JP2012023275A - Crosstalk suppression circuit board - Google Patents

Crosstalk suppression circuit board Download PDF

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JP2012023275A
JP2012023275A JP2010161535A JP2010161535A JP2012023275A JP 2012023275 A JP2012023275 A JP 2012023275A JP 2010161535 A JP2010161535 A JP 2010161535A JP 2010161535 A JP2010161535 A JP 2010161535A JP 2012023275 A JP2012023275 A JP 2012023275A
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circuit board
crosstalk
signal line
plating
insulating substrate
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JP5595153B2 (en
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Yoshinao Kato
義尚 加藤
Shunsuke Eiki
俊介 榮喜
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Meiko Electronics Co Ltd
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Meiko Electronics Co Ltd
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Abstract

PROBLEM TO BE SOLVED: To provide a crosstalk suppression circuit board which can suppress crosstalk sufficiently without inhibiting high density of the circuit board.SOLUTION: The crosstalk suppression circuit board 2 comprises an insulating substrate 4 made of resin, a ground layer located on one surface of the insulating substrate 4, and a wiring circuit 12 located on the opposite surface of the insulating substrate 4 from the ground layer 8. The wiring circuit 12 includes a signal line 16 formed in a prescribed pattern, a coating material 14 consisting of a magnetic body covering the outside surface of the signal line 16, and a protective insulation layer 18 made of resin which buries the signal line 16 and the coating material 14.

Description

本発明は、並行して配設された信号線間で生じるクロストークを抑制することができる構造を備えたクロストーク抑制回路基板に関する。   The present invention relates to a crosstalk suppressing circuit board having a structure capable of suppressing crosstalk generated between signal lines arranged in parallel.

配線パターンを形成する信号線を含む回路基板においては、信号線に信号が通るたびに信号線の周囲に磁界が生じる。ここで、2本の信号線が近接して配設されている場合、2つの磁界が互いに作用しあい、互いの信号線間で信号の結合が起こり、いわゆるクロストークが発生する。このようなクロストークが発生すると、回路に組み込まれた電子部品に動作不良を発生させることがある。   In a circuit board including a signal line forming a wiring pattern, a magnetic field is generated around the signal line every time a signal passes through the signal line. Here, when the two signal lines are arranged close to each other, the two magnetic fields act on each other, so that signal coupling occurs between the signal lines, and so-called crosstalk occurs. When such crosstalk occurs, an operation failure may occur in an electronic component incorporated in the circuit.

このクロストークは、信号線間の間隔が狭いほど、信号線の線路長が長いほど、また、信号の周波数が高いほど大きくなるため、回路基板の高密度化、大規模化、高速化にともない、クロストークの問題が顕在化する。このため、回路基板の高密度化等を図るためには、クロストーク対策が必要となっている。
ここで、クロストーク対策を施した回路基板としては、例えば、特許文献1に示すようなクロストークノイズ低減多層配線回路基板が挙げられる。
このクロストークノイズ低減多層配線回路基板は、回路基板に含まれる信号線を囲むように断面視で凹形状のグランドを配置して信号線からの信号の漏れを抑え、クロストークノイズを低減している。
This crosstalk increases as the distance between the signal lines is narrower, the signal line length is longer, and the signal frequency is higher. Accordingly, the circuit board has higher density, larger scale, and higher speed. The problem of crosstalk becomes obvious. For this reason, in order to increase the density of circuit boards and the like, it is necessary to take measures against crosstalk.
Here, as a circuit board to which measures against crosstalk are taken, for example, a crosstalk noise reduction multilayer wiring circuit board as shown in Patent Document 1 can be cited.
This multilayer circuit board that reduces crosstalk noise has a concave ground in cross-sectional view to surround the signal lines included in the circuit board to suppress signal leakage from the signal lines and reduce crosstalk noise. Yes.

特開2003−209367号公報JP 2003-209367 A

ところで、特許文献1の回路基板は、信号線のまわりを囲むように凹形状のグランドを配置するので回路基板内の構造が複雑となり、製造に手間がかかる。このため、製造コストが嵩むといった問題がある。
また、回路基板内において信号線と間隔をあけて凹形状のグランドを配置するためのスペースが必要となるので、回路基板の高密度化を進める上で限界がある。
By the way, the circuit board of Patent Document 1 has a concave ground so as to surround the signal line. Therefore, the structure in the circuit board becomes complicated, and it takes time to manufacture. For this reason, there exists a problem that manufacturing cost increases.
In addition, a space for arranging the concave ground with a space from the signal line in the circuit board is required, and there is a limit in increasing the density of the circuit board.

本発明は、上記の事情に基づいてなされたもので、その目的とするところは、簡単な構造で製造に手間がかからず、回路基板の高密度化を阻害せずにクロストークを十分に抑制することができるクロストーク抑制回路基板を提供することにある。   The present invention has been made on the basis of the above circumstances, and the object of the present invention is to provide a simple structure that does not require much time for manufacturing, and does not hinder the high density of the circuit board. An object of the present invention is to provide a crosstalk suppressing circuit board that can be suppressed.

上記目的を達成するために、本発明のクロストーク抑制回路基板は、樹脂製の絶縁基板と、前記絶縁基板の一方の面に設けられたグランド層と、前記絶縁基板の前記グランド層とは反対側の面に設けられた配線回路とを備え、前記配線回路は、所定のパターンにて形成された信号線と、前記信号線の外表面を覆う磁性体からなる被覆材と、前記信号線及び前記被覆材を埋設する樹脂製の保護絶縁層とを含むことを特徴とする(請求項1)。   In order to achieve the above object, a crosstalk suppressing circuit board according to the present invention includes a resin insulating substrate, a ground layer provided on one surface of the insulating substrate, and the ground layer of the insulating substrate opposite to the ground layer. A wiring circuit provided on a side surface, the wiring circuit comprising: a signal line formed in a predetermined pattern; a covering material made of a magnetic material covering an outer surface of the signal line; and the signal line and And a protective insulating layer made of a resin in which the covering material is embedded (Claim 1).

また、本発明のクロストーク抑制回路基板は、前記配線回路が複数積層された多層構造の積層回路を備えた構成とすることが好ましい(請求項2)。
好ましくは、前記被覆材は、Ni−Pめっきである構成とする(請求項3)。
具体的には、前記Ni−Pめっき中のPの含有量が0重量%〜15重量%である構成とすることが好ましい(請求項4)。
また、前記Ni−Pめっきは、厚さが1μm〜10μmである構成とすることが好ましい(請求項5)。
The crosstalk suppressing circuit board of the present invention preferably includes a multilayer circuit having a multilayer structure in which a plurality of the wiring circuits are stacked (claim 2).
Preferably, the covering material is Ni-P plating.
Specifically, the P content in the Ni-P plating is preferably 0 to 15% by weight (Claim 4).
Moreover, it is preferable that the Ni—P plating has a thickness of 1 μm to 10 μm.

本発明に係るクロストーク抑制回路基板によれば、信号線を覆う磁性体からなる被覆材による磁界のシールド効果が高いため、信号線からの磁界の漏れを抑制することができ、信号線間のクロストークの抑制に非常に有効である。磁性体からなる被覆材の形成には、従来用いられている方法、例えば、めっき法等を採用することができるので、被覆材は簡単に形成することができる。しかも、この被覆材は、信号線に密着しているので、回路基板に対して大幅な設計変更も不要である。このため、基板の製造コストの削減を図ることができる。   According to the crosstalk suppressing circuit board of the present invention, since the magnetic field shielding effect by the covering material made of a magnetic material covering the signal lines is high, leakage of the magnetic field from the signal lines can be suppressed, It is very effective in suppressing crosstalk. Since a conventionally used method such as a plating method can be employed for forming the coating material made of a magnetic material, the coating material can be easily formed. In addition, since the covering material is in close contact with the signal line, no significant design change is required for the circuit board. For this reason, the manufacturing cost of the substrate can be reduced.

第1の実施形態に係るクロストーク抑制回路基板を示す断面図である。It is sectional drawing which shows the crosstalk suppression circuit board concerning 1st Embodiment. 第2の実施形態に係るクロストーク抑制回路基板を示す断面図である。It is sectional drawing which shows the crosstalk suppression circuit board concerning 2nd Embodiment. 評価用基板の一部を示す斜視図である。It is a perspective view which shows a part of evaluation board | substrate. 評価用基板を示す斜視図である。It is a perspective view which shows the board | substrate for evaluation. 被覆材のリン含有量を変えたときの遠端クロストーク量の周波数特性を示すグラフである。It is a graph which shows the frequency characteristic of the far end crosstalk amount when changing phosphorus content of a coating | covering material. 被覆材の厚さを変えたときの遠端クロストーク量の周波数特性を示すグラフである。It is a graph which shows the frequency characteristic of the far end crosstalk amount when changing the thickness of a coating | covering material.

(第1の実施形態)
図1は、第1の実施形態に係るクロストーク抑制回路基板2の横断面を示している。
図1に示すように、本発明に係るクロストーク抑制回路基板2は、基材として、絶縁基板4を備えている。この絶縁基板4としては、絶縁性を有する樹脂であれば特に限定はされないが、ガラス繊維を補強材としてエポキシ樹脂に含浸させたガラスエポキシ樹脂基板を用いるのが好ましい。
(First embodiment)
FIG. 1 shows a cross section of a crosstalk suppressing circuit board 2 according to the first embodiment.
As shown in FIG. 1, the crosstalk suppressing circuit board 2 according to the present invention includes an insulating substrate 4 as a base material. The insulating substrate 4 is not particularly limited as long as it is an insulating resin, but a glass epoxy resin substrate in which an epoxy resin is impregnated with glass fiber as a reinforcing material is preferably used.

この絶縁基板4の一方の面(下端面6)には、グランド層8が形成されている。このグランド層8は、銅箔からなり、その厚さは、例えば12〜105μmである。
そして、この絶縁基板4のグランド層8が形成された面とは反対側の面(外側面10)には、信号線16及びこの信号線16を埋設する保護絶縁層18を含む配線回路12が設けられている。以下、この配線回路12につき詳しく説明する。
A ground layer 8 is formed on one surface (lower end surface 6) of the insulating substrate 4. The ground layer 8 is made of copper foil and has a thickness of 12 to 105 μm, for example.
A wiring circuit 12 including a signal line 16 and a protective insulating layer 18 in which the signal line 16 is embedded is formed on the surface (outer surface 10) opposite to the surface on which the ground layer 8 is formed of the insulating substrate 4. Is provided. Hereinafter, the wiring circuit 12 will be described in detail.

まず、絶縁基板4の外側面10には、所定のパターンにて形成された複数の信号線16が配設されている。この信号線16は、図1から明らかなように、断面矩形状をなしており、その下面20が絶縁基板4の外側面10に密着している。そして、信号線16の両側面22及び上面24は、磁性体からなる被覆材14で覆われている。   First, a plurality of signal lines 16 formed in a predetermined pattern are disposed on the outer surface 10 of the insulating substrate 4. As is clear from FIG. 1, the signal line 16 has a rectangular cross section, and its lower surface 20 is in close contact with the outer surface 10 of the insulating substrate 4. The both side surfaces 22 and the upper surface 24 of the signal line 16 are covered with a covering material 14 made of a magnetic material.

ここで、被覆材14は、信号線16の周囲に所定厚さで密着している。このように、信号線16の周囲に密着した磁性体からなる被覆材は、磁路を形成する。よって、磁界の流れ、即ち、磁束は、図1中の矢印mで示すように、被覆材14内を通ることになる。このため、信号線16に信号が通ることに起因して生じる磁界は、被覆材14内を流れるので、漏れが抑えられる。その結果、シールド効果が発揮され、信号線間のクロストークは抑制される。本発明においては、磁性体からなる被覆材14が信号線16に密着しているので、隣接する信号線16同士の間隔を狭めることができ、配線パターンの高密度化を阻害しない。   Here, the covering material 14 is in close contact with the periphery of the signal line 16 with a predetermined thickness. As described above, the covering material made of a magnetic material closely attached to the periphery of the signal line 16 forms a magnetic path. Therefore, the flow of the magnetic field, that is, the magnetic flux passes through the covering material 14 as indicated by the arrow m in FIG. For this reason, since the magnetic field generated due to the signal passing through the signal line 16 flows in the covering material 14, leakage is suppressed. As a result, a shielding effect is exhibited and crosstalk between signal lines is suppressed. In the present invention, since the covering material 14 made of a magnetic material is in close contact with the signal line 16, the interval between the adjacent signal lines 16 can be narrowed, and the density of the wiring pattern is not hindered.

この被覆材14としては、Ni−Pめっきにより形成することが好ましい。
ここで、Ni−Pめっきは、Pの含有量が0重量%〜15重量%の範囲にあると、クロストークの抑制効果が発揮され好ましい。より好ましいPの含有量は、2重量%〜10重量%である。
また、Ni−Pめっきの厚さは、1μm〜10μmの範囲にあると、クロストークの抑制効果が発揮され好ましい。より好ましいNi−Pめっきの厚さは、2μm〜6μmである。
The covering material 14 is preferably formed by Ni-P plating.
Here, it is preferable that the Ni-P plating has a P content in the range of 0 wt% to 15 wt% because the effect of suppressing crosstalk is exhibited. A more preferable content of P is 2 to 10% by weight.
Moreover, when the thickness of the Ni—P plating is in the range of 1 μm to 10 μm, it is preferable because the effect of suppressing crosstalk is exhibited. A more preferable thickness of the Ni—P plating is 2 μm to 6 μm.

以上のように被覆材14を有する信号線16は、ソルダレジスト等の保護絶縁層18で保護されることが好ましい。この保護絶縁層18は、エポキシ樹脂等の絶縁性の樹脂よりなり、絶縁基板4の外側面10において信号線16を完全に覆う所定厚さで形成されている。   As described above, the signal line 16 having the covering material 14 is preferably protected by the protective insulating layer 18 such as a solder resist. The protective insulating layer 18 is made of an insulating resin such as an epoxy resin and is formed with a predetermined thickness so as to completely cover the signal line 16 on the outer surface 10 of the insulating substrate 4.

次に、本発明のクロストーク抑制回路基板2(4層基板)の製造方法について説明する。
まず、ガラスエポキシ樹脂基板からなる絶縁基板9に銅箔が貼着された両面板(コア材)7を準備する。ここで、両面板は、両面に銅箔が既に形成されているので、この銅箔をグランド層8として利用できるので好ましい。
その後、両面板7の両面に対し、プリプレグ(絶縁基板4)と銅箔とを通常の積層プレス条件で積層して、4層基板を作成する。最外面の両面を従来の方法、例えば、サブトラクティブ法等により銅からなる信号線16を所定パターンで形成する。
Next, a method for manufacturing the crosstalk suppressing circuit board 2 (four-layer board) of the present invention will be described.
First, a double-sided plate (core material) 7 in which a copper foil is bonded to an insulating substrate 9 made of a glass epoxy resin substrate is prepared. Here, the double-sided plate is preferable because copper foil is already formed on both sides, and this copper foil can be used as the ground layer 8.
Thereafter, a prepreg (insulating substrate 4) and a copper foil are laminated on both surfaces of the double-sided plate 7 under normal lamination press conditions to form a four-layer substrate. The signal lines 16 made of copper are formed in a predetermined pattern on both outermost surfaces by a conventional method such as a subtractive method.

次に、所定パターンの信号線16が形成された絶縁基板4に対して、信号線16以外の部分にめっきレジストを形成し、めっきレジストのない信号線16の外表面に対しNi−Pめっきを施す。詳しくは、以下のようにして信号線16の外表面をNi−Pめっきで覆う。
Ni−Pめっきは、ジアリン酸塩を還元剤として用いた無電解ニッケルめっきを実施することにより行い、信号線16の外表面をNi−Pめっきで覆う。
Next, a plating resist is formed on portions other than the signal lines 16 on the insulating substrate 4 on which the signal lines 16 having a predetermined pattern are formed, and Ni-P plating is applied to the outer surface of the signal lines 16 without the plating resist. Apply. Specifically, the outer surface of the signal line 16 is covered with Ni—P plating as follows.
Ni-P plating is performed by performing electroless nickel plating using diaphosphate as a reducing agent, and the outer surface of the signal line 16 is covered with Ni-P plating.

次に、外表面をNi−Pめっきで覆われた信号線16の所定のパターンを備えた絶縁基板4の外側面10に対し、信号線16のパターンの全体を覆うように保護絶縁層18を形成する。この保護絶縁層18は、一般的なソルダレジストを形成する工法で行えばよい。例えば、以下のようにして形成される。   Next, a protective insulating layer 18 is formed on the outer surface 10 of the insulating substrate 4 having a predetermined pattern of the signal line 16 whose outer surface is covered with Ni-P plating so as to cover the entire pattern of the signal line 16. Form. The protective insulating layer 18 may be formed by a general method for forming a solder resist. For example, it is formed as follows.

まず、絶縁性樹脂インクを準備する。この絶縁性樹脂インクは、エポキシ樹脂及び溶剤からなり、所定の粘度に調整されている。そして、この絶縁性樹脂インクは絶縁基板4の外側面10側に塗布され、絶縁樹脂インク層が形成される。このとき、絶縁樹脂インクは、信号線16のパターンの間隙に充填されるとともに、信号線16を完全に覆うように所定厚さで塗布される。次いで、絶縁基板4全体を、加熱することにより絶縁樹脂インク中の溶剤を蒸発させるとともに絶縁樹脂インクを硬化させる。これにより、絶縁樹脂インク層を保護絶縁層18とする。
以上のようにして、第1の実施形態のクロストーク抑制回路基板2(4層基板)が製造される。
First, an insulating resin ink is prepared. This insulating resin ink is made of an epoxy resin and a solvent, and is adjusted to a predetermined viscosity. And this insulating resin ink is apply | coated to the outer surface 10 side of the insulating substrate 4, and an insulating resin ink layer is formed. At this time, the insulating resin ink is filled in a gap between the patterns of the signal lines 16 and is applied with a predetermined thickness so as to completely cover the signal lines 16. Next, the entire insulating substrate 4 is heated to evaporate the solvent in the insulating resin ink and cure the insulating resin ink. Thus, the insulating resin ink layer is used as the protective insulating layer 18.
As described above, the crosstalk suppression circuit board 2 (four-layer board) of the first embodiment is manufactured.

(第2の実施形態)
図2は、第2の実施形態のクロストーク抑制回路基板32(6層基板)を示す。このクロストーク抑制回路基板32は、2つの配線回路12(34,36)が積層された2層構造の積層回路33を備えている構成に変更された点のみで第1の実施形態と相違する。この第2の実施形態について説明するにあたり既に説明した構成部材及び部位と同一の機能を発揮するものについては同一の参照符号を付し、その説明を省略する。
(Second Embodiment)
FIG. 2 shows a crosstalk suppression circuit board 32 (six-layer board) of the second embodiment. The crosstalk suppressing circuit board 32 is different from the first embodiment only in that the crosstalk suppressing circuit board 32 is changed to a configuration including a laminated circuit 33 having a two-layer structure in which two wiring circuits 12 (34, 36) are laminated. . In the description of the second embodiment, the same reference numerals are given to those that exhibit the same functions as those of the components and parts already described, and the description thereof is omitted.

第2の実施形態のクロストーク抑制回路基板32は、下部配線回路34と上部配線回路36とからなる積層回路33を備えている。この積層回路33は、第1の実施形態における配線回路12(図1参照)を絶縁基板4上に上下両面に繰り返し形成したものである。   The crosstalk suppression circuit board 32 according to the second embodiment includes a laminated circuit 33 including a lower wiring circuit 34 and an upper wiring circuit 36. This laminated circuit 33 is obtained by repeatedly forming the wiring circuit 12 (see FIG. 1) in the first embodiment on the upper and lower surfaces on the insulating substrate 4.

この第2の実施形態のクロストーク抑制回路基板32によれば、図2中の矢印nで示すように、上部配線回路36内の信号線16aの周りの磁束は、この信号線16aに被覆された被膜材14内及び、この信号線16aの内側に位置付けられた下部配線回路34内の信号線16bに被覆された被覆材14の一部を通る。このため、信号線16a、16b間におけるクロストークも有効に抑制することができる。
なお、本発明は、第2の実施形態のような2層構造の積層回路を備えたクロストーク抑制回路基板に限定されるものではなく、更に多くの配線回路が積層された多層構造の積層回路を備えていてもよい。
According to the crosstalk suppression circuit board 32 of the second embodiment, as indicated by the arrow n in FIG. 2, the magnetic flux around the signal line 16a in the upper wiring circuit 36 is covered by the signal line 16a. The coating material 14 passes through a part of the coating material 14 covered with the signal line 16b in the lower wiring circuit 34 positioned inside the signal line 16a. For this reason, crosstalk between the signal lines 16a and 16b can also be effectively suppressed.
Note that the present invention is not limited to the crosstalk suppression circuit board having the multilayer circuit having the two-layer structure as in the second embodiment, and a multilayer circuit having a multilayer structure in which more wiring circuits are stacked. May be provided.

(実施例1)
クロストークを測定するための評価用基板40を以下のようにして作製した。なお、以下で記載している具体的な数値は一例である。
まず、図3に示すように、内層にグランド層48が形成された4層基板42の両面に互いに平行に延びる2本の信号線44をそれぞれ形成する。この4層基板42は、絶縁層厚400μmのプリプレグ(絶縁基板9)の両面に例えば厚さh2が35μmの銅箔(グランド層48)を貼着して形成された両面板(コア材)7を形成し、この両面板7の両面に、厚さh1が100μmのガラスエポキシ樹脂(絶縁基板46)と12μmの銅箔を重ねて積層プレスで積層して作製される。さらに無電解銅めっき、電解銅めっきを行い、厚さが30μmとなった段階でサブトラクティブ工法で回路形成を行い、上述した2本の信号線44を形成した。例えば、この信号線44の厚みH1は30μmとした。この信号線44は、例えば長さLが25cm、幅Wが130μm、厚さH1が30μmに設定され、2本の信号線間の間隔Gは、50μmに設定されている。
Example 1
An evaluation substrate 40 for measuring crosstalk was produced as follows. In addition, the specific numerical value described below is an example.
First, as shown in FIG. 3, two signal lines 44 extending in parallel with each other are formed on both surfaces of a four-layer substrate 42 having a ground layer 48 formed on the inner layer. The four-layer board 42 is a double-sided board (core material) 7 formed by sticking, for example, a copper foil (ground layer 48) having a thickness h2 of 35 μm on both sides of a prepreg (insulating board 9) having an insulating layer thickness of 400 μm. The glass epoxy resin (insulating substrate 46) having a thickness h1 of 100 μm and a copper foil of 12 μm are stacked on both sides of the double-sided plate 7 and laminated by a laminating press. Further, electroless copper plating and electrolytic copper plating were performed, and when the thickness reached 30 μm, a circuit was formed by a subtractive method, and the two signal lines 44 described above were formed. For example, the thickness H1 of the signal line 44 is 30 μm. For example, the signal line 44 has a length L of 25 cm, a width W of 130 μm, and a thickness H1 of 30 μm, and an interval G between the two signal lines is set to 50 μm.

次に、図4に示すように、信号線44の外表面に対し、Ni−Pめっき54を施した。このときの、Ni−Pめっきの条件は、以下の通りである。   Next, as shown in FIG. 4, Ni—P plating 54 was applied to the outer surface of the signal line 44. The conditions for Ni-P plating at this time are as follows.

Ni−Pめっきは、ジアリン酸塩を還元剤として用いた無電解ニッケルめっきを実施することにより行い、信号線16の外表面をNi−Pめっきで覆う。   Ni-P plating is performed by performing electroless nickel plating using diaphosphate as a reducing agent, and the outer surface of the signal line 16 is covered with Ni-P plating.

ここで、Ni−Pめっき中のPの含有量は2重量%、めっきの厚さH2は例えば6μmとなるように設定した。なお、信号線44の長手方向の両端部は、Ni−Pめっきは施さず信号線44を露出させてある。
次に、矩形状基板52の両面50にエポキシ樹脂と溶剤からなる絶縁性樹脂インクを塗布し、Ni−Pめっきが施された信号線44の全体が覆われるように絶縁性樹脂インク層を形成した。その後、150℃で1時間加熱することにより絶縁樹脂インク中の溶剤を蒸発させるとともに絶縁樹脂インクを硬化させ、絶縁樹脂インク層を保護絶縁層56とした。なお、保護絶縁層56は、図4中、二点鎖線で示した。
Here, the content of P in the Ni—P plating was set to 2% by weight, and the plating thickness H2 was set to 6 μm, for example. Note that both end portions of the signal line 44 in the longitudinal direction are not subjected to Ni-P plating, and the signal line 44 is exposed.
Next, an insulating resin ink made of an epoxy resin and a solvent is applied to both surfaces 50 of the rectangular substrate 52, and an insulating resin ink layer is formed so as to cover the entire signal line 44 subjected to Ni-P plating. did. Thereafter, the solvent in the insulating resin ink was evaporated by heating at 150 ° C. for 1 hour, the insulating resin ink was cured, and the insulating resin ink layer was used as the protective insulating layer 56. The protective insulating layer 56 is indicated by a two-dot chain line in FIG.

このようにして得られた評価用基板40に対し、遠端クロストーク(S41)の周波数特性を測定した。ここで、遠端クロストークとは、平行して配設された信号線に同一方向の信号を伝える場合に、一方の信号線を伝わる信号が、他方の信号線を伝わる信号と結合することをいう。この遠端クロストークの量は、具体的には、評価用基板40の一方の信号線44aを主線路、他方の信号線44bを副線路とし、これら主線路−副線路間につき4ポート高周波ネットワークアナライザ(アドバンテスト社製R3767CG OPT14)を用いることにより測定した。この結果を主線路−副線路間の遠端クロストーク(S41)の周波数特性として、図5及び図6中に実線aで示した。ここで、図5及び図6において、縦軸は、遠端クロストーク(S41)量[dB]を示し、横軸は、周波数f[GHz]を示している。 The frequency characteristics of far end crosstalk (S 41 ) were measured for the evaluation substrate 40 thus obtained. Here, far-end crosstalk means that when a signal in the same direction is transmitted to signal lines arranged in parallel, a signal transmitted through one signal line is combined with a signal transmitted through the other signal line. Say. Specifically, the amount of the far-end crosstalk is determined by using one signal line 44a of the evaluation substrate 40 as a main line and the other signal line 44b as a sub line, and a four-port high-frequency network between the main line and the sub line. The measurement was performed by using an analyzer (R3767CG OPT14 manufactured by Advantest). This result is shown by a solid line a in FIGS. 5 and 6 as a frequency characteristic of the far-end crosstalk (S 41 ) between the main line and the sub line. Here, in FIGS. 5 and 6, the vertical axis represents the far-end crosstalk (S 41 ) amount [dB], and the horizontal axis represents the frequency f [GHz].

(実施例2)
Ni−Pめっき中のPの含有量を7重量%としたことを除き、実施例1と同様にして評価用基板を作製した。
実施例2の評価用基板に対して実施例1と同様に遠端クロストーク(S41)の周波数特性の測定を行い、その結果を図5中に一点鎖線bで示した。
(Example 2)
A substrate for evaluation was produced in the same manner as in Example 1 except that the content of P in the Ni—P plating was 7% by weight.
The frequency characteristics of the far-end crosstalk (S 41 ) were measured on the evaluation substrate of Example 2 in the same manner as in Example 1, and the result is shown by a one-dot chain line b in FIG.

(実施例3)
Ni−Pめっき中のPの含有量を10重量%としたことを除き、実施例1と同様にして評価用基板を作製した。
実施例3の評価用基板に対して実施例1と同様に遠端クロストーク(S41)の周波数特性の測定を行い、その結果を図5中に二点鎖線cで示した。
(Example 3)
An evaluation substrate was produced in the same manner as in Example 1 except that the content of P in the Ni-P plating was 10% by weight.
The frequency characteristic of far end crosstalk (S 41 ) was measured for the evaluation substrate of Example 3 in the same manner as in Example 1, and the result is shown by a two-dot chain line c in FIG.

(実施例4)
Ni−Pめっきの厚さH2を4μmとしたことを除き、実施例1と同様にして評価用基板を作製した。
実施例4の評価用基板に対して実施例1と同様に遠端クロストーク(S41)の周波数特性の測定を行い、その結果を図6中に一点鎖線dで示した。
Example 4
A substrate for evaluation was produced in the same manner as in Example 1 except that the thickness H2 of the Ni—P plating was 4 μm.
The frequency characteristics of the far-end crosstalk (S 41 ) were measured on the evaluation substrate of Example 4 in the same manner as in Example 1, and the result is shown by a one-dot chain line d in FIG.

(実施例5)
Ni−Pめっきの厚さH2を2μmとしたことを除き、実施例1と同様にして評価用基板を作製した。
実施例5の評価用基板に対して実施例1と同様に遠端クロストーク(S41)の周波数特性の測定を行い、その結果を図6中に二点鎖線eで示した。
(Example 5)
An evaluation substrate was produced in the same manner as in Example 1 except that the thickness H2 of the Ni—P plating was 2 μm.
The frequency characteristics of the far-end crosstalk (S 41 ) were measured on the evaluation substrate of Example 5 in the same manner as in Example 1, and the result is shown by a two-dot chain line e in FIG.

(比較例1)
Ni−Pめっき施さなかったことを除き、実施例1と同様にして評価用基板を作製した。
比較例1の評価用基板に対して実施例1と同様に遠端クロストーク(S41)の周波数特性の測定を行い、その結果を図5及び6中に点線gで示した。
(Comparative Example 1)
An evaluation substrate was produced in the same manner as in Example 1 except that Ni-P plating was not applied.
The frequency characteristic of the far-end crosstalk (S 41 ) was measured for the evaluation substrate of Comparative Example 1 in the same manner as in Example 1, and the result is shown by the dotted line g in FIGS.

図5、6からは以下のことが明らかである。
まず、図5に示すように、Ni−Pめっきを施していない比較例1に比べ、Ni−Pめっきを施した実施例1、2、3の遠端クロストークの量は低下しており、Ni−Pめっきを施すことにより遠端クロストークが抑制されていることがわかる。ここで、Pの含有量が2重量%の実施例1の遠端クロストーク量が最も少なく、Ni−Pめっきを施していない比較例1の遠端クロストーク量が最も多かった。1GHz付近の実施例1と比較例1とのクロストーク量の差は10dB程度であることから、Ni−Pめっきを施さないときに比べ、Pの含有量が2重量%のNi−Pめっきを施したときの1GHz付近における遠端クロストークの抑制量は10dBであることがわかる。
The following is clear from FIGS.
First, as shown in FIG. 5, the amount of far-end crosstalk in Examples 1, 2, and 3 subjected to Ni-P plating is lower than that in Comparative Example 1 where Ni-P plating is not performed. It can be seen that far-end crosstalk is suppressed by applying Ni-P plating. Here, the far-end crosstalk amount of Example 1 having a P content of 2% by weight was the smallest, and the far-end crosstalk amount of Comparative Example 1 without Ni-P plating was the largest. Since the difference in the amount of crosstalk between Example 1 and Comparative Example 1 near 1 GHz is about 10 dB, Ni-P plating with a P content of 2% by weight is compared with the case where Ni-P plating is not applied. It can be seen that the far-end crosstalk suppression amount in the vicinity of 1 GHz when applied is 10 dB.

次に、図6からは、Ni−Pめっきを施さなかったとき(比較例1)の遠端クロストーク量が一番多く、Ni−Pめっきの厚さが2μm、4μm、6μm(実施例5、4,1)と厚くなるほど遠端クロストーク量が減っていくことがわかる。Ni−Pめっきの厚さが6μmの実施例1とNi−Pめっきを施していない比較例1との1GHz付近のクロストーク量の差は10dB程度であることから、Ni−Pめっきの厚さを6μmとしたときの1GHz付近における遠端クロストークの抑制量は10dBであることがわかる。   Next, FIG. 6 shows that the amount of far-end crosstalk when the Ni-P plating is not performed (Comparative Example 1) is the largest, and the thickness of the Ni-P plating is 2 μm, 4 μm, and 6 μm (Example 5). 4 and 1), the far-end crosstalk amount decreases as the thickness increases. Since the difference in crosstalk amount around 1 GHz between Example 1 where the thickness of Ni-P plating is 6 μm and Comparative Example 1 where Ni-P plating is not applied is about 10 dB, the thickness of Ni-P plating It can be seen that the far-end crosstalk suppression amount in the vicinity of 1 GHz when 10 μm is 10 μm is 10 dB.

2 クロストーク抑制回路基板
4 絶縁基板
6 下端面
8 グランド層
10 外側面
12 配線回路
14 被覆材
16 信号線
18 保護絶縁層
20 下面
22 側面
24 上面
26 上面
33 積層回路
2 Crosstalk suppression circuit board 4 Insulating board 6 Lower end face 8 Ground layer 10 Outer side face 12 Wiring circuit 14 Coating material 16 Signal line 18 Protective insulating layer 20 Lower face 22 Side face 24 Upper face 26 Upper face 33 Multilayer circuit

Claims (5)

樹脂製の絶縁基板と、
前記絶縁基板の一方の面に設けられたグランド層と、
前記絶縁基板の前記グランド層とは反対側の面に設けられた配線回路と
を備え、
前記配線回路は、
所定のパターンにて形成された信号線と、
前記信号線の外表面を覆う磁性体からなる被覆材と、
前記信号線及び前記被覆材を埋設する樹脂製の保護絶縁層と
を含むことを特徴とするクロストーク抑制回路基板。
A resin insulating substrate;
A ground layer provided on one surface of the insulating substrate;
A wiring circuit provided on a surface opposite to the ground layer of the insulating substrate,
The wiring circuit is
A signal line formed in a predetermined pattern;
A coating material made of a magnetic material covering the outer surface of the signal line;
A crosstalk suppressing circuit board comprising: a protective insulating layer made of a resin in which the signal line and the covering material are embedded.
前記配線回路が複数積層された多層構造の積層回路を備えたことを特徴とする請求項1に記載のクロストーク抑制回路基板。   The crosstalk suppression circuit board according to claim 1, further comprising a multilayer circuit having a multilayer structure in which a plurality of the wiring circuits are stacked. 前記被覆材は、Ni−Pめっきであることを特徴とする請求項1又は2に記載のクロストーク抑制回路基板。   The crosstalk suppressing circuit board according to claim 1, wherein the covering material is Ni—P plating. 前記Ni−Pめっき中のPの含有量が0重量%〜15重量%であることを特徴とする請求項3に記載のクロストーク抑制回路基板。   4. The crosstalk suppressing circuit board according to claim 3, wherein the content of P in the Ni—P plating is 0 wt% to 15 wt%. 前記Ni−Pめっきは、厚さが1μm〜10μmであることを特徴とする請求項4に記載のクロストーク抑制回路基板。   The crosstalk suppression circuit board according to claim 4, wherein the Ni—P plating has a thickness of 1 μm to 10 μm.
JP2010161535A 2010-07-16 2010-07-16 Crosstalk suppression circuit board Expired - Fee Related JP5595153B2 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018107212A (en) * 2016-12-22 2018-07-05 京セラ株式会社 Printed-circuit board
CN114025465A (en) * 2021-09-27 2022-02-08 中国航空无线电电子研究所 PCB with isolation structure

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH077243A (en) * 1993-04-23 1995-01-10 Ibiden Co Ltd Bonding pad for printed wiring board and electroless gold plating method for conductor pattern
JP2008060263A (en) * 2006-08-30 2008-03-13 Nitto Denko Corp Wiring circuit board and its manufacturing method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH077243A (en) * 1993-04-23 1995-01-10 Ibiden Co Ltd Bonding pad for printed wiring board and electroless gold plating method for conductor pattern
JP2008060263A (en) * 2006-08-30 2008-03-13 Nitto Denko Corp Wiring circuit board and its manufacturing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018107212A (en) * 2016-12-22 2018-07-05 京セラ株式会社 Printed-circuit board
CN114025465A (en) * 2021-09-27 2022-02-08 中国航空无线电电子研究所 PCB with isolation structure

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