JP2012058432A - 半導体ゲイン領域集積型マッハツェンダ変調器 - Google Patents

半導体ゲイン領域集積型マッハツェンダ変調器 Download PDF

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Publication number
JP2012058432A
JP2012058432A JP2010200611A JP2010200611A JP2012058432A JP 2012058432 A JP2012058432 A JP 2012058432A JP 2010200611 A JP2010200611 A JP 2010200611A JP 2010200611 A JP2010200611 A JP 2010200611A JP 2012058432 A JP2012058432 A JP 2012058432A
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mach
zehnder modulator
signal
modulator
gain region
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JP2010200611A
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English (en)
Japanese (ja)
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JP2012058432A5 (enExample
Inventor
Hideo Arimoto
英生 有本
Shigeki Makino
茂樹 牧野
Takeshi Kitatani
健 北谷
Kazunori Shinoda
和典 篠田
Aki Takei
亜紀 武居
Takafumi Taniguchi
隆文 谷口
Hiroaki Hayashi
宏暁 林
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Opnext Japan Inc
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Opnext Japan Inc
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Priority to JP2010200611A priority Critical patent/JP2012058432A/ja
Publication of JP2012058432A publication Critical patent/JP2012058432A/ja
Publication of JP2012058432A5 publication Critical patent/JP2012058432A5/ja
Pending legal-status Critical Current

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  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Semiconductor Lasers (AREA)
JP2010200611A 2010-09-08 2010-09-08 半導体ゲイン領域集積型マッハツェンダ変調器 Pending JP2012058432A (ja)

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JP2010200611A JP2012058432A (ja) 2010-09-08 2010-09-08 半導体ゲイン領域集積型マッハツェンダ変調器

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JP2010200611A JP2012058432A (ja) 2010-09-08 2010-09-08 半導体ゲイン領域集積型マッハツェンダ変調器

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JP2012058432A true JP2012058432A (ja) 2012-03-22
JP2012058432A5 JP2012058432A5 (enExample) 2013-07-25

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109613510A (zh) * 2019-01-21 2019-04-12 杭州光预科技有限公司 用于小目标探测或实时跟踪成像的微波光子雷达实现方法及系统
JP2019128597A (ja) * 2018-01-19 2019-08-01 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツングＲｏｂｅｒｔ Ｂｏｓｃｈ Ｇｍｂｈ 電気光学移相器のための温度フィードバック

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04198913A (ja) * 1990-11-29 1992-07-20 Fujitsu Ltd 電界吸収型半導体光変調器
JPH04326585A (ja) * 1991-04-25 1992-11-16 Fujitsu Ltd レーザ・光変調器集積化光源
JPH0758310A (ja) * 1993-08-09 1995-03-03 Hitachi Ltd 光集積回路
JPH09101491A (ja) * 1995-10-05 1997-04-15 Nec Corp 半導体マッハツェンダ変調装置およびその製造方法
JP2004061556A (ja) * 2002-07-24 2004-02-26 Fujitsu Ltd 電界吸収型光変調器を備えた半導体レーザモジュールの駆動回路および駆動方法
JP2004289481A (ja) * 2003-03-20 2004-10-14 Hitachi Ltd 光送信器
JP2007227504A (ja) * 2006-02-22 2007-09-06 Opnext Japan Inc 半導体発光装置およびこれを利用した集積型半導体光導波路素子
JP2008010484A (ja) * 2006-06-27 2008-01-17 Opnext Japan Inc 半導体光素子及び光送信モジュール
JP2010015041A (ja) * 2008-07-04 2010-01-21 Nippon Telegr & Teleph Corp <Ntt> 半導体光変調器制御装置及びその制御方法
JP2010501908A (ja) * 2007-12-04 2010-01-21 ビ−エイイ− システムズ パブリック リミテッド カンパニ− バイアス制御装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04198913A (ja) * 1990-11-29 1992-07-20 Fujitsu Ltd 電界吸収型半導体光変調器
JPH04326585A (ja) * 1991-04-25 1992-11-16 Fujitsu Ltd レーザ・光変調器集積化光源
JPH0758310A (ja) * 1993-08-09 1995-03-03 Hitachi Ltd 光集積回路
JPH09101491A (ja) * 1995-10-05 1997-04-15 Nec Corp 半導体マッハツェンダ変調装置およびその製造方法
JP2004061556A (ja) * 2002-07-24 2004-02-26 Fujitsu Ltd 電界吸収型光変調器を備えた半導体レーザモジュールの駆動回路および駆動方法
JP2004289481A (ja) * 2003-03-20 2004-10-14 Hitachi Ltd 光送信器
JP2007227504A (ja) * 2006-02-22 2007-09-06 Opnext Japan Inc 半導体発光装置およびこれを利用した集積型半導体光導波路素子
JP2008010484A (ja) * 2006-06-27 2008-01-17 Opnext Japan Inc 半導体光素子及び光送信モジュール
JP2010501908A (ja) * 2007-12-04 2010-01-21 ビ−エイイ− システムズ パブリック リミテッド カンパニ− バイアス制御装置
JP2010015041A (ja) * 2008-07-04 2010-01-21 Nippon Telegr & Teleph Corp <Ntt> 半導体光変調器制御装置及びその制御方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019128597A (ja) * 2018-01-19 2019-08-01 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツングＲｏｂｅｒｔ Ｂｏｓｃｈ Ｇｍｂｈ 電気光学移相器のための温度フィードバック
JP7537860B2 (ja) 2018-01-19 2024-08-21 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング 電気光学移相器のための温度フィードバック
CN109613510A (zh) * 2019-01-21 2019-04-12 杭州光预科技有限公司 用于小目标探测或实时跟踪成像的微波光子雷达实现方法及系统

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