JP2012096980A - Apparatus for firing ceramic substrate and method for firing ceramic substrate using the same - Google Patents

Apparatus for firing ceramic substrate and method for firing ceramic substrate using the same Download PDF

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JP2012096980A
JP2012096980A JP2011050192A JP2011050192A JP2012096980A JP 2012096980 A JP2012096980 A JP 2012096980A JP 2011050192 A JP2011050192 A JP 2011050192A JP 2011050192 A JP2011050192 A JP 2011050192A JP 2012096980 A JP2012096980 A JP 2012096980A
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firing
ceramic substrate
ceramic
pressure plate
setter
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Beom-Joon Cho
チェ・ボム・ジュン
Yun Hwi Park
パク・ユン・ウィ
Soo-Hyun Lyoo
リュ・ス・ヒュン
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Samsung Electro Mechanics Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64Burning or sintering processes
    • C04B35/645Pressure sintering
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605Treating the starting powders individually or as mixtures
    • C04B35/62645Thermal treatment of powders or mixtures thereof other than sintering
    • C04B35/62675Thermal treatment of powders or mixtures thereof other than sintering characterised by the treatment temperature
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27BFURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B1/00Shaft or like vertical or substantially vertical furnaces
    • F27B1/005Shaft or like vertical or substantially vertical furnaces wherein no smelting of the charge occurs, e.g. calcining or sintering furnaces

Abstract

PROBLEM TO BE SOLVED: To provide an apparatus for firing a ceramic substrate, and to provide a method for firing a ceramic substrate using the same.SOLUTION: The apparatus for firing a ceramic substrate includes: a firing setter for mounting a ceramic substrate thereon; a firing pressing plate located at an upper part of the ceramic substrate; and ceramic supporting columns which are arranged between the firing setter and the firing pressing plate so that a certain interval may be formed between the firing pressing plate and the ceramic substrate and each has a thickness shrinkage during firing larger than that of the ceramic substrate. When a large ceramic substrate is fired under pressure, the ceramic substrate is fired without causing warp by using the ceramic columns each having a shrinkage higher than that of the ceramic substrate and the firing pressing plate.

Description

本発明は、セラミック基板焼成装置及びこれを利用したセラミック基板焼成方法に関し、より詳細には、反りを生じさせることなく、大型セラミック基板を焼成することができるセラミック基板焼成装置及びこれを利用したセラミック基板焼成方法に関する。   The present invention relates to a ceramic substrate firing apparatus and a ceramic substrate firing method using the same, and more specifically, a ceramic substrate firing apparatus capable of firing a large ceramic substrate without causing warpage, and a ceramic using the same. The present invention relates to a substrate baking method.

最近、電子部品領域における小型化の傾向が次第に強化、持続するにつれて電子部品の精密化、微細パターン化及び薄膜化を通じた小型モジュール及び基板が開発されている。   Recently, as the trend toward miniaturization in the electronic component area has gradually strengthened and persisted, small modules and substrates have been developed through the refinement, fine patterning and thinning of electronic components.

しかし、通常用いられている印刷回路基板(Printed circuit board、PCB)を小型化された電子部品に利用する場合、サイズの小型化、高周波領域での信号損失及び高温高湿時の信頼性低下のような欠点が発生した。   However, when a commonly used printed circuit board (PCB) is used for a miniaturized electronic component, the size is reduced, the signal loss in a high frequency region, and the reliability is reduced at high temperature and high humidity. Such drawbacks occurred.

このような欠点を克服するために、PCB基板ではなく、セラミック及びガラスを利用した基板が用いられている。   In order to overcome such drawbacks, a substrate using ceramic and glass is used instead of a PCB substrate.

セラミック−ガラスを利用した多層セラミック基板は、3次元構造の回路具現及びキャビティ(cavity)の形成が可能であるため、高い設計柔軟性を有し、多様な機能の素子を内蔵することができる。   Since a multilayer ceramic substrate using ceramic-glass can realize a circuit having a three-dimensional structure and form a cavity, it has high design flexibility and can incorporate elements having various functions.

また、犠牲拘束層などを用いて平面方向の無収縮焼成が可能であるという長所を有し、寸法精度が向上された大面積基板などへ応用が拡大され、品質及び生産効率を高めようとする研究が続けられている。   In addition, it has the advantage that non-shrinkable firing in the planar direction is possible using a sacrificial constraining layer, etc., and its application is expanded to large area substrates etc. with improved dimensional accuracy to improve quality and production efficiency. Research continues.

しかし、大面積基板は焼成時に基板の不均一収縮によって基板が変形しやすく、基板の変形は収率の低下に繋がるため、反りを生じさせることなく大面積の基板を焼成することができる方法が求められている。   However, since a large area substrate is easily deformed due to non-uniform shrinkage of the substrate during firing, and the deformation of the substrate leads to a decrease in yield, there is a method that can fire a large area substrate without causing warpage. It has been demanded.

本発明は、反りを生じさせることなく、大型セラミック基板を焼成することができるセラミック基板焼成装置及びこれを利用したセラミック基板焼成方法を提供する。   The present invention provides a ceramic substrate firing apparatus capable of firing a large ceramic substrate without causing warpage, and a ceramic substrate firing method using the same.

本発明の一実施形態によると、セラミック基板を装着するための焼成セッターと、上記セラミック基板の上部に位置する焼成加圧板と、上記焼成加圧板と上記セラミック基板との間に一定間隔を置くように上記焼成セッターと上記焼成加圧板との間に配置され、上記セラミック基板より焼成時の厚さ収縮率が大きいセラミック支柱と、を含むセラミック基板焼成装置が提供される。   According to an embodiment of the present invention, a firing setter for mounting a ceramic substrate, a firing pressure plate positioned on the ceramic substrate, and a fixed interval between the firing pressure plate and the ceramic substrate. A ceramic substrate firing apparatus including a ceramic support disposed between the firing setter and the firing pressure plate and having a thickness shrinkage ratio larger than that of the ceramic substrate upon firing.

上記セラミック支柱は、か焼工程段階では上記セラミック基板の厚さより高い高さを有し、焼成工程段階では上記セラミック基板の厚さより低い高さを有することを特徴とする。   The ceramic support has a height higher than a thickness of the ceramic substrate in a calcination process, and has a height lower than a thickness of the ceramic substrate in a firing process.

また、上記セラミック基板は、か焼工程段階では上記焼成加圧板と互いに離隔され、焼成工程段階では上記焼成加圧板と接することを特徴とする。   The ceramic substrate may be spaced apart from the firing pressure plate in the calcination process step, and may be in contact with the firing pressure plate in the firing process step.

上記か焼工程段階は500℃未満の温度範囲で行われることができる。   The calcination step may be performed at a temperature range below 500 ° C.

上記焼成工程段階は500℃以上の温度範囲で行われることができる。   The firing process step may be performed at a temperature range of 500 ° C. or higher.

上記セラミック支柱は上記セラミック基板と同一の材質であることができる。   The ceramic support may be made of the same material as the ceramic substrate.

また、セラミック支柱は上記セラミック基板より融点が低い材質であることができる。   The ceramic support may be made of a material having a lower melting point than the ceramic substrate.

上記焼成加圧板は上記焼成セッターと同一の材質であることができる。   The firing pressure plate may be made of the same material as the firing setter.

また、上記焼成加圧板は上記焼成セッターより密度が高い材質であることができる。   The firing pressure plate may be made of a material having a higher density than the firing setter.

上記セラミック支柱は、上記焼成セッターの各辺に沿って夫々位置することができ、各角部に夫々位置することができ、上記焼成セッターの対向する辺に夫々位置し、二つ以上のセラミック基板の間に夫々一つがさらに位置することができる。   The ceramic struts can be positioned along each side of the fired setter, can be located at each corner, respectively, are located on opposite sides of the fired setter, and two or more ceramic substrates Each can be further located between.

一方、本発明の他の実施形態によると、焼成セッターと、セラミック基板と、焼成加圧板とを設ける段階と、上記セラミック基板より焼成時の厚さ収縮率が大きいセラミック支柱を設ける段階と、上記焼成セッターの上部に上記セラミック基板を位置させる段階と、上記焼成加圧板と上記セラミック基板との間に一定間隔を置くように、上記焼成セッター上に上記セラミック支柱と上記焼成加圧板とを配置する段階と、を含むセラミック基板焼成方法が提供される。   Meanwhile, according to another embodiment of the present invention, a step of providing a firing setter, a ceramic substrate, and a firing pressure plate, a step of providing a ceramic column having a larger thickness shrinkage ratio during firing than the ceramic substrate, The ceramic support and the firing pressure plate are disposed on the firing setter so that the ceramic substrate is positioned on the firing setter, and a constant interval is provided between the firing pressure plate and the ceramic substrate. A method of firing a ceramic substrate comprising the steps of:

本発明によると、セラミック基板より収縮率が大きいセラミック支柱と焼成加圧板を用いて大型セラミック基板を加圧焼成することにより、反りを生じさせることなく焼成することができる。   According to the present invention, the large ceramic substrate can be fired without causing warp by firing the large ceramic substrate using the ceramic support and the firing pressure plate having a larger shrinkage than the ceramic substrate.

特に、本発明によると、焼成前にはセラミック支柱がセラミック基板より厚いため、か焼時に脱バインダ通路を確保し、焼成時にはセラミック支柱の収縮率がセラミック基板より大きいため、焼成加圧板がセラミック基板を加圧することにより、反りを生じることなくセラミック基板が焼成される。   In particular, according to the present invention, since the ceramic support is thicker than the ceramic substrate before firing, a debinder passage is ensured during calcination, and the shrinkage rate of the ceramic support is larger than the ceramic substrate during firing, so the firing pressure plate is a ceramic substrate. By pressing the ceramic substrate, the ceramic substrate is fired without causing warpage.

本発明の一実施形態によるセラミック基板焼成用装置を概略的に示す斜視図である。1 is a perspective view schematically showing an apparatus for firing a ceramic substrate according to an embodiment of the present invention. 本発明の他の実施形態によるセラミック基板焼成工程のうち、か焼工程を示す断面図である。It is sectional drawing which shows a calcination process among the ceramic substrate baking processes by other embodiment of this invention. 本発明の他の実施形態によるセラミック基板焼成工程のうち、焼成工程を示す断面図である。It is sectional drawing which shows a baking process among the ceramic substrate baking processes by other embodiment of this invention. 本発明の他の実施形態によるセラミック基板焼成工程のフローチャートである。6 is a flowchart of a ceramic substrate firing process according to another embodiment of the present invention. セラミック基板とセラミック支柱の温度毎の厚さ収縮率を示すグラフである。It is a graph which shows the thickness shrinkage | contraction rate for every temperature of a ceramic substrate and a ceramic support | pillar. 本発明の一実施形態によるセラミック基板焼成用装置の配置図である。1 is a layout view of an apparatus for firing a ceramic substrate according to an embodiment of the present invention. 本発明の一実施形態によるセラミック基板焼成用装置の配置図である。1 is a layout view of an apparatus for firing a ceramic substrate according to an embodiment of the present invention. 本発明の一実施形態によるセラミック基板焼成用装置の配置図である。1 is a layout view of an apparatus for firing a ceramic substrate according to an embodiment of the present invention.

本発明の実施形態は様々な他の形態に変形することができ、本発明の範囲は以下に説明する実施形態に限定されるものではない。また、本発明の実施形態は当業界で平均的な知識を有する者に本発明をより完全に説明するために提供されるものである。従って、図面における要素の形状及び大きさ等はより明確な説明のために誇張されることがあり、図面上において同一の符号で表される要素は同一の要素である。   Embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Also, the embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art. Accordingly, the shape and size of elements in the drawings may be exaggerated for a clearer description, and elements denoted by the same reference numerals in the drawings are the same elements.

以下、添付された図面を参照して本発明の好ましい実施形態を説明する。   Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

図1は本発明の一実施形態によるセラミック基板焼成用装置を概略的に示す斜視図である。   FIG. 1 is a perspective view schematically showing an apparatus for firing a ceramic substrate according to an embodiment of the present invention.

本発明の一実施形態によると、セラミック基板2を装着するための焼成セッター1と、上記セラミック基板2の上部に位置する焼成加圧板3と、上記焼成加圧板3と上記セラミック基板2との間に一定間隔を置くように上記焼成セッター1と上記焼成加圧板3との間に配置され、上記セラミック基板2より焼成時の厚さ収縮率が大きいセラミック支柱4と、を含むセラミック基板焼成用装置10が提供される。   According to one embodiment of the present invention, a firing setter 1 for mounting the ceramic substrate 2, a firing pressure plate 3 positioned above the ceramic substrate 2, and between the firing pressure plate 3 and the ceramic substrate 2. A ceramic substrate firing apparatus including a ceramic support column 4 disposed between the firing setter 1 and the firing pressure plate 3 so as to be spaced apart from each other and having a thickness shrinkage ratio larger than that of the ceramic substrate 2 during firing. 10 is provided.

従来のセラミック−ガラスを利用した大面積多層セラミック基板は、焼成時に基板の不均一収縮によって基板が変形しやすいという問題点があった。   A conventional large-area multilayer ceramic substrate using ceramic-glass has a problem that the substrate is likely to be deformed due to non-uniform shrinkage of the substrate during firing.

これを改善するために、従来は、多層セラミック基板を表裏面を貫通する貫通孔が多数個形成されている多孔質セラミック焼成体の間に挟んで焼成する方法が用いられていた。   In order to improve this, conventionally, a method of firing by sandwiching a multilayer ceramic substrate between porous ceramic fired bodies formed with a large number of through-holes penetrating the front and back surfaces has been used.

しかし、上記の方法で多層セラミック基板を焼成する場合、貫通孔の形成にも関わらずセラミック基板の表面を覆っている領域が15〜70%程度存在するため、脱バインダを妨害するようになり、これはセラミック基板の厚さが増加するほどさらに悪化する。   However, when the multilayer ceramic substrate is fired by the above method, since there is about 15 to 70% of the region covering the surface of the ceramic substrate in spite of the formation of the through-hole, the binder removal is disturbed. This becomes worse as the thickness of the ceramic substrate increases.

本発明の一実施形態によるセラミック基板焼成用装置10は、上記の問題点を解決するために、焼成セッター1、焼成加圧板3及びセラミック基板2より収縮率が大きいセラミック支柱4を含む。   An apparatus 10 for firing a ceramic substrate according to an embodiment of the present invention includes a firing setter 1, a firing pressure plate 3, and a ceramic column 4 having a contraction rate larger than that of the ceramic substrate 2 in order to solve the above problems.

セラミック基板2とセラミック支柱4は同一の材質であってもよく、収縮率をより大きくするために、セラミック支柱4が上記セラミック基板2より融点が低い材質であってもよい。   The ceramic substrate 2 and the ceramic support 4 may be made of the same material, and the ceramic support 4 may be made of a material having a lower melting point than the ceramic substrate 2 in order to increase the shrinkage rate.

また、本発明の一実施形態によると、セラミック支柱4は未焼結焼成支柱であり、焼成前のか焼工程でセラミック基板2から脱バインダ通路を確保するために、セラミック基板2より厚さが厚く(Z軸方向高さがより高く)製作される。   Further, according to an embodiment of the present invention, the ceramic support 4 is an unsintered fired support, and is thicker than the ceramic substrate 2 in order to secure a debinding path from the ceramic substrate 2 in the calcination step before firing. (Z-axis height is higher).

図4はセラミック基板とセラミック支柱の温度毎の厚さ収縮率を示すグラフである。   FIG. 4 is a graph showing the thickness shrinkage rate for each temperature of the ceramic substrate and the ceramic support.

図4を参照すると、セラミック基板2とセラミック支柱4は両方ともか焼完了区間である500℃以前には収縮挙動を示さない。   Referring to FIG. 4, both the ceramic substrate 2 and the ceramic support column 4 do not exhibit shrinkage behavior before 500 ° C., which is a calcining completion section.

従って、未焼結状態のセラミック支柱4がセラミック基板2より厚さが厚い状態で焼成加圧板3を支持しているため、セラミック基板2と焼成加圧板3が接触せず、脱バインダ通路が確保された状態でか焼工程が進行される。   Therefore, since the unsintered ceramic support column 4 supports the fired pressure plate 3 in a state where the thickness is thicker than the ceramic substrate 2, the ceramic substrate 2 and the fired pressure plate 3 do not come into contact with each other, and a debinding path is secured. The calcination process is performed in the finished state.

上記か焼工程が完了した後、700℃付近で焼結収縮挙動が始まる。   After the calcination step is completed, the sintering shrinkage behavior starts around 700 ° C.

本発明の一実施形態によるセラミック基板焼成用装置10では、セラミック支柱4のZ軸収縮率がセラミック基板2のZ軸収縮率より大きいため、焼結収縮時のセラミック支柱4の厚さ減少量はセラミック基板2の厚さ減少量より遥かに大きい。   In the apparatus for firing a ceramic substrate 10 according to an embodiment of the present invention, since the Z-axis shrinkage rate of the ceramic support 4 is larger than the Z-axis shrinkage rate of the ceramic substrate 2, the thickness reduction amount of the ceramic support 4 during sintering shrinkage is This is much larger than the thickness reduction amount of the ceramic substrate 2.

従って、焼成前にはセラミック基板2より特定サイズだけ厚かったセラミック支柱4が焼成後にはセラミック基板2の厚さと同一であるかまたはより薄くなる。   Therefore, the ceramic support 4 that is thicker than the ceramic substrate 2 by a specific size before firing becomes equal to or thinner than the thickness of the ceramic substrate 2 after firing.

これにより、焼成前にはセラミック基板2と接触しなかった焼成加圧板3が焼成過程でセラミック基板2と接触し、加圧した状態で焼成が進行される。   Thereby, the firing pressure plate 3 that did not come into contact with the ceramic substrate 2 before firing comes into contact with the ceramic substrate 2 in the firing process, and firing proceeds in a pressurized state.

即ち、500℃未満の温度範囲では上記セラミック支柱4の厚さが上記セラミック基板2の厚さより大きいが、500℃以上の温度範囲では上記セラミック支柱4の厚さが上記セラミック基板2の厚さと同一であるかまたは小さくなる。   That is, the thickness of the ceramic support 4 is larger than the thickness of the ceramic substrate 2 in the temperature range below 500 ° C., but the thickness of the ceramic support 4 is the same as the thickness of the ceramic substrate 2 in the temperature range of 500 ° C. or more. Or smaller.

従って、500℃未満の温度範囲では上記セラミック基板2と上記焼成加圧板3が互いに離隔されてか焼工程で脱バインダ通路を確保し、500℃以上の温度範囲では上記セラミック基板2と上記焼成加圧板3が互いに接するようになり、加圧焼成が可能となる。   Accordingly, the ceramic substrate 2 and the firing pressure plate 3 are separated from each other in a temperature range of less than 500 ° C., and a debinding path is secured in the calcination process, and the ceramic substrate 2 and the firing pressurizing plate in a temperature range of 500 ° C. or more. The pressure plates 3 come into contact with each other, and pressure firing is possible.

上記焼成加圧板3は上記焼成セッター1と同一の材質であることができ、加圧によるセラミック基板2の平坦化効果を高めるために、上記焼成セッター1より密度が高い材質であることができる。   The fired pressure plate 3 can be made of the same material as the fired setter 1 and can be made of a material having a higher density than the fired setter 1 in order to enhance the flattening effect of the ceramic substrate 2 by pressurization.

図2aは本発明の他の実施形態によるセラミック基板焼成工程のうち、か焼工程を示す断面図である。   FIG. 2a is a cross-sectional view illustrating a calcination step in a ceramic substrate firing step according to another embodiment of the present invention.

図2bは本発明の他の実施形態によるセラミック基板焼成工程のうち、焼成工程を示す断面図である。   FIG. 2B is a cross-sectional view illustrating a firing process among ceramic substrate firing processes according to another embodiment of the present invention.

図3は本発明の他の実施形態によるセラミック基板焼成工程のフローチャートである。   FIG. 3 is a flowchart of a ceramic substrate firing process according to another embodiment of the present invention.

図2a、図2b及び図3を参照すると、本発明の他の実施形態によると、焼成セッター1、セラミック基板2と焼成加圧板3とを設ける段階(S1)と、上記セラミック基板2より焼成時の厚さ収縮率が大きいセラミック支柱4を設ける段階(S2)と、上記焼成セッター1の上部に上記セラミック基板2を位置させる段階(S3)と、上記焼成加圧板3と上記セラミック基板2との間に一定間隔を置くように、上記焼成セッター1と上記焼成加圧板3との間に上記セラミック支柱4を配置させる段階(S4)と、上記焼成加圧板3をセラミック支柱4の上部に位置させる段階(S5)と、を含むセラミック基板焼成方法が提供される。   Referring to FIGS. 2 a, 2 b and 3, according to another embodiment of the present invention, the firing setter 1, the ceramic substrate 2 and the firing pressure plate 3 are provided (S 1), and the ceramic substrate 2 is fired. Providing a ceramic support column 4 having a large thickness shrinkage rate (S2), positioning the ceramic substrate 2 above the firing setter 1 (S3), firing the pressing plate 3 and the ceramic substrate 2; Placing the ceramic support column 4 between the firing setter 1 and the firing pressure plate 3 so as to have a fixed interval therebetween (S4), and positioning the firing pressure plate 3 above the ceramic support column 4; A ceramic substrate firing method including step (S5).

本発明の他の実施形態によるセラミック基板焼成方法は、まず焼成セッター1、セラミック基板2と焼成加圧板3とを設ける(S1)。   In the ceramic substrate firing method according to another embodiment of the present invention, first, a firing setter 1, a ceramic substrate 2, and a firing pressure plate 3 are provided (S1).

セラミック基板2は面積が広くて厚い大型低温同時焼成用セラミック基板であり、焼成セッター1と焼成加圧板3は同一の材質であってもよく、加圧によるセラミック基板2の平坦化効果を高めるために、上記焼成セッター1より密度が高い材質であってもよい。   The ceramic substrate 2 is a large-sized and large-sized ceramic substrate for simultaneous low-temperature firing, and the firing setter 1 and the firing pressure plate 3 may be made of the same material, in order to enhance the flattening effect of the ceramic substrate 2 by pressurization. Alternatively, a material having a higher density than the fired setter 1 may be used.

次に、セラミック基板2より焼成時の厚さ収縮率が大きいセラミック支柱4を設ける(S2)。   Next, the ceramic support | pillar 4 with a larger thickness shrinkage rate at the time of baking than the ceramic substrate 2 is provided (S2).

セラミック基板2とセラミック支柱4は同一の材質であってもよく、厚さ収縮率をより大きくするために、セラミック支柱4が上記セラミック基板2より融点が低い材質であってもよい。   The ceramic substrate 2 and the ceramic support 4 may be made of the same material, and the ceramic support 4 may be made of a material having a lower melting point than the ceramic substrate 2 in order to increase the thickness shrinkage rate.

また、セラミック支柱4は未焼結焼成支柱であり、焼成前のか焼工程でセラミック基板2から脱バインダ通路を確保するために、セラミック基板2より厚さが厚く(Z軸方向高さがより高く)準備される。   Further, the ceramic support 4 is an unsintered fired support, and is thicker than the ceramic substrate 2 (the height in the Z-axis direction is higher) in order to secure a binder removal path from the ceramic substrate 2 in the calcination step before firing. ) Prepared.

次に、上記焼成セッター1の上部に上記セラミック基板2を位置させる(S3)。   Next, the ceramic substrate 2 is positioned on the firing setter 1 (S3).

上記焼成セッター1の上部に上記セラミック基板2を位置させる段階は、通常のセラミック基板の焼成工程と同一である。   The step of positioning the ceramic substrate 2 on the firing setter 1 is the same as the firing process of a normal ceramic substrate.

次に、上記焼成加圧板3と上記セラミック基板2との間に一定間隔を置くように、上記焼成セッター1と上記焼成加圧板3との間に上記セラミック支柱4を配置させ(S4)、上記焼成加圧板3をセラミック支柱4の上部に位置させる(S5)。   Next, the ceramic support column 4 is disposed between the firing setter 1 and the firing pressure plate 3 so as to place a fixed interval between the firing pressure plate 3 and the ceramic substrate 2 (S4), The firing pressure plate 3 is positioned above the ceramic support 4 (S5).

これにより、焼成セッター1の上部に位置するセラミック基板2は、その周りに位置するセラミック支柱4によって焼成加圧板3が支持されるため、焼成加圧板3と一定間隔で離隔される。   As a result, the ceramic substrate 2 positioned on the upper portion of the firing setter 1 is separated from the firing pressure plate 3 at regular intervals because the firing pressure plate 3 is supported by the ceramic support 4 positioned around the ceramic substrate 2.

上述した配置状態で、か焼工程と焼成工程が進行される(S6)。   In the arrangement state described above, the calcination process and the baking process are performed (S6).

か焼工程の間には、セラミック基板2より厚さが厚いセラミック支柱4が焼成加圧板3を支持しており、セラミック基板2とセラミック支柱4は両方ともか焼完了区間である500℃以前では収縮挙動を示さないため、セラミック基板2の脱バインダ通路を十分に確保するようになる。   During the calcination process, the ceramic support 4 thicker than the ceramic substrate 2 supports the fired pressure plate 3, and both the ceramic substrate 2 and the ceramic support 4 are before 500 ° C., which is the calcining completion section. Since the shrinkage behavior is not exhibited, a sufficient debinding path for the ceramic substrate 2 is ensured.

上記か焼工程が完了した後、700℃付近でセラミック基板2とセラミック支柱4の焼結収縮挙動が始まる。   After the calcination step is completed, the sintering shrinkage behavior of the ceramic substrate 2 and the ceramic support column 4 starts around 700 ° C.

セラミック支柱4の収縮率がセラミック基板2の収縮率より大きいため、焼結収縮時のセラミック支柱4の厚さ減少量はセラミック基板2の厚さ減少量より遥かに大きくなる。   Since the shrinkage rate of the ceramic support 4 is larger than the shrinkage rate of the ceramic substrate 2, the thickness reduction amount of the ceramic support 4 at the time of sintering shrinkage is much larger than the thickness reduction amount of the ceramic substrate 2.

従って、上記か焼工程中に離隔されていたセラミック基板2と焼成加圧板3は、上記焼成加圧板3を支持していたセラミック支柱4の厚さがセラミック基板2の厚さより遥かに大きく減少することにより、セラミック基板2の厚さと同一であるかまたはより低くなるため、互いに接触するようになる。   Therefore, in the ceramic substrate 2 and the firing pressure plate 3 which are separated from each other during the calcination step, the thickness of the ceramic support column 4 supporting the firing pressure plate 3 is much smaller than the thickness of the ceramic substrate 2. As a result, the thickness of the ceramic substrate 2 is the same as or lower than that of the ceramic substrate 2, so that they come into contact with each other.

上述のように焼成加圧板3がセラミック基板2を加圧しながら焼成が進行されるため、セラミック基板が反りを生じることなく焼成される。   Since the firing pressure plate 3 pressurizes the ceramic substrate 2 as described above, firing proceeds, the ceramic substrate is fired without warping.

以下、比較例及び実施例を用いて本発明をより詳細に説明するが、本発明はこれによって制限されない。   Hereinafter, although this invention is demonstrated in detail using a comparative example and an Example, this invention is not restrict | limited by this.

下記表1は本発明の適用結果を比較するための実験の組み合わせ及びその結果を示している。   Table 1 below shows experimental combinations and results for comparing application results of the present invention.

実験1では横×縦×厚さが250mm×250mm×2mmであるセラミック基板を使用し、実験2では横×縦×厚さが250mm×250mm×10mmであるセラミック基板を使用した。   In Experiment 1, a ceramic substrate having a width × length × thickness of 250 mm × 250 mm × 2 mm was used, and in Experiment 2, a ceramic substrate having a width × length × thickness of 250 mm × 250 mm × 10 mm was used.

比較例1は基板平坦化のための焼成加圧板を使用しない場合であり、比較例2は焼成加圧板は使用してセラミック支柱を使用せず、焼成前から焼成加圧板がセラミック基板の上部を加圧するようにした場合である。   Comparative Example 1 is a case where a firing pressure plate for flattening the substrate is not used, and Comparative Example 2 uses a firing pressure plate and does not use a ceramic support, and the firing pressure plate covers the upper part of the ceramic substrate before firing. This is a case where pressure is applied.

実施例1は焼成加圧板を使用し、本発明のグリーンセラミック支柱を使用した場合である。   Example 1 is a case where a fired pressure plate is used and the green ceramic support of the present invention is used.

実施例1において、実験1の焼成後のセラミック基板厚さは1.7mm、実験2の焼成後のセラミック基板厚さは8.43mmであった。   In Example 1, the ceramic substrate thickness after firing in Experiment 1 was 1.7 mm, and the ceramic substrate thickness after firing in Experiment 2 was 8.43 mm.

Figure 2012096980
Figure 2012096980

実験1における比較例1の結果を参照すると、セラミック基板の上部に焼成加圧板を使用しないため、基板の残炭量は少なかったが、基板反りの程度が激しく、大型基板の品質が低下した。   Referring to the result of Comparative Example 1 in Experiment 1, since no calcined pressure plate was used on the upper part of the ceramic substrate, the amount of residual carbon in the substrate was small, but the degree of substrate warpage was severe and the quality of the large substrate was lowered.

実験1における比較例2は、セラミック基板の焼成前から焼成加圧板が上部を加圧したため、焼成後の基板反りの程度は低かったが、脱バインダ通路が不十分であったため残炭量が多かった。   In Comparative Example 2 in Experiment 1, since the firing pressure plate pressed the upper part before firing the ceramic substrate, the degree of substrate warpage after firing was low, but the amount of residual carbon was large because the binder removal passage was insufficient. It was.

これに対し、実験1における実施例1は、セラミック支柱がか焼完了後まで焼成加圧板をセラミック基板から離隔させて脱バインダ通路を提供することにより、最終セラミック基板の残炭量は少なかった。   On the other hand, in Example 1 in Experiment 1, the amount of remaining carbon in the final ceramic substrate was small by providing a debinding passage by separating the firing pressure plate from the ceramic substrate until the ceramic support post-calcination was completed.

また、焼結収縮区間では、セラミック支柱の厚さ収縮により焼成加圧板がセラミック基板を加圧するため、最終セラミックの基板反りの程度も低く、基板残炭量と基板反りの程度が両方とも改善された結果を示した。   Also, in the sintering shrinkage section, the firing pressure plate presses the ceramic substrate due to the shrinkage of the thickness of the ceramic struts, so the degree of substrate warpage of the final ceramic is low, and both the amount of residual carbon and the substrate warpage are improved. The results are shown.

実験2でもグリーンセラミック支柱の使用によって同一の効果が得られた。   In Experiment 2, the same effect was obtained by using the green ceramic support.

特に、基板の厚さがより厚いほどセラミック支柱の厚さも厚くなり、セラミック支柱とセラミック基板の間隔が大きくなることができるため、脱バインダ通路がより容易に確保され、これによる残炭量の減少効果も増加した。   In particular, the thicker the substrate, the thicker the ceramic support and the greater the distance between the ceramic support and the ceramic substrate. The effect also increased.

従って、本発明のセラミック支柱による脱バインダ通路の確保及び基板平坦化の効果はセラミック基板が厚いほどより効果的である。   Therefore, the effect of securing the binder removal path and the substrate flattening by the ceramic support of the present invention is more effective as the ceramic substrate is thicker.

図5aから図5cは本発明の一実施形態によるセラミック基板焼成用装置の配置図である。   5a to 5c are layout views of an apparatus for firing a ceramic substrate according to an embodiment of the present invention.

セラミック支柱4の横×縦×厚さ及びその配置方法は、焼成セッター1とセラミック基板2のサイズに応じて自由に変更することができ、例えば、図5aから図5cに示すように変更できる。   The width × length × thickness of the ceramic support 4 and the arrangement method thereof can be freely changed according to the sizes of the firing setter 1 and the ceramic substrate 2, and can be changed, for example, as shown in FIGS. 5a to 5c.

図5aに図示されたように、セラミック支柱4は焼成セッター1の各辺に沿って夫々位置してもよく、図5bに図示されたように、焼成セッター1の各角部に夫々位置してもよい。   As shown in FIG. 5a, the ceramic columns 4 may be located along each side of the firing setter 1, and as shown in FIG. 5b, they are located at each corner of the firing setter 1, respectively. Also good.

また、図5cに図示されたように、セラミック支柱4は焼成セッター1の対向する辺に夫々位置してもよく、二つ以上のセラミック基板2の間に夫々一つがさらに位置してもよい。   Further, as shown in FIG. 5 c, the ceramic support columns 4 may be positioned on opposite sides of the firing setter 1, and one may be further positioned between two or more ceramic substrates 2.

本発明は上述の実施形態及び添付の図面により限定されず、添付の請求範囲により限定される。従って、請求範囲に記載された本発明の技術的思想を外れない範囲内で様々な形態の置換、変形及び変更が可能であり、これもまた本発明の範囲に属するといえる。   The present invention is not limited by the above embodiments and the accompanying drawings, but is limited by the appended claims. Therefore, various forms of substitutions, modifications and changes can be made without departing from the technical idea of the present invention described in the claims, and this can also be said to belong to the scope of the present invention.

1 焼成セッター
2 セラミック基板
3 焼成加圧板
4 セラミック支柱
10 セラミック基板焼成用装置
1 firing setter 2 ceramic substrate 3 firing pressure plate 4 ceramic support 10 ceramic substrate firing device

Claims (24)

セラミック基板を装着するための焼成セッターと、
前記セラミック基板の上部に位置する焼成加圧板と、
前記焼成加圧板と前記セラミック基板との間に一定間隔を置くように前記焼成セッターと前記焼成加圧板との間に配置され、前記セラミック基板より焼成時の厚さ収縮率が大きいセラミック支柱と、
を含むセラミック基板焼成装置。
A firing setter for mounting the ceramic substrate;
A firing pressure plate located on top of the ceramic substrate;
Ceramic struts disposed between the firing setter and the firing pressure plate so as to place a fixed interval between the firing pressure plate and the ceramic substrate, and having a larger thickness shrinkage rate during firing than the ceramic substrate,
A ceramic substrate firing apparatus including:
前記セラミック支柱は、か焼工程段階では前記セラミック基板の厚さより高い高さを有し、焼成工程段階では前記セラミック基板の厚さより低い高さを有する請求項1に記載のセラミック基板焼成装置。   2. The ceramic substrate firing apparatus according to claim 1, wherein the ceramic support has a height higher than a thickness of the ceramic substrate in a calcination step and has a height lower than a thickness of the ceramic substrate in a firing step. 前記セラミック基板は、か焼工程段階では前記焼成加圧板と互いに離隔され、焼成工程段階では前記焼成加圧板と接する請求項1に記載のセラミック基板焼成装置。   2. The ceramic substrate firing apparatus according to claim 1, wherein the ceramic substrate is spaced apart from the firing pressure plate in a calcination step and is in contact with the firing pressure plate in a firing step. 前記か焼工程段階は500℃未満の温度範囲で行われる請求項2または3に記載のセラミック基板焼成装置。   The ceramic substrate baking apparatus according to claim 2 or 3, wherein the calcination step is performed in a temperature range of less than 500C. 前記焼成工程段階は500℃以上の温度範囲で行われる請求項2または3に記載のセラミック基板焼成装置。   The ceramic substrate firing apparatus according to claim 2 or 3, wherein the firing step is performed in a temperature range of 500 ° C or higher. 前記セラミック支柱は前記セラミック基板と同一の材質である請求項1に記載のセラミック基板焼成装置。   The ceramic substrate firing apparatus according to claim 1, wherein the ceramic support is made of the same material as the ceramic substrate. 前記セラミック支柱は前記セラミック基板より融点が低い材質である請求項1に記載のセラミック基板焼成装置。   The ceramic substrate baking apparatus according to claim 1, wherein the ceramic support is made of a material having a melting point lower than that of the ceramic substrate. 前記焼成加圧板は前記焼成セッターと同一の材質である請求項1に記載のセラミック基板焼成装置。   The ceramic substrate firing apparatus according to claim 1, wherein the firing pressure plate is made of the same material as the firing setter. 前記焼成加圧板は前記焼成セッターより密度が高い材質である請求項1に記載のセラミック基板焼成装置。   The ceramic substrate firing apparatus according to claim 1, wherein the firing pressure plate is made of a material having a higher density than the firing setter. 前記セラミック支柱は前記焼成セッターの各辺に沿って夫々位置する請求項1に記載のセラミック基板焼成装置。   The ceramic substrate firing apparatus according to claim 1, wherein the ceramic support is positioned along each side of the firing setter. 前記セラミック支柱は前記焼成セッターの各角部に夫々位置する請求項1に記載のセラミック基板焼成装置。   The ceramic substrate firing apparatus according to claim 1, wherein the ceramic support is positioned at each corner of the firing setter. 前記セラミック支柱は前記焼成セッターの対向する辺に夫々位置し、二つ以上のセラミック基板の間に夫々一つがさらに位置する請求項1に記載のセラミック基板焼成装置。   2. The ceramic substrate firing apparatus according to claim 1, wherein the ceramic support pillars are respectively located on opposite sides of the firing setter, and one is further located between two or more ceramic substrates. 3. 焼成セッターと、セラミック基板と、焼成加圧板とを設ける段階と、
前記セラミック基板より焼成時の厚さ収縮率が大きいセラミック支柱を設ける段階と、
前記焼成セッターの上部に前記セラミック基板を位置させる段階と、
前記焼成加圧板と前記セラミック基板との間に一定間隔を置くように、前記焼成セッター上に前記セラミック支柱と前記焼成加圧板とを配置する段階と、
を含むセラミック基板焼成方法。
Providing a firing setter, a ceramic substrate, and a firing pressure plate;
Providing a ceramic column having a larger thickness shrinkage rate during firing than the ceramic substrate;
Positioning the ceramic substrate on top of the firing setter;
Disposing the ceramic strut and the firing pressure plate on the firing setter so as to place a fixed interval between the firing pressure plate and the ceramic substrate;
A ceramic substrate firing method comprising:
前記セラミック支柱は、か焼工程段階では前記セラミック基板の厚さより高い高さを有し、焼成工程段階では前記セラミック基板の厚さより低い高さを有する請求項13に記載のセラミック基板焼成方法。   The method according to claim 13, wherein the ceramic support has a height higher than a thickness of the ceramic substrate in a calcination step and has a height lower than a thickness of the ceramic substrate in a step of firing. 前記セラミック基板は、か焼工程段階では前記焼成加圧板と互いに離隔され、焼成工程段階では前記焼成加圧板と接する請求項13に記載のセラミック基板焼成方法。   The ceramic substrate firing method according to claim 13, wherein the ceramic substrate is separated from the firing pressure plate in a calcination step and is in contact with the firing pressure plate in a firing step. 前記か焼工程段階は500℃未満の温度範囲で行われる請求項14または15に記載のセラミック基板焼成方法。   The method according to claim 14 or 15, wherein the calcination step is performed in a temperature range of less than 500C. 前記焼成工程段階は500℃以上の温度範囲で行われる請求項14または15に記載のセラミック基板焼成方法。   The method of firing a ceramic substrate according to claim 14 or 15, wherein the firing step is performed in a temperature range of 500 ° C or higher. 前記セラミック支柱は前記セラミック基板と同一の材質である請求項13に記載のセラミック基板焼成方法。   The method according to claim 13, wherein the ceramic support is made of the same material as the ceramic substrate. 前記セラミック支柱は前記セラミック基板より融点が低い材質である請求項13に記載のセラミック基板焼成方法。   The method according to claim 13, wherein the ceramic support is made of a material having a melting point lower than that of the ceramic substrate. 前記焼成加圧板は前記焼成セッターと同一の材質である請求項13に記載のセラミック基板焼成方法。   The method according to claim 13, wherein the firing pressure plate is made of the same material as the firing setter. 前記焼成加圧板は前記焼成セッターより密度が高い材質である請求項13に記載のセラミック基板焼成方法。   The method according to claim 13, wherein the firing pressure plate is made of a material having a higher density than the firing setter. 前記セラミック支柱は前記焼成セッターの各辺に沿って夫々位置する請求項13に記載のセラミック基板焼成方法。   The ceramic substrate firing method according to claim 13, wherein the ceramic support is positioned along each side of the firing setter. 前記セラミック支柱は前記焼成セッターの各角部に夫々位置する請求項13に記載のセラミック基板焼成方法。   The ceramic substrate firing method according to claim 13, wherein the ceramic support is positioned at each corner of the firing setter. 前記セラミック支柱は前記焼成セッターの対向する辺に夫々位置し、二つ以上のセラミック基板の間に夫々一つがさらに位置する請求項13に記載のセラミック基板焼成方法。   The ceramic substrate firing method according to claim 13, wherein the ceramic support columns are respectively located on opposite sides of the firing setter, and one is further located between two or more ceramic substrates.
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CN113916002A (en) * 2021-11-22 2022-01-11 中国建筑材料科学研究总院有限公司 Sheet ceramic pressing and sintering device and using method thereof
WO2023184934A1 (en) * 2022-04-02 2023-10-05 中材高新氮化物陶瓷有限公司 Dynamic sintering method for nitride ceramic substrate

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CN113916002A (en) * 2021-11-22 2022-01-11 中国建筑材料科学研究总院有限公司 Sheet ceramic pressing and sintering device and using method thereof
CN113916002B (en) * 2021-11-22 2023-03-10 中国建筑材料科学研究总院有限公司 Sheet ceramic pressing and sintering device and using method thereof
WO2023184934A1 (en) * 2022-04-02 2023-10-05 中材高新氮化物陶瓷有限公司 Dynamic sintering method for nitride ceramic substrate

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