JP2012114441A - スピントランスファー発振器構造およびその形成方法 - Google Patents
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Abstract
【解決手段】
主磁極20とライトシールド26との間に形成されるSTO構造に、垂直磁気異方性(PMA)を有する2つのアシスト層27a,32を設ける。このSTO構造は、シード層21/スピン注入層(SIL)22/第1のスペーサ層23/第1のPMAアシスト層27a/複合FGL40/第2のスペーサ31/第2のPMAアシスト層32/キャップ層25なる構成を有する。複合FGL40は、下部FGL27bと、上部FGL29と、これらの間の中間結合層28とからなるシンセティック反強磁性構造を有する。SIL22および2つのPMAアシスト層27a,32は、それぞれ、(CoFe/Ni)x 等からなる積層体である。
【選択図】 図4
Description
米国特許出願公開第2009/0257151号
2009年6月24日出願の米国特許出願第12/456935号
2009年10月26日出願の米国特許出願第12/589614号
2010年5月28日出願の米国特許出願第12/802091号
2010年11月5日出願の米国特許出願第12/927083号
従来の積層体(図2B)は、主磁極20の上に、シード層21、FGL24、スペーサ層23、SIL22、およびキャップ層25をこの順に形成したものである。
本発明の第1の実施の形態に係るSTO構造の一例を作製した。その層構成は以下の通りである。
Ta1/Ru2/Cu2/(CoFe0.2/Ni0.6)n /Cu2/(CoFe0.2/Ni0.6)m /CoFe15/Ru0.8/FeCo3/Cu2/(CoFe0.2/Ni0.6)p /Ru1/Ta4/Ru3
本発明の第2の実施の形態に係るSTO構造の一例を作製した。その層構成は以下の通りである。
Ta1/Ru2/Cu2/(CoFe0.2/Ni0.6)p /Cu2/CoFe3/Ru0.8/FeCo15/(CoFe0.2/Ni0.6)m /Cu2/(CoFe/Ni)n /Ru1/Ta4/Ru3
本発明の第3の実施の形態に係るSTO構造の一例を作製した。その層構成は以下の通りである。
Ta1/Ru2/Cu2/(CoFe0.2/Ni0.6)n /Cu2/(CoFe0.2/Ni0.6)m /FeCo15/Cu2/(CoFe0.2/Ni0.6)q /Ru0.8/(CoFe/Ni)p /Ru1/Ta4/Ru3
本発明の第4の実施の形態に係るSTO構造の一例を作製した。その層構成は以下の通りである。
Ta1/Ru2/Cu2/(CoFe0.2/Ni0.6)p /Ru0.8/(CoFe0.2/Ni0.6)q /Cu2/CoFe15/(CoFe0.2/Ni0.6)m /Cu2/(CoFe0.2/Ni0.6)n /Ru1/Ta4/Ru3
Claims (29)
- (a)基体上に形成されたシード層と、
(b)垂直磁気異方性(PMA:perpendicular magnetic anisotropy )を有するスピン注入層(SIL:spin injection layer)と、
(c)第1の厚さを有する第1のFGL(磁界生成層,FGL:field generation layer)と、前記第1の厚さよりも小さい第2の厚さを有する第2のFGLとが、互いに逆向きの面内方向磁気モーメントを有するとともに、中間結合層によって分離されるように設けられたシンセティック反強磁性(SyAF:synthetic anti-ferromagnetic)構成の複合FGLと、
(d)第1のFGLに隣接するとともに、第1のスペーサ層によって前記SILから分離された第1のPMAアシスト層と、
(e)第2のスペーサ層によって前記第2のFGLから分離された第2のPMAアシスト層と
を備え、
前記シード層、前記SIL、前記複合FGL、前記第1および第2のPMAアシスト層、ならびに第1および第2のスペーサ層を含む上記の層はすべて前記基体上の積層体内に形成されている
スピントランスファー発振器(STO:spin transfer oscillator)構造。 - 前記シード層はTa/Ru/Cuなる構成(但し、前記Ta層の厚さは0.5nm以上5nm以下、前記Ru層の厚さは0.5nm以上10nm以下、前記Cu層の厚さは0.1nm以上10nm以下)を有する
請求項1に記載のスピントランスファー発振器構造。 - キャップ層をさらに備え、
前記シード層、前記SIL、前記第1のスペーサ層、前記第1のPMAアシスト層、前記複合FGL、前記第2のスペーサ層、前記第2のPMAアシスト層、および前記キャップ層は、この順に前記基体の上に形成されている
請求項1に記載のスピントランスファー発振器構造。 - キャップ層をさらに備え、
前記シード層、前記第2のPMAアシスト層、前記第2のスペーサ層、前記複合FGL、前記第1のPMAアシスト層、前記第1のスペーサ層、前記SIL、および前記キャップ層は、この順に前記基体の上に形成されている
請求項1に記載のスピントランスファー発振器構造。 - 前記第1および第2のスペーサ層は銅(Cu)からなる
請求項1に記載のスピントランスファー発振器構造。 - 前記第1のスペーサ層は金属酸化物からなり、前記第2のスペーサ層は銅(Cu)からなる
請求項1に記載のスピントランスファー発振器構造。 - 前記複合FGLはFeCo/Ru/FeCoなる構成(但し、前記第1のFGLとしてのFeCoの前記第1の厚さは10nm以上20nm以下、第2のFGLとしてのFeCoの前記第2の厚さは5nm未満)を有する
請求項1に記載のスピントランスファー発振器構造。 - 前記SILは、(Co/Ni)n ,(CoFe/Ni)n ,(Co/NiFe)n , (CoFe/NiCo)n ,(Co/NiCo)n ,(CoFe/NiFe)n ,(CoFe/Pt)n ,(CoFe/Pd)n ,(CoFe/Ir)n ,CoPt,FePt,CoPd,FePd,またはTbFe(Co)からなる(但し、nは括弧内積層体の繰り返し積層数であり、5以上50以下)
請求項1に記載のスピントランスファー発振器構造。 - 前記第1のPMAアシスト層は、(Co/Ni)m ,(CoFe/Ni)m ,(Co/NiFe)m ,(CoFe/NiCo)m ,(Co/NiCo)m ,または(CoFe/NiFe)m からなり(但し、mは括弧内積層体の繰り返し積層数であり、5以上30以下)、
前記第2のPMAアシスト層は、(Co/Ni)p ,(CoFe/Ni)p ,(Co/NiFe)p ,(CoFe/NiCo)p ,Co/NiCo)p ,または(CoFe/NiFe)p からなる(但し、pは括弧内積層体の繰り返し積層数であり、7以上10以下)
請求項1に記載のスピントランスファー発振器構造。 - 前記キャップ層の上面の上に形成されたライトシールドをさらに備え、
前記基体はマイクロ波アシスト磁気記録(MAMR:microwave assisted magnetic recording )デバイスにおける主磁極層である
請求項3に記載のスピントランスファー発振器構造。 - (a)基体の上に形成されたシード層と、
(b)垂直磁気異方性(PMA)を有するスピン注入層(SIL)と、
(c)上面および下面を有するとともに、面内方向の磁気モーメントを有する磁界生成層(FGL)と、
(d)前記FGLの前記上面および下面のうちの一方に隣接するとともに、第1のスペーサ層によって前記SILから分離された第1のPMAアシスト層と、
(e)第2のスペーサ層によって前記FGLの前記上面および下面のうちの他方から分離された第2のPMAアシスト層と
を備え、
前記第2のPMAアシスト層は、第1の厚さを有する第1のPMA層と、前記第1の厚さよりも小さい第2の厚さを有する第2のPMA層と、前記第1のPMA層と前記第2のPMA層との間に形成された中間結合層とによって構成されたシンセティック構造を有し、
前記シード層、前記SIL、前記FGL、前記第1および第2のPMAアシスト層、ならびに前記第1および第2のスペーサ層を含む上記の層はすべて前記基体上の積層体内に形成されている
スピントランスファー発振器(STO)構造。 - 前記シード層はTa/Ru/Cuなる構成(但し、前記Ta層の厚さは0.5nm以上5nm以下、前記Ru層の厚さは0.5nm以上10nm以下、前記Cu層の厚さは0.1nm以上10nm以下)を有する
請求項11に記載のスピントランスファー発振器構造。 - キャップ層をさらに備え、
前記シード層、前記SIL、前記第1のスペーサ層、前記第1のPMAアシスト層、前記FGL、前記第2のスペーサ層、前記第2のPMAアシスト層、および前記キャップ層は、この順に前記基体の上に形成されている
請求項11に記載のスピントランスファー発振器構造。 - キャップ層をさらに備え、
前記シード層、前記第2のPMAアシスト層、前記第2のスペーサ層、前記FGL、前記第1のPMAアシスト層、前記第1のスペーサ層、前記SIL、および前記キャップ層は、この順に前記基体の上に形成されている
請求項11に記載のスピントランスファー発振器構造。 - 前記第1および第2のスペーサ層は銅(Cu)からなる
請求項11に記載のスピントランスファー発振器構造。 - 前記第1のスペーサ層は金属酸化物からなり、前記第2のスペーサ層はCuからなる
請求項11に記載のスピントランスファー発振器構造。 - 前記FGLは、厚さが10nm以上20nm以下であるFeCo、またはFeCoの合金からなる
請求項11に記載のスピントランスファー発振器構造。 - 前記SILは、(Co/Ni)n ,(CoFe/Ni)n ,(Co/NiFe)n , (CoFe/NiCo)n ,(Co/NiCo)n ,(CoFe/NiFe)n ,(CoFe/Pt)n ,(CoFe/Pd)n ,(CoFe/Ir)n ,CoPt,FePt,CoPd,FePd,またはTbFe(Co)からなる(但し、nは括弧内積層体の繰り返し積層数であり、5以上50以下)
請求項11に記載のスピントランスファー発振器構造。 - 前記第1のPMAアシスト層は、(Co/Ni)m ,(CoFe/Ni)m ,(Co/NiFe)m ,(CoFe/NiCo)m ,(Co/NiCo)m ,または(CoFe/NiFe)m からなる積層体である(但し、mは括弧内積層体の繰り返し積層数であり、5以上30以下)
請求項11に記載のスピントランスファー発振器構造。 - 前記第1の厚さを有する前記第1のPMA層は、(Co/Ni)p ,(CoFe/Ni)p ,(Co/NiFe)p ,(CoFe/NiCo)p ,(Co/NiCo)p ,または(CoFe/NiFe)p からなる積層体(但し、pは括弧内積層体の繰り返し積層数であり、7以上10以下)であり、
前記第2の厚さを有する前記第2のPMA層は、(Co/Ni)q ,(CoFe/Ni)q ,(Co/NiFe)q ,(CoFe/NiCo)q ,(Co/NiCo)q ,または(CoFe/NiFe)q からなる積層体(但し、qは括弧内積層体の繰り返し積層数であり、3以上6以下)である
請求項11に記載のスピントランスファー発振器構造。 - 前記キャップ層の上面に形成されたライトシールドをさらに備え、
前記基体はマイクロ波アシスト磁気記録(MAMR)デバイスにおける主磁極層である
請求項13に記載のスピントランスファー発振器構造。 - (a)基体の上に、Ta/M1(M1層はfcc[111]またはhcp[001]結晶方位を有する金属)またはTa/M1/M2(M2はM1と異なる金属)なる構成を有する複合シード層を形成する工程と、
(b)前記複合シード層の上に、
(1)垂直磁気異方性(PMA)を有するスピン注入層(SIL)と、
(2)第1の厚さを有する第1のFGLと、前記第1の厚さよりも小さい第2の厚さを有する第2のFGLとが、互いに逆向きの面内方向磁気モーメントを有するとともに、中間結合層によって互いに分離されるように設けられたシンセティック反強磁性(SyAF)構成の複合磁界生成層(FGL)と、
(3)前記第1のFGLの表面に隣接するとともに、第1のスペーサ層によって前記SILから分離された第1のPMAアシスト層と、
(4)第2のスペーサ層によって前記第2のFGLから分離された第2のPMAアシスト層と、
(5)キャップ層と
を含む積層体を形成する工程と、
(c)前記シード層、前記キャップ層、および前記積層体をアニーリングする工程と
を含むスピントランスファー発振器構造の形成方法。 - 前記アニーリングを、0.5時間以上5時間以下の時間にわたって、150°C以上300°C以下の温度で行う
請求項22記載の形成方法。 - 前記基体は主磁極であり、
前記SIL、前記第1のスペーサ層、前記第1のPMAアシスト層、前記複合FGL、前記第2のスペーサ層、前記第2のPMAアシスト層、および前記キャップ層を、この順に前記シード層の上に形成し、その後、前記キャップ層の上にライトシールドを形成する
請求項22記載の形成方法。 - 前記基体は主磁極であり、
前記第2のPMAアシスト層、前記第2のスペーサ層、前記複合FGL、前記第1のPMAアシスト層、前記第1のスペーサ層、前記SIL、および前記キャップ層を、この順に前記シード層の上に形成し、その後、前記キャップ層の上にライトシールドを形成する
請求項22記載の形成方法。 - (a)基体の上に、Ta/M1(M1層はfcc[111]またはhcp[001]結晶方位を有する金属)またはTa/M1/M2(M2はM1と異なる金属)なる構成を有する複合シード層を形成する工程と、
(b)前記複合シード層の上に、
(1)垂直磁気異方性(PMA)を有するスピン注入層(SIL)と、
(2)面内方向の磁気モーメントを有するとともに、上面および下面を有する磁界生成層(FGL)と、
(3)前記FGLの前記上面および下面のうちの一方に隣接するとともに、第1のスペーサ層によって前記SILから分離された第1のPMAアシスト層と、
(4)第1の厚さを有する第1のPMA層と、前記第1の厚さよりも小さい第2の厚さを有する第2のPMA層と、前記第1のPMA層と前記第2のPMA層との間に形成された中間結合層とによって構成されたシンセティック構造を有し、第2のスペーサ層によって前記FGLの前記上面および下面のうちの他方から分離された第2のPMAアシスト層と、
(5)キャップ層と
を含む積層体を形成する工程と、
(c)前記シード層、前記キャップ層、および前記積層体をアニーリングする工程と
を含むスピントランスファー発振器構造の形成方法。 - 前記アニーリングを、0.5時間以上5時間以下の時間にわたって、150°C以上300°C以下の温度で行う
請求項26記載のスピントランスファー発振器構造の形成方法。 - 前記基体は主磁極であり、
前記SIL、前記第1のスペーサ層、前記第1のPMAアシスト層、前記FGL、前記第2のスペーサ層、前記第2のPMAアシスト層、および前記キャップ層を、この順に前記シード層の上に形成し、その後、前記キャップ層の上にライトシールドを形成する
請求項26記載のスピントランスファー発振器構造の形成方法。 - 前記基体は主磁極であり、
前記第2のPMAアシスト層、前記第2のスペーサ層、前記FGL、前記第1のPMAアシスト層、前記第1のスペーサ層、前記SIL、および前記キャップ層を、この順に前記シード層の上に形成し、その後、前記キャップ層の上にライトシールドを形成する
請求項26記載のスピントランスファー発振器構造の形成方法。
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US20120126905A1 (en) | 2012-05-24 |
US8274811B2 (en) | 2012-09-25 |
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