JP2012054335A5 - - Google Patents

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Publication number
JP2012054335A5
JP2012054335A5 JP2010194455A JP2010194455A JP2012054335A5 JP 2012054335 A5 JP2012054335 A5 JP 2012054335A5 JP 2010194455 A JP2010194455 A JP 2010194455A JP 2010194455 A JP2010194455 A JP 2010194455A JP 2012054335 A5 JP2012054335 A5 JP 2012054335A5
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JP
Japan
Prior art keywords
thin film
sintered body
oxide semiconductor
semiconductor thin
indium
Prior art date
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Application number
JP2010194455A
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English (en)
Japanese (ja)
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JP2012054335A (ja
JP5081959B2 (ja
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Publication date
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Priority to JP2010194455A priority Critical patent/JP5081959B2/ja
Priority claimed from JP2010194455A external-priority patent/JP5081959B2/ja
Priority to PCT/JP2011/067133 priority patent/WO2012029455A1/ja
Priority to KR1020137007631A priority patent/KR101331293B1/ko
Priority to TW100128488A priority patent/TWI405863B/zh
Publication of JP2012054335A publication Critical patent/JP2012054335A/ja
Publication of JP2012054335A5 publication Critical patent/JP2012054335A5/ja
Application granted granted Critical
Publication of JP5081959B2 publication Critical patent/JP5081959B2/ja
Active legal-status Critical Current
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JP2010194455A 2010-08-31 2010-08-31 酸化物焼結体及び酸化物半導体薄膜 Active JP5081959B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010194455A JP5081959B2 (ja) 2010-08-31 2010-08-31 酸化物焼結体及び酸化物半導体薄膜
PCT/JP2011/067133 WO2012029455A1 (ja) 2010-08-31 2011-07-27 酸化物焼結体及び酸化物半導体薄膜
KR1020137007631A KR101331293B1 (ko) 2010-08-31 2011-07-27 산화물 소결체 및 산화물 반도체 박막
TW100128488A TWI405863B (zh) 2010-08-31 2011-08-10 Oxide sintered body and oxide semiconductor thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010194455A JP5081959B2 (ja) 2010-08-31 2010-08-31 酸化物焼結体及び酸化物半導体薄膜

Publications (3)

Publication Number Publication Date
JP2012054335A JP2012054335A (ja) 2012-03-15
JP2012054335A5 true JP2012054335A5 (https=) 2012-08-23
JP5081959B2 JP5081959B2 (ja) 2012-11-28

Family

ID=45772564

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010194455A Active JP5081959B2 (ja) 2010-08-31 2010-08-31 酸化物焼結体及び酸化物半導体薄膜

Country Status (4)

Country Link
JP (1) JP5081959B2 (https=)
KR (1) KR101331293B1 (https=)
TW (1) TWI405863B (https=)
WO (1) WO2012029455A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI507554B (zh) * 2010-12-28 2015-11-11 神戶製鋼所股份有限公司 An oxide and a sputtering target for a semiconductor layer of a thin film transistor, and a thin film transistor
KR102003077B1 (ko) * 2011-06-15 2019-07-23 스미토모덴키고교가부시키가이샤 도전성 산화물 및 그 제조 방법과 산화물 반도체막
CN102779758B (zh) * 2012-07-24 2015-07-29 复旦大学 一种以铟锌铝氧化物为沟道层的薄膜晶体管的制备方法
JP6052967B2 (ja) * 2012-08-31 2016-12-27 出光興産株式会社 スパッタリングターゲット
JP6188712B2 (ja) * 2012-11-08 2017-08-30 出光興産株式会社 スパッタリングターゲット
WO2015059938A1 (ja) * 2013-10-24 2015-04-30 Jx日鉱日石金属株式会社 酸化物焼結体、酸化物スパッタリングターゲット及び高屈折率の導電性酸化物薄膜並びに酸化物焼結体の製造方法
CN108352410B (zh) * 2015-11-25 2021-06-29 株式会社爱发科 薄膜晶体管、氧化物半导体膜以及溅射靶材

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3947575B2 (ja) * 1994-06-10 2007-07-25 Ｈｏｙａ株式会社 導電性酸化物およびそれを用いた電極
JP3589519B2 (ja) * 1995-11-30 2004-11-17 出光興産株式会社 タッチパネル
JP3881407B2 (ja) * 1996-07-31 2007-02-14 Ｈｏｙａ株式会社 導電性酸化物薄膜、この薄膜を有する物品及びその製造方法
US8461583B2 (en) * 2007-12-25 2013-06-11 Idemitsu Kosan Co., Ltd. Oxide semiconductor field effect transistor and method for manufacturing the same
US20100295042A1 (en) * 2008-01-23 2010-11-25 Idemitsu Kosan Co., Ltd. Field-effect transistor, method for manufacturing field-effect transistor, display device using field-effect transistor, and semiconductor device
JP4555358B2 (ja) * 2008-03-24 2010-09-29 富士フイルム株式会社 薄膜電界効果型トランジスタおよび表示装置
JP2009253204A (ja) * 2008-04-10 2009-10-29 Idemitsu Kosan Co Ltd 酸化物半導体を用いた電界効果型トランジスタ及びその製造方法
JP5218032B2 (ja) * 2008-12-25 2013-06-26 東ソー株式会社 透明導電膜用焼結体の製造方法

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