JP2012028819A - 半導体発光装置 - Google Patents
半導体発光装置 Download PDFInfo
- Publication number
- JP2012028819A JP2012028819A JP2011243112A JP2011243112A JP2012028819A JP 2012028819 A JP2012028819 A JP 2012028819A JP 2011243112 A JP2011243112 A JP 2011243112A JP 2011243112 A JP2011243112 A JP 2011243112A JP 2012028819 A JP2012028819 A JP 2012028819A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- insulating film
- semiconductor
- light emitting
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 133
- 229920005989 resin Polymers 0.000 claims description 15
- 239000011347 resin Substances 0.000 claims description 15
- 150000004767 nitrides Chemical group 0.000 claims description 2
- 238000000926 separation method Methods 0.000 description 57
- 239000000758 substrate Substances 0.000 description 53
- 239000002184 metal Substances 0.000 description 32
- 229910052751 metal Inorganic materials 0.000 description 32
- 239000007789 gas Substances 0.000 description 24
- 238000000034 method Methods 0.000 description 18
- 238000000608 laser ablation Methods 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 8
- 238000000605 extraction Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000012071 phase Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000002161 passivation Methods 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920001692 polycarbonate urethane Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- -1 and cracks Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Images
Abstract
【解決手段】実施形態によれば、半導体発光装置は、半導体層と、p側電極と、n側電極と、絶縁膜と、p側コンタクト部と、n側コンタクト部と、p側配線層と、n側配線層とを備えている。半導体層は、第1の面と、その反対側の第2の面と、発光層とを有する。絶縁膜は、半導体層に比べて柔軟性があり、半導体層の第2の面及び第1の面から続く側面に設けられている。p側配線層は、絶縁膜上に設けられ、p側コンタクト部を介してp側電極と接続されている。n側配線層は、絶縁膜上に設けられ、n側コンタクト部を介してn側電極と接続されている。
【選択図】図2
Description
分離溝31には、絶縁膜15が充填されていることが好ましいが、充填されていなくとも、基板1の主面上で半導体層12aの周辺近傍に絶縁膜15が設けられていれば、上記の屈折率差によるレーザ光Lの波面屈曲は抑えられ、強度分布が安定化し剥離条件が安定化しやすいという効果を得られる。
このとき、重なったレーザ光Lの部分には、絶縁膜15が設けられているので、分離溝31が空洞になっているものに比べて、屈折率差によるレーザ光Lの波面屈曲は抑えられ、強度分布が安定化し剥離条件が安定化しやすいという効果が得られる。
Claims (5)
- 第1の面と、その反対側の第2の面と、発光層とを有する半導体層と、
前記半導体層における前記発光層が設けられた部分の前記第2の面に設けられたp側電極と、
前記半導体層における前記発光層が設けられていない部分の前記第2の面に設けられたn側電極と、
前記半導体層に比べて柔軟性があり、前記半導体層の前記第2の面及び前記第1の面から続く側面に設けられ、前記p側電極に達する第1の開口と前記n側電極に達する第2の開口とを有する絶縁膜と、
前記第1の開口内に設けられ、前記p側電極に達するp側コンタクト部と、
前記第2の開口内に設けられ、前記n側電極に達するn側コンタクト部と、
前記絶縁膜上に設けられ、前記p側コンタクト部を介して前記p側電極と接続されたp側配線層と、
前記絶縁膜上に設けられ、前記n側コンタクト部を介して前記n側電極と接続されたn側配線層と、
を備えたことを特徴とする半導体発光装置。 - 前記絶縁膜は、樹脂であることを特徴とする請求項1記載の半導体発光装置。
- 前記半導体層は窒化物系半導体であることを特徴とする請求項1または2に記載の半導体発光装置。
- 前記半導体層の前記側面に設けられた前記絶縁膜の前記半導体層の前記第1の面側の端面は、前記半導体層の前記第1の面と同一平面上にあることを特徴とする請求項1〜3のいずれか1つに記載の半導体発光装置。
- 前記半導体層の平面形状は四角形であり、前記半導体層の前記側面を覆う前記絶縁膜は、前記半導体層を枠状に囲っていることを特徴とする請求項1〜4のいずれか1つに記載の半導体発光装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011243112A JP5205502B2 (ja) | 2011-11-07 | 2011-11-07 | 半導体発光装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011243112A JP5205502B2 (ja) | 2011-11-07 | 2011-11-07 | 半導体発光装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011083916A Division JP4865101B2 (ja) | 2011-04-05 | 2011-04-05 | 半導体発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012028819A true JP2012028819A (ja) | 2012-02-09 |
JP5205502B2 JP5205502B2 (ja) | 2013-06-05 |
Family
ID=45781288
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011243112A Active JP5205502B2 (ja) | 2011-11-07 | 2011-11-07 | 半導体発光装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5205502B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9153746B2 (en) | 2012-05-28 | 2015-10-06 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and method for manufacturing same |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005123489A (ja) * | 2003-10-20 | 2005-05-12 | Nichia Chem Ind Ltd | 窒化物半導体発光素子およびその製造方法 |
JP2008140873A (ja) * | 2006-11-30 | 2008-06-19 | Toyoda Gosei Co Ltd | フリップチップ実装されたiii−v族半導体素子およびその製造方法 |
WO2009053916A1 (en) * | 2007-10-22 | 2009-04-30 | Koninklijke Philips Electronics N.V. | Robust led structure for substrate lift-off |
JP2009130237A (ja) * | 2007-11-27 | 2009-06-11 | Panasonic Corp | 発光装置 |
-
2011
- 2011-11-07 JP JP2011243112A patent/JP5205502B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005123489A (ja) * | 2003-10-20 | 2005-05-12 | Nichia Chem Ind Ltd | 窒化物半導体発光素子およびその製造方法 |
JP2008140873A (ja) * | 2006-11-30 | 2008-06-19 | Toyoda Gosei Co Ltd | フリップチップ実装されたiii−v族半導体素子およびその製造方法 |
WO2009053916A1 (en) * | 2007-10-22 | 2009-04-30 | Koninklijke Philips Electronics N.V. | Robust led structure for substrate lift-off |
JP2009130237A (ja) * | 2007-11-27 | 2009-06-11 | Panasonic Corp | 発光装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9153746B2 (en) | 2012-05-28 | 2015-10-06 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and method for manufacturing same |
Also Published As
Publication number | Publication date |
---|---|
JP5205502B2 (ja) | 2013-06-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4686625B2 (ja) | 半導体発光装置の製造方法 | |
US8350285B2 (en) | Semiconductor light-emitting device and method for manufacturing same | |
US8319246B2 (en) | Semiconductor device and method for manufacturing same | |
US8987020B2 (en) | Semiconductor light-emitting device and method for manufacturing same | |
US20110073890A1 (en) | Method for manufacturing semiconductor light-emitting device and semiconductor light emitting device | |
JP2012015486A (ja) | 発光装置の製造方法及び発光装置 | |
JP5982179B2 (ja) | 半導体発光装置およびその製造方法 | |
JP6072192B2 (ja) | 半導体発光装置、半導体発光装置の製造方法、発光装置の製造方法 | |
JP2013042191A (ja) | 半導体発光装置 | |
JP4865101B2 (ja) | 半導体発光装置 | |
JP5205502B2 (ja) | 半導体発光装置 | |
JP5834109B2 (ja) | 半導体発光装置、半導体発光装置の製造方法、発光装置の製造方法 | |
JP4719323B2 (ja) | 半導体発光装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20111107 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20121011 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121023 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121225 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130125 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130218 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 5205502 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160222 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |