JP2012046781A5 - - Google Patents
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- Publication number
- JP2012046781A5 JP2012046781A5 JP2010188148A JP2010188148A JP2012046781A5 JP 2012046781 A5 JP2012046781 A5 JP 2012046781A5 JP 2010188148 A JP2010188148 A JP 2010188148A JP 2010188148 A JP2010188148 A JP 2010188148A JP 2012046781 A5 JP2012046781 A5 JP 2012046781A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- copper plating
- polytetrafluoroethylene
- treating
- frequency circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000000758 substrate Substances 0.000 claims 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 8
- 229910052802 copper Inorganic materials 0.000 claims 8
- 239000010949 copper Substances 0.000 claims 8
- 238000007747 plating Methods 0.000 claims 8
- -1 polytetrafluoroethylene Polymers 0.000 claims 5
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims 4
- 239000004810 polytetrafluoroethylene Substances 0.000 claims 4
- 238000000034 method Methods 0.000 claims 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 3
- 239000000243 solution Substances 0.000 claims 3
- 239000007864 aqueous solution Substances 0.000 claims 2
- 239000007822 coupling agent Substances 0.000 claims 2
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical class [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 229910021626 Tin(II) chloride Inorganic materials 0.000 claims 1
- 230000003213 activating effect Effects 0.000 claims 1
- 239000003054 catalyst Substances 0.000 claims 1
- 238000007772 electroless plating Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 239000001307 helium Substances 0.000 claims 1
- 229910052734 helium Inorganic materials 0.000 claims 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 1
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical group CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 claims 1
- 150000002940 palladium Chemical class 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 239000002094 self assembled monolayer Substances 0.000 claims 1
- 239000013545 self-assembled monolayer Substances 0.000 claims 1
- 230000001235 sensitizing effect Effects 0.000 claims 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010188148A JP2012046781A (ja) | 2010-08-25 | 2010-08-25 | 高周波回路用ポリテトラフルオロエチレン基板の銅メッキ方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010188148A JP2012046781A (ja) | 2010-08-25 | 2010-08-25 | 高周波回路用ポリテトラフルオロエチレン基板の銅メッキ方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012046781A JP2012046781A (ja) | 2012-03-08 |
JP2012046781A5 true JP2012046781A5 (enrdf_load_stackoverflow) | 2013-08-29 |
Family
ID=45901966
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010188148A Pending JP2012046781A (ja) | 2010-08-25 | 2010-08-25 | 高周波回路用ポリテトラフルオロエチレン基板の銅メッキ方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2012046781A (enrdf_load_stackoverflow) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3056343B1 (en) * | 2013-10-11 | 2020-05-06 | Sumitomo Electric Printed Circuits, Inc. | Fluororesin base material, printed wiring board, and circuit module |
JP2015122448A (ja) * | 2013-12-24 | 2015-07-02 | 住友電工プリントサーキット株式会社 | フッ素樹脂基材、プリント配線板、生体情報測定デバイス及び人工臓器 |
CN106567114A (zh) * | 2016-11-02 | 2017-04-19 | 华南理工大学 | 一种abs塑料表面喷涂活化的电镀方法 |
JP6925814B2 (ja) * | 2017-02-02 | 2021-08-25 | 株式会社電子技研 | 樹脂および樹脂の製造方法 |
WO2018147205A1 (ja) * | 2017-02-13 | 2018-08-16 | 東洋炭素株式会社 | めっきの前処理方法、めっき方法、めっき前処理物及びめっき物 |
JP7481683B2 (ja) | 2020-07-27 | 2024-05-13 | ウシオ電機株式会社 | フッ素樹脂の表面改質方法、表面改質されたフッ素樹脂の製造方法、及び接合方法 |
CN113923893B (zh) * | 2021-09-23 | 2023-10-20 | 华中科技大学 | 一种大气压下等离子体容性耦合放电镀铜的装置及方法 |
JP2023145402A (ja) * | 2022-03-28 | 2023-10-11 | 国立大学法人岩手大学 | 積層体の製造方法、積層体、プリント回路、デバイス回路、および電気電子機器 |
CN115119393B (zh) * | 2022-06-30 | 2024-12-03 | 河北光兴半导体技术有限公司 | 用于化学镀铜的自组装图案化陶瓷基板及其制备方法和应用 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5696207A (en) * | 1994-12-09 | 1997-12-09 | Geo-Centers, Inc. | Fluroropolymeric substrates with metallized surfaces and methods for producing the same |
JP2007150221A (ja) * | 2005-10-27 | 2007-06-14 | Fujitsu Ltd | 多層回路基板およびその製造方法 |
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2010
- 2010-08-25 JP JP2010188148A patent/JP2012046781A/ja active Pending