JP2012028620A - Solid state imaging apparatus, and method for manufacturing the same, and electronic device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a solid state imaging apparatus capable of suppressing malfunction of signal processing of a solid state imaging element, while reducing failure that occurs at four corners of a picked-up image.SOLUTION: In a solid state imaging apparatus 10, an area located at a more inner side than an adhesion part 25 of a solid state imaging element 22 is curved towards a wiring substrate 21, while an area other than the above area is flat and an area where a light-receiving part 22a is formed is partially curved.

Description

  The present invention relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus that can suppress malfunction of signal processing of a solid-state imaging device while alleviating problems that occur at four corners of a captured image.

  Solid-state imaging devices (camera modules) are mounted on various electronic devices such as mobile phones with cameras. In a solid-state imaging device, a solid-state imaging device, a signal processing device (DSP), a lens, a lens holder, and a lens barrel are usually integrated in a package. In recent years, solid-state imaging devices have increased in pixel count, image quality, and functionality. For this reason, even a solid-state imaging device incorporated in a camera-equipped mobile phone has come to have the same number of pixels as a dedicated imaging device such as a digital still camera.

  The conditions necessary to achieve high pixel count, high image quality, and high functionality of solid-state imaging devices are the optical center (pixel center) of the solid-state imaging device and the optical components of the optical components such as lenses. The center is arranged on the optical axis (on the same straight line), and the light receiving surface of the solid-state imaging device and the optical axis are orthogonal to each other.

  Since a solid-state imaging device mounted on a camera-equipped mobile phone is limited by a mounting space, the lens configuration is simple and the focal length is short. For this reason, the pixel center and the optical center of the lens are easily arranged on the optical axis, and the optical axis is easily arranged perpendicular to the light receiving surface. That is, the above condition is easily satisfied.

  However, a normal solid-state image sensor has a flat plate shape. For this reason, even if the above-mentioned conditions are satisfied, simply considering, the distance from the center of the lens to the pixel center of the solid-state image sensor and the distance from the center of the lens to the four corners on the pixel of the solid-state image sensor are Different. As a result, when focusing on the pixel center of the solid-state imaging device, the pixel center and its surroundings are in focus, but the portion away from the pixel center is out of focus. Furthermore, the straight line connecting the center of the lens and the center of the pixel is perpendicular (perpendicular) to the light receiving surface (pixel plane) of the solid-state imaging device, but deviates from the right angle as the distance from the pixel center increases. In other words, the light rays emitted from the lens are incident from the right angle, particularly at the four corners on the pixel. Therefore, as shown in FIG. 16, an image picked up by a flat solid-state image pickup device has blurring and a phenomenon that the image becomes dark (shading) particularly at the four corners (shaded portions in the drawing). That is, there is a problem that the image deteriorates.

  This problem can be solved by combining a plurality of lenses. However, mobile devices such as mobile phones are particularly required to be small and light. For this reason, since there are problems in terms of mounting space, weight, and price, it is practically difficult to combine a plurality of lenses.

  In order to solve this problem, Patent Documents 1 and 2 describe a method in which the solid-state imaging device is curved and the center of the lens and the four corners of the pixels of the solid-state imaging device are arranged on the same spherical surface. However, with the current technology, it is impossible to form a solid-state imaging device on a spherical silicon wafer. For this reason, the solid-state imaging device is curved by temporarily attaching the solid-state imaging device formed on the flat wafer to the mounting surface of the spherical substrate. FIG. 17 is a cross-sectional view illustrating a manufacturing process of the solid-state imaging device described in Patent Document 1. FIG. 18 is a cross-sectional view of the solid-state imaging device described in Patent Document 2.

  Specifically, in the method described in Patent Document 1, an adhesive 103 is first applied to the concave curved portion 102 formed on the substrate 101 as shown in FIG. Subsequently, as shown in FIG. 17B, the flat solid-state imaging element 104 that is thinly polished is disposed on the adhesive 103. Next, as shown in FIG. 17C, the extensible sheet 105 is disposed on the substrate 101 or the concave curved portion 102. Further, an O-ring 106 is disposed on the extensible sheet 105 on the substrate 101, and a pressure member 107 is disposed on the O-ring 106. Subsequently, as shown in FIG. 17D, when high-pressure air is introduced into the closed space 108 sealed by the O-ring 106 through the gas introduction hole 109 formed in the pressurizing member 107, the pressure in the closed space 108 is increased. Rises. Thereby, the extensible sheet 105 presses the solid-state image sensor 104 against the concave curved portion 102. As a result, the solid-state imaging device 104 is curved along the concave curved portion 102 and bonded to the substrate 101.

  On the other hand, in the method described in Patent Document 2, as shown in FIG. 18, an adhesive (not shown) is applied to the curved surface R provided on the bottom of the substrate 201, and then a flat solid-state imaging device 202 is disposed. To do. Then, the gap portion between the solid-state imaging device 202 and the curved surface R is decompressed through the suction hole 203 formed in the bottom portion of the substrate 201. As a result, the solid-state imaging device 202 is curved along the curved surface R and bonded to the substrate 201.

  Since the solid-state imaging device is a semiconductor chip, there is a hard image. However, when polished to the order of several tens of microns, it becomes quite flexible. Semiconductor polishing techniques have been established and put into practical use. A typical example of practical use is an IC card. An IC card has an IC chip embedded in a plastic card having a thickness of about 0.76 mm, and the thickness of the IC chip is about several tens to 200 μm. Actually, the IC chip is reinforced by increasing the thickness of the printed board by increasing the thickness of the IC chip or by increasing the rigidity by providing a reinforcing plate or the like. The IC chip is polished to a certain thickness (thinness) using a polishing apparatus. However, during polishing, a polishing scratch having a depth of several μm is generated, and a crack is generated from the polishing scratch. Therefore, a method for eliminating the polishing scratches by etching with a chemical or the like is also being studied.

Japanese Patent Laying-Open No. 2005-45151 (published February 17, 2005) JP 2003-243635 A (released August 29, 2003) JP 2008-300695 A (released on December 11, 2008)

  However, the solid-state imaging devices of Patent Documents 1 and 2 have a problem that malfunction occurs in signal processing of the solid-state imaging device.

  Specifically, in the methods described in Patent Documents 1 and 2, the entire solid-state imaging devices 104 and 202 are curved. For this reason, as shown in FIG. 18, the wire 204 that connects the solid-state imaging device 202 and the substrate 201 needs to be wired on the curved surface of the solid-state imaging device 202. For this reason, there is a possibility that the bonding alignment is insufficient or the bonding strength is insufficient. As a result, the reliability of electrical connection between the substrate 201 and the solid-state imaging device 202 is lowered. That is, malfunction is likely to occur in the signal processing of the solid-state imaging devices 104 and 202.

  Further, although not shown in FIGS. 17 and 18, a peripheral circuit is formed around the solid-state imaging devices 104 and 202. For this reason, if the entire solid-state imaging devices 104 and 202 are bent, the entire solid-state imaging device 104 and 202 are also bent including the peripheral circuit portion. The peripheral circuit is, for example, a circuit that amplifies an electric signal from the solid-state image sensor 104 or 202, a DSP that controls the operation of the solid-state image sensor 104 or 202, and is more complicated than the light receiving unit of the solid-state image sensor 104 or 202. It is a simple circuit. For this reason, if the whole solid-state image sensor 104,202 is curved, a malfunction will arise in a peripheral circuit and malfunction will occur in the signal processing of the solid-state image sensor 104,202.

  In the method described in Patent Document 2, since suction is performed from the suction hole 203, stress is easily applied to the portion of the back surface of the solid-state imaging device 202 that contacts the suction hole 203 during suction. As a result, there also arises a problem that the solid-state imaging device 202 is easily damaged.

  As described above, although the solid-state imaging devices of Patent Documents 1 and 2 can suppress blurring and shading by curving the solid-state imaging elements 104 and 202, they do not prevent malfunction of signal processing of the solid-state imaging elements 104 and 202. Can not.

  The present invention has been made in view of the above-described conventional problems, and an object of the present invention is to suppress malfunction of signal processing of a solid-state image sensor while alleviating a problem occurring at four corners of a captured image. An object of the present invention is to provide a solid-state imaging device, a manufacturing method thereof, and an electronic apparatus.

  In order to solve the above problems, a solid-state image pickup device according to the present invention is mounted on a wiring board and the wiring board, and has a solid-state imaging device having an electrode portion for electrical connection with the wiring board. And a light-transmitting member bonded through the bonding portion so that a gap is formed between the bonding portion formed around the light-receiving portion of the solid-state imaging device and the light-receiving portion. In the solid-state imaging device including the lid, the electrode unit is disposed outside the bonding unit, and the solid-state imaging element has a region inside the bonding unit that is curved toward the wiring board side. The region in which the electrode portion is formed is flat.

  According to said structure, the adhesion part which adhere | attaches a solid-state image sensor and a translucent cover part is formed in the circumference | surroundings of the light-receiving part of a solid-state image sensor. Furthermore, a region inside the bonding portion of the solid-state imaging element is curved toward the wiring board side to form a curved portion. As a result, it is possible to alleviate problems (such as blurring and shading) that occur at the four corners of the captured image.

  Furthermore, according to said structure, the area | region in which the electrode part of the solid-state image sensor was formed is not curved and is flat. For this reason, a solid-state image sensor and a wiring board are reliably electrically connected. Thereby, since the connection reliability of a solid-state image sensor and a wiring board increases, the malfunction of the signal processing of a solid-state image sensor can be suppressed.

  Therefore, according to the present invention, by partially curving the region in which the light receiving portion of the solid-state image sensor is formed, the signal processing error of the solid-state image sensor can be reduced while alleviating the problems that occur at the four corners of the captured image. The operation can be suppressed.

  In the solid-state imaging device according to the present invention, a signal processing unit that performs signal processing of the solid-state imaging device is formed on the solid-state imaging device, and an area on the solid-state imaging device in which the signal processing unit is formed is It may be flat.

  According to said structure, the signal processing part which performs the signal processing of a solid-state image sensor is formed on the solid-state image sensor. Furthermore, the region on the solid-state imaging device where the signal processing unit is formed is not curved and is flat. Thereby, a problem does not arise in a signal processing part because a solid-state image sensor curves. Accordingly, malfunctions that occur in signal processing of the solid-state imaging device can be reliably suppressed.

  In the solid-state imaging device according to the present invention, it is preferable that a concave portion is formed on the mounting surface of the solid-state imaging element on the wiring board, and a region inside the adhesive portion is curved along the concave portion. .

  According to said structure, the light-receiving part of a solid-state image sensor is curving along the recessed part formed in the solid-state image sensor mounting surface of a wiring board. As a result, the bulge of the solid-state image sensor matches the depth of the recess, and the curved portion of the solid-state image sensor closely contacts the recess of the wiring board. Therefore, the solid-state image sensor is reliably mounted on the wiring board.

  In the solid-state imaging device according to the present invention, a groove that leads from the concave portion to the outside may be formed in the wiring board.

  According to said structure, the groove | channel which connects the recessed part formed in the wiring board and the exterior is formed in the wiring board. Thereby, by sucking through the groove, the light receiving portion of the solid-state imaging device can be bent, and the curved portion of the solid-state imaging device and the concave portion of the wiring board can be reliably adhered.

  In the solid-state imaging device according to the present invention, it is preferable that when the light-receiving surface of the solid-state imaging element is viewed in plan, the light-receiving portion is inscribed in the recess and the adhesive portion is in contact with the recess.

  According to said structure, only the light-receiving part of a solid-state image sensor curves along the recessed part of a wiring board. Thereby, since only the area | region which should be curved of a solid-state image sensor is curved, the malfunction of the signal processing part (peripheral circuit) produced when the whole solid-state image sensor is curved can be suppressed.

  In the solid-state imaging device according to the present invention, the depth of the recess may be 15 μm or more and 30 μm or less.

  According to said structure, since the depth of the recessed part formed in the wiring board is 15 micrometers or more and 30 micrometers or less, the thickness from the back surface of a solid-state image sensor to the front-end | tip of the curved part (height of the curved part) Is 15 μm or more and 30 μm or less. Therefore, the focus can be adjusted reliably.

  In the solid-state imaging device according to the present invention, an air passage leading to the outside from a gap formed between the light receiving unit and the translucent lid may be formed in the bonding unit.

  According to said structure, the airflow path formed in the adhesion part has connected the space | gap between a light-receiving part and a translucent cover part, and the exterior. Thereby, a solid-state image sensor can be curved by putting air in a space | gap through this ventilation path.

  In the solid-state imaging device according to the present invention, both the mounting surface of the solid-state imaging device on the wiring board and the back surface of the solid-state imaging device mounted on the mounting surface may be flat.

  According to said structure, since the mounting surface of the solid-state image sensor in a wiring board is a plane, the special process with respect to a wiring board, such as forming a recessed part, is unnecessary. Therefore, the shape of the wiring board can be simplified. In addition, since the wiring board and the solid-state imaging element are brought into close contact with each other, they can be securely attached.

  In the solid-state imaging device according to the present invention, it is preferable that a thickness of the solid-state imaging element is 50 μm or more and 100 μm or less.

  According to said structure, since thickness other than the curved part of a solid-state image sensor is 50 micrometers or more and 100 micrometers or less, a solid-state image sensor can be curved smoothly.

  In order to solve the above-described problem, a method for manufacturing a solid-state imaging device according to the present invention is opposed to the light-receiving unit and bonded to the light-receiving unit via an adhesive portion formed around the light-receiving unit of the solid-state imaging element. A light-transmitting lid is bonded so that a gap is formed between them, and a solid-state imaging device in which an electrode part for electrical connection with the wiring board is arranged outside the bonding part is formed on the wiring board. The method for manufacturing a mounted solid-state imaging device includes a step of pressurizing the inside of the gap and curving an area inside the bonding portion in the solid-state imaging element to the wiring board side.

  According to the above method, since the inside of the gap formed between the light receiving part and the translucent lid part is pressurized, the solid-state image pickup device 22 is pushed by the pressure in the gap to the wiring board 21 side. Swell. On the other hand, since the electrode part is disposed outside the adhesive part, the region where the electrode part is formed by pressurization in the gap is not curved and is flat. Thereby, the area | region in which the light-receiving part of the solid-state image sensor was formed can be partially curved. Therefore, it is possible to manufacture a solid-state imaging device that can suppress malfunctions in signal processing of the solid-state imaging device while alleviating problems that occur at the four corners of the captured image.

  In the method for manufacturing a solid-state imaging device according to the present invention, the inside of the gap may be pressurized by exposing the solid-state imaging device to which the light-transmitting lid is bonded to a reduced pressure or vacuum condition.

  According to the above method, since the solid-state imaging device is exposed under reduced pressure or vacuum conditions, the solid-state imaging device expands due to the air pressure inside the gap. Thereby, the area | region in which the light-receiving part of the solid-state image sensor was formed can be partially curved.

  In the method for manufacturing a solid-state imaging device according to the present invention, an air passage that leads to the outside from a gap formed between the light receiving portion and the light-transmitting lid portion is formed in the adhesive portion, and the air passage passes through the air passage. You may pressurize the said inside of a space | gap by putting air in a space | gap.

  According to the above method, since air enters the gap through the air passage formed in the bonding portion, the solid-state imaging device expands due to the air pressure inside the gap. Thereby, the area | region in which the light-receiving part of the solid-state image sensor was formed can be partially curved.

  In order to solve the above-described problem, an electronic apparatus according to the present invention includes any one of the solid-state imaging devices. Therefore, it is possible to provide an electronic apparatus that can suppress malfunction of signal processing of the solid-state image sensor while alleviating the problems that occur at the four corners of the captured image.

  As described above, in the solid-state imaging device according to the present invention, the region inside the bonding portion in the solid-state imaging element is curved toward the wiring board, and the region where the electrode portion is formed is flat. It is. Therefore, by partially curving the region where the light receiving part of the solid-state image sensor is formed, it is possible to reduce malfunctions in the signal processing of the solid-state image sensor while alleviating problems occurring at the four corners of the captured image. There is an effect that can be.

It is sectional drawing of the solid-state imaging device which concerns on this invention. It is a perspective view which shows alignment with the lens and solid-state image sensor in the solid-state imaging device of this invention. It is a top view which shows the solid-state image sensor and wiring board in the solid-state imaging device of this invention. (A) And (b) is sectional drawing which shows the wiring board in the solid-state imaging device of this invention. (A)-(d) is sectional drawing which shows the manufacturing process of the solid-state imaging device of this invention. It is a top view which shows the solid-state image sensor and wiring board in the solid-state imaging device of this invention. It is a top view which shows the relationship between the recessed part of a wiring board in FIG. 6, and the light-receiving part of a solid-state image sensor. FIG. 7 is a cross-sectional view showing a state before decompression in the manufacturing process of the solid-state imaging device of the present invention, (a) is a cross-sectional view taken along the line AA in FIG. 7A and 7B are cross-sectional views illustrating a state after decompression in the manufacturing process of the solid-state imaging device of the present invention, where FIG. 7A is a cross-sectional view taken along the line AA in FIG. 6, and FIG. In the solid-state imaging device of the present invention, it is a plan view showing a solid-state imaging device and a wiring board in which a ventilation path is formed in an adhesive portion. It is a top view which shows the relationship between the recessed part of a wiring board in FIG. 10, and the light-receiving part of a solid-state image sensor. It is a top view which shows the relationship between the recessed part of a wiring board in FIG. 10, and an adhesion part. FIG. 11 is a cross-sectional view showing a state before pressurization through a ventilation path in the manufacturing process of the solid-state imaging device of the present invention, where (a) is a cross-sectional view taken along the line AA in FIG. It is B sectional drawing. In the manufacturing process of the solid-state imaging device of this invention, it is sectional drawing which shows the state after the pressurization through a ventilation path, (a) is AA sectional drawing of FIG. 10, (b) is B--of FIG. It is B sectional drawing. (A)-(b) is sectional drawing of the solid-state imaging device of this invention provided with the solid-state image sensor by which the back surface was grind | polished. It is a top view which shows the image imaged with the conventional solid-state imaging device. (A)-(d) is sectional drawing which shows the manufacturing process of the solid-state imaging device of patent document 1. FIG. It is sectional drawing of the solid-state imaging device described in patent document 2. FIG.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

[Embodiment 1]
(Solid-state imaging device)
FIG. 1 is a cross-sectional view of the solid-state imaging device of the present embodiment. As shown in FIG. 1, in the solid-state imaging device 10, the lens unit 1 is bonded to the imaging unit 2 via an adhesive 3. For convenience of explanation, the lens unit 1 side is the upper side, and the imaging unit 2 side is the lower side.

  The lens unit 1 guides light from the outside to the imaging unit 2. As shown in FIG. 1, the lens unit 1 has a configuration in which an imaging lens 11 is held inside a hollow lens barrel 12.

  The imaging unit 2 converts the subject image formed by the lens unit 1 into an electrical signal. That is, the imaging unit 2 photoelectrically converts incident light incident from the lens unit 1. The imaging unit 2 includes a wiring substrate 21, a solid-state imaging device 22, a wire 23, a translucent lid 24, an adhesive unit 25, and a sealing resin 26. The solid-state image sensor 22 is mounted on the wiring board 21.

  The wiring board 21 takes out an electrical signal from the solid-state imaging device 22. The wiring board 21 has a patterned wiring (not shown) for electrical connection with the solid-state imaging device 22. The wiring board 21 is, for example, a printed board or a ceramic board. A recess 21 a is formed on the surface (upper surface) of the wiring substrate 21 on which the solid-state imaging device 22 is mounted.

  The solid-state imaging device 22 converts the subject image formed by the lens unit 1 into an electrical signal. The solid-state imaging element 22 is mounted on the front surface (mounting surface) of the wiring board 21. The solid-state imaging device 22 is a semiconductor substrate (for example, a silicon single crystal substrate) on which a semiconductor circuit is formed, which is formed in a rectangular shape in plan view. The solid-state imaging device 22 is, for example, a charge-coupled device (CCD) image sensor, a complementary metal-oxide semiconductor (CMOS) image sensor, or a threshold voltage modulation image sensor (VMIS).

  On the surface (upper surface) of the solid-state imaging device 22, a light receiving portion 22a in which a plurality of pixels are arranged in a matrix is formed. The light receiving unit 22a is a region that transmits light incident from the lens unit 1 (light transmission region), and is also referred to as a pixel area. The imaging surface of the imaging unit 2 is the light receiving unit 22a.

  The solid-state image sensor 22 converts the subject image formed on the light receiving unit 22a into an electrical signal and outputs the signal as an analog image signal. That is, photoelectric conversion is performed by the light receiving unit 22a. The operation of the solid-state image sensor 22 is controlled by a DSP (signal processing unit) (not shown) formed on the solid-state image sensor 22, and the image signal generated by the solid-state image sensor 22 is processed by the DSP.

  The region where the light receiving portion 22a of the solid-state imaging element 22 is formed is a curved portion that is curved toward the wiring substrate 21 on both the front surface (upper surface) and the rear surface (lower surface). The back surface of the light receiving unit 22 a is curved along the recess 21 a of the wiring substrate 21. In other words, the solid-state imaging device 22 is formed with a convex region curved in the opposite direction to the translucent lid portion 24, and the wiring substrate 21 is formed with a concave portion 21 a corresponding to the convex region. Note that an adhesive 27 is provided between the concave portion 21 a and the curved portion of the solid-state imaging device 22, and the wiring substrate 21 and the solid-state imaging device 22 are bonded by the adhesive 27.

  Bonding pads (electrode portions; not shown in FIG. 1) for electrical connection with the wiring substrate 21 are formed on the solid-state imaging element 22. The wiring board 21 and the solid-state imaging device 22 are electrically connected to each other via the wire 23 connected to the bonding pad.

  The translucent lid portion 24 is bonded onto the solid-state imaging device 22 via the bonding portion 25. The translucent lid portion 24 is disposed to face the light receiving portion 22 a of the solid-state image sensor 22 and to be spaced from the solid-state image sensor 22. That is, the translucent lid portion 24 is provided separately from the light receiving portion 22 a of the solid-state imaging element 22 and covers at least the light receiving portion 22 a of the solid-state imaging element 22. Thereby, it is possible to prevent dust from entering and adhering to the light receiving portion 22a. Further, the translucent lid portion 24 is provided apart from the lens portion 1. In the present embodiment, the area of the surface of the translucent lid 24 facing the solid-state image sensor 22 is larger than the area of the light-receiving unit 22a of the solid-state image sensor 22.

  The translucent cover part 24 is comprised from the glass and resin which have translucency, for example. An optical filter such as an infrared cut filter may be formed on the translucent lid 24 (the surface on the lens unit 1 side). Thereby, the translucent lid | cover part 24 is also provided with the function which interrupts | blocks infrared rays.

  The adhesion part 25 adheres the solid-state image sensor 22 and the translucent lid part 24. The bonding unit 25 is formed around the light receiving unit 22 a of the solid-state image sensor 22, and bonds the translucent lid 24 on the solid-state image sensor 22. As a result, the light receiving portion 22 a of the solid-state imaging element 22 is covered with the translucent lid portion 24. The adhesive part 25 can be formed, for example, by patterning in which a sheet-like adhesive is stuck on the solid-state imaging device 22 and then subjected to processing such as exposure and development by a photolithography technique. If the photolithographic technique is used, the patterning of the bonding portion 25 can be performed with high accuracy, and since the sheet-like adhesive is used, the thickness of the bonding portion 25 can be made uniform. Thereby, the translucent cover part 24 can be adhere | attached with respect to the light-receiving part 22a of the solid-state image sensor 22 with high precision.

  The sealing resin 26 seals the imaging unit 2 so as not to block the optical path. That is, the solid-state imaging device 10 of this embodiment has a so-called CSP (Chip Scale Package) structure in which each member on the wiring board 21 is sealed with the sealing resin 26.

  Such a solid-state imaging device 10 takes in external light from the lens unit 1 to the solid-state imaging element 22 through the translucent lid 24. The captured light is guided to the light receiving unit 22a of the solid-state imaging device 22, and a subject image is formed on the light receiving unit 22a. The solid-state image sensor 22 converts the subject image into an electrical signal. In the imaging unit 2, various processes (image processing and the like) are performed on the converted electrical signal.

(Features and effects of the solid-state imaging device 10)
FIG. 2 is a perspective view showing an alignment state of the lens 11 and the solid-state imaging element 22 in the solid-state imaging device 10. In the solid-state imaging device 10, in order to realize higher pixels, higher image quality, and higher functionality, the center (pixel center) 22c of the light receiving unit 22a of the solid-state imaging device 22, and the center (optical center) 11c of the lens 11 And the surface on which the light receiving portion 22a is formed (light receiving surface) and the optical axis must be orthogonal to each other. FIG. 2 shows an ideal arrangement in which the solid-state imaging device 22 and the lens 11 satisfy such a condition.

  The pixel center 22 c is an intersection of two one-dot chain lines shown on the solid-state image sensor 22. On the other hand, the center 11 c of the lens 11 is an intersection of two broken lines parallel to two one-dot chain lines on the solid-state imaging device 22. An alternate long and short dash line extending perpendicularly from the center of the lens 11 to the solid-state imaging device 22 is the optical axis. In FIG. 2, the center of the light receiving unit 22a and the center of the lens 11 are arranged on the optical axis. Moreover, the optical axis is perpendicular to the solid-state image sensor 22 (light receiving unit 22a).

  However, even when the above-described conditions are satisfied, if the light receiving unit 22a is a flat surface, simply considering the distance from the center 11c of the lens 11 to the pixel center 22c of the solid-state imaging device 22, and the center 11c of the lens 11 To the four corners on the light receiving part 22a of the solid-state image sensor 22 is different. Further, the straight line connecting the center 11c of the lens 11 and the pixel center 22c is perpendicular (perpendicular) to the light receiving surface (pixel plane) of the solid-state image sensor 22, but from a right angle as the distance from the pixel center 22c increases. Shift. For this reason, when focusing on the pixel center 22c of the solid-state imaging device 22, the pixel center 22c and its surroundings are in focus, while the portion away from the pixel center 22c is out of focus. Further, the light rays emitted from the lens 11 are incident from the right angle, particularly at the four corners on the light receiving portion 22a. As a result, the picked-up image has out-of-focus and a phenomenon that the image becomes dark (shading) particularly at the four corners of the image (see FIG. 16). That is, there is a problem that the image deteriorates.

  Furthermore, as in Patent Documents 1 and 2, if the entire solid-state imaging device 104 or 202 is curved, it may be necessary to wire in a curved surface, or the peripheral circuit (signal processing unit) may be curved. For this reason, malfunction is likely to occur in the signal processing of the solid-state imaging devices 104 and 202.

  Therefore, as shown in FIG. 1, in the solid-state imaging device 10 of this embodiment, the solid-state imaging element 22 is partially curved toward the wiring board 21. Specifically, a region inside the bonding portion 25 of the solid-state imaging element 22 is curved, and other regions are not curved and are flat.

  As described above, in the solid-state imaging device 10, a region inside the bonding portion 25 of the solid-state imaging element 22 is curved toward the wiring board 21 to form a curved portion. As a result, it is possible to alleviate problems (such as blurring and shading) that occur at the four corners of the image captured by the solid-state imaging device 10.

  Furthermore, the region where the electrode portion of the solid-state imaging device 22 to which the wire 23 is connected is flat and not curved. For this reason, the solid-state image sensor 22 and the wiring board 21 are reliably electrically connected. Thereby, since the connection reliability of the solid-state image sensor 22 and the wiring board 21 increases, malfunction of signal processing of the solid-state image sensor 22 can be suppressed.

  In the solid-state imaging device 10, a peripheral circuit such as a DSP that performs signal processing of the solid-state imaging element 22 is formed on the solid-state imaging element 22. Furthermore, the region on the solid-state imaging device 22 where the peripheral circuit is formed is not curved and is flat. As a result, the solid-state image pickup device 22 is not bent, so that there is no problem in the peripheral circuit. Therefore, malfunctions that occur in signal processing of the solid-state image sensor 22 can be reliably suppressed.

  Further, in the solid-state imaging device 10, the light receiving portion 22 a of the solid-state imaging element 22 is curved along the recess 21 a formed on the solid-state imaging element mounting surface of the wiring board 21. Thereby, the bulge of the solid-state image sensor 22 matches the depth of the recess 21 a, and the curved portion of the solid-state image sensor 22 is in close contact with the recess 21 a of the wiring substrate 21. Therefore, the solid-state imaging element 22 is reliably mounted on the wiring board 21.

  FIG. 3 is a plan view showing the solid-state imaging element 22 and the wiring board 21 in the solid-state imaging device 10. In other words, FIG. 3 is a plan view showing the relationship between the light receiving portion 22a, the bonding portion 25, and the concave portion 21a. As shown in FIG. 3, the bonding portion 25 is formed so as to surround (enclose) the light receiving portion 22a. Thereby, when the translucent lid portion 24 is bonded to the bonding portion 25, the light receiving portion 22 a is sealed in the space formed by the translucent lid portion 24 and the bonding portion 25. The light receiving portion 22a is inscribed in the recess 21a of the wiring substrate 21, and the adhesive portion 25 is in contact with the recess 21a. As described above, in the solid-state imaging device 10, when the light-receiving surface of the solid-state imaging element 22 is viewed in plan, the light-receiving portion 22a is inscribed in the recess 21a, and the adhesive portion 25 is in contact with the recess 21a. For this reason, only the light receiving portion 22 a of the solid-state imaging element 22 is curved along the concave portion 21 a of the wiring substrate 21. Thereby, since only the region to be curved of the solid-state image sensor 22 is curved, it is possible to suppress a problem of the signal processing unit (peripheral circuit) that occurs when the entire solid-state image sensor 22 is curved.

  As shown in FIG. 3, a bonding pad (as a terminal for connecting the solid-state image pickup device 22 and the wiring board 21 or the signal processing unit (peripheral circuit) is provided outside the bonding portion 25 of the solid-state image pickup device 22. A plurality of electrode portions 28 are provided. The region where the bonding pad 28 is formed is flat and not curved.

  4A and 4B are cross-sectional views showing the wiring board 21 in the solid-state imaging device 10. What is necessary is just to set the depth of the recessed part 21a formed in the wiring board 21 according to the thickness of the curved part of a solid-state image sensor, and it is not specifically limited. The depth of the recess 21a is preferably set in consideration of the focus adjustment of the solid-state imaging device 10. That is, it is preferable to set based on the amount of movement of the lens 11 when the solid-state imaging device 10 is out of focus from the focused position during focus adjustment. For example, as shown in FIGS. 4A and 4B, assuming that the in-focus position is X and the out-of-focus position is ± Y, the depth of the recess 21a is X or ( It is preferable to set 2X (2Y) as in b). Specifically, the depth of the recess 21a is preferably about ± 15 μm or more and 30 μm or less (± 15 μm of just focus) from the focused position. Thereby, the thickness (height) from the back surface of the solid-state imaging device 22 to the tip of the curved portion is also 15 μm or more and 30 μm or less. Therefore, the focus can be adjusted reliably.

  Moreover, it is preferable that the recessed part 21a of the wiring board 21 is formed avoiding the wiring (wiring pattern) which is not illustrated. As a result, the region where the wiring is formed is not curved and becomes flat, so that it is possible to prevent wiring defects such as disconnection.

  On the other hand, the thickness of the solid-state imaging device 22 is not particularly limited, but is preferably 50 μm or more and 100 μm or less. Thereby, the solid-state image sensor 22 can be smoothly curved.

  As described above, according to the solid-state imaging device 10, by partially curving the region where the light-receiving portion 22 a of the solid-state imaging element 22 is formed, the solid-state imaging device 10 can alleviate the problems that occur at the four corners of the captured image and The malfunction of the signal processing of the image sensor 22 can be suppressed.

(Manufacturing method of the solid-state imaging device 10)
FIG. 5 is a cross-sectional view illustrating the manufacturing process of the solid-state imaging device 10. First, as shown in FIG. 5A, a wiring substrate 21 in which a recess 21 is formed and a solid-state imaging device 22 to which a translucent lid 24 is bonded via an adhesive portion 25 are prepared. The solid-state image pickup device 22 is a flat plate shape in which an ordinary package solid-state image pickup device (thickness: 100 to 200 μm) is polished to a thickness of about 50 μm. The translucent lid 24 is bonded on the solid-state image sensor 22 in the atmosphere. That is, 1 atmosphere of air is enclosed in a gap (sealed space) G between the solid-state imaging device 22 and the translucent lid 24.

  Next, as shown in FIG. 5B, an adhesive 27 is applied on the wiring board 21 so as to cover at least the recess 21a. Subsequently, the solid-state imaging element 22 is mounted (adhered) to the wiring board 21 under a reduced pressure condition or a vacuum condition. The pressure under this condition is lower than the pressure in the gap G formed between the solid-state image sensor 22 and the translucent lid 24. For this reason, the gap G expands, and the solid-state imaging device 22 and the translucent lid 24 are pushed with air at 1 atmosphere inside the gap G. The thickness of the translucent lid 24 is about 500 μm, while the solid-state image sensor 22 is polished to about 50 μm. For this reason, the solid-state image sensor 22 thinner than the translucent cover part 24 is pushed, and it swells to the wiring board 21 side. As a result, only the region inside the bonding portion 25 of the solid-state imaging element 22 is curved. Furthermore, by adjusting the pressure to such an extent that the solid-state image sensor 22 is not destroyed, the solid-state image sensor 22 is curved along the recess 21a. As a result, the curved portion of the solid-state imaging element 22 and the wiring board 21 are in close contact with each other. Therefore, the solid-state imaging element 22 is reliably mounted (adhered) on the wiring board 21 by the adhesive 27.

  Next, as shown in FIG. 5C, each member on the wiring substrate 21 is sealed with a sealing resin 26 to form a packaged imaging unit 2. Further, an adhesive 3 is applied on the imaging unit 2 to bond the imaging unit 2 and the lens unit 1 together. At this time, the pixel center (broken line part) of the solid-state image sensor 22 and the center (broken line part) of the lens 11 are matched. Thereby, the lens part 1 and the imaging part 2 can be aligned with high precision. Finally, as shown in FIG. 5D, if the adhesive 3 is cured, the solid-state imaging device 10 can be manufactured.

  5B, it is preferable to adjust the pressure so that the bulge of the solid-state imaging element 22 fits into the recess 21a of the wiring board 21. As a result, the vicinity of the light receiving portion 22a expands to the same extent as the depth of the recess 21a. When the depth of the recess 21a is 15 μm to 30 μm, the bulge of the solid-state imaging element 22 is also 15 μm to 30 μm. That is, it is ± 15 μm in a state where the lens 11 is in focus (just in focus).

  5B is a step under reduced pressure conditions or vacuum conditions, it is preferable to use a thermosetting adhesive such as a thermosetting resin as the adhesive 27. Further, when the solid-state image sensor 22 is resin-sealed, an adhesive 27 may be partially applied on the wiring substrate 21 or on the back surface of the solid-state image sensor 22. That is, the solid-state imaging element 22 may be partially bonded onto the wiring board 21 with the adhesive 27.

  As described above, the method for manufacturing the solid-state imaging device 10 uses the bulging due to the pressure in the gap G between the light receiving unit 22a and the translucent lid 24 to perform solid-state imaging along the recess 21a of the wiring board 21. The element 22 can be curved. Thereby, the area | region in which the light-receiving part 22a of the solid-state image sensor 22 was formed can be partially curved. Therefore, it is possible to manufacture the solid-state imaging device 10 that can suppress malfunctions in signal processing of the solid-state imaging element 22 while alleviating problems that occur at the four corners of the captured image.

(Another wiring board 21A)
The wiring board 21 in the solid-state imaging device 10 can be configured as follows. FIG. 6 is a plan view showing the solid-state imaging element 22 and the wiring board 21 </ b> A in the solid-state imaging device 10. FIG. 7 is a plan view showing the relationship between the concave portion 21a of the wiring board 21A and the light receiving portion 22a of the solid-state imaging element 22 in FIG. Hereinafter, the difference from the wiring board 21 will be mainly described.

  As shown in FIGS. 6 and 7, the wiring board 21 </ b> A has a groove 21 b extending from the recess 21 a to the outside of the mounting area of the solid-state imaging device 22. Other than that, the configuration is the same as that of the wiring board 21. The groove 21 functions as an air vent groove in the recess 21. 6 and 7, one groove 21b is formed, but a plurality of grooves 21b may be formed.

  8A and 8B are cross-sectional views showing a state before pressure reduction (air bleeding) in the manufacturing process of the solid-state imaging device provided with the wiring board 21A. FIG. 8A is a cross-sectional view taken along the line AA in FIG. 6 is a cross-sectional view taken along line BB in FIG. 9 is a cross-sectional view showing a state after decompression (air venting) in the manufacturing process of the solid-state imaging device provided with the wiring board 21A. FIG. 9A is a cross-sectional view taken along the line AA in FIG. 6 is a cross-sectional view taken along line BB in FIG.

  First, the end of the back surface of the solid-state imaging device 22 and the periphery of the recess 21 a of the wiring substrate 21 are bonded in advance. Next, as shown in FIGS. 8A and 8B, the pressure is reduced from the groove 21a. Thereby, the air in the recess 21a is released, and the pressure in the recess 21a is reduced. When the decompression is started, the solid-state image sensor 22 is curved, but a gap is still formed between the recess 21 a and the groove 21 b and the solid-state image sensor 22.

  On the other hand, when the pressure reduction in the recess 21a sufficiently proceeds, the solid-state image sensor 22 expands due to the air pressure inside the gap G between the solid-state image sensor 22 and the translucent lid 24. As a result, as shown in FIGS. 9A and 9B, the gaps between the recess 21a and the groove 21b and the solid-state imaging device 22 are closed. However, since the recess 21a and the gap are closed by the expansion of the solid-state imaging device 22 due to the air pressure inside the gap G, the groove 21b is not affected by the air pressure inside the gap G. For this reason, although the solid-state imaging device 22 is in close contact with the recess 21a, the solid-state imaging device 22 is not in close contact with the groove 21b. Therefore, after completion of the decompression, the groove 21b is filled with resin or adhesive, and the groove 21b is closed. In addition, since it attracts | sucks from the groove | channel 21a, as demonstrated in FIG.5 (b), it is not necessary to carry out under pressure reduction conditions or a vacuum condition.

  Thus, the wiring board 21A is formed with a groove 21b that connects the recess 21a and the outside. Thereby, by sucking through the groove 21 a, the light receiving part 22 a of the solid-state image sensor 22 can be curved, and the curved part of the solid-state image sensor 22 and the concave part 21 a of the wiring board 21 can be securely adhered.

(Another bonding part 25A)
The bonding portion 25 in the solid-state imaging device 10 can be configured as follows. In other words, the air passage 29 that leads to the outside from the gap G formed between the light receiving portion 22a and the translucent lid portion 24 may be formed in the adhesive portion 25A. The adhesive portion 25A in which such an air passage 29 is formed is already disclosed in Patent Document 3 by the applicant of the present application.

  FIG. 10 is a plan view showing the solid-state imaging device 22 and the wiring board 21A in which the ventilation path 29 is formed in the bonding portion 25A. FIG. 11 is a plan view showing the relationship between the concave portion 21a of the wiring board 21A and the light receiving portion 22a of the solid-state imaging element 22 in FIG. FIG. 12 is a plan view showing the relationship between the concave portion 21a of the wiring board 21 and the adhesive portion 25A in FIG. Below, it demonstrates centering on difference with the adhesion part 25 of FIG.

  10 and 12 is formed in a wider range than the bonding portion 25 in FIG. In addition to the same shape as the bonding part 25, the bonding part 25A is formed so that a ventilation path 29 is provided in the direction opposite to the groove 21a. The air passage 29 is formed in the adhesive portion 25A so as to communicate with the outside through a gap G formed between the light receiving portion 22a and a light-transmitting lid portion (not shown). The ventilation path 29 has a first opening end portion 29a that communicates with the gap G and a second opening end portion 29b that communicates with the outside. The translucent lid portion 24 covers the light receiving portion 22a and has a size that does not block the second opening end portion 29b.

  13 is a cross-sectional view showing a state before pressurization through the air passage 29 in the manufacturing process of the solid-state imaging device in which the air passage 29 is formed, and (a) is a cross-sectional view taken along line AA in FIG. (B) is BB sectional drawing of FIG. 14 is a cross-sectional view showing a state after pressurization through the air passage 29 in the manufacturing process of the solid-state imaging device in which the air passage 29 is formed, and (a) is a cross-sectional view taken along line AA in FIG. (B) is BB sectional drawing of FIG.

  First, the end of the back surface of the solid-state imaging device 22 and the periphery of the recess 21 a of the wiring substrate 21 are bonded in advance. Next, as shown in FIGS. 13A and 13B, air is sent into the gap G through the air passage 29 to pressurize the gap G. When the pressurization is started, the solid-state image sensor 22 is curved, but a gap is still formed between the recess 21 a and the groove 21 b and the solid-state image sensor 22.

  On the other hand, when the pressurization in the gap G sufficiently proceeds, the solid-state image sensor 22 expands due to the air pressure inside the gap G formed between the solid-state image sensor 22 and the translucent lid 24. As a result, as shown in FIGS. 13A and 13B, the gap between the recess 21a and the solid-state image sensor 22 is closed. However, since the gap is closed by the expansion of the solid-state imaging device 22 due to the air pressure inside the gap G, the groove 21b is not affected by the air pressure inside the gap G. For this reason, although the solid-state imaging device 22 is in close contact with the recess 21a, the solid-state imaging device 22 is not in close contact with the groove 21b. Therefore, after completion of the decompression, the groove 21b is filled with resin or adhesive, and the groove 21b is closed. In addition, since it attracts | sucks from the groove | channel 21a, as demonstrated in (b) of FIG. Further, when the solid-state imaging device 22 swells and closes the recess 21a, the air in the recess 21a escapes from the groove 21b.

  As described above, the bonding portion 25 </ b> A is formed with the air passage 29 that leads to the outside from the gap G formed between the light receiving portion 22 a and the light-transmitting lid portion 24. Thereby, the solid-state image sensor 22 can be curved by putting air into the gap G through the air passage 29. In addition, the curved portion of the solid-state imaging element 22 and the concave portion 21a of the wiring board 21 can be reliably adhered.

  Similarly to FIGS. 8 and 9, the light receiving portion 22a of the solid-state imaging element 22 can be curved also by suction through the groove 21a. However, since the air passage 29 leading from the gap G to the outside is formed, it is necessary to pressurize the gap G through the air passage 29. Also in this case, the curved portion of the solid-state imaging element 22 and the concave portion 21a of the wiring board 21 can be reliably adhered.

(Another solid-state image sensor 22A and wiring board 21B)
The solid-state imaging element 22 in the solid-state imaging device 10 can be configured as follows. In the above description, pressure is applied to the flat solid-state image pickup element 22 to be bent, and the flat solid-state image pickup element 22 is brought into close contact with the recess 21 a formed in the wiring board 21. However, as shown in FIG. 15A, a recess 22b may be formed on the back surface (the surface mounted on the wiring board 21) of the solid-state imaging device 22A. (A)-(c) of FIG. 15 is sectional drawing which shows the manufacturing process of 10 A of solid-state imaging devices provided with 22 A of solid-state image sensors.

  As shown in FIG. 15A, a recess 22b is formed on the back surface of the solid-state imaging element 22A and is curved. Further, the surface of the solid-state imaging element 22A (the region where the light receiving portion 22a is formed) is flat. In addition, the adhesion part 25 is formed in the circumference | surroundings of the light-receiving part 22a similarly to FIG. On the other hand, the recess 21a is not formed in the wiring board 21B, and it is a flat plate.

  Next, an adhesive 27 is applied on the wiring board 21B. Subsequently, the solid-state imaging element 22A is mounted (adhered) to the wiring board 21B under a reduced pressure condition or a vacuum condition. The pressure under this condition is lower than the pressure in the gap G formed between the solid-state image sensor 22A and the translucent lid 24. For this reason, the gap G expands, and the solid-state imaging device 22 and the translucent lid 24 are pushed with air at 1 atmosphere inside the gap G. For this reason, the solid-state imaging element 22A thinner than the translucent lid portion 24 is pushed and swells toward the wiring board 21B. As a result, the region where the light receiving portion 22a that has been flat is curved, while the recess 22b is eliminated and becomes flat. That is, the back surface of the solid-state image sensor 22 becomes flat. Thereby, solid-state image sensor 22A and wiring board 21B can be pasted up in planes.

  Subsequently, as in (c) and (d) of FIG. 5, after each member on the wiring substrate 21 is sealed with the sealing resin 26, the lens unit 1 is bonded to manufacture the solid-state imaging device 10 </ b> A. can do.

  As described above, in the solid-state imaging device 10A, since the mounting surface of the solid-state imaging element 22A on the wiring board 21B is a flat surface, special processing for the wiring board 21B such as forming the recess 21a is unnecessary. Therefore, the shape of the wiring board 21B can be simplified. In addition, since the wiring board 21B and the solid-state imaging element 22A are brought into close contact with each other, they can be reliably brought into close contact with each other.

  The present invention can also be expressed as follows.

  [1] A solid-state imaging device, a translucent lid mounted via an adhesive portion formed around a light-receiving portion of the solid-state imaging device, and between the solid-state imaging device and the previous translucent lid In the solid-state imaging device provided with a wiring board on which the solid-state imaging device is mounted, the solid-state imaging device is opposite to the light-transmitting lid portion on the inner side (light-receiving portion region) from the adhesive portion. A solid-state imaging device having a convex region curved in a direction and bonded to a wiring board having a curved concave region facing the convex region via an adhesive layer.

  [2] The electrode of the solid-state imaging device and the wiring pattern of the wiring substrate are electrically connected, and the region where the electrode of the imaging device is formed and the wiring pattern of the wiring substrate are formed. The solid-state imaging device according to the above [1], wherein the area in which it is located is not curved.

  [3] The solid-state imaging device according to [2], wherein the electrode of the solid-state imaging element and the wiring pattern of the wiring board are connected by a metal wire.

  [4] The solid-state imaging device according to any one of [1] to [3], wherein the thickness of the solid-state imaging device is 100 μm or less.

  [5] The solid-state imaging device according to any one of [1] to [4], wherein the height of the convex region is about 15 to 30 μm.

  [6] A step of forming an adhesive around the light receiving portion of the solid-state imaging device, and a translucent lid portion mounted in the atmosphere via the adhesive material, between the solid-state imaging device and the translucent lid portion Forming an air gap region sealed in the tube, and by depressurizing or vacuuming the periphery of the solid-state imaging device, the inside of the bonding portion of the solid-state imaging device is curved in a direction opposite to the translucent lid portion. A step of forming the convex region, and a step of bonding via an adhesive layer on the wiring board having a curved concave region corresponding to the convex region so that the convex region and the concave region correspond to each other. A method for manufacturing a solid-state imaging device.

  [7] A step of forming an adhesive having a ventilation path (air path) around the light receiving portion of the solid-state imaging device, and a translucent lid portion is mounted via the adhesive, and the solid-state imaging device and the translucent A step of forming an air gap region communicating with the outside through the air passage between the lid portion and the air-transmitting air from the air passage to the air gap so that the inner side of the adhesive portion of the solid-state image sensor is the light-transmitting property A step of forming a convex region curved in the direction opposite to the lid and a wiring substrate having a curved concave region corresponding to the convex region so that the convex region corresponds to the concave region And a step of adhering via an adhesive layer.

  The solid-state imaging device of the present invention can be applied to various electronic devices such as camera-equipped mobile phones, digital still cameras, security cameras such as surveillance cameras and door phones.

  In addition, this invention is not limited to embodiment mentioned above, A various change is possible in the range shown to the claim. That is, embodiments obtained by combining technical means appropriately modified within the scope of the claims are also included in the technical scope of the present invention.

  The present invention can be applied to various electronic devices including a solid-state imaging device such as a camera-equipped mobile phone, a digital still camera, and a security camera such as a surveillance camera and a door phone.

DESCRIPTION OF SYMBOLS 10 Solid-state imaging device 10A Solid-state imaging device 21 Wiring board 21A Wiring board 21B Wiring board 21a Recess 22 Solid-state imaging element 22A Solid-state imaging element 22a Light-receiving part 24 Translucent cover part 25 Adhesive part 25A Adhesive part 28 Bonding pad (electrode part)
29 Ventilation path G Gap

Claims (13)

A wiring board, a solid-state imaging device mounted on the wiring board and having an electrode portion for electrical connection with the wiring board, and an adhesive portion formed around the light-receiving portion of the solid-state imaging element; In a solid-state imaging device including a translucent lid that is bonded via an adhesive portion so that a gap is formed between the light receiving portion and the light receiving portion.
The electrode part is disposed outside the adhesive part,
In the solid-state imaging device, a region inside the bonding portion is curved toward the wiring board, and a region where the electrode portion is formed is flat. A signal processing unit for performing signal processing of the solid-state image sensor is formed on the solid-state image sensor,
The solid-state imaging device according to claim 1, wherein a region on the solid-state imaging device in which the signal processing unit is formed is flat. A recess is formed on the mounting surface of the solid-state imaging device on the wiring board,
The solid-state imaging device according to claim 1, wherein a region inside the adhesive portion is curved along the concave portion.   The solid-state imaging device according to claim 3, wherein a groove is formed in the wiring board from the recess to the outside.   5. The solid-state imaging device according to claim 3, wherein when the light-receiving surface of the solid-state imaging element is viewed in plan, the light-receiving portion is inscribed in the recess and the adhesive portion is in contact with the recess. .   6. The solid-state imaging device according to claim 3, wherein a depth of the concave portion is 15 μm or more and 30 μm or less.   The ventilation path which leads to the exterior from the space | gap formed between the said light-receiving part and a translucent cover part is formed in the said adhesion part, The any one of Claims 1-6 characterized by the above-mentioned. Solid-state imaging device.   3. The solid-state imaging device according to claim 1, wherein a mounting surface of the solid-state imaging device on the wiring board and a back surface of the solid-state imaging device mounted on the mounting surface are both flat.   9. The solid-state imaging device according to claim 1, wherein a thickness of the solid-state imaging element is 50 μm or more and 100 μm or less. A translucent lid is bonded to the wiring substrate so that a gap is formed between the light receiving portion and the light receiving portion through an adhesive portion formed around the light receiving portion of the solid-state imaging device. In the manufacturing method of the solid-state imaging device in which the solid-state imaging device in which the electrode portion for electrical connection is arranged outside the bonding portion is mounted on the wiring board,
A method for manufacturing a solid-state imaging device, comprising the step of pressurizing the inside of the gap and bending a region inside the bonding portion in the solid-state imaging element toward the wiring board.   The method for manufacturing a solid-state imaging device according to claim 10, wherein the space is pressurized by exposing the solid-state imaging device to which the light-transmitting lid is bonded under reduced pressure or vacuum. An air passage leading to the outside from a gap formed between the light receiving part and the light-transmitting lid part is formed in the adhesive part,
The method for manufacturing a solid-state imaging device according to claim 10, wherein the inside of the gap is pressurized by putting air into the gap through the ventilation path.   The electronic device provided with the solid-state imaging device of any one of Claims 1-9.

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