the plurality of electro-optical devices 100, and projection optical systems 118 and 1029 that project the light combined by the light combining optical system. Have. In the projection display devices 110 and 1000, an optical unit 200 including the electro-optical device 100 and cross dichroic prisms 119 and 1027 (light combining optical system) is used.

(First example of projection display device)
A projection display device 110 shown in FIG. 6A is a so-called projection type projection display device that irradiates light onto a screen 111 provided on the viewer side and observes light reflected by the screen 111. . The projection display device 110 includes a light source unit 130 including a light source 112, dichroic mirrors 113 and 114, liquid crystal light valves 115 to 117, a projection optical system 118, a cross dichroic prism 119 (combining optical system), and a relay. System 120.

  The light source 112 is composed of an ultrahigh pressure mercury lamp that supplies light including red light R, green light G, and blue light B. The dichroic mirror 113 is configured to transmit the red light R from the light source 112 and reflect the green light G and the blue light B. The dichroic mirror 114 is configured to transmit the blue light B and reflect the green light G out of the green light G and the blue light B reflected by the dichroic mirror 113. Thus, the dichroic mirrors 113 and 114 constitute a color separation optical system that separates the light emitted from the light source 112 into red light R, green light G, and blue light B.

  Here, between the dichroic mirror 113 and the light source 112, an integrator 121 and a polarization conversion element 122 are arranged in order from the light source 112. The integrator 121 is configured to uniformize the illuminance distribution of the light emitted from the light source 112. Further, the polarization conversion element 122 is configured to change the light from the light source 112 into polarized light having a specific vibration direction such as s-polarized light.

  The liquid crystal light valve 115 is a transmissive electro-optical device that modulates red light transmitted through the dichroic mirror 113 and reflected by the reflecting mirror 123 in accordance with an image signal. The liquid crystal light valve 115 includes a λ / 2 phase difference plate 115a, a first polarizing plate 115b, an electro-optical device 100 (red liquid crystal panel 100R), and a second polarizing plate 115d. Here, the red light R incident on the liquid crystal light valve 115 remains as s-polarized light because the polarization of the light does not change even if it passes through the dichroic mirror 113.

  The λ / 2 phase difference plate 115a is an optical element that converts s-polarized light incident on the liquid crystal light valve 115 into p-polarized light. The first polarizing plate 115b is a polarizing plate that blocks s-polarized light and transmits p-polarized light. The electro-optical device 100 (the red liquid crystal panel 100R) is configured to convert p-polarized light into s-polarized light (circularly polarized light or elliptically polarized light in the case of halftone) by modulation according to an image signal. Furthermore, the second polarizing plate 115d is a polarizing plate that blocks p-polarized light and transmits s-polarized light. Therefore, the liquid crystal light valve 115 is configured to modulate the red light R according to the image signal and emit the modulated red light R toward the cross dichroic prism 119.

  Note that the λ / 2 phase difference plate 115a and the first polarizing plate 115b are disposed in contact with a light-transmitting glass plate 115e that does not convert the polarization, and the λ / 2 phase difference plate 115a and the first polarization plate 115b are arranged in contact with each other. It is possible to avoid the polarizing plate 115b from being distorted by heat generation.

  The liquid crystal light valve 116 is a transmissive electro-optical device that modulates green light G reflected by the dichroic mirror 114 after being reflected by the dichroic mirror 113 in accordance with an image signal. Similar to the liquid crystal light valve 115, the liquid crystal light valve 116 includes a first polarizing plate 116b, an electro-optical device 100 (green liquid crystal panel 100G), and a second polarizing plate 116d. Green light G incident on the liquid crystal light valve 116 is s-polarized light that is reflected by the dichroic mirrors 113 and 114 and then incident. The first polarizing plate 116b is a polarizing plate that blocks p-polarized light and transmits s-polarized light. The electro-optical device 100 (green liquid crystal panel 100G) is configured to convert s-polarized light into p-polarized light (circularly polarized light or elliptically polarized light in the case of halftone) by modulation according to an image signal. The second polarizing plate 116d is a polarizing plate that blocks s-polarized light and transmits p-polarized light. Therefore, the liquid crystal light valve 116 is configured to modulate the green light G in accordance with the image signal and emit the modulated green light G toward the cross dichroic prism 119.

  The liquid crystal light valve 117 is a transmissive electro-optical device that modulates the blue light B that is reflected by the dichroic mirror 113, passes through the dichroic mirror 114, and passes through the relay system 120 in accordance with an image signal. Like the liquid crystal light valves 115 and 116, the liquid crystal light valve 117 includes a λ / 2 phase difference plate 117a, a first polarizing plate 117b, an electro-optical device 100 (blue liquid crystal panel 100B), and a second polarizing plate 117d. I have. Here, the blue light B incident on the liquid crystal light valve 117 is reflected by two reflecting mirrors 125a and 125b (to be described later) of the relay system 120 after being reflected by the dichroic mirror 113 and transmitted through the dichroic mirror 114. It has become.

  The λ / 2 phase difference plate 117a is an optical element that converts s-polarized light incident on the liquid crystal light valve 117 into p-polarized light. The first polarizing plate 117b is a polarizing plate that blocks s-polarized light and transmits p-polarized light. The electro-optical device 100 (blue liquid crystal panel 100B) is configured to convert p-polarized light to s-polarized light (circularly polarized light or elliptically polarized light if it is a halftone) by modulation according to an image signal. Furthermore, the second polarizing plate 117d is a polarizing plate that blocks p-polarized light and transmits s-polarized light. Therefore, the liquid crystal light valve 117 is configured to modulate the blue light B according to the image signal and emit the modulated blue light B toward the cross dichroic prism 119. The λ / 2 phase difference plate 117a and the first polarizing plate 117b are arranged in contact with the glass plate 117e.

  The relay system 120 includes relay lenses 124a and 124b and reflection mirrors 125a and 125b. The relay lenses 124a and 124b are provided to prevent light loss due to the long optical path of the blue light B. Here, the relay lens 124a is disposed between the dichroic mirror 114 and the reflection mirror 125a. The relay lens 124b is disposed between the reflection mirrors 125a and 125b. The reflection mirror 125a is disposed so as to reflect the blue light B transmitted through the dichroic mirror 114 and emitted from the relay lens 124a toward the relay lens 124b. The reflection mirror 125b is disposed so as to reflect the blue light B emitted from the relay lens 124b toward the liquid crystal light valve 117.

  The cross dichroic prism 119 is a color combining optical system in which two dichroic films 119a and 119b are arranged orthogonally in an X shape. The dichroic film 119a is a film that reflects blue light B and transmits green light G, and the dichroic film 119b is a film that reflects red light R and transmits green light G. Therefore, the cross dichroic prism 119 is configured to combine the red light R, the green light G, and the blue light B modulated by each of the liquid crystal light valves 115 to 117 and emit the resultant light toward the projection optical system 118. Yes.

  Note that light incident on the cross dichroic prism 119 from the liquid crystal light valves 115 and 117 is s-polarized light, and light incident on the cross dichroic prism 119 from the liquid crystal light valve 116 is p-polarized light. Thus, by making the light incident on the cross dichroic prism 119 into different types of polarized light, the light incident from the liquid crystal light valves 115 to 117 in the cross dichroic prism 119 can be synthesized. Here, in general, the dichroic films 119a and 119b are excellent in s-polarized reflection transistor characteristics. For this reason, red light R and blue light B reflected by the dichroic films 119a and 119b are s-polarized light, and green light G transmitted through the dichroic films 119a and 119b is p-polarized light. The projection optical system 118 has a projection lens (not shown) and is configured to project the light combined by the cross dichroic prism 119 onto the screen 111.

(Second example of projection display device)
A projection type display device 1000 shown in FIG. 6B has a light source unit 1021 that generates light source light, and light source light emitted from the light source unit 1021 in three colors of red light R, green light G, and blue light B. It has a color separation light guide optical system 1023 that separates into color light, and a light modulator 1025 that is illuminated by the light source light of each color emitted from the color separation light guide optical system 1023. Further, the projection display apparatus 1000 uses a cross dichroic prism 1027 (combining optical system) that synthesizes the image light of each color emitted from the light modulation unit 1025 and the image light that has passed through the cross dichroic prism 1027 on a screen (not shown). A projection optical system 1029 for projecting.

  In the projection display apparatus 1000, the light source unit 1021 includes a light source 1021a, a pair of fly-eye optical systems 1021d and 1021e, a polarization conversion member 1021g, and a superimposing lens 1021i. In the present embodiment, the light source unit 1021 includes a reflector 1021f having a paraboloid and emits parallel light. The fly-eye optical systems 1021d and 1021e are composed of a plurality of element lenses arranged in a matrix in a plane orthogonal to the system optical axis, and the light source light is divided and condensed and diverged individually by these element lenses. The polarization conversion member 1021g converts the light source light emitted from the fly-eye optical system 1021e into, for example, only a p-polarized component parallel to the drawing, and supplies it to the optical path downstream optical system. The superimposing lens 1021i allows the plurality of electro-optical devices 100 provided in the light modulation unit 1025 to be uniformly superimposed and illuminated by appropriately converging the light source light that has passed through the polarization conversion member 1021g as a whole.

  The color separation light guide optical system 1023 includes a cross dichroic mirror 1023a, a dichroic mirror 1023b, and reflection mirrors 1023j and 1023k. In the color separation light guide optical system 1023, the substantially white light source light from the light source unit 1021 enters the cross dichroic mirror 1023a. The red light R reflected by one of the first dichroic mirrors 1031a constituting the cross dichroic mirror 1023a is reflected by the reflecting mirror 1023j, passes through the dichroic mirror 1023b, and transmits the incident side polarizing plate 1037r and p-polarized light. The light enters the electro-optical device 100 (red liquid crystal panel 100R) as p-polarized light through the wire grid polarizer 1032r that reflects s-polarized light and the optical compensation plate 1039r.

  Further, the green light G reflected by the first dichroic mirror 1031a is reflected by the reflecting mirror 1023j and then also reflected by the dichroic mirror 1023b to transmit the incident side polarizing plate 1037g and p-polarized light while reflecting s-polarized light. The light is incident on the electro-optical device 100 (green liquid crystal panel 100G) as p-polarized light via the wire grid polarizing plate 1032g and the optical compensation plate 1039g.

  On the other hand, the blue light B reflected by the other second dichroic mirror 1031b constituting the cross dichroic mirror 1023a is reflected by the reflection mirror 1023k and transmits the incident-side polarizing plate 1037b, p-polarized light, while s The light enters the electro-optical device 100 (blue liquid crystal panel 100B) as p-polarized light through the wire grid polarizing plate 1032b that reflects the polarized light and the optical compensation plate 1039b. The optical compensation plates 1039r, 1039g, and 1039b optically compensate for the characteristics of the liquid crystal layer by adjusting the polarization state of the incident light and the emitted light to the electro-optical device 100.

  In the projection display apparatus 1000 configured as described above, the three colors of light incident through the optical compensation plates 1039r, 1039g, and 1039b are modulated by the electro-optical devices 100, respectively. At this time, of the modulated light emitted from the electro-optical device 100, the s-polarized component light is reflected by the wire grid polarizers 1032r, 1032g, and 1032b, and cross-dichroic via the exit-side polarizers 1038r, 1038g, and 1038b. Incident on the prism 1027. The cross dichroic prism 1027 is formed with a first dielectric multilayer film 1027a and a second dielectric multilayer film 1027b that intersect in an X shape, and the first dielectric multilayer film 1027a reflects the red light R. The other second dielectric multilayer film 1027b reflects the blue light B. Therefore, the three colors of light are combined by the cross dichroic prism 1027 and emitted to the projection optical system 1029. The projection optical system 1029 projects the color image light combined by the cross dichroic prism 1027 onto a screen (not shown) at a desired magnification.

(Other projection display devices)
In addition, about a projection type display apparatus, you may comprise the LED light source etc. which radiate | emit the light of each color as a light source part, and supply each color light radiate | emitted from this LED light source to another liquid crystal device. .

(Other electronic devices)
As for the electro-optical device 100 to which the present invention is applied, in addition to the electronic devices described above, mobile phones, personal digital assistants (PDAs), digital cameras, liquid crystal televisions, car navigation devices, video phones, POS terminals In addition, it may be used as a direct-view display device in an electronic device such as a device provided with a touch panel.

5a ··· First capacitance electrode, 6a · · Data line, 7a · · Relay electrode, 8a · · Second capacitance electrode, 9a · · Pixel electrode, 10 · · Element substrate, 10f · · Inter-pixel region, 10g · · First inter-pixel region, 10h, second inter-pixel region, 10w, substrate body, 30, switching element (pixel transistor), 55, storage capacity, 100, electro-optical device, 110, 1000, projection Type display

Claims (9)

A plurality of pixel electrodes provided on one side of the substrate;
A switching element provided between the substrate and the pixel electrode;
A data line provided between the switching element and the pixel electrode so as to overlap between adjacent pixel electrodes among the plurality of pixel electrodes in a plan view, and electrically connected to the switching element;
A first capacitor electrode provided between the switching element and the pixel electrode so as to overlap between the adjacent pixel electrodes in a plan view, to which a potential different from that of the pixel electrode is applied;
The first capacitor electrode, the data line, and the pixel electrode are provided so as to overlap each other between the adjacent pixel electrodes in a plan view, and are electrically connected to the pixel electrode and the data line via the switching element. A relay electrode for transmitting the signal supplied from the pixel electrode to the pixel electrode;
An electro-optical device comprising: The first capacitor electrode is provided between the data line and the relay electrode among the switching element and the pixel electrode.
2. The relay electrode is a second capacitor electrode that is opposed to the first capacitor electrode with a dielectric layer interposed therebetween and constitutes a storage capacitor with the dielectric layer and the first capacitor electrode. The electro-optical device according to 1.   A second capacitor electrode that is electrically connected to the pixel electrode and is opposed to the first capacitor electrode with a dielectric layer interposed between the dielectric layer and the first capacitor electrode and constitutes a storage capacitor; The electro-optical device according to claim 1.   4. The electro-optical device according to claim 3, wherein the data line is provided between the first capacitor electrode and the relay electrode among the switching element and the pixel electrode. 5.   5. The electro-optical device according to claim 3, wherein the second capacitor electrode is provided between the switching element and the first capacitor electrode.   5. The electro-optical device according to claim 3, wherein the second capacitor electrode is provided between the first capacitor electrode and the relay electrode.   The electro-optical device according to claim 1, wherein the substrate holds a liquid crystal layer between the substrate and a counter substrate disposed to face the one surface. A projection display device comprising the electro-optical device according to any one of claims 1 to 7,
A projection-type display device comprising: a light source unit that emits illumination light applied to the electro-optical device; and a projection optical system that projects light modulated by the electro-optical device.   An electronic apparatus comprising the electro-optical device according to claim 1.

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