JP2012054475A - 基板処理装置及び半導体装置の製造方法 - Google Patents

基板処理装置及び半導体装置の製造方法 Download PDF

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JP2012054475A
JP2012054475A JP2010197081A JP2010197081A JP2012054475A JP 2012054475 A JP2012054475 A JP 2012054475A JP 2010197081 A JP2010197081 A JP 2010197081A JP 2010197081 A JP2010197081 A JP 2010197081A JP 2012054475 A JP2012054475 A JP 2012054475A
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gas
processing chamber
substrate
containing film
temperature
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JP2010197081A
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JP2012054475A5 (enExample
Inventor
Unryu Ogawa
雲龍 小川
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Kokusai Denki Electric Inc
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Hitachi Kokusai Electric Inc
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Priority to JP2010197081A priority Critical patent/JP2012054475A/ja
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  • Formation Of Insulating Films (AREA)
JP2010197081A 2010-09-02 2010-09-02 基板処理装置及び半導体装置の製造方法 Pending JP2012054475A (ja)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150036768A (ko) * 2012-08-01 2015-04-07 어플라이드 머티어리얼스, 인코포레이티드 원격 플라즈마 소스를 이용한 저온에서의 선택적 산화를 위한 장치 및 방법

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1083990A (ja) * 1996-09-06 1998-03-31 Fujitsu Ltd 半導体装置の製造方法
WO2005059988A1 (ja) * 2003-12-18 2005-06-30 Tokyo Electron Limited 成膜方法
WO2006016642A1 (ja) * 2004-08-13 2006-02-16 Tokyo Electron Limited 半導体装置の製造方法およびプラズマ酸化処理方法
JP2007221058A (ja) * 2006-02-20 2007-08-30 Toshiba Corp 半導体装置の製造方法
JP2009177191A (ja) * 2005-03-16 2009-08-06 Hitachi Kokusai Electric Inc 基板処理方法及び基板処理装置
JP2010118489A (ja) * 2008-11-13 2010-05-27 Hitachi Kokusai Electric Inc 半導体装置の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1083990A (ja) * 1996-09-06 1998-03-31 Fujitsu Ltd 半導体装置の製造方法
WO2005059988A1 (ja) * 2003-12-18 2005-06-30 Tokyo Electron Limited 成膜方法
WO2006016642A1 (ja) * 2004-08-13 2006-02-16 Tokyo Electron Limited 半導体装置の製造方法およびプラズマ酸化処理方法
JP2009177191A (ja) * 2005-03-16 2009-08-06 Hitachi Kokusai Electric Inc 基板処理方法及び基板処理装置
JP2007221058A (ja) * 2006-02-20 2007-08-30 Toshiba Corp 半導体装置の製造方法
JP2010118489A (ja) * 2008-11-13 2010-05-27 Hitachi Kokusai Electric Inc 半導体装置の製造方法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150036768A (ko) * 2012-08-01 2015-04-07 어플라이드 머티어리얼스, 인코포레이티드 원격 플라즈마 소스를 이용한 저온에서의 선택적 산화를 위한 장치 및 방법
JP2015526903A (ja) * 2012-08-01 2015-09-10 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 遠隔プラズマ源を使用する低温での選択的な酸化のための装置及び方法
US20160300712A1 (en) * 2012-08-01 2016-10-13 Applied Materials, Inc. Apparatus and method for selective oxidation at lower temperature using remote plasma source
CN107492481A (zh) * 2012-08-01 2017-12-19 应用材料公司 用于在较低温度下使用远程等离子体源进行选择性氧化的设备和方法
JP2018142715A (ja) * 2012-08-01 2018-09-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 遠隔プラズマ源を使用する低温での選択的な酸化のための装置及び方法
KR102065483B1 (ko) * 2012-08-01 2020-01-13 어플라이드 머티어리얼스, 인코포레이티드 원격 플라즈마 소스를 이용한 저온에서의 선택적 산화를 위한 장치 및 방법
KR20200004927A (ko) * 2012-08-01 2020-01-14 어플라이드 머티어리얼스, 인코포레이티드 원격 플라즈마 소스를 이용한 저온에서의 선택적 산화를 위한 장치 및 방법
JP2020061555A (ja) * 2012-08-01 2020-04-16 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 遠隔プラズマ源を使用する低温での選択的な酸化のための装置及び方法
US10714333B2 (en) 2012-08-01 2020-07-14 Applied Materials, Inc. Apparatus and method for selective oxidation at lower temperature using remote plasma source
KR102189015B1 (ko) * 2012-08-01 2020-12-09 어플라이드 머티어리얼스, 인코포레이티드 원격 플라즈마 소스를 이용한 저온에서의 선택적 산화를 위한 장치 및 방법
JP6993395B2 (ja) 2012-08-01 2022-01-13 アプライド マテリアルズ インコーポレイテッド 遠隔プラズマ源を使用する低温での選択的な酸化のための装置及び方法

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