JP2012074645A - Package, package manufacturing method and piezoelectric vibrator - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a package, a package manufacturing method and a piezoelectric vibrator, capable of suppressing a manufacturing failure at mounting with a secured wide interval between external electrodes.SOLUTION: In a piezoelectric vibrator 1 (package), capable of encapsulating a piezoelectric vibration piece 4 (electronic component) in a cavity 16 formed between a plurality of mutually joint substrates, there are provided a plurality of penetration electrodes 34, 35 which penetrate through a base substrate 2 (first substrate) out of the plurality of substrates in a thickness direction, and conduct the inside of the base substrate 2 to external electrodes 21, 22 disposed outside the base substrate 2. Each penetration electrode 34, 35 is formed such that an inter-electrode pitch exposed to the external electrode 21, 22 side of the base substrate 2 is larger than an inter-electrode pitch exposed inside the base substrate 2.

Description

  The present invention relates to a package, a package manufacturing method, and a piezoelectric vibrator.

  For example, a cellular phone or a portable information terminal uses a piezoelectric vibrator using crystal or the like as a time source, a timing source such as a control signal, or a reference signal source. Various types of piezoelectric vibrators of this type are known. One of them is a two-layer structure type surface-mount package.

  This type of piezoelectric vibrator has a two-layer structure that is packaged by directly bonding the first substrate and the second substrate, and the electronic components are housed in a cavity formed between the two substrates. Has been. As one of such two-layer structure type packages, an electronic component (piezoelectric vibrating piece) encapsulated inside the cavity and a outside of the base substrate are formed by through electrodes formed on the base member (base substrate). A device in which the external electrode is electrically connected is known (see Patent Document 1).

JP 2003-209198 A

  By the way, with recent miniaturization of electronic devices, miniaturization of electronic components mounted in packages is required. As the electronic components in the package are further reduced in size, the intervals between the plurality of through electrodes electrically connected to the electronic components become narrower according to the electrode pitch of the electronic components. Furthermore, the interval between the plurality of external electrodes that are electrically connected to the plurality of through electrodes and formed outside the package is also narrowed.

  Thus, when the intervals between the plurality of external electrodes are narrowed, the workability of the package mounting process is deteriorated. For example, when a package is mounted on an electronic device using solder or the like, solder may adhere between the external electrodes at the time of reflow, and a plurality of external electrodes may be short-circuited.

  SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a package, a package manufacturing method, and a piezoelectric vibrator that can ensure a wide interval between external electrodes and suppress manufacturing defects during mounting.

In order to solve the above problems, a package of the present invention is a package in which an electronic component can be enclosed in a cavity formed between a plurality of substrates bonded to each other. A plurality of through-electrodes that penetrate through one substrate in the thickness direction and that conduct between an inner side of the first substrate and an external electrode provided on the outer side of the first substrate, and each through-electrode is provided on the first substrate The inter-electrode pitch exposed on the external electrode side is formed to be wider than the inter-electrode pitch exposed on the inner side of the first substrate.
According to the present invention, the pitch between the electrodes of the through electrodes exposed outside the first substrate is formed so as to be wider than the pitch between the electrodes of the through electrodes exposed inside the first substrate. The inter-electrode pitch of the through electrodes exposed to the outside of the first substrate can be made wider than the inter-electrode pitch of the electronic component. Thereby, since the space | interval of the external electrode electrically connected with a penetration electrode on the outer side of a 1st board | substrate can be ensured widely, the manufacturing defect at the time of package mounting can be suppressed.

The through electrode is a rod-shaped metal pin, and it is preferable that the metal pin is embedded in the first substrate so as to spread from the inner side toward the outer side.
According to the present invention, since the bar-shaped metal pin is embedded in the through hole, the inner side and the outer side of the first substrate can be reliably conducted. In addition, by embedding the metal pins so as to spread from the inside toward the outside, the pitch between the electrodes of the through electrodes exposed to the outside of the first substrate is made wider than the pitch between the electrodes of the electronic component. Can do. Thereby, since the space | interval of the external electrode electrically connected with a penetration electrode on the outer side of a 1st board | substrate can be ensured widely, the manufacturing defect at the time of package mounting can be suppressed.

Further, a through hole for arranging the metal pin is formed in the first substrate, and the through hole is formed so that the diameter of the hole gradually decreases from the inner side to the outer side of the first substrate, It is desirable that the metal pin is disposed on the inner peripheral surface of the through hole.
According to the present invention, since the through hole is formed so that the diameter of the through hole gradually decreases from the inside to the outside of the first substrate, the metal pin is placed along the inner peripheral surface of the inclined through hole. Can be placed at an angle. Then, by arranging the metal pins in an inclined manner on the inner peripheral surfaces of the plurality of through holes, the inter-electrode pitch of the through-electrodes exposed to the outside of the first substrate is wider than the inter-electrode pitch of the electronic components in the package. can do. Thereby, since the space | interval of the external electrode electrically connected with a penetration electrode on the outer side of a 1st board | substrate can be ensured widely, the manufacturing defect at the time of package mounting can be suppressed.

Further, it is desirable that a positioning portion for maintaining the posture of the metal pin is formed on at least one of the inner peripheral surface of the through hole and the metal pin.
According to the present invention, since the positioning portion for holding the posture of the metal pin is provided, the metal pin can be reliably held along the inner peripheral surface of the inclined through hole. Therefore, it is possible to prevent the metal pins from shifting during the manufacture of the package, and to ensure a wide interval between the external electrodes that are electrically connected to the through electrodes on the outside of the first substrate.

Further, it is preferable that a groove that can receive the metal pin is formed on the inner peripheral surface of the through hole along the thickness direction of the first substrate, and the groove functions as the positioning portion.
According to the present invention, since the groove capable of receiving the metal pin functions as the positioning portion, the positioning portion can be easily formed by pressing or the like. Further, by using the positioning portion as a groove, the metal pin can be reliably received, and the metal pin can be prevented from shifting during the manufacture of the package.

The package manufacturing method of the present invention is a packaging method for manufacturing a package in which an electronic component can be enclosed in a cavity formed between a plurality of substrates bonded to each other. A through electrode forming step of forming a plurality of through electrodes that pass through the substrate in the thickness direction and that conducts between the inside of the first substrate and the external electrode provided on the outside of the first substrate; A step of forming a through hole in the first substrate; and a metal pin arrangement for disposing a metal pin from the inner side toward the outer side on the inner peripheral surface of the through hole. Filling a paste material into a gap between the inner peripheral surface of the through hole and the outer peripheral surface of the metal pin to seal the gap; and the paste material filled in the through hole. Curing process to cure and It is characterized by having.
According to the present invention, since the metal pin arranging step is included, the metal pins can be arranged so as to spread from the inside toward the outside of the first substrate. Further, since the paste material is filled in the gap between the inner peripheral surface of the through hole and the outer peripheral surface of the metal pin, the paste material is inserted into the gap between the inner peripheral surface of the through hole and the outer peripheral surface of the metal pin. Can be spread. And the airtightness in a package can be maintained by hardening a paste material at a hardening process.

The package manufacturing method of the present invention is a packaging method for manufacturing a package in which an electronic component can be enclosed in a cavity formed between a plurality of substrates bonded to each other. A through electrode forming step of forming a plurality of through electrodes that pass through the substrate in the thickness direction and that conducts between the inside of the first substrate and the external electrode provided on the outside of the first substrate; A step of forming a through hole in the first substrate; and a metal pin arrangement for disposing a metal pin from the inner side toward the outer side on the inner peripheral surface of the through hole. And heating the first substrate while applying pressure, melting a part of the first substrate to obtain a first substrate material, and forming the inner peripheral surface of the through hole as a gap between the inner peripheral surface and the metal pin. To buckle and deform to fill A sealing step for sealing the gap; and a curing step for curing the first substrate material filling the gap.
According to the present invention, since the metal pin arranging step is included, the metal pins can be arranged so as to spread from the inside toward the outside of the first substrate. In addition, since the first substrate material has a sealing step of sealing the gap between the inner peripheral surface of the through hole and the outer peripheral surface of the metal pin, the inner peripheral surface of the through hole and the outer peripheral surface of the metal pin The first substrate material can be spread over the gap. And the airtightness in a package can be maintained by hardening a 1st board | substrate material at a hardening process.

A piezoelectric vibrator using the package of the present invention is characterized in that a piezoelectric vibrating piece is enclosed as the electronic component inside the cavity.
According to the present invention, it is possible to secure a wide interval between the external electrodes that are electrically connected to the through electrodes on the outside of the piezoelectric vibrator, so that it is possible to suppress manufacturing defects during mounting, and to provide a highly reliable piezoelectric vibrator. can do.

  According to the present invention, the pitch between the electrodes of the through electrodes exposed outside the first substrate is formed so as to be wider than the pitch between the electrodes of the through electrodes exposed inside the first substrate. The inter-electrode pitch of the through electrodes exposed to the outside of the first substrate can be made wider than the inter-electrode pitch of the electronic component. Thereby, since the space | interval of the external electrode electrically connected with a penetration electrode on the outer side of a 1st board | substrate can be ensured widely, the manufacturing defect at the time of package mounting can be suppressed.

1 is an external perspective view of a piezoelectric vibrator in an embodiment. It is sectional drawing which follows the AA line of FIG. FIG. 2 is an internal configuration diagram of the piezoelectric vibrator shown in FIG. 1, and is a plan view with a lid substrate removed. FIG. 2 is an exploded perspective view of the piezoelectric vibrator shown in FIG. 1. It is sectional drawing which follows the BB line of FIG. It is a flowchart of the manufacturing method of the piezoelectric vibrator of this embodiment. It is a figure which shows the state which formed the several cavity in the wafer for lid substrates. It is a figure which shows the state which patterned the bonding film and the routing electrode on the upper surface of the wafer for base substrates. It is the elements on larger scale of FIG. It is a disassembled perspective view of a wafer body. It is explanatory drawing of a through-hole formation process, and is a perspective view of a recessed part (through-hole). It is explanatory drawing of a metal pin arrangement | positioning process. It is a flowchart of the manufacturing method of the piezoelectric vibrator in the modification of embodiment. It is explanatory drawing of the sealing process in the modification of embodiment, FIG.14 (a) is explanatory drawing before sealing, FIG.14 (b) is explanatory drawing after sealing. It is explanatory drawing of a grinding | polishing process.

Hereinafter, a piezoelectric vibrator and a piezoelectric vibrating piece according to an embodiment of the present invention will be described with reference to the drawings.
As shown in FIGS. 1 to 4, in the piezoelectric vibrator 1 of the present embodiment, a base substrate 2 (corresponding to “first substrate” in the claims) and a lid substrate 3 are anodically bonded via a bonding film 23. A surface-mounted piezoelectric vibrator 1 including a piezoelectric vibrating piece 4 housed in a cavity 16.
In the following description, the bonding side of the base substrate 2 with the lid substrate 3 is referred to as the upper surface U, and the opposite surface is referred to as the lower surface L. Further, the longitudinal direction of the piezoelectric vibrating piece 4 is defined as the longitudinal direction X, the proximal end side (mounting electrode side) of the piezoelectric vibrating piece 4 is defined as −X side, and the distal end side of the piezoelectric vibrating piece 4 is described as + X side. In the following description, the width direction of the piezoelectric vibrating piece 4 is the width direction Y, the right side when viewed from the −X side is the + Y side, and the left side when viewed from the + X side is the −Y side.

(Piezoelectric vibrating piece)
The piezoelectric vibrating piece 4 is an AT-cut type vibrating piece formed of a quartz piezoelectric material, and vibrates when a predetermined voltage is applied.
The piezoelectric vibrating reed 4 includes a quartz plate 17 processed into a plate having a substantially rectangular shape in plan view and a uniform thickness, and a pair of excitation electrodes 5 and 6 disposed at positions facing both surfaces of the quartz plate 17; There are lead electrodes 19 and 20 electrically connected to the excitation electrodes 5 and 6, and mount electrodes 7 and 8 electrically connected to the lead electrodes 19 and 20.

  The excitation electrodes 5 and 6, the extraction electrodes 19 and 20, the mount electrodes 7 and 8, and the side electrode 13 are formed of, for example, a gold (Au) film. Note that these films are formed of a conductive film such as chromium (Cr), nickel (Ni), aluminum (Al), or titanium (Ti), or a laminated film combining some of these conductive films. May be.

The piezoelectric vibrating reed 4 configured in this way is bonded to the upper surface U of the base substrate 2 by, for example, flip chip bonding using bumps 11 and 12 made of gold (Au) or the like. Specifically, bumps 11 and 12 are formed on routing electrodes 9 and 10 (described later) patterned on the upper surface U of the base substrate 2, and a pair of mount electrodes 7 and 8 are in contact with the bumps 11 and 12, respectively. In this state, they are joined by flip chip bonding. As a result, the piezoelectric vibrating reed 4 is supported in a floating state by the thickness of the bumps 11 and 12 from the upper surface U of the base substrate 2, and the mount electrodes 7 and 8 and the routing electrodes 9 and 10 are electrically connected to each other. It is in a connected state.
The mounting method of the piezoelectric vibrating reed 4 is not limited to flip chip bonding, and the piezoelectric vibrating reed 4 may be bonded to the upper surface U of the base substrate 2 using, for example, a conductive adhesive.

(Piezoelectric vibrator)
The lid substrate 3 is a substrate capable of anodic bonding made of a glass material, for example, soda-lime glass, and is formed in a substantially plate shape. A cavity 16 that accommodates the piezoelectric vibrating reed 4 is formed on the side of the lid substrate 3 that is bonded to the base substrate 2. The lid substrate 3 is anodically bonded to the base substrate 2 with the cavity 16 facing the base substrate 2 side.

The base substrate 2 is a substrate made of a glass material, for example, soda lime glass, and is formed in a substantially plate shape with the same outer shape as the lid substrate 3.
On the upper surface U of the base substrate 2, a bonding film 23 for anodic bonding is patterned by a conductive material such as aluminum (Al) or silicon (Si). The bonding film 23 is formed along the periphery of the base substrate 2 so as to surround the periphery of the cavity 16 formed in the lid substrate 3.

A pair of lead-out electrodes 9 and 10 are patterned on the upper surface U of the base substrate 2. The pair of lead-out electrodes 9 and 10 are formed at positions corresponding to the mount electrodes 7 and 8 of the piezoelectric vibrating piece 4.
Bumps 11 and 12 are formed on the pair of lead-out electrodes 9 and 10, respectively, and the mount electrodes 7 and 8 of the piezoelectric vibrating piece 4 are mounted by flip chip bonding using the bumps 11 and 12, respectively. Thereby, one mount electrode 7 of the piezoelectric vibrating reed 4 is electrically connected to one through electrode 34 via one routing electrode 9, and the other mount electrode 8 is passed through the other routing electrode 10 to the other penetration electrode. The electrode 35 is electrically connected.

(Penetration electrode)
FIG. 5 is a cross-sectional view taken along line BB in FIG.
As shown in FIGS. 2, 3, and 5, a pair of through electrodes 34 and 35 are formed on the −X side of the base substrate 2. The through electrode 34 and the through electrode 35 are the same. Therefore, in the following description, the through electrode 34 is described, and the description of the through electrode 35 is omitted.

  The through electrode 34 is formed by a rod-shaped metal pin 14. The metal pin 14 is disposed inside the through hole 24 formed corresponding to the position where the through electrode 34 is formed, and the periphery thereof is filled with a paste material 44. The through electrode 34 plays a role in conducting the lead electrode 9 and an external electrode 21 described later.

  The through hole 24 is formed at a position corresponding to the mount electrode 7 of the piezoelectric vibrating piece 4 where the through electrode 34 is formed. The through hole 24 is formed to have a substantially truncated cone shape, and the diameter of the through hole 24 is formed so as to gradually decrease from the upper surface U toward the lower surface L.

  Further, a positioning portion 24 a for arranging the metal pin 14 is formed on a part of the inner peripheral surface of the through hole 24. The positioning portion 24a is a groove along the thickness direction of the base substrate 2, and is formed so that a cross-sectional shape in a direction perpendicular to the central axis O is a substantially semicircular shape. The radius of the positioning portion 24a is set to be slightly larger than the radius of the metal pin.

The metal pin 14 is a conductive rod-like member formed of a metal material such as stainless steel, silver (Ag), nickel (Ni) alloy, aluminum (Al), or the like. In particular, it is desirable to form an alloy (42 alloy) containing 58 weight percent iron (Fe) and 42 weight percent nickel (Ni).
By arranging the metal pin 14 in the positioning portion 24 a, the metal pin 14 is arranged along the inner peripheral surface of the through hole 24. Therefore, the metal pins 14 are arranged so as to be inclined from the −Y side to the + Y side from the upper surface U to the lower surface L of the base substrate 2. Since the through electrode 34 and the through electrode 35 are symmetrical, the metal pin 15 is disposed so as to be inclined from the + Y side to the −Y side from the upper surface U to the lower surface L of the base substrate 2. .

  The metal pin 14 and the through hole 24 are fixed by a paste material 44. The paste material 44 is, for example, a glass frit mainly composed of powdered glass and an organic solvent that is a solvent. After filling the gap between the outer surface of the metal pin 14 and the inner peripheral surface of the through hole 24 with the paste material 44, the paste material 44 is fired to seal the through hole 24. The paste material 44 fixes the metal pin 14 and seals the through hole 24 to maintain the airtightness of the cavity 16.

(External electrode)
A pair of external electrodes 21 and 22 are formed on the lower surface L of the base substrate 2. The pair of external electrodes 21 and 22 are formed on the −X side of the base substrate 2 and are electrically connected to the pair of through electrodes 34 and 35, respectively.
Here, as described above, the metal pins 14 and 15 forming the through electrodes 34 and 35 are disposed so as to be inclined along the inner peripheral surfaces of the through holes 24 and 25. Therefore, the pitch of the metal pins 14 and 15 on the lower surface L side of the base substrate 2 is wider than the pitch on the upper surface U side of the base substrate 2. Correspondingly, the interval between the external electrode 21 and the external electrode 22 formed on the lower surface L of the base substrate 2 is larger than the interval between the routing electrode 9 and the routing electrode 10 formed on the upper surface U of the base substrate 2. External electrodes 21 and 22 are formed so as to be wider.

  As an example of the electrode pitch of the electrodes corresponding to the external electrodes 21 and 22 of the currently marketed package, the electrode pitch is 0.3 mm in a 1.6 mm × 1.2 mm package. However, as described above, by arranging the metal pins 14 and 15 to be inclined, the electrode pitch of the external electrodes 21 and 22 can be formed so as to be wider than 0.3 mm. Moreover, even if the package is smaller than the 1.6 mm × 1.2 mm package, the electrode pitch of the external electrodes 21 and 22 can be secured to 0.3 mm or more.

  When the piezoelectric vibrator 1 configured as described above is operated, a predetermined drive voltage is applied to the external electrodes 21 and 22 formed on the base substrate 2. As a result, a current can be passed through the excitation electrode including the first excitation electrode 5 and the second excitation electrode 6 of the piezoelectric vibrating piece 4 and can be vibrated at a predetermined frequency. The vibration can be used as a control signal timing source, a reference signal source, or the like.

(Piezoelectric vibrator manufacturing method)
Next, a method for manufacturing the above-described piezoelectric vibrator 1 will be described with reference to a flowchart.
FIG. 6 is a flowchart of the manufacturing method of the piezoelectric vibrator 1 of the present embodiment.
FIG. 7 is a view showing a state in which a plurality of cavities 16 are formed in the lid substrate wafer.
FIG. 8 is a diagram showing a state where the bonding film and the routing electrode are patterned on the upper surface of the base substrate wafer.
FIG. 9 is a partially enlarged view of FIG.
FIG. 10 is an exploded perspective view of the wafer body.
Here, the dotted lines shown in FIG. 8 to FIG. 10 illustrate the cutting line M to be cut in the cutting process to be performed later.
The piezoelectric vibrator manufacturing method according to the present embodiment mainly includes a piezoelectric vibrating piece manufacturing step S10, a lid substrate wafer manufacturing step S20, a base substrate wafer manufacturing step S30, and an assembly step (S50 and subsequent steps). is doing. Among them, the piezoelectric vibrating piece producing step S10, the lid substrate wafer producing step S20, and the base substrate wafer producing step S30 can be performed in parallel.

(Piezoelectric vibrating piece manufacturing step S10)
In the piezoelectric vibrating piece producing step S10, the piezoelectric vibrating piece 4 shown in FIGS. 2 to 5 is produced. Specifically, a quartz Lambert rough is first sliced at a predetermined angle to obtain a wafer having a constant thickness. Subsequently, the wafer is lapped and rough processed, and then mirror polishing such as polishing is performed to obtain a wafer having a constant thickness. Subsequently, after appropriate processing such as cleaning is performed on the wafer, a metal film is formed and patterned by photolithography, and the excitation electrodes 5 and 6, the extraction electrodes 19 and 20, and the mount electrode 7 are formed. , 8 and the side electrode 13 are formed. Thereby, a plurality of piezoelectric vibrating reeds 4 are produced.

(Lid substrate wafer manufacturing step S20)
In the lid substrate wafer manufacturing step S20, as shown in FIG. 7, a lid substrate wafer 50 to be a lid substrate later is manufactured. First, the disc-shaped lid substrate wafer 50 made of soda-lime glass is polished and washed to a predetermined thickness, and then the outermost work-affected layer is removed by etching or the like (S21). Next, in the cavity forming step S <b> 22, a plurality of cavities 16 are formed on the bonding surface of the lid substrate wafer 50 with the base substrate wafer 40. The cavity 16 is formed by hot press molding or etching.

(Base substrate wafer manufacturing step S30)
In the base substrate wafer manufacturing step S30, as shown in FIG. 8, a base substrate wafer 40 to be a base substrate later is manufactured. First, the disc-shaped base substrate wafer 40 made of soda-lime glass is polished and washed to a predetermined thickness, and then the work-affected layer on the outermost surface is removed by etching or the like (S31).

(Penetration electrode forming step S30A)
Next, a through electrode forming step S30A for forming a pair of through electrodes 34 and 35 on the base substrate wafer 40 is performed. Below, this penetration electrode formation process S30A is demonstrated in detail. The through electrode 34 and the through electrode 35 have the same shape. Therefore, although the following description will be given by taking the formation process of the through electrode 34 as an example, the same applies to the formation process of the through electrode 35.

  The through-electrode forming step S30A includes a through-hole forming step S32 for forming a recess to be a through-hole 24 (see FIG. 5) after the base substrate wafer 40, and a metal pin 14 (see FIG. 5) on the inner peripheral surface of the recess. And a metal pin arranging step S33. Moreover, it has the filling process S34 which fills the clearance gap between the recessed part and the metal pin 14, and the hardening process S35 which hardens the paste material 44. Furthermore, the base substrate wafer is polished to remove the bottom of the concave portion, and the polishing step S36 for exposing the metal pins 14 is provided.

(Through hole forming step S32)
FIG. 11 is a perspective view of the recess 24b.
In the through electrode forming step S30A, a through hole forming step S32 for forming a recess 24b to be the subsequent through hole 24 in the base substrate wafer 40 is performed. In the present embodiment, as shown in FIG. 11, the concave portion 24 b is formed by pressing so that the diameter of the hole gradually decreases from the upper surface U to the lower surface L of the base substrate wafer 40. At this time, the positioning portion 24a for arranging the metal pin 14 is simultaneously molded on a part of the inner peripheral surface of the recess 24b.
As a specific through hole forming step S32, the upper surface U of the base substrate wafer 40 is pressed while heating the press die. As a result, a mortar-shaped recess 24b and a substantially semicircular positioning portion 24a along the inner peripheral surface of the recess 24b are formed on the base substrate wafer 40. The concave portion 24b may be formed by sandblasting, etching, or the like. Moreover, you may form as the through-hole 24, without providing the bottom part 24c of the recessed part 24b.

(Metal pin placement step S33)
FIG. 12 is an explanatory diagram of the metal pin placement step S33.
In the metal pin arranging step S33, as shown in FIG. 12, the metal pin 14 is arranged in the positioning portion 24a. Specifically, the metal pins 14 are inserted and arranged from the upper surface U of the base substrate wafer 40 into the positioning portion 24a so that the central axis of the metal pins 14 and the central axis of the positioning portion 24a substantially coincide with each other. At this time, the metal pins 14 are arranged so as to be inclined from the −Y side to the + Y side from the upper surface U to the lower surface L of the base substrate 2. Since the metal pins 15 are arranged symmetrically with the metal pins 14, they are arranged so as to be inclined from the + Y side to the −Y side from the upper surface U to the lower surface L of the base substrate 2.

(Filling step S34)
Subsequently, a filling step S34 for filling the paste material 44 (see FIG. 2) between the recess 24b and the metal pin 14 is performed. As described above, the paste material 44 is a member made of, for example, glass frit. In the filling step S34, the base substrate wafer 40 is transported and set in a chamber (both not shown) of a vacuum screen printer maintained in a reduced pressure atmosphere. Thereafter, the paste material 44 is applied to the upper surface U of the base substrate wafer 40. Then, in a reduced pressure atmosphere, a squeegee (not shown) is scanned on the upper surface U of the base substrate wafer 40 to fill the recess 24b with the paste material 44.

(Curing step S35)
Subsequently, a curing step S35 is performed in which the paste material 44 filled in the recess 24b is baked and cured. For example, after the base substrate wafer 40 is transferred to a baking furnace, it is held in an atmosphere at about 600 ° C. for about 30 minutes. Thereby, the paste material 44 is solidified, and the recess 24b, the paste material 44, and the metal pin 14 are fixed to each other.

(Polishing step S36)
Subsequently, a polishing step S36 is performed in which at least the lower surface L of the base substrate wafer 40 is polished to remove the bottom 24c of the recess 24b. By polishing the lower surface L and removing the bottom 24c (see FIGS. 11 and 12) of the recess 24b, the tip of the metal pin 14 is exposed to the lower surface L. Further, the upper surface U is polished as necessary. Thereby, the front-end | tip of the metal pin 14 can be exposed to the upper surface U reliably.

Here, the metal pins 14 are arranged so as to be inclined from the −Y side to the + Y side from the upper surface U to the lower surface L of the base substrate 2, and the metal pins 15 are arranged from the upper surface U to the lower surface L of the base substrate 2. It is arranged so as to incline from the + Y side to the -Y side. Therefore, the pitch between the metal pins 14 and the metal pins 15 exposed on the lower surface L of the base substrate wafer 40 is wider than the pitch between the metal pins 14 and the metal pins 15 exposed on the upper surface U of the base substrate wafer 40.
When the polishing step S36 is performed, the through electrode forming step S30A is completed.

(Junction film forming step S37, routing electrode forming step S38)
Next, a bonding film forming step S37 is performed to pattern the conductive material on the upper surface U of the base substrate wafer 40 to form the bonding film 23 (see FIG. 9). In addition, a lead electrode forming step S38 is performed to form a plurality of lead electrodes 9, 10 (see FIG. 9) electrically connected to the through electrodes 34, 35, respectively. Then, bumps 11 and 12 (see FIG. 4) made of gold or the like are formed on the routing electrodes 9 and 10, respectively. In FIG. 8 to FIG. 10, the illustration of the bumps is omitted for easy viewing of the drawings.

(External electrode forming step S40)
Next, a conductive material is patterned on the lower surface L of the base substrate wafer 40 to form a pair of external electrodes 21 and 22 (see FIG. 5) electrically connected to the pair of through electrodes 34 and 35, respectively. An external electrode forming step S40 is performed.
As described above, the pitch between the metal pins 14 and the metal pins 15 exposed on the lower surface L of the base substrate wafer 40 is wider than the pitch between the metal pins 14 and the metal pins 15 exposed on the upper surface U of the base substrate wafer 40. ing. Therefore, the interval between the external electrodes 21 and 22 formed on the lower surface L of the base substrate 2 is formed to be wider than the interval between the routing electrodes 9 and 10 formed on the upper surface U of the base substrate 2. Through this step, the piezoelectric vibrating reed 4 is electrically connected to the external electrodes 21 and 22 through the through electrodes 34 and 35.
When the external electrodes 21 and 22 are formed, the base substrate wafer manufacturing step S30 ends.

(Piezoelectric vibrator assembly process after mounting process S50)
Next, a mounting step S50 is performed in which the piezoelectric vibrating reed 4 is bonded onto the routing electrodes 9 and 10 of the base substrate wafer 40 via the bumps 11 and 12. Specifically, the piezoelectric vibrating reed 4 is picked by a bonding head (not shown) of a flip chip bonder, the bonding head is vibrated while heating the bumps 11 and 12 to a predetermined temperature, and the piezoelectric vibrating reed 4 is bumped by the bumps 11 and 12. Press on. As a result, the mount electrodes 7 and 8 are flip-chip bonded to the bumps 11 and 12 with the crystal plate 17 of the piezoelectric vibrating reed 4 floating from the upper surface U of the base substrate wafer 40.

  After the mounting of the piezoelectric vibrating reed 4 is completed, an overlaying step S60 for overlaying the lid substrate wafer 50 on the base substrate wafer 40 is performed. Specifically, both wafers 40 and 50 are aligned at the correct position while using a reference mark (not shown) as an index. As a result, the piezoelectric vibrating reed 4 mounted on the base substrate wafer 40 is accommodated in the cavity 16 of the lid substrate wafer 50 and the base substrate wafer 40.

  After the superposition step S60, the superposed wafers 40 and 50 are put into an anodic bonding apparatus (not shown), and a bonding step S70 is performed in which a predetermined voltage is applied in a predetermined temperature atmosphere to perform anodic bonding. Specifically, a predetermined voltage is applied between the bonding film 23 and the lid substrate wafer 50. As a result, an electrochemical reaction occurs at the interface between the bonding film 23 and the lid substrate wafer 50, and the two are firmly bonded and anodically bonded.

  Next, a cutting process S80 is performed in which the bonded wafer body 60 is cut along the cutting line M (see FIG. 10) to make pieces. As a result, the piezoelectric vibrating reed 4 is sealed in the cavity 16 formed between the base substrate 2 and the lid substrate 3 that are anodically bonded to each other, and the two-layer structure surface mount type piezoelectric vibration shown in FIG. A plurality of children 1 can be manufactured at a time.

  Thereafter, an internal electrical characteristic inspection S90 is performed. That is, the resonance frequency, resonance resistance value, drive level characteristic (excitation power dependence of resonance frequency and resonance resistance value), etc. of the piezoelectric vibrating reed 4 are measured and checked. Also check the insulation resistance characteristics. Then, an external appearance inspection of the piezoelectric vibrator 1 is performed to check dimensions and quality. When all the checks are completed, the manufacture of the piezoelectric vibrator 1 is finished.

(effect)
According to the present embodiment, the pitch between the through electrodes 34 and 35 exposed outside the base substrate 2 is formed to be wider than the pitch between the through electrodes 34 and 35 exposed inside the base substrate 2. Therefore, the interelectrode pitch of the through electrodes 34 and 35 exposed to the outside of the base substrate 2 can be made wider than the interelectrode pitch of the mount electrodes 7 and 8 of the piezoelectric vibrating reed 4 in the piezoelectric vibrator 1. it can. Thereby, since the space | interval of the external electrodes 21 and 22 electrically connected with the penetration electrodes 34 and 35 can be ensured on the outer side of the base substrate 2, the manufacturing defect at the time of mounting the piezoelectric vibrator 1 can be suppressed.

  Further, according to the present embodiment, since the rod-like metal pins 14 and 15 are embedded in the through holes 24 and 25, the inner side and the outer side of the base substrate 2 can be reliably conducted. Further, since the metal pins 14 and 15 are embedded so as to spread outward from the inside toward the outside, they are exposed to the outside of the base substrate 2 rather than the pitch between the electrodes of the mount electrodes 7 and 8 of the piezoelectric vibrating piece 4. The pitch between the through electrodes 34 and 35 can be increased. Thereby, since the space | interval of the external electrodes 21 and 22 electrically connected with the penetration electrodes 34 and 35 can be ensured on the outer side of the base substrate 2, the manufacturing defect at the time of mounting the piezoelectric vibrator 1 can be suppressed.

  Further, according to the present embodiment, since the through holes 24 and 25 are formed so that the diameter of the through holes 24 and 25 gradually decreases from the inside to the outside of the base substrate 2, the metal pins are formed on the inner peripheral surfaces of the inclined through holes 24 and 25. By aligning 14 and 15, the metal pins 14 and 15 can be inclined and arranged. Then, by arranging the metal pins 14 and 15 to be inclined on the inner peripheral surfaces of the plurality of through holes 24 and 25, the outside of the base substrate 2 is larger than the pitch between the electrodes of the mount electrodes 7 and 8 of the piezoelectric vibrating reed 4. It is possible to widen the pitch between the through electrodes 34 and 35 exposed to the electrode. Thereby, since the space | interval of the external electrodes 21 and 22 electrically connected with the penetration electrodes 34 and 35 can be ensured on the outer side of the base substrate 2, the manufacturing defect at the time of mounting the piezoelectric vibrator 1 can be suppressed.

  Moreover, according to this embodiment, since it has the positioning parts 24a and 25a for hold | maintaining the attitude | position of the metal pins 14 and 15, the metal pins 14 and 15 are provided in the inner peripheral surface of the through-holes 24 and 25 inclined. Can be held along with certainty. Accordingly, it is possible to prevent the metal pins 14 and 15 from being displaced during the manufacture of the piezoelectric vibrator 1 and to ensure a wide interval between the external electrodes 21 and 22 electrically connected to the through electrodes 34 and 35 outside the base substrate 2. it can.

  Furthermore, according to the present embodiment, since the grooves that can receive the metal pins 14 and 15 function as the positioning portions 24a and 25a, the positioning portions 24a and 25a can be easily formed by a press or the like. Further, by using the positioning portions 24a and 25a as grooves, the metal pins 14 and 15 can be reliably received, and the metal pins 14 and 15 can be prevented from being displaced during the manufacture of the piezoelectric vibrator 1.

  Moreover, according to this embodiment, since it has metal pin arrangement | positioning process S33, the metal pins 14 and 15 can be inclined and arrange | positioned along the internal peripheral surface of the through-holes 24 and 25. FIG. Moreover, since it has filling process S34 which fills the clearance gap between the internal peripheral surface of the through-holes 24 and 25 and the external peripheral surface of the metal pins 14 and 15, the internal peripheral surface of the through-holes 24 and 25 and metal The paste material can be spread over the gaps between the outer peripheral surfaces of the pins 14 and 15. And the airtightness in the piezoelectric vibrator 1 can be maintained by hardening a paste material by hardening process S35.

(Modification of Embodiment, Method for Manufacturing Piezoelectric Vibrator Having Sealing Process)
Next, a modification of the embodiment will be described.
FIG. 13 is a flowchart of a method for manufacturing the piezoelectric vibrator 1 according to a modification of the embodiment.
FIG. 14 is an explanatory diagram of a sealing step S34A in a modification of the embodiment, FIG. 14 (a) is an explanatory diagram before sealing, and FIG. 14 (b) is an explanatory diagram after sealing.
In the above-described embodiment, in the through electrode forming step S30A, the paste materials 44 and 45 (see FIG. 5) such as glass frit are filled in the recesses 24b and 25b in the filling step S34, and then the paste materials 44 and 45 in the curing step S35. Was cured by baking.
However, in the modified example, in the through electrode forming step S30A, the base substrate wafer 40 is buckled and deformed in the sealing step S34A to seal the recesses 24b and 25b, and in the curing step S35A, the buckled and deformed base substrate is formed. The difference is that the wafer 40 and the base substrate wafer material are cooled and cured. Since the configuration other than the sealing step S34A, the curing step S35A, and the polishing step S36 is the same as that of the above-described embodiment, the description thereof is omitted.

(Sealing process S34A)
As shown in FIG. 14, the sealing step S34A includes a receiving die 80 having a receiving portion 80a into which the base substrate wafer 40 can be inserted, and a pressure die 82 that presses the base substrate wafer 40 inserted into the receiving portion 80a. To do.
Specifically, first, the base substrate wafer 40 is set in the receiving portion 80 a of the receiving mold 80, and then the receiving mold 80 is placed together with the base substrate wafer 40 in a heating furnace (not shown).
Subsequently, the heating furnace is heated to a predetermined temperature. 14A, the base substrate wafer 40 is pressed by the pressing die 82 using a press machine (not shown) or the like while melting a part of the surface layer portion of the base substrate wafer 40. To do. As a result, as shown in FIG. 14B, the base substrate wafer material 40a can be buckled and the gaps between the recesses 24b and 25b and the metal pins 14 and 15 can be filled.

(Curing step S35A)
In the curing step S35A, the base substrate wafer 40 is taken out of the heating furnace, and the molten base substrate wafer material 40a is naturally cooled. In the curing step S35A, the base substrate wafer material 40a that has been melted and buckled and deformed is cooled and cured. Therefore, the base substrate wafer 40 and the metal pins 14 and 15 can be fixed integrally, and the recesses 24b and 25b can be sealed.

(Polishing step S36)
FIG. 15 is an explanatory view of the polishing step S36. After the curing step S35A, the tips of the metal pins 14 and 15 on the opening side of the recesses 24b and 25b are covered with the base substrate wafer material 40a that has melted and buckled. Therefore, the base substrate wafer 40 may not be exposed from the upper surface. Further, as in the first embodiment, it is necessary to remove the bottoms of the recesses 24b and 25b. Therefore, a polishing step S36 for polishing the upper surface and the lower surface of the base substrate wafer 40 is performed. As a result, as shown in FIG. 15, the tips of the metal pins 14 and 15 are reliably exposed on the surface of the base substrate wafer 40.

(Effect of Modification of Embodiment)
According to the modification of the present embodiment, since the metal pin arrangement step S33 is provided, the metal pins 14 and 15 can be inclined and arranged on the inner peripheral surfaces of the through holes 24 and 25. Further, since the base substrate wafer material 40a has the sealing step S34A for sealing the gap between the inner peripheral surface of the through holes 24, 25 and the outer peripheral surface of the metal pins 14, 15, the through holes 24, 25 are provided. The base substrate wafer material 40a can be spread over the gap between the inner peripheral surface of the metal pin 14 and the outer peripheral surface of the metal pins 14 and 15. And the airtightness in the piezoelectric vibrator 1 can be maintained by hardening the base substrate wafer material 40a in the hardening step S35A.

The present invention is not limited to the embodiment described above.
In the present embodiment, the piezoelectric vibrator 1 in which the AT-cut type piezoelectric vibrating piece 4 is enclosed in the package has been described as an example. However, the present invention is not limited to this, and a tuning fork type piezoelectric vibrating piece may be enclosed inside the package. Further, an element other than the piezoelectric vibrating piece may be enclosed.

  In the bonding film forming step S37 of this embodiment, the bonding film 23 is formed by patterning a conductive material on the upper surface U of the base substrate wafer 40. However, for example, the bonding film 23 may be formed by patterning a conductive material on the mating surface side of the lid substrate wafer 50 with the base substrate wafer 40.

  In the present embodiment, the recesses 24b and 25b are formed in the base substrate wafer 40, the metal pins 14 and 15 are disposed in the recesses 24b and 25b, and the recesses 24b and 25b are filled with the paste material 44, thereby penetrating. Electrodes 34 and 35 are formed. However, for example, by forming a through hole in the base substrate wafer 40, arranging the metal pins 14 and 15 in the recesses 24b and 25b, and filling the recesses 24b and 25b with the paste material 44, the through electrodes 34, 35 may be formed. However, by using the recesses 24b and 25b as in the present embodiment, the metal pins 14 and 15 can be prevented from dropping and the paste material 44 from leaking in the through electrode forming step S30A. Therefore, this embodiment has an advantage from the viewpoint of workability.

  In the present embodiment, the recesses 24b and 25b are formed in the base substrate wafer 40, the metal pins 14 and 15 are disposed in the recesses 24b and 25b, and the recesses 24b and 25b are filled with the paste material 44, thereby penetrating. Electrodes 34 and 35 are formed. However, for example, after the base substrate wafer 40 is heated and softened, the metal pins 14 and 15 may be press-fitted to form the through electrodes 34 and 35. However, since it is necessary to press-fit the metal pins 14 and 15 obliquely, this embodiment is advantageous in terms of workability.

  In the present embodiment, the through electrodes 34 and 35 are formed by the metal pins 14 and 15. However, the through electrode may be formed by forming an electrode film in a part of the recesses 24b and 25b by sputtering or the like, for example. However, it is necessary to form the electrode pattern by masking the inside of the recesses 24b and 25b, which is complicated, and this embodiment is advantageous.

  In this embodiment, as shown in FIGS. 14 and 15, a pair of metal pins 14 and 15 are arranged so as to extend from the upper surface U to the lower surface L of the base substrate wafer 40 to form through electrodes 34 and 35. ing. However, for example, the base substrate wafer 40 is turned upside down so that the lower surface L faces upward, a recess is formed in the lower surface L, and the pair of metal pins 14 from the lower surface L toward the upper surface U. 15 may be arranged so as to be tapered. Thereafter, by reversing the front and back of the base substrate wafer 40 and manufacturing the package, the metal pins 14 and 15 can be arranged in a divergent manner from the inside to the outside of the package, as in the present embodiment.

DESCRIPTION OF SYMBOLS 1 ... Piezoelectric vibrator (package) 2 ... Base board | substrate (1st board | substrate) 4 ... Piezoelectric vibration piece (electronic component) 14 ... Metal pin 15 ... Metal pin 16 ... Cavity 21 , 22 ... External electrodes 24, 25 ... Through holes (recesses) 24a, 25a ... Positioning parts (positioning means) 24b, 25b ... Recesses 34, 35 ... Through electrodes 44 ... Paste Material S30A ... Through-electrode forming step S32 ... Through-hole forming step S33 ... Metal pin placement step S34 ... Filling step S34A ... Sealing step S35 ... Hardening step S35A ... Hardening step

Claims (8)

A package capable of enclosing electronic components in a cavity formed between a plurality of substrates bonded together,
Among the plurality of substrates, a plurality of through-electrodes that penetrate the first substrate in the thickness direction and conduct the inner electrode of the first substrate and an external electrode provided on the outer side of the first substrate,
Each through electrode is formed such that the inter-electrode pitch exposed on the external electrode side of the first substrate is wider than the inter-electrode pitch exposed on the inner side of the first substrate. Features a package. The through electrode is a rod-shaped metal pin,
2. The package according to claim 1, wherein the metal pin is embedded in the first substrate so as to spread outwardly from the inner side toward the outer side. Forming a through hole for arranging the metal pin in the first substrate;
Forming the through hole so that the diameter of the hole gradually decreases from the inner side to the outer side of the first substrate;
The package according to claim 2, wherein the metal pin is disposed on an inner peripheral surface of the through hole.   4. The package according to claim 3, wherein a positioning portion for holding the posture of the metal pin is formed on at least one of the inner peripheral surface of the through hole and the metal pin.   A groove is formed on an inner peripheral surface of the through hole along the thickness direction of the first substrate and capable of receiving the metal pin, and the groove functions as the positioning portion. 4. The package according to 4. A packaging method for manufacturing a package capable of enclosing an electronic component in a cavity formed between a plurality of substrates bonded to each other,
Among the plurality of substrates, a through electrode that forms a plurality of through electrodes that penetrate the first substrate in the thickness direction and that conducts between the inside of the first substrate and the external electrode provided on the outside of the first substrate With a forming process,
The through electrode forming step includes:
A through hole forming step of forming a through hole in the first substrate;
A metal pin arrangement step of arranging a metal pin on the inner peripheral surface of the through-hole so as to spread from the inside toward the outside;
A filling step of filling the gap between the inner circumferential surface of the through hole and the outer circumferential surface of the metal pin with a paste material and sealing the gap;
A curing step of curing the paste material filled in the through hole;
A package manufacturing method characterized by comprising: A packaging method for manufacturing a package capable of enclosing an electronic component in a cavity formed between a plurality of substrates bonded to each other,
Among the plurality of substrates, a through electrode that forms a plurality of through electrodes that penetrate the first substrate in the thickness direction and that conducts between the inside of the first substrate and the external electrode provided on the outside of the first substrate With a forming process,
The through electrode forming step includes:
A through hole forming step of forming a through hole in the first substrate;
A metal pin arrangement step of arranging a metal pin on the inner peripheral surface of the through-hole so as to spread from the inside toward the outside;
The first substrate is heated while being pressurized, a part of the first substrate is melted to form a first substrate material, and the inner peripheral surface of the through hole is filled with a gap between the inner peripheral surface and the metal pin. Sealing step of buckling and sealing the gap,
A curing step of curing the first substrate material filling the gap;
A package manufacturing method characterized by comprising: 6. The piezoelectric vibrator according to claim 1, wherein a piezoelectric vibrating piece is enclosed as the electronic component inside the cavity. 7.

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