JP2012114420A - 結晶性半導体膜の作製方法及び半導体装置の作製方法 - Google Patents
結晶性半導体膜の作製方法及び半導体装置の作製方法 Download PDFInfo
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Abstract
【解決手段】ガス管から導入された成膜ガスを拡散する第2のガス拡散室と、前記第2のガス拡散室と分散板を隔てて設けられ、該分散板のガス孔から成膜ガスが導入される第1のガス拡散室と、を介して、前記第1のガス拡散室とシャワー板を隔てて設けられた処理室内に該シャワー板のガス孔から成膜ガスを供給し、前記成膜ガスを導入することによって前記処理室内の圧力を2000Pa以上100000Pa以下とし、前記処理室内に電界を生じさせる一対の電極のうち、一方の電極面から電界強度が均一な高周波電力を供給することでグロー放電プラズマを生成させ、前記対向する電極の他方に配された基板上に結晶核を生じさせ、その後、該結晶核を成長させて結晶性半導体膜を作製する。
【選択図】図1
Description
なお、序数は便宜上付したものであり、第1のガス拡散室を第2のガス拡散室と呼んでもよいし、第2のガス拡散室を第1のガス拡散室と呼んでもよい。
本実施の形態では、本発明の一態様である結晶性半導体膜の作製方法について説明する。
本実施の形態では、本発明の一態様である半導体装置の作製方法について説明する。具体的には、実施の形態1にて説明した結晶性半導体膜の作製方法を適用した薄膜トランジスタの作製方法について、図5及び図6を参照して説明する。なお、薄膜トランジスタとしては、画素トランジスタを例示する。
実施の形態2で説明した薄膜トランジスタには、チャネル形成領域と重畳して第3の導電層226が設けられており、これがバックゲート電極として機能する。本実施の形態では、薄膜トランジスタへのバックゲート電極の配し方について説明する。
上記実施の形態にて作製した薄膜トランジスタを適用した半導体装置としては、電子ペーパーが挙げられる。電子ペーパーは、情報を表示するものであればあらゆる分野の電子機器に用いることが可能である。例えば、電子ペーパーを用いて、電子書籍(電子ブック)、ポスター、デジタルサイネージ、PID(Public Information Display)、電車などの乗り物の車内広告、クレジットカード等の各種カードにおける表示等に適用することができる。電子機器の一例を図8に示す。
上記実施の形態にて作製した薄膜トランジスタを適用した半導体装置としては、電子ペーパー以外にもさまざまな電子機器(遊技機も含む)が挙げられる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。
102 処理室
104 ライン室
106 第1のガス拡散室
108 第2のガス拡散室
110 上部電極
112 下部電極
114 チャンバー壁
116 分散板
118 シャワー板
120 第1のガス管
122 第2のガス管
124 処理用ガス供給源
126 不活性ガス供給源に接続されたガス導入口
127 絶縁物
128 温度計
130 分散板中央部
132 分散板周辺部
140 冷却媒体経路
142 迂回部
144 第1のガス管120のガス導入口
146 温度計128の接続箇所
200 基板
202 第1の導電層
204 第1の絶縁層
206 第1の半導体膜
208 第2の半導体膜
210 不純物半導体膜
211 エッチングマスク
212 薄膜積層体
214 導電膜
215 エッチングマスク
216 第1の半導体層
218 第2の半導体層
220 不純物半導体層
222 第2の導電層
224 第2の絶縁層
225 開口部
226 第3の導電層
300A ゲート
300B ゲート
300C ゲート
300D ゲート
302A 配線
302B 配線
302C 配線
302D 配線
304A 電極
304B 電極
304C 電極
304D 電極
306A 画素電極
306B 画素電極
306C 画素電極
306D 画素電極
308A バックゲート
308B バックゲート
308C バックゲート
308D バックゲート
310A 開口部
310B 開口部
310C 開口部
310D 開口部
312 開口部
400 電子書籍
401 筐体
403 筐体
405 表示部
406 光電変換装置
407 表示部
408 光電変換装置
411 軸部
421 電源
423 操作キー
425 スピーカ
500 テレビジョン装置
501 筐体
503 表示部
505 スタンド
507 表示部
509 操作キー
510 リモコン操作機
520 デジタルフォトフレーム
521 筐体
523 表示部
541 上部筐体
542 下部筐体
543 表示部
544 キーボード
545 外部接続ポート
546 ポインティングデバイス
547 表示部
d1 第1のガス管120の主要部の断面の直径
d2 第2のガス管122の主要部の断面の直径
d3 第1のガス管120のガス導入口の直径
d4 分散板中央部の直径
Claims (3)
- ガス管から導入された成膜ガスを拡散する第1のガス拡散室と、
前記第1のガス拡散室と分散板を隔てて設けられ、該分散板のガス孔から前記成膜ガスが導入される第2のガス拡散室と、を介して、
前記第2のガス拡散室とシャワー板を隔てて設けられた処理室内に該シャワー板のガス孔から前記成膜ガスを供給し、
前記成膜ガスを導入することによって前記処理室内の圧力を2000Pa以上100000Pa以下とし、
前記処理室内に電界を生じさせる一対の対向する電極のうち、一方の電極面から電界強度が均一な高周波電力を供給することでグロー放電プラズマを生成させ、
前記対向する電極の他方に配された基板上に結晶核を生じさせ、その後、該結晶核を成長させることを特徴とする結晶性半導体膜の作製方法。 - 請求項1において、
前記結晶核を成長させる時の前記処理室内の圧力が4000Pa以上50000Pa以下であることを特徴とする結晶性半導体膜の作製方法。 - ゲート電極を形成し、
前記ゲート電極を覆ってゲート絶縁層を形成し、
前記ゲート絶縁層上に請求項1または請求項2に記載の結晶性半導体膜の作製方法により結晶性半導体膜を形成し、
前記結晶性半導体膜上にソース電極及びドレイン電極を形成することを特徴とする半導体装置の作製方法。
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