JP2012119678A - 誘電性組成物 - Google Patents

誘電性組成物 Download PDF

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Publication number
JP2012119678A
JP2012119678A JP2011253263A JP2011253263A JP2012119678A JP 2012119678 A JP2012119678 A JP 2012119678A JP 2011253263 A JP2011253263 A JP 2011253263A JP 2011253263 A JP2011253263 A JP 2011253263A JP 2012119678 A JP2012119678 A JP 2012119678A
Authority
JP
Japan
Prior art keywords
dielectric
dielectric material
layer
low
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011253263A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012119678A5 (enrdf_load_stackoverflow
Inventor
Yiliang Wu
イリアン・ウー
Yulin Wang
ユーリン・ワン
Liu Pin
ピン・リウ
Shin Hu Nung
ナン−シン・フー
Anthony Wigglesworth
アンソニー・ウィグルスワース
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of JP2012119678A publication Critical patent/JP2012119678A/ja
Publication of JP2012119678A5 publication Critical patent/JP2012119678A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/478—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a layer of composite material comprising interpenetrating or embedded materials, e.g. TiO2 particles in a polymer matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Formation Of Insulating Films (AREA)
JP2011253263A 2010-12-01 2011-11-18 誘電性組成物 Pending JP2012119678A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/957,461 US8821962B2 (en) 2010-12-01 2010-12-01 Method of forming dielectric layer with a dielectric composition
US12/957,461 2010-12-01

Publications (2)

Publication Number Publication Date
JP2012119678A true JP2012119678A (ja) 2012-06-21
JP2012119678A5 JP2012119678A5 (enrdf_load_stackoverflow) 2014-12-25

Family

ID=46152595

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011253263A Pending JP2012119678A (ja) 2010-12-01 2011-11-18 誘電性組成物

Country Status (3)

Country Link
US (1) US8821962B2 (enrdf_load_stackoverflow)
JP (1) JP2012119678A (enrdf_load_stackoverflow)
CN (1) CN102487125B (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6647780B2 (ja) * 2014-10-27 2020-02-14 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 有機金属材料および方法
GB2534600A (en) * 2015-01-29 2016-08-03 Cambridge Display Tech Ltd Organic thin film transistors
WO2018060015A1 (en) 2016-09-27 2018-04-05 Basf Se Star-shaped styrene polymers with enhanced glass transition temperature
CN107915910A (zh) * 2017-11-15 2018-04-17 苏州科茂电子材料科技有限公司 添加聚异丁烯的介电材料制备方法
US20200031040A1 (en) 2018-07-24 2020-01-30 Xerox Corporation Printing process and system
CN113410384B (zh) * 2021-06-28 2023-04-07 西南大学 一种用于柔性场效应晶体管的聚合物介电层的制备方法
CN114806035B (zh) * 2022-05-09 2024-04-19 深圳市嘉凯勒实业有限公司 一种poss-酞菁铜介电单体改性聚苯乙烯材料的制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010135793A (ja) * 2008-12-05 2010-06-17 Xerox Corp 電子デバイス
JP2010245379A (ja) * 2009-04-08 2010-10-28 Hitachi Chem Co Ltd 絶縁体インク、絶縁被覆層の作製方法及び半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8418591D0 (en) * 1984-07-20 1984-08-22 Bp Chem Int Ltd Polymer composition
JPH0618986B2 (ja) * 1987-10-19 1994-03-16 信越化学工業株式会社 硬化性エポキシ樹脂組成物
CA2049019A1 (en) * 1989-03-01 1990-09-02 Robert S. Dubrow Method of curing organopolysiloxane compositions and compositions and articles therefrom
EP0695116B1 (en) * 1994-07-29 2004-01-28 World Properties, Inc. Fluoropolymer composites containing two or more ceramic fillers to achieve independent control of dielectric constant and dimensional stability
DE19535603A1 (de) * 1995-09-25 1997-03-27 Basf Lacke & Farben 3-Komponenten-Beschichtungsmittel mit hoher Lösemittelbeständigkeit und hoher Abklebfestigkeit
US6440642B1 (en) * 1999-09-15 2002-08-27 Shipley Company, L.L.C. Dielectric composition
DE102004005247A1 (de) * 2004-01-28 2005-09-01 Infineon Technologies Ag Imprint-Lithographieverfahren
US7414100B2 (en) * 2004-06-21 2008-08-19 Exxonmobil Chemical Patents Inc. Polymerization process
US7754510B2 (en) * 2007-04-02 2010-07-13 Xerox Corporation Phase-separated dielectric structure fabrication process
CN101525511B (zh) * 2008-03-07 2011-06-22 财团法人工业技术研究院 可硬化交联型的墨水组合物及介电薄膜

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010135793A (ja) * 2008-12-05 2010-06-17 Xerox Corp 電子デバイス
JP2010245379A (ja) * 2009-04-08 2010-10-28 Hitachi Chem Co Ltd 絶縁体インク、絶縁被覆層の作製方法及び半導体装置

Also Published As

Publication number Publication date
US20120141757A1 (en) 2012-06-07
CN102487125A (zh) 2012-06-06
US8821962B2 (en) 2014-09-02
CN102487125B (zh) 2017-06-06

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