JP2012054475A - 基板処理装置及び半導体装置の製造方法 - Google Patents
基板処理装置及び半導体装置の製造方法 Download PDFInfo
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- 229910052759 nickel Inorganic materials 0.000 description 1
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- 229910052701 rubidium Inorganic materials 0.000 description 1
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- 150000003376 silicon Chemical class 0.000 description 1
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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- 239000010937 tungsten Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- Plasma Technology (AREA)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010197081A JP2012054475A (ja) | 2010-09-02 | 2010-09-02 | 基板処理装置及び半導体装置の製造方法 |
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| JP2010197081A JP2012054475A (ja) | 2010-09-02 | 2010-09-02 | 基板処理装置及び半導体装置の製造方法 |
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| Publication Number | Publication Date |
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| JP2012054475A true JP2012054475A (ja) | 2012-03-15 |
| JP2012054475A5 JP2012054475A5 (enExample) | 2013-10-17 |
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| JP2010197081A Pending JP2012054475A (ja) | 2010-09-02 | 2010-09-02 | 基板処理装置及び半導体装置の製造方法 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20150036768A (ko) * | 2012-08-01 | 2015-04-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 원격 플라즈마 소스를 이용한 저온에서의 선택적 산화를 위한 장치 및 방법 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1083990A (ja) * | 1996-09-06 | 1998-03-31 | Fujitsu Ltd | 半導体装置の製造方法 |
| WO2005059988A1 (ja) * | 2003-12-18 | 2005-06-30 | Tokyo Electron Limited | 成膜方法 |
| WO2006016642A1 (ja) * | 2004-08-13 | 2006-02-16 | Tokyo Electron Limited | 半導体装置の製造方法およびプラズマ酸化処理方法 |
| JP2007221058A (ja) * | 2006-02-20 | 2007-08-30 | Toshiba Corp | 半導体装置の製造方法 |
| JP2009177191A (ja) * | 2005-03-16 | 2009-08-06 | Hitachi Kokusai Electric Inc | 基板処理方法及び基板処理装置 |
| JP2010118489A (ja) * | 2008-11-13 | 2010-05-27 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法 |
-
2010
- 2010-09-02 JP JP2010197081A patent/JP2012054475A/ja active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1083990A (ja) * | 1996-09-06 | 1998-03-31 | Fujitsu Ltd | 半導体装置の製造方法 |
| WO2005059988A1 (ja) * | 2003-12-18 | 2005-06-30 | Tokyo Electron Limited | 成膜方法 |
| WO2006016642A1 (ja) * | 2004-08-13 | 2006-02-16 | Tokyo Electron Limited | 半導体装置の製造方法およびプラズマ酸化処理方法 |
| JP2009177191A (ja) * | 2005-03-16 | 2009-08-06 | Hitachi Kokusai Electric Inc | 基板処理方法及び基板処理装置 |
| JP2007221058A (ja) * | 2006-02-20 | 2007-08-30 | Toshiba Corp | 半導体装置の製造方法 |
| JP2010118489A (ja) * | 2008-11-13 | 2010-05-27 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法 |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20150036768A (ko) * | 2012-08-01 | 2015-04-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 원격 플라즈마 소스를 이용한 저온에서의 선택적 산화를 위한 장치 및 방법 |
| JP2015526903A (ja) * | 2012-08-01 | 2015-09-10 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 遠隔プラズマ源を使用する低温での選択的な酸化のための装置及び方法 |
| US20160300712A1 (en) * | 2012-08-01 | 2016-10-13 | Applied Materials, Inc. | Apparatus and method for selective oxidation at lower temperature using remote plasma source |
| CN107492481A (zh) * | 2012-08-01 | 2017-12-19 | 应用材料公司 | 用于在较低温度下使用远程等离子体源进行选择性氧化的设备和方法 |
| JP2018142715A (ja) * | 2012-08-01 | 2018-09-13 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 遠隔プラズマ源を使用する低温での選択的な酸化のための装置及び方法 |
| KR102065483B1 (ko) * | 2012-08-01 | 2020-01-13 | 어플라이드 머티어리얼스, 인코포레이티드 | 원격 플라즈마 소스를 이용한 저온에서의 선택적 산화를 위한 장치 및 방법 |
| KR20200004927A (ko) * | 2012-08-01 | 2020-01-14 | 어플라이드 머티어리얼스, 인코포레이티드 | 원격 플라즈마 소스를 이용한 저온에서의 선택적 산화를 위한 장치 및 방법 |
| JP2020061555A (ja) * | 2012-08-01 | 2020-04-16 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 遠隔プラズマ源を使用する低温での選択的な酸化のための装置及び方法 |
| US10714333B2 (en) | 2012-08-01 | 2020-07-14 | Applied Materials, Inc. | Apparatus and method for selective oxidation at lower temperature using remote plasma source |
| KR102189015B1 (ko) * | 2012-08-01 | 2020-12-09 | 어플라이드 머티어리얼스, 인코포레이티드 | 원격 플라즈마 소스를 이용한 저온에서의 선택적 산화를 위한 장치 및 방법 |
| JP6993395B2 (ja) | 2012-08-01 | 2022-01-13 | アプライド マテリアルズ インコーポレイテッド | 遠隔プラズマ源を使用する低温での選択的な酸化のための装置及び方法 |
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