SG10201408211XA - Magnetoresistive device - Google Patents

Magnetoresistive device

Info

Publication number
SG10201408211XA
SG10201408211XA SG10201408211XA SG10201408211XA SG10201408211XA SG 10201408211X A SG10201408211X A SG 10201408211XA SG 10201408211X A SG10201408211X A SG 10201408211XA SG 10201408211X A SG10201408211X A SG 10201408211XA SG 10201408211X A SG10201408211X A SG 10201408211XA
Authority
SG
Singapore
Prior art keywords
layer structure
magnetic layer
fixed magnetic
fixed
magnetoresistive device
Prior art date
Application number
SG10201408211XA
Inventor
Rachid Sbiaa
Yan Hwee Sunny Lua
Yuanhong Luo
Original Assignee
Agency Science Tech & Res
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency Science Tech & Res filed Critical Agency Science Tech & Res
Publication of SG10201408211XA publication Critical patent/SG10201408211XA/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)

Abstract

MAGNETORESISTIVE DEVICE According to embodiments of the present invention, a magnetoresistive device having a 5 magnetic junction is provided. The magnetic junction of the magnetoresistive device includes first fixed magnetic a layer structure having fixed a magnetization orientation, a second fixed magnetic layer structure having a fixed magnetization orientation, and a free magnetic layer structure having a variable magnetization orientation, wherein the first fixed magnetic layer structure, the second fixed magnetic layer structure and the free 10 magnetic layer structure are arranged one over the other, wherein the first fixed magnetic layer structure, the second fixed magnetic layer structure and the free magnetic layer structure have respective magnetization orientations configured to orient in a direction at least substantially perpendicular to a plane defined by an interface between the first fixed magnetic layer structure and the second fixed magnetic layer structure, wherein the 15 respective magnetization orientations of the first fixed magnetic layer structure and the second fixed magnetic layer structure are oriented in opposite directions, and wherein the magnetization orientation of the first fixed magnetic layer structure is configured to oscillate in a first direction in response to a current or a voltage applied across the magnetic junction so as to change the magnetization orientation of the free magnetic layer 20 structure. Figure 2A 35
SG10201408211XA 2011-05-20 2012-05-16 Magnetoresistive device SG10201408211XA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201161488183P 2011-05-20 2011-05-20

Publications (1)

Publication Number Publication Date
SG10201408211XA true SG10201408211XA (en) 2015-01-29

Family

ID=47174326

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201408211XA SG10201408211XA (en) 2011-05-20 2012-05-16 Magnetoresistive device
SG2012035911A SG185900A1 (en) 2011-05-20 2012-05-16 Magnetoresistive device

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG2012035911A SG185900A1 (en) 2011-05-20 2012-05-16 Magnetoresistive device

Country Status (2)

Country Link
US (1) US9343128B2 (en)
SG (2) SG10201408211XA (en)

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SG185922A1 (en) * 2011-06-02 2012-12-28 Agency Science Tech & Res Magnetoresistive device
US9123884B2 (en) 2011-09-22 2015-09-01 Agency For Science, Technology And Research Magnetoresistive device and a writing method for a magnetoresistive device
US8816456B2 (en) * 2011-12-21 2014-08-26 Agency For Science, Technology And Research Magnetoresistive device and a method of forming the same
US9230571B1 (en) 2014-08-26 2016-01-05 Headway Technologies, Inc. MgO based perpendicular spin polarizer in microwave assisted magnetic recording (MAMR) applications
US9852782B2 (en) * 2015-08-31 2017-12-26 Western Digital Technologies, Inc. Tilted synthetic antiferromagnet polarizer/reference layer for STT-MRAM bits
US11437567B2 (en) * 2016-12-28 2022-09-06 Intel Corporation Perpendicular spin transfer torque magnetic mechanism
US9935261B1 (en) 2017-04-05 2018-04-03 Headway Technologies, Inc. Dielectric encapsulation layer for magnetic tunnel junction (MTJ) devices using radio frequency (RF) sputtering
US10038138B1 (en) 2017-10-10 2018-07-31 Headway Technologies, Inc. High temperature volatilization of sidewall materials from patterned magnetic tunnel junctions
US10325639B2 (en) 2017-11-20 2019-06-18 Taiwan Semiconductor Manufacturing Company, Ltd. Initialization process for magnetic random access memory (MRAM) production
US10522745B2 (en) 2017-12-14 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions
US10522746B1 (en) 2018-08-07 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Dual magnetic tunnel junction devices for magnetic random access memory (MRAM)
US10797225B2 (en) 2018-09-18 2020-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Dual magnetic tunnel junction (DMTJ) stack design
US10424326B1 (en) 2018-11-21 2019-09-24 Headway Technologies, Inc. Magnetic flux guiding device with antiferromagnetically coupled (AFC) spin polarizer in assisted writing application
US10522174B1 (en) 2018-11-21 2019-12-31 Headway Technologies, Inc. Magnetic flux guiding device with antiferromagnetically coupled (AFC) spin polarizer in assisted writing application
US10490216B1 (en) 2018-12-04 2019-11-26 Headway Technologies, Inc. Magnetic flux guiding device with antiferromagnetically coupled (AFC) oscillator in assisted writing application
US10559318B1 (en) 2019-03-29 2020-02-11 Headway Technologies, Inc. Magnetic recording assisted by a single spin hall effect (SHE) layer in the write gap
US10580441B1 (en) 2019-03-29 2020-03-03 Headway Technologies, Inc. Magnetic recording assisted by two spin hall effect (SHE) layers in the write gap
US10811034B1 (en) 2019-04-01 2020-10-20 Headway Technologies, Inc. Heat sink structure for microwave-assisted magnetic recording (MAMR) head
US10714129B1 (en) 2019-04-02 2020-07-14 Headway Technologies, Inc. Writer with recessed spin flipping element in the main pole surrounding gap
US10714132B1 (en) 2019-06-25 2020-07-14 Headway Technologies, Inc. Magnetic flux guiding devices all around main pole design without leading shield and side shields in assisted writing applications
US10714127B1 (en) 2019-06-25 2020-07-14 Headway Technologies, Inc. Shape designs of magnetic flux guiding devices all around the main pole in assisted writing applications
CN112186099B (en) * 2019-07-02 2022-09-20 中电海康集团有限公司 Magnetic tunnel junction
US11355141B2 (en) 2019-07-10 2022-06-07 Headway Technologies, Inc. Writer with narrower high moment trailing shield
US11043234B2 (en) 2019-08-21 2021-06-22 Headway Technologies, Inc. Spin transfer torque oscillator (STO) with spin torque injection to a flux generating layer (FGL) from two sides
US11205447B2 (en) 2019-08-21 2021-12-21 Headway Technologies, Inc. Reader noise reduction using spin hall effects
US11189304B2 (en) 2019-09-06 2021-11-30 Headway Technologies, Inc. Spin injection assisted magnetic recording
US10714136B1 (en) 2019-09-06 2020-07-14 Headway Technologies, Inc. Alternative designs for magnetic recording assisted by two spin hall effect (SHE) layers in the write gap
US10770104B1 (en) 2019-09-06 2020-09-08 Headway Technologies, Inc. Alternative designs for magnetic recording assisted by a single spin hall effect (SHE) layer in the write gap
US10748562B1 (en) 2019-11-12 2020-08-18 Headway Technologies, Inc. Third alternative design for magnetic recording assisted by one or two spin hall effect (SHE) layers in the write gap
US11011193B1 (en) 2020-02-04 2021-05-18 Headway Technologies, Inc. Dual flux change layer (FCL) assisted magnetic recording
US11043232B1 (en) 2020-02-04 2021-06-22 Headway Technologies, Inc. Spin torque reversal assisted magnetic recording (STRAMR) device having a width substantially equal to that of a traililng shield
US10937450B1 (en) 2020-07-13 2021-03-02 Headway Technologies, Inc. Magnetic flux guiding device with spin torque oscillator (STO) film having one or more negative spin polarization layers in assisted writing application
US11295768B1 (en) 2020-09-23 2022-04-05 Headway Technologies, Inc. Writer with laterally graded spin layer MsT
US11348605B1 (en) 2020-11-20 2022-05-31 Headway Technologies, Inc. Writer with adaptive side gap

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US6980469B2 (en) * 2003-08-19 2005-12-27 New York University High speed low power magnetic devices based on current induced spin-momentum transfer
US7602591B2 (en) * 2005-06-22 2009-10-13 Tdk Corporation Exchange-coupled free layer with out-of-plane magnetization
US7616412B2 (en) * 2006-07-21 2009-11-10 Carnegie Melon University Perpendicular spin-torque-driven magnetic oscillator
JP5455313B2 (en) * 2008-02-21 2014-03-26 株式会社東芝 Magnetic storage element and magnetic storage device
JP4724196B2 (en) * 2008-03-25 2011-07-13 株式会社東芝 Magnetoresistive element and magnetic random access memory
US8054677B2 (en) * 2008-08-07 2011-11-08 Seagate Technology Llc Magnetic memory with strain-assisted exchange coupling switch
US8274811B2 (en) * 2010-11-22 2012-09-25 Headway Technologies, Inc. Assisting FGL oscillations with perpendicular anisotropy for MAMR
JP5214765B2 (en) * 2011-03-25 2013-06-19 株式会社東芝 Magnetoresistive element and magnetic memory

Also Published As

Publication number Publication date
US9343128B2 (en) 2016-05-17
SG185900A1 (en) 2012-12-28
US20120292723A1 (en) 2012-11-22

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